CN103348491A - 通过在薄的半导体薄片上构造支撑元件而形成设备的方法 - Google Patents

通过在薄的半导体薄片上构造支撑元件而形成设备的方法 Download PDF

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Publication number
CN103348491A
CN103348491A CN2011800629889A CN201180062988A CN103348491A CN 103348491 A CN103348491 A CN 103348491A CN 2011800629889 A CN2011800629889 A CN 2011800629889A CN 201180062988 A CN201180062988 A CN 201180062988A CN 103348491 A CN103348491 A CN 103348491A
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CN
China
Prior art keywords
sheet
support element
layer
amorphous silicon
permanent support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800629889A
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English (en)
Chinese (zh)
Inventor
C.J.佩蒂
M.M.希拉里
T.斯米克
V.穆拉利
K.J.杰克逊
Z.李
G.普拉布
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GTAT Corp
Original Assignee
GTAT Corp
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Filing date
Publication date
Priority claimed from US12/980,424 external-priority patent/US8173452B1/en
Priority claimed from US12/980,427 external-priority patent/US8101451B1/en
Application filed by GTAT Corp filed Critical GTAT Corp
Publication of CN103348491A publication Critical patent/CN103348491A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
CN2011800629889A 2010-12-29 2011-12-22 通过在薄的半导体薄片上构造支撑元件而形成设备的方法 Pending CN103348491A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/980,424 US8173452B1 (en) 2010-12-29 2010-12-29 Method to form a device by constructing a support element on a thin semiconductor lamina
US12/980,427 US8101451B1 (en) 2010-12-29 2010-12-29 Method to form a device including an annealed lamina and having amorphous silicon on opposing faces
US12/980,427 2010-12-29
US12/980,424 2010-12-29
PCT/US2011/066957 WO2012092145A2 (fr) 2010-12-29 2011-12-22 Procédé pour former un dispositif en construisant un élément de support sur une lamelle à semi-conducteur

Publications (1)

Publication Number Publication Date
CN103348491A true CN103348491A (zh) 2013-10-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800629889A Pending CN103348491A (zh) 2010-12-29 2011-12-22 通过在薄的半导体薄片上构造支撑元件而形成设备的方法

Country Status (5)

Country Link
EP (1) EP2659517A4 (fr)
JP (1) JP2014501456A (fr)
KR (1) KR20130143100A (fr)
CN (1) CN103348491A (fr)
WO (1) WO2012092145A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8901010B2 (en) * 2013-03-15 2014-12-02 Sunpower Corporation Methods for improving solar cell lifetime and efficiency

Citations (4)

* Cited by examiner, † Cited by third party
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US20080092949A1 (en) * 2006-09-11 2008-04-24 Silicon China Limited Method and structure for textured thermal cut for photovoltaic applications for thin films
US20090142908A1 (en) * 2007-11-30 2009-06-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing photoelectric conversion device
CN101504957A (zh) * 2008-02-05 2009-08-12 特温克里克技术公司 形成包括薄层的光伏电池的方法
US20100224238A1 (en) * 2009-03-06 2010-09-09 Twin Creeks Technologies, Inc. Photovoltaic cell comprising an mis-type tunnel diode

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Publication number Priority date Publication date Assignee Title
JPH11214723A (ja) * 1998-01-29 1999-08-06 Kyocera Corp 太陽電池素子の製造方法
JP2000252492A (ja) * 1999-02-25 2000-09-14 Sumitomo Electric Ind Ltd 太陽電池、この製造方法、および積層型太陽電池
JP2002100791A (ja) * 2000-09-21 2002-04-05 Canon Inc 太陽電池の製造方法
JP2003017723A (ja) * 2001-06-29 2003-01-17 Shin Etsu Handotai Co Ltd 半導体薄膜の製造方法及び太陽電池の製造方法
JP5084146B2 (ja) * 2006-01-30 2012-11-28 三洋電機株式会社 光起電力モジュール
JP5090716B2 (ja) * 2006-11-24 2012-12-05 信越化学工業株式会社 単結晶シリコン太陽電池の製造方法
US8129613B2 (en) * 2008-02-05 2012-03-06 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having low base resistivity and method of making
JP5297219B2 (ja) * 2008-02-29 2013-09-25 信越化学工業株式会社 単結晶薄膜を有する基板の製造方法
US20090242010A1 (en) * 2008-03-27 2009-10-01 Twin Creeks Technologies, Inc. Method to Form a Photovoltaic Cell Comprising a Thin Lamina Bonded to a Discrete Receiver Element
EP2105972A3 (fr) * 2008-03-28 2015-06-10 Semiconductor Energy Laboratory Co, Ltd. Dispositif de conversion photoélectrique et procédé de fabrication de celui-ci
US7897945B2 (en) * 2008-09-25 2011-03-01 Twin Creeks Technologies, Inc. Hydrogen ion implanter using a broad beam source
JP2010093186A (ja) * 2008-10-10 2010-04-22 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子の製造方法、窒化ガリウム系化合物半導体素子の積層構造及び窒化ガリウム系化合物半導体発光素子、並びにランプ
US20100139755A1 (en) * 2008-12-09 2010-06-10 Twin Creeks Technologies, Inc. Front connected photovoltaic assembly and associated methods
US20120037211A1 (en) * 2009-04-15 2012-02-16 Sunovel (Shzhou) Technologies Limited Thin Film of Solar Battery Structure, Thin Film of Solar Array and Manufacturing Method Thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080092949A1 (en) * 2006-09-11 2008-04-24 Silicon China Limited Method and structure for textured thermal cut for photovoltaic applications for thin films
US20090142908A1 (en) * 2007-11-30 2009-06-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing photoelectric conversion device
CN101504957A (zh) * 2008-02-05 2009-08-12 特温克里克技术公司 形成包括薄层的光伏电池的方法
US20100224238A1 (en) * 2009-03-06 2010-09-09 Twin Creeks Technologies, Inc. Photovoltaic cell comprising an mis-type tunnel diode

Also Published As

Publication number Publication date
WO2012092145A2 (fr) 2012-07-05
WO2012092145A3 (fr) 2012-11-08
EP2659517A2 (fr) 2013-11-06
JP2014501456A (ja) 2014-01-20
EP2659517A4 (fr) 2017-10-25
KR20130143100A (ko) 2013-12-30

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Application publication date: 20131009