CN101719528A - Method for optical control preparation of silicon film solar batteries on glass substrate and settling chamber - Google Patents
Method for optical control preparation of silicon film solar batteries on glass substrate and settling chamber Download PDFInfo
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- CN101719528A CN101719528A CN200910172569A CN200910172569A CN101719528A CN 101719528 A CN101719528 A CN 101719528A CN 200910172569 A CN200910172569 A CN 200910172569A CN 200910172569 A CN200910172569 A CN 200910172569A CN 101719528 A CN101719528 A CN 101719528A
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- film solar
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- 239000011521 glass Substances 0.000 title claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 46
- 239000010703 silicon Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 230000003287 optical effect Effects 0.000 title claims abstract description 14
- 238000005286 illumination Methods 0.000 claims abstract description 24
- 238000000137 annealing Methods 0.000 claims abstract description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 5
- 229920005591 polysilicon Polymers 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims abstract description 3
- 239000000428 dust Substances 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000007664 blowing Methods 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 abstract description 10
- 230000008025 crystallization Effects 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 230000007423 decrease Effects 0.000 abstract description 2
- 210000002381 plasma Anatomy 0.000 abstract 1
- 239000010409 thin film Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The invention discloses a method for the optical control preparation of silicon film solar batteries on a glass substrate and a settling chamber suitable for the method. The method comprises the following steps of: settling a silicon film in the settling chamber by using transparent conductive oxide (TCO) glass with texture as a substrate; illuminating with light of a needed frequency; and settling sequentially using plasmas reaction to prepare stable and uniform silicon film solar batteries of p, i, n layers, wherein the frequency of light is 1012-1017Hz, and the illumination time annealing is 2-20 minutes. Photon of different frequencies have different energies, generate polysilicon films of different properties; the settling step and the illumination step can be once finished the settling and the illumination annealing in the settling chamber and alternately carried out many times as required. The preparation method greatly lowers the process complexity and decreases the production cost, hardly separates the glass and the silicon films, and improves the crystallization effect of the silicon films and the efficiency and the stability of the silicon film batteries thereof.
Description
Technical field
The invention belongs to field of photoelectric technology, relate to a kind of method that on glass substrate, prepares the thin solar cell of silicon.
Background technology
The preparation silicon film solar batteries is the developing direction of following solar cell potentialization on glass substrate, glass has good light transmission, with low cost, has certain intensity, can anti-certain high temperature, and be a kind of construction material, preparation silicon film solar batteries great commercial value on the glass substrate of cheapness.The silicon thin film that preparation needs is the key of making thin-film solar cells, silicon film solar batteries is divided into non-crystal silicon solar cell, microcrystalline silicon solar cell and multi-crystal silicon film solar battery, because the restriction that the simple glass strain point is low, so use plasma chemical reactive vapour deposition (PlasmaEnhance Chemical Vapor Deposition CVD) amorphous silicon membrane usually, prepare amorphous silicon thin-film solar cell then, amorphous silicon thin-film solar cell is business-like the earliest hull cell, after amorphous silicon is introduced a large amount of hydrogen (10%), energy gap is elevated to 1.7eV from 1.1eV, and very strong light absorption is arranged.But, amorphous silicon battery is during for a long time by rayed, battery efficiency can descend significantly, so-called photic decline (S-W) effect that Here it is, this is the subject matter that the amorphous silicon membrane battery runs into, so, people by conventional resistance furnace heat, methods such as aluminium is induced, laser scanning again crystallization do polycrystalline silicon thin film solar cell.Preparing silicon thin film method commonly used is at first to use plasma chemical reactive vapour deposition amorphous silicon membrane, secondary crystallization then.By the height division of crystallization treatment temperature again, be divided three classes at present: low temperature process, middle temperature technology and high-temperature technology.Low temperature is meant that the treatment temperature of cell preparation process is below 550 ℃.The substrate of suitable this class battery has glass, stainless steel and plastics etc. usually, prepares crystallite dimension by direct sedimentation and is only receiving the thin film solar cell of brilliant scope (tens about nm).Its great advantage is exactly that the heat energy that drops into is few, can utilize cheapness, transparent, be easy to large-area preparation.Middle temperature is meant that the treatment temperature of cell preparation process is at 550-1000 ℃.Utilize PECVD method low temperature depositing silicon thin film on can the substrates such as glass of anti-higher temperature earlier, warm crystallization process (550-1000 ℃) increases crystal grain in adopting then, the preparation hull cell.High temperature is meant that the treatment temperature of cell preparation process is more than 1000 ℃.In general, high-temperature technology is prepared oarse-grained silicon thin film easily, still, is difficult at present find at the bottom of a kind of free of contamination high temperature-resistant liner of cheapness, and power consumption is high in addition, cost high (such as using laser crystallization); With regard to low temperature process, the silicon thin film crystal grain of using the PECVD method directly to deposit is less, defective is more, photoelectric properties are relatively poor.In a word, with plasma chemical reactive vapour deposition amorphous silicon membrane, secondary crystallization prepares that silicon-film solar-cell need deposit in the settling chamber, secondary crystallization is finished step by step then, complex process, commercial Application cost height.In addition, in amorphous silicon membrane annealing preparation polysilicon membrane process, silicon thin film and glass substrate often take place tangible segregation phenomenon.
