CN103456854B - 具有图形化界面的发光元件及其制造方法 - Google Patents

具有图形化界面的发光元件及其制造方法 Download PDF

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Publication number
CN103456854B
CN103456854B CN201310202914.1A CN201310202914A CN103456854B CN 103456854 B CN103456854 B CN 103456854B CN 201310202914 A CN201310202914 A CN 201310202914A CN 103456854 B CN103456854 B CN 103456854B
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pattern structures
pattern
regions
light
structures
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CN103456854A (zh
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富振华
李政宪
黄启豪
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Fuchai Optoelectronics Co.,Ltd.
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Epistar Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • Electroluminescent Light Sources (AREA)
CN201310202914.1A 2012-05-28 2013-05-28 具有图形化界面的发光元件及其制造方法 Active CN103456854B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW101119052 2012-05-28
TW101119052A TWI539624B (zh) 2012-05-28 2012-05-28 具有圖形化界面之發光元件及其製造方法

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CN103456854A CN103456854A (zh) 2013-12-18
CN103456854B true CN103456854B (zh) 2018-06-29

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US (1) US9012942B2 (2)
JP (1) JP6161955B2 (2)
KR (1) KR101863714B1 (2)
CN (1) CN103456854B (2)
DE (1) DE102013105480B4 (2)
TW (1) TWI539624B (2)

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US10319881B2 (en) * 2011-06-15 2019-06-11 Sensor Electronic Technology, Inc. Device including transparent layer with profiled surface for improved extraction
US10522714B2 (en) 2011-06-15 2019-12-31 Sensor Electronic Technology, Inc. Device with inverted large scale light extraction structures
CN103367555B (zh) * 2012-03-28 2016-01-20 清华大学 发光二极管的制备方法
KR102120264B1 (ko) * 2013-02-11 2020-06-09 루미리즈 홀딩 비.브이. 발광 디바이스 및 발광 디바이스를 제조하기 위한 방법
TW201523917A (zh) * 2013-12-12 2015-06-16 Hwasun Quartek Corp 磊晶基板、其製造方法及發光二極體
TWI623115B (zh) * 2014-10-09 2018-05-01 新世紀光電股份有限公司 具粗化表面之薄膜式覆晶發光二極體及其製造方法
DE102016200953A1 (de) * 2016-01-25 2017-07-27 Osram Opto Semiconductors Gmbh Substrat mit Strukturelementen und Halbleiterbauelement
JP6579038B2 (ja) * 2016-05-30 2019-09-25 豊田合成株式会社 半導体発光素子の製造方法
US10243099B2 (en) * 2017-05-16 2019-03-26 Epistar Corporation Light-emitting device
US12532583B2 (en) * 2019-08-29 2026-01-20 Quanzhou Sanan Semiconductor Technology Co., Ltd. Flip-chip light emitting device and production method thereof
KR102802778B1 (ko) * 2019-12-11 2025-05-07 엘지전자 주식회사 마이크로 led와 관련된 디스플레이 장치 및 이의 제조 방법
CN114868261A (zh) * 2020-01-09 2022-08-05 苏州晶湛半导体有限公司 半导体结构及其衬底、半导体结构及其衬底的制作方法
CN112820806B (zh) * 2020-12-25 2022-12-20 福建晶安光电有限公司 一种图形衬底及其制作方法以及led结构及其制作方法
TWI825390B (zh) 2021-02-02 2023-12-11 達運精密工業股份有限公司 光學擴散元件及用於三維感測的光發射組件
CN115207175B (zh) * 2022-08-26 2024-05-28 江苏第三代半导体研究院有限公司 基于图形化衬底的发光二极管芯片及其制备方法

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TWI255052B (en) * 2003-02-14 2006-05-11 Osram Opto Semiconductors Gmbh Method to produce a number of semiconductor-bodies and electronic semiconductor-bodies
KR20060131327A (ko) * 2005-06-16 2006-12-20 엘지전자 주식회사 발광 다이오드의 제조 방법
KR100640497B1 (ko) * 2005-11-24 2006-11-01 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자
KR20090082923A (ko) * 2006-11-15 2009-07-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 다중 추출기를 통하여 광을 고효율로 추출하는 발광 다이오드
US7535646B2 (en) * 2006-11-17 2009-05-19 Eastman Kodak Company Light emitting device with microlens array
JP2008181910A (ja) * 2007-01-23 2008-08-07 Mitsubishi Chemicals Corp ＧａＮ系発光ダイオード素子の製造方法
US8592800B2 (en) * 2008-03-07 2013-11-26 Trustees Of Boston University Optical devices featuring nonpolar textured semiconductor layers
JP2010087292A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd 発光素子
JP2010092936A (ja) * 2008-10-03 2010-04-22 Yamaguchi Univ 半導体装置
JP5196403B2 (ja) * 2009-03-23 2013-05-15 国立大学法人山口大学 サファイア基板の製造方法、および半導体装置
JP2011118328A (ja) 2009-11-02 2011-06-16 Sumitomo Chemical Co Ltd ランダムパターンの作成方法
CN102054279A (zh) * 2009-11-02 2011-05-11 住友化学株式会社 随机图案的生成方法
JP2011211075A (ja) * 2010-03-30 2011-10-20 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子の製造方法
EP2387081B1 (en) 2010-05-11 2015-09-30 Samsung Electronics Co., Ltd. Semiconductor light emitting device and method for fabricating the same
KR101680852B1 (ko) * 2010-05-11 2016-12-13 삼성전자주식회사 반도체 발광 소자 및 그 제조방법
CN102623600A (zh) * 2011-01-31 2012-08-01 隆达电子股份有限公司 半导体发光结构

Also Published As

Publication number Publication date
US20130313596A1 (en) 2013-11-28
CN103456854A (zh) 2013-12-18
TW201349565A (zh) 2013-12-01
KR20130133142A (ko) 2013-12-06
TWI539624B (zh) 2016-06-21
DE102013105480A1 (de) 2013-11-28
US9012942B2 (en) 2015-04-21
JP6161955B2 (ja) 2017-07-12
KR101863714B1 (ko) 2018-06-01
DE102013105480B4 (de) 2021-11-04
JP2013247367A (ja) 2013-12-09

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Address after: Hsinchu City, Taiwan, China

Patentee after: Fuchai Optoelectronics Co.,Ltd.

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Address before: Hsinchu City, Taiwan, China

Patentee before: EPISTAR Corp.

Country or region before: Taiwan, China