CN106947997A

CN106947997A - It is used for the intensifier of the electrolyte flow power of efficient mass transfer in electroplating process

Info

Publication number: CN106947997A
Application number: CN201610966878.XA
Authority: CN
Inventors: 史蒂文·T·迈耶; 布莱恩·L·巴卡柳; 傅海英; 托马斯·波努司瓦米; 希尔顿·迪艾斯·卡米罗; 罗伯特·拉什; 大卫·W·波特
Original assignee: Novellus Systems Inc
Current assignee: Novellus Systems Inc
Priority date: 2012-12-12
Filing date: 2013-12-12
Publication date: 2017-07-14
Anticipated expiration: 2033-12-12
Also published as: CN103866374B; TW201437439A; KR20140076524A; CN106947997B; CN103866374A; JP6494910B2; TWI640661B; TWI606154B; TW201802299A; JP2014118634A; KR102214898B1

Abstract

The present invention relates in electroplating process for efficient mass transfer electrolyte flow power intensifier, embodiments of the present invention are related to for by the method and apparatus on one or more electroplating materials to substrate.In many cases, the material is metal and the substrate is semiconductor wafer, but these embodiments are not limited thereto.Generally, embodiments described herein uses the plate construction crossing current manifold of the trough of belt close to substrate, and the crossing current manifold is limited by the bottom of plate of the trough of belt, the top of substrate and the side for confinement ring of flowing over.During plating, passage and enter crossing current manifold laterally through the crossing current side entrance being arranged in the one side of the crossing current confinement ring that fluid is upward through in the plate of the trough of belt.Flow path merges in crossing current manifold and exited in crossing current outlet, and crossing current outlet is arranged on the opposite of crossing current entrance.These flow paths merged cause plating uniformity to improve.

Description

It is used for the intensifier of the electrolyte flow power of efficient mass transfer in electroplating process

It is on December 12nd, 2013 applying date that the application, which is, and Application No. 201310683415.9 applies for that artificial promise hair system is public Department, the division Shen of the patent application of entitled " intensifier for being used for the electrolyte flow power of efficient mass transfer in electroplating process " Please.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims " ENHANCEMENT OF ELECTROLYTE submit, entitled on December 12nd, 2012 HYDRODYNAMICS FOR EFFICIENT MASS TRANSFER DURING ELECTROPLATING " the interim Shen in the U.S. Please No.61/736, the rights and interests of 499 [agency file number LAMRP015P] priority, by reference to for all purposes will The provisional application is incorporated by herein.In addition, the application be submit on May 13rd, 2013, entitled " CROSS FLOW MANIFOLD FOR ELECTROPLATING APPARATUS " U.S. Patent application No.13/893,242 [agency's cases Reel number NOVLP367X1] further part, U.S. Patent application No.13/893,242 be submit on June 29th, 2011, title For " CONTROL OF ELECTROLYTE HYDRODYNAMICS FOR EFFICIENT MASS TRANSFER DURING ELECTROPLATING " U.S. Patent application No.13/172,642 [agency file number NOVLP367] further part, U.S. Patent application No.13/172,642 require that " FLOW DIVERTERS AND submit, entitled on October 21st, 2010 FLOW SHAPING PLATES FOR ELECTROPLATING CELLS " U.S. Provisional Application No.61/405,608 [agencies Mechanism file number NOVLP396P], " the HIGH FLOW RATE PROCESSING FOR submit, entitled on the 18th of August in 2010 WAFER LEVEL PACKAGING " U.S. Provisional Application No.61/374,911 [agency file number NOVLP367P], with And " ANGLED HRVA " U.S. Provisional Application No.61/361,333 [agencies submit, entitled on July 2nd, 2010 File number NOVLP366P] priority rights and interests, these application or provisional application in each for all purposes pass through ginseng Examine and be incorporated by herein.In addition, U.S. Patent application No.13/893,242 require that on May 14th, 2012 is submitting, entitled " CROSS FLOW MANIFOLD FOR ELECTROPLATING APPARATUS " U.S. Provisional Application No.61/646,598 The rights and interests of the priority of [agency file number NOVLP367X1P], the provisional application is incorporated by herein for all purposes.

Technical field

Disclosed embodiment is related to for controlling electrolyte flow power (electrolyte in electroplating process Hydrodynamics method and apparatus).More specifically, methods and apparatus described herein is for by metal deposition to half It is particularly useful in conductor wafer substrates (substrate especially with multiple recess features).Exemplary technique and feature may include The small-sized dimpling feature (for example, copper, nickel, tin and tin alloy solder joint) and the silicon hole of copper of width with less than e.g., from about 50 μm (TSV) feature wears resist plating.

Background technology

Electrochemical deposition process is well established in modern integrated circuits manufacture.21 century in early days, from aluminum metal The transformation that line is connected to copper metal line connection has driven demand to increasingly finer electrodeposition technology and plating tool.It is many Tractability technique is gradually formed in response to the demand to the less and less current-carrying conductor in device metallization layer.These copper cash are pressed According to commonly referred to as " inlaying (damascene) " processing (pre-passivating metallization) method by plate metal to it is very thin, Formed in the groove and through hole of high-aspect-ratio.

Electrochemical deposition is ready for meeting to general popular referred to as wafer-class encapsulation (WLP) and silicon hole (TSV) electricity now The fine encapsulation of gas interconnection technique and the business demand of multichip interconnection technology.These technologies are proposed very to themselves Big challenge, this is partially due to generally larger characteristic size (compared to FEOL (FEOL) interconnection) and profundity are wide Than.

TSV, interconnection reallocation wiring or chip (are for example connected by chip according to the type of package feature and application To plate or chip bonding, such as flip-chip pillar), plating feature in the art be generally greater than about 2 microns and they Key dimension is typically about 5-100 microns (for example, copper post can be about 50 microns).With regard to structure (such as power supply on some pieces Bus) for, the feature to be plated can be more than 100 microns.The depth-to-width ratio of WLP features is typically about 1:1 (height than wide) or more It is low, but their scope may be up to about 2:1 or so, while TSV structure can have very high depth-to-width ratio (for example, about 20: Near 1).

A series of uniquenesses are occurred in that as the size of WLP structures is contracted to less than 50 μm (such as 20 μm) from 100-200 μm The problem of because in this size, the size of feature and typical mass transfer boundary layer thickness (occur convection pass to plane away from From) almost equivalent.For the former generation with larger feature, the convection pass of fluid and quality (mass) into feature is by flowing General infiltration of the field into the feature undertakes, but for less feature, stream whirlpool and the formation stagnated can suppress continuous Both the speed and uniformity of mass transfer in the feature of growth.Accordingly, it would be desirable to be created in less " dimpling " and TSV features strong The strong, new method of uniform mass transfer.

Not only characteristic size, and plating rate makes WLP and TSV applications be different from damascene applications.With regard to many WLP applications Speech, according to the metal (for example, solder of copper, nickel, gold, silver, etc.) of plating, on the one hand, between manufacture and the requirement of cost There is balance, on the other hand, need to have balance between technical difficulty (for example, similar in nude film and in spy in technology Levy the target of the productivity of capital stock of requirement in the change in pattern and chip of the adjoint chip in target).It is this flat for copper Weighing apparatus is generally issued in the speed of at least about 2 [mus (typically at least about 3-4 [mus or faster).With regard to tin and tin For alloy plating, the plating rate of greater than about 3 [mus (at least about 7 [mus for some applications) can quilt Need.For nickel and strike plating golden (such as low-concentration gold flash of light film layer), plating rate can be at about 0.1 to 1.5 micro- m/min Between clock.Under the of a relatively high plating rate state of these metals, metal ion in the electrolytic solution efficiently mass transfer to plating It is important to cover surface.

In some embodiments, plating must be carried out with crystalline substance over the entire surface of the wafer in the way of high uniformity (WIW uniformities) in piece, in all features of specific nude film and between all these features (WID uniformities), also have In independent characteristic, interior (WIF uniformities) reaches good plating uniformity in itself.The high plating rate of WLP and TSV applications is to electricity The uniformity of coating proposes challenge.For various WLP applications, plating is necessarily exhibited at most radially along wafer surface About 5% half way change (is referred to as WIW heterogeneities, in single spy at the multiple positions for crossing over wafer diameter in nude film Levy and measured in type).Similar same challenging requirement is different sizes (for example, diameter of feature) or different characteristic The various features of density (for example, island features in the middle of chip dies array or embedded feature) uniform deposition (thickness and Shape).This specification is commonly known as WID heterogeneities.WID heterogeneities as above-mentioned various features type part Change (for example,<5% half way) contrast the particular die position on chip in average characteristics height or given wafer die Other sizes at (for example, at middle radius, center or edge) place and measure.

Another challenging requirement is the general control of shape in feature.There is no appropriate flowing and mass transfer convection current control System, after the plating, line or post may be in two dimensions or three-dimensional with convex surface, plane or concave surface (for example, saddle or hemispherical) shape Formula, which exists, to be tilted and terminates, and generally with face profile, but not always face profile, is preferred planar profile.Meeting this While a little challenges, WLP applications must be competed with traditional, the potential relatively inexpensive serial routing operations that take and put.Further, Can relate to the various non-copper metals of plating for the WLP electrochemical depositions applied, such as solder as lead, tin, Xi-silver etc, with And other raised lower-lying metal (UBM) materials, such as the various alloys of nickel, cobalt, gold, palladium and these materials, some of them Including copper.The plating of Xi-silver near-eutectic alloy is that the lead-free solder of instead lead-tin eutectic solder carries out the alloy of plating One example of coating technology.

The content of the invention

Embodiments described herein is related to for plating metal to the method and apparatus on substrate.Generally, it is disclosed Technology is related to the use of the ion resistance element of improved trough of belt, the ion resistance element have be adapted to provide for through plate from Multiple holes of son migration and series of projections or step are to improve plating uniformity.In a side of these embodiments Face includes there is provided a kind of electroplanting device, the electroplanting device：(a) electroplating chamber, it is configured as containing electrolyte and anode, together When plate metal on substantially planar substrate；(b) substrate holder, it is configured to keep the essence in electroplating process Upper flat substrate make it that the plating clad can of the substrate is separated in electroplating process with the anode；(c) ion resistance element, its Including：(i) multiple passages, it extends through the ion resistance element and suitable for being provided in electroplating process through the ion The Ion transfer of resistance element；(ii) face of substrate is faced, it is parallel substantially with the plating clad can of the substrate and passes through Gap and the plating clad can of the substrate are separated；And (iii) multiple protruding portion, it is arranged on the ion resistance element On the face for facing substrate；(d) entrance in the gap, it is used to crossing current electrolyte introducing the gap；And (e) institute The outlet in gap is stated, it is used to receive the crossing current electrolyte flowed in the gap, wherein in electroplating process, the entrance The circumferential location relative close to orientation on the plating clad can of the substrate is arranged on outlet.

In some embodiments, being determined between the plating clad can and ion resistance element plane of the substrate, The gap between the face that substrate is faced described in the ion resistance element and the plating clad can of the substrate is less than About 15mm.In some cases, the gap between the plating clad can of the substrate and the maximum height of the protuberance can With between about 0.5-4mm.In some cases, the protuberance can have the height between about 2-10mm.In various realities Apply in mode, the protuberance is fifty-fifty orientated vertical substantially with the direction for the electrolyte that flows over.It is one or more or whole The protuberance can have at least about 3:1 length-width ratio.In various embodiments, the institute of the protuberance and the substrate It is substantially with extension to state plating clad can.

Many different protuberance shapes can be used.In some embodiments, at least two different shapes and/or chi Very little protuberance is present on the ion resistance element.One or more protuberances may include notch, in electroplating process, electricity Solve liquid flowable through the notch.The protuberance can be generally rectangular or triangle or cylinder or The combination of these shapes.The protuberance can also have a more complicated shape, and the protuberance of such as general rectangular is along described The top and bottom of protuberance have otch of different shapes.In some cases, the protuberance has triangular-shaped upper portion.One Individual example is the rectangular stub with triangular tip.Another example is with overall triangular shaped protuberance.

The protuberance can be from the resistive plate of ion of the trough of belt with normal angle or with non-normal angle (non-normal Angle) or with the combination at these angles upwardly extend.In other words, in some embodiments, the protuberance include with The face of orthogonal (normal) on ion resistance element flat surface.Alternately or in addition, the protuberance may include from ion The face of resistance element planar offset on-right angle angle.In some embodiments, the protuberance is by more than one part structure Into.For example, the protuberance may include the first protuberance part and the second protuberance part, wherein described first and second protrude The substantially similar direction skew of portion part from crossing current electrolyte is angle in opposite direction.

The ion resistance element can be configured to make electric field shape and control close to the substrate in electroplating process The feature of electrolyte stream.In various embodiments, manifold region under being set below the lower surface of the ion resistance element Domain, wherein the lower surface is back to the substrate holder.Central electrolyte liquor chamber and one or more feeding passages can be configured to by Electrolyte is sent to the entrance and to both lower manifold areas from the central electrolyte liquor chamber.By this way, it is electric Solution liquid can be directly transferred to the entrance and be flow over triggering above the ion resistance element of the trough of belt, and electrolyte can Be transmitted simultaneously the lower manifold areas, wherein electrolyte can by the passage in the ion resistance element of the trough of belt so as to Gap between the substrate and the ion resistance element of the trough of belt.Crossing current injection manifold can be fluidly connected to described Entrance.The crossing current injection manifold can be at least in part by the chamber limit in the ion resistance element.In some embodiment party In formula, the crossing current injection manifold is completely in the ion resistance element.

