CN102918655A - 太阳能电池及其制造方法 - Google Patents

太阳能电池及其制造方法 Download PDF

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Publication number
CN102918655A
CN102918655A CN2011800260179A CN201180026017A CN102918655A CN 102918655 A CN102918655 A CN 102918655A CN 2011800260179 A CN2011800260179 A CN 2011800260179A CN 201180026017 A CN201180026017 A CN 201180026017A CN 102918655 A CN102918655 A CN 102918655A
Authority
CN
China
Prior art keywords
electrode layer
back electrode
layer
substrate
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800260179A
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English (en)
Chinese (zh)
Inventor
裵道园
刘永三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN102918655A publication Critical patent/CN102918655A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
CN2011800260179A 2011-01-25 2011-10-06 太阳能电池及其制造方法 Pending CN102918655A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2011-0007515 2011-01-25
KR1020110007515A KR101189432B1 (ko) 2011-01-25 2011-01-25 태양전지 및 이의 제조방법
PCT/KR2011/007406 WO2012102455A1 (fr) 2011-01-25 2011-10-06 Cellule solaire et son procédé de fabrication

Publications (1)

Publication Number Publication Date
CN102918655A true CN102918655A (zh) 2013-02-06

Family

ID=46581006

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800260179A Pending CN102918655A (zh) 2011-01-25 2011-10-06 太阳能电池及其制造方法

Country Status (5)

Country Link
EP (1) EP2529411A4 (fr)
JP (1) JP2014503130A (fr)
KR (1) KR101189432B1 (fr)
CN (1) CN102918655A (fr)
WO (1) WO2012102455A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105009304A (zh) * 2013-03-12 2015-10-28 韩国能源研究技术研究所 具有背面缓冲层的太阳能电池及其制造方法
CN110061075A (zh) * 2019-04-26 2019-07-26 圣晖莱南京能源科技有限公司 一种金属Na掺杂的CIGS太阳能电池及其制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105140309B (zh) * 2014-06-04 2017-10-03 北京创昱科技有限公司 一种薄膜太阳能电池及其制备方法
JP2018056233A (ja) * 2016-09-27 2018-04-05 積水化学工業株式会社 太陽電池

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6011215A (en) * 1997-12-18 2000-01-04 United Solar Systems Corporation Point contact photovoltaic module and method for its manufacture
CN1983568A (zh) * 2005-12-14 2007-06-20 韩国科学技术院 集成薄膜太阳能电池及其制造方法
CN101030589A (zh) * 2006-02-27 2007-09-05 三洋电机株式会社 光生伏打装置
US20100035052A1 (en) * 2005-11-02 2010-02-11 John Farah Polyimide substrate bonded to other substrate
EP2169724A1 (fr) * 2007-06-04 2010-03-31 Kaneka Corporation Cellule solaire à couche mince intégrée et son procédé de fabrication
WO2011002212A2 (fr) * 2009-06-30 2011-01-06 엘지이노텍주식회사 Appareil de génération d'énergie photovoltaïque, et procédé de fabrication afférent

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101460580B1 (ko) * 2008-02-20 2014-11-12 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
KR101081292B1 (ko) * 2009-06-30 2011-11-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6011215A (en) * 1997-12-18 2000-01-04 United Solar Systems Corporation Point contact photovoltaic module and method for its manufacture
US20100035052A1 (en) * 2005-11-02 2010-02-11 John Farah Polyimide substrate bonded to other substrate
CN1983568A (zh) * 2005-12-14 2007-06-20 韩国科学技术院 集成薄膜太阳能电池及其制造方法
CN101030589A (zh) * 2006-02-27 2007-09-05 三洋电机株式会社 光生伏打装置
EP2169724A1 (fr) * 2007-06-04 2010-03-31 Kaneka Corporation Cellule solaire à couche mince intégrée et son procédé de fabrication
WO2011002212A2 (fr) * 2009-06-30 2011-01-06 엘지이노텍주식회사 Appareil de génération d'énergie photovoltaïque, et procédé de fabrication afférent

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105009304A (zh) * 2013-03-12 2015-10-28 韩国能源研究技术研究所 具有背面缓冲层的太阳能电池及其制造方法
CN110061075A (zh) * 2019-04-26 2019-07-26 圣晖莱南京能源科技有限公司 一种金属Na掺杂的CIGS太阳能电池及其制备方法
CN110061075B (zh) * 2019-04-26 2020-06-26 圣晖莱南京能源科技有限公司 一种金属Na掺杂的CIGS太阳能电池及其制备方法

Also Published As

Publication number Publication date
EP2529411A1 (fr) 2012-12-05
KR101189432B1 (ko) 2012-10-10
KR20120086204A (ko) 2012-08-02
EP2529411A4 (fr) 2014-07-09
WO2012102455A1 (fr) 2012-08-02
JP2014503130A (ja) 2014-02-06

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Application publication date: 20130206