CL2017000648A1 - Combado de sensor de imagen por expansión de sustrato inducido - Google Patents

Combado de sensor de imagen por expansión de sustrato inducido

Info

Publication number
CL2017000648A1
CL2017000648A1 CL2017000648A CL2017000648A CL2017000648A1 CL 2017000648 A1 CL2017000648 A1 CL 2017000648A1 CL 2017000648 A CL2017000648 A CL 2017000648A CL 2017000648 A CL2017000648 A CL 2017000648A CL 2017000648 A1 CL2017000648 A1 CL 2017000648A1
Authority
CL
Chile
Prior art keywords
image sensor
chip
image
sensor feedback
sensor
Prior art date
Application number
CL2017000648A
Other languages
English (en)
Inventor
Geoffrey P Mcknight
John J Vajo
Jason A Graetz
Original Assignee
Microsoft Technology Licensing Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microsoft Technology Licensing Llc filed Critical Microsoft Technology Licensing Llc
Publication of CL2017000648A1 publication Critical patent/CL2017000648A1/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/028—Manufacture or treatment of image sensors covered by group H10F39/12 performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Studio Devices (AREA)
  • Facsimile Heads (AREA)

Abstract

<p>EN ALGUNOS EJEMPLOS, TÉCNICAS Y ARQUITECTURAS PARA LA FABRICACIÓN DE UN CHIP SENSOR DE IMAGEN QUE TIENE UNA SUPERFICIE CURVA INCLUYEN COLOCAR UN SUSTRATO EN UNA PRIMERA SUPERFICIE DE UN CHIP SENSOR DE IMAGEN, DONDE LA PRIMERA SUPERFICIE DEL CHIP SENSOR DE IMAGEN ESTA OPUESTA A UNA SEGUNDA SUPERFICIE DEL CHIP SENSOR DE IMAGEN, Y DONDE LA SEGUNDA SUPERFICIE DEL CHIP SENSOR DE IMAGEN INCLUYE SENSORES DE LUZ PARA GENERAR LAS SEÑALES ELÉCTRICAS EN RESPUESTA A LA RECEPCIÓN DE LUZ. LA FABRICACIÓN TAMBIÉN INCLUYE MODIFICAR UN VOLUMEN DEL SUSTRATO CON EL FIN DE IMPARTIR LAS FUERZAS EN EL CHIP SENSOR DE IMAGEN PARA PRODUCIR UN CHIP SENSOR DE IMAGEN CURVADO.</p>
CL2017000648A 2014-09-19 2017-03-16 Combado de sensor de imagen por expansión de sustrato inducido CL2017000648A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/491,903 US9570488B2 (en) 2014-09-19 2014-09-19 Image sensor bending by induced substrate swelling

Publications (1)

Publication Number Publication Date
CL2017000648A1 true CL2017000648A1 (es) 2017-11-17

Family

ID=54199296

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2017000648A CL2017000648A1 (es) 2014-09-19 2017-03-16 Combado de sensor de imagen por expansión de sustrato inducido

Country Status (16)

Country Link
US (2) US9570488B2 (es)
EP (1) EP3195360B1 (es)
JP (1) JP2017531319A (es)
KR (1) KR102444392B1 (es)
CN (1) CN107078142B (es)
AU (1) AU2015318206A1 (es)
BR (1) BR112017003628A2 (es)
CA (1) CA2961181A1 (es)
CL (1) CL2017000648A1 (es)
CO (1) CO2017002554A2 (es)
IL (1) IL250482A0 (es)
MX (1) MX2017003531A (es)
PH (1) PH12017500248A1 (es)
RU (1) RU2017108847A (es)
SG (1) SG11201701827YA (es)
WO (1) WO2016044040A1 (es)

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Also Published As

Publication number Publication date
US20160086987A1 (en) 2016-03-24
EP3195360A1 (en) 2017-07-26
SG11201701827YA (en) 2017-04-27
CO2017002554A2 (es) 2017-06-20
MX2017003531A (es) 2017-06-21
AU2015318206A1 (en) 2017-03-16
IL250482A0 (en) 2017-03-30
CA2961181A1 (en) 2016-03-24
KR20170056689A (ko) 2017-05-23
BR112017003628A2 (pt) 2017-12-12
PH12017500248A1 (en) 2017-07-03
US9570488B2 (en) 2017-02-14
CN107078142A (zh) 2017-08-18
RU2017108847A (ru) 2018-09-17
KR102444392B1 (ko) 2022-09-16
CN107078142B (zh) 2020-08-18
WO2016044040A1 (en) 2016-03-24
US9859314B2 (en) 2018-01-02
JP2017531319A (ja) 2017-10-19
US20170117311A1 (en) 2017-04-27
EP3195360B1 (en) 2019-05-01

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