CN103178817B - 半导体模块 - Google Patents

半导体模块 Download PDF

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Publication number
CN103178817B
CN103178817B CN201210366646.2A CN201210366646A CN103178817B CN 103178817 B CN103178817 B CN 103178817B CN 201210366646 A CN201210366646 A CN 201210366646A CN 103178817 B CN103178817 B CN 103178817B
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CN
China
Prior art keywords
diode
semiconductor module
switching element
semiconductor
sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210366646.2A
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English (en)
Chinese (zh)
Other versions
CN103178817A (zh
Inventor
米山玲
冈部浩之
井上贵公
酒井伸次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN103178817A publication Critical patent/CN103178817A/zh
Application granted granted Critical
Publication of CN103178817B publication Critical patent/CN103178817B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes

Landscapes

  • Inverter Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN201210366646.2A 2011-12-22 2012-09-28 半导体模块 Active CN103178817B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-280836 2011-12-22
JP2011280836A JP5863442B2 (ja) 2011-12-22 2011-12-22 半導体モジュール

Publications (2)

Publication Number Publication Date
CN103178817A CN103178817A (zh) 2013-06-26
CN103178817B true CN103178817B (zh) 2016-12-21

Family

ID=48575819

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210366646.2A Active CN103178817B (zh) 2011-12-22 2012-09-28 半导体模块

Country Status (4)

Country Link
US (1) US8823018B2 (2)
JP (1) JP5863442B2 (2)
CN (1) CN103178817B (2)
DE (1) DE102012220164A1 (2)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016144326A (ja) * 2015-02-03 2016-08-08 富士電機株式会社 共振型ｄｃ−ｄｃコンバータ
US10122357B2 (en) * 2016-11-14 2018-11-06 Ford Global Technologies, Llc Sensorless temperature compensation for power switching devices
JP6852445B2 (ja) * 2017-02-16 2021-03-31 富士電機株式会社 半導体装置
DE102018114375B4 (de) * 2018-06-15 2024-06-13 Infineon Technologies Ag Leistungselektronikanordnung
TW202226529A (zh) * 2020-08-20 2022-07-01 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置
TWI877401B (zh) * 2020-08-20 2025-03-21 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置
CN112054789B (zh) * 2020-09-10 2021-08-20 成都市凌巨通科技有限公司 一种芯片大功率pin开关控制系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101290927A (zh) * 2007-04-20 2008-10-22 株式会社日立制作所 具有续流二极管的电路装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008061404A (ja) 2006-08-31 2008-03-13 Daikin Ind Ltd 電力変換装置
JP5267201B2 (ja) * 2009-02-23 2013-08-21 日産自動車株式会社 スイッチング回路
JP5476028B2 (ja) 2009-04-17 2014-04-23 株式会社日立製作所 パワー半導体スイッチング素子のゲート駆動回路及びインバータ回路
JP5212303B2 (ja) 2009-07-31 2013-06-19 ダイキン工業株式会社 電力変換装置
JP5554140B2 (ja) * 2009-09-04 2014-07-23 三菱電機株式会社 電力変換回路
JP5095803B2 (ja) 2010-11-11 2012-12-12 三菱電機株式会社 電力半導体モジュール

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101290927A (zh) * 2007-04-20 2008-10-22 株式会社日立制作所 具有续流二极管的电路装置

Also Published As

Publication number Publication date
US8823018B2 (en) 2014-09-02
JP2013132155A (ja) 2013-07-04
US20130161644A1 (en) 2013-06-27
JP5863442B2 (ja) 2016-02-16
DE102012220164A1 (de) 2013-06-27
CN103178817A (zh) 2013-06-26

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