CN102284792A - Device for scraping and cutting on semiconductor device chip glass passive film and using method thereof - Google Patents
Device for scraping and cutting on semiconductor device chip glass passive film and using method thereof Download PDFInfo
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- CN102284792A CN102284792A CN2011102104162A CN201110210416A CN102284792A CN 102284792 A CN102284792 A CN 102284792A CN 2011102104162 A CN2011102104162 A CN 2011102104162A CN 201110210416 A CN201110210416 A CN 201110210416A CN 102284792 A CN102284792 A CN 102284792A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000011521 glass Substances 0.000 title claims abstract description 9
- 238000007790 scraping Methods 0.000 title abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 72
- 239000010703 silicon Substances 0.000 claims abstract description 72
- 230000003287 optical effect Effects 0.000 claims abstract description 31
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 238000007664 blowing Methods 0.000 claims abstract description 11
- 230000002277 temperature effect Effects 0.000 claims description 12
- 230000001105 regulatory effect Effects 0.000 claims description 10
- 238000003556 assay Methods 0.000 claims description 6
- 230000002950 deficient Effects 0.000 claims description 6
- 238000007689 inspection Methods 0.000 claims description 6
- 238000009434 installation Methods 0.000 claims description 6
- 239000000428 dust Substances 0.000 claims description 5
- 238000012423 maintenance Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract 3
- 229910001651 emery Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
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Abstract
The invention discloses a device for scraping and cutting on a semiconductor device chip glass passive film. The device is characterized by comprising a laser, a light path transmission channel, a beam-expanding device, a deflection device, an optical focusing device, an air blowing and exhausting device, a glass passive film and an operating platform, wherein the laser is connected with the light path transmission channel; the optical focusing device is arranged on two sides of a purple light laser beam; and the air blowing and exhausting device is arranged on one side of the purple light laser beam. The invention also discloses a using method of the scraping and cutting device. The using method comprises the following steps of: adjusting the temperature value of a crystal; adjusting a horizontal polarizer of the light path transmission channel; adjusting and fixing the position of the beam-expanding device; adjusting the deflection device; arranging and adjusting the optical focusing device; adjusting and testing the horizontal angle of the operating platform; adjusting the working Q frequency and electric frequency pulse width of the laser; selecting proper current and scraping and cutting speed; and inspecting products. The device and the using method thereof have the advantages of high scraping and cutting speed, low consumption cost, low maintenance cost, high productivity and high silicon wafer area utilization ratio.
Description
Technical field
The present invention relates to a kind of on semiconductor device chip glassivation film the device of cutting-up, the invention still further relates to the using method of said apparatus.
Background technology
In the semiconductor device chip cutting-up technology, generally adopt at present on the silicon materials between chip and chip in the cutting-up zone method with emery wheel blade cutting-up: the silicon chip that will treat cutting-up is attached on the blue film, the utilization emery wheel blade of rotation is at a high speed pressed vertical, horizontal both direction cutting-up at silicon chip, then blue film being stretched tight to open makes between the semiconductor device chip disconnected from each otherly, is convenient to the encapsulation of follow-up finished product.
The method of emery wheel scribing has the following disadvantages:
1. the emery wheel scribing belongs to contact cutting-up method, and silicon chip is subjected to mechanical stamping power easily in the cutting-up process, and silicon chip easy deformation, displacement cause semiconductor chip to scrap because of edge fragmentation and cut deflection cause.
2. emery wheel blade speed when cutting-up semiconductor device chip glassivation film very slow (generally≤about 8mm/s), production efficiency is extremely low, have behind the cutting-up to contain than multiple cracks, device chip surface and adhere to dust, has a strong impact on product performance.
3. the emery wheel scribing needs more consumption-type auxiliary material, as: a large amount of deionized water, emery wheel blades, repair blade, aid etc., required maintenance cost, human cost are higher.
Summary of the invention
The objective of the invention is: at above-mentioned deficiency, it is fast to be provided on the semiconductor device chip glassivation film cutting-up speed, and consuming cost is low, the cutting-up device that maintenance cost is low, production capacity is high, the silicon area utilization rate is high.
Another object of the present invention is: the using method that above-mentioned cutting-up device is provided.