Summary of the invention
Be to solve the above-mentioned defective that prior art exists, the object of the present invention is to provide a kind of on glass substrate photocontrol be equipped with the method for silicon film solar batteries.This preparation method reduces process complexity and production cost greatly, and glass and silicon fiml are not easily separated, improves the crystallization effect of silicon thin film and the efficient and the stability of silicon thin-film battery thereof.
For achieving the above object, the technical solution used in the present invention is: photocontrol is equipped with the method for silicon film solar batteries on this glass substrate, it is characterized in that it being to be prepared from by following step: 1, the glass of the nesa coating that has texture that cleans with standard technology is substrate; 2, the glass substrate that will clean places the settling chamber, with the illumination of required frequency, and successively with the plasma reaction deposition, preparation stabilized uniform p, i, n layer silicon film solar batteries, light frequency condition: 10
12-10
17Hz; Illumination annealing time 2-70 minute, the photon energy difference of different frequencies produces polysilicon membrane of different nature, naturally cools to room temperature under vacuum state;
3, take out then, and then evaporation metal electrode aluminium, battery electrode is drawn from nesa coating and aluminium, so just the thin solar cell of preparation silicon on glass substrate.
The step of further described deposition and illumination can deposit in the settling chamber, illumination annealing is once finished.
The step of described deposition and illumination can deposit in the settling chamber as required, illumination annealing is alternately repeatedly carried out.
Maximum temperature in the described illumination annealing in process process should be higher than the glass softening point temperature a little, can make glass softening like this, adapts because of the variation that produces in the processing procedure with silicon fiml.
Described settling chamber is provided with optical window, and light source is installed in the outside of settling chamber's optical window, and the light that light source sends is transmitted on this settling chamber's substrate by optical window.
Described optical window is a quartz glass, does not influence the transmission of light.
Described settling chamber is provided with and can wipes sedimental dust cleaning apparatus on settling chamber's inwall quartz glass.
Described dust cleaning apparatus has mechanical arm, the dust blowing brush that the end of mechanical arm is connected with.
Described dust cleaning apparatus has pole hinged in the settling chamber, and the pole end is connected with dust blowing brush, is provided with magnetic driver on the outer wall of the settling chamber of pole correspondence, by the reciprocating motion of magnetic driver control pole.
Adopt the beneficial effect of technique scheme: the inventive method is compared with conventional method, use help crystallization, can control frequency rayed, can improve the crystallization effect of silicon thin film, the efficient and the stability of raising silicon thin-film battery on the one hand; On the other hand because removed the light of other unnecessary frequencies in traditional illumination method, thus the deposition indoor temperature reduced, thus can use cheap low softening point glass, reduce production costs; Photo-annealing and PECVD method depositing silicon film be indoor finishing in addition, thereby make technology simple.The softening point temperature of glass substrate is suitable with the illumination annealing temperature, the softening point temperature of glass is complementary with the highest annealing temperature point, maximum temperature in the processing procedure should be higher than the glass softening point temperature a little, can make glass softening like this, adapt because of the variation that produces in the processing procedure with silicon fiml, just can form an integral body so in process of production, the phenomenon that glass and silicon fiml are separated not occur.The settling chamber is provided with and can wipes sedimental dust-scraping device on settling chamber's inwall quartz glass, has guaranteed light-struck stability.In a word, this method makes the simple and production cost reduction of preparation silicon film solar batteries technology.
Description of drawings
Below in conjunction with accompanying drawing specific embodiments of the invention are described in further detail.
