CN101771107A - Method for producing solar thin-film cell and solar thin-film cell - Google Patents
Method for producing solar thin-film cell and solar thin-film cell Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000000034 method Methods 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000011358 absorbing material Substances 0.000 claims abstract description 26
- 238000007639 printing Methods 0.000 claims abstract description 7
- 230000031700 light absorption Effects 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 21
- 238000000059 patterning Methods 0.000 claims description 20
- 125000006850 spacer group Chemical group 0.000 claims description 15
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 12
- 238000003698 laser cutting Methods 0.000 claims description 10
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 6
- 238000007641 inkjet printing Methods 0.000 claims description 6
- 239000011669 selenium Substances 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- -1 copper indium gallium sulfide selenide Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 35
- 239000011248 coating agent Substances 0.000 description 26
- 238000000576 coating method Methods 0.000 description 26
- 238000005516 engineering process Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 17
- 239000004020 conductor Substances 0.000 description 11
- 239000011787 zinc oxide Substances 0.000 description 9
- 239000005083 Zinc sulfide Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- IGUXCTSQIGAGSV-UHFFFAOYSA-K indium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[In+3] IGUXCTSQIGAGSV-UHFFFAOYSA-K 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 5
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- ZQRRBZZVXPVWRB-UHFFFAOYSA-N [S].[Se] Chemical compound [S].[Se] ZQRRBZZVXPVWRB-UHFFFAOYSA-N 0.000 description 3
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- ZYQNKFKPTUYGMQ-UHFFFAOYSA-N [In]=[Se].[Zn] Chemical compound [In]=[Se].[Zn] ZYQNKFKPTUYGMQ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000003208 petroleum Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 2
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 description 2
- 229910021511 zinc hydroxide Inorganic materials 0.000 description 2
- 229940007718 zinc hydroxide Drugs 0.000 description 2
- SZKTYYIADWRVSA-UHFFFAOYSA-N zinc manganese(2+) oxygen(2-) Chemical compound [O--].[O--].[Mn++].[Zn++] SZKTYYIADWRVSA-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明公开了一种制作太阳能薄膜电池的方法及太阳能薄膜电池，该方法包括下列步骤。提供一基板，并于基板上形成多个第一电极。进行一印刷工艺，将一光吸收材料印刷于基板与第一电极上，以形成多个光吸收图案，其中各光吸收图案分别对应两相邻的第一电极，且各光吸收图案部分覆盖对应的两相邻的第一电极，并部分曝露出对应的两相邻的第一电极。于光吸收图案上形成多个第二电极。
The invention discloses a method for making a solar thin film battery and the solar thin film battery. The method includes the following steps. A substrate is provided, and a plurality of first electrodes are formed on the substrate. A printing process is performed to print a light-absorbing material on the substrate and the first electrodes to form a plurality of light-absorbing patterns, wherein each light-absorbing pattern corresponds to two adjacent first electrodes, and each light-absorbing pattern partially covers the corresponding two adjacent first electrodes, and partially expose the corresponding two adjacent first electrodes. A plurality of second electrodes are formed on the light absorbing pattern.
Description
Technical field
The present invention relates to a kind of method and structure thereof of making solar film battery, relate in particular to a kind of method and structure thereof of utilizing typography to form the light absorption pattern of solar film battery.
Background technology
The at present human energy that uses mainly comes from petroleum resources, but because earth petroleum resources are limited, therefore grow with each passing day for the demand of alternative energy source in recent years, and wherein in various alternative energy source with the tool development potentiality of solar energy.
At present, the technology of solar cell mainly can be divided into solar cell that uses semiconductor technology and the solar cell two big classes of using thin-film technique, wherein the former is to use for example silicon substrate of semiconductor substrate, and utilize technology such as doping and diffusion to form light absorbing zone, the latter then is to use plastic base or glass substrate, and utilizes thin film technique to form light absorbing zone.Because semiconductor industry for the high demand of silicon raw material, makes the solar cell that uses semiconductor technology face the situation of silicon insufficient raw material, therefore utilize the solar film battery of thin film technique to become main product on the market gradually at present.