For achieving the above object, the technical solution used in the present invention is:
The device of cutting-up on semiconductor device chip glassivation film; comprise the laser instrument that can produce the purple light laser beam; optic path passage for purple light laser beam optic path; the parallel beam expand device that the purple light laser beam is dispersed; change the arrangement for deflecting of purple light laser beam parallel direction; the optical focusing device that purple light laser beam after dispersing is focused on; the dust that produces in the cutting-up process is blown most air blowing exhaust apparatus; the glassivation film on protection semiconductor device chip surface and the operating platform of placing semiconductor device chip; described laser instrument links to each other with the optic path passage; described parallel beam expand device and arrangement for deflecting place on the optic path passage; described optical focusing device is located at the both sides of purple light laser beam, and described air blowing exhaust apparatus is located at a side of purple light laser beam.
The using method of cutting-up device comprises the steps: on semiconductor device chip glassivation film
A, at first regulate 0.1 ℃ of the each fine setting of crystal temperature effect value, and measure performance number, find the crystal temperature effect value that is fit to the crystal operate as normal to be 24-26 ℃, guarantee that simultaneously the humiture of working environment is stable, guarantee the normal steady operation of laser instrument with power checker;
The horizontal polariscope of b, adjusting optic path passage guarantees that the purple light laser beam is a level from laser instrument launch hole to parallel beam expand device porch;
C, adjusting and fixing parallel beam expand device position guarantee that the purple light laser beam passes through along the central axis of parallel beam expand device;
D, regulate arrangement for deflecting, make itself and operating platform horizontal plane angle at 45, guarantee the purple light laser beam behind arrangement for deflecting vertically downward;
E, installation are also regulated optical focusing device, guarantee the central axis process of purple light laser beam along optical focusing device, and laser beam angular deflection and laser beam diffraction do not take place;
F, regulate and the level angle of test operation platform, guarantee laser beam behind optical focusing device vertical irradiation in operating platform;
G, control purple light laser beam wavelength are 355nm, in 20-70KHZ scope, regulate laser works Q frequently, 1-10uS scope in, regulate the laser instrument low-level pulse width, the adjusting parallel beam expand device is dispersed multiple in 6-12 times of scopes, regulate focusing arrangement to satisfy the cutting-up needs of different cutting-up objects, guarantee that laser beam foucing is on glassivation film surface up and down between the 50um;
H, the different qualities according to the glassivation film, the different-thickness of semiconductor device chip, cutting-up line width, sliver complexity are being selected the electric current of suitable size, selecting suitable cutting-up speed in the 30-100mm/S scope, selecting suitable laser power between 30%-90% between 20-35A;
After i, the laser system adjustment or the product that reply marks when changing wafer batch implement first inspection, surface condition with high-power microscope check cut, cut presents straight, it is qualified that the cut both sides do not have glass crack, check the cutting-up degree of depth with high-power microscope, the cutting-up degree of depth is to be qualified at the following 0-100um of silicon face, if having in above-mentioned two checks one defective, then need to readjust the laser system parameter, till meeting above-mentioned two requirements;
J, after the assay was approved, the not cutting-up face of cutting-up silicon chip is attached on the blue film, aiming at silicon chip with scraper plate above blue film simultaneously scraped, silicon chip is sticked at above the blue film, have one of wax to face up glazed paper and be placed on the rubber sliver platform, the blue film of silicon chip that will paste blue film more upwards is placed on the wax light paper; Select the suitable soft rubber roller of diameter and silicon chip size for use, promptly take rubber roll to roll silicon chip with suitable dynamics along the positive direction of chip perpendicular to the direction of silicon chip main reference plane, after having pressed a direction, rubber on silicon chip and the rubber roll revolved turn 90 degrees, another direction that rolls silicon chip more promptly is parallel to the direction of silicon chip main reference plane, the minimum power degree of being that has all disintegrated with all chips; Behind the sliver, microscopically check sliver situation: separate fully between chip and the chip, the chip edge is straight, the chip edge does not have cracked for qualified.
Advantage of the present invention is:
1. the purple light laser beam becomes a very little light spot energy very high density after focusing on by special-purpose optical system, and cutting-up glassivation film is more or less freely, and heat affecting is minimum.
