CN102000912B - Laser micro-nano machining system and method - Google Patents

Abstract

The invention provides a laser micro-nano processing system and method. The system according to the present invention includes: a laser light source for providing a first laser beam with a first wavelength and a second laser beam with a second wavelength, the pulse widths of the first laser beam and the second laser beam are respectively from nanoseconds to the femtosecond range and the first wavelength is different from the second wavelength; the optical delay component is used to adjust the optical path of the first laser beam or the second laser beam so that the time difference between the first laser beam and the second laser beam reaching the focal point is not greater than to be The energy level lifetime of the processed photosensitive material is excited to the excited state; the optical focusing component is used to focus the first laser beam and the second laser beam to the same focal point; and the computer-controlled micro-moving stage is used to place the photosensitive The material adjusts to the focus.

Description

A laser micro-nano processing system and method

technical field

The invention relates to a laser micro-nano processing method and a processing system, in particular to a laser micro-nano processing method and a system with precisely controllable processing resolution and processing accuracy.

Background technique

For more than half a century, lithography technology has been occupying the dominant position of micro-nano processing technology. When using laser technology for material processing, the processing resolution that can be achieved has been limited by the classical optical diffraction limit, and it is difficult to process at the nanometer scale. This problem is the core scientific problem that needs to be solved first in the development of nanophotonic processing technology. The focus of attention of scientists in this field.

Femtosecond laser micro-nano processing is a new type of ultra-fine processing technology integrating ultra-fast laser technology, microscopic technology, ultra-high-precision positioning technology, three-dimensional graphics CAD production technology and photochemical material technology. , true three-dimensional and other characteristics. This technology uses the two-photon absorption effect to limit the range of interaction between the laser and the material in a small area, thereby achieving a processing resolution below the diffraction limit. In 2001, Satoshi Kawata et al. used 780nm femtosecond pulsed laser to obtain a processing resolution of 120nm, and prepared a three-dimensional nano-cow structure. See Nature, Satoshi Kawata et al., 2001, 412(6848): 697-698. 2008 , Xian-Zi Dong et al achieved a processing resolution of 50nm by controlling laser parameters, see Appl.Phys.Lett., Xian-Zi Dong et al., American Institute of Physics, 2008, 92:091113. Dengfeng Tan et al. used the shrinkage effect of polymers to realize suspended polymer nanowires with a line width of 15nm between pre-processed cuboids, see Appl. Phys. Lett., Dengfeng Tan et al., American Institute of Physics, 2007, 90: 071106. The above-mentioned work on breaking through the diffraction limit is processed by a single beam, and a method that can accurately control the processing resolution and processing accuracy is still needed.

In order to further improve the processing resolution, some scientists proposed to use one laser beam to initiate photopolymerization, and another laser beam to limit the area where the reaction occurs, and only make the center of the excitation light focus react with the material, greatly breaking through the diffraction limit. Timothy F. Scott et al. used all-solid-state lasers to excite free radicals with a wavelength of 473nm to initiate photopolymerization, and used another beam of argon-ion lasers to generate lasers with a wavelength of 365nm to consume free radicals near the focus of the excitation light, thereby limiting the reaction area to In the extremely small range of the excitation light focus, the processing resolution below the diffraction limit is obtained, see Science, Timothy F. Scott et al., 2009, 324(5929), 913. Linie Li et al. used a near-infrared laser with a wavelength of 800nm and a pulse width of 200fs generated by a femtosecond pulsed laser to trigger material photopolymerization through a two-photon process, and another pulsed laser with the same wavelength and a pulse width of 50ps passed through a single-photon process By suppressing the degree of reaction near the focus of the excitation light, a processing resolution of 40nm in the longitudinal direction is obtained, see Science, Linjie Li et al., 2009, 324(5929), 910. Trisha L.Andrew et al. covered a layer of photochromic film on the photoresist, which made the 325nm wavelength laser generated by the helium-cadmium laser pass through, and absorbed the 325nm in the region where the 633nm wavelength laser generated by the helium-neon laser acted. wavelength laser, and use the Lloyd mirror interferometer to make the interference fringes of the two beams of light alternate with light and dark, only make the 325nm wavelength laser in a very small area pass through the photochromic film and act on the photosensitive material, and obtain a horizontal 36nm processing resolution rate, see Science, Trisha L. Andrew et al., 2009, 324(5929), 917. However, the above-mentioned techniques are limited to the processing of materials with properties that can be excited by light and forced quenching by excited state light, and it is difficult to process other types of materials.

Therefore, there is a need for a laser micro-nano processing system and method that precisely controls the processing resolution and processing accuracy of the photosensitive material to be processed by selecting a wavelength that matches the absorption characteristics of the photosensitive material to be processed.

Contents of the invention

The object of the present invention is to provide a laser micro-nano processing method and system that can precisely control processing resolution and processing accuracy. By using a laser beam with a wavelength that matches the absorption characteristics of the photosensitive material to be processed, the processing of various functional materials is realized, and the range of materials for micro-nano processing is expanded.

The invention provides a laser micro-nano processing system, the system comprising:

The laser light source is used to provide a first laser beam with a first wavelength and a second laser beam with a second wavelength, the pulse widths of the first laser beam and the second laser beam are respectively from nanoseconds to femtoseconds and the first the wavelength is different from the second wavelength;

The optical delay component is used to adjust the optical path of the first laser beam or the second laser beam so that the time difference between the first laser beam and the second laser beam reaching the focal point is not greater than the energy level lifetime of the photosensitive material to be processed when it is excited to an excited state;

an optical focusing assembly for focusing the first laser beam and the second laser beam to the same focal point; and

A computer-controlled micro-motion stage for adjusting the photosensitive material placed thereon to said focal point.

Preferably, the repetition frequency of the first laser beam and the second laser beam is 1 Hz-100 MHz, the wavelength adjustment range is 157 nm-1064 nm, and the polarization state is linear polarization, circular polarization or elliptical polarization.

Preferably, the laser light source includes a first laser providing a first laser beam and a second laser providing a second laser beam.

Preferably, the laser light source includes:

a first laser for providing a first laser beam,

a beam splitter for splitting the first laser beam into two parts,

a frequency doubler for forming one of the two parts of the first laser beam into a second laser beam having a frequency that is double the frequency of the first laser beam, and

Filter for passing the second laser beam.

Preferably, the system according to the invention further comprises a shutter for adjusting the exposure time and an optical attenuator for adjusting the exposure energy.

Preferably, the optical delay component includes four mirrors located on a one-dimensional micro-movement platform, and the optical path of the first laser beam or the second laser beam is changed by adjusting the one-dimensional micro-movement platform.

Preferably, the optical delay component includes two rectangular prisms on a one-dimensional micro-movement platform, and the optical path of the first laser beam or the second laser beam is changed by adjusting the one-dimensional micro-movement platform.

Preferably, the moving range of the one-dimensional micro-moving stage is 0.1 μm-1m.