The light absorbing zone of existing solar film battery is to be formed by depositing operation, and utilize the gold-tinted lithography process to carry out patterning, yet, the cost costliness of gold-tinted lithography process, cause the cost of manufacture of existing solar film battery to descend, therefore, the development for solar film battery has caused negative effect.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method and solar film battery of making solar film battery, to save the cost of manufacture of solar film battery.
Preferred embodiment of the present invention provides a kind of method of making solar film battery, comprises the following steps.One substrate is provided, and on substrate, forms a plurality of first electrodes.Carry out a typography, one light absorbing material is printed on the substrate and first electrode, to form a plurality of light absorption patterns, wherein each light absorption pattern is distinguished the corresponding two first adjacent electrodes, and each light absorption pattern partly covers the corresponding two first adjacent electrodes, and part exposes the corresponding two first adjacent electrodes.On light absorption pattern, form a plurality of second electrodes.
Wherein, this typography comprises an ink-jet printing process or a screen printing process.
Wherein, other is included in and forms before this second electrode, forms a resilient coating on this light absorption pattern, and this first electrode electric connection that exposes of this resilient coating and this light absorption pattern.
Wherein, the step that forms this second electrode comprises: form a transparency conducting layer on this resilient coating; And this transparency conducting layer of patterning, this resilient coating and this light absorption pattern are to form this second electrode.
Wherein, this step of carrying out this typography comprises that the more a plurality of spacer structures of formation are on this first electrode.
Wherein, respectively this spacer structure is connected with this light absorption pattern between this adjacent light absorption pattern and not.
Wherein, this resilient coating is covered on this spacer structure in addition.
Wherein, this step that forms this second electrode comprises: form a transparency conducting layer on this resilient coating; And this transparency conducting layer of patterning is to form this second electrode.
Wherein, the step of this this transparency conducting layer of patterning comprises and carries out a laser cutting parameter with this transparency conducting layer of patterning.
Wherein, this step that forms this first electrode comprises: form an opaque conductive layer on this substrate; And this opaque conductive layer of patterning is to form this first electrode.
Wherein, this light absorbing material comprises an I B-III A-VI A compound semiconductor or an II B-VIA compound semiconductor.
Wherein, this I B-III A-VI A compound semiconductor comprises Copper Indium Gallium Selenide, copper indium diselenide, copper indium gallium sulphur selenium or copper gallium selenium.
Wherein, this II B-VI A compound semiconductor comprises cadmium telluride.
Wherein, this step that forms this first electrode comprises: form a transparency conducting layer on this substrate; And this transparency conducting layer of patterning is to form this first electrode.
Wherein, this step that forms this second electrode comprises: form another transparency conducting layer and a non-transparent conductive layer in regular turn on this first electrode that this light absorption pattern and this light absorption pattern expose; And this non-transparent conductive layer of patterning and this another transparency conducting layer, to form this second electrode.
Wherein, this light absorbing material comprises amorphous silicon.
Wherein, this light absorbing material comprises the light absorbing material based on solution.
Preferred embodiment of the present invention provides a kind of solar film battery in addition.Above-mentioned solar film battery comprises a substrate, a plurality of first electrode, a plurality of light absorption pattern, a resilient coating and a plurality of second electrode.First electrode is arranged on the substrate.Light absorption pattern is arranged on the substrate and first electrode, and wherein each light absorption pattern corresponding two adjacent first electrodes respectively, and each light absorption pattern partly cover the corresponding two first adjacent electrodes, and part exposes the corresponding two first adjacent electrodes.Resilient coating is arranged on the light absorption pattern, and first electrode that resilient coating and light absorption pattern expose electrically connects.Second electrode is arranged on the resilient coating.
