CN103746191A - Ultra-compact metamaterial wave-absorbing unit - Google Patents
Ultra-compact metamaterial wave-absorbing unit Download PDFInfo
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Abstract
本发明公开了一种超紧凑型超材料吸波单元,包括:第一金属薄膜,在矩形金属薄膜上设有矩形介质层,在矩形介质层上设有第二金属薄膜,在所述第一金属薄膜设有镂空,所述镂空由第一C形镂空和第二C形镂空构成且第一C形镂空和第二C形镂空呈背靠背设置,所述第二金属薄膜由第一C形金属箔和第二C形金属箔构成且第一C形金属箔和第二C形金属箔呈背靠背设置,所述镂空的形状与第二金属薄膜的形状互为相似形。本发明具有厚度极薄、吸波性能超过-15dB以上的优点。
The invention discloses an ultra-compact metamaterial wave-absorbing unit, which comprises: a first metal thin film, a rectangular dielectric layer is arranged on the rectangular metal thin film, and a second metal thin film is arranged on the rectangular dielectric layer; The metal film is provided with a hollow, the hollow is composed of a first C-shaped hollow and a second C-shaped hollow, and the first C-shaped hollow and the second C-shaped hollow are arranged back to back, and the second metal film is formed by the first C-shaped metal foil and a second C-shaped metal foil, and the first C-shaped metal foil and the second C-shaped metal foil are arranged back to back, and the shape of the hollow is similar to the shape of the second metal film. The invention has the advantages of extremely thin thickness and wave-absorbing performance over -15dB.
Description
技术领域 technical field
本发明涉及一种超紧凑型超材料吸波单元。 The invention relates to an ultra-compact metamaterial wave-absorbing unit.
背景技术 Background technique
传统的吸波材料要求要较厚的尺寸才能够获得较好的吸波效果,但是在低频段,比如频率为1-2GHz范围内,吸波材料厚度通常要超过10mm以上,这在实际应用中收到了严重限制,尤其在结构紧凑的微波电路中,更是难以使用,同时传统的吸波材料的性能也就是-10dB左右的水平,该指标在微波电路、天线阵列中常常也难以满足要求。 Traditional absorbing materials require a thicker size to obtain a better absorbing effect, but in the low frequency band, such as in the frequency range of 1-2GHz, the thickness of the absorbing material usually exceeds 10mm, which is practical in practical applications. It is severely restricted, especially in compact microwave circuits, and it is even more difficult to use. At the same time, the performance of traditional absorbing materials is only about -10dB, which is often difficult to meet the requirements in microwave circuits and antenna arrays.
为此,需要发明一种厚度极薄、吸波性能超过-15dB左右的材料,本发明正好可以满足这样的设计要求。 For this reason, it is necessary to invent a material with an extremely thin thickness and a wave-absorbing performance exceeding -15dB, and the present invention can just meet such design requirements.
发明内容 Contents of the invention
本发明提供一种厚度极薄、吸波性能超过-15dB以上的超紧凑型超材料吸波单元。 The invention provides an ultra-compact metamaterial wave-absorbing unit with extremely thin thickness and a wave-absorbing performance exceeding -15dB.
本发明采用如下技术方案: The present invention adopts following technical scheme:
一种超紧凑型超材料吸波单元,包括:第一金属薄膜,在矩形金属薄膜上设有矩形介质层,在矩形介质层上设有第二金属薄膜,在所述第一金属薄膜设有镂空,所述镂空由第一C形镂空和第二C形镂空构成且第一C形镂空和第二C形镂空呈背靠背设置,所述第二金属薄膜由第一C形金属箔和第二C形金属箔构成且第一C形金属箔和第二C形金属箔呈背靠背设置,所述镂空的形状与第二金属薄膜的形状互为相似形。 An ultra-compact metamaterial wave-absorbing unit, comprising: a first metal film, a rectangular dielectric layer is provided on the rectangular metal film, a second metal film is provided on the rectangular dielectric layer, and a rectangular dielectric layer is provided on the first metal film. hollow, the hollow is composed of a first C-shaped hollow and a second C-shaped hollow, and the first C-shaped hollow and the second C-shaped hollow are set back to back, and the second metal film is composed of the first C-shaped metal foil and the second The C-shaped metal foil is composed of the first C-shaped metal foil and the second C-shaped metal foil arranged back to back, and the shape of the hollow is similar to the shape of the second metal film.
