CN106252425A - The method for metallising of a kind of full back contacts photovoltaic cell and battery, assembly and system - Google Patents
The method for metallising of a kind of full back contacts photovoltaic cell and battery, assembly and system Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 75
- 238000002161 passivation Methods 0.000 claims abstract description 45
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 38
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000001465 metallisation Methods 0.000 claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 239000002253 acid Substances 0.000 claims description 22
- 239000000243 solution Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 239000011574 phosphorus Substances 0.000 claims description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- -1 boron ions Chemical class 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 239000012670 alkaline solution Substances 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 239000012188 paraffin wax Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 239000007943 implant Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 210000002268 wool Anatomy 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052710 silicon Inorganic materials 0.000 abstract description 15
- 239000010703 silicon Substances 0.000 abstract description 15
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 5
- 230000006798 recombination Effects 0.000 abstract description 5
- 230000006378 damage Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000007639 printing Methods 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 17
- 238000002513 implantation Methods 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
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- H—ELECTRICITY
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- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
- H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明涉及一种全背接触光伏电池的金属化方法及电池、组件和系统。本发明的全背接触光伏电池的金属化方法，包括在N型晶体硅基体上制作全背接触结构、在背表面钝化膜上选择性开孔、背表面沉积铝、背表面印刷选择性掩膜、刻蚀未被掩膜覆盖处的铝、去除掩膜形成互相绝缘的p+铝电极和n+铝电极。其有益效果是：在金属化过程中，用点状接触取代线条状接触，减少了金属电极与掺杂硅界面处的高复合；使用低温工艺形成铝电极，不会给掺杂硅表面带来破坏；铝与掺杂硅之间有优异的金属半导体接触；由此所制电池具有更高的开路电压、填充因子和转换效率。
The invention relates to a metallization method of a full-back contact photovoltaic cell, a cell, a component and a system. The metallization method of the full back contact photovoltaic cell of the present invention includes making a full back contact structure on the N-type crystalline silicon substrate, selectively opening holes on the passivation film on the back surface, depositing aluminum on the back surface, and printing selective masking on the back surface. film, etch the aluminum not covered by the mask, and remove the mask to form mutually insulated p+aluminum electrodes and n+aluminum electrodes. Its beneficial effects are: in the metallization process, the point contact is used instead of the line contact, which reduces the high recombination at the interface between the metal electrode and the doped silicon; Destruction; excellent metal-semiconductor contact between aluminum and doped silicon; the resulting battery has higher open circuit voltage, fill factor and conversion efficiency.
Description
技术领域technical field
本发明涉及太阳能电池技术领域，具体涉及一种全背接触光伏电池的金属化方法及电池、组件和系统。The invention relates to the technical field of solar cells, in particular to a metallization method of a full back contact photovoltaic cell, a cell, a component and a system.
背景技术Background technique
太阳能电池是一种将光能转化为电能的半导体器件，较低的生产成本和较高的能量转化效率一直是太阳能电池工业追求的目标。对于目前常规太阳能电池，其p+掺杂区域接触电极和n+掺杂区域接触电极分别位于电池片的正反两面。电池的正面为受光面，正面金属接触电极的覆盖必将导致一部分入射的太阳光被金属电极所遮挡反射，造成一部分光学损失。普通晶硅太阳能电池的正面金属电极的覆盖面积在7％左右，减少金属电极的正面覆盖可以直接提高电池的能量转化效率。A solar cell is a semiconductor device that converts light energy into electrical energy. Lower production costs and higher energy conversion efficiency have always been the goals pursued by the solar cell industry. For conventional solar cells, the p+ doped region contact electrodes and the n+ doped region contact electrodes are respectively located on the front and back sides of the battery sheet. The front of the battery is the light-receiving surface, and the coverage of the metal contact electrodes on the front will inevitably cause a part of the incident sunlight to be blocked and reflected by the metal electrodes, resulting in a part of optical loss. The coverage area of the front metal electrode of an ordinary crystalline silicon solar cell is about 7%, and reducing the front coverage of the metal electrode can directly improve the energy conversion efficiency of the cell.
背接触电池，是一种将p+掺杂区域和n+掺杂区域均放置在电池背面(非受光面)的电池，该电池的受光面无任何金属电极遮挡，从而有效增加了电池片的短路电流，使电池片的能量转化效率得到提高。其背表面的金属化一般采用丝网印刷法印刷线条状的掺铝银浆和银浆，这些浆料经高温烧结后烧穿背表面钝化膜与p+和n+掺杂区域形成欧姆接触。这种金属化方法存在如下不足：金属浆料和硅表面接触区域为线条状，在接触区域有严重的复合，接触面积越大，复合越大；在高温烧结过程中金属浆料会对硅表面形成一定程度的破坏。The back contact cell is a cell in which both the p+ doped region and the n+ doped region are placed on the back of the cell (non-light-receiving surface). The light-receiving surface of the cell is not blocked by any metal electrodes, thereby effectively increasing the short-circuit current of the cell. , so that the energy conversion efficiency of the cell is improved. The metallization of the back surface generally adopts the screen printing method to print line-shaped aluminum-doped silver paste and silver paste. After high-temperature sintering, these pastes burn through the passivation film on the back surface to form ohmic contacts with p+ and n+ doped regions. This metallization method has the following disadvantages: the contact area between the metal paste and the silicon surface is linear, and there is serious recombination in the contact area. The larger the contact area, the greater the recombination; cause some degree of damage.
