CN101972737A - Spraying process for crucible - Google Patents
Spraying process for crucible Download PDFInfo
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- CN101972737A CN101972737A CN2010102382943A CN201010238294A CN101972737A CN 101972737 A CN101972737 A CN 101972737A CN 2010102382943 A CN2010102382943 A CN 2010102382943A CN 201010238294 A CN201010238294 A CN 201010238294A CN 101972737 A CN101972737 A CN 101972737A
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- crucible
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- 238000005507 spraying Methods 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 239000013078 crystal Substances 0.000 abstract description 11
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000002210 silicon-based material Substances 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 abstract description 3
- 238000005336 cracking Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本发明涉及一种坩埚的喷涂工艺，包括以下步骤：1)在喷涂加热设备的一个底面和四个侧面分别使用独立的加热控制器和限温控制器，调整出不同的升温曲线，保持喷涂过程中坩埚的恒温；2)对坩埚的一个底面和四个侧面使用不同的喷涂工艺，在喷涂的一个循环中，坩埚的底面只喷涂一遍，坩埚的每个侧面均喷涂两遍。本发明结合分析现多晶喷涂设备的差异性，硅料熔化及长晶对涂层的影响，完全改变现国内外的喷涂设备加热方式和喷涂工艺，从根本上解决了长久以来DSS450晶锭合格率低于DSS240，晶锭裂纹比例高于DSS240等问题，同时为硅片开方产能的提高打下了基础。The invention relates to a crucible spraying process, comprising the following steps: 1) using independent heating controllers and temperature limit controllers on one bottom surface and four sides of the spraying heating equipment to adjust different heating curves to maintain the spraying process Constant temperature of the crucible; 2) Use different spraying processes for one bottom surface and four sides of the crucible. In one cycle of spraying, the bottom surface of the crucible is only sprayed once, and each side of the crucible is sprayed twice. The present invention combines the analysis of the difference of existing polycrystalline spraying equipment, the influence of silicon material melting and crystal growth on the coating, completely changes the heating mode and spraying process of the current domestic and foreign spraying equipment, and fundamentally solves the long-standing problem of DSS450 crystal ingots being unqualified. The rate is lower than DSS240, and the proportion of crystal ingot cracks is higher than DSS240. At the same time, it has laid a foundation for the improvement of the production capacity of silicon wafers.
Description
技术领域technical field
本发明涉及一种坩埚的恒温喷涂工艺。The invention relates to a constant temperature spraying process for a crucible.
背景技术Background technique
目前多晶铸锭行业内已全部采购GT Solar DSS450设备，并对原有DSS240进行升级改造。由于热场结构与DSS240不同，DSS450可以装下更多的硅料，从而提高多晶产能、降低多晶成本。就坩埚喷涂方面来讲，DSS450所需坩埚尺寸和质量均大于DSS240，所以目前喷涂设备从根本上有别于DSS240。但是行业内喷涂工艺仍然为原先DSS240的喷涂工艺，这就造成了晶锭合格率低于DSS240，晶锭裂纹比例高于DSS240。At present, all GT Solar DSS450 equipment has been purchased in the polycrystalline ingot industry, and the original DSS240 has been upgraded. Since the thermal field structure is different from that of DSS240, DSS450 can hold more silicon material, thereby increasing polycrystalline production capacity and reducing polycrystalline cost. As far as crucible spraying is concerned, the size and quality of the crucible required by DSS450 are greater than that of DSS240, so the current spraying equipment is fundamentally different from DSS240. However, the spraying process in the industry is still the original DSS240 spraying process, which results in a lower pass rate of ingots than DSS240, and a higher proportion of ingot cracks than DSS240.
目前国内外行业内尚无较为完善的工艺来解决DSS450晶锭合格率低于DSS240，晶锭裂纹比例高于DSS240等问题。At present, there is no relatively complete process in the industry at home and abroad to solve the problems that the pass rate of DSS450 crystal ingot is lower than that of DSS240, and the proportion of crystal ingot cracks is higher than that of DSS240.
