CN101459189A - 具有钉扎浮置扩散二极管的图像传感器 - Google Patents

具有钉扎浮置扩散二极管的图像传感器 Download PDF

Info

Publication number
CN101459189A
CN101459189A CNA2009100034810A CN200910003481A CN101459189A CN 101459189 A CN101459189 A CN 101459189A CN A2009100034810 A CNA2009100034810 A CN A2009100034810A CN 200910003481 A CN200910003481 A CN 200910003481A CN 101459189 A CN101459189 A CN 101459189A
Authority
CN
China
Prior art keywords
zone
electric charge
sensor cell
pixel sensor
type zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2009100034810A
Other languages
English (en)
Chinese (zh)
Inventor
洪性权
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of CN101459189A publication Critical patent/CN101459189A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CNA2009100034810A 2003-09-05 2004-09-02 具有钉扎浮置扩散二极管的图像传感器 Pending CN101459189A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/654,938 US7115855B2 (en) 2003-09-05 2003-09-05 Image sensor having pinned floating diffusion diode
US10/654938 2003-09-05

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800324880A Division CN100468755C (zh) 2003-09-05 2004-09-02 具有钉扎浮置扩散二极管的图像传感器

Publications (1)

Publication Number Publication Date
CN101459189A true CN101459189A (zh) 2009-06-17

Family

ID=34226043

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2004800324880A Expired - Fee Related CN100468755C (zh) 2003-09-05 2004-09-02 具有钉扎浮置扩散二极管的图像传感器
CNA2009100034810A Pending CN101459189A (zh) 2003-09-05 2004-09-02 具有钉扎浮置扩散二极管的图像传感器

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CNB2004800324880A Expired - Fee Related CN100468755C (zh) 2003-09-05 2004-09-02 具有钉扎浮置扩散二极管的图像传感器

Country Status (7)

Country Link
US (4) US7115855B2 (de)
EP (1) EP1668701B1 (de)
JP (1) JP2007504670A (de)
KR (1) KR100854230B1 (de)
CN (2) CN100468755C (de)
TW (1) TWI281744B (de)
WO (1) WO2005041304A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106531754A (zh) * 2015-09-10 2017-03-22 精工爱普生株式会社 固态摄像元件及其制造方法、以及电子设备

