CN103730181A - Method for manufacturing silicon carbide Schottky junction nuclear battery - Google Patents
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- CN103730181A CN103730181A CN201310515618.7A CN201310515618A CN103730181A CN 103730181 A CN103730181 A CN 103730181A CN 201310515618 A CN201310515618 A CN 201310515618A CN 103730181 A CN103730181 A CN 103730181A
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- layer
- schottky
- silicon carbide
- epitaxial loayer
- nuclear battery
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 84
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000002161 passivation Methods 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 21
- 239000010955 niobium Substances 0.000 claims abstract description 21
- -1 niobium ions Chemical class 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 20
- 230000002285 radioactive effect Effects 0.000 claims abstract description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 15
- 238000002513 implantation Methods 0.000 claims description 14
- 230000000802 nitrating effect Effects 0.000 claims description 13
- 238000005566 electron beam evaporation Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000007772 electroless plating Methods 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229940090044 injection Drugs 0.000 description 13
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000002604 ultrasonography Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005025 nuclear technology Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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Abstract
The invention discloses a method for manufacturing a silicon carbide Schottky junction nuclear battery. The battery sequentially comprises an n-type ohm contact electrode 8, an n-type SiC substrate 7, an n-type SiC epitaxial layer 6, a SiO2 passivation layer 5, a Schottky metal contact layer 4, a Schottky contact electrode 3, a bonding layer 2 and a radioactive isotope source layer 1 from bottom to top. The steps for forming the n-type SiC epitaxial layer 6 include injecting niobium ions with the energy ranging from 2000KeV to 2500KeV and the dose of 5*1013-1*1015cm-2 into an initial n-type SiC epitaxial layer, carrying out annealing for 20-40 minutes at the high temperature ranging from 1450 DEG C to 1650 DEG C, and accordingly obtaining the n-type SiC epitaxial layer with the doping concentration of 1*1013-5*1014cm-3. According to the method, the current carrier concentration of the n-type epitaxial layer can be reduced, the width of the depletion region is increased, the collection rate of generated electron hole pairs is improved, and therefore open-circuit voltage and energy conversion efficiency of a device are improved.
Description
Technical field
The invention belongs to nuclear technology and microelectronics interleaving techniques field, relate in particular to a kind of manufacture method of silicon carbide Schottky junction type nuclear battery, it can directly be converted to electric energy by the nuclear energy of isotope radiation.
Technical background
Nineteen fifty-three, it is found that the β particle that utilizes isotope decay to produce can produce electron hole pair in semiconductor, and this phenomenon is called as β voltage effects.Nineteen fifty-seven, first people are used in power supply supply side by β voltage effects, and successfully experiment produces first radioisotope micro battery.Since 1989, GaN, GaP, AlGaAs, the materials such as polysilicon are utilized the material as β-Voltaic battery in succession.Along with the preparation of semiconductor material with wide forbidden band SiC and the progress of technology, 2006 start, and have in succession occurred the relevant report of the radioisotope micro battery based on SiC on both at home and abroad.
In Chinese patent literature CN101325093A, disclose a kind of Schottky junction type nuclear cell based on SiC, it comprises bonded layer, schottky metal layer, SiO from top to bottom successively
2passivation layer, the low-doped SiC epitaxial loayer of N-shaped, the highly doped SiC substrate of N-shaped, Ohm contact electrode.This schottky junction nuclear battery schottky contact layer covers whole cell area, incident particle arrives after device surface, capital is subject to stopping of schottky contact layer, only have part particle can enter device inside, and the particle that enters depletion region just can have contribution to the output power of battery, therefore, the loss of the nuclear battery projectile energy of this structure is large, and energy conversion efficiency is lower.
Summary of the invention
The object of the invention is to avoid above-mentioned the deficiencies in the prior art, a kind of method for making of silicon carbide Schottky junction type nuclear battery is proposed, the method can reduce the carrier concentration of N-shaped epitaxial loayer, increase width of depletion region, improve the collection rate of the electron hole pair producing, and then improve open-circuit voltage and the energy conversion efficiency of device.