Preferably, the optical focusing assembly includes;

a beam expander lens for respectively expanding the first laser beam and the second laser beam,

dichroic mirrors and mirrors for superimposing the first laser beam and the second laser beam into superimposed laser beams traveling along the same optical path, and

Objective lens for focusing the overlapping laser beams.

Preferably, the objective lens is a dry objective lens, a water immersion objective lens or an oil immersion objective lens.

Preferably, the laser micro-nano processing system of the present invention further includes:

a first wave plate for changing the polarization state of the first laser beam;

A second wave plate for changing the polarization state of the second laser beam.

Preferably, the micro-moving platform controlled by the computer is a three-dimensional micro-moving platform, and the moving range of the three-dimensional micro-moving platform in the x, y and z directions is 1nm-200mm.

The invention provides a laser micro-nano processing method, which comprises the following steps:

Adjust the laser light source, adjust the first laser beam and the second laser beam output by the laser light source to the first wavelength and the second wavelength that can cause the photosensitive material to be processed to produce the two-photon effect respectively, the first laser beam and the second laser beam the pulse widths range from nanoseconds to femtoseconds and the first wavelength is different from the second wavelength, respectively,

adjusting the optical path of the first laser beam or the second laser beam so that the time difference between the first laser beam and the second laser beam reaching the photosensitive material is not greater than the energy level lifetime of the photosensitive material being excited to an excited state,

focusing the first laser beam and the second laser beam to the same focal point, and

The micro-moving stage is adjusted so that the photosensitive material on the micro-moving stage is located at the focal point for micro-nano processing.

Preferably, the exposure time of the first laser beam and the second laser beam is respectively adjusted to be 1 ms-10 min, and the exposure energy of the first laser beam and the second laser beam is respectively adjusted to be the average laser power acting on the photosensitive material At 0.1μW-1W.

Preferably, the photosensitive material is selected from organic photosensitive materials, inorganic photosensitive materials and photosensitive materials containing metal ions.

Preferably, the organic photosensitive material is selected from organic materials capable of photopolymerization, organic materials capable of photodecomposition, organic materials containing molecules capable of photocrosslinking reactions, and organic materials containing molecules capable of photoisomerization reactions. organic material.

Preferably, the inorganic photosensitive material is selected from inorganic materials that can undergo photopolymerization reactions, inorganic materials that can undergo photolysis reactions, inorganic materials that contain molecules that can undergo photocrosslinking reactions, and inorganic materials that contain molecules that can undergo photoreduction reactions. and inorganic materials containing molecules that can undergo photooxidative reactions.

Preferably, the photosensitive material containing metal ions is selected from inorganic materials containing metal ions capable of photoreduction molecules, organic materials containing metal ions capable of photoreduction molecules, inorganic materials containing photooxidative molecules materials and organic materials containing molecules that can undergo photooxidative reactions.

Advantages of the present invention:

1. The system and method of the present invention enable the superposition of two laser beams in space and time, and can perform nanoscale processing in photosensitive materials, and obtain a processing resolution higher than that of processing with a single laser beam.

2. The method of the present invention can precisely control the processing resolution and processing precision by respectively adjusting the exposure energy and exposure time of the two beams of light interacting with the photosensitive material.

3. The method of the present invention can expand the range of processed materials and realize the processing of various functional materials by selecting the wavelength of the laser used to match the characteristics of different materials.

Description of drawings

Fig. 1 shows that two laser beams with wavelengths of 800nm and 500nm are respectively focused at the same focal point and the calculated light intensity distribution diagram of a beam of 800nm laser beam is focused at the focal point;

Fig. 2 shows that two beams of laser beams with a wavelength of 800nm and 400nm are focused at the same focal point and a calculated light intensity distribution diagram of a beam of 800nm laser beams is focused at the focal point;

3 is a schematic diagram of a laser processing system according to an embodiment of the present invention;

4 is a schematic diagram of a laser processing system according to another embodiment of the present invention;

5 is a schematic diagram of an optical delay component according to an embodiment of the present invention;

6 is a schematic diagram of an optical delay component according to another embodiment of the present invention;

7 is a scanning electron micrograph of a line array structure obtained by using the system of FIG. 3 with a single 800nm laser beam (a) and a superimposed laser beam (b) of 800nm and 400nm double beam lasers;

Figure 8 is a scanning electron micrograph of a dangling wire structure obtained using the system of Figure 3;

9 is a scanning electron micrograph of a two-dimensional dot array structure obtained by using the system of FIG. 3 with a single 800nm laser beam (a) and a superimposed laser beam (b) of 800nm and 400nm double laser beams;

FIG. 10 is a scanning electron micrograph of aggregated dots prepared using the system of FIG. 3 .

In the figure,

1. The first pulse laser; 2. The second pulse laser; 3. Half mirror;

4. First reflector; 5. Frequency doubling crystal; 6. Filter;

7. The first shutter; 8. The second shutter; 9. Optical delay components;

10. The first lens; 11. The second lens; 12. The third lens;

13. The fourth lens; 14. The first wave plate; 15. The second wave plate;

16. The first light gradient attenuator; 17. The second light gradient attenuator;

18. Dichroic mirror; 19. Second reflector; 20. Objective lens;

21. Computer-operated three-dimensional micro-moving platform; 22. One-dimensional micro-moving platform;

23. The third reflector; 24. The fourth reflector; 25. The fifth reflector;

26. The sixth reflector; 27. The first right-angle prism; 28. The second right-angle prism;

Detailed ways

The present invention will be described below in conjunction with preferred embodiments of the present invention with reference to the accompanying drawings. It should be understood that in the following description, numerous specific details, such as descriptions of optical components, are provided in order to provide a comprehensive understanding of the embodiments of the present invention. However, those of ordinary skill in the art should understand that the present invention is not only applicable to one or more specific descriptions, but also applicable to other structural elements, wavelengths, materials, and the like. The examples set forth below in the specification are illustrative and not restrictive.

Two laser beams with different wavelengths are superimposed and the superimposed laser beams act on the same focal point, and the light intensity distribution at the focal point is determined by the product of the light intensity distribution functions of the two laser beams at the focal point. By comparing the full width at half maximum (FWHM) of the light intensity distribution function that characterizes the laser beam spot diameter, it can be seen that the FWHM of the product of the light intensity distribution function of the superimposed laser beam is smaller than the traditional FWHM that uses the square of the light intensity of a laser beam. Therefore, using a superimposed laser beam obtained by superimposing two laser beams of different wavelengths to act on a photosensitive material with a two-photon absorption effect can achieve a resolution higher than that of a single laser beam acting on the photosensitive material with a two-photon absorption effect. high-resolution micro-nanofabrication. The light intensity distribution function of the superimposed beam obtained by superimposing two laser beams with different wavelengths at the same focal point and the relationship between the light intensity distribution function and the processing resolution will be analyzed in detail below.

