CN101142012B - Mixed fluid homogenizer and mixed fluid supply facility - Google Patents
Mixed fluid homogenizer and mixed fluid supply facility Download PDFInfo
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- F16K3/02—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing with flat sealing faces; Packings therefor
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- B01F25/3133—Injector mixers in conduits or tubes through which the main component flows wherein additional components are introduced in the centre of the conduit characterised by the specific design of the injector
- B01F25/31331—Perforated, multi-opening, with a plurality of holes
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- B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
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- B01F25/452—Mixers in which the materials to be mixed are pressed together through orifices or interstitial spaces, e.g. between beads characterised by elements provided with orifices or interstitial spaces
- B01F25/4521—Mixers in which the materials to be mixed are pressed together through orifices or interstitial spaces, e.g. between beads characterised by elements provided with orifices or interstitial spaces the components being pressed through orifices in elements, e.g. flat plates or cylinders, which obstruct the whole diameter of the tube
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
- B01F25/40—Static mixers
- B01F25/45—Mixers in which the materials to be mixed are pressed together through orifices or interstitial spaces, e.g. between beads
- B01F25/452—Mixers in which the materials to be mixed are pressed together through orifices or interstitial spaces, e.g. between beads characterised by elements provided with orifices or interstitial spaces
- B01F25/4521—Mixers in which the materials to be mixed are pressed together through orifices or interstitial spaces, e.g. between beads characterised by elements provided with orifices or interstitial spaces the components being pressed through orifices in elements, e.g. flat plates or cylinders, which obstruct the whole diameter of the tube
- B01F25/45212—Mixers in which the materials to be mixed are pressed together through orifices or interstitial spaces, e.g. between beads characterised by elements provided with orifices or interstitial spaces the components being pressed through orifices in elements, e.g. flat plates or cylinders, which obstruct the whole diameter of the tube the elements comprising means for adjusting the orifices
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- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/71—Feed mechanisms
- B01F35/717—Feed mechanisms characterised by the means for feeding the components to the mixer
- B01F35/71805—Feed mechanisms characterised by the means for feeding the components to the mixer using valves, gates, orifices or openings
- B01F35/718051—Feed mechanisms characterised by the means for feeding the components to the mixer using valves, gates, orifices or openings being adjustable
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- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K3/00—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing
- F16K3/02—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing with flat sealing faces; Packings therefor
- F16K3/0218—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing with flat sealing faces; Packings therefor with only one sealing face
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K3/00—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing
- F16K3/30—Details
- F16K3/32—Means for additional adjustment of the rate of flow
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Abstract
Description
技术领域technical field
本发明涉及混合流体的均匀化装置和混合流体供给设备。更详细地说,涉及将多种流体混合的混合流体的混合程度进一步均匀化、以及具备这种混合流体均匀化装置的混合流体供给设备。The invention relates to a homogenizing device for a mixed fluid and a mixed fluid supply device. More specifically, it relates to a mixed fluid supply facility provided with such a mixed fluid homogenizing device for further uniformizing the degree of mixing of a mixed fluid obtained by mixing a plurality of fluids.
背景技术Background technique
在炼铁领域利用例如高炉法生产生铁的情况下,从高炉产生作为发热量比较少的(低发热量的)副产品气体的高炉瓦斯(Blast Furnace Gas;以下简称BFG)。这种BFG在炼铁厂内得到多方面使用。作为低发热量的副产品气体,不限于高炉瓦斯,还包含转炉瓦斯(LDG)和煤层瓦斯(Coal mane gas;简称CMG)等多种气体及其混合气体。另一方面,近年来正在研究高炉法以外的新炼铁工艺(例如FINEX和COREX等直接还原炼铁法),能够使用于对这样的新工艺发生的副产品气体进行有效利用的燃烧方式的开发研究有待进行。In the field of ironmaking, for example, when pig iron is produced by the blast furnace method, blast furnace gas (Blast Furnace Gas; hereinafter referred to as BFG) is generated from the blast furnace as a by-product gas with relatively low calorific value (low calorific value). Such BFGs are used in various ways in ironworks. As a by-product gas with low calorific value, it is not limited to blast furnace gas, but also includes various gases such as converter gas (LDG) and coal bed gas (Coal mane gas; CMG) and their mixed gases. On the other hand, in recent years, new ironmaking processes other than the blast furnace method (such as direct reduction ironmaking methods such as FINEX and COREX) have been researched, and research and development of combustion methods that can be used to effectively utilize by-product gases generated by such new processes pending.
任何炼铁工艺发生的副产品气体的特性(气体组成和发热量)都因设备和操作内容而不同,即使是同一设备,特性也会相应于各原料的特性和反应过程而时时刻刻发生变化,并不是一定的。将这种副产品气体作为例如燃气轮机那样的燃烧设备的燃料使用的情况下,必须混合减少发热量用气体使变动的发热量值不超过燃气轮机的允许发热量值上限,要避免燃气轮机燃烧器内的燃烧温度的急剧上升。反之则混合增大发热量用气体使其不低于允许发热量值的下限,要避免燃气轮机燃烧器内熄火。而且这样在主气体(例如BFG)中混合增加发热量用气体或减少发热量用气体(以下称为辅助气体)后的混合气体必须在燃料气体供给配管内的剖面上十分均匀分布。也就是说,有充分混合的必要。The characteristics (gas composition and calorific value) of the by-product gas generated in any ironmaking process are different depending on the equipment and operation content. Even if it is the same equipment, the characteristics will change from time to time according to the characteristics of each raw material and the reaction process. Not necessarily. When using this by-product gas as a fuel for combustion equipment such as a gas turbine, it is necessary to mix the gas for calorific value reduction so that the fluctuating calorific value does not exceed the upper limit of the allowable calorific value of the gas turbine, and to avoid combustion in the gas turbine combustor. A sharp rise in temperature. On the contrary, mix the gas for increasing the calorific value so that it is not lower than the lower limit of the allowable calorific value, and avoid flameout in the gas turbine combustor. In addition, the mixed gas obtained by mixing the calorific value increasing gas or the calorific reducing gas (hereinafter referred to as auxiliary gas) in the main gas (for example, BFG) must be uniformly distributed in the cross section of the fuel gas supply pipe. That is, it is necessary to mix thoroughly.
如果混合气体在配管内的剖面上不均匀,则不均匀的部分有可能原封不动地保持原来的状态到达燃气轮机的燃烧器,因此在燃烧室内设置的多台的各燃烧器中燃烧状态有可能不均匀。If the mixed gas is not uniform on the cross-section inside the piping, the uneven part may reach the burner of the gas turbine in its original state, so the combustion state may occur in each of the multiple burners installed in the combustion chamber. uneven.
而且,在不以增加发热量和减少发热量为目的,将性状不同的多种可燃气体一起作为燃料使用的情况下(例如在BFG中混合LDG、CMG),也有必要将这些气体充分混合。Furthermore, when multiple types of combustible gases with different properties are used together as fuel for the purpose of not increasing or decreasing the calorific value (for example, mixing LDG and CMG with BFG), it is also necessary to mix these gases well.
向来,为了均匀混合发热量等性能不同的气体,使用具备在例如流路中使气体旋转的静子叶片的混合器(参照例如专利文献1)。混合器的功能在于实现主气体以及能够作为辅助气体混合于主气体的不同的气体在发热量以及流量的全部范围内实现规定的混合。混合器是按照混合条件设计的,作为其条件,有(1)主气体的流量、气体比重、气体组成,(2)应该混合的气体比重、气体组成,(3)主气体与应该混合的气体的混合比的幅度。Conventionally, in order to uniformly mix gases having different properties such as calorific value, a mixer including stator vanes that rotate the gas in a flow path has been used (see, for example, Patent Document 1). The function of the mixer is to realize the predetermined mixing of the main gas and the different gases that can be mixed with the main gas as the auxiliary gas in the entire range of calorific value and flow rate. The mixer is designed according to the mixing conditions. As its conditions, there are (1) the flow rate, gas specific gravity and gas composition of the main gas, (2) the specific gravity and gas composition of the gas to be mixed, (3) the main gas and the gas to be mixed The magnitude of the mixing ratio.
