CN101593784B - 光半导体装置 - Google Patents

光半导体装置 Download PDF

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Publication number
CN101593784B
CN101593784B CN2009100081690A CN200910008169A CN101593784B CN 101593784 B CN101593784 B CN 101593784B CN 2009100081690 A CN2009100081690 A CN 2009100081690A CN 200910008169 A CN200910008169 A CN 200910008169A CN 101593784 B CN101593784 B CN 101593784B
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China
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layer
optical
type
semiconductor
wavelength
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CN2009100081690A
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English (en)
Chinese (zh)
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CN101593784A (zh
Inventor
石村荣太郎
中路雅晴
柳生荣治
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Lasers (AREA)
CN2009100081690A 2008-05-26 2009-03-09 光半导体装置 Active CN101593784B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-136918 2008-05-26
JP2008136918A JP5262293B2 (ja) 2008-05-26 2008-05-26 光半導体装置
JP2008136918 2008-05-26

Publications (2)

Publication Number Publication Date
CN101593784A CN101593784A (zh) 2009-12-02
CN101593784B true CN101593784B (zh) 2012-01-11

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Family Applications (1)

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CN2009100081690A Active CN101593784B (zh) 2008-05-26 2009-03-09 光半导体装置

Country Status (3)

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US (1) US7928472B2 (2)
JP (1) JP5262293B2 (2)
CN (1) CN101593784B (2)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5444994B2 (ja) * 2009-09-25 2014-03-19 三菱電機株式会社 半導体受光素子
KR101028314B1 (ko) * 2010-01-29 2011-04-12 엘지이노텍 주식회사 발광 소자 및 그 제조방법
JP2011258809A (ja) * 2010-06-10 2011-12-22 Mitsubishi Electric Corp 半導体受光素子
JP2012174977A (ja) * 2011-02-23 2012-09-10 Sumitomo Electric Ind Ltd 受光素子およびその製造方法
JP6035921B2 (ja) * 2012-07-10 2016-11-30 富士通株式会社 光検出器およびその製造方法
JP5918706B2 (ja) * 2013-02-21 2016-05-18 日本電信電話株式会社 長波長帯面発光レーザ
US9876127B2 (en) 2013-11-22 2018-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. Backside-illuminated photodetector structure and method of making the same
WO2018078788A1 (ja) * 2016-10-28 2018-05-03 三菱電機株式会社 裏面入射型受光素子及び光モジュール
CN109461778A (zh) * 2018-10-31 2019-03-12 中国电子科技集团公司第四十四研究所 一种提高背照式光电二极管响应度的结构及制作方法
JP7044048B2 (ja) * 2018-12-19 2022-03-30 日本電信電話株式会社 アバランシェフォトダイオードおよびその製造方法
JP2021114594A (ja) * 2019-08-27 2021-08-05 株式会社東芝 光半導体素子
CN114792738B (zh) * 2021-01-26 2025-04-18 朗美通日本株式会社 半导体光接收元件
CN118738032B (zh) * 2024-09-04 2024-12-10 芯思杰技术(深圳)股份有限公司 光电探测芯片、距离传感器及电子设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62282469A (ja) * 1986-05-30 1987-12-08 Nec Corp 半導体受光素子
JPS639163A (ja) * 1986-06-30 1988-01-14 Nec Corp 半導体受光素子
JPH0821727B2 (ja) * 1988-11-18 1996-03-04 日本電気株式会社 アバランシェフォトダイオード
US5212703A (en) 1992-02-18 1993-05-18 Eastman Kodak Company Surface emitting lasers with low resistance bragg reflectors
JP3544352B2 (ja) * 2000-10-30 2004-07-21 日本電気株式会社 半導体受光素子
JP2004327886A (ja) * 2003-04-28 2004-11-18 Nippon Sheet Glass Co Ltd 半導体受光素子
JP2005019599A (ja) 2003-06-25 2005-01-20 Seiko Epson Corp 光素子およびその製造方法、光モジュール、光伝達装置
JP4611066B2 (ja) * 2004-04-13 2011-01-12 三菱電機株式会社 アバランシェフォトダイオード
US7372886B2 (en) 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
CN100557826C (zh) * 2004-10-25 2009-11-04 三菱电机株式会社 雪崩光电二极管
JP2006253548A (ja) * 2005-03-14 2006-09-21 Mitsubishi Electric Corp 半導体受光素子
JP4985954B2 (ja) * 2006-06-27 2012-07-25 セイコーエプソン株式会社 面発光型半導体レーザ
JP4300245B2 (ja) * 2006-08-25 2009-07-22 キヤノン株式会社 多層膜反射鏡を備えた光学素子、面発光レーザ
JP4985298B2 (ja) 2007-10-10 2012-07-25 三菱電機株式会社 アバランシェフォトダイオード

Also Published As

Publication number Publication date
US20090289316A1 (en) 2009-11-26
US7928472B2 (en) 2011-04-19
CN101593784A (zh) 2009-12-02
JP2009283854A (ja) 2009-12-03
JP5262293B2 (ja) 2013-08-14

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