Wherein, other comprises a plurality of spacer structures, be arranged at respectively respectively on this first electrode, and this spacer structure is covered by this resilient coating.
The method of making solar film battery of the present invention utilizes typography to form light absorption pattern, so use yellow photolithographic techniques to form the mode of light absorption pattern compared to prior art, can significantly save cost of manufacture.
Description of drawings
Fig. 1 to Fig. 6 has illustrated the method schematic diagram that solar film battery is made in first preferred embodiment of the present invention;
Fig. 7 to Figure 12 has illustrated the method schematic diagram that solar film battery is made in second preferred embodiment of the present invention;
Figure 13 to Figure 18 has illustrated the method schematic diagram that solar film battery is made in the 3rd preferred embodiment of the present invention.
Wherein, Reference numeral:
10: substrate 12: conductive layer
18: resilient coating 20: transparency conducting layer
Electrode 24 in 22: the second: the solar film battery unit
30: substrate 32: conductive layer
37: spacer structure 38: resilient coating
40: 42: the second electrodes of transparency conducting layer
44: solar film battery unit 50: substrate
52: 54: the first electrodes of transparency conducting layer
56: light absorption pattern 58: transparency conducting layer
60: 62: the second electrodes of non-transparent conductive layer
64: the solar film battery unit
Embodiment
For making those skilled in the art can further understand the present invention, hereinafter the spy enumerates preferred embodiment of the present invention, and cooperate appended graphic, describe in detail constitution content of the present invention and the effect desiring to reach.
Please refer to Fig. 1 to Fig. 6.Fig. 1 to Fig. 6 has illustrated the method schematic diagram that solar film battery is made in first preferred embodiment of the present invention.As shown in Figure 1, at first provide a substrate 10.Substrate 10 can be the substrate that plastic base, glass substrate or other various material constitute.On substrate 10, form a conductive layer 12 subsequently.Conductive layer 12 can be the good material of various conductivity, as metal material or transparent conductive material.In the present embodiment, the irradiation face of solar film battery is the top of Fig. 1, so conductive layer 12 selects the metal material with conduction and reflection double grading for use, molybdenum for example, but not as limit.
As shown in Figure 2, then conductive layer 12 is carried out patterning, on substrate 10, to form a plurality of first electrodes 14.In the present embodiment, the preferable laser cutting parameter that utilizes of the step of patterning first electrode 14 is realized, but not as limit, for example also can be utilized machine cuts technology or yellow photolithographic techniques to be realized.
As shown in Figure 3, carry out printing (printing) technology subsequently, one light absorbing material is printed on the substrate 10 and first electrode 14, to form a plurality of light absorption patterns 16, wherein each light absorption pattern 16 is distinguished corresponding first electrode 14 substantially, and each light absorption pattern 16 exposes first electrode 14 of part correspondence.Speak by the book, each light absorption pattern 16 part substantially is covered in two corresponding adjacent first electrodes 14, and partly exposes two corresponding adjacent first electrodes 14, and covers the substrate 10 between two adjacent first electrodes 14 fully.Typography of the present invention can be the typography of ink jet printing (ink-jet printing) technology, screen painting (screen printing) technology or other pattern.In the present embodiment, light absorbing material comprises the light absorbing material based on solution (solution-based), but not as limit.For example, light absorbing material can comprise for example I B-III A-VI A family (one three six family) compound semiconductor (compound semiconductor), II B-VI A family (two or six family) compound semiconductor or other light absorbing material.If select I B-III A-VI A compound semiconductor for use, then it can comprise the combination of for example Copper Indium Gallium Selenide (CIGS), copper indium diselenide (CIS), copper indium gallium sulphur selenium (CIGSSe) or copper gallium selenium (CGS) or other I B-IIIA-VI A compound semiconductor or above-mentioned material; If select II B-VI A compound semiconductor for use, then it can comprise the combination of cadmium telluride (CdTe) for example or other II B-VI A compound semiconductor or above-mentioned material.