已有的混合器,主气体与辅助气体的混合比例、即混合比,以主气体以及辅助气体的发热量值为基准预先决定,在当初预定的辅助气体改变为其他种类的增加发热量用气体的情况下,或是由于主气体的发热量值发生变化因此不得不大大改变主气体与辅助气体的混合比的情况下,要确保混合器的下游侧的燃料供给配管内的剖面上的混合的均匀性在一定的偏差内是极其困难的。In existing mixers, the mixing ratio of the main gas and the auxiliary gas, that is, the mixing ratio, is predetermined based on the calorific value of the main gas and the auxiliary gas, and the originally scheduled auxiliary gas is changed to another type of gas for increasing the calorific value. In the case where the calorific value of the main gas changes and the mixing ratio of the main gas and the auxiliary gas has to be greatly changed, it is necessary to ensure the mixing on the cross section of the fuel supply pipe on the downstream side of the mixer. Uniformity within a certain tolerance is extremely difficult.
例如使800kcal/Nm3的辅助气体增加发热量到1000kcal/Nm3的情况下,可以作为增加发热量用气体选择的炼焦炉气体(记为COG,发热量值约为4000kcal/Nm3)、转炉气体(记为LDG,发热量值约为2000kcal/Nm3)、天然气(记为NG,发热量值约为9000kcal/Nm3)中,各自与主气体(所述副产品气体)的混合比互不相同。例如,如果以主气体BFG的比例记为1,则辅助气体的混合比是,COG为0.05,LDG为0.1,或NG为0.022。因此作为增加发热量气体的COG的供给量减少时,作为代用使用LDG和NG的情况下,在主气体中的混合比大大不同于COG的情况,因此为COG专用而设计的已有的混合器不能够得到充分混合的效果,还有,如上所述将比较低发热量的LDG作为增加发热量用气体使用的情况,主要是主气体为BFG等那样的发热量更低的气体的情况。For example, if the auxiliary gas of 800kcal/Nm 3 increases the calorific value to 1000kcal/Nm 3 , coke oven gas (denoted as COG, calorific value of about 4000kcal/Nm 3 ), converter can be selected as the gas for increasing calorific value. In gas (referred to as LDG, calorific value is about 2000kcal/Nm 3 ), natural gas (represented as NG, calorific value is about 9000kcal/Nm 3 ), the mixing ratio of each with the main gas (the by-product gas) is different from each other. same. For example, if the ratio of the main gas BFG is expressed as 1, the mixing ratio of the auxiliary gas is 0.05 for COG, 0.1 for LDG, or 0.022 for NG. Therefore, when the supply of COG, which is a gas that increases the calorific value, is reduced, when LDG and NG are used as substitutes, the mixing ratio in the main gas is greatly different from that of COG, so the existing mixer designed exclusively for COG The effect of sufficient mixing cannot be obtained, and when LDG with a relatively low calorific value is used as the gas for increasing the calorific value as described above, it is mainly the case where the main gas is a gas with a lower calorific value such as BFG.
即使是主气体与辅助气体的混合比相同,由于主气体的流量改变,混合器内的流动图案发生变化,所以即使是混合的辅助气体是一种,混合后要确保在主气体的大幅度的流量变化范围内有规定的均匀性是困难的。Even if the mixing ratio of the main gas and the auxiliary gas is the same, the flow pattern in the mixer will change due to the change of the flow rate of the main gas, so even if the mixed auxiliary gas is one, after mixing, ensure that the main gas has a large range of It is difficult to have specified uniformity over the range of flow variation.
专利文献1:日本特开平10-337458号公报Patent Document 1: Japanese Patent Application Laid-Open No. 10-337458
发明内容Contents of the invention
本发明是为解决上述存在问题而作出的,其目的在于,提供适应包括不同的流量和组成的各种混合条件提高混合的均匀性,不管是否设置已有技术的混合器(与混合器无关),提高流体混合的均匀性用的混合流体均匀化装置以及具备该混合流体均匀化装置的混合流体供给设备。The present invention is made to solve the above-mentioned existing problems, and its purpose is to provide adaptation to various mixing conditions including different flow rates and compositions to improve the uniformity of mixing, regardless of whether a prior art mixer is provided (no relation to the mixer) , A mixed fluid homogenizing device for improving the uniformity of fluid mixing and a mixed fluid supply device equipped with the mixed fluid homogenizing device.
本发明的混合流体的均匀化装置,具备配设在流体流路内的相互重叠接合的,可相对位移的多片穿孔板,The homogenizing device for mixed fluid of the present invention is equipped with a plurality of perforated plates that are arranged in the fluid flow path and are overlapped and joined to each other and can be displaced relatively.
形成在各穿孔板上形成多个贯通孔,所述多片穿孔板在相互重叠的状态下在相互的面方向上相对位移,以此改变各穿孔板的贯通孔的重叠程度,改变全部贯通孔的开口率的结构。A plurality of through-holes are formed on each perforated plate, and the plurality of perforated plates are displaced relative to each other in a mutual surface direction in a state of overlapping each other, so as to change the overlapping degree of the through-holes of each perforated plate and change the thickness of all the through-holes. The structure of the aperture ratio.
采用这样的结构,在形成流体流动的阻力的穿孔板的上游侧,将用于调整主流体的性状的辅助流体混合于主流体中,在刚通过贯通孔时也进一步混合,混合得到促进。以此促进混合的均匀化。而且相应于混合条件,通过变化贯通孔的开口率能够选择该混合条件最合适的开口率。With such a structure, the auxiliary fluid for adjusting the properties of the main fluid is mixed with the main fluid upstream of the perforated plate that forms a resistance to fluid flow, and is further mixed immediately after passing through the through holes to promote mixing. This promotes homogenization of the mixing. Furthermore, by changing the aperture ratio of the through-holes according to the mixing conditions, it is possible to select the most suitable aperture ratio for the mixing conditions.
还可以形成如下所述的结构,即包含在所述流路的外部配设的,使穿孔板移动用的穿孔板移动装置,所述多片穿孔板有固定于流路内部的固定穿孔板和不加固定可移动的可动穿孔板,该可动穿孔板形成能够借助于所述穿孔板移动装置往复移动的结构。It is also possible to form a structure as follows, that is, include a perforated plate moving device arranged outside the flow path to move the perforated plate, and the multi-piece perforated plate has a fixed perforated plate and a fixed perforated plate fixed inside the flow path. A movable perforated plate that is movable without being fixed forms a structure capable of reciprocating movement by means of the perforated plate moving device.
如果这样构成,只要一方的穿孔板移动即可,而且固定穿孔板有助于可动穿孔板的导向。If constituted in this way, only one perforated plate needs to move, and the fixed perforated plate contributes to the guidance of the movable perforated plate.
最好是所述全部贯通孔的开口率为最大时的开口面积与流路的截面积相同或更大。因为能够使流路的阻力尽可能减小。Preferably, the opening area when the opening ratio of all the through holes is the maximum is equal to or greater than the cross-sectional area of the flow path. Because the resistance of the flow path can be reduced as much as possible.
可以将所述穿孔板偏离流路的中心轴的垂直方向倾斜配置。在这种情况下,穿孔板的实际面积增加,整个贯通孔形成的开口面积也增大,因此能够尽可能减小流路的阻力。The perforated plate may be arranged obliquely away from the vertical direction of the central axis of the flow path. In this case, the actual area of the perforated plate is increased, and the opening area formed by the entire through-hole is also increased, so that the resistance of the flow path can be reduced as much as possible.
所述固定穿孔板上安装移动导向构件,该移动导向构件形成与可动穿孔板的往复移动方向的垂直方向上的两侧部分配合,能够引导其移动的结构。A moving guide member is installed on the fixed perforated plate, and the movable guide member forms a structure that cooperates with the two side parts in the direction perpendicular to the reciprocating movement direction of the movable perforated plate, and can guide its movement.
可以形成如下所述的结构,即一片可动穿孔板配置于两片固定穿孔板之间,配设能够在该两片固定穿孔板之间保持可动穿孔板能够滑移的间隙的衬垫,该两片固定穿孔板和衬垫具有为可动穿孔板的移动导向的结构。The following structure can be formed, that is, a movable perforated plate is disposed between two fixed perforated plates, and a liner capable of maintaining a sliding gap between the two fixed perforated plates is arranged, The two fixed perforated plates and the liner have a structure that guides the movement of the movable perforated plate.
