CN104094389B - 光致载流子寿命测量装置及光致载流子寿命测量方法 - Google Patents

光致载流子寿命测量装置及光致载流子寿命测量方法 Download PDF

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Publication number
CN104094389B
CN104094389B CN201280062241.8A CN201280062241A CN104094389B CN 104094389 B CN104094389 B CN 104094389B CN 201280062241 A CN201280062241 A CN 201280062241A CN 104094389 B CN104094389 B CN 104094389B
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carrier
semiconductor substrate
carrier lifetime
light
span
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CN104094389A (zh
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鲛岛俊之
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Tokyo University of Agriculture
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Tokyo University of Agriculture
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N22/00—Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0095—Semiconductive materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Electromagnetism (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201280062241.8A 2011-12-16 2012-12-11 光致载流子寿命测量装置及光致载流子寿命测量方法 Expired - Fee Related CN104094389B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011276215 2011-12-16
JP2011-276215 2011-12-16
JP2012253129A JP6052536B2 (ja) 2011-12-16 2012-11-19 光誘起キャリヤライフタイム測定装置及び光誘起キャリヤライフタイム測定方法
JP2012-253129 2012-11-19
PCT/JP2012/082038 WO2013089088A1 (ja) 2011-12-16 2012-12-11 光誘起キャリヤライフタイム測定装置及び光誘起キャリヤライフタイム測定方法

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CN104094389A CN104094389A (zh) 2014-10-08
CN104094389B true CN104094389B (zh) 2016-09-07

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US (1) US10126253B2 (2)
JP (1) JP6052536B2 (2)
CN (1) CN104094389B (2)
WO (1) WO2013089088A1 (2)

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Publication number Priority date Publication date Assignee Title
JP2016157931A (ja) * 2015-02-20 2016-09-01 国立大学法人東京農工大学 光誘起キャリヤライフタイム測定方法及び光誘起キャリヤライフタイム測定装置
JP6382747B2 (ja) * 2015-02-26 2018-08-29 京セラ株式会社 過剰少数キャリアの実効ライフタイム測定方法および過剰少数キャリアの実効ライフタイム測定装置
JP6826007B2 (ja) * 2017-06-29 2021-02-03 京セラ株式会社 光誘起キャリアのバルクキャリアライフタイムの測定方法および測定装置
CN107591340A (zh) * 2017-08-01 2018-01-16 惠科股份有限公司 一种半导体的测试方法和测试装置
CN110470965B (zh) * 2019-07-09 2020-07-28 同济大学 一种半导体表面态载流子寿命测试方法
CN111128783B (zh) * 2019-12-30 2024-07-16 南方科技大学 一种少数载流子寿命的纵向分布测试系统和方法
FR3118283B1 (fr) * 2020-12-18 2023-11-24 Commissariat Energie Atomique Procédé de détermination de la durée de vie volumique des porteurs de charge d'un substrat et dispositif associé
JP7249395B1 (ja) 2021-11-10 2023-03-30 株式会社Sumco 半導体試料の評価方法、半導体試料の評価装置および半導体ウェーハの製造方法
JP7713198B2 (ja) * 2022-09-20 2025-07-25 株式会社Sumco 半導体試料の評価方法
EP4672307A1 (en) * 2023-02-24 2025-12-31 Sumco Corporation METHOD AND DEVICE FOR EVALUATING SEMICONDUCTOR SAMPLES AND METHOD FOR MANUFACTURING SEMICONDUCTOR SLICES

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4949034A (en) * 1988-09-07 1990-08-14 Mitsubishi Kinzoku Kabushiki Kaisha Method for contactless evaluation of characteristics of semiconductor wafers and devices
US5177351A (en) * 1988-08-23 1993-01-05 Lagowski Jacek J Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements
JP2011082312A (ja) * 2009-10-06 2011-04-21 Kobe Steel Ltd 半導体キャリア寿命測定装置および該方法
WO2011099191A1 (ja) * 2010-02-15 2011-08-18 国立大学法人東京農工大学 光誘起キャリアライフタイム測定方法、光入射効率測定方法、光誘起キャリアライフタイム測定装置、および光入射効率測定装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2889307B2 (ja) * 1990-03-26 1999-05-10 株式会社東芝 ▲ｉｖ▼族半導体のキャリアライフタイム測定法
US7187186B2 (en) 2004-03-22 2007-03-06 Kla-Tencor Technologies Corp. Methods and systems for determining one or more properties of a specimen
JP4441381B2 (ja) * 2004-10-29 2010-03-31 三菱電機株式会社 表面キャリア再結合速度の測定方法
KR101322591B1 (ko) * 2009-10-06 2013-10-28 가부시키가이샤 코베루코 카겐 반도체 캐리어 수명 측정 장치 및 그 방법
US8912799B2 (en) * 2011-11-10 2014-12-16 Semiconductor Physics Laboratory Co., Ltd. Accurate measurement of excess carrier lifetime using carrier decay method
US9131170B2 (en) * 2012-04-13 2015-09-08 Andreas Mandelis Method and apparatus for performing heterodyne lock-in imaging and quantitative non-contact measurements of electrical properties

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177351A (en) * 1988-08-23 1993-01-05 Lagowski Jacek J Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements
US4949034A (en) * 1988-09-07 1990-08-14 Mitsubishi Kinzoku Kabushiki Kaisha Method for contactless evaluation of characteristics of semiconductor wafers and devices
JP2011082312A (ja) * 2009-10-06 2011-04-21 Kobe Steel Ltd 半導体キャリア寿命測定装置および該方法
WO2011099191A1 (ja) * 2010-02-15 2011-08-18 国立大学法人東京農工大学 光誘起キャリアライフタイム測定方法、光入射効率測定方法、光誘起キャリアライフタイム測定装置、および光入射効率測定装置

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Publication number Publication date
WO2013089088A1 (ja) 2013-06-20
US20140303919A1 (en) 2014-10-09
JP2013145868A (ja) 2013-07-25
US10126253B2 (en) 2018-11-13
JP6052536B2 (ja) 2016-12-27
CN104094389A (zh) 2014-10-08

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