CN106960911A - A kind of pair of photosensitive layer hybrid solar cell and preparation method thereof - Google Patents
A kind of pair of photosensitive layer hybrid solar cell and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 5
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 18
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 16
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 16
- 238000002207 thermal evaporation Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000001771 vacuum deposition Methods 0.000 claims description 12
- 239000002243 precursor Substances 0.000 claims description 11
- 238000009396 hybridization Methods 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 8
- 238000004062 sedimentation Methods 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 6
- 229910003472 fullerene Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 239000013557 residual solvent Substances 0.000 claims description 4
- 238000002604 ultrasonography Methods 0.000 claims description 4
- 238000007738 vacuum evaporation Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- LBGCRGLFTKVXDZ-UHFFFAOYSA-M ac1mc2aw Chemical compound [Al+3].[Cl-].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 LBGCRGLFTKVXDZ-UHFFFAOYSA-M 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229920000144 PEDOT:PSS Polymers 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 2
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- 238000006243 chemical reaction Methods 0.000 description 5
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
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- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 phthalocyanine compound Chemical class 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The present invention relates to a kind of pair of photosensitive layer hybrid solar cell and preparation method thereof, belong to novel thin film technical field of solar batteries.Hybrid solar cell of the present invention includes transparent conductive substrate, the first decorative layer, the first photosensitive layer, the second photosensitive layer, electron transfer layer, the second decorative layer and reflection electrode layer composition successively from down to up.The hybrid solar cell of the present invention possesses double photosensitive Rotating fields, and the first photosensitive layer is ClAlPc, and the second photosensitive layer is perovskite material CH3NH3PbX3(X is Cl, I or their mixing).Advantages and positive effects of the present invention：The photoelectric respone of battery is ended side and brings up to 900 nm from 800 nm by the described photosensitive layers of ClAlPc first, is added the absorption of battery, is improved device efficiency；Avoid traditional hole transmission layer PEDOT:PSS use, improves battery life, is conducive to the industrialization of perovskite solar cell.
Description
Technical field
The present invention relates to a kind of hybrid solar cell, belong to novel thin film technical field of solar batteries.
Background technology
The utilization solar energy of simple high effective green environmentally friendly is always that the mankind chase.Solar cell is one using solar energy
Individual good method.Compared with conventional solar cell, perovskite solar cell has that preparation technology is simple, low cost, efficiency
High the advantages of.Since PARK seminars in 2012 report that more than 500 hours life-span, efficiency reach 9.7% all solid state calcium titanium first
Since ore deposit solar cell, perovskite solar cell receives the very big concern of educational circles and industrial circle, quickly grows, goes back quilt
《Science》It is chosen as one of ten big sciences breakthrough in 2013.Perovskite solar cell is quickly grown in a few years, mesh
The efficiency of the perovskite solar cell of preceding report has breached 20%.
The use of the light-sensitive material most extensively with acquisition efficiency highest perovskite solar cell is CH3NH3PbX3(X is
Cl, I or their mixing), its light absorption range is in 300-800nm.At present, CH3NH3PbX3It is used as the perovskite of photosensitive layer
The short circuit current flow of solar cell can reach 25mA/cm2, the external quantum efficiency of device is in CH3NH3PbX3300-
800nm absorption region can reach more than 90%.Using only using only CH3NH3PbX3As under conditions of photosensitive layer, it is necessary to
The short circuit current flow for continuing to improve battery is extremely difficult, it is necessary to try to widen the light abstraction width of device.In sunshine about half
Energy near infrared region, and CH3NH3PbX3Near infrared region after 800nm does not almost absorb, and how to increase electricity
Pond is the problem of the light absorbs of near infrared region are one in the urgent need to address.On the other hand, in perovskite solar cell, often
Hole transmission layer PEDOT:PSS has stronger acidity, easily causes the corrosion of ITO electrodes, reduces the stability of battery
And the life-span.
For above-mentioned both sides problem, the present invention is adjusted from the structure of perovskite solar cell and the property of boundary material
Control is set out, it is proposed that hybrid solar cell of a kind of pair of photosensitive layer and preparation method thereof, has widened the absorption of perovskite battery
Scope, improves its opto-electronic conversion performance；Avoid hole transmission layer acid in traditional perovskite solar cell simultaneously
PEDOT:PSS use, improves the life-span of battery.