As shown in Figure 4, then in forming a resilient coating 18 on 16 on the light absorption pattern, and resilient coating 18 contacts with first electrode 14 that light absorption pattern 16 exposes and electrically connects.The material of resilient coating 18 can comprise for example cadmium sulfide (CdS), zinc sulphide (ZnS), Zn (O, OH, S), indium trisulfide (In2S3), mixture (In (the O that comprises indium oxide and indium hydroxide and indium sulfide, OH, S)), zinc oxide (ZnS), zinc selenide (ZnSe), mixture (Zn (the O that comprises zinc oxide and zinc hydroxide and zinc sulphide, OH, S)), zinc-manganese oxide (ZnMgO), three selenizings, two indiums (In2Se3), mixture (In (the O that comprises indium oxide and indium hydroxide and indium selenide, OH, Se)), indium hydroxide (In (OH) 3), zinc indium selenium (ZnInSe), tin ash (SnO) or stannic disulfide (SnS2), or other padded coaming, or the combination of above-mentioned material.
As shown in Figure 5, on resilient coating 18, form a transparency conducting layer 20 subsequently.In the present embodiment, transparency conducting layer 20 can be the good transparent conductive material of various conductivity, for example unadulterated zinc oxide (i-ZnO), aluminum zinc oxide (AZO) or other transparent conductive material, or the combination of above-mentioned material.
As shown in Figure 6, follow patterned transparent conductive layer 20, to form a plurality of second electrodes 22.In the present embodiment, preferable machine cuts technology or the laser cutting parameter of utilizing of the step of patterned transparent conductive layer 20 realized, and can utilize machine cuts technology or laser cutting parameter to cut resilient coating 18 and light absorption pattern 16 in the lump, form the solar film battery unit 24 of a plurality of series connection whereby.Method of the present invention is not as limit, for example also can utilize yellow photolithographic techniques patterned transparent conductive layer 20 to form second electrode 22, and utilize second electrode 22 further to remove the resilient coating 18 and light absorption pattern 16 that is not covered by second electrode 22 with etching mode as shielding, form the solar film battery unit 24 of series connection whereby.
Please refer to Fig. 7 to Figure 12.Fig. 7 to Figure 12 has illustrated the method schematic diagram that solar film battery is made in second preferred embodiment of the present invention.As shown in Figure 7, at first provide a substrate 30.Substrate 30 can be the substrate that plastic base, glass substrate or other various material constitute.On substrate 30, form a conductive layer 32 subsequently.Conductive layer 32 can be the good material of various conductivity, as metal material or transparent conductive material.In the present embodiment, the irradiation face of solar film battery is the top of Fig. 7, and therefore, conductive layer 32 is selected the metal material with conduction and reflection double grading for use, molybdenum for example, but not as limit.
As shown in Figure 8, then conductive layer 32 is carried out patterning, on substrate 30, to form a plurality of first electrodes 34.In the present embodiment, the preferable laser cutting parameter that utilizes of the step of patterning first electrode 34 is realized, but not as limit, for example also can be utilized machine cuts technology or yellow photolithographic techniques to be realized.