For achieving the above object, the method for making of silicon carbide Schottky junction type nuclear battery provided by the invention, comprises the steps:
(1) in doping content, be 1 * 10
18～7 * 10
18cm
-3highly doped N-shaped SiC substrate on, epitaxial growth thickness is 3um～5um, nitrating concentration is 1 * 10
15～5 * 10
15cm
-3initial N-shaped SiC epitaxial loayer;
(2) on initial N-shaped SiC epitaxial loayer, carrying out Implantation Energy is 2000KeV～2500KeV again, and implantation dosage is 5 * 10
13～1 * 10
15cm
-2niobium ion inject, thermal annealing 20～40 minutes under the high temperature of 1450 ℃～1650 ℃ then, and then to obtain doping content be 1 * 10
13～5 * 10
14cm
-3n-shaped SiC epitaxial loayer;
(3) to doping content, be 1 * 10
13～5 * 10
14cm
-3n-shaped SiC epitaxial loayer carry out dry-oxygen oxidation, form SiO
2passivation layer;
(4) use reactive ion etching method at the back-etching SiC of N-shaped SiC substrate layer, electron beam evaporation Ni/Cr/Au metal level, at 1100 ± 50 ℃ of temperature, in nitrogen atmosphere, annealing forms Ohm contact electrode;
(5) at SiO
2the centre of passivation layer utilizes wet etching to go out Schottky contacts window, and on this window and the SiO of window periphery
2on passivation layer, the translucent high barrier schottky metal Ni of deposit or Pt or Au, peel off and form respectively schottky metal contact layer and Schottky contact electrode;
(6) on Schottky contact electrode, deposited by electron beam evaporation Cr/Au forms bonded layer;
(7) on schottky metal contact layer, plate radioactive isotope power supply Ni-63 layer, complete the making of the silicon carbide Schottky junction type nuclear battery of niobium Doped n-type epitaxial loayer.
The present invention compared with prior art tool has the following advantages: the silicon carbide Schottky junction type nuclear battery that the present invention makes, because N-shaped epitaxial loayer is to adopt nitrating epitaxial growth, then N-shaped epitaxial loayer being carried out to niobium ion injection again compensates the free carrier on epitaxial loayer energy level, therefore the charge carrier doping content of N-shaped epitaxial loayer is extremely low, increase width of depletion region, improve the collection rate of the electron hole pair producing, and then improve open-circuit voltage and the energy conversion efficiency of device;
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of silicon carbide Schottky junction type nuclear battery of the present invention.
Embodiment
As shown in Figure 1, silicon carbide Schottky junction type nuclear battery of the present invention comprises N-shaped Ohm contact electrode 8, N-shaped SiC substrate 7, N-shaped SiC epitaxial loayer 6, SiO
2passivation layer 5, schottky metal contact layer 4, Schottky contact electrode 3, bonded layer 2 and radioactive isotope power supply layer 1, wherein the doping content of N-shaped SiC substrate 7 is 1 * 10
18～7 * 10
18cm
-3, its back side is that by thickness, to be divided the N-shaped Ohm contact electrode 8 of the Ni/Cr/Au alloy composition of 200nm/50nm/100nm, front be that thickness is 3um～5um, doping content is 1 * 10
13～5 * 10
14cm
-3n-shaped SiC epitaxial loayer 6, this N-shaped SiC epitaxial loayer 6 is 2000KeV～2500KeV by Implantation Energy, dosage is 5 * 10
13～1 * 10
15cm
-2niobium ion form.N-shaped SiC epitaxial loayer 6 tops, left and right are SiO
2passivation layer 5, is Schottky contacts metal level 4 and Schottky contact electrode 3 directly over N-shaped SiC epitaxial loayer 6, and the top, left and right of Schottky contact electrode 3 is bonded layer 2, is isotope source layer 1 directly over Schottky contacts metal level 4.
The method for making of nuclear battery of the present invention provides following three kinds of embodiment.
Embodiment 1
Step 1, extension N-shaped epitaxial loayer on the highly doped N-shaped substrate of SiC print.
Selecting doping content is 1 * 10
18cm
-3highly doped N-shaped SiC substrate 7, after cleaning, on highly doped N-shaped SiC substrate, epitaxial growth thickness is 4um, the initial N-shaped epitaxial loayer of nitrogen ion doping, its doping content is 1 * 10
15cm
-3, epitaxial temperature is 1570 ℃, and pressure is 100mbar, and reacting gas is silane and propane, and its flow is respectively 50sccm and 150sccm, and carrier gas is pure hydrogen, and impurity source is liquid nitrogen.
Step 2: be 1 * 10 to nitrating concentration
15cm
-3initial N-shaped SiC epitaxial loayer carries out niobium ion injection.