发明内容Contents of the invention
本发明的目的在于克服现有技术的不足，提供一种全背接触光伏电池的金属化方法及电池、组件和系统。本发明采用低温工艺形成点状接触的铝电极，克服了现有全背接触光伏电池的金属化方法的不足。The object of the present invention is to overcome the deficiencies of the prior art, and provide a metallization method for full back contact photovoltaic cells, cells, components and systems. The invention adopts a low-temperature process to form point contact aluminum electrodes, which overcomes the shortcomings of the existing metallization method of full back contact photovoltaic cells.
本发明提供的一种全背接触光伏电池的金属化方法，其技术方案是：The metallization method of a kind of full back contact photovoltaic cell provided by the present invention, its technical scheme is:
一种全背接触光伏电池的金属化方法，包括以下步骤：A metallization method for a full back contact photovoltaic cell, comprising the following steps:
(1)分别对N型晶体硅基体的前表面和背表面进行掺杂处理，在N型晶体硅基体的前表面形成n+掺杂前表面场，在N型晶体硅基体的背表面形成相互交替排列的背表面n+掺杂区域和背表面p+掺杂区域；并在N型晶体硅基体的前表面形成前表面钝化减反膜，在N型晶体硅基体的背表面形成背表面钝化膜；(1) The front surface and the back surface of the N-type crystalline silicon substrate are respectively doped, and an n+ doped front surface field is formed on the front surface of the N-type crystalline silicon substrate, and an alternating field is formed on the back surface of the N-type crystalline silicon substrate. Arranged back surface n+ doped regions and back surface p+ doped regions; and form a front surface passivation anti-reflection film on the front surface of the N-type crystalline silicon substrate, and form a back surface passivation film on the back surface of the N-type crystalline silicon substrate ;
(2)、在背表面n+掺杂区域和背表面p+掺杂区域上方开设贯穿背表面钝化膜的n+孔状阵列和p+孔状阵列；(2), above the n+ doped region on the back surface and the p+ doped region on the back surface, an n+ hole array and a p+ hole array penetrating through the passivation film on the back surface are provided;
(3)、在步骤(2)处理后的N型晶体硅基体的背表面沉积铝层；(3), depositing an aluminum layer on the back surface of the N-type crystalline silicon substrate treated in step (2);
(4)、在孔状阵列上印刷耐酸掩膜，将N型晶体硅基体放入酸性刻蚀液中，去除未被耐酸掩膜覆盖区域的铝层，形成相互电绝缘的p+铝电极和n+铝电极；(4) Print an acid-resistant mask on the hole-shaped array, put the N-type crystalline silicon substrate into an acidic etching solution, remove the aluminum layer in the area not covered by the acid-resistant mask, and form mutually electrically insulated p+ aluminum electrodes and n+ aluminum electrodes;
(5)、将步骤(4)处理后的N型晶体硅基体放入碱性溶液中，去除耐酸掩膜，得到全背接触光伏电池。(5) Put the N-type crystalline silicon substrate treated in step (4) into an alkaline solution, remove the acid-resistant mask, and obtain a full-back contact photovoltaic cell.
其中，步骤(1)中，对N型晶体硅基体的背表面进行掺杂处理的方法是：首先在N型晶体硅基体的背表面注入剂量为0.5×1015cm-2～3×1015cm-2的硼离子，然后在N型晶体硅基体的背表面选择性的注入磷离子，磷离子的注入剂量为3×1015cm-2～8×1015cm-2。Wherein, in step (1), the method for doping the back surface of the N-type crystalline silicon substrate is: firstly, the implantation dose on the back surface of the N-type crystalline silicon substrate is 0.5×10 15 cm −2 to 3×10 15 cm -2 of boron ions, and then selectively implant phosphorus ions on the back surface of the N-type crystalline silicon substrate, and the implantation dose of phosphorus ions is 3×10 15 cm -2 to 8×10 15 cm -2 .
其中，注入磷离子时，在N型晶体硅基体的背表面和离子束之间设置掩膜，掩膜上设置线条状开口，线条状开口宽50～400μm。Wherein, when implanting phosphorus ions, a mask is set between the back surface of the N-type crystalline silicon substrate and the ion beam, and line-shaped openings are set on the mask, and the width of the line-shaped openings is 50-400 μm.
其中，步骤(1)中，对N型晶体硅基体的前表面进行掺杂处理的方法是：在N型晶体硅基体的前表面注入剂量为1×1015cm-2～4×1015cm-2的磷离子。Wherein, in step (1), the method of doping the front surface of the N-type crystalline silicon substrate is: the implantation dose on the front surface of the N-type crystalline silicon substrate is 1×10 15 cm -2 ~ 4×10 15 cm -2 phosphorus ions.
其中，步骤(1)中，将掺杂完成后的N型晶体硅基体进行退火处理，退火的峰值温度为800～1100℃，退火时间为30～200min，环境气源为N2和O2。Wherein, in step (1), the doped N-type crystalline silicon substrate is annealed, the annealing peak temperature is 800-1100° C., the annealing time is 30-200 min, and the ambient gas source is N 2 and O 2 .