发明内容Contents of the invention
本发明要解决的技术问题是：分析现多晶喷涂设备的差异性，硅料熔化及长晶对涂层的影响，通过一套完全创新的工艺方法从根本上解决了长久以来DSS450晶锭合格率低于DSS240，晶锭裂纹比例高于DSS240等问题，同时为硅片开方产能的提高打下了基础。The technical problem to be solved by the present invention is to analyze the differences of existing polycrystalline spraying equipment, the influence of silicon material melting and crystal growth on the coating, and fundamentally solve the long-standing DSS450 crystal ingot qualified problem through a set of completely innovative process methods. The rate is lower than DSS240, and the proportion of crystal ingot cracks is higher than DSS240. At the same time, it has laid a foundation for the improvement of the production capacity of silicon wafers.
本发明所采用的技术方案为：一种坩埚的喷涂工艺，包括以下步骤：The technical scheme adopted in the present invention is: a spraying process of a crucible, comprising the following steps:
1)在喷涂加热设备的一个底面和四个侧面分别使用独立的加热控制器和限温控制器，调整出不同的升温曲线，保持喷涂过程中坩埚的恒温；1) Use independent heating controllers and temperature limit controllers on one bottom surface and four sides of the spraying heating equipment to adjust different heating curves and keep the constant temperature of the crucible during the spraying process;
2)对坩埚的一个底面和四个侧面使用不同的喷涂工艺，在喷涂的一个循环中，坩埚的底面只喷涂一遍，坩埚的每个侧面均喷涂两遍。2) Use different spraying processes for one bottom surface and four sides of the crucible. In one cycle of spraying, the bottom surface of the crucible is only sprayed once, and each side of the crucible is sprayed twice.
进一步的说，为了防止加热温度过高从而影响涂层的质量，本发明所述的步骤1)中当喷涂加热设备的加热温度高于设定值时加热控制器自动关闭。Further, in order to prevent the heating temperature from being too high and thereby affecting the quality of the coating, in step 1) of the present invention, when the heating temperature of the spraying heating equipment is higher than the set value, the heating controller is automatically turned off.
更进一步的说，为了能够使得坩埚表面喷涂均匀，避免由人员的操作习惯而造成的裂锭，本发明所述的步骤2)中坩埚的四个侧面的两遍喷涂工艺的方向不一致。Furthermore, in order to make the surface of the crucible spray evenly and avoid ingot cracking caused by personnel's operating habits, the direction of the two-pass spraying process on the four sides of the crucible in step 2) of the present invention is inconsistent.
本发明的有益效果是：结合分析现多晶喷涂设备的差异性，硅料熔化及长晶对涂层的影响，完全改变现国内外的喷涂设备加热方式和喷涂工艺，从根本上解决了长久以来DSS450晶锭合格率低于DSS240，晶锭裂纹比例高于DSS240等问题，同时为硅片开方产能的提高打下了基础。The beneficial effects of the present invention are: combined with the analysis of the difference of the existing polycrystalline spraying equipment, the influence of the melting of the silicon material and the growth of the crystal on the coating, the heating method and the spraying process of the existing domestic and foreign spraying equipment are completely changed, and the long-term solution is fundamentally solved. Since then, the DSS450 crystal ingot pass rate is lower than DSS240, and the crystal ingot crack ratio is higher than that of DSS240. At the same time, it has laid a foundation for the improvement of the production capacity of silicon wafers.
具体实施方式Detailed ways
现在结合优选实施例对本发明作进一步详细的说明。Now, the present invention will be described in further detail in conjunction with preferred embodiments.
本发明为一种坩埚的喷涂工艺，包括以下步骤：The present invention is a kind of crucible spraying process, comprises the following steps:
1)在喷涂加热设备的一个底面和四个侧面分别使用独立的加热控制器和限温控制器，调整出不同的升温曲线，保持喷涂过程中坩埚的恒温；1) Use independent heating controllers and temperature limit controllers on one bottom surface and four sides of the spraying heating equipment to adjust different heating curves and keep the constant temperature of the crucible during the spraying process;
2)对坩埚的一个底面和四个侧面使用不同的喷涂工艺，在喷涂的一个循环中，坩埚的底面只喷涂一遍，坩埚的每个侧面均喷涂两遍。2) Use different spraying processes for one bottom surface and four sides of the crucible. In one cycle of spraying, the bottom surface of the crucible is only sprayed once, and each side of the crucible is sprayed twice.