如果这样构成,可动穿孔板的移动利用其前后的固定穿孔板和例如两侧部的衬垫导向,因此能够减薄可动穿孔板的厚度,减小其重量,能够实现更迅速的操作。According to this configuration, the movement of the movable perforated plate is guided by the fixed perforated plates at the front and rear and the pads on both sides, for example, so the thickness and weight of the movable perforated plate can be reduced, enabling faster operation.
所述贯通孔形成为在可动穿孔板的移动方向的垂直方向上延伸的长孔形状。如果这样做,则能够使一片穿孔板上的贯通孔的面积比例比较大,因此能够使得贯通孔全开时的开口面积加大。The through hole is formed in a long hole shape extending in a direction perpendicular to a moving direction of the movable perforated plate. By doing so, the area ratio of the through-holes on one perforated plate can be relatively large, so that the opening area when the through-holes are fully opened can be increased.
最好是还包含在所述流路内配设的,清洗所述贯通孔用的清洗装置,该清洗装置具有喷出清洗用的液体的多个喷嘴。因为借助于这种结构,工作人员不需要进入流路内部,或大大减少进入其内部的频度,也能够清洗穿孔板。Preferably, a cleaning device for cleaning the through-hole is arranged in the flow path, and the cleaning device has a plurality of nozzles for ejecting a cleaning liquid. Because of this structure, the staff can clean the perforated plate without entering into the flow path, or greatly reducing the frequency of entering into the interior.
可以形成通过移动所述可动穿孔板关闭全部贯通孔的结构。A structure may be formed in which all the through holes are closed by moving the movable perforated plate.
本发明的另一种混合流体的均匀化装置,具备配设于流体流路内的形成多个贯通孔的穿孔板,该穿孔板形成能够围绕通过穿孔板面内的穿孔板的中心的假想直线转动到任意角度位置的的结构。Another device for homogenizing a mixed fluid according to the present invention is provided with a perforated plate arranged in a fluid flow path and formed with a plurality of through holes, and the perforated plate forms an imaginary straight line that can surround the center of the perforated plate passing through the plane of the perforated plate. The structure can be rotated to any angular position.
采用这样的结构,也能够进一步促进混合流体的混合。而且即使是在流路的下游侧流体流动被突然切断积极变化的压力变动向上游侧传播这样的事态发生,也能够使该可旋转的穿孔板向阻塞流路的方向旋转,以此增大流路的阻力,因此能够抑制上述压力变动向上游侧传播。With such a structure, the mixing of the mixed fluid can be further promoted. And even if the fluid flow on the downstream side of the flow path is suddenly cut off and the positively changing pressure fluctuation propagates to the upstream side, the rotatable perforated plate can be rotated to block the flow path to increase the flow rate. Because of the resistance of the road, it is possible to suppress the above-mentioned pressure fluctuation from propagating to the upstream side.
所述穿孔板形成能够在其面为沿着流路的中心轴的方向的全开位置与封闭流路的全闭位置之间转动的结构。还有,所谓封闭流路的全闭位置,是指假如在该穿孔板上未形成贯通孔,则流路内的流体流动将被切断的位置。实际上不是意味着流体流动被完全切断。The perforated plate is configured to be rotatable between a fully open position in which the surface is along a direction along the central axis of the flow path, and a fully closed position in which the flow path is closed. In addition, the fully closed position that closes the flow path means a position where the flow of fluid in the flow path will be blocked if no through hole is formed in the perforated plate. It does not actually mean that fluid flow is completely cut off.
本发明的混合流体供给设备,具备流体流动的流路、以及在该流路内配设的混合流体均匀化装置,该混合流体均匀化装置是上面所述中的任一项记载的混合流体的均匀化装置,所述流路上的配设混合流体均匀化装置的部分的截面积分别大于其上游侧的截面积和下游侧的截面积。The mixed fluid supply device of the present invention is provided with a fluid flow path and a mixed fluid homogenizing device arranged in the flow path, and the mixed fluid homogenizing device is the mixed fluid described in any one of the above. For the homogenizing device, the cross-sectional area of the part of the flow path where the mixed fluid homogenizing device is arranged is larger than the cross-sectional area of the upstream side and the downstream side of the cross-sectional area respectively.
如果采用这种混合流体供给设备,则穿孔板的实际面积增加,形成的贯通孔总体的开口面积也增大,因此能够尽可能减少流路的阻力。According to such a mixed fluid supply device, the actual area of the perforated plate increases, and the overall opening area of the formed through-holes also increases, so that the resistance of the flow path can be reduced as much as possible.
本发明的另一种混合流体供给设备,具备流体流动的流路、以及在该流路内配设的混合流体均匀化装置,该混合流体均匀化装置是上面所述中的任一项记载的混合流体的均匀化装置,所述流路上的配设混合流体均匀化装置的部分的下游侧的截面积大于其上游侧的截面积。Another mixed fluid supply device of the present invention is provided with a fluid flow path and a mixed fluid homogenization device arranged in the flow path, and the mixed fluid homogenization device is described in any one of the above-mentioned In the homogenizing device for mixed fluid, the cross-sectional area on the downstream side of the part of the flow path where the mixed fluid homogenizing device is arranged is larger than the cross-sectional area on the upstream side.
通过这样做,混合流体在通过均匀化装置后立即膨胀扩散,因此能够期望进一步提高混合效果。By doing so, the mixed fluid expands and spreads immediately after passing through the homogenizing device, so further improvement of the mixing effect can be expected.
本发明的另一种混合流体供给设备,具备流体流动的流路、以及在该流路内配设的混合流体均匀化装置,该混合流体的均匀化装置是上面所述中的任一项记载的混合流体的均匀化装置,还包含在所述流路的混合流体均匀化装置的下游侧配设的检测气体的性状的气体性状检测装置,形成该气体性状检测装置能够检测流路的断面上的气体成分的分布的结构。Another mixed fluid supply device of the present invention is provided with a fluid flow path and a mixed fluid homogenizing device arranged in the flow path, and the mixed fluid homogenizing device is described in any one of the above-mentioned The homogenization device for the mixed fluid further includes a gas property detection device for detecting the properties of the gas arranged on the downstream side of the mixed fluid homogenization device of the flow path, and the gas property detection device is formed to be able to detect the cross section of the flow path The structure of the distribution of gas components.
如果采用这种混合流体供给设备,则能够根据利用气体性状检测装置检测出的混合气体的混合状态,改变上述穿孔板的贯通孔的开口率,以此选择合适的开口率以提高混合的均匀化程度。作为气体性状检测装置,采用例如发热量计量装置等。If such a mixed fluid supply device is used, the aperture ratio of the through holes of the above-mentioned perforated plate can be changed according to the mixed state of the mixed gas detected by the gas property detection device, so as to select an appropriate aperture ratio to improve the uniformity of the mixture. degree. As the gas property detection device, for example, a calorific value measuring device or the like is used.
如果采用本发明,在广泛的混合条件中也能够提高混合的均匀性,即使是主流体和应该混合的辅助流体的流量和组成发生变化,也能够提高流体混合的均匀性。According to the present invention, the uniformity of mixing can be improved under a wide range of mixing conditions, and the uniformity of fluid mixing can be improved even if the flow rate and composition of the main fluid and the auxiliary fluid to be mixed change.
附图说明Description of drawings
图1是表示包含本发明一实施形态的混合流体均匀化装置的混合流体供给设备的大概情况的配管图。FIG. 1 is a piping diagram schematically showing a mixed fluid supply facility including a mixed fluid homogenizing device according to an embodiment of the present invention.
图2是表示图1的混合流体供给设备中的混合流体均匀化装置的一个实施形态的大概情况的纵剖面图。Fig. 2 is a longitudinal sectional view schematically showing an embodiment of a mixed fluid homogenizing device in the mixed fluid supply facility of Fig. 1 .
图3(a)是大概表示图1的混合流体供给设备中的混合流体均匀化装置的另一实施形态的大概情况的正面图,图3(b)是其部分剖面的侧面图。3( a ) is a front view schematically showing another embodiment of the mixed fluid homogenizing device in the mixed fluid supply facility of FIG. 1 , and FIG. 3( b ) is a side view in partial section thereof.
