CN106935467A - A kind of inductively coupled plasma processor - Google Patents
A kind of inductively coupled plasma processor Download PDFInfo
- Publication number
- CN106935467A CN106935467A CN201511012707.5A CN201511012707A CN106935467A CN 106935467 A CN106935467 A CN 106935467A CN 201511012707 A CN201511012707 A CN 201511012707A CN 106935467 A CN106935467 A CN 106935467A
- Authority
- CN
- China
- Prior art keywords
- air inlet
- gas
- inductively coupled
- coupled plasma
- inlet piece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009616 inductively coupled plasma Methods 0.000 title claims abstract description 19
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000009792 diffusion process Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 4
- 238000001514 detection method Methods 0.000 abstract description 10
- 238000005530 etching Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 4
- 238000005259 measurement Methods 0.000 abstract description 3
- 230000007774 longterm Effects 0.000 abstract description 2
- 239000012212 insulator Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 49
- 210000002381 plasma Anatomy 0.000 description 21
- 238000001020 plasma etching Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- -1 defect Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
A kind of optical detection system for inductively coupled plasma processor, be integrated into optical detection system in the gas tip of reaction chamber top insulator material window center by the present invention, while ensureing that gas is uniformly distributed, moreover it is possible to etching data of the detection positioned at central area.Ensure that transparent air inlet piece can run steadily in the long term by methods such as recessed openings, lower floor's plated films, inclined transparent air inlet piece can reduce interference of the reflected light to optical detection system produced on transparent air inlet piece, it is ensured that measurement data it is accurate.
Description
Technical field
The present invention relates to the gas tip in technical field of manufacturing semiconductors, more particularly to a kind of inductively coupled plasma processor.
Background technology
Plasma processor is widely used in semi-conductor industry, for carrying out high-precision processing such as plasma etching, chemical vapor deposition to pending substrate（CVD）Deng.Wherein inductively coupled plasma processor（ICP）Silicon etching field is widely used in because of its plasma for being obtained in that high concentration.Traditional inductively coupled plasma processor is as shown in figure 1, including a reaction chamber 100, the interior lower section of reaction chamber 100 includes pedestal 120, and the electrode in pedestal is connected by adaptation 50 with radio-frequency power supply 40.Include electrostatic chuck 121 on pedestal, pending substrate 122 is fixed on electrostatic chuck 121, edge ring 105 improves edge treated effect around electrostatic chuck and substrate by the regulation to substrate edge region electric field, air-flow or temperature.Reaction chamber top includes an insulating materials window 30, and the top of insulating materials window 30 includes inductance coil 70, and inductance coil is connected to high frequency RF power source 60 by adaptation 80.The electromagnetic field that inductance coil is produced is admitted to and plasma is formed in reaction chamber.Insulation window center uniformly sprays into reacting gas including a gas tip 90 to different zones in reaction chamber, and gas tip 90 is connected to external reaction gas source 110 by least one valve.Need to etch progress, and plasma distribution state below the method real-time monitoring using optical interference during plasma etching.But because reaction chamber middle is occupied by gas tip, optic probe 114 can only be arranged on side, although can also obtain optical data, still can problem making generation to the monitoring of central area but cannot realize.Because etch rate is in substrate surface skewness, so when pop one's head in 114 by optical signal transfer to signal processor 112 and judge target thickness material layer completed etching when, central area may already carve excessive, be also likely to be in contrast not etched also.
So needing a kind of new optical detecting gear in the industry, the optical signalling in substrate center region can be detected and the etching speed parameter in substrate center region is obtained.