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105793B2 (en) * 2003-07-02 2006-09-12 Micron Technology, Inc. CMOS pixels for ALC and CDS and methods of forming the same
US6908839B2 (en) * 2003-09-17 2005-06-21 Micron Technology, Inc. Method of producing an imaging device
US7238977B2 (en) 2004-08-19 2007-07-03 Micron Technology, Inc. Wide dynamic range sensor having a pinned diode with multiple pinned voltages
US7071019B2 (en) * 2004-09-16 2006-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. System and method to improve image sensor sensitivity
US7348651B2 (en) * 2004-12-09 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd. Pinned photodiode fabricated with shallow trench isolation
US7635880B2 (en) * 2004-12-30 2009-12-22 Ess Technology, Inc. Method and apparatus for proximate CMOS pixels
US7205627B2 (en) * 2005-02-23 2007-04-17 International Business Machines Corporation Image sensor cells
JP4677258B2 (ja) * 2005-03-18 2011-04-27 キヤノン株式会社 固体撮像装置及びカメラ
US7205591B2 (en) * 2005-04-06 2007-04-17 International Business Machines Corporation Pixel sensor cell having reduced pinning layer barrier potential and method thereof
US7718459B2 (en) * 2005-04-15 2010-05-18 Aptina Imaging Corporation Dual conversion gain pixel using Schottky and ohmic contacts to the floating diffusion region and methods of fabrication and operation
US7468501B2 (en) * 2005-05-12 2008-12-23 California Institute Of Technology Linear dynamic range enhancement in a CMOS imager
US8039875B2 (en) * 2005-08-08 2011-10-18 International Business Machines Corporation Structure for pixel sensor cell that collects electrons and holes
US7439561B2 (en) * 2005-08-08 2008-10-21 International Business Machines Corporation Pixel sensor cell for collecting electrons and holes
US7436011B2 (en) * 2005-11-10 2008-10-14 Pixart Imaging Inc. CMOS image sensor
KR100790228B1 (ko) * 2005-12-26 2008-01-02 매그나칩 반도체 유한회사 시모스 이미지 센서
KR100760913B1 (ko) * 2005-12-29 2007-09-21 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 이의 제조 방법
KR100790586B1 (ko) * 2006-05-25 2008-01-02 (주) 픽셀플러스 Ｃｍｏｓ 이미지 센서 액티브 픽셀 및 그 신호 감지 방법
KR100738516B1 (ko) * 2006-05-25 2007-07-11 (주) 픽셀플러스 커플링 캐패시터를 사용하는 핀드 포토다이오드를 포함하는액티브 픽셀 및 그의 신호 감지 방법
JP4467542B2 (ja) * 2006-06-15 2010-05-26 日本テキサス・インスツルメンツ株式会社 固体撮像装置
US7470945B2 (en) * 2006-12-01 2008-12-30 United Microelectronics Corp. CMOS image sensor and an additional N-well for connecting a floating node to a source follower transistor
KR100976886B1 (ko) * 2006-12-22 2010-08-18 크로스텍 캐피탈, 엘엘씨 부동 베이스 판독 개념을 갖는 ｃｍｏｓ 이미지 센서
US20080157149A1 (en) * 2006-12-27 2008-07-03 Dongbu Hitek Co., Ltd. CMOS image sensor and method for manufacturing the same
KR100806783B1 (ko) * 2006-12-29 2008-02-27 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 형성 방법
US7528427B2 (en) 2007-01-30 2009-05-05 International Business Machines Corporation Pixel sensor cell having asymmetric transfer gate with reduced pinning layer barrier potential
KR100835893B1 (ko) * 2007-03-20 2008-06-09 (주)실리콘화일 발광변환기를 갖는 포토다이오드
US7834411B2 (en) * 2007-05-15 2010-11-16 Foveon, Inc. CMOS pixel sensor with depleted photocollectors and a depleted common node
US7804052B2 (en) * 2007-06-08 2010-09-28 Aptina Imaging Corp. Methods and apparatuses for pixel testing
US20090001427A1 (en) * 2007-06-29 2009-01-01 Adkisson James W Charge carrier barrier for image sensor
KR100910936B1 (ko) * 2007-08-09 2009-08-06 (주)실리콘화일 영상감도 및 다이내믹 레인지를 향상시키는 단위픽셀
US20090115878A1 (en) * 2007-11-07 2009-05-07 Micron Technology, Inc. Method, system and apparatus to boost pixel floating diffusion node voltage
US7858914B2 (en) 2007-11-20 2010-12-28 Aptina Imaging Corporation Method and apparatus for reducing dark current and hot pixels in CMOS image sensors
KR101002121B1 (ko) * 2007-12-27 2010-12-16 주식회사 동부하이텍 이미지센서 및 그 제조방법
US20090179294A1 (en) * 2007-12-27 2009-07-16 Jeong-Yel Jang Image sensor and method for manufacturing the same
KR100882467B1 (ko) * 2007-12-28 2009-02-09 주식회사 동부하이텍 이미지센서 및 그 제조방법
KR100922922B1 (ko) * 2007-12-28 2009-10-22 주식회사 동부하이텍 이미지센서 및 그 제조방법
US20090201400A1 (en) * 2008-02-08 2009-08-13 Omnivision Technologies, Inc. Backside illuminated image sensor with global shutter and storage capacitor