As shown in Figure 9, carry out a typography subsequently, a light absorbing material be printed on the substrate 30 and first electrode 34, with form a plurality of light absorption patterns 36 and a plurality of not with between light absorption pattern 36 is connected every structure 37.Each light absorption pattern 36 is corresponding first electrode 34 respectively, and each light absorption pattern 36 exposes first electrode 34 of part correspondence.Speak by the book, each light absorption pattern 36 part substantially is covered in two corresponding adjacent first electrodes 34, and partly exposes two adjacent first electrodes 34, and covers the substrate 30 between two adjacent first electrodes 34 fully.In addition, each spacer structure 37 is on first electrode 34 between the adjacent light absorption pattern 36 and be not connected with light absorption pattern 36.Typography of the present invention can be the typography of ink-jet printing process, screen printing process or other pattern.In the present embodiment, light absorbing material comprises the light absorbing material based on solution, but not as limit.For example, light absorbing material can comprise for example I B-III A-VI A compound semiconductor, II B-VI A compound semiconductor or other light absorbing material.If select I B-III A-VI A compound semiconductor for use, then it can comprise the combination of for example Copper Indium Gallium Selenide (CIGS), copper indium diselenide (CIS), copper indium gallium sulphur selenium (CIGSSe) or copper gallium selenium (CGS) or other I B-III A-VI A compound semiconductor or above-mentioned material; If select II B-VI A compound semiconductor for use, then it can comprise the combination of cadmium telluride (CdTe) for example or other II B-VI A compound semiconductor or above-mentioned material.
As shown in figure 10, then on light absorption pattern 36 and spacer structure 37, form a resilient coating 38, wherein resilient coating 38 covers light absorption pattern 36 and spacer structures 37, and resilient coating 38 and light absorption pattern 36 and first electrode 34 that spacer structure 37 exposed contact and electrically connect.The material of resilient coating 38 can comprise for example cadmium sulfide (CdS), zinc sulphide (ZnS), Zn (O, OH, S), indium trisulfide (In2S3), mixture (In (the O that comprises indium oxide and indium hydroxide and indium sulfide, OH, S)), zinc oxide (ZnS), zinc selenide (ZnSe), mixture (Zn (the O that comprises zinc oxide and zinc hydroxide and zinc sulphide, OH, S)), zinc-manganese oxide (ZnMgO), three selenizings, two indiums (In2Se3), mixture (In (the O that comprises indium oxide and indium hydroxide and indium selenide, OH, Se)), indium hydroxide (In (OH) 3), zinc indium selenium (ZnInSe), tin ash (SnO) or stannic disulfide (SnS2), or other padded coaming, or the combination of above-mentioned material.
As shown in figure 11, on resilient coating 38, form a transparency conducting layer 40 subsequently.In the present embodiment, transparency conducting layer 40 can be the good transparent conductive material of various conductivity, for example unadulterated zinc oxide, aluminum zinc oxide or other transparent conductive material, or above-mentioned material combination.
As shown in figure 12, follow patterned transparent conductive layer 40, to form a plurality of second electrodes 42.In the present embodiment, since be provided with between the adjacent light absorption pattern 36 not with between light absorption pattern 36 is connected every structure 37, the method of present embodiment need not removed the resilient coating 38 and light absorption pattern 36 that is not covered by second electrode 42, and can form the solar film battery unit 44 of a plurality of series connection after patterned transparent conductive layer 40.Because the method for present embodiment only needs can form after the patterned transparent conductive layer 40 the solar film battery unit 44 of a plurality of series connection, therefore, can simplify technology, and the preferable laser cutting parameter that utilizes of the step of patterned transparent conductive layer 40 realized, but not as limit.If consider that based on other step of patterned transparent conductive layer 40 also can utilize technologies such as machine cuts technology or yellow photolithographic techniques to be realized.
Please refer to Figure 13 to Figure 18.Figure 13 to Figure 18 has illustrated the method schematic diagram that solar film battery is made in the 3rd preferred embodiment of the present invention.As shown in figure 13, at first provide a substrate 50.Substrate 50 can be the substrate that plastic base, glass substrate or other various material constitute.On substrate 50, form a transparency conducting layer 52 subsequently.In the present embodiment, the irradiation face of solar film battery is the below of Figure 13, therefore, transparency conducting layer 52 can be the good transparent conductive material of various conductivity, for example unadulterated zinc oxide, aluminum zinc oxide or other transparent conductive material, or the combination of above-mentioned material, but not as limit.