图4是表示图1的混合流体供给设备中的混合流体均匀化装置的又一个实施形态的立体图。Fig. 4 is a perspective view showing still another embodiment of the mixed fluid homogenizing device in the mixed fluid supply facility of Fig. 1 .
图5是图4的V-V线的剖面图。Fig. 5 is a cross-sectional view taken along line V-V in Fig. 4 .
图6是表示图1的混合流体供给设备中的混合流体均匀化装置的再一个实施形态的纵剖面图。Fig. 6 is a longitudinal sectional view showing still another embodiment of the mixed fluid homogenizing device in the mixed fluid supply facility of Fig. 1 .
图7(a)、(b)、(c)是分别表示图6的混合流体均匀化装置的穿孔板的一部分的剖面图。7( a ), ( b ), and ( c ) are cross-sectional views each showing a part of the perforated plate of the mixed fluid homogenizing device of FIG. 6 .
图8是图6的混合流体的均匀化装置的穿孔板的立体图。Fig. 8 is a perspective view of a perforated plate of the device for homogenizing mixed fluid in Fig. 6 .
图9是图8的IX-IX线剖面图。Fig. 9 is a sectional view taken along line IX-IX of Fig. 8 .
图10是表示图1的混合流体供给设备中的混合流体均匀化装置的再一个实施形态的纵剖面概略图。Fig. 10 is a schematic longitudinal sectional view showing still another embodiment of the mixed fluid homogenizing device in the mixed fluid supply facility of Fig. 1 .
图11是表示图10的混合流体均匀化装置的部分缺口的立体图。FIG. 11 is a perspective view showing a part of the mixed fluid homogenization device shown in FIG. 10 .
图12是表示图10的XII-XII线的剖面图。Fig. 12 is a cross-sectional view taken along line XII-XII in Fig. 10 .
图13是表示图1的混合流体供给设备中的混合流体均匀化装置的再一实施形态的纵剖面概略图。Fig. 13 is a schematic longitudinal sectional view showing still another embodiment of the mixed fluid homogenizing device in the mixed fluid supply facility of Fig. 1 .
图14是表示图1的混合流体供给设备中的混合流体均匀化装置的再一个实施形态的纵剖面概略图。Fig. 14 is a schematic longitudinal sectional view showing still another embodiment of the mixed fluid homogenizing device in the mixed fluid supply facility of Fig. 1 .
图15是表示图1的混合流体供给设备中的混合流体均匀化装置的再一个实施形态的纵剖面概略图。Fig. 15 is a schematic longitudinal sectional view showing still another embodiment of the mixed fluid homogenizing device in the mixed fluid supply facility of Fig. 1 .
图16是表示图15的混合流体均匀化装置的穿孔板的一个例子的立体图。Fig. 16 is a perspective view showing an example of a perforated plate of the mixed fluid homogenizing device shown in Fig. 15 .
图17是表示图15的混合流体均匀化装置的穿孔板的另一个例子的立体图。Fig. 17 is a perspective view showing another example of the perforated plate of the mixed fluid homogenizing device shown in Fig. 15 .
符号说明Symbol Description
1混合流体供给设备1 mixed fluid supply equipment
2主气体配管2 main gas piping
3辅助气体配管3 Auxiliary gas piping
4混合气体配管4 Mixed gas piping
5混合点5 mixing points
6(混合流体的)均匀化装置6 (mixed fluid) homogenization device
7均匀度检测装置7 Uniformity detection device
8固定穿孔板8 fixed perforated plate
9动穿孔板9 moving perforated plate
10贯通孔10 through holes
11驱动汽缸11 driving cylinder
12连结棒12 connecting rods
13密封机构13 sealing mechanism
14导向构件14 guide member
15衬垫15 pads
16(混合流体的)均匀化装置16 (mixed fluid) homogenization device
17清洗装置17 cleaning device
18清洗液供给配管18 Cleaning liquid supply piping
19喷嘴19 nozzles
20贯通孔20 through holes
21混合气体配管21 mixed gas piping
22旋转穿孔板22 rotating perforated plate
23配管23 Piping
24旋转穿孔板24 rotating perforated plates
25旋转轴25 axis of rotation
26(混合流体的)均匀化装置26 (mixed fluid) homogenization device
27法兰接头27 flange joints
28封闭衬套(plug)28 closed bushing (plug)
29开闭阀29 On-off valve
30控制装置30 control device
31油量调节装置31 oil quantity adjustment device
32位置检测器32 position detectors
33集液槽33 sump
34漏孔34 leaks
C燃烧装置C combustion device
S气体供给源S gas supply source
具体实施方式Detailed ways
下面参照附图对本发明的混合流体均匀化装置及具备该装置的混合流体供给设备的一实施形态进行说明。Next, an embodiment of a mixed fluid homogenizing device and a mixed fluid supply facility including the same according to the present invention will be described with reference to the drawings.
图1是本发明一实施形态的混合流体供给设备1。作为这样的供给设备,在将例如高炉或直接还原炼铁设备等气体供给源S发生的发热量有变动的副产品气体作为燃气轮机的燃料气体使用的情况下,有例如将性状不同的多种副产品气体混合后提供的燃料气体供给设备、或在这些燃料气体中将不活泼气体作为减少发热量用气体加以混合,或将COG作为增加发热量用气体加以混合后提供的燃料气体供给设备。上述气体供给源S经过包含将发生的气体作为燃料提供给所需要的例如除尘工序等处理工序。本发明的这种混合流体供给设备提供的流体不限于气体,也包含液体、粉末、浆液等,但是在以下说明的实施形态中只例示气体。Fig. 1 is a mixed fluid supply device 1 according to an embodiment of the present invention. As such a supply facility, when using, for example, a by-product gas with fluctuating calorific value generated by a gas supply source S such as a blast furnace or a direct reduction ironmaking facility, as a fuel gas for a gas turbine, there are, for example, various types of by-product gas with different properties. Fuel gas supply equipment supplied after mixing, or fuel gas supply equipment that mixes inert gas as a calorific value reducing gas, or COG as a calorific value increasing gas with these fuel gases. The above-mentioned gas supply source S passes through necessary processing steps including supplying generated gas as fuel, for example, a dust removal step. The fluid supplied by such a mixed fluid supply device of the present invention is not limited to gas, and includes liquid, powder, slurry, etc., but only gas is exemplified in the embodiments described below.