其中，在制备前表面钝化减反膜和背表面钝化膜之前将N型晶体硅基体放入清洗机中进行清洗、烘干处理；Wherein, before preparing the front surface passivation anti-reflection film and the back surface passivation film, the N-type crystalline silicon substrate is put into a cleaning machine for cleaning and drying;
前表面钝化减反膜的制备方法是：在N型晶体硅基体的前表面利用PECVD设备先沉积一层厚度为5～30nm的SiOx介质膜，然后在SiOx介质膜上再沉积一层厚度为40～80nm的SiNx介质膜；The preparation method of the passivation anti-reflection film on the front surface is as follows: a layer of SiOx dielectric film with a thickness of 5-30nm is deposited on the front surface of the N-type crystalline silicon substrate using PECVD equipment, and then a layer of SiOx dielectric film is deposited on the SiOx dielectric film. SiN x dielectric film with a thickness of 40-80nm;
背表面钝化膜的制备方法是：在N型晶体硅基体的背表面用PECVD设备或ALD设备沉积一层厚度为4～20nm的AlOx介质膜，然后在AlOx介质膜的表面再沉积一层厚度为20～50nm的SiNx介质膜。The preparation method of the passivation film on the back surface is: on the back surface of the N-type crystalline silicon substrate, use PECVD equipment or ALD equipment to deposit a layer of AlO x dielectric film with a thickness of 4-20nm, and then deposit a layer of AlO x dielectric film on the surface of the AlO x dielectric film. A SiN x dielectric film with a layer thickness of 20-50nm.
其中，步骤(2)为使用激光器在N型晶体硅基体的背表面开设贯穿钝化膜的p+孔状阵列和n+孔状阵列。Wherein, step (2) is to use a laser to open a p+ hole array and an n+ hole array penetrating through the passivation film on the back surface of the N-type crystalline silicon substrate.
其中，步骤(3)中，沉积铝层的方法为物理气相沉积法，铝层的厚度为2～5μm。Wherein, in step (3), the method for depositing the aluminum layer is physical vapor deposition, and the thickness of the aluminum layer is 2-5 μm.
其中，步骤(4)中，耐酸掩膜是石蜡或者耐酸树脂，耐酸掩膜的宽度大于或者等于p+孔状阵列中的孔直径和n+孔状阵列中的孔直径；Wherein, in step (4), the acid-resistant mask is paraffin or acid-resistant resin, and the width of the acid-resistant mask is greater than or equal to the hole diameter in the p+ hole-like array and the hole diameter in the n+ hole-like array;
酸性刻蚀液为盐酸溶液；The acid etching solution is a hydrochloric acid solution;
步骤(5)中，碱性溶液为氢氧化钾溶液、氢氧化钠溶液、四甲基氢氧化铵溶液或乙二胺溶液。In step (5), the alkaline solution is potassium hydroxide solution, sodium hydroxide solution, tetramethylammonium hydroxide solution or ethylenediamine solution.
其中，开始步骤(1)之前，对N型晶体硅基体的前表面作制绒处理；N型晶体硅基体的电阻率为0.5～15Ω·cm；N型晶体硅基体的厚度为50～300μm。Wherein, before starting step (1), the front surface of the N-type crystalline silicon substrate is textured; the resistivity of the N-type crystalline silicon substrate is 0.5-15Ω·cm; the thickness of the N-type crystalline silicon substrate is 50-300 μm.
本发明化提供了一种全背接触光伏电池，包括N型晶体硅基体，N型晶体硅基体的前表面从内到外依次为n+掺杂前表面场和前表面钝化减反膜，N型晶体硅基体的背表面从内到外依次为交替排列的背表面p+掺杂区域和背表面n+掺杂区域、背表面钝化膜和背表面电极，背表面电极包括p+电极和n+电极；所述背表面钝化膜上设置有p+孔状阵列和n+孔状阵列，所述p+电极穿过p+孔状阵列与背表面p+掺杂区域欧姆接触，所述n+电极穿过n+孔状阵列与背表面n+掺杂区域欧姆接触。The present invention provides a full back contact photovoltaic cell, comprising an N-type crystalline silicon substrate, the front surface of the N-type crystalline silicon substrate is sequentially composed of n+ doped front surface field and front surface passivation anti-reflection film from inside to outside, N The back surface of the type crystalline silicon substrate is sequentially arranged alternately from the inside to the outside with p+ doped regions on the back surface and n+ doped regions on the back surface, a passivation film on the back surface and a back surface electrode, and the back surface electrode includes a p+ electrode and an n+ electrode; The passivation film on the back surface is provided with a p+ hole array and an n+ hole array, the p+ electrode passes through the p+ hole array and is in ohmic contact with the p+ doped region on the back surface, and the n+ electrode passes through the n+ hole array It is in ohmic contact with the n+ doped region on the back surface.
其中，p+电极是p+铝电极，n+电极是n+铝电极；p+孔状阵列的孔直径为140～300μm，n+孔状阵列的孔直径为60～100μm；背表面n+掺杂区域的宽度为50～400μm。Among them, the p+ electrode is a p+ aluminum electrode, and the n+ electrode is an n+ aluminum electrode; the hole diameter of the p+ hole array is 140-300 μm, and the hole diameter of the n+ hole array is 60-100 μm; the width of the n+ doped region on the back surface is 50 ~400μm.
其中，覆盖在背表面钝化膜上的p+电极的厚度为2～5μm；覆盖在背表面钝化膜上的p+电极的宽度大于或者等于p+孔状阵列中的孔直径；Wherein, the thickness of the p+ electrode covered on the passivation film on the back surface is 2-5 μm; the width of the p+ electrode covered on the passivation film on the back surface is greater than or equal to the hole diameter in the p+ hole array;
覆盖在背表面钝化膜上的n+电极的厚度为2～5μm；覆盖在背表面钝化膜上的n+电极的宽度大于或者等于n+孔状阵列中的孔直径。The thickness of the n+ electrode covering the passivation film on the back surface is 2-5 μm; the width of the n+ electrode covering the passivation film on the back surface is greater than or equal to the hole diameter in the n+ hole array.
其中，n+掺杂前表面场为轻掺杂，方阻为50～200Ω/sqr，结深为0.2～2.0μm；背表面n+掺杂区域的方阻为20～150Ω/sqr，结深为0.3～2.0μm；背表面p+掺杂区域的方阻为20～150Ω/sqr，结深为0.3～2.0μm。Among them, the surface field before n+ doping is lightly doped, the square resistance is 50-200Ω/sqr, and the junction depth is 0.2-2.0μm; the square resistance of the n+ doped region on the back surface is 20-150Ω/sqr, and the junction depth is 0.3 ～2.0μm; the square resistance of the p+ doped region on the back surface is 20～150Ω/sqr, and the junction depth is 0.3～2.0μm.
本发明化提供了一种太阳能电池组件，包括由上至下依次设置的前层材料、封装材料、太阳能电池、封装材料、背层材料，所述太阳能电池是上述的一种全背接触光伏电池。The present invention provides a solar cell module, which includes a front layer material, an encapsulation material, a solar cell, an encapsulation material, and a back layer material arranged sequentially from top to bottom, and the solar cell is the above-mentioned full back contact photovoltaic cell .
本发明化提供了一种太阳能电池系统，包括一个以上的太阳能电池组件，其特征在于：所述太阳能电池组件是上述的太阳能电池组件。The present invention provides a solar cell system, comprising more than one solar cell assembly, characterized in that: the solar cell assembly is the above-mentioned solar cell assembly.
本发明的技术优点主要体现在：Technical advantage of the present invention is mainly reflected in:
在金属化过程中，用点状接触取代线条状接触，减少了金属电极与掺杂硅界面处的高复合；使用低温工艺形成铝电极，不会给掺杂硅表面带来破坏；铝与掺杂硅之间有优异的金属半导体接触；由此所制电池具有更高的开路电压、填充因子和转换效率。In the metallization process, point contact is used instead of line contact, which reduces the high recombination at the interface between metal electrode and doped silicon; the use of low temperature process to form aluminum electrode will not bring damage to the surface of doped silicon; aluminum and doped silicon There is an excellent metal-semiconductor contact between the heterosilicon; the resulting cell has a higher open circuit voltage, fill factor and conversion efficiency.
附图说明Description of drawings
图1为本发明实施例的全背接触光伏电池的制备方法步骤一后的电池结构截面示意图。FIG. 1 is a schematic cross-sectional view of the cell structure after step 1 of the method for manufacturing a full back contact photovoltaic cell according to an embodiment of the present invention.
图2为本发明实施例的全背接触光伏电池的制备方法步骤二后的电池结构截面示意图。2 is a schematic cross-sectional view of the cell structure after step 2 of the method for manufacturing a full back contact photovoltaic cell according to an embodiment of the present invention.
图3为本发明实施例的全背接触光伏电池的制备方法步骤三后的电池结构截面示意图。3 is a schematic cross-sectional view of the cell structure after step 3 of the method for manufacturing a full back contact photovoltaic cell according to an embodiment of the present invention.
图4为本发明实施例的全背接触光伏电池的制备方法步骤四后的电池结构截面示意图。4 is a schematic cross-sectional view of the cell structure after step 4 of the method for manufacturing a full back contact photovoltaic cell according to an embodiment of the present invention.
图5为本发明实施例的全背接触光伏电池的制备方法步骤五后的电池结构截面示意图。5 is a schematic cross-sectional view of the cell structure after step five of the method for manufacturing a full back contact photovoltaic cell according to an embodiment of the present invention.
图6为本发明实施例的全背接触光伏电池的制备方法步骤六后的电池结构截面示意图。6 is a schematic cross-sectional view of the cell structure after step six of the method for manufacturing a full back contact photovoltaic cell according to an embodiment of the present invention.
图7为本发明实施例的全背接触光伏电池的制备方法步骤七后的电池结构截面示意图。7 is a schematic cross-sectional view of the cell structure after step 7 of the method for manufacturing a full back contact photovoltaic cell according to an embodiment of the present invention.
图8为本发明实施例的全背接触光伏电池的制备方法步骤八后的电池结构截面示意图。8 is a schematic cross-sectional view of the cell structure after step eight of the method for manufacturing a full back-contact photovoltaic cell according to an embodiment of the present invention.
图9为本发明实施例的全背接触光伏电池的制备方法步骤九后的电池结构截面示意图。9 is a schematic cross-sectional view of the cell structure after step nine of the method for manufacturing a full back contact photovoltaic cell according to an embodiment of the present invention.
图10为本发明实施例的全背接触光伏电池的制备方法步骤十后的电池结构截面示意图。10 is a schematic cross-sectional view of the cell structure after step ten of the method for manufacturing a full back contact photovoltaic cell according to an embodiment of the present invention.
图11为本发明实施例的全背接触光伏电池的制备方法步骤十一后的电池结构截面示意图。11 is a schematic cross-sectional view of the cell structure after step eleven of the method for manufacturing a full back contact photovoltaic cell according to an embodiment of the present invention.
图12为本发明实施例的全背接触光伏电池的制备方法步骤七中开孔图案示意图。FIG. 12 is a schematic diagram of the opening pattern in Step 7 of the method for manufacturing a full back contact photovoltaic cell according to an embodiment of the present invention.
图13为本发明实施例的全背接触光伏电池的制备方法步骤十一后的背表面俯视图。FIG. 13 is a top view of the back surface after step eleven of the method for manufacturing a full back contact photovoltaic cell according to an embodiment of the present invention.
图14为本发明实施例的全背接触光伏电池的制备方法步骤三中使用的离子注入掩膜结构示意图。FIG. 14 is a schematic diagram of the structure of an ion implantation mask used in Step 3 of the method for manufacturing a full back-contact photovoltaic cell according to an embodiment of the present invention.
图15为本发明实施例的全背接触光伏电池的制备方法步骤九后的电池背表面局部示意图。Fig. 15 is a partial schematic diagram of the back surface of the battery after step 9 of the method for preparing the full back contact photovoltaic battery according to the embodiment of the present invention.
具体实施方式detailed description
下面将结合实施例以及附图对本发明加以详细说明，需要指出的是，所描述的实施例仅旨在便于对本发明的理解，而对其不起任何限定作用。The present invention will be described in detail below in conjunction with the embodiments and the accompanying drawings. It should be noted that the described embodiments are only intended to facilitate the understanding of the present invention, rather than limiting it in any way.
本发明涉及的孔状阵列的孔直径，孔状图案如果是圆点，则孔直径为圆的直径，如果孔状图案为非圆形的孔状(如方形、椭圆形或者其它无规则的形状图案)，则孔直径为图案内连线的最长边的长度。The hole diameter of the hole array that the present invention relates to, if the hole pattern is a dot, then the hole diameter is the diameter of a circle, if the hole pattern is a non-circular hole (such as square, ellipse or other irregular shape pattern), the diameter of the hole is the length of the longest side of the interconnection line in the pattern.
参见图1至图15所示，本实施例提供的一种全背接触光伏电池的制备方法，包括以下步骤：Referring to Fig. 1 to Fig. 15, the preparation method of a full back contact photovoltaic cell provided in this embodiment includes the following steps:
(1)、选择156mm×156mm的N型晶体硅基体10，并对N型晶体硅基体10的前表面作制绒处理；N型晶体硅基体10的电阻率为0.5～15Ω·cm，优选1～5Ω·cm；N型晶体硅基体10的厚度为50～300μm，优选80～200μm；完成本步骤后的电池结构如图1所示。(1), select the N-type crystalline silicon substrate 10 of 156mm * 156mm, and do texture processing to the front surface of the N-type crystalline silicon substrate 10; The resistivity of the N-type crystalline silicon substrate 10 is 0.5～15Ω·cm, preferably 1 ~5Ω·cm; the thickness of the N-type crystalline silicon substrate 10 is 50-300 μm, preferably 80-200 μm; the battery structure after this step is shown in FIG. 1 .
(2)、使用离子注入机在步骤(1)处理后的N型晶体硅基体10背表面进行离子注入，注入元素为硼，注入剂量为0.5×1015cm-2～3×1015cm-2，优选1.5×1015cm-2～2.5×1015cm-2。完成本步骤后的电池结构如图2所示。(2) Using an ion implanter to perform ion implantation on the back surface of the N-type crystalline silicon substrate 10 treated in step (1), the implanted element is boron, and the implantation dose is 0.5×10 15 cm −2 to 3×10 15 cm −2 2 , preferably 1.5×10 15 cm -2 to 2.5×10 15 cm -2 . The structure of the battery after this step is shown in FIG. 2 .
(3)、使用离子注入机在步骤(2)处理后的N型晶体硅基体10背表面进行选择性地离子注入，注入元素为磷，注入剂量为3×1015cm-2～8×1015cm-2，优选4×1015cm-2～6×1015cm-2。离子注入时，在N型晶体硅基体10背表面和离子束之间设置掩膜50。掩膜50的材质为石墨，如图14所示，掩膜50上设置线条状开口51，线条状开口51宽50～400μm，优选100～300μm。掩膜50上的开口区域对应的N型晶体硅基体10背表面注入有硼和磷，其他区域则仅为硼注入。控制磷注入的剂量大于硼注入的剂量。完成本步骤后的电池结构如图3所示。(3) Using an ion implanter to perform selective ion implantation on the back surface of the N-type crystalline silicon substrate 10 treated in step (2), the implanted element is phosphorus, and the implantation dose is 3×10 15 cm −2 to 8×10 15 cm -2 , preferably 4×10 15 cm -2 to 6×10 15 cm -2 . During ion implantation, a mask 50 is set between the back surface of the N-type crystalline silicon substrate 10 and the ion beam. The material of the mask 50 is graphite. As shown in FIG. 14 , the mask 50 is provided with linear openings 51 with a width of 50-400 μm, preferably 100-300 μm. The back surface of the N-type crystalline silicon substrate 10 corresponding to the opening area on the mask 50 is implanted with boron and phosphorus, and only boron is implanted in other areas. The dose of phosphorus implantation is controlled to be larger than the dose of boron implantation. The structure of the battery after this step is shown in FIG. 3 .
(4)、使用离子注入机在步骤(3)处理后的N型晶体硅基体10前表面进行离子注入，注入元素为磷，注入剂量为1×1015cm-2～4×1015cm-2，优选1×1015cm-2～3×1015cm-2。完成本步骤后的电池结构如图4所示。(4) Using an ion implanter to perform ion implantation on the front surface of the N-type crystalline silicon substrate 10 treated in step (3), the implanted element is phosphorus, and the implantation dose is 1×10 15 cm −2 to 4×10 15 cm −2 2 , preferably 1×10 15 cm -2 to 3×10 15 cm -2 . The battery structure after completing this step is shown in FIG. 4 .
(5)、将步骤(4)处理后的N型晶体硅基体10放入退火炉中进行高温退火处理，退火的峰值温度为800～1100℃，优选为850～1000℃，退火时间为30～200min，优选为60～200min，环境气源优选为N2和O2。退火完成后即形成n+掺杂前表面场13、背表面n+掺杂区域12和背表面p+掺杂区域11。其中掩膜50上的开口对应的N型晶体硅基体10背表面区域为背表面n+掺杂区域12，这是因为该区域注入的磷的剂量大于硼的剂量，同时硼在硅中的固溶度要低于磷，所以退火后该区域为n+掺杂。背表面其他区域为背表面p+掺杂区域11。其中n+掺杂前表面场13为轻掺杂，其方阻为50～200Ω/sqr，结深为0.2～2.0μm。背表面n+掺杂区域12的方阻为20～150Ω/sqr，结深为0.3～2.0μm。背表面p+掺杂区域11的方阻为20～150Ω/sqr，结深为0.3～2.0μm。完成本步骤后的电池结构如图5所示。(5), put the N-type crystalline silicon substrate 10 processed in step (4) into an annealing furnace for high-temperature annealing treatment, the peak annealing temperature is 800-1100° C., preferably 850-1000° C., and the annealing time is 30-1000° C. 200 min, preferably 60-200 min, and the ambient gas source is preferably N 2 and O 2 . After the annealing is completed, the n+ doped front surface field 13 , the back surface n+ doped region 12 and the back surface p+ doped region 11 are formed. Wherein the opening on the mask 50 corresponds to the N-type crystalline silicon substrate 10 back surface area is the back surface n+ doped area 12, this is because the dose of phosphorus implanted in this area is greater than the dose of boron, while the solid solution of boron in silicon The degree is lower than that of phosphorus, so the region is n+ doped after annealing. Other regions on the back surface are p+ doped regions 11 on the back surface. Wherein the surface field 13 is lightly doped before n+ doping, its square resistance is 50-200Ω/sqr, and the junction depth is 0.2-2.0 μm. The square resistance of the n+ doped region 12 on the back surface is 20-150 Ω/sqr, and the junction depth is 0.3-2.0 μm. The square resistance of the p+ doped region 11 on the back surface is 20-150 Ω/sqr, and the junction depth is 0.3-2.0 μm. The battery structure after this step is shown in FIG. 5 .
(6)、将步骤(5)处理后的N型晶体硅基体10放入清洗机中，清洗硅片表面并进行烘干。然后在N型晶体硅基体10的前表面用PECVD(等离子增强化学气相沉积)的方式先沉积一层厚度为5～30nm的SiOx介质膜20，然后在SiOx介质膜20上再沉积一层SiNx介质膜22，膜的厚度为40～80nm；在N型晶体硅基体10的背表面用PECVD或ALD(原子层沉积)的方式制作一层AlOx介质膜21，膜的厚度为4～20nm，然后在AlOx介质膜21的表面再沉积一层SiNx膜23，SiNx膜23的厚度为20～50nm。硅基体前表面的SiOx介质膜20与SiNx介质膜22的作用为硅基体前表面的钝化和光的减反射；硅基体背表面的AlOx介质膜21与SiNx介质膜23的作用为硅基体背表面的钝化，同时SiNx介质膜23也起到了对AlOx介质膜21的保护作用。完成本步骤后的电池结构如图6所示。(6) Put the N-type crystalline silicon substrate 10 treated in step (5) into a cleaning machine, clean the surface of the silicon wafer and dry it. Then on the front surface of the N-type crystalline silicon substrate 10, a layer of SiO x dielectric film 20 with a thickness of 5-30 nm is first deposited by PECVD (plasma enhanced chemical vapor deposition), and then a layer of SiO x dielectric film 20 is deposited on the SiO x dielectric film 20. SiN x dielectric film 22, the thickness of the film is 40-80nm; on the back surface of the N-type crystalline silicon substrate 10, a layer of AlO x dielectric film 21 is made by PECVD or ALD (atomic layer deposition), and the thickness of the film is 4-80 nm. 20 nm, and then deposit a layer of SiN x film 23 on the surface of the AlO x dielectric film 21, the thickness of the SiN x film 23 is 20-50 nm. The SiO x dielectric film 20 and the SiN x dielectric film 22 on the front surface of the silicon substrate act as passivation on the front surface of the silicon substrate and anti-reflection of light; the AlO x dielectric film 21 and the SiN x dielectric film 23 on the back surface of the silicon substrate function as The back surface of the silicon substrate is passivated, and the SiN x dielectric film 23 also protects the AlO x dielectric film 21 . The structure of the battery after this step is shown in FIG. 6 .
(7)、使用激光器在背表面钝化膜上开孔，确保其完全打开背表面AlOx介质膜21和SiNx介质膜23而不破坏背表面n+掺杂区域和p+掺杂区域，开孔的图案可以根据实际生产情况设定，例如可以是圆孔或者方孔，本步骤仅作出优选的示例性说明。本实施例中，开孔图案如图12所示，其中p+掺杂区域开孔图案31为p+孔状阵列，孔直径为140～300μm，n+掺杂区域的开孔图案32为n+孔状阵列，孔直径为60～100μm。完成本步骤后的电池结构如图7所示。(7), use a laser to make holes on the passivation film on the back surface to ensure that it fully opens the back surface AlO x dielectric film 21 and SiN x dielectric film 23 without destroying the back surface n+ doped region and p+ doped region, opening holes The pattern can be set according to the actual production situation, for example, it can be a round hole or a square hole, and this step is only a preferred exemplary illustration. In this embodiment, the opening pattern is as shown in Figure 12, wherein the opening pattern 31 in the p+ doped region is a p+ hole-like array with a hole diameter of 140-300 μm, and the opening pattern 32 in the n+ doped region is an n+ hole-like array , The hole diameter is 60-100 μm. The battery structure after completing this step is shown in FIG. 7 .
(8)、在步骤(7)处理后的N型晶体硅基体10的背表面采用PVD(物理气相沉积)法沉积铝层40，铝层40的厚度为2～5μm，本实施例中，铝层40的厚度指的是覆盖在钝化膜上的铝层厚度，不包括钝化膜的厚度。完成本步骤后的电池结构如图8所示。(8) Aluminum layer 40 is deposited on the back surface of N-type crystalline silicon substrate 10 treated in step (7) by PVD (Physical Vapor Deposition). The thickness of aluminum layer 40 is 2-5 μm. In this embodiment, aluminum The thickness of layer 40 refers to the thickness of the aluminum layer overlying the passivation film, excluding the thickness of the passivation film. The battery structure after completing this step is shown in FIG. 8 .
(9)、在步骤(8)处理后的N型晶体硅基体10的背表面印刷耐酸掩膜60，耐酸掩膜60的成分为石蜡，还可以为耐酸树脂。印刷耐酸掩膜60的目的是为了保护将来要形成p+电极和n+电极的区域，而露出p+电极和n+电极之间的区域，这样可以在后续的刻蚀步骤中实现p+和n+电极之间的绝缘。为了方便说明，图15给出了完成本步骤后的电池背表面局部示意图，在背表面p+掺杂区域11和背表面n+掺杂区域12交界处一定宽度范围内为开孔区域，其余区域则被耐酸掩膜60覆盖。完成本步骤后的电池结构如图9所示。(9) Print an acid-resistant mask 60 on the back surface of the N-type crystalline silicon substrate 10 after the treatment in step (8). The acid-resistant mask 60 is composed of paraffin wax or acid-resistant resin. The purpose of printing the acid-resistant mask 60 is to protect the area where the p+ electrode and the n+ electrode will be formed in the future, and expose the area between the p+ electrode and the n+ electrode, so that the gap between the p+ electrode and the n+ electrode can be realized in the subsequent etching step. insulation. For the convenience of illustration, Fig. 15 shows a partial schematic diagram of the back surface of the battery after this step is completed, in a certain width range at the junction of the p+ doped region 11 on the back surface and the n+ doped region 12 on the back surface is an open area, and the rest of the area is Covered by an acid-resistant mask 60 . The battery structure after completing this step is shown in FIG. 9 .
(10)、将步骤(9)处理后的N型晶体硅基体10放入酸性刻蚀液中，去除未被耐酸掩膜60覆盖区域下方的铝层40，酸性刻蚀液为盐酸。刻蚀完成后，铝层40被分割为p+铝电极401和n+铝电极402，p+铝电极401与n+铝电极402之间电绝缘。完成本步骤后的电池结构如图10所示。(10) Put the N-type crystalline silicon substrate 10 treated in step (9) into an acidic etching solution to remove the aluminum layer 40 below the area not covered by the acid-resistant mask 60, and the acidic etching solution is hydrochloric acid. After the etching is completed, the aluminum layer 40 is divided into a p+ aluminum electrode 401 and an n+ aluminum electrode 402 , and the p+ aluminum electrode 401 and the n+ aluminum electrode 402 are electrically insulated. The battery structure after completing this step is shown in FIG. 10 .
(11)、将步骤(10)处理后的N型晶体硅基体10放入碱性溶液中，去除耐酸掩膜60，碱性溶液为氢氧化钾、氢氧化钠、四甲基氢氧化铵或乙二胺。完成本步骤后的背表面俯视图如图13所示，电池结构如图11所示。至此即完成本发明全背接触光伏电池的制作。(11), put the N-type crystalline silicon substrate 10 processed in step (10) into an alkaline solution, remove the acid-resistant mask 60, and the alkaline solution is potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide or Ethylenediamine. The top view of the back surface after this step is shown in FIG. 13 , and the battery structure is shown in FIG. 11 . So far, the fabrication of the full back contact photovoltaic cell of the present invention is completed.
本实施例提供的一种全背接触光伏电池的制备方法，在金属化过程中，用点状接触取代线条状接触，减少了金属电极与掺杂硅界面处的高复合；使用低温工艺形成铝电极，不会给掺杂硅表面带来破坏；铝与掺杂硅之间有优异的金属半导体接触；由此所制电池具有更高的开路电压、填充因子和转换效率。The preparation method of a full back contact photovoltaic cell provided in this example, in the metallization process, replaces the linear contact with a point contact, which reduces the high recombination at the interface between the metal electrode and the doped silicon; uses a low temperature process to form an aluminum The electrode will not bring damage to the surface of doped silicon; there is excellent metal-semiconductor contact between aluminum and doped silicon; the resulting battery has higher open circuit voltage, fill factor and conversion efficiency.
如图11所示，本实施例还提供了一种全背接触光伏电池，包括N型晶体硅基体10，N型晶体硅基体10的前表面从内到外依次为n+掺杂前表面场13和前表面钝化减反膜，N型晶体硅基体10的背表面从内到外依次为交替排列的背表面p+掺杂区域11和背表面n+掺杂区域12、背表面钝化膜和背表面电极，背表面电极包括p+电极和n+电极；所述背表面钝化膜上设置有p+孔状阵列和n+孔状阵列，所述p+电极穿过p+孔状阵列与背表面p+掺杂区域欧姆接触，所述n+电极穿过n+孔状阵列与背表面n+掺杂区域欧姆接触。p+电极是p+铝电极401，n+电极是n+铝电极402。As shown in Figure 11, this embodiment also provides a full back contact photovoltaic cell, including an N-type crystalline silicon substrate 10, the front surface of the N-type crystalline silicon substrate 10 is sequentially n+ doped front surface field 13 from the inside to the outside and the front surface passivation antireflection film, the back surface of the N-type crystalline silicon substrate 10 is alternately arranged in turn from the inside to the outside of the back surface p+ doped regions 11 and the back surface n+ doped regions 12, the back surface passivation film and the back surface The surface electrode, the back surface electrode includes a p+ electrode and an n+ electrode; the passivation film on the back surface is provided with a p+ hole array and an n+ hole array, and the p+ electrode passes through the p+ hole array and the p+ doped area on the back surface Ohmic contact, the n+ electrode is in ohmic contact with the n+ doped region on the back surface through the n+ hole array. The p+ electrode is a p+ aluminum electrode 401 , and the n+ electrode is an n+ aluminum electrode 402 .
优选地，如图11所示，覆盖在背表面钝化膜上的p+电极的厚度为2～5μm；覆盖在背表面钝化膜上的p+电极的宽度大于或者等于p+孔状阵列中的孔直径。覆盖在背表面钝化膜上的n+电极的厚度为2～5μm；覆盖在背表面钝化膜上的n+电极的宽度大于或者等于n+孔状阵列中的孔直径。p+孔状阵列的孔直径为140～300μm，n+孔状阵列的孔直径为60～100μm。Preferably, as shown in Figure 11, the thickness of the p+ electrode covering the passivation film on the back surface is 2-5 μm; the width of the p+ electrode covering the passivation film on the back surface is greater than or equal to the holes in the p+ hole array diameter. The thickness of the n+ electrode covering the passivation film on the back surface is 2-5 μm; the width of the n+ electrode covering the passivation film on the back surface is greater than or equal to the hole diameter in the n+ hole array. The hole diameter of the p+ hole array is 140-300 μm, and the hole diameter of the n+ hole array is 60-100 μm.
n+掺杂前表面场13为轻掺杂，方阻为50～200Ω/sqr，结深为0.2～2.0μm。背表面n+掺杂区域12的方阻为20～150Ω/sqr，结深为0.3～2.0μm；背表面p+掺杂区域11的方阻为20～150Ω/sqr，结深为0.3～2.0μm。背表面n+掺杂区域12的宽度为50～400μm。前表面钝化减反膜是厚度为5～30nm的SiOx介质膜20和厚度为40～80nm的SiNx介质膜22；背表面钝化膜是厚度为4～20nm的AlOx介质膜21和厚度为20～50nm的SiNx介质膜23。N型晶体硅基体10的电阻率为0.5～15Ω·cm；N型晶体硅基体10的厚度为50～300μm。The surface field 13 is lightly doped before n+ doping, the square resistance is 50-200 Ω/sqr, and the junction depth is 0.2-2.0 μm. The square resistance of the n+ doped region 12 on the back surface is 20-150Ω/sqr, and the junction depth is 0.3-2.0μm; the square resistance of the p+ doped region 11 on the back surface is 20-150Ω/sqr, and the junction depth is 0.3-2.0μm. The width of the n+ doped region 12 on the back surface is 50-400 μm. The passivation anti-reflection film on the front surface is a SiOx dielectric film 20 with a thickness of 5-30nm and a SiNx dielectric film 22 with a thickness of 40-80nm; the passivation film on the back surface is an AlOx dielectric film 21 with a thickness of 4-20nm and A SiN x dielectric film 23 with a thickness of 20-50 nm. The resistivity of the N-type crystalline silicon substrate 10 is 0.5-15 Ω·cm; the thickness of the N-type crystalline silicon substrate 10 is 50-300 μm.
本实施例还提供了一种太阳能电池组件，包括由上至下依次设置的前层材料、封装材料、太阳能电池、封装材料、背层材料，所述太阳能电池是上述的一种全背接触光伏电池。This embodiment also provides a solar cell assembly, including a front layer material, an encapsulation material, a solar cell, an encapsulation material, and a back layer material arranged in sequence from top to bottom, and the solar cell is the above-mentioned full back contact photovoltaic Battery.
本实施例还提供了一种太阳能电池系统，包括一个以上的太阳能电池组件，其特征在于：所述太阳能电池组件是上述的太阳能电池组件。This embodiment also provides a solar cell system, comprising more than one solar cell assembly, characterized in that: the solar cell assembly is the above solar cell assembly.
最后应当说明的是，以上实施例仅用以说明本发明的技术方案，而非对本发明保护范围的限制，尽管参照较佳实施例对本发明作了详细地说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的实质和范围。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting the protection scope of the present invention, although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand , the technical solution of the present invention may be modified or equivalently replaced without departing from the spirit and scope of the technical solution of the present invention.
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