KR20090098230A (ko) * 2008-03-13 2009-09-17 삼성전자주식회사 누설전류를 감소시킨 시모스 이미지 센서
WO2010007594A1 (en) * 2008-07-17 2010-01-21 Microsoft International Holdings B.V. Cmos photogate 3d camera system having improved charge sensing cell and pixel geometry
US20100079633A1 (en) * 2008-09-30 2010-04-01 Kim Jong Man Image sensor and manufacturing method of image sensor
JP5251736B2 (ja) 2009-06-05 2013-07-31 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
US8138531B2 (en) * 2009-09-17 2012-03-20 International Business Machines Corporation Structures, design structures and methods of fabricating global shutter pixel sensor cells
US8212297B1 (en) * 2011-01-21 2012-07-03 Hong Kong Applied Science and Technology Research Institute Company Limited High optical efficiency CMOS image sensor
US8455971B2 (en) 2011-02-14 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for improving charge transfer in backside illuminated image sensor
US20120249740A1 (en) * 2011-03-30 2012-10-04 Tae-Yon Lee Three-dimensional image sensors, cameras, and imaging systems
US10090349B2 (en) 2012-08-09 2018-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor chips with stacked scheme and methods for forming the same
US8957358B2 (en) 2012-04-27 2015-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor chips with stacked scheme and methods for forming the same
US8629524B2 (en) 2012-04-27 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for vertically integrated backside illuminated image sensors
US9153565B2 (en) 2012-06-01 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensors with a high fill-factor
US9601538B2 (en) * 2012-05-03 2017-03-21 Semiconductor Components Industries, Llc Image sensors with photoelectric films
KR102017713B1 (ko) * 2012-05-31 2019-09-03 삼성전자주식회사 시모스 이미지 센서
CN104380467B (zh) * 2012-06-27 2017-11-17 松下知识产权经营株式会社 固体摄像装置
KR102033610B1 (ko) * 2012-07-13 2019-10-17 삼성전자주식회사 이미지 센서 및 이의 형성 방법
CN103779365B (zh) * 2012-10-19 2016-06-22 比亚迪股份有限公司 宽动态范围像素单元、其制造方法及其构成的图像传感器
US9276031B2 (en) 2013-03-04 2016-03-01 Apple Inc. Photodiode with different electric potential regions for image sensors
US9741754B2 (en) * 2013-03-06 2017-08-22 Apple Inc. Charge transfer circuit with storage nodes in image sensors
US9147710B2 (en) 2013-07-23 2015-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Photodiode gate dielectric protection layer
US9596423B1 (en) 2013-11-21 2017-03-14 Apple Inc. Charge summing in an image sensor
US10103287B2 (en) * 2013-11-29 2018-10-16 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement and formation thereof
US10285626B1 (en) 2014-02-14 2019-05-14 Apple Inc. Activity identification using an optical heart rate monitor
US9497397B1 (en) 2014-04-08 2016-11-15 Apple Inc. Image sensor with auto-focus and color ratio cross-talk comparison
US9686485B2 (en) 2014-05-30 2017-06-20 Apple Inc. Pixel binning in an image sensor
US9912883B1 (en) 2016-05-10 2018-03-06 Apple Inc. Image sensor with calibrated column analog-to-digital converters
US10658419B2 (en) 2016-09-23 2020-05-19 Apple Inc. Stacked backside illuminated SPAD array
CN110235024B (zh) 2017-01-25 2022-10-28 苹果公司 具有调制灵敏度的spad检测器
US10656251B1 (en) 2017-01-25 2020-05-19 Apple Inc. Signal acquisition in a SPAD detector
US10962628B1 (en) 2017-01-26 2021-03-30 Apple Inc. Spatial temporal weighting in a SPAD detector
DE102017110129B4 (de) 2017-05-10 2020-07-09 Basler Ag Verbesserung eines Pixelqualitätswertes
US10622538B2 (en) 2017-07-18 2020-04-14 Apple Inc. Techniques for providing a haptic output and sensing a haptic input using a piezoelectric body
US10440301B2 (en) 2017-09-08 2019-10-08 Apple Inc. Image capture device, pixel, and method providing improved phase detection auto-focus performance
US10283558B1 (en) * 2018-05-07 2019-05-07 Omnivision Technologies, Inc. Floating diffusion of image sensor with low leakage current
US12015862B2 (en) * 2018-05-24 2024-06-18 Gigajot Technology, Inc. Image sensor having pixels with isolated floating diffusions
US11019294B2 (en) 2018-07-18 2021-05-25 Apple Inc. Seamless readout mode transitions in image sensors
US10848693B2 (en) 2018-07-18 2020-11-24 Apple Inc. Image flare detection using asymmetric pixels