这种混合流体供给设备1具备:提供气体供给源S发生的主气体用的主气体配管2、连接于该主气体配管2的,将减少发热量用气体或增加发热量用气体添加于主气体中加以混合用的辅助气体配管3、配设于这两种配管2、3的连接点(以下也称为混合点)5的下游侧的,提供主气体与辅助气体的混合气体的混合气体配管4、以及配设于混合气体配管4内的混合流体均匀化装置(以下简称均匀化装置)6。上述辅助气体配管3是为使主气体的变动的性状(例如发热量变动)稳定而提供辅助气体的配管。This mixed fluid supply device 1 is provided with: a
利用均匀化装置6均匀混合的气体,在该气体是燃料气体的情况下被送往燃气轮机的燃烧设备等燃烧装置C。上述各配管2、3、4分别不限于圆形剖面的配管,也可以是椭圆形剖面的配管或多边形剖面的配管。上述辅助气体配管3,可以是两种以上的辅助气体在同一混合点5得到提供、混合的配管,也可以是将多支不同的辅助气体配管在不同的位置上与主气体配管2连接的配管。The gas uniformly mixed by the homogenizing
也可以如图所示,在混合气体配管4的均匀化装置6的下游侧设置检测流过内部的混合气体的混合均匀度用的均匀度检测装置7。As shown in the figure, a
图2表示上述均匀化装置6。均匀化装置6具备两片穿孔板8、9。各穿孔板8、9上形成多个贯通孔10。该贯通孔10的直径和配设间距没有限定,但是以相同的直径和相同的间距形成则下面所述的开口率调整比较容易进行,因此是比较理想的。一片穿孔板8具有扩展到混合气体配管4的整个流路的形状(假如没有贯通孔,则会将整个配关内的流路封堵住的形状),其外周固定于混合气体配管4的内表面上。该穿孔板8被称为固定穿孔板8。固定穿孔板8形成与混合气体配管4的流路的剖面形状相应的形状。另一穿孔板9连接着固定穿孔板8的上游侧的面配置,形成能够在其面方向上往复运动的结构。该穿孔板9被称为可动穿孔板9。FIG. 2 shows the
可动穿孔板9的端部上连接配设于混合气体配管4的外部的液压缸等驱动缸11构成的穿孔板移动装置。可动穿孔板9借助于该驱动缸11往复运动。连结驱动缸11的活塞杆11a和可动穿孔板9的连接棒12的部分贯通混合气体配管4。连接棒12贯通的配管4的部分上配设密封机构13。可动穿孔板9的位置不限于固定穿孔板8的上游侧,也可以配置于下游侧。而且穿孔板移动装置不限于液压缸,也可以采用电动机等。A perforated plate moving device constituted by a
而且驱动缸11的位置如图所示,不限于混合气体配管4的下方,也可以配置于上方,以悬挂可动穿孔板9的状态使其上下移动。而且也可以配置于混合气体配管4的侧面,使可动穿孔板9在水平方向上往复运动,还可以配置于上方与下方之间的任何位置上。Furthermore, the position of the
而且也可以形成使混合气体配管4中内装所述均匀化装置6的部分能够在混合气体配管4上装卸的结构。例如可以将混合气体配管4的均匀化装置6的前后切断,利用法兰等管接头将该部分连接于前后的混合气体配管4上。这样一来,能够取下该法兰的连接螺杆,使内装均匀化装置6的部分的管子与驱动缸11等一起向外移动。这样,在设备进行定期检查等时就容易对均匀化装置6进行维修保养。In addition, a portion of the
在各穿孔板8、9中,贯通孔10的中心之间的距离都形成为大于贯通孔10的直径。这样一来,可动穿孔板8能够在规定的距离上往复运动,停止在其间的任意位置上,借助于此,能够设定两片穿孔板8、9的全部贯通孔10之间相互一致,贯通孔10的开口率为100%的全开位置与全部贯通孔10之间完全不重叠地关闭,开口率为0%的全闭位置之间的任意位置(任意开口率)。对于这一点,参考下述表示具有3片穿孔板的均匀化装置16的图7(a)和图7(c)就清楚了。这样,为了使可动穿孔板9能够仅移动规定的距离,可动穿孔板9的外形做得比固定穿孔板8的外形小,两种穿孔板8、9的贯通孔10的配置分布在相同的位置上。In each of the
最大开口率的状态不特别限定于贯通孔10的全部面积开口的开口率100%的状态。例如也可以把贯通孔的全部面积的100%不到的状态作为最大开口状态。而且最小开口状态也不特别限定于贯通孔10的全部面积都关闭的开口率0%的状态。例如也可以把高于贯通孔的全部面积的0%的状态(稍微打开的状态)作为最小开口状态。如果是这样设定,所述贯通孔10的中心之间的间距就不必如上所述做成大于贯通孔10的直径。The state of the maximum aperture ratio is not particularly limited to the state in which the entire area of the through-
如上所述形成能够使穿孔板8、9的开口率改变的结构,是为了根据主气体与辅助气体的混合条件改变开口率,一边能够在该混合条件下进行最合适的混合。通过混合气体配管4内送来的混合气体的一部分,暂时被穿孔板8、9所阻塞,输出与管道的中心轴垂直的方向上的气流成分。由于这一作用,混合气体得到更充分的混合。通过穿孔板8、9的混合气体由于从贯通孔10向下游侧喷射的气体的作用,产生扩散涡流,气体的混合更加均匀化。借助于这样的机制,混合气体的混合更进一步实现均匀化。The purpose of changing the opening ratio of the
作为如上所述的均匀化装置6的下游侧设置的均匀度检测装置7,也可以采用检测混合气体配管4内的气体流路的剖面上的气体发热量分布的发热量检测装置。为了这一目的,只要将发热量检测装置7的多个检测部7a大致均匀地配置于流路的断面上。检测部7a的配置也不限于一个断面上,也可以如图所示在多个断面上配置。As the
在这里,作为发热量检测装置7,可以采用直接测量气体的发热量的所谓发热量计、测量可燃成分的含有率(浓度)的装置等。在重视检测速度的情况下,当前最好是采用可燃性气体浓度检测器(气体成分检测装置)。也可以采用根据所使用的低发热量气体主要包含的可燃成分的种类和发生主要浓度变动的可燃成分(例如直接还原炼铁法的副产品气体中的一氧化碳),检测该成分的浓度的浓度检测器。作为均匀度检测装置,不限于使用发热量检测装置。只要是例如检测气体流路的断面上的气体的比重分布用的密度检测装置等检测气体的性状的合适的装置,也可以采用各种各样的装置。Here, as the calorific
可以根据利用这种发热量检测装置7检测出的混合气体的混合状态,改变上述穿孔板8、9的贯通孔10的开口率,选择适于提高混合的均匀性的开口率。设置用于实现这种合适的开口率的控制装置30、通过调节提供给上述驱动缸11的工作油的油量调整活塞杆11a的冲程用的油量调节装置31、以及检测活塞杆11a的伸缩位置用的位置检测器32。The aperture ratios of the through-
控制装置30中存储以辅助气体的种类为参数的,表示该辅助气体的混合比(辅助气体与主气体的体积比)与其对应的穿孔板的最佳开口率的关系表。而且存储以可动穿孔板8的全开位置为基准,到全闭位置为止的活塞杆11a的被检测部位的位置。又存储穿孔板在全开位置与全闭位置之间移动所需要的工作油的供给油量。The
控制装置30在根据主气体的实测发热量值不超过燃烧装置的允许的上限值的要求选择减少发热量用气体的同时,计算需要的混合量,对辅助气体供给装置(未图示)发出指令。而且控制装置30在根据主气体的实测发热量值不低于允许的下限值的要求选择增加发热量用气体的同时,计算需要的混合量,对辅助气体供给装置发出指令。在增加发热量用气体和减少发热量用气体准备有多种的情况下,根据规定的基准选择适当的气体,计算该气体的必要的混合量。The
然后,从所述表中读取与主气体中辅助气体的混合量相应的穿孔板的目标开口率,根据该数值计算出可动穿孔板9的移动量,控制与其对应的对液压缸的工作油供给量,实现穿孔板的目标开口率。例如在辅助气体的混合比小的情况下,使开口率小。测量混合气体的发热量值与目标发热量值偏离的周期最好是设定得比发热量值检测时间长。Then, read the target aperture ratio of the perforated plate corresponding to the mixing amount of the auxiliary gas in the main gas from the table, calculate the movement amount of the movable
在均匀化装置6的下游侧用均匀度检测装置7测定混合气体的均匀度的情况下,也可以使检测值反馈地进行控制。在这种情况下,由于频繁地调整可动穿孔板,有时候系统可能不稳定,在这种情况下,也可以将该均匀度检测装置7主要作为均匀度的监控手段使用。When the uniformity of the mixed gas is measured by the