与现有技术相比,本发明具有如下优点: Compared with prior art, the present invention has following advantage:
互为相似形的镂空与第二金属薄膜,使得第一金属薄膜与第二金属薄膜形成互补,构成互补超材料结构,这种互补超材料结构首先可以保证整个吸波单元的输入阻抗在较宽的频带内接近空气的波阻抗,从而首先克服了传统意义上是超材料吸波器阻抗匹配问题,这是超材料吸波器的首要满足条件。不同于2008年Lindy首先提出的双C形外加短微带线结构,位于第一金属薄膜的结构替代了传统的较长尺寸的短微带线结构,既可以保证整个结构中具有足够大的等效电感,同时又有效缩小了整个单元的尺寸,该结构还有利于进一步缩小整个单元厚度,也是基于同样的镂空结构带来较大的等效电感,因此,本发明的厚度小于100分之一工作波长,吸波性能超过-15dB,而常规的吸波材料厚度通常只能达到小于几十分之一工作波长,且吸波性能一般为-10dB左右。 The hollow and the second metal film are similar to each other, so that the first metal film and the second metal film are complementary to form a complementary metamaterial structure. This complementary metamaterial structure can first ensure that the input impedance of the entire absorbing unit is within a wide range. In the frequency band close to the wave impedance of air, it first overcomes the impedance matching problem of the metamaterial absorber in the traditional sense, which is the primary satisfying condition of the metamaterial absorber. Different from the double C-shaped external short microstrip line structure first proposed by Lindy in 2008, the structure located in the first metal film replaces the traditional long-sized short microstrip line structure, which can ensure that the entire structure has a large enough isotropic Effective inductance, while effectively reducing the size of the entire unit, this structure is also conducive to further reducing the thickness of the entire unit, and it is also based on the same hollow structure that brings a larger equivalent inductance. Therefore, the thickness of the present invention is less than 1/100 The working wavelength, the absorbing performance exceeds -15dB, while the thickness of conventional absorbing materials can only reach less than a few tenths of the working wavelength, and the absorbing performance is generally about -10dB.
附图说明 Description of drawings
在结合附图阅读描述后,本发明的上述目的、其它特征和优点都会更明显,其中: The above objects, other features and advantages of the present invention will be more apparent after reading the description in conjunction with the accompanying drawings, wherein:
图1是本发明的整体结构侧视图。 Fig. 1 is a side view of the overall structure of the present invention.
图2是本发明的第一金属薄膜俯视图。 Fig. 2 is a top view of the first metal thin film of the present invention.
图3是本发明第一金属薄膜的A-A剖视图。 Fig. 3 is an A-A sectional view of the first metal thin film of the present invention.
图4是本发明的矩形介质层俯视图。 Fig. 4 is a top view of the rectangular dielectric layer of the present invention.
图5是本发明的第二金属薄膜俯视图。 Fig. 5 is a top view of the second metal thin film of the present invention.
图6是本发明实施例中的吸波性能曲线。 Fig. 6 is a curve of absorbing performance in an embodiment of the present invention.
具体实施方式 Detailed ways
实施例1 Example 1
一种超紧凑型超材料吸波单元,包括:第一金属薄膜1,在矩形金属薄膜1上设有矩形介质层3,在矩形介质层3上设有第二金属薄膜4,在所述第一金属薄膜1设有镂空2,所述镂空2由第一C形镂空21和第二C形镂空22构成且第一C形镂空21和第二C形镂空22呈背靠背设置,所述第二金属薄膜4由第一C形金属箔41和第二C形金属箔42构成且第一C形金属箔41和第二C形金属箔42呈背靠背设置,所述镂空2的形状与第二金属薄膜4的形状互为相似形。第二金属薄膜4在第一金属薄膜1上的投影落入第一金属薄膜1的镂空2内部。
An ultra-compact metamaterial wave-absorbing unit, comprising: a
下面是本发明的一个优选实施例的详细内容,实施例结合附图进行说明。在可能的情况下,用于所有附图和说明的同一标号表示相同或相似的部分。该实施例是一种用于射频电路电磁隔离、微带天线阵列单元隔离。由下至上包括三层结构,最外延宽度为7.2mm,最下一层材质为矩形铜薄膜,厚度为17um,在该金属薄膜中间有一准工字形状部分被腐蚀镂空,镂空部分宽度为1.8mm;在该金属薄膜上侧为一层矩形介质材料,介电常数为60+0.24i,其厚度为0.95mm;在该介质材料上侧为一层铜薄膜,厚度为17um,该金属薄膜形状为准工字形,金属线宽为1mm,其吸波性能曲线如图5所示。显然在工作频点1.2659GHz,该结构的吸波性能超过-20dB,且其整体厚度仅有0.97mm,而对应的工作波长为239mm,相对而言,其整体厚度仅为1/246个工作波长。相比于传统的吸波材料,该新型结构具有极小的厚度和极佳的吸波性能。 