The content of the invention
The problem of for described in background technology, the invention provides a kind of pair of photosensitive layer hybrid solar cell and its system
Preparation Method, on the one hand the response range of perovskite solar cell is widened near infrared region, on the other hand avoid PEDOT:
PSS use, improves the life-span of device while reduction device cost.To achieve these goals, the present invention proposes following skill
Art scheme：
To achieve these goals, according to one aspect of the present invention there is provided a kind of pair of photosensitive layer hybrid solar cell, under
On by ITO electro-conductive glass, the first decorative layer, the first photosensitive layer, the second photosensitive layer, electron transfer layer, the second decorative layer and anti-
Radio pole is constituted, it is characterised in that the first described photosensitive layer is ClAlPc (Chloro-aluminum
Phthalocyanine), the second photosensitive layer is organic inorganic hybridization perovskite material CH3NH3PbX3(X be Cl, I or they
Mixing), the first described decorative layer and the first photosensitive layer are collectively as the second photosensitive layer CH3NH3PbX3Substrate and hole pass
It is defeated layer by layer.
Further, the ITO electro-conductive glass, square resistance 10-20 Ω, transmitance is in 80-90%.
Further, the first described decorative layer is MoO3, thickness is 2-10 nm.
Further, the first described photosensitive layer is ClAlPc, and thickness is 15-30 nm.
Further, the second described photosensitive layer is CH3NH3PbX3, thickness is 200-500 nm.
Further, described electron transfer layer is fullerene derivate film, and described fullerene derivate film is
C60、C70、PC60BM or PC70BM。
Further, the second described decorative layer is Bphen, BCP or LiF.
Further, described reflecting electrode is one kind in Au, Ag or Al, and reflecting electrode thickness is in 80-200 nm.
It is another aspect of this invention to provide that there is provided the preparation method of a kind of pair of photosensitive layer hybrid solar cell, it is special
Levy and be, this method comprises the following steps：
The processing of step (1) ITO electro-conductive glass
ITO electro-conductive glass is cleaned successively using acetone, glass cleaner, then each ultrasound in acetone, deionized water, isopropanol
Processing 10 minutes, after being dried up with nitrogen ultra violet lamp handle 10 minutes it is stand-by；
Step (2) vacuum deposition method prepares the first decorative layer
Vacuum is less than 5 × 10-4Vacuum condition under, be sequentially depositing one by the method for thermal evaporation in transparent conductive substrate
Layer MoO3It is used as the first decorative layer；First decorative layer thickness is controlled in 0.05 nm/s in 2-10 nm, sedimentation rate；
Step (3) vacuum deposition method prepares the first photosensitive layer
Vacuum is less than 5 × 10-4Vacuum condition under, in MoO3On first decorative layer, it is sequentially depositing by the method for thermal evaporation
One layer of ClAlPc is used as the first photosensitive layer；First photosensitive layer thickness is controlled in 0.05 nm/s in 10-30 nm, sedimentation rate；
Step (4) solwution method prepares the second photosensitive layer
Heating extremely dissolves abundant for 12 hours under the conditions of configuring organic inorganic hybridization perovskite precursor solution, 60 DEG C at room temperature, obtains
To organic inorganic hybridization perovskite precursor solution；Using sol evenning machine by the precursor solution rotary coating configured in ClAlPc
On first photosensitive layer；Made annealing treatment 60 minutes in 100 DEG C of heating plate, remove residual solvent and that crystal property is made is good
CH3NH3PbX3The photosensitive layer of perovskite second；
The preparation of step (5) electron transfer layer
20-50 nm C is grown by the method for thermal evaporation on the photosensitive layer of perovskite second60、C70Or will configure
PC60BM、PC70BM solution rotatings are coated on the photosensitive layer of perovskite second, and then annealing completes electric transmission in heating plate
The preparation of layer；
The preparation of the decorative layer of step (6) second
The above-mentioned substrate prepared is put into vacuum coating equipment, vacuum is less than 5 × 10-4Under the conditions of Pa, by LiF,
BPhen, BCP powder are deposited on electron transfer layer by way of vacuum evaporation；
The preparation of step (7) reflecting electrode
Al, Ag or the Au for depositing one layer of 80-200 nm by the method for thermal evaporation on the electron transport layer are used as reflecting electrode,
Obtain hybrid solar cell.
In general, compared to the prior art, mainly possesses following technological merit according to the technical concept of the present invention： (1)
ClAlPc substitutes conventional perovskite battery hole-transporting layer PEDOT as metal phthalocyanine compound, stable chemical nature:
PSS, can be improved the life-span of device, reduce the preparation cost of device.(2) ClAlPc possesses good cavity transmission ability,
ClAlPc HOIMO energy levels are in 5.3 eV or so, with CH3NH3PbX35.4 eV HOMO energy levels match very much, for
CH3NH3PbX3The collection in the hole of middle generation is highly beneficial, is conducive to improving battery efficiency.(3) light-generated excitons can in ClAlPc
To decompose, its decomposition has two approach：One approach exciton dissociation occurs in MoO3With the Schottky hetero-junctions of ClAlPc formation
Place, similar metal phthalocyanine compound and MoO3The document of schottky junction interface decomposition has been reported；Another approach is exciton
Decompose and occur in ClAlPc and CH3NH3PbX3Interface, this has benefited from CH3NH3PbX3Bipolarity and ClAlPc with
CH3NH3PbX3The suitability of energy level., can be by and ClAlPc light absorbs cutoff wavelength has been reached near the nm of near infrared region 900
The spectral response range of battery is from simple CH3NH3PbX3800 nm absorbed are widened to 900 nm, improve the short circuit electricity of device
Stream and energy conversion efficiency.