According to the Debye method, see J. Stamners, Waves in Focal Regions, Adam Hilger, Bristol, 1986, for a beam of light with a wavelength of λ and a polarization direction of φ, the light intensity distribution function after being focused by an objective lens with an aperture angle of α is:

(式1)

(Formula 1)

in,

${\mathrm{<span\; class="notranslate">\; I</span>}}_{\mathrm{<span\; class="notranslate">\; a</span>}}<span\; class="notranslate">\; =</span>{\mathrm{<span\; class="notranslate">\; I</span>}}_{\mathrm{<span\; class="notranslate">\; a</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; u</span>}<span\; class="notranslate">\; ,</span>\mathrm{<span\; class="notranslate">\; v</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; =</span>\underset{\mathrm{<span\; class="notranslate">\; 0</span>}}{\overset{\mathrm{<span\; class="notranslate">\; \&alpha;</span>}}{<span\; class="notranslate">\; \&Integral;</span>}}{\mathrm{<span\; class="notranslate">\; cos</span>}}^{\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; /</span>\mathrm{<span\; class="notranslate">\; 2</span>}}\mathrm{<span\; class="notranslate">\; \&theta;</span>}\mathrm{<span\; class="notranslate">\; sin</span>}\mathrm{<span\; class="notranslate">\; \&theta;</span>}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; +</span>\mathrm{<span\; class="notranslate">\; cos</span>}\mathrm{<span\; class="notranslate">\; \&theta;</span>}<span\; class="notranslate">\; )</span>{\mathrm{<span\; class="notranslate">\; J</span>}}_{\mathrm{<span\; class="notranslate">\; 0</span>}}<span\; class="notranslate">\; (</span>\frac{\mathrm{<span\; class="notranslate">\; v</span>}\mathrm{<span\; class="notranslate">\; sin</span>}\mathrm{<span\; class="notranslate">\; \&theta;</span>}}{\mathrm{<span\; class="notranslate">\; sin</span>}\mathrm{<span\; class="notranslate">\; \&alpha;</span>}}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; \&times;</span>\mathrm{<span\; class="notranslate">\; exp</span>}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; iu</span>}\mathrm{<span\; class="notranslate">\; cos</span>}\mathrm{<span\; class="notranslate">\; \&theta;</span>}<span\; class="notranslate">\; /</span>{\mathrm{<span\; class="notranslate">\; <figure-callout\; id="2"\; label="sin"\; filenames="HSA00000281933200012.png,HSA00000281933200022.png"\; state="\{\{state\}\}">sin</figure-callout></span>}}^{\mathrm{<span\; class="notranslate">\; 2</span>}}\mathrm{<span\; class="notranslate">\; \&alpha;</span>}<span\; class="notranslate">\; )</span>\mathrm{<span\; class="notranslate">\; d\&theta;</span>}$

(Formula 1-1)

${\mathrm{<span\; class="notranslate">\; I</span>}}_{\mathrm{<span\; class="notranslate">\; b</span>}}<span\; class="notranslate">\; =</span>{\mathrm{<span\; class="notranslate">\; I</span>}}_{\mathrm{<span\; class="notranslate">\; b</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; u</span>}<span\; class="notranslate">\; ,</span>\mathrm{<span\; class="notranslate">\; v</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; =</span>\underset{\mathrm{<span\; class="notranslate">\; 0</span>}}{\overset{\mathrm{<span\; class="notranslate">\; \&alpha;</span>}}{<span\; class="notranslate">\; \&Integral;</span>}}{\mathrm{<span\; class="notranslate">\; cos</span>}}^{\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; /</span>\mathrm{<span\; class="notranslate">\; 2</span>}}\mathrm{<span\; class="notranslate">\; \&theta;</span>}{\mathrm{<span\; class="notranslate">\; <figure-callout\; id="2"\; label="sin"\; filenames="HSA00000281933200012.png,HSA00000281933200022.png"\; state="\{\{state\}\}">sin</figure-callout></span>}}^{\mathrm{<span\; class="notranslate">\; 2</span>}}\mathrm{<span\; class="notranslate">\; \&theta;</span>}{\mathrm{<span\; class="notranslate">\; J</span>}}_{\mathrm{<span\; class="notranslate">\; 1</span>}}<span\; class="notranslate">\; (</span>\frac{\mathrm{<span\; class="notranslate">\; v</span>}\mathrm{<span\; class="notranslate">\; sin</span>}\mathrm{<span\; class="notranslate">\; \&theta;</span>}}{\mathrm{<span\; class="notranslate">\; sin</span>}\mathrm{<span\; class="notranslate">\; \&alpha;</span>}}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; \&times;</span>\mathrm{<span\; class="notranslate">\; exp</span>}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; iu</span>}\mathrm{<span\; class="notranslate">\; cos</span>}\mathrm{<span\; class="notranslate">\; \&theta;</span>}<span\; class="notranslate">\; /</span>{\mathrm{<span\; class="notranslate">\; <figure-callout\; id="2"\; label="sin"\; filenames="HSA00000281933200012.png,HSA00000281933200022.png"\; state="\{\{state\}\}">sin</figure-callout></span>}}^{\mathrm{<span\; class="notranslate">\; 2</span>}}\mathrm{<span\; class="notranslate">\; \&alpha;</span>}<span\; class="notranslate">\; )</span>\mathrm{<span\; class="notranslate">\; d\&theta;</span>}$

(Formula 1-2)

${\mathrm{<span\; class="notranslate">\; I</span>}}_{\mathrm{<span\; class="notranslate">\; c</span>}}<span\; class="notranslate">\; =</span>{\mathrm{<span\; class="notranslate">\; I</span>}}_{\mathrm{<span\; class="notranslate">\; c</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; u</span>}<span\; class="notranslate">\; ,</span>\mathrm{<span\; class="notranslate">\; v</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; =</span>\underset{\mathrm{<span\; class="notranslate">\; 0</span>}}{\overset{\mathrm{<span\; class="notranslate">\; \&alpha;</span>}}{<span\; class="notranslate">\; \&Integral;</span>}}{\mathrm{<span\; class="notranslate">\; cos</span>}}^{\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; /</span>\mathrm{<span\; class="notranslate">\; 2</span>}}\mathrm{<span\; class="notranslate">\; \&theta;</span>}\mathrm{<span\; class="notranslate">\; sin</span>}\mathrm{<span\; class="notranslate">\; \&theta;</span>}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; cos</span>}\mathrm{<span\; class="notranslate">\; \&theta;</span>}<span\; class="notranslate">\; )</span>{\mathrm{<span\; class="notranslate">\; J</span>}}_{\mathrm{<span\; class="notranslate">\; 2</span>}}<span\; class="notranslate">\; (</span>\frac{\mathrm{<span\; class="notranslate">\; v</span>}\mathrm{<span\; class="notranslate">\; sin</span>}\mathrm{<span\; class="notranslate">\; \&theta;</span>}}{\mathrm{<span\; class="notranslate">\; sin</span>}\mathrm{<span\; class="notranslate">\; \&alpha;</span>}}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; \&times;</span>\mathrm{<span\; class="notranslate">\; exp</span>}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; iu</span>}\mathrm{<span\; class="notranslate">\; cos</span>}\mathrm{<span\; class="notranslate">\; \&theta;</span>}<span\; class="notranslate">\; /</span>{\mathrm{<span\; class="notranslate">\; <figure-callout\; id="2"\; label="sin"\; filenames="HSA00000281933200012.png,HSA00000281933200022.png"\; state="\{\{state\}\}">sin</figure-callout></span>}}^{\mathrm{<span\; class="notranslate">\; 2</span>}}\mathrm{<span\; class="notranslate">\; \&alpha;</span>}<span\; class="notranslate">\; )</span>\mathrm{<span\; class="notranslate">\; d\&theta;</span>}$

