CN100559273C - 光刻装置和测量系统 - Google Patents

光刻装置和测量系统 Download PDF

Info

Publication number: CN100559273C
Authority: CN; China
Prior art keywords: projection; projection system; radiation; pupil; rays
Prior art date: 2002-09-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CNB031648614A

Other languages

English (en)

Chinese (zh)

Other versions

CN1497350A (zh

Inventor

H·范德拉安

J·J·M·巴瑟曼斯

A·J·J·范蒂塞多克

M·H·A·里德斯

J·H·J·穆尔斯

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

ASML Netherlands BV

Original Assignee

ASML Netherlands BV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-09-30

Filing date

2003-09-26

Publication date

2009-11-11

2003-09-26 Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV

2004-05-19 Publication of CN1497350A publication Critical patent/CN1497350A/zh

2009-11-11 Application granted granted Critical

2009-11-11 Publication of CN100559273C publication Critical patent/CN100559273C/zh

2023-09-26 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

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Images

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Testing Of Optical Devices Or Fibers (AREA)

CNB031648614A 2002-09-30 2003-09-26 光刻装置和测量系统 Expired - Fee Related CN100559273C (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
EP02256794		2002-09-30
EP02256794.5		2002-09-30

Publications (2)

Publication Number	Publication Date
CN1497350A CN1497350A (zh)	2004-05-19
CN100559273C true CN100559273C (zh)	2009-11-11

Family

ID=32479813

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CNB031648614A Expired - Fee Related CN100559273C (zh)	2002-09-30	2003-09-26	光刻装置和测量系统

Country Status (8)

Country	Link
US (1)	US6940587B2 (fr)
EP (1)	EP1403714B1 (fr)
JP (1)	JP3998627B2 (fr)
KR (1)	KR100565105B1 (fr)
CN (1)	CN100559273C (fr)
DE (1)	DE60332697D1 (fr)
SG (1)	SG134991A1 (fr)
TW (1)	TWI255970B (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20050275841A1 (en) *	2004-06-09	2005-12-15	Asml Netherlands B.V.	Alignment marker and lithographic apparatus and device manufacturing method using the same
US7528931B2 (en)	2004-12-20	2009-05-05	Asml Netherlands B.V.	Lithographic apparatus and device manufacturing method
US7834975B2 (en)	2004-12-27	2010-11-16	Asml Netherlands B.V.	Method and exposure apparatus for performing a tilted focus and a device manufactured accordingly
JP2006332586A (ja) *	2005-04-25	2006-12-07	Canon Inc	測定装置、露光装置及び方法、並びに、デバイス製造方法
JP2006339448A (ja) *	2005-06-02	2006-12-14	Canon Inc	受光ユニットを有する露光装置
US20070081138A1 (en) *	2005-10-11	2007-04-12	Asml Netherlands B.V.	Lithographic projection apparatus, device manufacturing methods and mask for use in a device manufacturing method
JP2007234685A (ja) *	2006-02-28	2007-09-13	Canon Inc	測定装置、当該測定装置を有する露光装置及びデバイス製造方法
US7580113B2 (en) *	2006-06-23	2009-08-25	Asml Netherlands B.V.	Method of reducing a wave front aberration, and computer program product
US20080259458A1 (en) *	2007-04-18	2008-10-23	Advanced Micro Devices, Inc.	EUV diffractive optical element for semiconductor wafer lithography and method for making same
US8692974B2 (en) *	2007-06-14	2014-04-08	Asml Netherlands B.V.	Lithographic apparatus and device manufacturing method using pupil filling by telecentricity control
US8189172B2 (en) *	2007-06-14	2012-05-29	Asml Netherlands B.V.	Lithographic apparatus and method
NL1036695A1 (nl) *	2008-05-15	2009-11-17	Asml Netherlands Bv	Lithographic apparatus.
DE102012204704A1 (de) *	2012-03-23	2013-09-26	Carl Zeiss Smt Gmbh	Messvorrichtung zum Vermessen einer Abbildungsgüte eines EUV-Objektives
DE102012207865B3 (de) *	2012-05-11	2013-07-11	Carl Zeiss Smt Gmbh	Optische Baugruppe für die EUV-Lithographie
US9335206B2 (en) *	2012-08-30	2016-05-10	Kla-Tencor Corporation	Wave front aberration metrology of optics of EUV mask inspection system
WO2017207512A2 (fr)	2016-06-03	2017-12-07	Asml Netherlands B.V.	Dispositif de formation de motifs
DE102014221313A1 (de)	2014-10-21	2016-04-21	Carl Zeiss Smt Gmbh	Beleuchtung für die EUV-Projektionslithografie
US10168621B2 (en) *	2014-11-24	2019-01-01	Asml Netherlands B.V.	Radiation beam apparatus
CN106324995B (zh) *	2015-05-12	2017-12-12	中国科学院上海光学精密机械研究所	光刻机原位快速高空间分辨率波像差检测装置及方法
CN106323981B (zh) *	2015-06-23	2017-11-14	南京理工大学	基于偏轴型位相波带片干涉显微检测装置
DE102016200847A1 (de) *	2016-01-21	2017-07-27	Dr. Johannes Heidenhain Gesellschaft Mit Beschränkter Haftung	Optische Positionsmesseinrichtung
DE102017200428B3 (de)	2017-01-12	2018-06-21	Carl Zeiss Smt Gmbh	Projektionsbelichtungsanlage sowie Verfahren zum Vermessen eines Abbildungsfehlers
DE102017203376B3 (de)	2017-03-02	2018-05-24	Carl Zeiss Smt Gmbh	Messvorrichtung und Verfahren zur Vermessung eines Wellenfrontfehlers eines abbildenden optischen Systems sowie Projektionsbelichtungsanlage für die Mikrolithographie
DE102018204626A1 (de)	2018-03-27	2019-04-04	Carl Zeiss Smt Gmbh	Beleuchtungsmaske sowie Verfahren zu deren Herstellung
EP4350440A1 (fr) *	2022-10-06	2024-04-10	ASML Netherlands B.V.	Procédés et système pour déterminer des aberrations d'un système de projection