Brief description of the drawings
Fig. 1 is double photosensitive layer hybrid solar cell structural representations of the invention.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.In addition, technical characteristic involved in each embodiment of invention described below is only
Not constituting conflict each other can be mutually combined.
As shown in figure 1, solar cell is from the bottom to top by ITO electro-conductive glass, the first decorative layer, the first photosensitive layer, second
Photosensitive layer, electron transfer layer, the second decorative layer and reflecting electrode composition.
The ITO electro-conductive glass, square resistance 10-20 Ω, transmitance is in 80-90%.
The first described decorative layer is MoO3, thickness is 2-10 nm.
The thickness of the first described photosensitive layer ClAlPc is 15-30 nm.
The second described photosensitive layer CH3NH3PbX3Thickness be 200-500 nm.
The first described decorative layer and the first photosensitive layer are collectively as the second photosensitive layer CH3NH3PbX3Substrate and hole pass
It is defeated layer by layer.
Described electron transfer layer is fullerene derivate film, and described fullerene derivate film is C60、C70、
PC60BM or PC70BM。
The second described decorative layer is Bphen, BCP or LiF.
Described reflecting electrode is one kind in Au, Ag or Al, and reflecting electrode thickness is in 80-200 nm.
Example one
The processing of step (1) ITO electro-conductive glass
ITO electro-conductive glass is cleaned successively using acetone, glass cleaner, then each ultrasound in acetone, deionized water, isopropanol
Processing 10 minutes, after being dried up with nitrogen ultra violet lamp handle 10 minutes it is stand-by；
Step (2) vacuum deposition method prepares the first decorative layer
Vacuum is less than 5 × 10-4Vacuum condition under, be sequentially depositing one by the method for thermal evaporation in transparent conductive substrate
Layer MoO3It is used as the first decorative layer；First decorative layer thickness is controlled in 0.05 nm/s in 2 nm, sedimentation rate；
Step (3) vacuum deposition method prepares the first photosensitive layer
Vacuum is less than 5 × 10-4Vacuum condition under, in MoO3On first decorative layer, it is sequentially depositing by the method for thermal evaporation
One layer of ClAlPc is used as the first photosensitive layer；First photosensitive layer thickness is controlled in 0.05 nm/s in 30 nm, sedimentation rate；
Step (4) solwution method prepares the second photosensitive layer
Organic inorganic hybridization perovskite precursor solution is configured at room temperature, by quantitative CH3NH3I and PbI2In dimethylformamide
(DMF) dissolved in, heating extremely dissolves abundant for 12 hours under the conditions of 60 DEG C, obtains organic inorganic hybridization perovskite precursor solution；
Using sol evenning machine by the precursor solution rotary coating configured on the photosensitive layers of ClAlPc first；In 100 DEG C of heating plate
Annealing 60 minutes, removes residual solvent and the good CH of crystal property is made3NH3PbI3The photosensitive layer of perovskite second；
The preparation of step (5) electron transfer layer
50 nm C is grown by the method for thermal evaporation on the photosensitive layer of perovskite second60It is used as electron transfer layer；
The preparation of the decorative layer of step (6) second
The above-mentioned substrate prepared is put into vacuum coating equipment, vacuum is less than 5 × 10-4Under the conditions of Pa, by BPhen powder
Body is deposited on electron transfer layer by way of vacuum evaporation, and deposit thickness is 5 nm；
The preparation of step (7) reflecting electrode
The Al for depositing one layer of 200 nm by the method for thermal evaporation on the electron transport layer is used as reflecting electrode, obtains the hydridization sun
Can battery.