(Formula 1-3)

NA为物镜数值孔径，n为待加工材料的折射率；J₀、J₁、J₂均为一类贝塞尔函数；φ＝0或π/2分别指激光的偏振方向为x和y。In the formula, u and v are optical coordinates respectively, u=znk sin ² α, v=rnk sin α; k=2π/λ,

NA is the numerical aperture of the objective lens, n is the refractive index of the material to be processed; J ₀ , J ₁ , and J ₂ are all Bessel functions of a kind; φ=0 or π/2 mean that the polarization directions of the laser are x and y, respectively.

It can be seen from the above formula that the light intensity distribution function is different when the wavelength λ of the laser beam is different and the polarization direction is different. For two laser beams with different wavelengths focused on the same focal point by the same objective lens, it is necessary to calculate the respective light intensity distribution functions I ₁ and I ₂ , and then do the product to calculate the light intensity distribution of the superimposed beams at the focal point.

Taking the first laser beam of λ ₁ =800nm and the second laser beam of λ ₂ =500nm propagating along the z direction to be focused on a material with a refractive index n=1.515 by an objective lens of NA=1.45 as an example, calculate the lateral force at the focal point relative to The product of the light intensity distribution function I ₁ and I ₂ in the laser propagation direction is shown in Figure 1.

In Fig. 1, I1 and I2 represent the laser light intensity of 800nm laser and 500nm laser respectively, and Ix and Iy respectively represent that the laser used is linearly polarized light polarized along the x and y directions. From the full width at half maximum (FWHM) of the light intensity distribution, it can be seen that the FWHM of the product of the light intensity distribution function of the superimposed laser beam at the focus formed by superimposing two beams of different wavelength lasers is smaller than the square of the light intensity distribution function of a beam of 800nm laser beam at the focus The FWHM, and the polarization direction of the laser also affects the FWHM.

Taking the first laser beam of λ ₁ =800nm and the second laser beam of λ ₂ =400nm propagating along the z direction, focusing on a material with a refractive index n=1.515 by an objective lens of NA=1.45 as an example, calculate the light intensity at the focal point The product of the distribution function I ₁ and I ₂ transverse to the laser propagation direction, the result obtained is shown in Figure 2.

In Fig. 2, I1 and I2 represent the laser light intensity of 800nm and 400nm respectively, and Ix and Iy respectively represent that the laser used is linearly polarized light polarized along the x and y directions. From the FWHM of the light intensity distribution, it can be seen that the FWHM of the product of the light intensity distribution function of the superimposed laser beam at the focus formed by superimposing two beams of different wavelength lasers is smaller than the FWHM of the square of the light intensity distribution function of a beam of 800nm laser beam at the focus, and The polarization direction of the laser also has an effect on the FWHM.

From formula 1 and the calculation results shown in Figures 1 and 2, it can be seen that the diameter of the beam spot formed by focusing two laser beams of different wavelengths to the same focus is smaller than the diameter of the beam spot formed by the traditional two-photon effect of one laser beam. In other words, when the superimposed beam formed by two laser beams with different wavelengths is used to process the photosensitive material with two-photon absorption effect, its resolution is higher than that of traditional processing using the two-photon effect of a single laser beam. Rate. Further, by adjusting the polarization directions of the two laser beams respectively, the processing resolution can be further improved.

The laser micro-nano processing system of the present invention will be further described below in combination with preferred embodiments.

Fig. 3 shows a schematic diagram of a laser micro-nano processing system according to an embodiment of the present invention. The laser micro-nano processing system 100 includes: a laser 1 , a half mirror 3 , a frequency doubler, such as a frequency doubler crystal 5 , an optical delay component 9 , an optical focus component and a moving platform 21 . The laser 1 is used to generate pulsed laser light with a pulse width ranging from nanoseconds to femtoseconds. A half mirror 3 is placed on the output light path of the laser 1 to form transmitted light and reflected light. A frequency doubling crystal 5 and a filter 6 are sequentially placed on the transmitted light path along the main axis. The filter 6 is used to filter the frequency-doubled beam, and the ratio of the output energy of the frequency-doubled laser to the output energy of the filter is not less than 99.5%. The system 100 may further comprise, for example, lenses 12, 13 located after the filters on the transmitted frequency-doubled light path for expanding the frequency-doubled light. Place reflector 4 along the main axis on the reflected optical path of half mirror 3 to make the optical path of reflected fundamental frequency light parallel to the optical path of transmitted doubled frequency light, and then place optical delay component 9 to adjust the optical path so that the two laser beams reach the focal point The time difference is not greater than the energy level life of the photosensitive material to be processed when it is excited to the excited state, and then there are lenses 10 and 11 for expanding the beam of the fundamental frequency light. The system 100 may further include wave plates 15 and 14 respectively located on the transmitted light path and the reflected light path, for adjusting the polarization state of the laser light on the transmitted light path and the reflected light path respectively. The wave plate is preferably a full-wave plate, a half-wave plate and a quarter-wave plate whose working wavelength is the wavelength of the laser in the optical path. The optical focusing assembly of the system 100 includes, for example, a dichroic mirror 18 and a mirror 19 for superimposing two laser beams into one laser beam, and a laser beam for focusing the laser beam on a three-dimensional micro-moving stage 21 operated by a computer. Objective lens 20 for photosensitive material. The objective lens is preferably a dry objective lens, a water immersion objective lens or an oil immersion objective lens, with a numerical aperture of 0.7-1.65 and a magnification of 10-100. The computer-operated three-dimensional micro-movement stage preferably has a movement range of 1 nm-200 mm in x, y and z directions. The system 100 may further include shutters 8, 7 located on the transmitted optical path and reflected optical path respectively for adjusting the exposure time, and optical attenuators 17, 16 respectively located on the transmitted optical path and reflected optical path for adjusting the exposure energy. Preferably, the focal lengths of the lenses 10, 12, 12 and 13 are respectively in the range of 1mm-500mm. According to the laser micro-nano processing system of this preferred embodiment, the fundamental-frequency laser beam and the frequency-doubled laser beam are formed into a superimposed laser beam propagating along the same optical path, and the superimposed laser beam is focused on the same focal point for processing the photosensitive material to be processed , providing a method for micro-nano-fabrication of photosensitive materials with high resolution and high processing accuracy.