2. because the laser cutting-up is contactless cutting-up, high to no mechanical stamping press of semiconductor device chip itself and cutting-up precision, improve the finished product rate when guaranteeing particular product performance parameters.
Laser cutting-up speed be the emery wheel cutting-up 5-8 doubly, and in the cutting-up process, do not need a large amount of deionized waters, when significantly improving production efficiency, reducing human cost, avoid the discharging of large quantity of exhaust gas waste water again, meet the idea of environmental protection, science sustainable development.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Fig. 1 is the embodiment of the invention 1 and 2 structural representations.
Fig. 2 is the embodiment of the invention 3 and 4 structural representations.
Wherein: 1, laser instrument, 2, the optic path passage, 3, parallel beam expand device, 4, arrangement for deflecting, 5, optical focusing device, 6, air blowing exhaust apparatus, 7, glassivation film, 8, semiconductor device chip, 9, operating platform, 10, the purple light laser beam.
The specific embodiment
Embodiment 1
As shown in Figure 1; the device of the present invention's cutting-up on semiconductor device chip glassivation film; comprise the laser instrument 1 that can produce purple light laser beam 10; optic path passage 2 for purple light laser beam 10 optic path; the parallel beam expand device 3 that purple light laser beam 10 is dispersed; change the arrangement for deflecting 4 of purple light laser beam 10 parallel directions; the optical focusing device 5 that purple light laser beam 10 after dispersing is focused on; the dust that produces in the cutting-up process is blown most air blowing exhaust apparatus 6; the glassivation film 7 on protection single table surface semiconductor device chip surface and the operating platform 9 of placing single table surface semiconductor device chip 8; described laser instrument 1 links to each other with optic path passage 2; described parallel beam expand device 3 and arrangement for deflecting 4 place on the optic path passage 2; described optical focusing device 5 is located at the both sides of purple light laser beam 10, and described air blowing exhaust apparatus 6 is located at a side of purple light laser beam 10.
Above-mentioned cutting-up device is to carry out cutting-up on the single table surface semiconductor device chip of 200um at thickness, and its using method comprises the steps:
A, at first regulate 0.1 ℃ of the each fine setting of crystal temperature effect value, and measure performance number with power checker, finding the crystal temperature effect value that is fit to the crystal operate as normal is 24 ℃, guarantees that simultaneously the humiture of working environment is stable, guarantees laser instrument 1 normal steady operation;
The horizontal polariscope of b, adjusting optic path passage 2 guarantees that purple light laser beam 10 is levels from laser instrument 1 launch hole to parallel beam expand device 3 porch;
C, adjusting and the fixing position of parallel beam expand device 3 guarantee that purple light laser beam 10 passes through along the central axis of parallel beam expand device 3;
D, regulate arrangement for deflecting 4, make itself and operating platform horizontal plane angle at 45, guarantee purple light laser beam 10 behind arrangement for deflecting 4 vertically downward;
E, installation are also regulated optical focusing device 5, guarantee the central axis process of laser beam along optical focusing device 5, and 10 angular deflections of purple light laser beam and diffraction do not take place;
F, regulate and the level angle of test operation platform 9, guarantee purple light laser beam 10 behind optical focusing device 5 vertical irradiation in operating platform 9;
G, control purple light laser beam 10 wavelength are 355nm, 20KHZ, adjusting laser instrument low-level pulse width are that 3uS, the multiple of dispersing of regulating parallel beam expand device are 8 times frequently to regulate laser works Q, regulate focusing arrangement 5, guarantee that purple light laser beam 10 focuses are on glassivation film surface up and down between the 50um;
H, selection cutting-up line width are 60um, and selecting the electric current of laser instrument is 20A, and selecting cutting-up speed is that 30mm/S, laser power are 40%;
After i, the laser system adjustment or the product that reply marks when changing wafer batch implement first inspection, surface condition with high-power microscope check cut, that cut presents is straight, not have glass crack be qualified in the cut both sides, check the cutting-up degree of depth with high-power microscope, the cutting-up degree of depth is to be qualified at the following 0-100um of silicon face, if above-mentioned two the check in have one defective, then need to readjust the laser system parameter, till meeting above-mentioned two requirements;
J, after the assay was approved, the not cutting-up face of cutting-up silicon chip is attached on the blue film, aiming at silicon chip with scraper plate above blue film simultaneously scraped, silicon chip is sticked at above the blue film, have one of wax to face up glazed paper and be placed on the rubber sliver platform, the blue film of silicon chip that will paste blue film more upwards is placed on the wax light paper; Select the suitable soft rubber roller of diameter and silicon chip size for use, promptly take rubber roll to roll silicon chip with suitable dynamics along the positive direction of chip perpendicular to the direction of silicon chip main reference plane, after having pressed a direction, rubber on silicon chip and the rubber roll revolved turn 90 degrees, another direction that rolls silicon chip more promptly is parallel to the direction of silicon chip main reference plane, the minimum power degree of being that has all disintegrated with all chips; Behind the sliver, microscopically check sliver situation: separate fully between chip and the chip, the chip edge is straight, the chip edge does not have cracked for qualified.
