CN1057349C - 等离子体加工方法和等离子体加工装置 - Google Patents

等离子体加工方法和等离子体加工装置 Download PDF

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Publication number
CN1057349C
CN1057349C CN95120912A CN95120912A CN1057349C CN 1057349 C CN1057349 C CN 1057349C CN 95120912 A CN95120912 A CN 95120912A CN 95120912 A CN95120912 A CN 95120912A CN 1057349 C CN1057349 C CN 1057349C
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CN
China
Prior art keywords
substrate
plasma processing
voltage
electrode
good good
Prior art date
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Expired - Fee Related
Application number
CN95120912A
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English (en)
Chinese (zh)
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CN1132800A (zh
Inventor
植田重教
桥爪淳一郎
土田伸史
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Publication of CN1132800A publication Critical patent/CN1132800A/zh
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Publication of CN1057349C publication Critical patent/CN1057349C/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5093—Coaxial electrodes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photoreceptors In Electrophotography (AREA)
CN95120912A 1994-12-16 1995-12-15 等离子体加工方法和等离子体加工装置 Expired - Fee Related CN1057349C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP313391/1994 1994-12-16
JP31339194 1994-12-16
JP313391/94 1994-12-16
JP7312345A JPH08225947A (ja) 1994-12-16 1995-11-30 プラズマ処理方法及びプラズマ処理装置
JP312345/1995 1995-11-30
JP312345/95 1995-11-30

Publications (2)

Publication Number Publication Date
CN1132800A CN1132800A (zh) 1996-10-09
CN1057349C true CN1057349C (zh) 2000-10-11

Family

ID=26567128

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95120912A Expired - Fee Related CN1057349C (zh) 1994-12-16 1995-12-15 等离子体加工方法和等离子体加工装置

Country Status (6)

Country Link
US (1) US5849455A (2)
EP (1) EP0717127B1 (2)
JP (1) JPH08225947A (2)
KR (1) KR100256197B1 (2)
CN (1) CN1057349C (2)
DE (1) DE69528743T2 (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102543798A (zh) * 2007-07-12 2012-07-04 应用材料公司 处理基板边缘区域的装置与方法

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6156472A (en) * 1997-11-06 2000-12-05 Canon Kabushiki Kaisha Method of manufacturing electrophotographic photosensitive member
US6197471B1 (en) * 1998-03-25 2001-03-06 Coulter International Corp. Amorphous silicon photoreceptor and method for making same
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6596653B2 (en) 2001-05-11 2003-07-22 Applied Materials, Inc. Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
US6740601B2 (en) 2001-05-11 2004-05-25 Applied Materials Inc. HDP-CVD deposition process for filling high aspect ratio gaps
TW561515B (en) * 2001-11-30 2003-11-11 Tokyo Electron Ltd Processing device, and gas discharge suppressing member
US20040011290A1 (en) * 2002-06-10 2004-01-22 Takaharu Kondo Apparatus and process for forming deposited film
CN100495219C (zh) * 2002-12-12 2009-06-03 佳能株式会社 电摄影感光体
US6808748B2 (en) 2003-01-23 2004-10-26 Applied Materials, Inc. Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
US6958112B2 (en) 2003-05-27 2005-10-25 Applied Materials, Inc. Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation
US6903031B2 (en) 2003-09-03 2005-06-07 Applied Materials, Inc. In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
US7229931B2 (en) 2004-06-16 2007-06-12 Applied Materials, Inc. Oxygen plasma treatment for enhanced HDP-CVD gapfill
US7183227B1 (en) 2004-07-01 2007-02-27 Applied Materials, Inc. Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas
US7087536B2 (en) 2004-09-01 2006-08-08 Applied Materials Silicon oxide gapfill deposition using liquid precursors
JP4851448B2 (ja) * 2005-06-16 2012-01-11 京セラ株式会社 堆積膜形成方法、堆積膜形成装置、堆積膜およびこれを用いた感光体
CN100367829C (zh) * 2005-12-08 2008-02-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体激励方法
US20080138374A1 (en) * 2006-02-27 2008-06-12 Storey Daniel M Molecular Plasma Deposition of Bioactive Small Molecules
EP1993627A4 (en) * 2006-02-27 2012-10-10 Nanosurface Technologies Llc MOLECULAR PLASMA DEPOSITION OF COLLOIDAL MATERIALS
US8197636B2 (en) * 2007-07-12 2012-06-12 Applied Materials, Inc. Systems for plasma enhanced chemical vapor deposition and bevel edge etching
US7678715B2 (en) 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
CN101609858B (zh) * 2008-06-20 2011-06-22 福建钧石能源有限公司 薄膜沉积方法
JP5751549B2 (ja) * 2010-03-15 2015-07-22 株式会社日立国際電気 熱処理装置及び半導体の製造方法
WO2013038467A1 (ja) * 2011-09-12 2013-03-21 キヤノン株式会社 電子写真感光体の製造方法
CN102573264A (zh) * 2011-12-01 2012-07-11 西安交通大学 大气压下开放式单极射频低温等离子体发生装置
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
JP2023098526A (ja) * 2021-12-28 2023-07-10 キヤノン株式会社 活性酸素供給装置、活性酸素による処理装置及び活性酸素による処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0562623A2 (en) * 1992-03-27 1993-09-29 Canon Kabushiki Kaisha Method of manufacturing non-single crystal film and non-single crystal semiconductor device
WO1994019509A1 (fr) * 1993-02-24 1994-09-01 Tadahiro Ohmi Procede et appareil de formage d'une couche___________________

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JP2635267B2 (ja) * 1991-06-27 1997-07-30 アプライド マテリアルズ インコーポレイテッド Ｒｆプラズマ処理装置
JP3237788B2 (ja) * 1992-09-16 2001-12-10 キヤノン株式会社 非晶質シリコン薄膜の製造方法
JP3155413B2 (ja) * 1992-10-23 2001-04-09 キヤノン株式会社 光受容部材の形成方法、該方法による光受容部材および堆積膜の形成装置
WO2004083486A1 (ja) * 1993-03-23 2004-09-30 Atsushi Yamagami 超短波を用いたプラズマcvd法及び該プラズマcvd装置
JP3236111B2 (ja) * 1993-03-31 2001-12-10 キヤノン株式会社 プラズマ処理装置及び処理方法
DE4400898C1 (de) * 1994-01-14 1995-03-30 Bergische Stahlindustrie Wellenbremsscheibe für Schienenfahrzeuge
JP3372647B2 (ja) * 1994-04-18 2003-02-04 キヤノン株式会社 プラズマ処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0562623A2 (en) * 1992-03-27 1993-09-29 Canon Kabushiki Kaisha Method of manufacturing non-single crystal film and non-single crystal semiconductor device
WO1994019509A1 (fr) * 1993-02-24 1994-09-01 Tadahiro Ohmi Procede et appareil de formage d'une couche___________________

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102543798A (zh) * 2007-07-12 2012-07-04 应用材料公司 处理基板边缘区域的装置与方法

Also Published As

Publication number Publication date
JPH08225947A (ja) 1996-09-03
CN1132800A (zh) 1996-10-09
DE69528743D1 (de) 2002-12-12
KR960026129A (ko) 1996-07-22
DE69528743T2 (de) 2003-03-13
US5849455A (en) 1998-12-15
EP0717127A2 (en) 1996-06-19
KR100256197B1 (ko) 2000-05-15
EP0717127B1 (en) 2002-11-06
EP0717127A3 (2) 1996-06-26

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