Fig. 4 shows a schematic diagram of a laser micro-nano processing system according to another embodiment of the present invention. The laser micro-nano processing system 200 includes: a laser 1 , a laser 2 , an optical delay component 9 , an optical focusing component and a moving stage 21 . The laser 1 is used for generating a first pulsed laser with a first wavelength and a pulse width ranging from nanoseconds to femtoseconds. The laser 2 replaces the half mirror 3 shown in Fig. 3, the reflector 4, the frequency doubling crystal 5, the filter 6, and is used to generate a pulse width with a second wavelength different from the first wavelength from nanoseconds to femtoseconds second pulse laser in the second range. In the system 200 , except for the laser 2 , other structures of the system are the same as those of the system 100 shown in FIG. 3 .

The present invention utilizes laser to carry out the method for micro-nano machining is carried out in the system of the present invention, for example comprises the following steps:

1) Turn on the laser light source, adjust the first laser beam and the second laser beam to the first wavelength and the second wavelength that can cause the photosensitive material to be processed to produce the two-photon effect, the output average power is in the range of 1mW-10W, and the wavelength is in the In the range of 157nm-1064nm, build the system of the present invention.

2) adjusting the optical path of the first laser beam or the second laser beam so that the time difference between the first laser beam and the second laser beam reaching the photosensitive material is not greater than the energy level lifetime of the photosensitive material being excited to an excited state,

3) Adjust the lens in the beam expander system through the parallel axis direction, and use the computer-operated three-dimensional micro-moving stage to focus the two beams of light on the same focal plane through the objective lens;

4) Adjust the reflector, half-mirror, rectangular prism and dichroic mirror described in the system of the present invention so that the two beams of light are focused on the same point on the same focal plane through the objective lens.

5) Place the photosensitive material on the sample stage on the computer-operated three-dimensional micro-moving stage, control the polarization state of the laser through the wave plate, control the exposure time from 1 ms to 10 minutes through the shutter, and control the effect on The average laser power on the photosensitive material is in the range of 0.1μW-1W;

6) The movement of the three-dimensional mobile platform controlled by the computer is used to realize the scanning and processing of the focal point after the superimposition of the two beams of light in the photosensitive material.

Obtain the processed structure through the post-processing process: the photosensitive material obtained in step 3) after the two beams of light is subjected to washing, thermal decomposition, ablation, etching, development and other processes, and the corresponding process conditions are selected according to the type of material ; The part of the photosensitive material that does not interact with light is removed to obtain a negative structure, or the part of the photosensitive material that interacts with light is removed to obtain a positive structure.

In the above technical solution, the photosensitive material is an organic photosensitive material, an inorganic photosensitive material, or a photosensitive material containing metal ions.

In the above technical solution, the organic photosensitive material is an organic material capable of photopolymerization, an organic material capable of photodecomposition, an organic material containing molecules capable of photocrosslinking reaction, or an organic material capable of photoisomerization Reactive molecules of organic materials.

In the above-mentioned technical solution, the inorganic photosensitive material is an inorganic material capable of photopolymerization, an inorganic material capable of photodecomposition, an inorganic material containing molecules capable of photocrosslinking, or an inorganic material containing molecules capable of photoreduction. Inorganic materials or inorganic materials containing molecules that can undergo photooxidative reactions.

In the above technical solution, the photosensitive material containing metal ions is an inorganic material containing metal ions capable of photoreduction molecules, an organic material containing metal ions capable of photoreduction molecules, or an organic material containing metal ions capable of photooxidation molecules. Molecular inorganic materials, organic materials containing molecules that can undergo photooxidative reactions.

The high processing resolution obtained by the laser micro-nano processing system and method according to the present invention will be described below in conjunction with specific examples.

Example 1

The specific implementation steps of preparing the line array structure in the photoresist with the trade name of SCR500 placed on the glass substrate will be described in detail below in conjunction with the laser micro-nano processing system according to the present invention.

The laser micro-nano processing system 100 includes: a laser 1 , a half-mirror 3 , a frequency doubling crystal 5 , an optical delay component 9 , an optical focusing component and a moving platform 21 . The laser 1 is, for example, a titanium sapphire femtosecond pulsed laser with an output wavelength of 800 nm, a pulse width of 100 fs, a pulse repetition frequency of 82 MHz, a beam diameter of 1.8 mm, and a linearly polarized laser beam. On the output optical path of the Ti:Sapphire femtosecond pulsed laser 1 is placed a half-mirror 3 made of BK7 glass, for example, with a transmittance-reflection ratio of 7:3 to form transmitted light and reflected light. The frequency multiplier on the transmission optical path includes, for example, a type I BBO frequency doubling crystal 5 with a thickness of 1 mm and an interference filter 6 for filtering 800 nm wavelength, which are sequentially placed along the main axis. The transmitted light passes through the frequency doubling crystal to obtain pure 400nm wavelength frequency doubling light with a beam diameter of 1.2mm, wherein the ratio of the energy of the 400nm wavelength laser to the energy of the filter output laser is not less than 99.5%. The system 100 may further include, for example, a lens 12 with a focal length of 60 mm and a lens 13 with a focal length of 150 mm on the transmission path as a beam expander lens for expanding the beam of the doubled frequency light. On the reflected light path of the half-mirror 3 along the main axis, for example, a reflector 4 made of BK7 glass is placed to make the reflected light path parallel to the transmitted light path, and then an optical delay component 9 is placed to adjust the optical path so that the two laser beams reach The time difference of the focus is not greater than the energy level lifetime of the photosensitive material being excited to an excited state. The optical delay component 9 includes, for example, a one-dimensional micro-movement platform 22 and four mirrors 23, 24, 25 and 26 made of BK7 glass, as shown in FIG. 5 . For example, a lens 10 with a focal length of 35 mm and a lens 11 with a focal length of 150 mm are placed after the optical delay component to expand the beam of the fundamental frequency light. Thereafter, place a half-wave plate 14 with an operating wavelength equal to 800 nm, whose optical axis direction is consistent with the polarization direction of the fundamental frequency light. The optical focusing assembly includes a dichroic mirror 18 made of BK7 glass and a reflector 19 made of BK7 glass after the frequency doubling optical path to combine the two beams of light into one, and pass through the latter with a numerical aperture of 1.45 and a magnification of 100 The oil immersion objective lens 20 with magnification is focused on the inside of the photosensitive material placed on the computer-operated three-dimensional micro-moving stage 21. Adjust the three-dimensional micro-moving stage 21 operated by the computer so that the superimposed focus of the two beams of light is on the interface between the glass substrate and the photosensitive material and set its moving speed to 10 nm/ms. Adjust optical gradient attenuator 17 to make the average power of 400nm wavelength light be 2.3 μ W, adjust optical gradient attenuator 16 to make the average power of 800nm wavelength light vary in the range of 14.91mW～11.19mW, expose in photosensitive material, use dehydrated alcohol The solution removes part of the photosensitive material that does not interact with light, and the line array structure obtained on the surface of the glass substrate is shown in FIG. 7(b). The average power of the 800nm wavelength laser of each line from left to right in the line array structure in Figure 7(b) is 14.91mW, 14.50mW, 14.09mW, 13.73mW, 13.36mW, 13.02mW, 12.68mW, 12.36mW, 12.06mW , 11.77mW, 11.48mW and 11.19mW. It can be seen that the processing resolution of the photosensitive material can be improved by reducing the processing power of the 800nm wavelength laser beam while keeping the processing power of the 400nm wavelength laser beam unchanged. In this example, a line structure with a processing resolution of less than 100 nm can be obtained under the processing conditions that the average power of the 400 nm wavelength laser is 2.3 μW and the average power of the 800 nm wavelength laser is 11.19 mW.