还可以形成混合气体配管4中内装该均匀度检测装置7的部分能够相对于混合气体配管4装卸的结构。这与上述均匀化装置6的装卸机构相同,能够通过采用法兰等管接头实现。这样就容易进行均匀度检测装置7的维修保养和校正。A portion of the
贯通孔10的形状不限于正圆形,也可以是椭圆形、包括正方形、长方形的多边形等。也可以采用图3所示的长贯通孔20。该长贯通孔20在与可动穿孔板9的移动方向垂直的方向上延伸,在可动穿孔板9的移动方向上保持间隔形成多处。该贯通孔20的间隔最好是等间隔。在图3(a)中,只能够看到可动穿孔板9的贯通孔20,但是当然在固定穿孔板8上也同样配置有相同大小和相同形状的多个贯通孔。该贯通孔20在形成于相同面积的穿孔板上的情况下比形成许多上述小的圆形或正方形的贯通孔10在全开时的开口面积大,在这一点上这种贯通孔20是理想的。The shape of the through
如果混合气体配管4沿着其长度方向具有一定的配管内径,则即使是将穿孔板8、9的开口率设定为100%,该处的开口面积也比混合气体配管4的流路的断面面积小。但是将全开状态时的穿孔板8、9的开口面积做得尽量大对于减小压力损失是理想的。为此,如图2所示,混合气体配管4的设置均匀化装置6的部分,其流路的断面面积比其上游侧和下游侧的部分的断面面积大。也就是说,本实施形态的混合气体配管4是圆形断面的配管,因此其管径被扩大。其结果是,穿孔板8、9的实际面积变大。随着其变大,全开时的穿孔板8、9全体的开口面积变大,可以做成与上游侧和下游侧的混合气体配管4的流路断面面积相等的面积或比其更大的面积。If the
在上述实施例中,扩大了直径的混合气体配管4的部分在均匀化装置6的前后为相同直径,但是并不限于这种结构。也可以选择将紧靠均匀化装置6的后面(下游侧)的部分的配管直径做得比紧靠该装置的前面(上游侧)的部分的配管直径大。如果这样,由于混合气体在刚通过均匀化装置6时膨胀扩散,可望进一步提高混合效果。In the above-mentioned embodiment, the portion of the
又如图2所示,通过将穿孔板8、9形成为能够设置为相对于混合气体配管4的中心轴的垂直面倾斜的状态的形状,可以进一步使开口面积增大。因为通过使穿孔板形成能够以倾斜的状态充满混合气体配管4的流路的形状(椭圆形),增加其实际面积,也能够使形成的贯通孔10的个数增加。例如在将相同大小形状的贯通孔10形成于同一间距的情况下,如果使穿孔板8、9相对于与混合气体配管4的中心轴垂直的面倾斜角度θ,则穿孔板的实际面积为其1/cosθ倍,因此贯通孔10的个数也大约为其1/cosθ倍,总体的开口面积也相同。As shown in FIG. 2, the opening area can be further increased by forming the
在这种情况下,贯通孔10相对于穿孔板8、9的穿孔方向,如图2所示,如果采用混合气体配管4的中心轴方向(流体的流动方向)则穿孔板的流路阻力小,因此是理想的。但是在这种情况下,由于是在相对于穿孔板面的垂直方向倾斜的方向上穿孔,所以加工费用上升。因此如果考虑降低加工成本,则也可以在与穿孔板8、9的表面垂直的方向上穿孔。In this case, the direction of the through-
如图4和图5所示,在固定穿孔板8上安装可动穿孔板9的移动的导向构件14。该导向构件14是在固定穿孔板8的可动穿孔板9一侧的面上的两侧部(可动穿孔板9的移动方向的两端侧)上设置的L字形剖面的构件。可动穿孔板9,其两侧部卡在导向构件14与固定穿孔板8之间以此对其滑动进行导向。还有,图4的固定穿孔板8和可动穿孔板9,表示其表面铅直状配置的状态、也就是垂直于混合气体配管4的中心轴配置的状态。As shown in FIGS. 4 and 5 , a
还有,在图4的均匀化装置中,驱动缸11连接于可动穿孔板9的上部,可动穿孔板9形成能够以悬挂于驱动缸11的状态移动的结构。又,图4表示上述驱动缸11的活塞杆11 a与可动穿孔板9的连接部分的详细情况。连结棒12固定于可动穿孔板9。连结棒12与活塞杆11a用销子连结。这只是例示,并不排除其他连结机构。在图4中,密封机构13的图示省略。Also, in the homogenizing device shown in FIG. 4 , the
图6~图9表示3片穿孔板构成的均匀化装置16。该均匀化装置16在利用衬垫15保持间隔平行地配置的两片固定穿孔板8之间可滑动地配置一片可动穿孔板9。两片固定穿孔板8保持与可动穿孔板9的厚度大致相同尺寸的间隔。3片穿孔板8、9的贯通孔10与上面所述相同,形成相同的大小、相同的形状、相同的配置。两片固定穿孔板8也可以如图所示,其各贯通孔10逐一相对配置。这样,如果如图7(a)所示可动穿孔板9移动,该均匀化装置16处于全开位置上,则可动穿孔板9的贯通孔10也与两片固定穿孔板8的贯通孔10一致,贯通孔10的开口率为100%。又,可动穿孔板9如果从全开位置移动贯通孔10的直径d的距离,则全部贯通孔10形成全闭状态(图7(c)),开口率为0%。图7(b)所示的是中间开口率的状态。6 to 9 show a homogenizing
如图8和图9所示,上述衬垫15配设于两片固定穿孔板9中间的两侧部,衬垫15之间的分开的距离大致等于可动穿孔板9的宽度尺寸。采用这样的结构,衬垫15与两片固定穿孔板8作为可动穿孔板9的导向构件起作用。As shown in FIGS. 8 and 9 , the
又,可动穿孔板9利用两片固定穿孔板8支持其两侧面,不必担心挠曲,因此能够将其板厚做得薄。其结果是,能够减轻穿孔板的重量,简化驱动机构,能够提高开口率的设定精度。Also, since the movable
贯通孔的配置不限于如上所述的围棋盘状配置(图4和图8)和上下多级配置(图3)。也可以采用例如配置于同心状而且等间隔的多个假想的圆上的贯通孔。在这种情况下,只要形成能够使可动穿孔板8围绕假想圆的中心转动的结构即可。因此,在各假想圆上贯通孔等间隔配置,越是接近中心的假想圆上的贯通孔其配置间隔越小。The arrangement of the through-holes is not limited to the chessboard-like arrangement ( FIGS. 4 and 8 ) and the up-and-down multistage arrangement ( FIG. 3 ) as described above. For example, through-holes arranged on a plurality of imaginary circles concentrically and equally spaced may be used. In this case, it is only necessary to form a structure capable of rotating the movable
图10~图12表示在穿孔板8、9的下游侧具备清洗穿孔板8、9相互之间的面和两穿孔板8、9的贯通孔用的清洗装置17的均匀化装置26。本实施形态的清洗装置17具备与可动穿孔板9的下游侧的面大致相对,上下保持间隔大致在水平方向上延伸设置的多支清洗液供给配管18。各清洗液供给配管18上保持间隔配设多个喷嘴19。如图11所示,清洗液供给配管18是从一支配管分叉为多支的。各分叉配管18利用法兰接头27安装于混合其他配管4上,其下游侧的前端利用封闭衬套(plug)28封闭。在清洗液供给配管18的上游侧部分设置开闭阀29。该开闭阀29也可以形成为能够在混合流体的供给停止期间自动地间歇性开闭的结构。图11中导向构件14和驱动缸11的图示省略。10 to 12 show a homogenizing
该喷嘴19考虑清洗效果最好是与贯通孔10相同数目,而且与贯通孔10一一对应配置。但是并不限定于这样的结构。例如只要将喷嘴配置为能够从各喷嘴19将清洗液喷射到比较大的范围,而且能够将清洗液喷射到包括处于最上面的位置的贯通孔10的许多贯通孔中即可。即使是清洗液在穿孔板8、9上向下方流过也能够发挥清洗效果。而且使多支清洗液供给配管18能够分别围绕该中心轴旋转,这样使得喷嘴19的方向能够在上下方向上容易地变更。而且也可以在混合气体配管4上设置检查窗口,以便能够目视确认清洗装置17和穿孔板8、9。以此对清洗状态进行确认,结果,能够根据需要,使清洗液供给配管18转动,改变喷嘴19的方向,将清洗液的喷射角度调整为最合适的角度。Considering the cleaning effect, the number of the
而且设置的喷射喷嘴19的个数没有限定,也可以采用一个能够将清洗液喷射到较大范围的喷嘴。在这种情况下,清洗液供给配管18只要配设一支。在清洗装置17近旁的混合气体配管4的底部,形成收集清洗后的清洗液用的集液槽33,该集液槽33的底部也可以形成排液用的漏孔34。Moreover, the number of