The following is the detailed content of a preferred embodiment of the present invention, and the embodiment will be described with reference to the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and descriptions to refer to the same or like parts. This embodiment is used for electromagnetic isolation of radio frequency circuits and isolation of microstrip antenna array units. From bottom to top, it includes a three-layer structure, the most epitaxial width is 7.2mm, and the bottom layer is made of rectangular copper film with a thickness of 17um. In the middle of the metal film, there is a quasi-I-shaped part corroded and hollowed out. The width of the hollowed out part is 1.8mm. ; On the upper side of the metal film is a layer of rectangular dielectric material, the dielectric constant is 60+0.24i, and its thickness is 0.95mm; on the upper side of the dielectric material is a layer of copper film, the thickness is 17um, and the shape of the metal film is The quasi-I shape, the metal line width is 1mm, and its absorbing performance curve is shown in Figure 5. Obviously, at the working frequency of 1.2659GHz, the absorbing performance of this structure exceeds -20dB, and its overall thickness is only 0.97mm, while the corresponding working wavelength is 239mm. Relatively speaking, its overall thickness is only 1/246 working wavelength . Compared with traditional absorbing materials, the new structure has extremely small thickness and excellent absorbing performance.
本发明可以组合多个这样的吸波单元可以构建厚度很薄的吸波材料,通常这样的吸波材料工作范围在0.5GHz到150GHz之间,可以广泛的用于微波器件内部的电磁隔离、隐身等。 The present invention can combine a plurality of such absorbing units to construct a thin absorbing material. Usually, the operating range of such absorbing materials is between 0.5GHz and 150GHz, and can be widely used for electromagnetic isolation and stealth inside microwave devices. wait.
尽管本发明已经参照附图和优选实施例进行了说明,但是,对于本领域的技术人员来说,本发明可以有各种更改和变化。本发明的各种更改、变化,和等同物有所附的权利要求书的内容涵盖。 Although the present invention has been described with reference to the accompanying drawings and preferred embodiments, various modifications and changes will occur to those skilled in the art. Various modifications, changes, and equivalents of the present invention are covered by the content of the appended claims.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104810575A (en) * | 2015-04-14 | 2015-07-29 | 哈尔滨理工大学 | Terahertz tuning device based on graphene |
| CN110366361A (en) * | 2019-08-06 | 2019-10-22 | 集美大学 | A kind of wave absorbing device based on super surface |
| CN111293440A (en) * | 2020-01-27 | 2020-06-16 | 浙江大学 | Ultrathin absorbers based on deep subwavelength slits |
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| CN102843899A (en) * | 2012-08-03 | 2012-12-26 | 深圳光启创新技术有限公司 | Wave absorbing metamaterial and device |
| CN103181025A (en) * | 2010-04-12 | 2013-06-26 | 塔夫茨大学 | Silk electronic components |
| CN103259097A (en) * | 2013-04-19 | 2013-08-21 | 电子科技大学 | Terahertz metamaterial unit structure and preparation, adjusting and control method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103181025A (en) * | 2010-04-12 | 2013-06-26 | 塔夫茨大学 | Silk electronic components |
| CN102843899A (en) * | 2012-08-03 | 2012-12-26 | 深圳光启创新技术有限公司 | Wave absorbing metamaterial and device |
| CN103259097A (en) * | 2013-04-19 | 2013-08-21 | 电子科技大学 | Terahertz metamaterial unit structure and preparation, adjusting and control method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810575A (en) * | 2015-04-14 | 2015-07-29 | 哈尔滨理工大学 | Terahertz tuning device based on graphene |
| CN110366361A (en) * | 2019-08-06 | 2019-10-22 | 集美大学 | A kind of wave absorbing device based on super surface |
| CN111293440A (en) * | 2020-01-27 | 2020-06-16 | 浙江大学 | Ultrathin absorbers based on deep subwavelength slits |
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Application publication date: 20140423 |