Comparative example 1

For the above example 1, only a single 800nm laser beam was used to expose the photosensitive material, and other experimental conditions remained the same, and comparative experimental results were obtained. Adjust optical gradient attenuator 17 to make the power of 400nm wavelength light be 0W, adjust optical gradient attenuator 16 to make the average power of 800nm wavelength light vary in the range of 14.91mW～13.36mW, expose in photosensitive material, and dehydrated with ethanol solution Part of the photosensitive material that does not interact with light is removed, and the line array structure obtained on the surface of the glass substrate is shown in Figure 7(a). The average power of the 800nm wavelength laser of each line from left to right in the line array structure in Fig. 7(a) is 14.91mW, 14.50mW, 14.09mW, 13.73mW, 13.36mW. Further reducing the laser power, the desired line structure cannot be obtained. In this example, a line structure with a processing resolution of 120 nm can be obtained under the processing condition of an 800 nm wavelength laser with an average power of 13.36 mW.

It can be seen that the laser micro-nano processing system and method according to the present invention obtains a processing resolution of less than 100 nm by changing the processing power of the 800 nm laser, which is better than the 120 nm resolution obtained by using a traditional beam of 800 nm laser. The processing energy of a single laser beam is lower than that of using a single laser beam.

Example 2

Below in conjunction with accompanying drawing 3, the system of the present invention, and the specific implementation steps of using the system to prepare a dangling line structure in the photoresist with the trade name SCR500 placed on the glass substrate are described in detail:

The system includes: the laser 1 is a titanium sapphire femtosecond pulse laser, the output wavelength of the laser 1 is 800nm, the pulse width is 100fs, the pulse repetition frequency is 82MHz, the beam diameter is 1.8mm, and the polarization state is linear polarization; firstly, turn on the titanium sapphire Femtosecond pulsed laser 1, a half mirror 3 made of BK7 glass is placed on the output optical path, and the transmission and reflection ratio is 7:3; an I-type BBO frequency-doubling crystal with a thickness of 1 mm is placed sequentially along the main axis on the transmitted optical path 5 and a piece of interference filter 6 filtering 800nm wavelength to obtain pure beam diameter is 400nm wavelength frequency-doubled light of 1.2mm, and is that the lens 12 with focal length 60mm and the lens 13 that focal length is 150mm will frequency-doubled light beam expansion; Place a reflector 4 made of BK7 glass along the main axis on the reflected light path of the half-mirror 3 to make it parallel to the other light path, and then place a one-dimensional micro-moving platform 22 and two rectangular prisms 27 made of BK7 glass and 28 form an optical delay assembly 9, as shown in Figure 6, and the base frequency light beam is expanded by a lens 10 with a focal length of 35mm and a lens 11 with a focal length of 150mm, and then a half-wave plate 14 with an operating wavelength of 800nm is placed, and The direction of the optical axis is consistent with the polarization direction of the fundamental frequency light; utilize a dichroic mirror 18 made of BK7 glass placed behind the fundamental frequency optical path and a reflector 19 made of BK7 glass placed behind the frequency doubling optical path to separate the two The light beams are combined into one path, and pass through the subsequent oil immersion objective lens 20 with a numerical aperture of 1.45 and a magnification of 100 times, focusing on the inside of the photosensitive material placed on the computer-operated three-dimensional micro-moving stage 21; The moving speed of mobile station 21 is 170nm/ms, adjusts light gradient attenuator 16 and 17 to make the average power of 400nm wavelength light be 2.5 μ W, the average power of 800nm wavelength light is 12.23mW, expose in photosensitive material, use anhydrous The ethanol solution removes the part of the photosensitive material that does not interact with light, and the dangling line structure obtained between the pre-processed cuboids with a spacing of 1 μm is shown in Figure 8, and the resolution is less than 25nm.

Example 3

Below in conjunction with Fig. 3, the system of the present invention and the specific implementation steps of using the system to prepare a two-dimensional dot array structure in the photoresist with the trade name SCR500 placed on the glass substrate are described in detail:

The system includes: the laser 1 is a titanium sapphire femtosecond pulse laser, the output wavelength of the laser 1 is 800nm, the pulse width is 100fs, the pulse repetition frequency is 82MHz, the beam diameter is 1.8mm, and the polarization state is linear polarization; firstly, turn on the titanium sapphire Femtosecond pulsed laser 1, a half mirror 3 made of BK7 glass is placed on the output optical path, and the transmission and reflection ratio is 7:3; an I-type BBO frequency-doubling crystal with a thickness of 1 mm is placed sequentially along the main axis on the transmitted optical path 5 and a piece of interference filter 6 filtering 800nm wavelength to obtain pure beam diameter is 400nm wavelength frequency-doubled light of 1.2mm, and is that the lens 12 with focal length 60mm and the lens 13 that focal length is 150mm will frequency-doubled light beam expansion; A mirror 4 made of BK7 glass is placed along the main axis on the reflected light path of the half-mirror 3 to make it parallel to the other optical path, and then placed thereafter consisting of a one-dimensional micro-moving platform 22 and four mirrors made of BK7 glass Optical retardation assembly 9, and be that the lens 10 with focal length of 35mm and the lens 11 that focal length is 150mm are beam-expanding the fundamental frequency light, place the half-wave plate 14 that working wavelength is 800nm thereafter, its optical axis direction and the polarization of fundamental frequency light The direction included angle is 45 °; Utilize a dichroic mirror 18 made of BK7 glass placed behind the frequency doubling optical path and a reflector 19 made of BK7 glass placed behind the fundamental frequency optical path to combine the two beams of light into one path, And be that 1.45, the oil immersion objective lens 20 that magnification is 100 times by the numerical aperture thereafter, focus on the photosensitive material that is placed on the three-dimensional micro mobile stage 21 of computer manipulation; Adjust the three-dimensional micro mobile stage 21 of computer manipulation to make two The focus of the superimposed beams of light is on the interface between the glass substrate and the photosensitive material; the shutters 7 and 8 are adjusted so that the exposure time of the two beams of light is 100 ms. Adjust the light gradient attenuator 16 to make the average power of the 400nm wavelength light vary in the range of 6.0 μW to 4.2 μW, adjust the light gradient attenuator 16 to make the average power of the 800nm wavelength light change in the range of 15.02mW to 10.34mW, and expose in the photosensitive material , using absolute ethanol solution to remove part of the photosensitive material that does not interact with light, and the two-dimensional dot array structure obtained on the surface of the glass substrate is shown in Figure 9(b). In Figure 9(b), the average power of the 400nm wavelength is kept unchanged from left to right, and the average power of the 800nm wavelength laser is adjusted to 15.02mW, 14.12mW, 13.20mW, 12.34mW, 11.50mW, 10.84mW, 10.34mW; Keep the average power of 800nm wavelength unchanged from top to bottom, adjust the average power of 400nm wavelength laser to 6.0μW, 5.8μW, 5.6μW, 5.4μW, 5.2μW, 5.0μW, 4.8μW, 4.6μW. In this example, under the processing conditions of an average power of 4.6 μW of a laser with a wavelength of 400 nm and an average power of 10.84 mW of a laser with a wavelength of 800 nm, a resolution of less than 130 nm can be obtained.