Embodiment 2
As shown in Figure 1, its structure of device of the present invention's cutting-up on semiconductor device chip glassivation film is with embodiment 1.
Above-mentioned cutting-up device is to carry out cutting-up on the single table surface semiconductor device chip of 300um at thickness, and its using method comprises the steps:
A, at first regulate 0.1 ℃ of the each fine setting of crystal temperature effect value, and measure performance number with power checker, finding the crystal temperature effect value that is fit to the crystal operate as normal is 25 ℃, guarantees that simultaneously the humiture of working environment is stable, guarantees laser instrument 1 normal steady operation;
B, regulate the horizontal polariscope of optic path passage 2, guarantee that 3 porch are levels from the laser instrument launch hole to parallel beam expand device for purple light laser beam 10;
C, adjusting and fixing parallel beam expand device 3 positions guarantee that purple light laser beam 10 passes through along the central axis of parallel beam expand device 3;
D, regulate arrangement for deflecting 4, make itself and operating platform horizontal plane angle at 45, guarantee purple light laser beam 10 behind arrangement for deflecting 4 vertically downward;
E, installation are also regulated optical focusing device 5, guarantee the central axis process of purple light laser beam 10 along optical focusing device 5, and 10 angular deflections of purple light laser beam and laser beam diffraction do not take place;
F, regulate and the level angle of test operation platform 9, guarantee purple light laser beam 10 behind optical focusing device 5 vertical irradiation in operating platform 9;
G, control purple light laser beam 10 wavelength are 355nm, regulate laser works Q frequently 50KHZ, to regulate the laser instrument low-level pulse width be 6uS, regulating parallel beam expand device, to disperse multiple be 10 times, regulate focusing arrangement, guarantee that laser beam foucing is on glassivation film surface up and down between the 50um;
H, selection cutting-up line width are 90um, and selecting the electric current of laser instrument is 28A, and selecting cutting-up speed is that 60mm/S, laser power are 70%;
After i, the laser system adjustment or the product that reply marks when changing wafer batch implement first inspection, surface condition with high-power microscope check cut, that cut presents is straight, not have glass crack be qualified in the cut both sides, check the cutting-up degree of depth with high-power microscope, the cutting-up degree of depth is to be qualified at the following 0-100um of silicon face, if above-mentioned two the check in have one defective, then need to readjust the laser system parameter, till meeting above-mentioned two requirements.
J, after the assay was approved, the not cutting-up face of cutting-up silicon chip is attached on the blue film, aiming at silicon chip with scraper plate above blue film simultaneously scraped, silicon chip is sticked at above the blue film, have one of wax to face up glazed paper and be placed on the rubber sliver platform, the blue film of silicon chip that will paste blue film more upwards is placed on the wax light paper; Select the suitable soft rubber roller of diameter and silicon chip size for use, promptly take rubber roll to roll silicon chip with suitable dynamics along the positive direction of chip perpendicular to the direction of silicon chip main reference plane, after having pressed a direction, rubber on silicon chip and the rubber roll revolved turn 90 degrees, another direction that rolls silicon chip more promptly is parallel to the direction of silicon chip main reference plane, the minimum power degree of being that has all disintegrated with all chips; Behind the sliver, microscopically check sliver situation: separate fully between chip and the chip, the chip edge is straight, the chip edge does not have cracked for qualified.