清洗装置17的设置位置不限定于穿孔板8、9的下游侧,也可以是上游侧,还可以在上游侧和下游侧两侧上设置。图示的穿孔板8、9竖立设置在铅直方向上,但是在图2和图6所示那样将穿孔板8、9倾斜设置的情况下,最好是将清洗装置17设置于其上表面侧(图2和图6中的穿孔板右侧)。因为与在下表面侧上设置的情况相比,喷射出的清洗液流过穿孔板的面上落下,这样能够提高清洗效果。The installation position of the
由于具备上述清洗装置17,能够防止例如粉尘等附着于穿孔板或其贯通孔上增大流路阻力或发生穿孔板的所谓粘附的情况发生。这样,在该混合流体供给设备1的运行停止时,操作人员不需要为了清洗均匀化装置6而进入管道内或大大减少进入管道内的次数。With the above-mentioned
对于内装有该清洗装置17的混合气体配管4的部分,也与上面所述相同,通过采用法兰等管道接头,可以构成能够在混合气体配管4的其他部分装卸的结构。这样就使清洗装置17的维修保养变得容易。The portion of the
图13表示其他形态的混合气体配管21。该混合气体配管21,其平行延伸的两支配管21a、21b的端部之间利用直角的短管21c连接。这样构成是为了利用简易结构充分扩大均匀化装置6的部分的混合气体配管21c的流路面积。而且两支配管21a、21b可以在横方向上平行配置,但是如图所示上下平行配置的情况下,上述短管21c在上下方向上延伸,穿孔板8、9其平面大致平行地配置,因此是理想的。因为这样一来,能够配置为把可动穿孔板9载置于固定穿孔板8的上表面的状态,因此可动穿孔板9的移动稳定。而且混合气体配管21不限于如图所示混合流体的流动从均匀化装置6的下面向上的状态,也可以是均匀化装置6的上游侧配管21a配置于下游侧配管21b上方,混合流体从均匀化装置6的上面向下流动。FIG. 13 shows another form of
而且也可以不是如上所述利用与其垂直的短管21c连接两支配管21a、21b,而是也可以如图14所示,两支配管21a、21b利用倾斜的短管21d、即在相对于两支配管21a、21b的中心轴形成钝角的方向上延伸的短管21d连接。利用这样的方法,不仅管道的压力损失减小,由于穿孔板8、9相对于倾斜短管21d的中心轴倾斜配置,穿孔板8、9的实际面积相对于管道的断面的面积增大了,穿孔板8、9产生的阻力下降了。And it is not possible to connect the two
以上说明的均匀化装置6、16除了使混合气体均匀化以外,还有优异的功能,这种功能通过设置于对例如燃气轮机提供燃料气体的配管上发挥。在使上述燃烧装置紧急停止时,关闭为了使燃料气体的供给在瞬间停止而在燃料气体供给配管上设置的紧急截止阀。这样一来,由于燃料气体流的运动量的急剧变化,就要向燃料气体供给配管上游侧传播压力的急剧变动。这时通过适时地使均匀化装置6、16的开口率急剧减小或使其为0,能够抑制或停止上述压力传播。其结果是,能够不设置缓冲罐和向大气排放的排放塔,或是至少可以谋求使其减小容量。The above-described
图15~图17表示为了抑制、防止这样从配管的下游侧向上游侧传播急剧的压力变动而使用穿孔板的另一实施形态,这一实施形态具备能够围绕通过其中心的假想直线转动的一片旋转穿孔板22。图15所示的配管23采用圆形断面的配管,因此该旋转穿孔板如图16所示呈圆形。当然不限于圆形,例如对于四方形断面的配管选择图17所示的四方形的旋转穿孔板24等,只要对应于配管的断面选择形状即可。但是不必形成与在配管中心轴的垂直面切断的断面相同的形状。也可以形成与从配管中心轴的垂直面向前后倾斜的断面形状相同的形状。而且如图所示,为了加大全部贯通孔10的开口面积,也可以对旋转穿孔板22的设置部分扩大配管23的直径。贯通孔10的形状与上述均匀化装置6、16的相同,不限于正圆形,也可以是椭圆形、包括正方形或长方形的多边形等。15 to 17 show another embodiment using a perforated plate in order to suppress and prevent such a sudden pressure change from the downstream side of the pipe to the upstream side. The
在这样形成的旋转穿孔板22的两侧端上,突出设置通过旋转穿孔板22、24的中心,贯通配管在横方向上延伸的旋转轴25。该旋转轴25连接于在配管23的外部设置的未图示的旋转驱动设备。旋转驱动设备可以采用例如电动机、液压缸等。利用该旋转驱动设备驱动旋转轴25旋转,使旋转穿孔板22、24在配管内的流路扩展到最大的位置(如图15的实线所示,如果没有贯通孔流路就会闭塞的位置、即所谓全闭位置)与其表面沿着配管的中心轴的方向的位置(图15的2点锁线所示的位置、即所谓全开位置)之间转动。而且也可以形成能够使其在这两个位置之间的任意角度的位置上停止的结构。On both side ends of the rotary
图15~图17所示的实施形态中,旋转穿孔板22、24形成能够围绕水平方向的轴转动的结构,但是并不限于此。例如可以围绕铅直轴转动,也可以围绕水平与铅直之间的任意旋转轴转动。而且也可以设置检测旋转穿孔板22、24的停止位置用的旋转位置检测装置,以确认旋转穿孔板是否停止在合适的位置上。In the embodiments shown in FIGS. 15 to 17 , the rotary
这种旋转穿孔板22、24在上述燃烧装置通常运行时处于全开状态,使得燃料气体流不会受到大阻力。但是在如上所述配管23的下游的紧急截止阀关闭,要向上游传播急剧的压力变化时旋转穿孔板22、24急剧转动到全闭位置上,因此流体的流路最终只有旋转穿孔板的贯通孔10,所以配管23内部的流路阻力急剧增加,压力变动衰减,其传播受到抑制。Such rotating
该旋转穿孔板22、24除了这一目的以外,也可以作为混合流体的混合均匀化装置使用。The rotary
在以上说明的实施形态中,燃烧设备以燃气轮机为例进行了说明,但是本发明的使用不特别限定于燃气轮机。作为燃烧设备,也可以是例如火力锅炉、柴油机和燃气发动机(gas engine)等内燃机。要而言之,可以将本发明使用于输入的发热量变动只要在一定的范围内就能够维持燃烧的燃烧设备。In the embodiments described above, the gas turbine was used as an example of the combustion facility, but the application of the present invention is not particularly limited to the gas turbine. As combustion equipment, internal combustion engines such as thermal boilers, diesel engines, and gas engines may also be used. In other words, the present invention can be applied to combustion equipment in which combustion can be maintained as long as the input calorific value fluctuates within a certain range.
工业应用性Industrial applicability
如果采用本发明的混合流体均匀化装置,则可以与是否设置已有的混合器无关地提高所提供的流体的混合均匀性。而且作为均匀化装置的使用对象虽然以气体为例,但是不限于这样的气体。也可以使用于流体供给设备。而且也可以使用于粉末、浆液等的供给设备。According to the device for homogenizing the mixed fluid of the present invention, the mixing uniformity of the supplied fluid can be improved irrespective of whether an existing mixer is provided. In addition, although gas is used as an example of the homogenizing device, it is not limited to such gas. Can also be used in fluid supply equipment. Furthermore, it can also be used in supply equipment for powder, slurry, etc.