Comparative example 3

For the above example 3, only a single 800nm laser beam was used to expose the photosensitive material, and other experimental conditions remained the same, and comparative experimental results were obtained. Adjust optical gradient attenuator 17 to make the power of 400nm wavelength light be 0W, adjust optical gradient attenuator 16 to make the average power of 800nm wavelength light vary in the range of 15.02mW～13.20mW, expose in photosensitive material, and use dehydrated alcohol solution to Part of the photosensitive material that does not interact with light is removed, and the dot array structure obtained on the surface of the glass substrate is shown in FIG. 9( a ). In Fig. 9(a), the average power of the 800nm wavelength laser is 15.02mW, 14.12mW, and 13.20mW in turn, and the processing resolution is 155nm under the average power of 13.20mW. Dot structures cannot be obtained when using an 800nm laser beam with an average power below 13.20mW.

It can be seen that the laser micro-nano processing system and method according to the present invention can obtain a processing resolution of less than 130nm by changing the processing power of the two laser beams respectively, which is better than the 155nm resolution obtained by using a traditional 800nm laser beam. And the processing energy according to using two laser beams is lower than that using a single laser beam.

Example 4

Below in conjunction with accompanying drawing system of the present invention, and utilize this system in the photoresist that is placed on the trade name SCR500 and be placed on the concrete implementation step of polymerization point and describe in detail:

The system includes: the laser 1 is a titanium sapphire femtosecond pulse laser, the output wavelength of the laser 1 is 800nm, the pulse width is 100fs, the pulse repetition frequency is 82MHz, the beam diameter is 1.8mm, and the polarization state is linear polarization; firstly, turn on the titanium sapphire Femtosecond pulsed laser 1, a half mirror 3 made of BK7 glass is placed on the output optical path, and the transmission and reflection ratio is 7:3; an I-type BBO frequency-doubling crystal with a thickness of 1 mm is placed sequentially along the main axis on the transmitted optical path 5 and a piece of interference filter 6 filtering 800nm wavelength to obtain pure beam diameter is 400nm wavelength frequency-doubled light of 1.2mm, and is that the lens 12 with focal length 60mm and the lens 13 that focal length is 150mm will frequency-doubled light beam expansion; A mirror 4 made of BK7 glass is placed along the main axis on the reflected light path of the half-mirror 3 to make it parallel to the other optical path, and then placed thereafter consisting of a one-dimensional micro-moving platform 22 and four mirrors made of BK7 glass Optical retardation component 9, and be that the lens 10 that focal length is 35mm and the lens 11 that focal length is 150mm are that base frequency light beam is expanded, thereafter place the half-wave plate 14 that working wavelength is 800nm, adjust its optical axis direction to make base frequency light and The included angles of the polarization directions of the frequency-doubled light are 0°, 45° and 90° respectively; a dichroic mirror 18 made of BK7 glass placed behind the frequency-doubled optical path and a piece of BK7 glass placed behind the fundamental frequency optical path The reflector 19 made of glass combines the two beams of light into one, and then passes through the oil-immersion objective lens 20 with a numerical aperture of 1.45 and a magnification of 100 times to focus on the photosensitive material placed on the computer-operated three-dimensional micro-moving stage 21 Inside; adjust the computer-operated three-dimensional micro-moving stage 21 so that the focus of the superimposed two beams of light is on the interface between the glass substrate and the photosensitive material; adjust the shutters 7 and 8 so that the exposure time of the two beams of light is 100ms, and adjust the light gradient attenuation Devices 16 and 17 make the average power of 400nm wavelength light be 5.8 μ W, the average power of 800nm wavelength light is respectively 12.34mW, 13.20mW and 11.79mW for the three kinds of polarization directions, expose in photosensitive material, use dehydrated alcohol The solution removes the part of the photosensitive material that does not interact with light, and the polymerization points obtained on the surface of the glass substrate are shown in Figure 10, and the resolution is less than 135nm. It can be seen that, by changing the polarization direction of the laser beam, the processing accuracy of the laser processing system according to the embodiment of the present invention can be improved.

Although the invention has been illustrated and described herein in the context of a limited number of embodiments, the invention can be embodied in various forms without departing from the essential characteristics of the invention. In general, therefore, the illustrated and described embodiments are to be considered as illustrative and not restrictive. For example, the above detailed description can be given in terms of adjusting the exposure time. However, the techniques described above can be equally applied to gain control. For example, instead of increasing or decreasing the exposure amount, the gain amount may similarly be increased or decreased. Also, the exposure time and the amount of gain can be increased or decreased as desired. Therefore, the scope of the present invention is indicated by the appended claims, not merely by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are intended to be embraced therein.

The invention was funded by the National 973 Program (2010CB934103).

Claims (24)