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5296891A (en) *	1990-05-02	1994-03-22	Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V.	Illumination device
DE19824030A1 (de)	1998-05-29	1999-12-02	Zeiss Carl Fa	Katadioptrisches Projektionsobjektiv mit adaptivem Spiegel und Projektionsbelichtungsverfahren
US6118577A (en) *	1998-08-06	2000-09-12	Euv, L.L.C	Diffractive element in extreme-UV lithography condenser
TW550377B (en)	2000-02-23	2003-09-01	Zeiss Stiftung	Apparatus for wave-front detection
EP1231514A1 (fr)	2001-02-13	2002-08-14	Asm Lithography B.V.	Mesure des abérrations du front d' onde dans un appareil de projection lithographique

2003
- 2003-09-26 TW TW092126668A patent/TWI255970B/zh not_active IP Right Cessation
- 2003-09-26 EP EP03256068A patent/EP1403714B1/fr not_active Expired - Lifetime
- 2003-09-26 JP JP2003373442A patent/JP3998627B2/ja not_active Expired - Fee Related
- 2003-09-26 SG SG200305709-8A patent/SG134991A1/en unknown
- 2003-09-26 CN CNB031648614A patent/CN100559273C/zh not_active Expired - Fee Related
- 2003-09-26 US US10/670,801 patent/US6940587B2/en not_active Expired - Lifetime
- 2003-09-26 DE DE60332697T patent/DE60332697D1/de not_active Expired - Lifetime
- 2003-09-29 KR KR1020030067498A patent/KR100565105B1/ko not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP1403714A3 (fr)	2007-01-10
EP1403714B1 (fr)	2010-05-26
JP2004289116A (ja)	2004-10-14
EP1403714A2 (fr)	2004-03-31
SG134991A1 (en)	2007-09-28
TWI255970B (en)	2006-06-01
KR20040030322A (ko)	2004-04-09
KR100565105B1 (ko)	2006-03-30
DE60332697D1 (de)	2010-07-08
US6940587B2 (en)	2005-09-06
US20040114119A1 (en)	2004-06-17
TW200413861A (en)	2004-08-01
CN1497350A (zh)	2004-05-19
JP3998627B2 (ja)	2007-10-31

Legal Events

Date	Code	Title	Description
2004-05-19	C06	Publication
2004-05-19	PB01	Publication
2005-11-16	C10	Entry into substantive examination
2005-11-16	SE01	Entry into force of request for substantive examination
2009-11-11	C14	Grant of patent or utility model
2009-11-11	GR01	Patent grant
2021-09-03	CF01	Termination of patent right due to non-payment of annual fee	Granted publication date: 20091111 Termination date: 20200926
2021-09-03	CF01	Termination of patent right due to non-payment of annual fee

Publication	Publication Date	Title
CN100559273C (zh)	2009-11-11	光刻装置和测量系统
KR100583693B1 (ko)	2006-05-25	실질적으로 투과성인 공정층내에 정렬마크가 제공된 기판,상기 마크를 노광하는 마스크, 디바이스 제조방법 및 그디바이스
JP5571316B2 (ja)	2014-08-13	複数の位置調整装置を備えるリソグラフィ装置、及び位置調整測定方法
US7528966B2 (en)	2009-05-05	Position detection apparatus and exposure apparatus
US20060109463A1 (en)	2006-05-25	Latent overlay metrology
US20090097008A1 (en)	2009-04-16	Alignment Method and Apparatus, Lithographic Apparatus, Metrology Apparatus and Device Manufacturing Method
JP2008182249A (ja)	2008-08-07	リソグラフィ装置及びデバイスの製造方法並びに測定装置
JP2009290210A (ja)	2009-12-10	基板内の欠陥を判定する方法およびリソグラフィプロセスにおいて基板を露光するための装置
US7781237B2 (en)	2010-08-24	Alignment marker and lithographic apparatus and device manufacturing method using the same
KR100706934B1 (ko)	2007-04-11	Ｚ오프셋 및 비-수직 조명으로 인한 마스크 대물시프트의 ｙ에서의 위치보정
US7276710B2 (en)	2007-10-02	Light source unit and exposure apparatus having the same
JP3851780B2 (ja)	2006-11-29	リソグラフィ装置に使用するアッベ・アーム較正システム
KR100588116B1 (ko)	2006-06-09	리소그래피장치 및 빔크기와 발산을 결정하는 방법
KR20110049821A (ko)	2011-05-12	방사선 소스, 리소그래피 장치 및 디바이스 제조 방법
KR100606495B1 (ko)	2006-08-01	경사 감응성이 감소된 웨이퍼 정렬용 디바이스 및 방법
CN101639632B (zh)	2012-03-28	光刻投影装置
KR100549780B1 (ko)	2006-02-06	정렬 툴, 리소그래피장치, 정렬방법, 디바이스제조방법 및그 제조된 디바이스
KR100592822B1 (ko)	2006-06-23	리소그래피장치, 디바이스제조방법
EP1304597A1 (fr)	2003-04-23	Appareil lithographique et méthode de fabrication d'un dispositif
EP1420297A2 (fr)	2004-05-19	Appareil lithographique et procédé pour la détermination du grandeur et de la divergence du faisceau
JPH0436605A (ja)	1992-02-06	位置検出方法