CN100505309C - 一种便携式信息终端和一种摄象机 - Google Patents

一种便携式信息终端和一种摄象机 Download PDF

Info

Publication number
CN100505309C
CN100505309C CNB2006101014083A CN200610101408A CN100505309C CN 100505309 C CN100505309 C CN 100505309C CN B2006101014083 A CNB2006101014083 A CN B2006101014083A CN 200610101408 A CN200610101408 A CN 200610101408A CN 100505309 C CN100505309 C CN 100505309C
Authority
CN
China
Prior art keywords
thin film
region
circuit
channel formation
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006101014083A
Other languages
English (en)
Chinese (zh)
Other versions
CN1921149A (zh
Inventor
山崎舜平
大谷久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN1921149A publication Critical patent/CN1921149A/zh
Application granted granted Critical
Publication of CN100505309C publication Critical patent/CN100505309C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
CNB2006101014083A 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机 Expired - Fee Related CN100505309C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2207797A JP3753827B2 (ja) 1997-01-20 1997-01-20 半導体装置の作製方法
JP22077/1997 1997-01-20
JP123088/1997 1997-04-26

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100642546A Division CN100377363C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机

Publications (2)

Publication Number Publication Date
CN1921149A CN1921149A (zh) 2007-02-28
CN100505309C true CN100505309C (zh) 2009-06-24

Family

ID=12072834

Family Applications (3)

Application Number Title Priority Date Filing Date
CNB2006101014083A Expired - Fee Related CN100505309C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机
CNB2006101007978A Expired - Fee Related CN100470739C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机
CN200610101412XA Expired - Fee Related CN1877861B (zh) 1997-01-20 1998-01-20 半导体器件及其用途

Family Applications After (2)

Application Number Title Priority Date Filing Date
CNB2006101007978A Expired - Fee Related CN100470739C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机
CN200610101412XA Expired - Fee Related CN1877861B (zh) 1997-01-20 1998-01-20 半导体器件及其用途

Country Status (2)

Country Link
JP (1) JP3753827B2 (2)
CN (3) CN100505309C (2)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW386238B (en) 1997-01-20 2000-04-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3846057B2 (ja) * 1998-09-03 2006-11-15 セイコーエプソン株式会社 電気光学装置の駆動回路及び電気光学装置並びに電子機器
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7317438B2 (en) 1998-10-30 2008-01-08 Semiconductor Energy Laboratory Co., Ltd. Field sequential liquid crystal display device and driving method thereof, and head mounted display
JP4731655B2 (ja) * 1999-02-12 2011-07-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6506635B1 (en) 1999-02-12 2003-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of forming the same
US6680487B1 (en) * 1999-05-14 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
JP4627843B2 (ja) * 1999-07-22 2011-02-09 株式会社半導体エネルギー研究所 半導体装置
JP4823543B2 (ja) * 2004-03-26 2011-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102268217B1 (ko) 2010-03-05 2021-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN105576037B (zh) * 2016-01-08 2018-11-13 京东方科技集团股份有限公司 薄膜晶体管及其制作和测试方法、阵列基板和显示装置
US20190229173A1 (en) * 2018-01-23 2019-07-25 Int Tech Co., Ltd. Light emitting device and manufacturing method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4728617A (en) * 1986-11-04 1988-03-01 Intel Corporation Method of fabricating a MOSFET with graded source and drain regions
US5572211A (en) * 1994-01-18 1996-11-05 Vivid Semiconductor, Inc. Integrated circuit for driving liquid crystal display using multi-level D/A converter
US5539219A (en) * 1995-05-19 1996-07-23 Ois Optical Imaging Systems, Inc. Thin film transistor with reduced channel length for liquid crystal displays

Also Published As

Publication number Publication date
JP3753827B2 (ja) 2006-03-08
JPH10209465A (ja) 1998-08-07
CN1877861B (zh) 2010-05-12
CN1897233A (zh) 2007-01-17
CN1877861A (zh) 2006-12-13
CN100470739C (zh) 2009-03-18
CN1921149A (zh) 2007-02-28

Similar Documents

Publication Publication Date Title
US9389477B2 (en) Semiconductor device and method of manufacturing the same
US6307214B1 (en) Semiconductor thin film and semiconductor device
US6864127B2 (en) Semiconductor device and method of fabricating the same
KR100549353B1 (ko) 액티브 매트릭스 디스플레이 및 반도체 디바이스
KR100509529B1 (ko) 표시장치 및 반도체장치
JP4318768B2 (ja) 半導体装置の作製方法
US6452211B1 (en) Semiconductor thin film and semiconductor device
CN100505309C (zh) 一种便携式信息终端和一种摄象机
US6624051B1 (en) Semiconductor thin film and semiconductor device
JP2006237624A (ja) 半導体装置及びインバータ回路
JP4024341B2 (ja) 半導体装置の作製方法
JP3980117B2 (ja) 半導体装置の作製方法
JP4090533B2 (ja) 半導体装置の作製方法
JPH11354443A (ja) 半導体薄膜および半導体装置
JP4027449B2 (ja) 半導体薄膜及び半導体装置の作製方法
KR100560047B1 (ko) 반도체박막및반도체장치
JP2006203241A (ja) 半導体装置
JPH10214975A (ja) 半導体装置およびその作製方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090624

Termination date: 20150120

EXPY Termination of patent right or utility model