As shown in figure 14, then conductive layer 52 is carried out patterning, on substrate 50, to form a plurality of first electrodes 54.In the present embodiment, the preferable laser cutting parameter that utilizes of the step of patterning first electrode 54 is realized, but not as limit, for example also can be utilized machine cuts technology or yellow photolithographic techniques to be realized.
As shown in figure 15, carry out a typography subsequently, one light absorbing material is printed on the substrate 50 and first electrode 54, to form a plurality of light absorption patterns 56, wherein each light absorption pattern 56 is distinguished corresponding first electrode 54 substantially, and each light absorption pattern 56 exposes first electrode 54 of part correspondence.Speak by the book, each light absorption pattern 56 part substantially is covered in two corresponding adjacent first electrodes 54, and partly exposes two corresponding adjacent first electrodes 54, and covers the substrate 50 between two adjacent first electrodes 54 fully.Typography of the present invention can be the typography of ink-jet printing process, screen printing process or other pattern.In the present embodiment, light absorbing material comprises the light absorbing material based on solution, but not as limit.For example, light absorbing material can comprise amorphous silicon, or other semi-conducting material.Using under the situation of amorphous silicon as light absorbing material, the method for present embodiment can form the P-I-N structure by for example diffusion way in light absorbing zone, so do not need to make separately resilient coating.
As shown in figure 16, then on light absorption pattern 56, form another transparency conducting layer 58.Transparency conducting layer 58 can be the good transparent conductive material of various conductivity, for example unadulterated zinc oxide, aluminum zinc oxide or other transparent conductive material, or the combination of above-mentioned material.
As shown in figure 17, on transparency conducting layer 58, form a non-transparent conductive layer 60 subsequently.Non-transparent conductive layer 60 has the double grading of conduction and reflection, and its material can comprise for example aluminum metal, or other has the good nontransparent electric conducting material with highly reflective of conductivity.
As shown in figure 18, follow patterning non-transparent conductive layer 60 and transparency conducting layer 58, to form a plurality of second electrodes 62.In the present embodiment, patterning non-transparent conductive layer 60 is realized with the preferable machine cuts technology or the laser cutting parameter of utilizing of step of transparency conducting layer 58, and can utilize machine cuts technology or laser cutting parameter to cut light absorption pattern 56 in the lump, form the solar film battery unit 64 of a plurality of series connection whereby.Method of the present invention is not as limit, for example also can utilize yellow photolithographic techniques patterning non-transparent conductive layer 60 and transparency conducting layer 58, the light absorption pattern 56 that the step etching of going forward side by side is not covered by second electrode 62 forms the solar film battery unit 64 of connecting whereby.
In sum, the method of making solar film battery of the present invention utilizes typography to form light absorption pattern, so use yellow photolithographic techniques to form the mode of light absorption pattern compared to prior art, can significantly save cost of manufacture and process complexity, help the development of solar film battery.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (19)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100031919A CN101771107B (en) | 2010-01-14 | 2010-01-14 | Method for manufacturing solar thin film cell and solar thin film cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100031919A CN101771107B (en) | 2010-01-14 | 2010-01-14 | Method for manufacturing solar thin film cell and solar thin film cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101771107A true CN101771107A (en) | 2010-07-07 |
| CN101771107B CN101771107B (en) | 2012-05-23 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009101A (en) * | 2014-03-14 | 2014-08-27 | 友达光电股份有限公司 | Solar cell structure |
| CN104350599A (en) * | 2012-05-22 | 2015-02-11 | 克里斯托索尔有限公司 | Method for producing interconnected optoelectronic components, and interconnected optoelectronic components |
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2010
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104350599A (en) * | 2012-05-22 | 2015-02-11 | 克里斯托索尔有限公司 | Method for producing interconnected optoelectronic components, and interconnected optoelectronic components |
| CN104009101A (en) * | 2014-03-14 | 2014-08-27 | 友达光电股份有限公司 | Solar cell structure |
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| CN101771107B (en) | 2012-05-23 |
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