Fig. 1 is the used settling chamber's structural representation of the inventive method.
Embodiment
Embodiment
The present invention prepares the thin solar cell of silicon on glass substrate method is to be prepared from by following step:
1, the glass of the nesa coating that has texture that cleans with standard technology is substrate, and concrete steps are as follows: (1) is at first cleaned glass with washing agent, and with ultrasonic waves for cleaning 5 minutes; (2) deionized water cleans up washing agent, cleans with acetone again, equally also uses ultrasonic waves for cleaning 5 minutes, removes greasy dirt; (3) with deionized water acetone is cleaned up, use alcohol wash again, equally also used ultrasonic waves for cleaning 5 minutes; (4) with deionized water that alcohol wash is clean, used ultrasonic waves for cleaning again 5 minutes; (5) be soaked in the deionized water, pick up a jiao of glass, vertically slowly pull out the water surface, whether even moisture film is arranged on the sight glass, then oven dry is arranged, do not have and then repeat above-mentioned four steps with clean tweezers; (6) glass of drying is placed put into culture dish on the clean filter paper and add a cover preservation.
2, the glass substrate that will clean places the settling chamber, and radio frequency glow discharge decomposes source of the gas phosphine, silane and borine successively, feeds hydrogen simultaneously, preparation deposits p type, i type, three layers of silicon thin film of n type on glass substrate successively, vacuum degree 5.6 * 10-4Pa, hydrogen thinner ratio 95%, electrode spacing 2cm in the settling chamber, operating air pressure 133.3Pa, discharge power is 60W, and underlayer temperature is 300 ℃, and sedimentation time was followed successively by 7 minutes, 70 minutes and 20 minutes, simultaneously, be 1.2 * 10 with frequency
14Hz and 2 * 10
15The Hz irradiation, the step of deposition and illumination can deposit in the settling chamber, illumination annealing is once finished, and the step of described deposition and illumination can deposit in the settling chamber as required, illumination annealing is alternately repeatedly carried out.The softening point temperature of glass substrate is suitable with the illumination annealing temperature, the softening point temperature of glass is complementary with the highest annealing temperature point, maximum temperature in the processing procedure should be higher than the glass softening point temperature a little, can make glass softening like this, adapt because of the variation that produces in the processing procedure with silicon fiml, just can form an integral body so in process of production, the phenomenon that glass and silicon fiml are separated not occur.Under vacuum state, naturally cool to room temperature, take out then, and then evaporation metal electrode aluminium (Al).Battery electrode is drawn from nesa coating and aluminium, and so just preparation silicon approaches solar cell on glass substrate, and its structure can be expressed as glass/TCO/pin/Al.
The used settling chamber of the present invention has settling chamber's housing 1 as described in Figure 1, is provided with optical window 3 on housing 1, and light source 2 is installed in the outside of settling chamber's optical window, and the light that light source sends is transmitted on this settling chamber's substrate by optical window.Optical window 3 is silica glass materials, does not influence the transmission of light.Can wipe sedimental dust cleaning apparatus 4 on settling chamber's inwall quartz glass being provided with in the settling chamber, dust cleaning apparatus has mechanical arm, the dust blowing brush that the end of mechanical arm is connected with, by the reciprocating motion of drive mechanism mechanical arm, thereby drive the dust blowing brushing except that the long-pending thing on settling chamber's inwall quartz glass, do not influence the transmission of light.Dust cleaning apparatus 4 can also be the pole hinged in the settling chamber, the pole end is connected with the dust blowing brush, on the outer wall of the settling chamber of pole correspondence, be provided with magnetic driver,, thereby make the dust blowing brushing remove deposit on settling chamber's inwall quartz glass by the reciprocating motion of magnetic driver control pole.
Claims (9)
1. photocontrol is equipped with the method for silicon film solar batteries on the glass substrate, it is characterized in that it being to be prepared from by following step:
(1), the glass of the nesa coating that has texture that cleans with standard technology is substrate;
(2), the glass substrate that will clean places the settling chamber, with the illumination of required frequency, successively with the plasma reaction deposition, preparation stabilized uniform p, i, n layer silicon film solar batteries, light frequency condition: 10
12-10
17Hz; Illumination annealing time 2-70 minute, the photon energy difference of different frequencies produces polysilicon membrane of different nature, naturally cools to room temperature under vacuum state;
(3), then take out, and then evaporation metal electrode aluminium, battery electrode is drawn from nesa coating and aluminium, so just prepares silicon and approach solar cell on glass substrate.