US11233966B1 (en) 2018-11-29 2022-01-25 Apple Inc. Breakdown voltage monitoring for avalanche diodes
US11563910B2 (en) 2020-08-04 2023-01-24 Apple Inc. Image capture devices having phase detection auto-focus pixels
US12356740B2 (en) 2020-09-25 2025-07-08 Apple Inc. Transistor integration with stacked single-photon avalanche diode (SPAD) pixel arrays
US11546532B1 (en) 2021-03-16 2023-01-03 Apple Inc. Dynamic correlated double sampling for noise rejection in image sensors
US12192644B2 (en) 2021-07-29 2025-01-07 Apple Inc. Pulse-width modulation pixel sensor
US12069384B2 (en) 2021-09-23 2024-08-20 Apple Inc. Image capture devices having phase detection auto-focus pixels
US11881492B2 (en) * 2022-01-13 2024-01-23 Semiconductor Components Industries, Llc Transistor structures
CN115295568B (zh) * 2022-08-17 2024-08-30 武汉新芯集成电路股份有限公司 图像传感器及其制作方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61111057A (ja) 1984-11-06 1986-05-29 Canon Inc 画像読取装置
US5625210A (en) * 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US5903021A (en) * 1997-01-17 1999-05-11 Eastman Kodak Company Partially pinned photodiode for solid state image sensors
US5912942A (en) * 1997-06-06 1999-06-15 Schick Technologies, Inc. X-ray detection system using active pixel sensors
US6344877B1 (en) 1997-06-12 2002-02-05 International Business Machines Corporation Image sensor with dummy pixel or dummy pixel array
US5880495A (en) 1998-01-08 1999-03-09 Omnivision Technologies, Inc. Active pixel with a pinned photodiode
US6218691B1 (en) * 1998-06-30 2001-04-17 Hyundai Electronics Industries Co., Ltd. Image sensor with improved dynamic range by applying negative voltage to unit pixel
US6140630A (en) 1998-10-14 2000-10-31 Micron Technology, Inc. Vcc pump for CMOS imagers
JP3655760B2 (ja) * 1998-11-20 2005-06-02 三菱電機株式会社 赤外線固体撮像素子
AU3511400A (en) 1999-03-01 2000-09-21 Photobit Corporation Active pixel sensor with fully-depleted buried photoreceptor
US6376868B1 (en) 1999-06-15 2002-04-23 Micron Technology, Inc. Multi-layered gate for a CMOS imager
US6310366B1 (en) 1999-06-16 2001-10-30 Micron Technology, Inc. Retrograde well structure for a CMOS imager
US6326652B1 (en) 1999-06-18 2001-12-04 Micron Technology, Inc., CMOS imager with a self-aligned buried contact
US6204524B1 (en) 1999-07-14 2001-03-20 Micron Technology, Inc. CMOS imager with storage capacitor
US6333205B1 (en) 1999-08-16 2001-12-25 Micron Technology, Inc. CMOS imager with selectively silicided gates
US6307195B1 (en) * 1999-10-26 2001-10-23 Eastman Kodak Company Variable collection of blooming charge to extend dynamic range
US6339248B1 (en) * 1999-11-15 2002-01-15 Omnivision Technologies, Inc. Optimized floating P+ region photodiode for a CMOS image sensor
US6710804B1 (en) * 2000-01-18 2004-03-23 Eastman Kodak Company CMOS active pixel image sensor with extended dynamic range and sensitivity
TW516184B (en) * 2000-06-20 2003-01-01 Pixelplus Co Ltd CMOS active pixel for improving sensitivity
US6566697B1 (en) * 2000-11-28 2003-05-20 Dalsa, Inc. Pinned photodiode five transistor pixel
DE60134143D1 (de) * 2001-10-16 2008-07-03 Suisse Electronique Microtech Photodetektor mit grossem Dynamikbereich und erhöhtem Arbeitstemperaturbereich
US6794627B2 (en) * 2001-10-24 2004-09-21 Foveon, Inc. Aggregation of active pixel sensor signals
KR100830328B1 (ko) * 2001-12-21 2008-05-16 매그나칩 반도체 유한회사 시모스 이미지센서 및 제조방법
KR100462164B1 (ko) * 2002-01-11 2004-12-17 매그나칩 반도체 유한회사 필팩터를 향상시킨 씨모스 이미지센서
JP2004014911A (ja) * 2002-06-10 2004-01-15 Renesas Technology Corp 半導体装置およびその製造方法
US6921934B2 (en) * 2003-03-28 2005-07-26 Micron Technology, Inc. Double pinned photodiode for CMOS APS and method of formation
US7105793B2 (en) * 2003-07-02 2006-09-12 Micron Technology, Inc. CMOS pixels for ALC and CDS and methods of forming the same
US7115925B2 (en) * 2005-01-14 2006-10-03 Omnivision Technologies, Inc. Image sensor and pixel having an optimized floating diffusion
US20070023796A1 (en) * 2005-07-27 2007-02-01 International Business Machines Corporation Pinning layer for pixel sensor cell and method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106531754A (zh) * 2015-09-10 2017-03-22 精工爱普生株式会社 固态摄像元件及其制造方法、以及电子设备