Embodiment 3
As shown in Figure 2; the device of the present invention's cutting-up on semiconductor device chip glassivation film comprises the laser instrument 1 that can produce purple light laser beam 10; optic path passage 2 for purple light laser beam optic path; the parallel beam expand device 3 that the purple light laser beam is dispersed; change the arrangement for deflecting 4 of purple light laser beam 10 parallel directions; the optical focusing device 5 that purple light laser beam after dispersing is focused on; the dust that produces in the cutting-up process is blown most air blowing exhaust apparatus 6; the glassivation film 7 on two mesa semiconductor devices chip 8 surfaces of protection and the operating platform 9 of placing two mesa semiconductor devices chips 8; described laser instrument 1 links to each other with optic path passage 2; described parallel beam expand device 3 and arrangement for deflecting 4 place on the optic path passage 2; described optical focusing device 5 is located at the both sides of purple light laser beam 10, and described air blowing exhaust apparatus 6 is located at a side of purple light laser beam 10.
Above-mentioned cutting-up device is to carry out cutting-up on two mesa semiconductor devices chips of 400um at thickness, and its using method comprises the steps:
A, at first regulate 0.1 ℃ of the each fine setting of crystal temperature effect value, and measure performance number with power checker, finding the crystal temperature effect value that is fit to the crystal operate as normal is 26 ℃, guarantees that simultaneously the humiture of working environment is stable, guarantees laser instrument 1 normal steady operation;
B, regulate the horizontal polariscope of optic path passage 2, guarantee that 3 porch are levels from the laser instrument launch hole to parallel beam expand device for purple light laser beam 10;
C, adjusting and fixing parallel beam expand device 3 positions guarantee that purple light laser beam 10 passes through along the central axis of parallel beam expand device 3;
D, regulate arrangement for deflecting 4, make itself and operating platform horizontal plane angle at 45, guarantee purple light laser beam 10 behind arrangement for deflecting 4 vertically downward;
E, installation are also regulated optical focusing device 5, guarantee the central axis process of purple light laser beam 10 along optical focusing device 5, and laser beam angular deflection and laser beam diffraction do not take place;
F, regulate and the level angle of test operation platform 9, guarantee purple light laser beam 10 behind optical focusing device 5 vertical irradiation in operating platform 9;
G, control purple light laser beam 10 wavelength are 355nm, regulate laser works Q frequently 70KHZ, to regulate the laser instrument low-level pulse width be 10uS, regulating parallel beam expand device, to disperse multiple be 12 times, regulate focusing arrangement, guarantee that laser beam foucing is on glassivation film surface up and down between the 50um;
H, selection cutting-up line width are 120um, and selecting the electric current of laser instrument is 35A, and selecting cutting-up speed is that 100mm/S, laser power are 90%;
After i, the laser system adjustment or the product that reply marks when changing wafer batch implement first inspection, surface condition with high-power microscope check cut, that cut presents is straight, not have glass crack be qualified in the cut both sides, check the cutting-up degree of depth with high-power microscope, the cutting-up degree of depth is to be qualified at the following 0-100um of silicon face, if above-mentioned two the check in have one defective, then need to readjust the laser system parameter, till meeting above-mentioned two requirements.
J, after the assay was approved, the not cutting-up face of cutting-up silicon chip is attached on the blue film, aiming at silicon chip with scraper plate above blue film simultaneously scraped, silicon chip is sticked at above the blue film, have one of wax to face up glazed paper and be placed on the rubber sliver platform, the blue film of silicon chip that will paste blue film more upwards is placed on the wax light paper; Select the suitable soft rubber roller of diameter and silicon chip size for use, promptly take rubber roll to roll silicon chip with suitable dynamics along the positive direction of chip perpendicular to the direction of silicon chip main reference plane, after having pressed a direction, rubber on silicon chip and the rubber roll revolved turn 90 degrees, another direction that rolls silicon chip more promptly is parallel to the direction of silicon chip main reference plane, the minimum power degree of being that has all disintegrated with all chips; Behind the sliver, microscopically check sliver situation: separate fully between chip and the chip, the chip edge is straight, the chip edge does not have cracked for qualified.