(2.1) to nitrating concentration, be 1 * 10
15cm
-3initial N-shaped SiC epitaxial loayer carry out niobium ion injection, its niobium ion injection condition is: the energy of Implantation is 2200KeV, implantation dosage is 5 * 10
13cm
-2, to guarantee that the maximum concentration of niobium ion is greater than the doping content of the epitaxial loayer after nitrating;
(2.2) the N-shaped SiC epitaxial loayer after Implantation is carried out to high-temperature thermal annealing, make to inject ion redistribution, reduce lattice damage, and then to obtain doping content be 1 * 10
13cm
-3low-doped N-shaped SiC epitaxial loayer 6, the condition of its high-temperature thermal annealing is: annealing temperature is 1450 ℃, annealing time is 40 minutes.
Step 3: be 1 * 10 in doping content
13cm
-3on N-shaped SiC epitaxial loayer, form SiO
2passivation layer.
At 1100 ± 50 ℃ of temperature, N-shaped SiC epitaxial loayer 6 is carried out to the dry-oxygen oxidation of two hours, form SiO
2passivation layer 5.
Step 4: form Ohmic contact at substrate back.
(4.1) the SiC layer that is 0.5um by reactive ion etching method at the back-etching thickness of N-shaped SiC substrate 7;
(4.2) 7 back side deposited by electron beam evaporation thickness of the N-shaped SiC substrate after etching are respectively the Ni/Cr/Au of 200nm/50nm/200nm;
(4.3), at 1100 ± 50 ℃ of temperature, in nitrogen atmosphere, whole sample annealing is formed to Ohm contact electrode 8 for two minutes.
Step 5: deposit schottky metal contact layer and Schottky contact electrode.
(5.1) the HF acid corrosion that employing concentration is 5% 10 seconds, at SiO
2the centre position of passivation layer 3 erodes away Schottky contacts window;
(5.2) at the SiO of the window eroding away and window periphery
2the Ni that on passivation layer, d.c. sputtering deposition thickness is 5nm;
(5.3) by ultrasound wave, peel off respectively and form schottky metal contact layer 4 at described window, at the SiO of described window periphery
2on passivation layer, form Schottky contact electrode 3;
Step 6: make bonded layer on Schottky contact electrode.
On Schottky contact electrode 3, first deposited by electron beam evaporation thickness is respectively 10nm/200nm Cr/Au, then is peeled off and formed bonded layer 2 by ultrasound wave.
Step 7: power on and plate radioactive isotope power supply Ni-63 layer 1 at schottky metal contact layer 4.
Step 1: extension N-shaped epitaxial loayer on the highly doped N-shaped substrate of SiC print.
Selecting doping content is 5 * 10
18cm
-3highly doped N-shaped SiC substrate 7, after cleaning, on highly doped N-shaped SiC substrate, epitaxial growth thickness is 3um, the initial N-shaped epitaxial loayer of nitrogen ion doping, its doping content is 5 * 10
15cm
-3, epitaxial temperature is 1570 ℃, pressure 100mbar, and reacting gas is silane and propane, and its flow is respectively 50sccm and 150sccm, and carrier gas is pure hydrogen, and impurity source is liquid nitrogen.
Step 2: be 5 * 10 to nitrating concentration
15cm
-3initial N-shaped SiC epitaxial loayer carries out niobium ion injection.
(2.1) to nitrating concentration, be 5 * 10
15cm
-3initial N-shaped SiC epitaxial loayer carry out niobium ion injection, its niobium ion injection condition is: the energy of Implantation is 2000KeV, implantation dosage is 1 * 10
15cm
-2, to guarantee that the maximum concentration of niobium ion is greater than the doping content of the epitaxial loayer after nitrating;
(2.2) the N-shaped SiC epitaxial loayer after Implantation is carried out to high-temperature thermal annealing, make to inject ion redistribution, reduce lattice damage, and then to obtain doping content be 5 * 10
14cm
-3low-doped N-shaped SiC epitaxial loayer 6, the condition of its high-temperature thermal annealing is: annealing temperature is 1550 ℃, annealing time is 40 minutes.
Step 3: be 5 * 10 in assorted concentration
14cm
-3on N-shaped SiC epitaxial loayer, form SiO
2passivation layer.
At 1100 ± 50 ℃ of temperature, N-shaped SiC epitaxial loayer 6 is carried out to the dry-oxygen oxidation of two hours, form SiO
2passivation layer 5.
The 4th step: form Ohmic contact at substrate back.