The content of the invention
The problem that the present invention is solved is in inductively coupled plasma processor, optical detecting gear to be integrated on the gas tip of reaction chamber top center, the invention provides a kind of inductively coupled plasma processor, including：One reaction cavity includes around airtight space, reaction cavity is constituted：Reaction chamber body sidewall and the pedestal in reaction cavity, pedestal top includes being fixed with electrostatic chuck for fixing pending substrate, reaction cavity top includes an insulating materials window, inductance coil is arranged on insulating materials window top, one gas tip is arranged on insulating materials window lower surface central area, reacting gas is sprayed into uniform in reaction chamber, it is characterized in that the gas tip includes gas diffusion chamber and the top cover positioned at gas diffusion top of chamber, include a reacting gas air inlet and an optical emitting and reception device on the top cover
Gas diffusion chamber side wall and bottom surface include multiple gas passages, gas diffusion bottom of chamber face also includes an opening being recessed upwards, overthe openings include a transparent air inlet piece, include an at least gas passage on transparent air inlet piece, the gas in the gas diffusion chamber sprays into downwards reaction chamber by the gas passage on the transparent air inlet piece.The light that wherein optics occurs and reception device sends reaches down to substrate through the transparent air inlet piece.Gas diffusion chamber can be made up of opaque aluminum oxide, and the transparent air inlet piece silica is made.
Wherein the width of gas passage is less than 5mm, to prevent plasma from entering in gas diffusion chamber.
Transparent air inlet piece is obliquely installed and 10 degree is less than more than 2 degree with the angle of horizontal plane, is reflected into the light of optical emitting and reception device on transparent air inlet piece to reduce.
Transparent air inlet piece lower surface is coated with one layer of resistant to plasma corrosion material layer, and the resistant to plasma corrosion material thickness degree is less than 50um, to increase the decay resistance of transparent air inlet piece, moreover it is possible to which enough light can be passed through.
The opening depth of depression is more than 5mm upwards, preferably from 10mm is more than, to ensure to only have a small amount of plasma energy to be diffused into the lower surface up to transparent air inlet piece, reduces corrosion.
The A/F of the upward depression is more than 7mm, and enough areas can be irradiated to the light for ensureing optical emitting and reception device.
Brief description of the drawings
Fig. 1 is prior art plasma processor schematic diagram；
Fig. 2 is the present invention plus gas tip structure schematic diagram.
Specific embodiment
It is illustrated in figure 2 gas tip schematic diagram of the present invention, the present invention specific similar reaction cavity basic structure with the prior art shown in Fig. 1 compared with, differ primarily in that it is of the invention prior art optical detection filled 114 put be integrated into the gas tip 90 ' of insulating materials window center.Gas tip 90 ' of the present invention includes gas diffusion chamber 91, gas diffusion chamber top includes top cover 92, top cover top includes a through hole, optical emitting and reception device 93 are provided with through hole, the side wall of top cover 92 also includes an admission line 94 simultaneously, and reacting gas flows into top cover and lower section diffusion chamber 91 by admission line 94.The side wall of gas diffusion chamber 91 and bottom surface include it is multiple run through gas passage 96, during the reacting gas in gas diffusion chamber 91 uniformly spurted into plasm reaction cavity by multiple gas passages.Due to being all plasma around and under gas tip 90 ', the reacting gas being passed through in gas diffusion chamber 91 is also easy to be ignited, the diffusion cavity wall of the plasma meeting etchant gas shower nozzle lighted, while catabolite can also be deposited on inwall and bottom blocking channel 96.In order to prevent plasma diffusion from entering gas diffusion chamber, the bore of all of gas passage 96 is needed less than 5mm, and such charged particle can be collided and extinguished in crossing process neutralizing canal side wall.Gas tip needs the material such as aluminum oxide using resistant to plasma corrosion simultaneously, and surface can also coat the material layers such as more corrosion resistant yittrium oxide, to improve the service life of gas tip.Such gas diffusion chamber side wall and bottom are that opaque cannot realize penetrating for optical signal.Through hole of multiple bores less than 5mm is opened up on opaque material cannot pass through enough light（Light transmittance is less than 20%）, so being not used to etching speed detection of the invention.The present invention is provided with an opening being recessed upwards in diffusion chamber bottom centre, and open top includes the transparent air inlet piece 95 that a piece of transparent material is made, and air inlet