Stream confinement ring may be disposed on the peripheral part of the ion resistance element.The stream confinement ring can be helped again Guide the stream from the crossing current injection manifold so that it is flowed up in the side parallel with the surface of the substrate.The device It may also include the mechanism for rotating the substrate holder during plating.In some embodiments, the entrance is crossed over adjacent The arc between about 90-180 ° of the periphery of the plating clad can of the nearly substrate.The entrance may include multiple orientation not Same part.Multiple electrolyte feeding entrances can be configured to send electrolyte to the multiple orientation different inlet portion Point.In addition, one or more flow-control elements can be configured to independently control the multiple electrolyte to feed in electroplating process Multiple volume flow rates of electrolyte in entrance.In various embodiments, the entrance and exit may be adapted in electroplating process In the dynamic electrolyte of crossing current is produced in the gap shearing force is produced or maintained on the plating clad can of the substrate. In some embodiments, the protuberance is oriented in multiple parallel row.The row may include by non-projecting portion gap point Every two or more discontinuous protuberances, wherein on the direction of the dynamic electrolyte of crossing current, the non-protruding in adjacent column Portion gap is not lined up mutually substantially.

Disclosed embodiment another aspect there is provided a kind of electroplanting device, the electroplanting device includes：(a) it is electric Room is plated, it is configured as containing electrolyte and anode, while plating metal on substantially planar substrate；(b) substrate holder, It is configured to keep the substantially planar substrate so that the substrate plating clad can in electroplating process with the anode Separate；(c) ion resistance element, it includes：(i) multiple passages, it extends through the ion resistance element and suitable in electricity Ion transfer through the ion resistance element is provided during plating；(ii) face the face of substrate, its substantially with the lining The plating clad can at bottom is parallel and is separated by gap and the plating clad can of the substrate；And (iii) step, it is arranged on The described of the ion resistance element is faced on the face of substrate, wherein the step has height and diameter, wherein the step The diameter substantially with the plating clad can of the chip with extension, and the height of wherein described step and straight Footpath it is sufficiently small with allow electrolyte during plating below the substrate holder, flowed above the step and flow to it is described between In gap；(d) entrance in the gap, it is used to electrolyte introducing the gap；And the outlet in (e) described gap, it is used The electrolyte flowed in reception in the gap, wherein in electroplating process, the entrance and exit is suitable in electroplating process In in the gap produce crossing current electrolyte with the plating clad can of the substrate produce or maintain shearing force.

It is used at the another aspect of disclosed embodiment there is provided a kind of so that material is plated on into the half of normal diameter The resistive plate of ion of the trough of belt in electroplanting device on conductor chip, the resistive plate of ion of the trough of belt includes：With the semiconductor The plating clad can of chip is approximately with the plate of extension, wherein the plate has the thickness between about 2-25mm；Extend through described The through hole of at least about 1000 non-interconnected of the thickness of plate, wherein the through hole is suitable to provide in electroplating process through the plate Ion transfer；And it is arranged on the multiple protruding portion in the one side of the plate.

It is used in the another aspect of disclosed embodiment there is provided a kind of so that material is plated on into the half of normal diameter The resistive plate of ion of the trough of belt in electroplanting device on conductor chip, the resistive plate of ion of the trough of belt includes：With the semiconductor The plating clad can of chip is approximately with the plate of extension, wherein the plate has the thickness between about 2-25mm；Extend through the plate The through hole of at least about 1000 non-interconnected of thickness, wherein the through hole be suitable to provided in electroplating process through the plate from Son migration；And step, it is included in the bossing of the plate in the central area of the plate；The non-convex portion of the plate Point, it is arranged on the periphery of the plate.

Disclosed embodiment another aspect there is provided a kind of method for plated substrate, this method includes： (a) substantially planar substrate is received on substrate holder, wherein the plating clad can of the substrate is exposed, and wherein described lining Underframe is configured to keep the substrate so that the plating clad can of the substrate is separated in electroplating process with anode；(b) will The substrate soaks in the electrolytic solution, wherein between being formed between the plating clad can and ion resistance element plane of the substrate Gap, wherein the ion resistance element is at least about with extension, wherein the ion with the plating clad can of the substrate Resistance element is suitable to provide the Ion transfer through the ion resistance element in electroplating process, and wherein described ion resistance Property element include multiple protruding portion on the face for facing substrate of the ion resistance element, the protuberance and the substrate The plating clad can is substantially with extension；(c) with making electrolyte in the case of the substrate contact in the substrate holder Flow in the following manner, during (i) flows to the gap from side entrance, and flow out side outlet, and (ii) resistive from the ion The ion resistance element is flowed through below element, is flowed in the gap, and flows out the side outlet, wherein the entrance and going out Mouth is designed or is configured in electroplating process to produce crossing current electrolyte in the gap；(d) substrate holder is rotated；And (e) when making to flow described in electrolyte such as (c) by the plating clad can of electroplating material to the substrate.

In some embodiments, the institute measured between the plating clad can and ion resistance element plane of the substrate It is about 15mm or smaller to state gap.Gap between the plating clad can of the substrate and the highest face temperature of the protuberance can With between about 0.5-4mm.In some embodiments, the side entrance can be divided into two or more orientation differences and stream The part of body separation, and stream in the different part in orientation of electrolyte to the entrance can be independently controlled.In some situations Under, stream director element can be set in the gap.The stream director element can cause electrolyte with substantially linear stream Footpath flows to the side outlet from the side entrance.

Disclosed embodiment another aspect there is provided a kind of method for plated substrate, this method includes： (a) substantially planar substrate is received on substrate holder, wherein the plating clad can of the substrate is exposed, and wherein described lining Underframe is configured to keep the substrate so that the plating clad can of the substrate is separated in electroplating process with the anode； (b) by substrate leaching in the electrolytic solution, wherein the shape between the plating clad can and ion resistance element plane of the substrate Into gap, wherein the ion resistance element is at least about with extension, wherein described with the plating clad can of the substrate Ion resistance element is suitable to provide Ion transfer through the ion resistance element in electroplating process, and it is wherein described from Sub- resistance element includes step on the face for facing substrate of the ion resistance element, and the step is arranged on the ion resistance Surrounded in the middle section of property element and by the non-convex portion of the ion resistance element；(c) with the institute in the substrate holder Electrolyte is flowed in the following manner in the case of stating substrate contact, (i) flows through the step from side entrance, flow to the gap In, the step is again flowed through, and side outlet is flowed out, and (ii) flows through the ion resistance below the ion resistance element Property element, flows in the gap, flows through the step, and flows out the side outlet, wherein the entrance and exit is designed Or be configured in electroplating process in the gap produce transverse cross stream electrolyte；(d) substrate holder is rotated；And (e) exists By on the plating clad can of electroplating material to the substrate when making to flow described in electrolyte such as (c).

Specifically, some aspects of the invention can be described below:

1. a kind of electroplanting device, it includes

(a) electroplating chamber, it is configured as containing electrolyte and anode, while plating metal on substrate, the substrate is real It is flat in matter；

(b) substrate holder, its be configured to keep the substrate so that the substrate plating clad can in electroplating process with the sun Pole is separated；

(c) ion resistance element, it includes：

(i) multiple passages, it extends through the ion resistance element and suitable for being provided in electroplating process through the ion The Ion transfer of resistance element；

(ii) face of substrate is faced, its described plating clad can with the substrate is substantial parallel and passes through gap and the substrate The plating clad can is separated, the crossing current manifold that the gap is formed between the ion resistance element and the substrate；And

(iii) step, it is arranged on the described of the ion resistance element and faced on the face of substrate, wherein the step has height Degree and diameter, wherein the diameter of the step is substantially same extension with the plating clad can of the chip, and wherein The height and diameter of the step are sufficiently small to allow electrolyte during plating below the substrate holder, described Flow and flowed in the crossing current manifold above rank；

(d) entrance of the crossing current manifold, it is used to electrolyte introducing the crossing current manifold；And

(e) outlet of the crossing current manifold, it is used to receive the electrolyte flowed in the crossing current manifold,

Wherein in electroplating process, the entrance and exit is suitable to produce crossing current electrolyte in the crossing current manifold with described Shearing force is produced or maintained on the plating clad can of substrate.

2. the electroplanting device as described in clause 1, wherein the height of the step is between about 2-5mm.

3. the electroplanting device as described in clause 2, wherein the height of the crossing current manifold is between about 1-4mm.

4. the electroplanting device as described in clause 1, wherein the periphery of the step includes transitional region, described in the transitional region Step is rounded.

5. the electroplanting device as described in clause 4, wherein the transitional region has about 2-4mm width.

6. the electroplanting device as described in clause 1, wherein the step is described a diameter of between about 2-10mm, it is less than institute State the internal diameter of substrate holder.

7. the electroplanting device as described in clause 1, it further comprises the crossing current injection manifold areas for being fluidly connected to the entrance, Wherein during electroplating, the plating clad can of the substrate is reached after electrolyte leaves the crossing current injection manifold areas About the distance between 10-15mm is flowed before.

8. the electroplanting device as described in clause 1, wherein the crossing current manifold has about 15mm or smaller height.

9. the electroplanting device as described in clause 1, it further comprises being arranged on below the lower surface of the ion resistance element Lower manifold areas, wherein the lower surface is back to the substrate holder.

10. the electroplanting device as described in clause 1, it further comprises the crossing current injection manifold for being fluidly connected to the entrance, its Described in crossing current injection manifold at least in part by the chamber limit in the ion resistance element.

11. the electroplanting device as described in clause 1, it further comprises being arranged on the peripheral part of the ion resistance element Flow confinement ring.

12. a kind of ion of trough of belt with electroplanting device to be plated on material on the semiconductor wafer of normal diameter is resistive Plate, it includes：

Plating clad can with the semiconductor wafer is substantially with the plate of extension, wherein the plate has the thickness between about 2-25mm Degree；

The through hole of at least about 1000 non-interconnected of the thickness of the plate is extended through, wherein the through hole is suitable in electroplating process The middle Ion transfer provided through the plate；And

Step in the middle section of the plate, it includes the bossing of the plate；

The non-convex portion of the plate, it is arranged on the periphery of the plate.

13. the resistive plate of the ion of the trough of belt as described in clause 12, wherein the height of the step is between about 2-5mm.

14. the resistive plate of the ion of the trough of belt as described in clause 12, it further comprises the transition region of the periphery close to the step Domain, wherein the step is rounded on the width of the transitional region.

15. the resistive plate of the ion of the trough of belt as described in clause 14, wherein the width of the transitional region is between about 2-4mm.

16. a kind of method for plated substrate, it includes：

(a) substantially planar substrate is received on substrate holder, wherein the plating clad can of the substrate is exposed, and wherein institute State substrate holder and be configured to keep the substrate so that the plating clad can of the substrate is separated in electroplating process with anode；

(b) by substrate leaching in the electrolytic solution, wherein the shape between the plating clad can and ion resistance element of the substrate Into crossing current manifold,

At least substantially same extension of the plating clad can of wherein described ion resistance element and the substrate,

Wherein described ion resistance element is suitable to provide the Ion transfer through the ion resistance element in electroplating process, with And

Wherein described ion resistance element includes step on the face for facing substrate of the ion resistance element, and the step is set Put in the middle section of the ion resistance element and surrounded by the non-convex portion of the ion resistance element；

(c) with making electrolyte flow in the following manner in the case of the substrate contact in the substrate holder, (i) enters from side Mouthful the step is flowed through, flowed in the crossing current manifold, again flow through the step, and flow out side outlet, and (ii) is from institute State and the ion resistance element is flowed through below ion resistance element, flow in the crossing current manifold, flow through the step, and flow out The side outlet, wherein the side entrance and side outlet are designed or configured to produce in the crossing current manifold in electroplating process Raw crossing current electrolyte；

(d) substrate holder is rotated；And

(e) when making to flow described in electrolyte such as (c) by the plating clad can of electroplating material to the substrate.

17. the method as described in clause 16, wherein the step has the height between about 2-5mm, and wherein described horizontal stroke The height of manifold is flowed between about 1-4mm.

18. the method as described in clause 16, wherein the periphery of the step includes transitional region, in platform described in the transitional region Rank is rounded.

19. the method as described in clause 16, wherein electrolyte reach the substrate after the crossing current injection manifold is left The plating clad can before flow between about the distance between 10-15mm, wherein it is described crossing current injection manifold fluid be connected to institute State side entrance.

20. the method as described in clause 16, wherein providing dividing plate in the crossing current manifold, the dividing plate is configured as flowing Electrolyte be divided into adjacent flow in the crossing current manifold, the adjacent flow has substantially linear flow path.

These features and further feature are described below with reference to relevant drawings.

Brief description of the drawings

Figure 1A shows the ion of the trough of belt of the set with protuberance thereon according to some embodiments of the present invention Resistive plate isometric view.

Figure 1B shows that the substrate for electrochemical treatments semiconductor wafer keeps the perspective view with positioner.

Fig. 1 C show that it includes the cross-sectional view of a part for the substrate holding component of cone and cup.

Fig. 1 D show the simplification view available for the electroplating bath for implementing embodiments of the present invention.

Fig. 2 shows the electroplanting device being typically found in cathode chamber according to some embodiments disclosed by the invention Various parts exploded view.