(4.1) the SiC layer that is 0.5um by reactive ion etching method at the back-etching thickness of N-shaped SiC substrate 7;
(4.2) 7 back side deposited by electron beam evaporation thickness of the N-shaped SiC substrate after etching are respectively the Ni/Cr/Au of 200nm/50nm/200nm;
(4.3), at 1100 ± 50 ℃ of temperature, in nitrogen atmosphere, whole sample annealing is formed to Ohm contact electrode 8 for two minutes.
The 5th step: deposit schottky metal contact layer and Schottky contact electrode.
(5.1) the HF acid corrosion that employing concentration is 5% 10 seconds, at SiO
2the centre position of passivation layer 3 erodes away Schottky contacts window;
(5.2) at the SiO of the window eroding away and window periphery
2the Pt that on passivation layer, d.c. sputtering deposition thickness is 10nm;
(5.3) by ultrasound wave, peel off respectively and form schottky metal contact layer 4 at described window, at the SiO of described window periphery
2on passivation layer, form Schottky contact electrode 3;
The 6th step: make bonded layer on Schottky contact electrode.
On Schottky contact electrode 3, first deposited by electron beam evaporation thickness is respectively 10nm/200nm Cr/Au, then is peeled off and formed bonded layer 2 by ultrasound wave.
The 7th step: radioactive isotope power supply Ni-63 layer 1 in electroless plating on schottky metal contact layer 4.
Steps A: extension N-shaped epitaxial loayer on the highly doped N-shaped substrate of SiC print.
Selecting doping content is 7 * 10
18cm
-3highly doped N-shaped SiC substrate 7, after cleaning, on highly doped N-shaped SiC substrate, epitaxial growth thickness is 5um, the initial N-shaped epitaxial loayer of nitrogen ion doping, its doping content is 2 * 10
15cm
-3, epitaxial temperature is 1570 ℃, pressure 100mbar, and reacting gas is silane and propane, and its flow is respectively 50sccm and 150sccm, and carrier gas is pure hydrogen, and impurity source is liquid nitrogen.
Step B: be 2 * 10 to nitrating concentration
15cm
-3initial N-shaped SiC epitaxial loayer carries out niobium ion injection.
(B1) to nitrating concentration, be 2 * 10
15cm
-3initial N-shaped SiC epitaxial loayer carry out niobium ion injection, its niobium ion injection condition is: the energy of Implantation is 2500KeV, implantation dosage is 1 * 10
14cm
-2, to guarantee that the maximum concentration of niobium ion is greater than the doping content of the epitaxial loayer after nitrating;
(B2) the N-shaped SiC epitaxial loayer after Implantation is carried out to high-temperature thermal annealing, make to inject ion redistribution, reduce lattice damage, and then to obtain doping content be 5 * 10
13cm
-3low-doped N-shaped SiC epitaxial loayer 6, the condition of its high-temperature thermal annealing is: annealing temperature is 1650 ℃, annealing time is 20 minutes.
Step C: be 5 * 10 in assorted concentration
13cm
-3on N-shaped SiC epitaxial loayer, form SiO
2passivation layer.
At 1100 ± 50 ℃ of temperature, N-shaped SiC epitaxial loayer 6 is carried out to the dry-oxygen oxidation of two hours, form SiO
2passivation layer 5.
D step: form Ohmic contact at substrate back.
(4.1) the SiC layer that is 0.5um by reactive ion etching method at the back-etching thickness of N-shaped SiC substrate 7;
(4.2) 6 back side deposited by electron beam evaporation thickness of the N-shaped SiC substrate after etching are respectively the Ni/Cr/Au of 200nm/50nm/200nm;
(4.3), at 1100 ± 50 ℃ of temperature, in nitrogen atmosphere, whole sample annealing is formed to Ohm contact electrode 8 for two minutes.
E step: deposit schottky metal contact layer and Schottky contact electrode.
(5.1) the HF acid corrosion that employing concentration is 5% 10 seconds, at SiO
2the centre position of passivation layer 3 erodes away Schottky contacts window;
(5.2) at the SiO of the window eroding away and window periphery
2the Au that on passivation layer, d.c. sputtering deposition thickness is 20nm;
(5.3) by ultrasound wave, peel off respectively and form schottky metal contact layer 4 at described window, at the SiO of described window periphery
2on passivation layer, form Schottky contact electrode 3;
F step: make bonded layer on Schottky contact electrode.