Also Published As

Publication number Publication date
CN100468755C (zh) 2009-03-11
EP1668701B1 (de) 2013-10-30
WO2005041304A3 (en) 2005-06-30
KR100854230B1 (ko) 2008-08-25
KR20060039945A (ko) 2006-05-09
CN1875486A (zh) 2006-12-06
US7119322B2 (en) 2006-10-10
WO2005041304A2 (en) 2005-05-06
TW200514249A (en) 2005-04-16
US20060202108A1 (en) 2006-09-14
US20060131481A1 (en) 2006-06-22
US7394056B2 (en) 2008-07-01
TWI281744B (en) 2007-05-21
US7279672B2 (en) 2007-10-09
US20070057158A1 (en) 2007-03-15
JP2007504670A (ja) 2007-03-01
US7115855B2 (en) 2006-10-03
EP1668701A2 (de) 2006-06-14
US20050051701A1 (en) 2005-03-10

Similar Documents

Publication Publication Date Title
CN100468755C (zh) 具有钉扎浮置扩散二极管的图像传感器
US6232626B1 (en) Trench photosensor for a CMOS imager
US6310366B1 (en) Retrograde well structure for a CMOS imager
US6611037B1 (en) Multi-trench region for accumulation of photo-generated charge in a CMOS imager
US6756616B2 (en) CMOS imager and method of formation
US6723594B2 (en) Pixel cell with high storage capacitance for a CMOS imager
US7557335B2 (en) CMOS image sensor with photo diode gate
US7755119B2 (en) Method and apparatus for reducing imager floating diffusion leakage
US20090032685A1 (en) Trench photosensor for a CMOS imager
US20060181622A1 (en) 4T CMOS image sensor with floating diffusion gate capacitor
US6686220B2 (en) Retrograde well structure for a CMOS imager
US7037764B2 (en) Method of forming a contact in a pixel cell

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: APTINA DIGITAL IMAGING HOLDINGS INC.

Free format text: FORMER OWNER: MICROMETER TECHNOLOGY CO., LTD.

Effective date: 20100525

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: IDAHO, U.S.A. TO: CAYMAN ISLANDS

TA01 Transfer of patent application right

Effective date of registration: 20100525

Address after: Cayman Islands

Applicant after: Micron Technology Inc.

Address before: Idaho

Applicant before: Micron Technology, INC.

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20090617