piece lower thickness only has（1-4mm）, can be made up of the light transmittances such as silica material high.Multiple air through hole are offered simultaneously on air inlet piece, similar with the passage 96 opened up on gas diffusion chamber, for reacting gas to be sprayed into reaction chamber, but bore is smaller, is also less than 5mm.When the material meeting Timing Belt of the selection of air inlet piece 95 high transmission rate of the present invention carrys out the materials such as defect, silica intolerant to plasma etching, particularly reacting gas meeting fluorochemical；In order to ensure that the transparent air inlet piece 95 of transparency can not be too thick.Opening upwards depression of the present invention can reduce Plasma contact and corrode the chance of transparent air inlet piece, and a large amount of plasmas can extinguish during diffusing up, and part can extinguish with the side wall collision on recessed openings both sides.So be more than 5mm the need for the cup depth of opening upwards is preferable, it is optimal the need for be more than 10mm.The bore of the horizontal direction of open depression is needed more than 7mm less than 25mm to ensure optical detection scope and prevent plasma from diffusing up the transparent air inlet piece 95 of corrosion.Simultaneously because the design feature of inductively coupled plasma reactor determines that the distribution of plasma is：Concentration low outer peripheral areas concentration in central area is high, and transparent air inlet piece 95 is arranged in the present invention lower section of air inlet spray head 90 ' of central area, inherently positioned at the region that plasma concentration is relatively low, so being difficult to be corroded.In order to further improve the reliability and service life of transparent air inlet piece 95, air inlet piece 95 can be divided into the substrate 95a being made up of transparent materials such as silica of top, and resistant to plasma material layer 95b, the 95b material layer in thin layer 95a formed below thickness it is optimal the need for less than 50um ensureing transparency.Resistant to plasma material layer 95b can be by spraying or chemical vapor deposition（CVD）Or physical vapour deposition (PVD)（PVD）Resistant to plasma corrosion thin layer is formed on substrate 95a etc. mode.Because 95b material layers are very thin so will not cause to have a strong impact on to the light transmittance of the entirety of air inlet piece 95, optical measurement function of the present invention can be realized effectively.95b material layers can the material such as yittrium oxide or aluminum oxide be made, belong to common materials in the industry, will not be repeated here.
Optical emitting and reception device 93 launch reference light vertically downward in the present invention, and the plasma for sequentially passing through the lower section of transparent air inlet piece 95 reaches the pending upper surface of substrate 122.During plasma etching, pending substrate upper surface etches the figure to be formed can occur change in size, so the reflected light on surface can also occur phase place change.After the part reference light of reflection enters optical emitting and reception device 93 upwards, by the treatment of signal processor, will launch and the reference light of reflection compares the etching depth that can just detect underlying substrate.But except underlying substrate 112 can reflect, the upper and lower surface of transparent air inlet piece 95 can also reflect, and a large amount of light of reflection are also to revert to optics generation and the reception device 93 of top, interference is formed, when the intensity of interference light and the close or even stronger intensity of underlying substrate reflected light optical system can be caused to fail.Transparent air inlet piece 95 in for this present invention can be inclined being arranged in recessed openings, inclined angle is not very big, can be less than 10 degree with horizontal direction angle more than 2 degree, inwall of the reflected light back on air inlet piece to gas diffusion chamber 91 was so both can guarantee that, will not be formed compared with strong jamming light after repeatedly refraction, also can guarantee that the overwhelming majority in the incident reference light in top can reach underlying substrate through transparent air inlet piece.
Be integrated into optical detection system in gas tip 90 ' by the present invention, while ensureing that gas is uniformly distributed, moreover it is possible to etching data of the detection positioned at central area.Ensure that transparent air inlet piece can run steadily in the long term by methods such as recessed openings, lower floor's plated films, inclined transparent air inlet piece can reduce interference of the reflected light to optical detection system produced on transparent air inlet piece, it is ensured that measurement data it is accurate.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, without departing from the spirit and scope of the present invention, can be made various changes or modifications, therefore protection scope of the present invention should be defined by claim limited range.