Embodiment 4
As shown in Figure 2, its structure of device of the present invention's cutting-up on semiconductor device chip glassivation film is with embodiment 3.
Above-mentioned cutting-up device is to carry out cutting-up on two mesa semiconductor devices chips of 300um at thickness, and its using method comprises the steps:
A, at first regulate 0.1 ℃ of the each fine setting of crystal temperature effect value, and measure performance number with power checker, finding the crystal temperature effect value that is fit to the crystal operate as normal is 26 ℃, guarantees that simultaneously the humiture of working environment is stable, guarantees laser instrument 1 normal steady operation;
B, regulate the horizontal polariscope of optic path passage 2, guarantee that 3 porch are levels from the laser instrument launch hole to parallel beam expand device for purple light laser beam 10;
C, adjusting and fixing parallel beam expand device 3 positions guarantee that purple light laser beam 10 passes through along the central axis of parallel beam expand device 3;
D, regulate arrangement for deflecting 4, make itself and operating platform horizontal plane angle at 45, guarantee laser beam behind arrangement for deflecting 4 vertically downward;
E, installation are also regulated optical focusing device 5, guarantee the central axis process of purple light laser beam 10 along optical focusing device 5, and laser beam angular deflection and laser beam diffraction do not take place;
F, regulate and the level angle of test operation platform 9, guarantee purple light laser beam 10 behind optical focusing device 5 vertical irradiation in operating platform 9;
G, control purple light laser beam 10 wavelength are 355nm, regulate laser works Q frequently 60KHZ, to regulate the laser instrument low-level pulse width be 8uS, regulating parallel beam expand device, to disperse multiple be 10 times, regulate focusing arrangement, guarantee that laser beam foucing is on glassivation film surface up and down between the 50um;
H, selection cutting-up line width are 110um, and selecting the electric current of laser instrument is 32A, and selecting cutting-up speed is that 90mm/S, laser power are 85%;
After i, the laser system adjustment or the product that reply marks when changing wafer batch implement first inspection, surface condition with high-power microscope check cut, that cut presents is straight, not have glass crack be qualified in the cut both sides, check the cutting-up degree of depth with high-power microscope, the cutting-up degree of depth is to be qualified at the following 0-100um of silicon face, if above-mentioned two the check in have one defective, then need to readjust the laser system parameter, till meeting above-mentioned two requirements.
J, after the assay was approved, the not cutting-up face of cutting-up silicon chip is attached on the blue film, aiming at silicon chip with scraper plate above blue film simultaneously scraped, silicon chip is sticked at above the blue film, have one of wax to face up glazed paper and be placed on the rubber sliver platform, the blue film of silicon chip that will paste blue film more upwards is placed on the wax light paper; Select the suitable soft rubber roller of diameter and silicon chip size for use, promptly take rubber roll to roll silicon chip with suitable dynamics along the positive direction of chip perpendicular to the direction of silicon chip main reference plane, after having pressed a direction, rubber on silicon chip and the rubber roll revolved turn 90 degrees, another direction that rolls silicon chip more promptly is parallel to the direction of silicon chip main reference plane, the minimum power degree of being that has all disintegrated with all chips; Behind the sliver, microscopically check sliver situation: separate fully between chip and the chip, the chip edge is straight, the chip edge does not have cracked for qualified.
Claims (2)
1. the device of cutting-up on semiconductor device chip glassivation film; it is characterized in that: comprise the laser instrument that can produce the purple light laser beam; optic path passage for purple light laser beam optic path; the parallel beam expand device that the purple light laser beam is dispersed; change the arrangement for deflecting of purple light laser beam parallel direction; the optical focusing device that purple light laser beam after dispersing is focused on; the dust that produces in the cutting-up process is blown most air blowing exhaust apparatus; the glassivation film on protection semiconductor device chip surface and the operating platform of placing semiconductor device chip; described laser instrument links to each other with the optic path passage; described parallel beam expand device and arrangement for deflecting place on the optic path passage; described optical focusing device is located at the both sides of purple light laser beam, and described air blowing exhaust apparatus is located at a side of purple light laser beam.
2. the using method of the device of cutting-up on semiconductor device chip glassivation film is characterized in that: comprise the steps:
A, at first regulate 0.1 ℃ of the each fine setting of crystal temperature effect value, and measure performance number, find the crystal temperature effect value that is fit to the crystal operate as normal to be 24-26 ℃, guarantee that simultaneously the humiture of working environment is stable, guarantee the normal steady operation of laser instrument with power checker;
The horizontal polariscope of b, adjusting optic path passage guarantees that the purple light laser beam is a level from laser instrument launch hole to parallel beam expand device porch;
C, adjusting and fixing parallel beam expand device position guarantee that the purple light laser beam passes through along the central axis of parallel beam expand device;
D, regulate arrangement for deflecting, make itself and operating platform horizontal plane angle at 45, guarantee the purple light laser beam behind arrangement for deflecting vertically downward;
E, installation are also regulated optical focusing device, guarantee the central axis process of purple light laser beam along optical focusing device, and laser beam angular deflection and laser beam diffraction do not take place;
F, regulate and the level angle of test operation platform, guarantee laser beam behind optical focusing device vertical irradiation in operating platform;
G, control purple light laser beam wavelength are 355nm, in 20-70KHZ scope, regulate laser works Q frequently, 1-10uS scope in, regulate the laser instrument low-level pulse width, the adjusting parallel beam expand device is dispersed multiple in 6-12 times of scopes, regulate focusing arrangement to satisfy the cutting-up needs of different cutting-up objects, guarantee that laser beam foucing is on glassivation film surface up and down between the 50um;
H, the different qualities according to the glassivation film, the different-thickness of semiconductor device chip, cutting-up line width, sliver complexity are being selected the electric current of suitable size, selecting suitable cutting-up speed in the 30-100mm/S scope, selecting suitable laser power between 30%-90% between 20-35A;
After i, the laser system adjustment or the product that reply marks when changing wafer batch implement first inspection, surface condition with high-power microscope check cut, cut presents straight, it is qualified that the cut both sides do not have glass crack, check the cutting-up degree of depth with high-power microscope, the cutting-up degree of depth is to be qualified at the following 0-100um of silicon face, if having in above-mentioned two checks one defective, then need to readjust the laser system parameter, till meeting above-mentioned two requirements;
J, after the assay was approved, the not cutting-up face of cutting-up silicon chip is attached on the blue film, aiming at silicon chip with scraper plate above blue film simultaneously scraped, silicon chip is sticked at above the blue film, have one of wax to face up glazed paper and be placed on the rubber sliver platform, the blue film of silicon chip that will paste blue film more upwards is placed on the wax light paper; Select the suitable soft rubber roller of diameter and silicon chip size for use, promptly take rubber roll to roll silicon chip with suitable dynamics along the positive direction of chip perpendicular to the direction of silicon chip main reference plane, after having pressed a direction, rubber on silicon chip and the rubber roll revolved turn 90 degrees, another direction that rolls silicon chip more promptly is parallel to the direction of silicon chip main reference plane, the minimum power degree of being that has all disintegrated with all chips; Behind the sliver, microscopically check sliver situation: separate fully between chip and the chip, the chip edge is straight, the chip edge does not have cracked for qualified.
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| CN2011102104162A CN102284792B (en) | 2011-07-26 | 2011-07-26 | Device for scraping and cutting on semiconductor device chip glass passive film and using method thereof |
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| CN2011102104162A CN102284792B (en) | 2011-07-26 | 2011-07-26 | Device for scraping and cutting on semiconductor device chip glass passive film and using method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103551735A (en) * | 2013-10-18 | 2014-02-05 | 昆山思拓机器有限公司 | Processing device and process for conductive rubber pad |
| CN114749811A (en) * | 2022-03-29 | 2022-07-15 | 华中科技大学 | Carbon fiber composite material hole machining system and method based on laser double-beam rotary cutting |
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| CN114749811A (en) * | 2022-03-29 | 2022-07-15 | 华中科技大学 | Carbon fiber composite material hole machining system and method based on laser double-beam rotary cutting |
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