CN106282973A - Apparatus and method for coating film on inner wall of pipe - Google Patents
Apparatus and method for coating film on inner wall of pipe Download PDFInfo
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- CN106282973A CN106282973A CN201510362876.5A CN201510362876A CN106282973A CN 106282973 A CN106282973 A CN 106282973A CN 201510362876 A CN201510362876 A CN 201510362876A CN 106282973 A CN106282973 A CN 106282973A
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- 238000000576 coating method Methods 0.000 title claims abstract description 41
- 239000011248 coating agent Substances 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000004888 barrier function Effects 0.000 claims abstract description 15
- 239000004020 conductor Substances 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 238000000427 thin-film deposition Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000002994 raw material Substances 0.000 abstract description 7
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
Description
技术领域technical field
本发明涉及等离子体材料表面改性技术领域,具体涉及一种用于管内壁镀膜的装置及方法。The invention relates to the technical field of plasma material surface modification, in particular to a device and method for coating the inner wall of a tube.
背景技术Background technique
实际工业应用中有大量管状工件的内表面需要改性处理,比如:油田上的输油管道、化工管道、汽车汽缸以及军事领域中枪管、炮管等。这些在恶劣环境下工作的管状工件的内壁都需要做强化处理。对管件内壁改性的常用方法主要是工业电镀,但是电镀方法沉积的膜与基底结合性差,且处理过程中产生大量会污染环境的废液。In actual industrial applications, there are a large number of inner surfaces of tubular workpieces that need to be modified, such as: oil pipelines in oil fields, chemical pipelines, automobile cylinders, and gun barrels and gun barrels in the military field. The inner walls of these tubular workpieces working in harsh environments need to be strengthened. The common method of modifying the inner wall of pipe fittings is mainly industrial electroplating, but the film deposited by the electroplating method has poor adhesion to the substrate, and a large amount of waste liquid that will pollute the environment is produced during the treatment process.
等离子体增强化学气相沉积能够很好的解决电镀方法存在的问题,已经广泛地应用到材料表面薄膜沉积领域中,在管内壁镀膜过程中也有应用。但是,均存在设备结构复杂、需要在抽真空条件下进行的问题,同时受管件结构空间有限的影响,难以实现均匀放电从而影响了镀膜的质量。Plasma-enhanced chemical vapor deposition can well solve the problems existing in the electroplating method, and has been widely used in the field of thin film deposition on the surface of materials, and it is also used in the coating process of the inner wall of the tube. However, there are problems that the equipment structure is complex and needs to be carried out under vacuum conditions. At the same time, due to the limited structural space of the pipe fittings, it is difficult to achieve uniform discharge, which affects the quality of the coating film.
介质阻挡放电是可以在较高气压、甚至在大气压下实现均匀放电的放电形式,能够应用至等离子体增强化学气相沉积过程中,但是因为介质阻挡放电需要两个电极之间的距离很小才能实现均匀放电,因此目前介质阻挡放电一般仅应用于厚度较小的物体表面薄膜沉积或改性中,而对于管状工件内表面还没有合适的介质阻挡放电的镀膜设备。Dielectric barrier discharge is a form of discharge that can achieve uniform discharge at higher pressures, even at atmospheric pressure, and can be applied to the plasma-enhanced chemical vapor deposition process, but because dielectric barrier discharge requires a small distance between the two electrodes to achieve Uniform discharge, so dielectric barrier discharge is generally only used in thin film deposition or modification on the surface of objects with a small thickness, and there is no suitable dielectric barrier discharge coating equipment for the inner surface of tubular workpieces.
发明内容Contents of the invention
本发明解决的技术问题是现有技术中采用等离子体增强化学气相沉积方法实现管内壁镀膜的装置结构复杂、需要在抽真空的条件下进行的问题,进而针对能够导电的管状工件,例如金属管,提供一种结构简单、能够在大气压下实现采用等离子体增强化学气相沉积进行管内壁镀膜的装置,本发明还提供采用上述装置进行镀膜的方法。The technical problem to be solved by the present invention is that in the prior art, the device for coating the inner wall of the tube using the plasma-enhanced chemical vapor deposition method has a complex structure and needs to be carried out under vacuum conditions, and then aims at conductive tubular workpieces, such as metal tubes To provide a device with simple structure and capable of coating the inner wall of a tube by plasma-enhanced chemical vapor deposition under atmospheric pressure. The present invention also provides a coating method using the above-mentioned device.
为了解决上述技术问题,本发明采用的技术方案如下:In order to solve the problems of the technologies described above, the technical scheme adopted in the present invention is as follows:
本发明的用于管内壁镀膜的装置,包括电源和能够插入待镀管内的内电极,所述内电极为双层结构,内层为导电体,外层为介质层,使用状态下,所述内电极设置在所述待镀管内并连接至所述电源,所述待镀管由导电材料制成亦连接至所述电源,通电状态下,在所述内电极和所述待镀管之间产生介质阻挡放电,激励气体原料产生等离子体,实现薄膜沉积。The device for coating the inner wall of a tube of the present invention includes a power supply and an inner electrode capable of being inserted into the tube to be plated. The inner electrode has a double-layer structure, the inner layer is a conductor, and the outer layer is a dielectric layer. In use, the The inner electrode is arranged in the tube to be plated and connected to the power supply. The tube to be plated is made of conductive material and is also connected to the power source. Generate dielectric barrier discharge, excite gas raw material to generate plasma, and realize thin film deposition.
优选地,所述导电体为石墨、金属或合金。Preferably, the conductor is graphite, metal or alloy.
优选地,所述内电极为圆柱形。Preferably, the inner electrode is cylindrical.
优选地,所述介质层为石英管或玻璃管。Preferably, the medium layer is a quartz tube or a glass tube.
优选地,所述电源为高频高电压电源。Preferably, the power supply is a high-frequency high-voltage power supply.
优选地,所述用于管内壁镀膜的装置还包括辅助真空设备。Preferably, the device for coating the inner wall of the tube further includes auxiliary vacuum equipment.
本发明还提供采用所述用于管内壁镀膜的装置进行管内壁镀膜的方法,包括以下步骤:The present invention also provides a method for coating the inner wall of a tube by using the device for coating the inner wall of the tube, comprising the following steps:
将所述内电极插入所述待镀管中并分别将所述内电极和所述待镀管连接至所述电源,在所述待镀管的内壁和所述内电极之间的空隙内通入气体原料,使所述内电极和所述待镀管之间产生介质阻挡放电激励气体原料产生等离子体,进而利用等离子体增强化学气相沉积方法实现薄膜沉积。Inserting the internal electrode into the tube to be plated and connecting the internal electrode and the tube to be plated to the power supply respectively, and passing through the gap between the inner wall of the tube to be plated and the internal electrode The gas raw material is injected to generate a dielectric barrier discharge between the inner electrode and the tube to be coated to excite the gas raw material to generate plasma, and then the plasma enhanced chemical vapor deposition method is used to realize film deposition.
优选地,对所述待镀管的内壁和所述内电极之间的空隙进行抽真空操作,使薄膜沉积在低气压状态下进行。Preferably, vacuuming is performed on the gap between the inner wall of the tube to be plated and the inner electrode, so that the film deposition is performed under low pressure.
本发明的有益效果如下:The beneficial effects of the present invention are as follows:
本发明的用于管内壁镀膜的装置及方法,是采用一种表面带有介质层的内电极与导电的待镀管组成介质阻挡放电结构形式,从而使发明的装置可以在高气压、甚至在大气压下实现均匀放电,进而利用高频高电压电源激励产生均匀等离子体或相对均匀等离子体,实现金属管内壁薄膜沉积。The device and method for coating the inner wall of the tube of the present invention adopt a kind of internal electrode with a dielectric layer on the surface and a conductive tube to be plated to form a dielectric barrier discharge structure, so that the invented device can be used under high pressure, even under high pressure. Uniform discharge is realized under atmospheric pressure, and then uniform plasma or relatively uniform plasma is generated by high-frequency and high-voltage power supply excitation to realize thin film deposition on the inner wall of the metal tube.
本发明的用于管内壁镀膜的装置利用介质阻挡放电的原理,提供用于管内壁镀膜的装置,对真空系统要求更低,放电装置结构简单,节约了成本,且沉积速率更高,同时由于内电极外层为不导电的介质层,例如石英或玻璃,在放电过程中不会形成电弧,装置的安全性更高。The device for coating the inner wall of the tube of the present invention utilizes the principle of dielectric barrier discharge to provide a device for coating the inner wall of the tube, which has lower requirements on the vacuum system, simple structure of the discharge device, cost saving, and higher deposition rate. The outer layer of the internal electrode is a non-conductive dielectric layer, such as quartz or glass, which will not form an arc during the discharge process, and the safety of the device is higher.
而且,本发明的用于管内壁镀膜的装置可以依据待镀管的特性调整内电极尺寸,灵活性高;可以根据镀膜材料及类型调节放电气体成分;具有镀膜均匀性好、膜基结合牢等优点。Moreover, the device for coating the inner wall of the tube of the present invention can adjust the size of the inner electrode according to the characteristics of the tube to be coated, and has high flexibility; it can adjust the composition of the discharge gas according to the coating material and type; it has the advantages of good coating uniformity, strong film base bonding, etc. advantage.
附图说明Description of drawings
图1为本发明的用于管内壁镀膜的装置在使用状态下待镀管及内电极部分的结构示意图;Fig. 1 is the structural representation of the pipe to be plated and the inner electrode part in the use state of the device for coating the inner wall of the pipe of the present invention;
图2为本发明的用于管内壁镀膜的装置在使用状态下待镀管及内电极部分的纵剖示意图;Fig. 2 is the longitudinal sectional schematic view of the pipe to be plated and the inner electrode part in the use state of the device for coating the inner wall of the pipe of the present invention;
图3为本发明的用于管内壁镀膜的装置在使用状态下待镀管及内电极部分的横剖示意图Fig. 3 is a cross-sectional schematic view of the tube to be plated and the inner electrode part in the use state of the device for coating the inner wall of the tube of the present invention
图中:In the picture:
1内电极、2待镀管、11导电体、12介质层。1 inner electrode, 2 tube to be plated, 11 conductor, 12 dielectric layer.
具体实施方式detailed description
下面结合附图和具体实施例对本发明的技术方案和有益效果进一步进行说明。The technical solutions and beneficial effects of the present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
本发明的用于管内壁镀膜的装置,包括电源和能够插入待镀管2内的内电极1,内电极1为双层结构,内层为导电体11,外层为介质层12,使用状态下,内电极1设置在待镀管2内并连接至电源,待镀管2由导电材料制成亦连接至电源,通电状态下,在内电极1和待镀管2之间产生介质阻挡放电,激励气体原料产生等离子体,实现薄膜沉积。The device for tube inner wall coating of the present invention includes a power supply and an inner electrode 1 that can be inserted into the tube 2 to be plated. The inner electrode 1 has a double-layer structure, the inner layer is a conductor 11, and the outer layer is a dielectric layer 12. Next, the inner electrode 1 is set in the tube 2 to be plated and connected to the power supply. The tube 2 to be plated is made of a conductive material and is also connected to the power source. In the energized state, a dielectric barrier discharge is generated between the inner electrode 1 and the tube 2 to be plated. , to excite the gas raw material to generate plasma to realize thin film deposition.
本发明的用于管内壁镀膜的装置中适用于任何能够导电的管状件,例如金属管或合金管。The device for coating the inner wall of a pipe of the present invention is applicable to any conductive tubular member, such as a metal pipe or an alloy pipe.
本发明中,导电体11可以选择石墨、金属或合金。In the present invention, the conductor 11 can be graphite, metal or alloy.
本发明中,可以根据待镀管2的形状、内径确定内电极的形状、尺寸,当待镀管2为圆柱形时,设置内电极1为圆柱形有利于产生更加均匀的等离子体,内电极1的尺寸依据待镀管内径确定,只要待镀管2的内壁和内电极1的内壁之间的距离能够适合实现介质层阻挡放电过程即可。In the present invention, the shape and size of the inner electrode can be determined according to the shape and inner diameter of the tube 2 to be plated. When the tube 2 to be plated is cylindrical, the inner electrode 1 is set to be cylindrical to help generate more uniform plasma. The size of 1 is determined according to the inner diameter of the tube to be plated, as long as the distance between the inner wall of the tube to be plated 2 and the inner wall of the inner electrode 1 is suitable for realizing the dielectric barrier discharge process.
本发明中,内电极1上的介质层可以是任何合适的非导电体,例如,可以是石英管或玻璃管。In the present invention, the dielectric layer on the internal electrode 1 can be any suitable non-conductor, for example, it can be a quartz tube or a glass tube.
本发明中的电源可以为高频高电压电源。The power supply in the present invention can be a high-frequency high-voltage power supply.
本发明中,可以根据镀膜要求的高低,选择是否设置辅助真空设备。In the present invention, it is possible to choose whether to set up auxiliary vacuum equipment according to the level of coating requirements.
本发明还提供采用上述用于管内壁镀膜的装置进行管内壁镀膜的方法,包括以下步骤:The present invention also provides a method for coating the inner wall of a tube by using the above-mentioned device for coating the inner wall of the tube, comprising the following steps:
将所述内电极1插入所述待镀管2中并分别将所述内电极1和所述待镀管2连接至所述电源,在所述待镀管2的内壁和所述内电极1之间的空隙内通入气体原料,使所述内电极1和所述待镀管2之间产生介质阻挡放电激励气体原料产生等离子体,进而利用等离子体增强化学气相沉积方法实现薄膜沉积。The internal electrode 1 is inserted into the tube 2 to be plated and the internal electrode 1 and the tube 2 to be plated are respectively connected to the power supply, the inner wall of the tube 2 to be plated and the internal electrode 1 The gas raw material is passed into the gap between the internal electrodes 1 and the tube 2 to be coated, so that a dielectric barrier discharge is generated between the inner electrode 1 and the tube 2 to excite the gas raw material to generate plasma, and then the plasma-enhanced chemical vapor deposition method is used to realize film deposition.
对于镀膜要求较高的情况下,可以对待镀管2的内壁和内电极1之间的空隙进行抽真空操作,使薄膜沉积在较低气压状态下进行。In the case of high coating requirements, vacuuming can be performed on the gap between the inner wall of the tube 2 to be coated and the inner electrode 1, so that the thin film deposition can be carried out under a lower pressure state.
当然在镀膜要求不高的情况下,也可以省去辅助真空设备及抽真空操作。Of course, in the case of low coating requirements, the auxiliary vacuum equipment and vacuuming operation can also be omitted.
本领域的普通技术人员将会意识到,这里所述的实施例是为了帮助读者理解本发明的原理,应被理解为本发明的保护范围并不局限于这样的特别陈述和实施例。本领域的普通技术人员科研根据本发明公开的这些技术启示做出各种不脱离本发明实质的其它各种具体变形和组合,这些变形和组合仍然在本发明的保护范围内。Those skilled in the art will appreciate that the embodiments described here are to help readers understand the principles of the present invention, and it should be understood that the protection scope of the present invention is not limited to such specific statements and embodiments. Those skilled in the art can research and make various other specific modifications and combinations based on the technical revelations disclosed in the present invention without departing from the essence of the present invention, and these modifications and combinations are still within the protection scope of the present invention.
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| CN108456862A (en) * | 2018-03-13 | 2018-08-28 | 西华大学 | Metal ion source and using method thereof |
| CN108559960A (en) * | 2018-07-18 | 2018-09-21 | 北京泰科诺科技有限公司 | A kind of insulating materials pipeline inner wall coating apparatus |
| CN108559960B (en) * | 2018-07-18 | 2023-09-22 | 北京泰科诺科技有限公司 | Insulating material pipeline inner wall coating film device |
| CN112813410A (en) * | 2020-12-28 | 2021-05-18 | 武汉普迪真空科技有限公司 | Method for depositing diamond film on WC-Co hard alloy surface |
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