Claims (9)
1. a kind of inductively coupled plasma processor, including：
One reaction cavity includes around airtight space, reaction cavity is constituted：Reaction chamber body sidewall and the pedestal in reaction cavity, pedestal top includes being fixed with electrostatic chuck for fixing pending substrate, reaction cavity top includes an insulating materials window, inductance coil is arranged on insulating materials window top, one gas tip is arranged on insulating materials window lower surface central area, reacting gas is sprayed into uniform in reaction chamber
It is characterized in that the gas tip includes gas diffusion chamber and the top cover positioned at gas diffusion top of chamber, a reacting gas air inlet and an optical emitting and reception device are included on the top cover,
Gas diffusion chamber side wall and bottom surface include multiple gas passages, gas diffusion bottom of chamber face also includes an opening being recessed upwards, overthe openings include a transparent air inlet piece, include an at least gas passage on transparent air inlet piece, the gas in the gas diffusion chamber sprays into downwards reaction chamber by the gas passage on the transparent air inlet piece.
2. inductively coupled plasma processor as claimed in claim 1, it is characterised in that the light that the optical emitting and reception device send reaches down to substrate through the transparent air inlet piece.
3. inductively coupled plasma processor as claimed in claim 1, it is characterised in that the width of the gas passage is less than 5mm.
4. inductively coupled plasma processor as claimed in claim 1, it is characterised in that the transparent air inlet piece is obliquely installed and 10 degree are less than more than 2 degree with the angle of horizontal plane.
5. inductively coupled plasma processor as claimed in claim 1, it is characterised in that the transparent air inlet piece lower surface is coated with one layer of resistant to plasma corrosion material layer, the resistant to plasma corrosion material thickness degree is less than 50um.
6. inductively coupled plasma processor as claimed in claim 1, it is characterised in that the gas diffusion chamber is made up of opaque aluminum oxide, and the transparent air inlet piece silica is made.
7. inductively coupled plasma processor as claimed in claim 1, it is characterised in that the opening depth of the upward depression is more than 5mm.
8. inductively coupled plasma processor as claimed in claim 7, it is characterised in that the opening depth of the upward depression is more than 10mm.
9. inductively coupled plasma processor as claimed in claim 1, it is characterised in that the A/F of the upward depression is more than 7mm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511012707.5A CN106935467B (en) | 2015-12-31 | 2015-12-31 | A kind of inductively coupled plasma processor |
| TW105135252A TWI618140B (en) | 2015-12-31 | 2016-10-31 | Inductively coupled plasma processor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511012707.5A CN106935467B (en) | 2015-12-31 | 2015-12-31 | A kind of inductively coupled plasma processor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106935467A true CN106935467A (en) | 2017-07-07 |
| CN106935467B CN106935467B (en) | 2018-11-06 |
Family
ID=59457756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201511012707.5A Active CN106935467B (en) | 2015-12-31 | 2015-12-31 | A kind of inductively coupled plasma processor |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106935467B (en) |
| TW (1) | TWI618140B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109148316A (en) * | 2018-09-07 | 2019-01-04 | 北京智芯微电子科技有限公司 | For accurately determining the monitoring method of plasma etching machine etching chip terminal |
| CN113130285A (en) * | 2019-12-31 | 2021-07-16 | 江苏鲁汶仪器有限公司 | Ceramic air inlet and radio frequency cleaning device |
| CN113707524A (en) * | 2020-05-20 | 2021-11-26 | 江苏鲁汶仪器有限公司 | Prevent palirrhea air intake structure of plasma |
| CN116453925A (en) * | 2023-06-16 | 2023-07-18 | 通威微电子有限公司 | Magnetic control enhanced plasma polishing device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6129807A (en) * | 1997-10-06 | 2000-10-10 | Applied Materials, Inc. | Apparatus for monitoring processing of a substrate |