为了防止加热温度过高从而影响涂层的质量，所述的步骤1)中当喷涂加热设备的加热温度高于设定值时加热控制器自动关闭；为了能够使得坩埚表面喷涂均匀，避免由人员的操作习惯而造成的裂锭，本发明所述的步骤2)中坩埚的四个侧面的两遍喷涂工艺的方向不一致。In order to prevent the heating temperature from being too high and thus affect the quality of the coating, the heating controller is automatically closed when the heating temperature of the spraying heating equipment is higher than the set value in the step 1); Ingot cracking caused by operating habits, the direction of the two-pass spraying process on the four sides of the crucible in step 2) of the present invention is inconsistent.
以上说明书中描述的只是本发明的具体实施方式，各种举例说明不对本发明的实质内容构成限制，所属技术领域的普通技术人员在阅读了说明书后可以对以前所述的具体实施方式做修改或变形，而不背离发明的实质和范围。What is described in the above description is only the specific implementation of the present invention, and various illustrations do not limit the essence of the present invention. Those of ordinary skill in the art can modify or modify the previous specific implementation after reading the description. variations without departing from the spirit and scope of the invention.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010238294 CN101972737B (en) | 2010-07-28 | 2010-07-28 | Crucible spraying process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010238294 CN101972737B (en) | 2010-07-28 | 2010-07-28 | Crucible spraying process |
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| Publication Number | Publication Date |
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| CN101972737A true CN101972737A (en) | 2011-02-16 |
| CN101972737B CN101972737B (en) | 2013-05-15 |
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| CN 201010238294 Active CN101972737B (en) | 2010-07-28 | 2010-07-28 | Crucible spraying process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102358953A (en) * | 2011-09-28 | 2012-02-22 | 江西赛维Ldk太阳能高科技有限公司 | Crucible able to reduce crucible-adhesion and its preparation method |
| CN102909163A (en) * | 2011-08-05 | 2013-02-06 | 镇江仁德新能源科技有限公司 | Method for forming coating on inner surface of polycrystalline silicon ingot casting crucible |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101213328A (en) * | 2005-07-01 | 2008-07-02 | 维苏维尤斯·克鲁斯布公司 | Crucible for silicon crystallization |
| CN101428273A (en) * | 2008-12-05 | 2009-05-13 | 江阴海润太阳能电力有限公司 | Silicon nitride spray finishing method for quartz crucible for polysilicon solar battery casting ingot |
-
2010
- 2010-07-28 CN CN 201010238294 patent/CN101972737B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101213328A (en) * | 2005-07-01 | 2008-07-02 | 维苏维尤斯·克鲁斯布公司 | Crucible for silicon crystallization |
| CN101428273A (en) * | 2008-12-05 | 2009-05-13 | 江阴海润太阳能电力有限公司 | Silicon nitride spray finishing method for quartz crucible for polysilicon solar battery casting ingot |
Non-Patent Citations (2)
| Title |
|---|
| 《第十届中国太阳能光伏会议论文集：迎接光伏发展新时代》 20080919 许结刚 等 "坩埚喷涂旋转台的改进" 第1041-1042页 1-3 , * |
| 许结刚 等: ""坩埚喷涂旋转台的改进"", 《第十届中国太阳能光伏会议论文集：迎接光伏发展新时代》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102909163A (en) * | 2011-08-05 | 2013-02-06 | 镇江仁德新能源科技有限公司 | Method for forming coating on inner surface of polycrystalline silicon ingot casting crucible |
| CN102358953A (en) * | 2011-09-28 | 2012-02-22 | 江西赛维Ldk太阳能高科技有限公司 | Crucible able to reduce crucible-adhesion and its preparation method |
| CN102358953B (en) * | 2011-09-28 | 2015-12-09 | 江西赛维Ldk太阳能高科技有限公司 | A kind ofly reduce crucible of sticky crucible and preparation method thereof |
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| CN101972737B (en) | 2013-05-15 |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |