CN102403996A - 半导体器件的移位电路 - Google Patents
半导体器件的移位电路 Download PDFInfo
- Publication number
- CN102403996A CN102403996A CN2011102522267A CN201110252226A CN102403996A CN 102403996 A CN102403996 A CN 102403996A CN 2011102522267 A CN2011102522267 A CN 2011102522267A CN 201110252226 A CN201110252226 A CN 201110252226A CN 102403996 A CN102403996 A CN 102403996A
- Authority
- CN
- China
- Prior art keywords
- clock
- shifter
- signal
- shifters
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004044 response Effects 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000010586 diagram Methods 0.000 description 8
- 230000001360 synchronised effect Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 230000015654 memory Effects 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 2
- 230000001934 delay Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12015—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising clock generation or timing circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/109—Control signal input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2272—Latency related aspects
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Dram (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2010-0083869 | 2010-08-30 | ||
| KR1020100083869A KR101747885B1 (ko) | 2010-08-30 | 2010-08-30 | 시프트 회로 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102403996A true CN102403996A (zh) | 2012-04-04 |
| CN102403996B CN102403996B (zh) | 2016-08-03 |
Family
ID=45697135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110252226.7A Active CN102403996B (zh) | 2010-08-30 | 2011-08-30 | 半导体器件的移位电路 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8644106B2 (zh) |
| KR (1) | KR101747885B1 (zh) |
| CN (1) | CN102403996B (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970070A (zh) * | 2018-10-01 | 2020-04-07 | 爱思开海力士有限公司 | 半导体器件 |
| CN111418013B (zh) * | 2018-02-07 | 2021-03-12 | 美光科技公司 | 存储器装置并行化器 |
| CN112489704A (zh) * | 2019-09-11 | 2021-03-12 | 美光科技公司 | 用于提供多相时钟的设备和方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11468958B1 (en) * | 2021-06-11 | 2022-10-11 | Winbond Electronics Corp. | Shift register circuit and a method for controlling a shift register circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11134893A (ja) * | 1997-10-30 | 1999-05-21 | Sony Corp | シフトレジスタおよびこれを用いたマトリクス型液晶表示装置の駆動回路 |
| US20030174115A1 (en) * | 1999-05-28 | 2003-09-18 | Hajime Washio | Shift register and image display apparatus using the same |
| CN1873826A (zh) * | 2005-05-30 | 2006-12-06 | 海力士半导体有限公司 | 伪静态随机存取存储器及操作控制方法 |
| CN101546545A (zh) * | 2008-11-28 | 2009-09-30 | 友达光电股份有限公司 | 时脉信号产生方法以及时脉信号产生电路 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6061418A (en) | 1998-06-22 | 2000-05-09 | Xilinx, Inc. | Variable clock divider with selectable duty cycle |
| KR100567908B1 (ko) | 2004-12-30 | 2006-04-05 | 주식회사 하이닉스반도체 | 반도체 소자의 보정 회로 및 그 구동 방법 |
-
2010
- 2010-08-30 KR KR1020100083869A patent/KR101747885B1/ko not_active Expired - Fee Related
-
2011
- 2011-08-30 US US13/220,983 patent/US8644106B2/en active Active
- 2011-08-30 CN CN201110252226.7A patent/CN102403996B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11134893A (ja) * | 1997-10-30 | 1999-05-21 | Sony Corp | シフトレジスタおよびこれを用いたマトリクス型液晶表示装置の駆動回路 |
| US20030174115A1 (en) * | 1999-05-28 | 2003-09-18 | Hajime Washio | Shift register and image display apparatus using the same |
| CN1873826A (zh) * | 2005-05-30 | 2006-12-06 | 海力士半导体有限公司 | 伪静态随机存取存储器及操作控制方法 |
| CN101546545A (zh) * | 2008-11-28 | 2009-09-30 | 友达光电股份有限公司 | 时脉信号产生方法以及时脉信号产生电路 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111418013B (zh) * | 2018-02-07 | 2021-03-12 | 美光科技公司 | 存储器装置并行化器 |
| CN110970070A (zh) * | 2018-10-01 | 2020-04-07 | 爱思开海力士有限公司 | 半导体器件 |
| CN110970070B (zh) * | 2018-10-01 | 2023-08-18 | 爱思开海力士有限公司 | 半导体器件 |
| CN112489704A (zh) * | 2019-09-11 | 2021-03-12 | 美光科技公司 | 用于提供多相时钟的设备和方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101747885B1 (ko) | 2017-06-27 |
| US8644106B2 (en) | 2014-02-04 |
| US20120051172A1 (en) | 2012-03-01 |
| KR20120020319A (ko) | 2012-03-08 |
| CN102403996B (zh) | 2016-08-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: Gyeonggi Do, South Korea Patentee after: Sk Hynix Inc. Country or region after: Republic of Korea Address before: Gyeonggi Do, South Korea Patentee before: HYNIX SEMICONDUCTOR Inc. Country or region before: Republic of Korea |
|
| CP03 | Change of name, title or address | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240613 Address after: American Texas Patentee after: Mimi IP Co.,Ltd. Country or region after: U.S.A. Address before: Gyeonggi Do, South Korea Patentee before: Sk Hynix Inc. Country or region before: Republic of Korea |
|
| TR01 | Transfer of patent right |