Fig. 3 A show crossing current side entrance according to some embodiments of the present invention and the close-up illustration of surrounding hardware.

Fig. 3 B show the spy according to the crossing current outlet of various disclosed embodiments, CIRP manifold inlets and surrounding hardware Write view.

Fig. 4 shows the cross-sectional view of the various pieces of the electroplanting device shown in Fig. 3 A-B.

Fig. 5 shows the crossing current injection manifold and shower nozzle that are divided into 6 single sections according to some embodiments.

Fig. 6 show according to the CIRP of an embodiment of the invention and it is associated it is hardware, particularly focus on The top view of the entrance side of crossing current.

Fig. 7 show according to various disclosed embodiments show crossing current manifold entrance and exit both sides CIRP and The simplification top view of related hardware.

8A-B depicts the design of the crossing current inlet region according to some embodiments.

Fig. 9 shows the crossing current entrance area for describing some related geometries.

Figure 10 A show the crossing current entrance area for the resistive plate of ion for having used the trough of belt with step.

Figure 10 B show one embodiment of the resistive plate of the ion of the trough of belt with step.

Figure 11 shows the crossing current entrance area for the resistive plate of ion for having used the trough of belt with series of projections.

Figure 12 shows the close-up illustration of the resistive plate of the ion of the trough of belt with protuberance.

Figure 13 and 14 represents the different shapes and design of the protuberance according to some embodiments.

Figure 15 shows the protuberance with two different types of otch.

Figure 16 depicts the resistive plate of ion of the trough of belt of the protuberance with the type shown in Figure 15.

Figure 17 depicts the simplification of the resistive plate of ion of the trough of belt with the discontinuous protuberance separated in post by gap Top view.

Figure 18 shows the close-up cross-sectional view of the resistive plate of the ion of the trough of belt with protuberance.

Figure 19 shows the simplification top view of the embodiment of the resistive plate of the ion of trough of belt, and wherein protuberance is by multiple points Section is made.

Figure 20 gives experimental data, and it shows that the protuberance in the resistive plate of ion of trough of belt can be raised high by realizing The small change of thickness is spent to promote plating evenly.

Embodiment

In this application, term " semiconductor wafer ", " chip ", " substrate ", " wafer substrates " and " collection of part manufacture Into circuit " it is used interchangeably.It will be understood by those within the art that, term " integrated circuit of part manufacture " can To refer to the silicon wafer in any stage in many stages of manufacture integrated circuit thereon.The present invention is assumed in following detailed description Realized on chip.Under normal circumstances, semiconductor wafer a diameter of 200,300 or 450 millimeters.However, not office of the invention It is limited to this.Workpiece can be variously-shaped, size and material.In addition to semiconductor wafer, other workpiece using the present invention Including the various objects such as such as printed circuit board (PCB).

In the following description, many details are set forth providing to the thorough of the embodiment that is proposed Solution.Disclosed embodiment can these details it is part or all of on the premise of implement.In other examples In, known processing operation is not described in detail, to avoid unnecessarily obscuring disclosed embodiment.Although disclosed Embodiment will combine specific embodiment description, but it is to be understood that, this is not intended to limit disclosed implementation Mode.

In the following discussion, when the top and bottom feature (or the similar term, example that refer to disclosed embodiment Such as top and underlying features) or during element, be all based only on convenient at the top and bottom of term and use and only represent Ben Fa Bright reference or the single framework of realization.Other configurations be it is possible, for example top and bottom element relative to gravity be inverted and/ Or top and bottom part turns into left and right part or right and left part.This document describes arrived for electroplating one or more metals Apparatus and method on substrate.Generally describe the embodiment that the substrate is semiconductor wafer, but the present invention not by It is limited to this.

Disclosed embodiment include be configured as during electroplating control electrolyte flow mechanics device and comprising The method for controlling electrolyte flow mechanics, controls electrolyte flow mechanics to obtain highly consistent electricity by the apparatus and method Coating.In specific implementation, disclosed embodiment employ establishment percussion flow (conductance to workpiece surface or perpendicular to Workpiece surface) and shear flow (otherwise referred to as " flowing over " or the stream with the speed parallel to workpiece surface) combination method And device.

Disclosed embodiment use trough of belt the resistive plate of ion (CIRP), its provide chip plating clad can and Passage aisle (crossing current manifold) between CIRP top.The CIRP provides many functions, wherein having：1) gas current is allowed from logical The anode flow that is frequently located in below CIRP simultaneously flows to chip, and 2) allow fluid to flow upwardly through CIRP and be approximately towards wafer surface, With 3) limit and resist electrolyte stream away from and outflow crossing current manifold areas.It is by logical in CIRP in the stream of crossing current manifold areas The fluid of hole injection and the fluid composition from crossing current injection manifold (being usually located on CIRP and in the side of chip).

In embodiment disclosed in this invention, CIRP top surface is changed, thus improve on the face of chip and Maximum deposition rate and electroplating evenness in electroplating characteristic.The collection of step or protuberance can be taken in the modification of CIRP top surface The form of conjunction.Figure 1A provides the isometric view of the CIRP 150 of the set 151 with protuberance thereon.These CIRP modifications will It is discussed more fully below.

In some embodiments, for applying the mechanism of crossing current with for example in the trough of belt in crossing current manifold Appropriate stream on the periphery of ion resistance element or close to the periphery of the ion resistance element of the trough of belt is guided and distribution dress The entrance put.The surface guiding crossing current catholyte towards substrate of ion resistance element of the entrance along trough of belt.It is described Entrance is that azimuth is asymmetric, partly follows the periphery of the ion resistance element of trough of belt.The entrance can include one Or multiple gaps or chamber, for example it is radially positioned in the annular for being referred to as crossing current injection manifold on the outside of the ion resistance element of trough of belt Chamber.The other elements cooperated with crossing current injection manifold can be optionally provided.These elements can include crossing current injection flow point Cloth shower nozzle, crossing current limitation ring and fair water fin, will be further illustrated with reference to accompanying drawing to it below.

In some embodiments, the device is configured as the side for making electrolysis liquid energy plate clad can along direction or perpendicular to substrate To flowing, to produce the mean flow of at least about 3 cels from the hole discharge of the ion resistance element of trough of belt in electroplating process Fast (for example, at least about 5 cels or at least about 10 cels).In some embodiments, described device is configured as： Produce across the central point of the plating clad can of substrate about 3 cels or more it is big (for example, about 5 cels or it is bigger, about 10 lis Meter per second or bigger, about 15 cels are bigger, or about 20 cels or bigger) average transverse electrolyte flow rate condition Lower operation.In the electroplating bath using about 20 liters/min of total electrolyte flow rate and the substrate of about 12 inch diameters, these flow rates (that is, discharge ion resistance element hole flow rate and through substrate plating clad can flow rate) be appropriate in some embodiments 's.Embodiments of the present invention can be implemented using various substrate dimensions.In some cases, substrate have about 200 millimeters, about 300 millimeters or about 450 millimeters of diameter.In addition, embodiments of the present invention can be implemented under various total flow rates.At certain In a little implementations, total electrolyte flow rate is between about 1-60 liters/min, between about 6-60 liters/min, in about 5-25 Between liter/min or between about 15-25 liters/min.The flow rate realized in electroplating process can be by some hardware constraints, such as The size and capacity of used pump is limited.It will be appreciated by those skilled in the art that disclosed in ought being implemented with larger pump During technical scheme, the flow rate cited in the present invention may be higher.

In some embodiments, the electroplanting device includes anode chamber and the cathode chamber of separation, wherein in two chambers There are different electrolyte components, electrolyte circulation loop and/or hydrodynamics in each.Chamber can be suppressed using ion permeable membrane The direct convection pass (flow motion of material) of one or more parts between room, and keep between the chambers desired Separation.The film can stop some kinds of transport of substantial amounts of electrolyte stream and exclusion such as organic additive etc, simultaneously Selectively allow such as only cation (cation-exchange membrane) or the only transport of the ion of anion (anion-exchange membrane) etc. As specific embodiment in some embodiments, the film includes the E.I.Du Pont Company from Wilmington, DE The cation-exchange membrane NAFION of (DuPont of Wilmington, Delaware)^TMOr related ion selectivity polymer. In other cases, the film does not include ion exchange material, but includes micro- porous material.Generally, electricity in the cathodic compartment Solution liquid is referred to as " catholyte ", and electrolyte in the anode compartment is referred to as " anolyte ".Under normal circumstances, it is positive Pole electrolyte and catholyte have different components, and anolyte contains little or no electroplating additive (for example, promoting Enter agent, inhibitor and/or leveling agent), and catholyte contains this additive of big concentration.The concentration of metal ion and acid Also it is usually different between the two chambers.The example of the electroplanting device of anode chamber containing separation was submitted on November 3rd, 2000 The United States Patent (USP) that United States Patent (USP) No.6527920 [agency file number NOVLP007], August in 2002 are submitted on the 27th United States Patent (USP) No.8262871 [the generations that No.6821407 [agency file number NOVLP048] and on December 17th, 2009 submit Reason mechanism file number NOVLP308] in be described, each of which is incorporated herein by reference.

In some embodiments, film need not include ion exchange material.In certain embodiments, the film is by such as Micro- porous material of polyether sulfone etc is made, polyether sulfone by Massachusetts Wilmington (Wilmington, Massachusetts Koch Membrane productions).Such film is most apparent from suitable for inert anode application, such as Xi-silver plating and gold plating, but such film can be used for soluble anode application, and such as nickel is plated.

In some embodiments, and as elsewhere herein is described more fully with, catholyte can flow through electricity One in two main thoroughfares in coating bath.In first passage, catholyte is admitted to below CIRP and usual (but not necessarily) it is located at the manifold areas above groove film and/or film framework retainer, hereinafter referred to as " CIRP manifold areas ".Negative electrode Electrolyte is upward through in CIRP various holes from CIRP manifold areas, into CIRP, reaches the gap of substrate (commonly known as Crossing current region or crossing current manifold areas), flowed along the direction towards wafer surface.In the feeding passage of the second crossing current electrolyte In, catholyte feeds from the side of crossing current injection manifold areas and enters crossing current injection manifold areas.The catholyte Liquid flows into CIRP from the injection manifold that flows over, and reaches the gap (that is, flow over manifold) of substrate, its edge is roughly parallel to substrate herein The direction on surface is flowed on the surface of substrate.

Although some aspects described here can be used in various types of electroplanting devices, for simple and clear See, most of embodiments will be related in wafer face " fountain " electroplating device directed downwardly.In such a device, workpiece to be plated ( It is usually semiconductor wafer in embodiment provided by the present invention) typically have generally horizontal direction (in some cases, right In a part for electroplating process or in whole electroplating process, the horizontal direction can change some angles relative to high tone Degree), it is possible to it is energized to rotate in electroplating process, produces substantially vertical upward electrolyte convection model.From chip The percussion flow material at center to edge and the chip of rotation are in intrinsic higher angle speed of its edge relative to its center The integration of degree produces radially enlarged tangential (parallel wafers) flow velocity.The example of the member of groove/device of fountain plating class It is the Inc.of San Jose by Novellus Systems, what CA. was produced and can obtained from it Electroplating System.In addition, the United States Patent (USP) that fountain electroplating system was submitted for 10 in such as 2001 on Augusts United States Patent (USP) No.8308931 [the generations that No.6800187 [agency file number NOVLP020] and on November 7th, 2008 submit Reason mechanism file number NOVLP299] in be described, be fully incorporated the present invention by quoting.

Substrate to be electroplated is typically flat or substantially flat.As used herein, with ditch, through hole, light It is considered as substantially flat to cause the substrate of the features such as Resist patterns.Although not necessarily always thus, but generally these are special Property is on a microscopic scale.In many embodiments, one or more of substrate surface part can be shielded in order to avoid sudden and violent It is exposed to electrolyte.

Figure 1 below B description provides common unrestricted background to help to understand apparatus and method as described herein. Figure 1B provides the wafer holder for electrochemical treatments semiconductor wafer and the perspective view of positioner 100.Device 100 includes Chip meshing part (is sometimes referred to herein as " clam shell " part).Actual clam shell includes cup 102 and cone 103, and it makes Obtain pressure energy to be applied between chip and seal, so as to ensure chip in cup.

Cup 102 is supported by pillar 104, and pillar 104 is connected to top board 105.This concentrates the component (102- of component 101 105) driven via axle 106 by motor 107.Motor 107 is connected to mounting bracket 109.Axle 106 passes on moment of torsion to chip (not shown) is rotated with allowing it during electroplating.Cylinder (not shown) in axle 106 also provide cup and cone 103 it Between vertical force to produce the sealing between the chip in cup and containment member (lippacking).For the mesh of discussion , including part 102-109 component is collectively referred to as wafer rack 111.It is noted, however, that the concept of " wafer rack " usually extends to nibble The various combinations of synthetic piece and the part for allowing movement thereof and positioning and sub-portfolio.

Tilt component includes the first plate 115, and the first plate 115 is slidably connected to the second plate 117, and tilt component is connected To mounting bracket 109.Driving cylinder 113 is connected respectively to plate 115 and plate 117 in pivoting point 119 and 121.Therefore, driving cylinder 113 There is provided power is used to make sliding panel 115 (and therefore wafer rack 111) pass through plate 117.The end of wafer rack 111 (i.e. mounting bracket 109) End is moved along the curved path (not shown) for being limited to the contact area between plate 115 and 117, and therefore, wafer rack 111 it is near (i.e. cup and cone assembly) is held to be tilted on effective pivot.This allows chip angularly to enter electroplating bath.

Whole device 100 is via another actuator is by lifting vertically upward or vertical falls with by the near of wafer rack 111 End immersion coating solution (not shown).Therefore, double component detent mechanisms are provided along hanging down perpendicular to the track of electrolyte for chip Straight motion and the banking motion for allowing the skew (parallel to electrolyte surface) from horizontal direction (angled chip submerges ability). The locomitivity of device 100 and associated hardware submit the US patents 6 announced with April 22 in 2003 on May 31st, 2001, 551,487 [attorney docket NOVLP022] have more detailed description, and entire contents are incorporated herein by reference herein.

Note, device 100 is generally used together with the special electrolytic cell with electroplating chamber, the electroplating chamber accommodates anode (for example, copper anode or nonmetallic inert anode) and electrolyte.Electroplating bath, which may also comprise pipeline or conduit coupling, to be used to circulate Electrolyte is by electrolytic cell-and for workpiece to be plated.It can also include film or be designed in anode chamber and cathode chamber Keep the separator of different electrolyte chemicals.Anolyte is shifted to catholyte or main plating bath by physical means The device of (such as the direct pumping including valve, or overflow launder) can also be optionally provided.

Following description is there is provided the cup of clam shell and the more details of cone assembly.The part 101 of Fig. 1 C components 100, It includes the cone 103 and cup 102 with cross-sectional form.Note, the accompanying drawing is not the true description of cup and cone assembly, But stylized description for discussion purposes.Cup 102 is supported via pillar 104 by top board 105, pillar 104 via Screw 108 is connected.In general, cup 102 provides the support for shelving chip 145.It includes opening, by the opening from electricity The electrolyte of coating bath can contact chip.Note, chip 145 has front 142, plating occurs in front 142.Chip 145 Periphery is shelved on cup 102.Cone 103 is downwardly against the dorsal part of chip to keep it in electroplating process in position.

Load wafer is wanted to enter 101, cone 103 describes position from it and lifted by main shaft 106, until cone 103 is touched Top board 105.From this position, gap is produced between cup and cone, chip 145 may be inserted into the gap, and therefore fill It is loaded into cup.As depicted, then cone 103 is lowered to engage against the chip of the periphery of cup 102, and with synthesis group Electric contact (not shown in fig. 1 c) along chip outer periphery exceed lippacking 143.In the resistive plate of the ion of trough of belt (CIRP) using in step or the embodiment of a series of protuberance on, chip can be inserted differently, to avoid chip or crystalline substance Horse is contacted with CIRP.In this case, wafer rack initially can angularly insert chip with the surface relative to electrolyte. Then, the rotatable chip of wafer rack causes it in horizontal level.When afer rotates, it can continue to travel down to electrolyte In, as long as CIRP is interference-free.The decline of chip insertion can include inserting chip vertically downward.When chip is in its level During direction (that is, after chip is not tilted), this vertical downward movement can be completed.

Axle 106 transmits the vertical force for causing the engaged wafer 145 of cone 103 and the moment of torsion two for rotary components 101 Person.These conveying capacities are as shown in the arrow in Fig. 1 C.Note, wafer electroplating is generally rotated ((such as at Fig. 1 C top in chip Dotted line shown in) when occur.

Cup 102 has compressible lippacking 143, when 103 engaged wafer 145 of cone, lippacking 143 Form Fluid Sealing.Vertical force compresses lippacking 143 from cone and chip, to form Fluid Sealing.Lip packing Part prevents the back (may introduce polluter herein, such as copper or tin ion are directly entered silicon) of electrolyte contacts chip 145 And prevent to contact the sensitive compressible members of device 101.Seal also may be present between the interface of cup and chip, it is close that it forms fluid The seal of envelope is further to protect the back (not shown) of chip 145.

Cone 103 also includes seal 149.As illustrated, seal 149 is at the edge 103 and the upper zone of cup of cone It is located at the adjacent edges when domain is engaged.This also protects the back of chip 145 from that may enter any of clam shell above cup Electrolyte.Seal 149 can be fixed to cone or cup, and can be single seal or multipart seal.

When electroplating beginning, cone 103 is lifted in the top of cup 102 and chip 145 is introduced into component 102.Work as chip When being introduced cup 102-be generally gently shelved on lippacking 143 by mechanical arm-its front 142.In plating Period, component 101 rotates, so as to help to realize uniform plating.In subsequent accompanying drawing, group is depicted in the more simple form Part 101 and on for controlled during plating chip plate surface 142 on electrolyte fluid dynamic part.

Fig. 1 D depict the viewgraph of cross-section for electroplating electroplanting device 725 of the metal to chip, and the chip passes through crystalline substance Horse 101 is clamped, positions and rotated.Device 725 includes coating bath 155, and coating bath 155 is the two-chamber groove with anode chamber, anode chamber With such as copper anode 160 and anolyte.Anode chamber and cathode chamber are separated, for example, supported by supporting member 735 Cationic membrane 740 separates.As described herein, plating appts 725 include CIRP 410.Current divider 325 at CIRP 410 top, and And help as described herein produces lateral shear stream.Catholyte introduces cathode chamber (top of film 740) via flow port 710. As described herein, catholyte is from flow port 710, by CIRP410, and produces the plating clad can that impact flows to chip 145.Remove The flow port 710 of catholyte, other flow port 710a also guides to its outlet catholyte in remote location Space/outlet of current divider 325.In this example, flowing ports 710a outlet is formed as flowing the passage of forming board 410. Functional result is that catholyte stream is introduced directly into the electroplating region formed between CIRP 410 and chip plating clad can 145 Domain, to improve the horizontal stream for crossing wafer surface, so that crossing the flow vector standardization of chip 145 (and stream plate 410).

Substantial amounts of accompanying drawing is provided to further illustrate and explain embodiments disclosed herein.Accompanying drawing includes, except other Outside item, the structural detail associated with electroplanting device disclosed in this invention and each accompanying drawing of flow path.These elements Some title/reference numerals are given, it is as one man used in Fig. 2 to 19 description.Fig. 2 is introduced in some embodiments The some elements introduced, it include wafer rack 254, crossing current confinement ring 210, crossing current ring pad 238, with the shower nozzle 242 that flows over Resistive (CIRP) plate 206 of ion of trough of belt and the film framework 274 with fluid regulation rod 274.In fig. 2, carried with exploded view Demonstrate how these parts are combined together for these elements.

In most cases, embodiment below assumes that the electroplanting device includes single anode chamber.Described Feature is comprised in cathode chamber.On Fig. 3 A, Fig. 3 B and Fig. 4, include film framework 274 and film in the lower surface of cathode chamber 202 (be very thin because of it, the film is practically without showing in figure, but its position 202 is shown located on film frame 274 Lower surface on), film 202 its anode chamber and cathode chamber are separated.The configuration of any amount of possible anode and anode chamber is all It can use.

Many emphasis in the following description are the catholytes in control crossing current manifold or manifold areas 226.This is horizontal Stream manifold areas 226 can also be referred to as gap or CIRP to wafer gap 226.Catholyte passes through following two independent Entrance enters crossing current manifold 226：(1) passage in the resistive plate 206 of ion of trough of belt and (2) crossing current startup structure 250.Arrive The surface for being directly toward workpiece via the passage in CIRP 206 up to the catholyte of crossing current manifold 226 is guided, and is typically Guided along substantially perpendicular directions.The small of surface that the passage of this conveying catholyte can form impact workpiece is penetrated Stream, the plate 206 that the workpiece is commonly angled relative to tape channel slowly rotates (for example, between about 1 between 30rmp).On the contrary, reaching horizontal The surface that catholyte in stream manifold 226 is arranged essentially parallel to workpiece via crossing current startup structure 250 is oriented to.

In just as discussed above, in electroplating process, the resistive plate 206 of ion of trough of belt (is also sometimes referred to as trough of belt Ion resistance element, CIRP, virtual (virtual) anode of high resistance, or HRVA) be positioned at the working electrode (chip or Substrate) between relative electrode (anode), to show big localization ion system electricity close to wafer interface Resistance (and thus control electric field and mould electrical field shape), and control the flow behavior of electrolyte.Each accompanying drawing herein is shown Relative position of the resistive plate 206 of ion relative to the other structures feature of disclosed device of trough of belt.Such ion is resistive The U.S. Patent number 8,308,931 [attorney docket NOVLP299] that one example of element 206 was submitted on November 7th, 2008 Be described, before it by quote be integrally incorporated it is described herein.The resistive plate of ion of trough of belt described in it is adapted to Improve wafer surface, such as those containing relatively low electrical conductivity or those contain plating on very thin resistive inculating crystal layer radially Uniformity.In many embodiments, the resistive plate of the ion of trough of belt is suitable to the platform for including as described above and being described further below Rank or a series of protuberance.

" film framework " 274 (anode film framework is sometimes referred to as in alternative document) uses in some embodiments Structural detail, to support the film 202 for separating cathode chamber and anode chamber.It can be disclosed herein some with being relevant to Other features in embodiment.Especially, embodiment referring to the drawings, it can be used for including flow channel 258 and 262 Catholyte is transported in CIRP manifolds 208 or crossing current manifold 226.In addition, film framework 274 can be defeated including being configured as The catholyte of crossing current is sent to the shower plate 242 for the manifold 226 that flows over.Film framework 274 can also contain groove weir wall 282, and it is used In it is determined that and regulation electrolyte topmost level.Each accompanying drawing herein is associated with disclosed lateral flow device other Film framework 274 is depicted in the context of architectural feature.

Film framework 274 is the rigid structure members for clamping film 202, its be generally responsible for by anode chamber and cathode chamber every The amberplex opened.As explained above, anode chamber can accommodate the electrolyte of the first component, and cathode chamber accommodates the second component Electrolyte.Film framework 274 can also include multiple fluid regulation bars 270 (sometimes referred to as traffic constraints element), and it can be by For helping the ion resistance element 206 for controlling fluid to be transported to trough of belt.Film framework 274 limit cathode chamber bottom part and The superiors part of anode chamber.Described part is all located at the workpiece side of electrochemical plating cell in anode chamber and anode chamber's film 202 tops.They may be regarded as a part for cathode chamber.It is to be understood, however, that crossing current injection device is some Embodiment do not use the anode chamber of separation, and therefore film framework 274 is not required.

Being usually located between the workpiece and the film framework 274 is the resistive plate 206 of ion of trough of belt and the ring that flows over Pad 238 and chip crossing current limitation ring 210, the resistive plate 206 of each of which ion that can be fixed to trough of belt.More specifically, Crossing current ring pad 238 can be positioned directly on CIRP 206 top, and chip crossing current limitation ring 210 can be positioned in horizontal stroke The top surface of the top of ring pad 238 and the resistive plate 206 of ion fixed to trough of belt is flowed, pad 238 is effectively clipped.Herein Each accompanying drawing shows the crossing current confinement ring 210 arranged relative to the resistive plate 206 of ion of trough of belt.In addition, CIRP206 may include The step or a series of protuberance being described further below.

As shown in Fig. 2 the most upper related architectural feature of the present invention is workpiece or wafer rack.In certain embodiments, The work rest can be cup 254, and it is generally used in cone and cup clamshell type design, is such as presented as from bright nurse (Lam) what research company obtained is above-mentionedPlating tool.For example, Fig. 2, Fig. 8 A and Fig. 8 B show cup 254 relative to The relative positioning of other elements of described device.

Fig. 3 A show crossing current entrance side (the cross flow according to the electroplanting device of embodiment disclosed herein Inlet side) closely sectional view.Fig. 3 B shown and gone out according to the crossing current of the electroplanting device of embodiment disclosed herein The closely sectional view of mouth side (cross flow outlet side).Fig. 4 show according to herein some of embodiment, Show the sectional view of the electroplanting device of entrance side and outlet side.In electroplating process, catholyte is filled and occupied Region between the top of film 202 on film framework 274 and film framed weir wall (weir wall) 282.The catholyte Three sub-regions can be subdivided into：1) it is located at what is separated below CIRP206 with (design for employing anode chamber's anode film) (part is also sometimes referred to as lower manifold in the resistive plate manifold region 208 of ion of the trough of belt of the top of cationic membrane 202 of anode chamber Region), 2) crossing current manifold areas 226 between chip and CIRP206 upper surface, and 3) renovating/outside of cup 254 And (it is sometimes film frame in the upper groove region of the inner side of groove weir wall (cell weir wall) 282 or " electrolyte holding area " The entity part (physical part) of frame 274).When do not immerse the chip and renovate/cup 254 is in lower position When, the second area and the 3rd region are combined into single region.

Fig. 3 B show the sectional view of the single ingate of connection CIRP manifolds 208 and passage 262.Dotted line represents fluid stream Path.

Catholyte can be transferred to electroplating bath at central cathode electrolyte entrance manifold (not shown), negative electrode electricity Solution liquid can be located at the bottom of the groove and be fed by single pipeline.From here, the catholyte may be logically divided into two it is different Flow path or stream.One stream (such as 6 in 12 inlet ports) makes catholyte flow into CIRP manifolds by passage 262 Region 208.After the catholyte is transferred to CIRP manifolds 208, the catholyte passes through the microchannel in CIRP Flow upwardly into crossing current manifold 226.Another stream (for example, other 6 inlet ports) makes catholyte flow into crossing current injection manifold, From here, (in certain embodiments, the quantity of the dispensing orifice can by the dispensing orifice 246 of the shower nozzle 242 that flows over for the electrolyte flow More than 100).After the crossing current showerhead hole 246 is left, the flow direction of the catholyte is changed into from (a) perpendicular to chip (b) parallel to chip.The flow direction changes to be occurred when the stream impacts the surface of the crossing current limitation entrance cavity 250 of ring 210, and the stream To limiting for the surface that the crossing current limitation entrance cavity 250 of ring 210 is impacted by the stream.Finally, when entering crossing current manifold region 226, This two strands of catholyte stream (initially the bottom of the groove in central cathode electrolyte entrance manifold is separation) is aggregated in one Rise.

In the embodiment shown in Fig. 3 A, 3B and 4, a part of catholyte into cathode chamber is provided directly to The resistive plate manifold 208 of ion of trough of belt, and a part is provided directly to crossing current injection manifold 222.It is transferred to trough of belt At least a portion (often but being not always) of the catholyte of the resistive plate manifold 208 of ion passes through multiple micro- in plate 206 Passage simultaneously reaches crossing current manifold 226.Enter the negative electrode electricity of crossing current manifold 226 by the passage in the resistive plate 206 of the ion of trough of belt Solving liquid, (in certain embodiments, the passage is made with certain angle, therefore it along the spout being substantially vertically oriented Be not the surface for being exactly perpendicularly to chip, for example, the spout can reach about 45 relative to the angle of the normal of wafer surface Degree) enter the crossing current manifold.The part catholyte into crossing current injection manifold 222 is delivered directly to the manifold that flows over 226, herein, the part catholyte is entered with the crossing current of the horizontal orientation below chip.Removing the manifold 226 that flows over Way in, (in certain embodiments, the catholyte of the crossing current by flowing over injection manifold 222 and crossing current shower plate 242 The crossing current shower plate includes about 139 a diameter of about 0.048 inch of dispensing orifices 246), then limit ring 210 by flowing over The effect of entrance cavity 250/geometry mechanism changes into the stream parallel to wafer surface from stream vertically upward.

The absolute angle of crossing current and spout need not be entirely horizontal or be entirely vertical or mutual be directed Into exactly 90 degree.But, generally speaking, the crossing current of the catholyte in crossing current manifold 226 is generally along workpiece surface Direction, the direction of the catholyte jet flow of the upper surface of the resistive plate 206 of ion from micro-strip groove generally upward/perpendicular to The surface of workpiece.Crossing current and impingement flow help lend some impetus to electroplating effect evenly in the mixing of wafer surface.Implement some In example, the catholyte for hindering crossing current dynamic using protuberance, make it that it changes direction on the direction towards wafer surface.

As described above, the catholyte into cathode chamber is divided into the resistive plate manifold 208 of ion of (i) from trough of belt and flowed By the passage in CIRP206, subsequently into crossing current manifold 226 catholyte and (ii) pass through the hole 246 in shower nozzle 242 Flow into crossing current injection manifold 222, the catholyte subsequently into crossing current manifold 226.It is direct from crossing current injection manifold areas 222 The stream of entrance can enter via crossing current limitation ring entrance (sometimes referred to as flow over side entrance 250), and can be from the side of groove Scattered parallel to chip.By contrast, the fluid jet for manifold areas 226 of flowing over is entered from crystalline substance via CIRP206 microchannel Piece and crossing current 226 lower section enter, and the injection fluid crossing current manifold 226 in be diverted and (redirect) with parallel to Chip simultaneously exports 234 (also sometimes referred to as crossing current is exported or exported) flowings towards crossing current limitation ring.

In a particular embodiment, with six be used for directly transmission catholyte to flow over inject manifold 222 ( Herein, catholyte be then transmitted to crossing current manifold 226) independent feeding passage 258.In order to influence in crossing current manifold Crossing current in 226, these passages 258 with azimuthal mode heterogeneous stretch into (exit into) crossing current manifold 226.Tool Body, these passages enter the crossing current in the particular side or orientation angular zone (azimuthal region) of crossing current manifold 226 Manifold 226.

In the embodiment shown in Fig. 3 A, manifold 222 is injected for directly transmitting catholyte to crossing current Fluid path 258 before crossing current injection manifold 222 is reached through four independent elements：(1) in the anode locular wall of groove In designated lane, the designated lane of (2) in film framework 274, the designated lane of (3) in the resistive plate 206 of ion of trough of belt (these designated lanes transmit catholyte to the 1-D microchannels of crossing current manifold 226 not from CIRP manifolds 208 with being used for Together), and last (4) fluid path in chip flows over limitation ring 210.When these elements are differently configured, the moon Pole electrolyte may not necessarily flow through each in these independent elements.

As described above, the part for passing through film framework 274 and feeding crossing current injection manifold 222 of flow path is referred to as Crossing current feeding passage 258 in film framework.Similarly, the flow path through film framework 274 and feed CIRP manifolds Part is referred to as the crossing current feeding passage 262 for feeding the resistive plate manifold 208 of ion of trough of belt, or CIRP manifolds feeding passage 262.That is, term " crossing current feeding passage " includes the catholyte feeding passage 258 of feeding crossing current injection manifold 222 Passage 262 is fed with the catholyte of feeding CIRP manifolds 208.One between these streams 258 and 262 is distinguished above Through description：Chip is initially directed towards through the direction of CIRP206 stream, then due to the presence of chip and in crossing current manifold In crossing current and change over parallel with chip, and exported from crossing current injection manifold 222 and by the limitation ring entrance 250 that flows over Crossing current part be arranged essentially parallel to chip in crossing current manifold and start.It is not intended to limited to any model or theory, punching Hit the combination with concurrent flow and mixing is believed to essentially contribute to improve oozing of being flowed in recessed/Embedded feature (flow penetration) is spent thoroughly, so as to improve the transmission of quality.The a series of protuberance included on CIRP surfaces can Further improve this mixing.By uniform stream field and rotating chip in space for the creativity below chip, each feature, Each tube core presents almost identical stream mode (flow pattern) in the rotation and electroplating process.

When feeding passage 258 through the crossing current in plate 206, the flow path for transmitting the dynamic catholyte of crossing current Started with vertically upward direction.Then, the flow path enter formed trough of belt the resistive plate 206 of ion it is internal Crossing current injection manifold 222.Crossing current injection manifold 222 is azimuthal chamber, and the chamber can be in plate 206, will can flow Body is from multiple independent (for example, each in 6 independent crossing current feeding passages) distribution of feeding passage 258 to crossing current Multiple flow point distribution 246 of shower plate 242 dig out passage (dug out channel).The crossing current injects manifold 222 along band The periphery of the resistive plate 206 of ion of groove or oblique profile (angular section) positioning of fringe region.For example, see Fig. 3 A and Fig. 4-6.Accompanying drawing 3A and Fig. 4 have been introduced above.Fig. 5 shows the shower plate 242 positioned at the top of crossing current injection manifold 222.Fig. 6 In the case of other elements with electroplanting device, the shower plate 242 of the top of crossing current injection manifold 222 is similarly illustrated.

In some embodiments, as shown in Figure 5 and Figure 6, crossing current injection manifold 222 is in the perimeter region across the plate C-shaped configuration is formed in about 90 ° -180 ° of angle.In some embodiments, the angular range of crossing current injection manifold 222 is About 120 ° -170 °, in more specifically embodiment, the angle is about about 140 ° -150 °.In these or other embodiment In, the angular range of crossing current injection manifold 222 is at least about 90 °.In many embodiments, the shower nozzle 242 is about crossed over The identical angular range of manifold 222 is injected with the crossing current.In addition, (in many situations, it includes one to whole entrance structure 250 Individual or multiple crossing current injection manifolds 222, shower plate 242, showerhead hole 246 and the opening in crossing current limitation ring 210) it may span across this A little identical angular ranges.

In some embodiments, ion resistive plate 206 (channeled of the crossing current in injection manifold 222 in trough of belt Ionically resistive plate) the interior chamber for forming continuous fluid connection.In this case, manifold is injected to crossing current All crossing currents feeding passage 258 of feed is discharged into the crossing current continuously connected an injection air pressure in manifold chamber.In other embodiment In, to be divided into two or more angles different and complete or partial for crossing current injection manifold 222 and/or crossing current shower nozzle 242 The section of separation, as shown in Figure 5 (it shows the section of 6 separation).In some embodiments, the number of the section angularly separated Measure between about 1-12, or between about 4-6.In an embodiment, the different section fluid of each angle connects It is connected to the crossing current feeding passage 258 for the separation being arranged in the resistive plate 206 of the ion of trough of belt.Thus, for example, injecting discrimination in crossing current There may be the subregion of the different separation of 6 angles in pipe 222, each sub-regions feed passage 258 by the crossing current of separation Feeding.In certain embodiments, each different subregion of crossing current injection manifold 222 has identical volume and/or phase Same angular region.

In several cases, catholyte is discharged and by angularly dividing with multiple from crossing current injection manifold 222 From catholyte export (hole) 246 crossing current shower plate 242.See, for example, Fig. 2,3A and 6 (the moon not shown in all figures Pole electrolyte outlet/hole 246).In certain embodiments, for example as shown in Figure 6, crossing current shower plate 242 is integrated into trough of belt The resistive plate 206 of ion in.In certain embodiments, the shower plate 242 is consolidated by glue, by bolt or other manner The top of the crossing current injection manifold 222 of the fixed resistive plate 206 of ion to trough of belt.In certain embodiments, the top of crossing current shower nozzle 242 The plane or top table of the resistive plate 206 of ion (not including any step or protuberance on the CIRP 206) of surface and trough of belt Face is highly identical, or the slightly above resistive plate 206 of ion of the trough of belt is not (including any step on the CIRP206 or prominent Go out portion) plane or top surface.Thus, flowing through the catholyte of crossing current injection manifold 222 can start to flow through institute vertically upward Showerhead hole 246 is stated, the lower section of crossing current confinement ring 210 is then flowed transversely across and flows into crossing current manifold 226, so that catholyte edge The direction entrance crossing current manifold 226 for being arranged essentially parallel to wafer surface.In other embodiments, can be directed to shower nozzle 242 makes The catholyte discharged from showerhead hole 246 is obtained to flow up in the side parallel to chip.

In an embodiment, crossing current shower nozzle 242 has about 140 catholyte angularly separated outlets Hole 246.In general, any number of hole that uniform cross flow is rationally set up in crossing current manifold 226 can be used.In some implementations In mode, there are about 50-300 such catholyte outlet openings 246 in crossing current shower nozzle 242.In some embodiments, It there are about 100-200 such holes.In some embodiments, about 120-160 such holes be there are.Generally, respectively The size of individual outlet or hole 246 can be about 0.020-0.10 inches in diametrically, be about 0.03-0.06 English more particularly It is very little.

In some embodiments, equiangularly mode (passes through consolidating between the groove center and two adjacent holes Determine the spacing between each hole 246 of angle-determining) along the whole angular range of crossing current shower nozzle 242, this some holes 246 is set.Other In embodiment, in non-angularly mode along the angular range distribution hole 246.However, in some embodiments, it is described Non- equal angular pore size distribution is that linear (" x-axis direction ") is uniformly distributed.In other words, in the latter case, the pore size distribution It is such situation：If the hole is projected to the axle (axle is in the " x " direction) perpendicular to cross-wind direction, the hole with Equal larger distance is spaced apart.Each hole 246 is arranged on away from the same radial of room center, and along " x " Direction of principal axis and adjacent hole interval identical distance.Net effect with these non-angularly holes 246 be overall cross-flow mode more To be uniform.By contrast, when equiangularly mode spacer holes, because fringe region is by with than the hole needed for uniform cross flow more Many holes, therefore the crossing current of heart upper will be less than the crossing current above edge region in the substrate.

In some embodiments, further flow over by chip in the direction for the catholyte discharged from crossing current shower nozzle 242 Confinement ring 210 is controlled.In some embodiments, the ring 210 prolongs above the whole circumference of the resistive plate 206 of ion of trough of belt Stretch.In some embodiments, as shown in Fig. 3 A, 3B and 4, the cross section of crossing current confinement ring 210 is L- shapes.The shape can be chosen Select to match the basal surface of substrate holder/cup 254.In some embodiments, chip crossing current confinement ring 210 includes a series of all The stream director element of fin 266 etc is such as oriented, the outlet opening 246 of the stream director element and the shower nozzle 242 that flows over is in fluid communication. The fin 266 is clearly shown, referring also to Fig. 3 A and 4 in Fig. 7.Fin 266 is oriented in the upper surface of chip crossing current confinement ring 210 Lower section and the fluid passage largely separated is limited between adjacent orientation fin 266.In some cases, fin The purpose of piece 266 is to redirect and constrain the stream discharged from crossing current showerhead hole 246, the stream is become from script radial inwardly direction Change the flow trace (left side is crossing current entrance side 250, and the right is outlet side 234) of " from left to right " into.This helps to set up base Linear cross-flow mode in sheet.Orientation fin 266 makes the catholyte that the hole 246 from crossing current shower nozzle 242 is discharged along by fixed To the fluid flow line orientation produced by the orientation of fin 266.In some embodiments, chip crossing current confinement ring 210 is all Orient fin 266 parallel to each other.This parallel setting helps to set up consistent cross-wind direction in crossing current manifold 226. In various embodiments, chip crossing current confinement ring 210 is set along both entrance sides 250 and outlet side 234 of crossing current manifold 226 Orientation fin 266.In other cases, fin 266 can be set only along the inlet region 250 of crossing current manifold 226.

As shown in Fig. 3 B and 4, catholyte the entering from chip crossing current confinement ring 210 flowed in crossing current manifold 226 Mouth region 250 flows to the outlet side 234 of the ring 210.In some embodiments, outlet side 234 have it is multiple can with entrance side On orientation fin 266 it is parallel or alignment orientation fin 266.Crossing current by the orientation fin 266 on outlet side 234 by being built Vertical passage, is then out the manifold 226 that flows over.Then it is described stream generally outward radially flow into cathode chamber another region and Wafer rack 254 and crossing current confinement ring 210 are flowed through, while fluid is retained and temporarily stored by the upper weir wall 282 of the film frame, then The fluid flows through weir wall 282 to collect and recycle.It is to be understood, therefore, that these figures (such as Fig. 3 A, 3B and 4) only show Go out catholyte and enter crossing current manifold and the part path in the whole path flowed out therefrom.It is noted that for example in figure In the embodiment described in 3B and 4, from crossing current manifold 226 discharge fluid do not flow through aperture or through with entrance side The similar passage of feeding passage 258 flow back to, but along the square outside flowing for being typically parallel to chip, reason is its meeting It is accumulated in foregoing reservoir area.

Fig. 6 embodiment is returned to, Fig. 6 shows to overlook the top view of crossing current manifold 226.This diagram depicts trough of belt from The position of embedded horizontal stream injection manifold 222 and shower nozzle 242 in the resistive plate 206 of son.Although being not shown on shower nozzle 242 Outlet opening 246, it should be understood that there are such outlet opening.It also show the fluid regulation bar for the injection manifold that flows over 270.Although being not provided with confinement ring 210 of flowing in the figure, the profile of crossing current confinement ring sealing gasket 238 is shown, should Crossing current confinement ring sealing gasket 238 is sealed between crossing current confinement ring 210 and CIRP 206 upper surface.Figure 6 illustrates Other elements include crossing current constraint ring fastener 218, film frame 274 and the screw hole 278 in CIRP206 anode-side (it can be used for such as cathode screen insert).

In some embodiments, in order to further optimize cross-flow mode, it can adjust the geometry of crossing current confinement ring outlet 234 Shape.For example, the open area in perimeter that can be by reducing crossing current confinement ring outlet 234 deviates to correct cross-flow mode To the situation at the edge of confinement ring 210.In some embodiments, outlet manifold 234 may include the section or mouth of separation, like horizontal stroke Stream injection manifold 222.In some embodiments, the quantity of outlet section is between about 1-12, or between about 4-6.Institute State mouth by orientation to be separated, different (generally adjacent) positions are occupied along outlet manifold.In some cases, can independent control Pass through the relative flow rate of each mouthful.Can be for example, by similar to the control-rod described in the description related with entrance fluid Control-rod 270 realizes the control.In another embodiment, the outlet can be passed through by the geometry control of outlet manifold Different sections fluid.For example, there is less open area in each near side edges and has in immediate vicinity more The outlet manifold of open area can produce solution fluid pattern, i.e., be there are near above-mentioned export center compared with multi-fluid, and Less fluid is there are near the outlet edge.It can also control to pass through the phase of the mouth in outlet manifold 234 using other methods Flow rate (such as pump, technology controlling and process valve).

As it was previously stated, by multiple passages 258 and 262 a large amount of catholytes of catholyte chamber will be entered discretely Guiding is into the resistive plate manifold 208 of ion of crossing current injection manifold 222 and trough of belt.In some embodiments, these lists are passed through The fluid of individual passage 258 and 262 is independently of one another via appropriate mechanism controls.In some embodiments, the mechanism includes Independent pump for fluid to be conveyed to single passage as described.In other embodiments, single-stage pump is used for main the moon Pole electrolyte manifolds charging, and can configure each in one or more passage and/or along the angled edge of the groove Kind adjustable flow restriction element, to adjust between each passage 258 and 262 and crossing current injection manifold 222 and CIRP Relative flow rate between the region of manifold 208.In the numerous embodiments described in these figures, the passage of independent control is being provided It is interior that one or more fluid regulation bar 270 (otherwise referred to as fluid control elements) is set.In the embodiment of description In, the fluid regulation bar 270 provides doughnut, and the ion for flowing to crossing current injection manifold 222 or trough of belt in catholyte is resistive During plate manifold 208, catholyte is compressed in the doughnut.In fully retracted state, the convection current of fluid regulation bar 270 Body there is no offer resistance.In complete use state, fluid regulation bar 270 provides fluid maximum resistance, and In some embodiments, all fluids are prevented to pass through passage.In intermediateness or position, flowed through in fluid in passage During restricted doughnut between the external diameter of footpath and fluid regulation bar, bar 270 allows the fluid compression of medium level.

In some embodiments, the regulation of fluid regulation bar 270 make it that the executing agency of electrolytic cell or controller promote Fluid flow direction crossing current injection manifold 222 or the resistive plate manifold 208 of ion for flowing to trough of belt.In some embodiments, in Jiang Yin Pole electrolyte be fed directly to crossing current injection manifold 222 passage 258 in, fluid regulation bar 270 it is separately adjustable so that this is held Row mechanism or controller can control fluid flow into the azimuthal component of crossing current manifold 226.

Fig. 8 A to Fig. 8 B show the crossing current injection manifold 222 and corresponding crossing current entrance 250 relative to plating cup 254 Viewgraph of cross-section.The position of crossing current entrance 250 is limited at least partially through the position of crossing current confinement ring 210.Specifically, Entrance 250 is considered the place terminated in the crossing current confinement ring 210 and started.In fig. 8 a, the terminating point of confinement ring 210 (and the starting point of entrance 250) is under Waffer edge, and in the fig. 8b, termination/starting point under plating cup simultaneously And from Waffer edge further outward radially (compared with the design in Fig. 8 A).In addition, the crossing current injection manifold 222 in Fig. 8 A exists There is step (arrow wherein generally to the left starts to ramp up), the step may enter in fluid to flow in crossing current annular chamber The point of manifold region 226 is formed about some vortex.In some circumstances, it may be advantageous to, by providing some distances (for example About 10-15 millimeters) so that solution stream becomes more uniform before wafer surface is flowed through, so that the stream near Waffer edge The expansion of body track minimizes and allows electroplating solution from the crossing current injection transition of manifold region 222 and enter the crossing current injection manifold Area 226.

Fig. 9 provides the close-up illustration of the intake section of electroplating device.The view is used to show the relatively several of some elements What structure.Distance (a) represents the height of crossing current manifold region 226.This is top (being placed with substrate above) and the CIRP of wafer rack The distance between 206 plane of upper space.Because Fig. 9 CIRP 206 does not include step or protuberance, described CIRP 206 upper space namely CIRP planes defined here.In certain embodiments, this distance is in about 2-10 Between millimeter, such as about 4.75 millimeters.Distance (b) represents the wafer surface of exposure and most basal surface (the chip guarantor of wafer rack The distance between hold the basal surface of cup).In certain embodiments, this distance is between about 1-4 millimeters, for example about 1.75 millimeters.Distance (c) represents the height of the fluid gap between the upper surface of crossing current confinement ring 210 and the bottom surface of cup 254. This gap between confinement ring 210 and the bottom of cup 254 provides space, to allow cup 254 to be rotated in electroplating process, And it is typically small as far as possible, goes out the gap to prevent fluid stopping body drain and be therefore limited in crossing current manifold region 226.One In a little embodiments, fluid gap is about 0.5 millimeter high.Distance (d) represents the height of fluid passage, and will flow over catholyte Liquid is sent in crossing current manifold 226.Distance (d) includes the height of crossing current confinement ring 210.In certain embodiments, distance (d) exists Between about 1-4 millimeters, such as about 2.5mm.Crossing current injection manifold 222, the spray with dispensing orifice 246 are also illustrated in fig .9 Head plate 242 and an orientation fin 266 being fixed in crossing current confinement ring 210.

Disclosed device can be configured to implement method as described herein.According to the present invention, suitable device includes Hardware and one or more controllers with the instruction for being used for control process operation described and illustrated herein.The device bag Include one or more controllers for being used to control, the control includes control chip positioning in cup 254 and cone, brilliant Piece is transmitted relative to the positioning of the resistive plate 206 of ion of trough of belt, the rotation of chip, the catholyte to crossing current manifold 226, given The catholyte transmission of CIRP manifolds 208, the catholyte transmission to crossing current injection manifold 222, fluid regulation bar 270 Stop and positioning, electric current supply, the mixing of bath composition, electrolyte to anode and chip and any other electrode are transmitted Timing, inlet pressure, electroplating bath pressure, bath temperature, chip temperature, and the special process performed by handling implement Other parameters.

System controller will typically comprise one or more storage devices and one or more processors, the processor Instruction is configured to carry out, so that described device can implement the method according to the invention.The processor can include centre Manage unit (CPU) or computer, analog and/or digital input/output connection, controllor for step-by-step motor plate and other similar departments Part.The system control can be connected to including the machine readable media for controlling the instruction for the treatment of in accordance with the present invention operation Device.Instruction for implementing suitable control operation is performed on the processor.These instructions can be stored in and controller In associated storage device, or they can be provided on network.In certain embodiments, system controller execution system Control software.

System controlling software can be configured in any suitable manner.For example, various handling implement component subroutines or Control object can be written to the operation of handling implement component necessary to control performs various handling implement processes.System control Software processed can be encoded with any suitable computer-readable programming language.

In certain embodiments, system controlling software includes being used to control the input/output of above-mentioned various parameters to control (IOC) sequence instruction.For example, each stage of electroplating process can include the one or more fingers performed by system controller Order.Instruction for setting for the process conditions in immersion processes stage can be included in corresponding submergence formulation stage. In certain embodiments, the electroplating formula stage can sequentially arrange, thus for the electroplating processes stage all instructions all simultaneously It is performed together with the processing stage.

Other computer softwares and/or program can be used in certain embodiments.Program or program for this purpose The example of section includes：Substrate positioning program, electrolyte composition control program, pressure control program, heater control program and Voltage source/current source control program.

In some cases, one or more function in the controller control following functions：Chip submergence is (flat Move, tilt, rotation), fluid transfer between container etc..Chip submergence can be controlled, for example, lifted by guide wafer Component, wafer inclination component and afer rotates component, so that it is moved in the desired manner.Controller can be with control container Between fluid transfer, for example by guide some valves open or close and some pumps open and close.Controller can be with Based on sensor export (when reaching certain threshold value such as when electric current, current density, potential, pressure), operation timing (special time open valve) for example in a procedure or instruction based on the reception from user at are come in terms of controlling these.

Device/technology described above can be combined damage with photoetching composition instrument or technique and for example manufacture or produce Semiconductor devices, display, light emitting diode, photovoltaic panel etc..Although in general, not necessarily, this instrument/technique will together Use or carry out in common manufacturing equipment.The photoetching composition of film generally include in following steps some or it is complete Portion, each step can be realized with a number of possible instrument：(1) spin coating or Spray painting tool are used by photoresist Agent is applied on workpiece (i.e. substrate)；(2) solidify photoresist using hot plate or heating furnace or UV tools of solidifying；(3) it is sharp The photoresist is set to be exposed to visible ray or ultraviolet or X-ray with the instrument such as chip stepper motor；(4) make against corrosion Agent is developed, optionally to remove resist using the instrument such as Wet bench, so that it is patterned；(5) pass through Transferred resist patterns into using dry method or plasmaassisted etch tool in counterdie or workpiece；And (6) are using for example The instrument such as RF or microwave plasma resist stripper removes resist.

The feature of the ion resistance element of trough of belt

Electric function

In some embodiments, the ion resistance element of trough of belt is close to substrate (negative electrode) nearby nearly constant and uniform Current source, and therefore can be referred to as high resistant virtual anodes (HRVA) in some contexts.Under normal circumstances, CIRP is placed Obtain close to chip.By contrast, the identical anode close to substrate is clearly not easy to nearly constant current density being supplied to crystalline substance Piece and across chip, but can only support the constant potential on anode metal surface so that electric current from anode surface to The less local electric current of net resistance of end (such as to the peripheral contacts on chip) is maximum.Therefore, although the ion resistance of trough of belt Property element be sometimes referred to as high resistant virtual anodes (HRVA), but this does not imply that in electrochemistry both can exchange. Under optimal operating conditions, CIRP can closer to and perhaps can be better known as virtual uniform current source, it has There is the nearly constant electric current from the upper plane across CIRP.And CIRP can be considered as " virtual current source " certainly, i.e. it It is the plane for producing electric current, therefore is considered " virtual anode ", because it can be counted as anode current generation Position or source, it is CIRP of a relatively high ion resistance (relative to electrolyte and relative to the area beyond CIRP Domain), it causes the electric current across its surface almost uniform, and causes further favourable, generally excellent wafer uniformity (compared with the metal anode of same, physical).The plate for gas current resistance with each passage of plate Comprising electrolyte specific electrical resistance increase (generally but not always have the electricity identical or almost like with catholyte Resistance), (cross-sectional area for being used for current flowing is less, such as by with less for the porosity of increased plate thickness and reduction Same diameter hole or hole with the less identical quantity of diameter, etc.) and increase.

CIRP be can for thickness between about 2-25mm material plate, for example, 12 millimeters thicks.Substantial amounts of but In not every embodiment, CIRP includes the through hole of larger numbers of micro-dimension (typically smaller than 0.04 inch), and it, which is accounted for, is less than About the 5% of CIRP volume, what the through hole spatially and on ion was mutually isolated so that they are not in CIRP master Interconnecting channel is formed in vivo.This through hole is commonly known as " through hole of non-interconnected ".They are generally in one direction or dimension is prolonged Stretch, this is often but is not required perpendicular to the plating clad can of chip that (in certain embodiments, non-interconnected hole is relative to almost parallel Chip in the preceding surfaces of CIRP is angled).Through hole is usually all practically parallel with each other.In certain embodiments, CIRP plates Thickness be uneven.CIRP plates can be thicker than the heart wherein in edge, or conversely.Leave chip farthest CIRP surface can be shaped as the local fluid of adjustment plate and the resistance of ion stream.This some holes is usually arranged to square Array, but cause spatially to have average uniform density or the other of hole to arrange to be also possible.The density in certain hole It can change, for example, increasing (or reduction) by making the interval from CIRP center to edge, so that with the center for leaving CIRP Distance it is different and increase (or reduction) resistance.Layout is the pattern in offset helical when other.These through holes and 3-D are more Pore network is completely different, and wherein passage extends in three-dimensional and forms interconnecting pore structure because through hole restructuring with it is therein The parallel ion stream in surface and fluid stream and straighten the path of both electric current and fluid stream towards wafer surface.However, at certain In a little embodiments, such porous plate of the interference networks with hole can be used to substitute CIRP.When from the upper surface of plate to During the distance of chip small (for example, gap is about the 1/10 of wafer radius size, is, for example, about 5 millimeters or smaller), electric current stream and The diverging of fluid stream is limited, assigns and aligned by CIRP path partiallies.

In certain embodiments, CIRP includes the step about extended together with the diameter of substrate (for example, the diameter of step can To be within about the 5% of substrate diameter, such as within about 1%).Step is defined as in CIRP opposite substrate side Bossing, it is with the substrate in plating substantially with extension.CIRP step part also includes the through hole with CIRP major part The through hole of matching.One example of the present embodiment is shown in Figure 10 A and 10B.The purposes of step 902 is reduction crossing current manifold 226 Highly, so as to increase the speed for the fluid advanced in the region without increasing volume flow rate.Step 902 can also be considered as Uplift plateau, and can be implemented the convex area of itself as CIRP 206.

In many cases, the diameter of step 902 should be more slightly smaller than the internal diameter of substrate holder 254 (for example, the external diameter of step can To be smaller than the internal diameter of substrate holder about 2-10 millimeters) and less than the internal diameter of crossing current confinement ring 210.Without this diameter difference (with distance (f) represents), throttle point may undesirably cup frame 254 and/or crossing current confinement ring 210 and step 902 it Between formed, fluid be difficult or impossible to flow up herein and into crossing current manifold 226.If it is the case, fluid is just The fluid gap 904 on crossing current confinement ring 210 and under the bottom surface of substrate holder/cup 254 can undesirably be passed through Effusion.This fluid gap 904 exists as the problem of practicality, because substrate holder 254 should be able to be relative to CIRP 206 and electroplating bath other elements and rotate.Preferably make the amount minimum of catholyte escaped by fluid gap 904 Change.Step 902 can have about 2-5 millimeter between height, for example, about 3-4 millimeters, its may correspond to about 1-4 millimeters between, Or the height of the crossing current manifold between about 1-2 millimeters or less than about 2.5 millimeters.

At step presence, flow over manifold height by as chip plating clad can and CIRP206 protrusion step 902 it Between distance and measure.In Figure 10 A, this is highly denoted as distance (e).Although substrate is not shown in Figure 10 A, It is appreciated that the plating clad can of substrate will be put on the lippacking part 906 of substrate holder 254.In some implementations, step With circular edge, preferably to allow fluid to be passed through crossing current manifold.In this case, step may include about 2-4 mm wides Transitional region, herein, the surface of step is rounded (rounded)/inclination.Although Figure 10 A do not show the step of sphering, But represent such transitional region by the place occupied apart from (g).In the inner radial of this transitional region, CIRP can be flat 's.As shown in Figure 10 B, CIRP non-bump can extend around CIRP whole periphery.

In other embodiments, CIRP may include the set of protuberance on the upper surface of which.Protuberance is defined as It is placed/is attached to the structure of the CIRP side in face of substrate, its crossing current extended between CIRP planes and chip Manifold.CIRP planes (also referred to as ion resistance element face) are defined as CIRP top surface, but do not include any protuberance. CIRP planes are the places that protuberance is connected to CIRP, are also that fluid leaves the place that CIRP enters crossing current manifold.This is implemented The example of example is shown in Figure 1A and Figure 11.Figure 1A shows the CIRP 150 with the protuberance 151 oriented perpendicular to cross-wind direction Isometric view.Figure 11 shows that the feature of the intake section of the electroplanting device with the CIRP 206 with protuberance 908 is regarded Figure.CIRP 206 may include the neighboring area without protuberance, to allow catholyte current upwards and enter crossing current manifold 226.The non-projecting portion region of this ancillary equipment can have the above-mentioned width related to the distance between step and cup frame. In many cases, protuberance substantially with the plating clad can of plated substrate is co-extensive stretches (for example, in the straight of CIRP protuberance region Footpath can within about the 5% of substrate diameter, or within about 1%).

Protuberance can be oriented in a variety of ways, but in many realizations, protuberance is with CIRP The form of long and thin rib between the row of hole, and it is oriented such that the length of protuberance and the crossing current through crossing current manifold hang down Directly.Have the CIRP of elongated protuberance close-up illustration as shown in figure 12 between being arranged in CIRP holes.Protuberance changes and chip Adjacent flow field, to bring up to the mass transfer of chip and improve the mass transfer uniformity in the entire surface of chip.In some cases, Protuberance can be machined into existing CIRP plates, or they can be formed with the same time that CIRP is manufactured.Such as Shown in Figure 12, protuberance may be arranged such that they do not block existing one-dimensional CIRP through holes 910.In other words, protuberance 908 width can be less than the distance between each row hole 910 in CIRP 206.In one example, in CIRP holes 910 Center to center is separated by 2.69 millimeters, and a diameter of 0.66 millimeter of hole.Therefore, protuberance will be less than about 2 mm wide (2.69- 2* (0.66/2) millimeter=2.03 millimeter).In some cases, protuberance is smaller than about 1 mm wide.In some cases, dash forward Go out portion with least about 3:1 length-width ratio.

In many realizations, protuberance is oriented such that its length perpendicular to or substantially perpendicular to through wafer surface Crossing current direction (direction for being also abbreviated as " z " herein sometimes).In some cases, protuberance at different angles or Series is oriented at different angles.

The shape, size and layout of various protuberances can be used.In certain embodiments, protuberance has base Perpendicular to the face in CIRP face in sheet, and in others are realized, protuberance has the face relative to CIRP of being oriented into one Determine the face of angle.In still another embodiment, protuberance could be formed such that they do not have any flat face.Some realities The shape and/or size and/or orientation of various protuberances can be used by applying example.

Figure 13 provides the example as the protuberance shape shown in the cross section of the protuberance 908 on CIRP 206. In some embodiments, protuberance is typically rectangle.In other embodiments, protuberance be triangle, cylinder or they Certain combination.Protuberance also can substantially carry the rectangle of the triangular tip of machining.In certain embodiments, protuberance It can include running through their hole, its orientation is arranged essentially parallel to through the direction of the crossing current of chip.

Figure 14 provides several examples of the protuberance with different types of through hole.Through hole can also be referred to as flow tune Nodule structure, otch or cut out portion.Through hole contribute to upset flow pattern so that stream in all directions (x directions, y directions and Z directions) spiral.Example (a) shows the protuberance with top rectangular pattern cut, and example (b) is shown with bottom rectangle figure The protuberance of case otch, example (c) shows the protuberance with pars intermedia rectangular patterns otch, and example (d), which is shown with one, is The protuberance of the otch in row circle/pattern of oval shapes hole, example (e) shows a series of protrusion of the otch with argyle design holes Portion, and example (f) show the protuberance with the alternate trapezoidal pattern otch in top and bottom.This some holes can be flatly Mutually it is in line, or as shown in example (d) and (f), they can offset from each other.

Figure 15 shows similar to the embodiment of Figure 14 example (e), otch with alternating type protuberance 908 Example.Herein, two kinds of otch, referred to as the first otch 921 and the second otch 922 have been used.In this embodiment, First otch 921 is that, in the bottom of protuberance 908, the second otch 922 is at the top of protuberance 908.Overall protuberance can To be of approximately 1-5 millimeters of height (a) and the thickness (b) about between 0.25-2 millimeters.First otch can have About in the height (c) between 0.2-3 millimeters and the length (d) about between 2-20 millimeters.Positioned at protuberance 908 The second otch 922 on top can also be of approximately the height (e) between 0.2-3 millimeters and be about at 2-20 millimeters Between length (f).Distance (g) (that is, the interval of the first notch 921) between the first adjacent otch 921 can be Between about 4-50 millimeters.Distance (h) (that is, the interval of the second otch) between the second adjacent otch 922 can also be Between about 4-50 millimeters.There is provided these sizes in order to understand, they are not intended to limitation.Wafer plane (w) is illustrated as On protuberance 908.It is crossing current manifold between the base portion and wafer plane (w) for the protuberance 908 being attached on CIRP 226。

Figure 16 shows the embodiment of the CIRP 206 with the type of protuberance 908 as shown in figure 15.In figure 16 also Show crossing current confinement ring 210.It is to be appreciated by one skilled in the art that in the range of the disclosed embodiments, can use many Plant different types of protuberance and otch.

Some embodiments are using the protuberance with gap (also sometimes referred to as non-projecting portion gap) so that two or More than two single/discontinuous protruding parts are in the CIRP holes of same row.Figure 17 is shown with non-protruding The CIRP 206 of the protuberance 908 in portion gap 912 example.Gap 912 in protuberance 908 can be designed as making Them are obtained not to be mutually aligned in cross-wind direction substantially.For example, in fig. 17, between the protuberance 908 of adjacent column, gap 912 do not line up mutually.Gap 912 it is this it is autotelic do not line up potentially contribute to encourage crossing current manifold in percussion flow and Crossing current mixing, to promote uniform electroplating effect.

In certain embodiments, there is protuberance between CIRP each row hole, and in other realizations, may have less Protuberance.For example, in certain embodiments, it may be possible to have protuberance every a row CIRP holes, or every four row CIRP holes have prominent Go out portion, etc..In a further embodiment, the position of protuberance is probably more random.

Optimization protuberance a relevant parameter be protuberance height, or in connection with this, the top of protuberance with The distance between bottom of wafer surface, or CIRP protuberance height and wafer channel height ratio.In some embodiments In, it is, for example, about 4-5 millimeters high between about 2-5 millimeters is high that protuberance, which is,.The top of protrusion and the bottom of chip it Between distance can be, for example, about 1-2 millimeters, or less than about 2.5 millimeters between about 1-4 millimeters.The height of protuberance The ratio between height with the manifold that flows over can be about 1:3 and 5:Between 6.In protuberance where, the height of crossing current manifold It is to be measured as the distance between the plating clad can of chip and CIRP plane, but does not include any protuberance.

Figure 18 shows the close-up cut away of the CIRP 206 with the protuberance 908 between CIRP 206 hole 910 One example of figure.Crossing current manifold 226 occupies the space between wafer plane (w) and CIRP planes 914.Flow over manifold 226 There can be the height between about 3-8 millimeters, such as between about 4-6 millimeters.In certain embodiments, this is highly It is about 4.75 millimeters.Protuberance 908 is placed between the row in the hole 910 in CIRP 206, and is less than horizontal stroke with as described above Flow the height (b) of the height (a) of manifold 226.

Figure 19 shows an alternate embodiment of the CIRP 206 with the protuberance 908 being oriented in a different manner Simplification top view.In the present embodiment, each protuberance 908 is manufactured by two parts 931 and 932.For clarity, Only one of which protuberance and one group of protuberance part are labeled.Part 931 and 932, which is orientated, to be mutually perpendicular to, and with being Identical or the length of substantially similar (for example, differing each other within about 10%).In other embodiments, these parts 931 With 932 can be oriented relative to it is other have different angles, and can have different length.In a further embodiment, Two parts 931 and 932 can be disconnected from each other so that have two kinds of (or more plant) different types of protuberances, each is relative It is angularly oriented in crossing current.In Figure 19, as illustrated, the direction of crossing current is from left to right.Each of protuberance 908 Part 931 and 932 is oriented at an angle relative to crossing current, shown in such as angle (a) and (b).Halve angle (a) and (b) Line is intended to the general direction for representing crossing current.In some cases, these angles are identicals or substantially similar (for example, phase Mutually within about 10%).Because protuberance 908 is not oriented in individually on the direction of crossing current, the present embodiment and example Example is different as shown in Figure 1A.However, because angle a and b are substantially similar, and because the length of protuberance part is basic It is similar, thus protuberance can be considered as on average be positioned at flow over direction it is vertical.

In all cases, CIRP is that, by the plate of the dielectric substance making in the non-hole of solid, the dielectric substance is in Ion and resistive.The material is also chemically stable in the electroplate liquid used.In some cases, CIRP is by ceramic material Material (for example, aluminum oxide, tin oxide, mixture of titanium oxide or metal oxide) or plastic material are (for example, polyethylene, poly- third Alkene, Kynoar (PVDF), polytetrafluoroethylene (PTFE), polysulfones, polyvinyl chloride (PVC), makrolon etc.) be made, with about The through hole of non-interconnected between 6000 and 12000.In many examples, the plate is substantially the (example with extension with chip Such as, when 300mm chips are used together, CIRP plates are with the diameter for being about 300 millimeters), and reside at chip, For example, being immediately below chip in chip electroplanting device directed downwardly.Preferably, the plating clad can of chip resides in immediate Within about 10 millimeters of CIRP surfaces, it is highly preferred that within about 5 millimeters.Therefore, the upper surface of the resistive plate of the ion of trough of belt can To be flat or substantially flat.In some cases, the upper surface and bottom surface of the resistive plate of the ion of trough of belt are all flat or bases This is flat.

CIRP another be characterized in through hole diameter or key dimension and itself and the distance between CIRP and substrate Relation.In certain embodiments, each through hole (or most through holes, or through hole average diameter) diameter be not more than greatly The distance on the nearest surface about from wafer electroplating surface to CIRP.Therefore, in such embodiments, it is placed in and leaves in CIRP When within about 5 millimeters of wafer electroplating surface, the diameter or key dimension of through hole should be no more than about 5 millimeters.

As described above, the overall ion of plate and the resistive of stream (can use depending on the thickness of plate and the overall porosity in hole In the ratio of the area by plate) and dimension/diameter.The plate of low-porosity will have higher impact flow velocity and ion resistive.Than The plate of more identical porosity, because there is more single current sources, one-dimensional hole with small diameter (and therefore have plurality The one-dimensional hole of amount) there will be the more microcosmic of electric current to be uniformly distributed on chip, it is used as the point being dispersed among in identical gap more Source is worked, also by with higher total pressure drop (high viscosity fluid resistance).

However, in some cases, as described above, ion-conductance baffle-wall is porous.Hole in plate can not be formed solely Vertical one-dimensional passage, but the insertion hole pattern that may be interconnected or may not interconnect can be formed on the contrary.It should be appreciated that as used herein , unless otherwise indicated, the resistive plate of ion (CIRP) of term trough of belt and the ion resistance element of trough of belt are intended to include this implementation Example.

Pass through the vertical current of through hole

Ion close to chip is resistive but presence of ion-permeable element (CIRP) 206 greatly reduces terminal effect Really, the uniformity of radially plating is improved in end effect is the related some applications of operation, for example, relative to the moon in groove For electric current in the electrolyte of pole is resistive, the electric current in inculating crystal layer is resistive big.CIRP is also provided by being used as stream diffusion simultaneously What manifold plate worked and had the upward electrolyte of guiding on a surface of a wafer is substantially spatially uniform percussion flow. If importantly, identical element is positioned to farther from chip, the improvement of the uniformity of ion stream and stream becomes and must shown Work ground is not present substantially or not.

Further, since transverse movement of the through hole of non-interconnected not in ion stream or fluid motion in CIRP, therefore in The heart is hindered within CIRP to the electric current at edge and stream motion, causes have further improvement on radial direction electroplating evenness.

It is worth noting that, in certain embodiments, CIRP plates can predominantly or exclusively be used as electrolyte flow resistance between groove, Stream control is so as to the element of flow shaping, sometimes referred to as turbocharging plate (turboplate).Whether tube sheet is for example by not flat The electric field for the electroplating additive that weighing apparatus terminal effects and/or modulation link together with the stream in groove or dynamical resistance regulation are radially The uniformity of deposition, can use this setting.Thus, for example, in TSV and WLP plating, wherein seed metal thickness one As larger (such as larger than 1000 Ethylmercurichlorendimides thick) and metal be deposited with very high speed, being uniformly distributed for electrolyte stream is very It is important, and the Radial Rotation Error control produced from the intraseminal ohmic voltage drop of chip may be without the need for going compensation (extremely Partially, because during using thicker Seed Layer, the inhomogeneities from center to edge is less serious).Therefore, CIRP plates are referred to alternatively as the resistive ion-permeable element of ion and as flow shaping element, and can be by changing gas current Flowing or change material convection current or change the two rise sedimentation rate correct function.

The distance between chip and slotted plate

In certain embodiments, wafer holders and related detent mechanism holding rotation chip make it be in close proximity to band The parallel upper surface of the ion resistance element of groove.During electroplating, substrate is normally placed in so that it is with the resistive member of ion Part is parallel or substantially parallel (for example, within about 10 °).Although substrate can have some features thereon, it is determined that substrate With ion resistance element it is whether substantially parallel when, only the generally planar shape of substrate just be considered.

In typical situation, spacing distance is about 1-10 millimeters, or about 2-8 millimeters.Plate to chip this it is small away from From can be manufactured on center, associated with the vicinity " image " in each hole of the pattern chip particularly near afer rotates Plating mode.In this case, the pattern (thickness or plated texture) of plating ring may produced at center wafer It is raw.In order to avoid this phenomenon, in some embodiments it is possible to (will be particularly in CIRP at the heart in the wafer and close to chip Center) each hole be configured with especially small size, be, for example, less than plate to about 1/5th of the gap of chip.When with Wafer rotational is when coupling together, and small pore-size allows to carry out the time from the flow velocity of the impact fluid on plate as jet Equalization, and small-scale heterogeneity (for example, those of micron dimension) has been reduced or avoided.Arranged in spite of above-mentioned prevention Apply, according to the property of used electroplating bath (for example, specific metal deposit, electrical conductivity and used bath additive), In some cases, under the pattern of Microinhomogeneity deposition may be susceptible to time average exposure as variable thickness and short range into Occur as pattern (for example, with around shape of " buphthalmos " of center wafer) and corresponding to each hole pattern used (for example, Form center ring).If limited hole pattern creates impact stream mode that is uneven and influenceing deposition, such case may Occur.In this case, it has been found that guiding crossing current is through center wafer and/or modification just at center and/or center The normal mode in neighbouring hole all largely eliminates the microcosmic heteropical any mark that otherwise can be found there As.

The porosity of slotted plate

In various embodiments, the resistive plate of the ion of trough of belt has sufficiently low porosity and the size in hole, to provide The speed of the exhaust back pressure of sticky fluid resistance under the volume flow speed of normal operation and high vertical impact stream.In some situations Under, the about 1-10% resistive plate of trough of belt ion is the open area for allowing fluid to reach wafer surface.In certain embodiments, About 2-5% plate is open area.In a specific example, the open area of plate 206 is about 3.2%, and total effectively opens Mouth cross-sectional area is about 23 square centimeters.

The size in the hole of slotted plate

The porosity of the resistive plate of ion of trough of belt can be realized in a number of different manners.In various embodiments, it It is to be realized with the upright opening of many minor diameters.In some cases, plate is built by single " brill " hole, but by even What the sintered plate of continuous porous material was built.One example of such sintered plate is in [the attorney of U.S. Patent number 6964792 Volume NOVLP023] in be described, be incorporated herein entirety herein by quoting.In certain embodiments, the non-interconnected hole of brill With about 0.01 to 0.05 inch of diameter.In some instances, hole has about 0.02 to 0.03 inch of diameter.As above institute State, in various embodiments, hole has about 0.2 times of the clearance distance between the resistive plate of ion and chip of up to trough of belt Diameter.Hole cross section is typically round, but is not necessarily to so.In addition, in order to mitigate structure, all holes in plate can have Identical diameter.It is not necessary, however, to thus, when specific needs may require, the Individual Size in hole and local density can be with Plate surface and change.

As an example, one (is usually dielectric insulation and mechanically robust by suitable ceramics or plastic material Material) solid slab that is made has the substantial amounts of aperture provided wherein, is for example, at least about 1000 or at least about 3000 or at least about 5000 or at least about 6000 (having found that the hole of 9465 0.026 inch diameters is useful).Such as As being previously mentioned, some are designed with about 9000 holes.The porosity of plate is generally less than about 5% so that be necessary to set up Gao Chong The total flow velocity for hitting speed is simultaneously little.Compared with larger hole, contribute to create one on whole plate using less hole Big pressure drop, helps the rate of climb evenly by plate establishment.

Usually, uniform density is distributed with hole on the resistive plate of ion of trough of belt, is nonrandom.However, In some cases, the density in hole can change, particularly in radial directions.It is such as following detailed in a specific embodiment As thin description, in guiding fluid towards the region of the plate at the center of the substrate of rotation, there is the bigger density in hole and/or straight Footpath.In addition, in certain embodiments, the hole of electrolyte is guided in the center of rotation chip or close to the center of rotation chip Stream may be induced not rectangular relative to the surface of chip.In addition, hole pattern in this region can have non-homogeneous electricity The random distribution of plating " ring " or partly random distribution, to solve the possible phase between the hole of limited quantity and afer rotates Interaction.In certain embodiments, the hole density ratio close to current divider or the opening portion of confinement ring is in further from being connected Current divider or confinement ring opening portion trough of belt the resistive plate of ion region hole density it is low.

It should be understood that configuration described herein and/or method are exemplary in nature, and these specific embodiments or Example is not considered as restrictive meaning, because it is all possible to have many changes.Concrete example described herein Journey or method can represent one or more of arbitrary number processing strategy.Therefore, each shown action can be with shown Order, carry out in other order or concurrently, or be omitted in some cases.Similarly, process described above Order can change.

Subject of the present invention is included in various processes disclosed herein, system, configuration and further feature, function, moved Make and/or all novel and non-obvious combination of attribute and sub-portfolio and its any and all equivalent.

Embodiment and experiment

It is in analog result and chip test result indicate that, the disclosed embodiments can greatly improve the uniform of electroplating process Property.Figure 20 describes the summary of some experimental results of copper plating.Test in each of two different sedimentation rates Two different CIRP designs (with protuberance and without protuberance).

First CIRP designs are wherein not using step or the control design case of protuberance.It is fixed that 2nd CIRP designs include Position is positioned between the adjacent column in CIRP holes, in the set of 2.5 millimeters of upwardly-directed high protuberances of the side perpendicular to crossing current. The height of crossing current manifold is about 4.75 millimeters.Two copper sedimentation rates of test are 2.4 μm/min and 3.2 μm/min.In other words Say, the stream delivered during each experiment is the size of the stream required for depositing, about 2.4 or 3.2 μm/min of average out to gold Category.The electroplating chemical used in an experiment is the SC40 of the Le Si chemical companies (Enthone) from Connecticut State Xi Heiwen Chemicals, its sulfuric acid concentration for possessing about 140g/L and about 40g/L copper ion (Cu2+) concentration (coming from copper sulphate).In negative electrode The concentration of R1 and R2 additives in electrolyte is respectively 20mL/L and 12mL/L.The flow velocity of catholyte is about 20L/min. Substrate is rotated with about 4RPM speed.Crossing current confinement ring upper surface and electroplate cup lower surface between fluid gap be About 0.5mm.Electroplating processes are run at about 30 DEG C.Plating is measured at the multiple diverse locations for passing through the surface of each chip Bump height afterwards.

In all cases, bump height is all slightly thick slightly thin in the center close to chip near Waffer edge. However, being all that the thickness change of the CIRP with protuberance is smaller than control CIRP under two sedimentation rates.Therefore, carry The CIRP of protuberance shows being obviously improved in bump height thickness distribution.The situation of control and the situation of lug boss are total to Face property is substantially the same, it is anticipated that in violent mass transport (for example, being deposition rate to copper>4 μm/min) under conditions of be Protuberance is preferred.To given mould, the coplanarity of mould is defined as (1/2 × (maximum bump height-minimum protuberance height Degree)/be averaged bump height).The coplanarity for the chip reported in fig. 20 is that all moulds of given chip coplanar are averaged.This In the case of kind, to specific test chip, there are about 170 moulds.

Other analog results show that the validity of protuberance is included in U.S. Provisional Application No. 61/,736 499, By being incorporated into above-cited mode.

Other embodiments

Although the above is the complete description of specific embodiment, but it is also possible to using various modifications, replacing structure thing and wait Same scheme.Therefore, explanation and accompanying drawing above is not construed as limiting be defined by the appended claims of the invention Scope.

Claims

1. a kind of electroplanting device, it includes

(c) ion resistance element, it includes：

2. electroplanting device as claimed in claim 1, wherein the height of the step is between about 2-5mm.

3. electroplanting device as claimed in claim 2, wherein the height of the crossing current manifold is between about 1-4mm.

4. electroplanting device as claimed in claim 1, wherein the periphery of the step includes transitional region, in the transitional region The step is rounded.

5. electroplanting device as claimed in claim 4, wherein the transitional region has about 2-4mm width.

6. electroplanting device as claimed in claim 1, wherein the step is described a diameter of between about 2-10mm, its is small In the internal diameter of the substrate holder.

7. electroplanting device as claimed in claim 1, it further comprises the crossing current injection manifold for being fluidly connected to the entrance Region, wherein during electroplating, being reached after electrolyte leaves the crossing current injection manifold areas described in the substrate About the distance between 10-15mm is flowed before plating clad can.

8. electroplanting device as claimed in claim 1, wherein the crossing current manifold has about 15mm or smaller height.

9. a kind of ion of trough of belt with electroplanting device to be plated on material on the semiconductor wafer of normal diameter is resistive Plate, it includes：

10. a kind of method for plated substrate, it includes：

(d) substrate holder is rotated；And