2. photocontrol is equipped with the method for silicon film solar batteries on the glass substrate according to claim 1, it is characterized in that: the step of described deposition and illumination can deposit in the settling chamber, illumination annealing is once finished.
3. photocontrol is equipped with the method for silicon film solar batteries on the glass substrate according to claim 1, it is characterized in that: the step of described deposition and illumination can deposit in the settling chamber as required, illumination annealing is alternately repeatedly carried out.
4. photocontrol is equipped with the method for silicon film solar batteries on the glass substrate according to claim 1, it is characterized in that: the maximum temperature in the described illumination annealing in process process should be higher than the glass softening point temperature a little, can make glass softening like this, adapt because of the variation that produces in the processing procedure with silicon fiml.
5. a settling chamber that is used for the described method of claim 1 has housing, it is characterized in that: the housing of described settling chamber is provided with optical window, and light source is installed in the outside of settling chamber's optical window, and the light that light source sends is transmitted on this settling chamber's substrate by optical window.
6. settling chamber according to claim 5 is characterized in that: described optical window is a quartz glass, does not influence the transmission of light.
7. settling chamber according to claim 5 is characterized in that: described settling chamber is provided with and can wipes sedimental dust cleaning apparatus on settling chamber's inwall quartz glass.
8. settling chamber according to claim 7 is characterized in that: described dust cleaning apparatus has mechanical arm, the dust blowing brush that the end of mechanical arm is connected with.
9. settling chamber according to claim 7, it is characterized in that: described dust cleaning apparatus has pole hinged in the settling chamber, the pole end is connected with dust blowing brush, is provided with magnetic driver on the outer wall of the settling chamber of pole correspondence, by the reciprocating motion of magnetic driver control pole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101725695A CN101719528B (en) | 2009-11-16 | 2009-11-16 | Method for optical control preparation of silicon film solar batteries on glass substrate and settling chamber |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101725695A CN101719528B (en) | 2009-11-16 | 2009-11-16 | Method for optical control preparation of silicon film solar batteries on glass substrate and settling chamber |
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| Publication Number | Publication Date |
|---|---|
| CN101719528A true CN101719528A (en) | 2010-06-02 |
| CN101719528B CN101719528B (en) | 2012-01-04 |
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102102192A (en) * | 2010-11-19 | 2011-06-22 | 河南安彩高科股份有限公司 | Method for promoting crystallization of silicon film on glass substrate by using light with specific wavelength |
| CN102496663A (en) * | 2011-12-29 | 2012-06-13 | 普乐新能源（蚌埠）有限公司 | Method for reducing attenuation rate of amorphous silicon solar cell |
| CN102637780A (en) * | 2012-04-27 | 2012-08-15 | 保定天威薄膜光伏有限公司 | Preparation method for improving performance of industrial silicon thin-film cell component |
-
2009
- 2009-11-16 CN CN2009101725695A patent/CN101719528B/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102102192A (en) * | 2010-11-19 | 2011-06-22 | 河南安彩高科股份有限公司 | Method for promoting crystallization of silicon film on glass substrate by using light with specific wavelength |
| CN102496663A (en) * | 2011-12-29 | 2012-06-13 | 普乐新能源（蚌埠）有限公司 | Method for reducing attenuation rate of amorphous silicon solar cell |
| CN102637780A (en) * | 2012-04-27 | 2012-08-15 | 保定天威薄膜光伏有限公司 | Preparation method for improving performance of industrial silicon thin-film cell component |
| CN102637780B (en) * | 2012-04-27 | 2014-04-02 | 保定天威薄膜光伏有限公司 | Preparation method for improving performance of industrial silicon thin-film cell component |
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| Publication number | Publication date |
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| CN101719528B (en) | 2012-01-04 |
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Inventor after: Jin Ruimin Inventor after: Chen Lanli Inventor after: Luo Penghui Inventor after: Wang Shengzhao Inventor after: Hu Ruihua Inventor before: Jin Ruimin Inventor before: Li Dingzhen Inventor before: Wang Yucang Inventor before: Guo Xinfeng |
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Free format text: CORRECT: INVENTOR; FROM: JIN RUIMIN LI DINGZHEN WANG YUCANG GUO XINFENG TO: JIN RUIMIN CHEN LANLI LUO PENGHUI WANG SHENGZHAO HU RUIHUA |
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