1. A laser micro-nano processing system, comprising: The laser light source is used to provide a first laser beam with a first wavelength and a second laser beam with a second wavelength, the pulse widths of the first laser beam and the second laser beam are respectively from nanoseconds to femtoseconds and the first The wavelength is different from the second wavelength, and the first wavelength and the second wavelength can cause the photosensitive material to be processed to produce a two-photon effect; The optical delay component is used to adjust the optical path of the first laser beam or the second laser beam so that the time difference between the first laser beam and the second laser beam reaching the focal point is not greater than the energy level lifetime of the photosensitive material to be processed when it is excited to the excited state; an optical focusing assembly for focusing the first laser beam and the second laser beam to the same focal point; and A micro-moving stage controlled by a computer is used to adjust the photosensitive material placed thereon to the focal point, characterized in that the repetition frequency of the first laser beam and the second laser beam is 1 Hz-100 MHz, and the wavelength adjustment range is It is 157nm-1064nm, and the polarization state is linear polarization, circular polarization or elliptical polarization. the 2 . The laser micro-nano processing system according to claim 1 , wherein the laser light source comprises a first laser providing a first laser beam and a second laser providing a second laser beam. the 3. The laser micro-nano processing system according to claim 1, wherein the laser light source comprises: a first laser for providing a first laser beam, a beam splitter for splitting the first laser beam into two parts, a frequency doubler for forming one of the two parts of the first laser beam into a second laser beam having a frequency double the frequency of the first laser beam, and Filter for passing the second laser beam. the 4. The laser micro-nano processing system according to claim 1, further comprising a shutter for adjusting exposure time and an optical attenuator for adjusting exposure energy. the 5. The laser micro-nano processing system according to claim 1, wherein the optical delay component comprises four mirrors positioned on a one-dimensional micro-movement platform, and the first one-dimensional micro-movement platform is changed by adjusting the one-dimensional micro-movement platform. The optical path of a laser beam or a second laser beam. the 6. The laser micro-nano processing system according to claim 1, wherein the optical delay component comprises two right-angle prisms positioned on a one-dimensional micro-movement platform, and the first one-dimensional micro-movement platform is changed by adjusting the one-dimensional micro-movement platform. The optical path of a laser beam or a second laser beam. the 7. The laser micro-nano processing system according to claim 5 or 6, wherein the moving range of the one-dimensional micro-moving stage is 0.1 μm-lm. the 8. The laser micro-nano processing system according to claim 1, wherein the optical focusing assembly comprises; A beam expander lens that expands the first laser beam and the second laser beam respectively, dichroic mirrors and mirrors for superimposing the first laser beam and the second laser beam into superimposed laser beams traveling along the same optical path, and Objective lens for focusing the overlapping laser beams. the 9. The laser micro-nano processing system according to claim 8, wherein the objective lens is a dry objective lens, a water immersion objective lens or an oil immersion objective lens. the 10. The laser micro-nano processing system according to claim 1, further comprising: a first wave plate for changing the polarization state of the first laser beam; A second wave plate for changing the polarization state of the second laser beam. the 11. The laser micro-nano processing system according to claim 1, wherein the micro-moving stage controlled by the computer is a three-dimensional micro-moving stage, and the moving range of the three-dimensional micro-moving stage in the x, y and z directions is 1nm-200mm . the 12. The laser micro-nano processing system according to claim 1, comprising: a pulsed laser for generating a first laser beam having a first wavelength, a half-mirror for dividing the first laser beam into a first laser beam traveling along the first optical path and a second laser beam traveling along the second optical path, The first reflection mirror, the first shutter, the optical delay component, the first lens, the second lens, the first wave plate and the first optical gradient attenuator are located in sequence on the first optical path, A frequency doubling crystal, a filter, a second shutter, a third lens, a fourth lens, a second wave plate and a second optical gradient attenuator located in sequence on the second optical path, a dichroic mirror, a second mirror, and an objective lens for focusing the first and second laser beams to the same focal point, and Computer-controlled 3D micromobility stage. the 13. The laser micro-nano processing system according to claim 1, wherein the photosensitive material is selected from organic photosensitive materials, inorganic photosensitive materials and photosensitive materials containing metal ions. the 14. The laser micro-nano processing system according to claim 13, wherein the organic photosensitive material is selected from organic materials capable of photopolymerization, organic materials capable of photodecomposition, and photo-crosslinkable Organic materials with reactive molecules and organic materials containing molecules that can undergo photoisomerization reactions. the 15. The laser micro-nano processing system according to claim 13, wherein the inorganic photosensitive material is selected from inorganic materials capable of photopolymerization, inorganic materials capable of photodecomposition, containing photocrosslinkable Inorganic materials containing reactive molecules, inorganic materials containing molecules capable of photoreduction reactions, and inorganic materials containing molecules capable of photooxidative reactions. the 16. The laser micro-nano processing system according to claim 13, wherein the photosensitive material containing metal ions is selected from inorganic materials containing metal ions capable of photoreduction molecules, inorganic materials containing photoreduction molecules Organic materials containing metal ions, inorganic materials containing photooxidative molecules, and organic materials containing photooxidative molecules. the 17. A laser micro-nano processing method, characterized in that the method comprises the following steps: Adjust the laser light source, adjust the first laser beam and the second laser beam output by the laser light source to the first wavelength and the second wavelength that can cause the photosensitive material to be processed to produce the two-photon effect respectively, the first laser beam and the second laser beam the pulse widths range from nanoseconds to femtoseconds and the first wavelength is different from the second wavelength, adjusting the optical path of the first laser beam or the second laser beam, so that the time difference between the first laser beam and the second laser beam reaching the photosensitive material is not greater than the energy level lifetime of the photosensitive material being excited to an excited state, focusing the first laser beam and the second laser beam to the same focal point, and Adjusting the micro-moving stage so that the photosensitive material on the micro-moving stage is located at the focal point for micro-nano processing, it is characterized in that the repetition frequency of the first laser beam and the second laser beam is 1 Hz-100 MHz, and the wavelength is adjusted The range is 157nm-1064nm, and the polarization state is linear polarization, circular polarization or elliptical polarization. the 18. The laser micro-nano processing method according to claim 17, wherein said focusing the first laser beam and the second laser beam to the same focal point further comprises: respectively expanding the first laser beam and the second laser beam; superimposing the expanded first laser beam and the expanded second laser beam to obtain a superimposed laser beam traveling along the same optical path; The overlapping laser beams are focused to the same focal point, and the photosensitive material at the focal point is processed. the 19. The laser micro-nano processing method according to claim 17, further comprising the steps of: changing the exposure time of the first laser beam and the second laser beam by adjusting the shutters located on the optical path of the first laser beam and the optical path of the second laser beam respectively; and The exposure energy of the first laser beam and the second laser beam is changed by adjusting the optical attenuators respectively located on the optical path of the first laser beam and the optical path of the second laser beam. the 20. The laser micro-nano processing method according to claim 17, wherein the exposure time of the first laser beam and the second laser beam is respectively adjusted to be 1 ms-10 min, and the exposure time of the first laser beam and the second laser beam is adjusted respectively The exposure energy of the second laser beam is that the average power of the laser acting on the photosensitive material is 0.1μW-1W. the 21. The laser micro-nano processing method according to claim 17, wherein the photosensitive material is selected from organic photosensitive materials, inorganic photosensitive materials and photosensitive materials containing metal ions. the 22. The laser micro-nano processing method according to claim 17, wherein the organic photosensitive material is selected from organic materials capable of photopolymerization, organic materials capable of photodecomposition, and photo-crosslinkable Organic materials with reactive molecules and organic materials containing molecules that can undergo photoisomerization reactions. the 23. The laser micro-nano processing method according to claim 17, wherein the inorganic photosensitive material is selected from inorganic materials capable of photopolymerization, inorganic materials capable of photodecomposition, containing photocrosslinkable Inorganic materials containing reactive molecules, inorganic materials containing molecules capable of photoreduction reactions, and inorganic materials containing molecules capable of photooxidative reactions. the 24. The laser micro-nano processing method according to claim 17, wherein the photosensitive material containing metal ions is selected from inorganic materials containing metal ions capable of photoreduction molecules, and inorganic materials containing photoreduction molecules Organic materials containing metal ions, inorganic materials containing photooxidative molecules, and organic materials containing photooxidative molecules. the

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