On Schottky contact electrode 3, first deposited by electron beam evaporation thickness is respectively 10nm/200nm Cr/Au, then is peeled off and formed bonded layer 2 by ultrasound wave.
G step: radioactive isotope power supply Ni-63 layer 1 in molecular plating on schottky metal contact layer 4.
From the above description of this invention, can obviously learn, the present invention can change with many forms, and energy and dosage that particularly niobium ion injects need carrier concentration according to actual needs to determine.And these variations can not be considered to surpass technological thought of the present invention and scope.And, to those skilled in the art, within these apparent variant are all included in the scope of the claims in the present invention book.
Claims (6)
1. a manufacture method for silicon carbide Schottky junction type nuclear battery, comprises the steps:
(1) in doping content, be 1 * 10
18～7 * 10
18cm
-3highly doped N-shaped SiC substrate on, epitaxial growth thickness is 3um～5um, nitrating concentration is 1 * 10
15～5 * 10
15cm
-3initial N-shaped SiC epitaxial loayer;
(2) on initial N-shaped SiC epitaxial loayer, carrying out Implantation Energy is 2000KeV～2500KeV again, and implantation dosage is 5 * 10
13～1 * 10
15cm
-2niobium ion inject, thermal annealing 20～40 minutes under the high temperature of 1450 ℃～1650 ℃ then, and then to obtain doping content be 1 * 10
13～5 * 10
14cm
-3n-shaped SiC epitaxial loayer;
(3) to doping content, be 1 * 10
13～5 * 10
14cm
-3n-shaped SiC epitaxial loayer carry out dry-oxygen oxidation, form SiO
2passivation layer;
(4) use reactive ion etching method at the back-etching SiC of N-shaped SiC substrate layer, electron beam evaporation Ni/Cr/Au metal level, at 1100 ± 50 ℃ of temperature, in nitrogen atmosphere, annealing forms Ohm contact electrode;
(5) at SiO
2the centre of passivation layer utilizes wet etching to go out Schottky contacts window, and on this window and the SiO of window periphery
2on passivation layer, the translucent high barrier schottky metal Ni of deposit or Pt or Au, peel off and form respectively schottky metal contact layer and Schottky contact electrode;
(6) on Schottky contact electrode, deposited by electron beam evaporation Cr/Au forms bonded layer;
(7) on schottky metal contact layer, plate radioactive isotope power supply Ni-63 layer, complete the making of the silicon carbide Schottky junction type nuclear battery of niobium Doped n-type epitaxial loayer.
2. silicon carbide Schottky junction type nuclear battery according to claim 1, is characterized in that, the maximum concentration that injects niobium ion is greater than the doping content of the epitaxial loayer after nitrating.
3. the method for making of silicon carbide Schottky junction type nuclear battery according to claim 1, is characterized in that, the dry-oxygen oxidation in described step (3) is to be 1100 ± 50 ℃ of temperature in process conditions, under the condition of two hours time, carries out.
4. the method for making of silicon carbide Schottky junction type nuclear battery according to claim 1, is characterized in that, the electron beam evaporation Ni/Cr/Au metal level that step (4) is described, and its thickness is respectively 200nm/50nm/200nm.
5. the method for making of silicon carbide Schottky junction type nuclear battery according to claim 1, is characterized in that, the thickness of the translucent high barrier schottky metal contact layer that step (5) is described is less than or equal to 20nm.
6. the method for making of silicon carbide Schottky junction type nuclear battery according to claim 1, is characterized in that, the isotope source described in step (8) is to be plated on Schottky contact electrode by plating or electroless plating or molecular plating.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104392761A (en) * | 2014-11-14 | 2015-03-04 | 中国工程物理研究院核物理与化学研究所 | Radiological volt isotope battery and preparation method thereof |
| CN107210078A (en) * | 2014-11-14 | 2017-09-26 | 动力能源澳大利亚私人有限公司 | Generator system |
| CN109192350A (en) * | 2018-10-08 | 2019-01-11 | 山西大同大学 | A kind of Schottky minisize nuclear battery and preparation method thereof based on carbofrax material |
| CN110491541A (en) * | 2018-10-29 | 2019-11-22 | 长安大学 | A kind of H-3 silicon carbide isotope battery and its manufacturing method |
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| CN101599309A (en) * | 2009-06-30 | 2009-12-09 | 西北工业大学 | SiC Schottky junction alpha radioisotope battery and its manufacturing method |
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