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Families Citing this family (304)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102501472B1 (en) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method |
| KR102600229B1 (en) | 2018-04-09 | 2023-11-10 | 에이에스엠 아이피 홀딩 비.브이. | Substrate supporting device, substrate processing apparatus including the same and substrate processing method |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| KR102709511B1 (en) | 2018-05-08 | 2024-09-24 | 에이에스엠 아이피 홀딩 비.브이. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
| KR20190129718A (en) | 2018-05-11 | 2019-11-20 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures |
| KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| TWI840362B (en) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Wafer handling chamber with moisture reduction |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| CN120591748A (en) | 2018-06-27 | 2025-09-05 | Asm Ip私人控股有限公司 | Cyclic deposition methods for forming metal-containing materials and films and structures |
| US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| KR102686758B1 (en) | 2018-06-29 | 2024-07-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
| US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
| US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102707956B1 (en) | 2018-09-11 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
| US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
| CN110970344B (en) | 2018-10-01 | 2024-10-25 | Asmip控股有限公司 | Substrate holding device, system including the same and method of using the same |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
| CN109098028B (en) * | 2018-10-15 | 2019-08-16 | 维达纸业(浙江)有限公司 | A kind of paper machine vacuum suction box face plate and its remodeling method |
| KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
| KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
| USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
| US12378665B2 (en) | 2018-10-26 | 2025-08-05 | Asm Ip Holding B.V. | High temperature coatings for a preclean and etch apparatus and related methods |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| KR102748291B1 (en) | 2018-11-02 | 2024-12-31 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| CN109448507A (en) * | 2018-11-15 | 2019-03-08 | 安徽徽煌教育科技有限公司 | A kind of geographical teaching ocean current apparatus for demonstrating |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| JP7504584B2 (en) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method and system for forming device structures using selective deposition of gallium nitride - Patents.com |
| TWI866480B (en) | 2019-01-17 | 2024-12-11 | 荷蘭商Asm Ip 私人控股有限公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| KR102727227B1 (en) | 2019-01-22 | 2024-11-07 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
| CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for forming topologically selective films of silicon oxide |
| JP7509548B2 (en) | 2019-02-20 | 2024-07-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | Cyclic deposition method and apparatus for filling recesses formed in a substrate surface - Patents.com |
| KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
| TWI873122B (en) | 2019-02-20 | 2025-02-21 | 荷蘭商Asm Ip私人控股有限公司 | Method of filling a recess formed within a surface of a substrate, semiconductor structure formed according to the method, and semiconductor processing apparatus |
| US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
| TWI842826B (en) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| KR102782593B1 (en) | 2019-03-08 | 2025-03-14 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
| KR102858005B1 (en) | 2019-03-08 | 2025-09-09 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
| KR20200116033A (en) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | Door opener and substrate processing apparatus provided therewith |
| KR102809999B1 (en) | 2019-04-01 | 2025-05-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
| US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
| CN109991302B (en) * | 2019-04-30 | 2022-02-08 | 广东赛能科技股份有限公司 | Online measuring device and method for oxidation-reduction potential of water body |
| KR102869364B1 (en) | 2019-05-07 | 2025-10-10 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
| KR102929471B1 (en) | 2019-05-07 | 2026-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
| KR102929472B1 (en) | 2019-05-10 | 2026-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
| JP7598201B2 (en) | 2019-05-16 | 2024-12-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | Wafer boat handling apparatus, vertical batch furnace and method |
| JP7612342B2 (en) | 2019-05-16 | 2025-01-14 | エーエスエム・アイピー・ホールディング・ベー・フェー | Wafer boat handling apparatus, vertical batch furnace and method |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
| USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
| KR20200141002A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of using a gas-phase reactor system including analyzing exhausted gas |
| KR102918757B1 (en) | 2019-06-10 | 2026-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Method for cleaning quartz epitaxial chambers |
| KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
| KR102911421B1 (en) | 2019-07-03 | 2026-01-12 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
| JP7499079B2 (en) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | Plasma device using coaxial waveguide and substrate processing method |
| CN112216646B (en) | 2019-07-10 | 2026-02-10 | Asmip私人控股有限公司 | Substrate support assembly and substrate processing apparatus including the thereof |
| KR102895115B1 (en) | 2019-07-16 | 2025-12-03 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| TWI826704B (en) | 2019-07-17 | 2023-12-21 | 荷蘭商Asm Ip私人控股有限公司 | Radical assist ignition plasma system and method |
| KR102860110B1 (en) | 2019-07-17 | 2025-09-16 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| KR102903090B1 (en) | 2019-07-19 | 2025-12-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of Forming Topology-Controlled Amorphous Carbon Polymer Film |
| TWI839544B (en) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming topology-controlled amorphous carbon polymer film |
| KR102083387B1 (en) * | 2019-07-29 | 2020-03-04 | (주)화인테크워터 | Pellet |
| CN112309900B (en) | 2019-07-30 | 2025-11-04 | Asmip私人控股有限公司 | Substrate processing equipment |
| US12169361B2 (en) | 2019-07-30 | 2024-12-17 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| CN112309899B (en) | 2019-07-30 | 2025-11-14 | Asmip私人控股有限公司 | Substrate processing equipment |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| CN112323048B (en) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | Liquid level sensor for chemical source container |
| KR20210018761A (en) | 2019-08-09 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | heater assembly including cooling apparatus and method of using same |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| JP7810514B2 (en) | 2019-08-21 | 2026-02-03 | エーエスエム・アイピー・ホールディング・ベー・フェー | Film-forming raw material mixed gas generating device and film-forming device |
| USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| KR102928101B1 (en) | 2019-08-23 | 2026-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| KR102806450B1 (en) | 2019-09-04 | 2025-05-12 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
| KR102733104B1 (en) | 2019-09-05 | 2024-11-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film through cyclic plasma enhanced deposition process |
| KR102948143B1 (en) | 2019-10-08 | 2026-04-07 | 에이에스엠 아이피 홀딩 비.브이. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
| TW202128273A (en) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip私人控股有限公司 | Gas injection system, reactor system, and method of depositing material on surface of substratewithin reaction chamber |
| TWI846953B (en) | 2019-10-08 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
| TWI846966B (en) | 2019-10-10 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming a photoresist underlayer and structure including same |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| TWI834919B (en) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | Method of topology-selective film formation of silicon oxide |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| KR102845724B1 (en) | 2019-10-21 | 2025-08-13 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
| KR20210050453A (en) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| KR102861314B1 (en) | 2019-11-20 | 2025-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
| US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| CN112951697B (en) | 2019-11-26 | 2025-07-29 | Asmip私人控股有限公司 | Substrate processing apparatus |
| CN120432376A (en) | 2019-11-29 | 2025-08-05 | Asm Ip私人控股有限公司 | Substrate processing equipment |
| CN112885692B (en) | 2019-11-29 | 2025-08-15 | Asmip私人控股有限公司 | Substrate processing apparatus |
| JP7527928B2 (en) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | Substrate processing apparatus and substrate processing method |
| KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| TWI887322B (en) | 2020-01-06 | 2025-06-21 | 荷蘭商Asm Ip私人控股有限公司 | Reactor system, lift pin, and processing method |
| KR20210089077A (en) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply assembly, components thereof, and reactor system including same |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| KR102882467B1 (en) | 2020-01-16 | 2025-11-05 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming high aspect ratio features |
| KR102675856B1 (en) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
| TWI889744B (en) | 2020-01-29 | 2025-07-11 | 荷蘭商Asm Ip私人控股有限公司 | Contaminant trap system, and baffle plate stack |
| TW202513845A (en) | 2020-02-03 | 2025-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Semiconductor structures and methods for forming the same |
| TWI908758B (en) | 2020-02-04 | 2025-12-21 | 荷蘭商Asm Ip私人控股有限公司 | Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| KR102916725B1 (en) | 2020-02-13 | 2026-01-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus including light receiving device and calibration method of light receiving device |
| KR20210103953A (en) | 2020-02-13 | 2021-08-24 | 에이에스엠 아이피 홀딩 비.브이. | Gas distribution assembly and method of using same |
| US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
| TWI895326B (en) | 2020-02-28 | 2025-09-01 | 荷蘭商Asm Ip私人控股有限公司 | System dedicated for parts cleaning |
| KR102943116B1 (en) | 2020-03-04 | 2026-03-23 | 에이에스엠 아이피 홀딩 비.브이. | Alignment fixture for a reactor system |
| KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
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Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60122068U (en) * | 1984-01-27 | 1985-08-17 | 三菱重工業株式会社 | gate valve |
| JPH0828718A (en) * | 1994-07-12 | 1996-02-02 | Kubota Corp | Orifice valve |
| JPH10314563A (en) * | 1997-05-19 | 1998-12-02 | Toshiba Mach Co Ltd | Powder mixed gas generator |
| JP2000297864A (en) * | 1999-04-15 | 2000-10-24 | Kubota Corp | Perforated variable orifice valve |
-
2005
- 2005-07-26 KR KR1020077021473A patent/KR100961016B1/en not_active Expired - Fee Related
- 2005-07-26 CN CN2005800491106A patent/CN101142012B/en not_active Expired - Fee Related
- 2005-07-26 JP JP2007526769A patent/JP4684295B2/en not_active Expired - Fee Related
- 2005-07-26 BR BRPI0520522A patent/BRPI0520522B1/en not_active IP Right Cessation
- 2005-07-26 WO PCT/JP2005/013665 patent/WO2007013143A1/en not_active Ceased
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101142012A (en) | 2008-03-12 |
| WO2007013143A1 (en) | 2007-02-01 |
| JPWO2007013143A1 (en) | 2009-02-05 |
| JP4684295B2 (en) | 2011-05-18 |
| KR100961016B1 (en) | 2010-06-01 |
| KR20070116826A (en) | 2007-12-11 |
| BRPI0520522B1 (en) | 2016-07-26 |
| BRPI0520522A2 (en) | 2009-08-25 |
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