| JP4055880B2 (en) * | 1999-06-02 | 2008-03-05 | 東京エレクトロン株式会社 | Plasma processing apparatus, plasma processing monitoring window member, and electrode plate for plasma processing apparatus |
| US7833381B2 (en) * | 2005-08-18 | 2010-11-16 | David Johnson | Optical emission interferometry for PECVD using a gas injection hole |
| US8009938B2 (en) * | 2008-02-29 | 2011-08-30 | Applied Materials, Inc. | Advanced process sensing and control using near infrared spectral reflectometry |
| CN101585019B (en) * | 2008-05-19 | 2013-03-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing device and nozzle structure used in same |
| JP5385875B2 (en) * | 2010-08-26 | 2014-01-08 | 東京エレクトロン株式会社 | Plasma processing apparatus and optical monitor apparatus |
| US9162236B2 (en) * | 2012-04-26 | 2015-10-20 | Applied Materials, Inc. | Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus |
| US20150118832A1 (en) * | 2013-10-24 | 2015-04-30 | Applied Materials, Inc. | Methods for patterning a hardmask layer for an ion implantation process |
-
2015
- 2015-12-31 CN CN201511012707.5A patent/CN106935467B/en active Active
-
2016
- 2016-10-31 TW TW105135252A patent/TWI618140B/en active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109148316A (en) * | 2018-09-07 | 2019-01-04 | 北京智芯微电子科技有限公司 | For accurately determining the monitoring method of plasma etching machine etching chip terminal |
| CN113130285A (en) * | 2019-12-31 | 2021-07-16 | 江苏鲁汶仪器有限公司 | Ceramic air inlet and radio frequency cleaning device |
| CN113707524A (en) * | 2020-05-20 | 2021-11-26 | 江苏鲁汶仪器有限公司 | Prevent palirrhea air intake structure of plasma |
| CN116453925A (en) * | 2023-06-16 | 2023-07-18 | 通威微电子有限公司 | Magnetic control enhanced plasma polishing device |
| CN116453925B (en) * | 2023-06-16 | 2023-08-25 | 通威微电子有限公司 | Magnetic control enhanced plasma polishing device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201724258A (en) | 2017-07-01 |
| TWI618140B (en) | 2018-03-11 |
| CN106935467B (en) | 2018-11-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106935467A (en) | A kind of inductively coupled plasma processor | |
| TWI571909B (en) | Semiconductor manufacturing system including deposition equipment | |
| US8343308B2 (en) | Ceiling plate and plasma process apparatus | |
| JP2023169252A (en) | Method and apparatus for real-time monitoring of plasma chamber wall condition | |
| US20060196420A1 (en) | High density plasma chemical vapor deposition apparatus | |
| KR102453210B1 (en) | Plasma probe device, plasma processing apparatus, and control method | |
| US20120192953A1 (en) | Plasma processing apparatus and plasma processing method | |
| KR101689015B1 (en) | Liner assembly and wafer treatment equipment having the same | |
| TW201439354A (en) | Evaporation deposition apparatus | |
| US20170084426A1 (en) | Apparatus for determining process rate | |
| US20130000847A1 (en) | Plasma processing apparatus | |
| TW201946187A (en) | Support ring with plasma spray coating | |
| US20150235878A1 (en) | Semiconductor Manufacturing Apparatus and Method of Manufacturing Semiconductor Device | |
| CN109961999A (en) | A kind of gas spray and the method for preventing accumulation of polymer | |
| KR20150144278A (en) | Determining presence of conductive film on dielectric surface of reaction chamber | |
| KR101227571B1 (en) | Gas injection Assembly and apparatus for processing substrate | |
| KR101297264B1 (en) | Plasma reactor having dual inductively coupled plasma source | |
| TWI664313B (en) | Showerhead and vacuum processing apparatus | |
| CN107546093B (en) | The plasma treatment appts of gas injection apparatus, its production method and its application | |
| KR101139821B1 (en) | Gas nozzle for improved spouting efficiency and plasma reactor having the same | |
| JP4327319B2 (en) | Hinagata shower head and vacuum processing apparatus using the shower head | |
| US20250218752A1 (en) | Substrate processing apparatus, substate processing method using the same, and method of manufacturing semiconductor device using the same | |
| CN107306473A (en) | A kind of semiconductor processing device and the method for handling substrate | |
| US6916512B2 (en) | Method and device for coating substrates | |
| KR20120024264A (en) | Etching system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CP01 | Change in the name or title of a patent holder |