Example two
The processing of step (1) ITO electro-conductive glass
ITO electro-conductive glass is cleaned successively using acetone, glass cleaner, then each ultrasound in acetone, deionized water, isopropanol
Processing 10 minutes, after being dried up with nitrogen ultra violet lamp handle 10 minutes it is stand-by；
Step (2) vacuum deposition method prepares the first decorative layer
Vacuum is less than 5 × 10-4Vacuum condition under, be sequentially depositing one by the method for thermal evaporation in transparent conductive substrate
Layer MoO3It is used as the first decorative layer；The nm of first decorative layer thickness 10, sedimentation rate is controlled in 0.05 nm/s；
Step (3) vacuum deposition method prepares the first photosensitive layer
Vacuum is less than 5 × 10-4Vacuum condition under, in MoO3On first decorative layer, it is sequentially depositing by the method for thermal evaporation
One layer of ClAlPc is used as the first photosensitive layer；First photosensitive layer thickness is controlled in 0.05 nm/s in 15 nm, sedimentation rate；
Step (4) solwution method prepares the second photosensitive layer
Organic inorganic hybridization perovskite precursor solution is configured at room temperature, by quantitative CH3NH3I and PbCl2In dimethyl formyl
Dissolved in amine (DMF), heating extremely dissolves abundant for 12 hours under the conditions of 60 DEG C, obtains organic inorganic hybridization perovskite presoma molten
Liquid；Using sol evenning machine by the precursor solution rotary coating configured on the photosensitive layers of ClAlPc first；In 100 DEG C of heating plate
Upper annealing 60 minutes, removes residual solvent and the good CH of crystal property is made3NH3PbClXI3-XPerovskite second is photosensitive
Layer；
The preparation of step (5) electron transfer layer
Weigh a certain amount of PC60BM is dissolved in chlorobenzene, is made into 10-20mg/ml PC60BM chlorobenzene solutions, by what is configured
PC60BM solution rotatings are coated to CH3NH3PbClXI3-XOn the photosensitive layer of perovskite second, rotating speed is 1000-3000rpm, time 30-
60s, then makes annealing treatment 20 minutes in 70 DEG C of heating plates, completes the preparation of electron transfer layer.
The preparation of the decorative layer of step (6) second
The above-mentioned substrate prepared is put into vacuum coating equipment, vacuum is less than 5 × 10-4Under the conditions of Pa, by LiF powders
Deposited to by way of vacuum evaporation on electron transfer layer, deposit thickness is 0.5 nm；
The preparation of step (7) reflecting electrode
The Ag for depositing one layer of 100 nm by the method for thermal evaporation on the electron transport layer is used as reflecting electrode, obtains the hydridization sun
Can battery.
Prepare simultaneously using structure as ITO/PEDOT:PSS/CH3NH3PbClXI3-X/PC60BM/LiF/Ag comparative device, its
Middle PEDOT:PSS thickness is 40 nm, PEDOT:PSS preparation passes through rotary coating PEDOT:The PSS aqueous solution and 120
Annealed 20 minutes in DEG C heating plate, the preparation method of remaining each layer is identical with embodiment.Finally carry out the test of battery performance.
Under the irradiation of AM1.5 standard analogs sunshine, the mA/ of short-circuit current density 22.4 of the hybrid solar cell of embodiment is measured
cm2, energy conversion efficiency 12.2%, higher than the mA/cm of comparative device 20.22Short-circuit current density and 11.1% energy conversion effect
Rate.The life test of device is found simultaneously, after embodiment device is stored 1000 hours, still remains the 82% of starting efficiency, and right
Than device after storage 1000 hours, the 51% of starting efficiency is only remained.This has turned out double photosensitive Rotating fields of the present invention,
On the one hand the short circuit current flow and energy conversion efficiency of battery can be improved, on the other hand can improves the life-span of battery.
As it will be easily appreciated by one skilled in the art that the foregoing is only presently preferred embodiments of the present invention, it is not used to
The limitation present invention, any modification, equivalent and the improvement made within the spirit and principles of the invention etc., it all should include
Within protection scope of the present invention.
Claims (9)
1. a kind of pair of photosensitive layer hybrid solar cell, from down to up by ITO electro-conductive glass, the first decorative layer, the first photosensitive layer,
Second photosensitive layer, electron transfer layer, the second decorative layer and reflecting electrode composition, it is characterised in that the first described photosensitive layer is
ClAlPc (Chloro-aluminum phthalocyanine), the second photosensitive layer is organic inorganic hybridization perovskite material
CH3NH3PbX3(X is Cl, I or their mixing)；Described the first decorative layer and the first photosensitive layer is photosensitive collectively as second
Layer CH3NH3PbX3Substrate and hole transmission layer.
2. a kind of pair of photosensitive layer hybrid solar cell as claimed in claim 1, it is characterised in that the ITO electro-conductive glass,
Square resistance 10-20 Ω, transmitance is in 80-90%.
3. a kind of pair of photosensitive layer hybrid solar cell as claimed in claim 1, it is characterised in that the first described decorative layer
For MoO3, thickness is 2-10 nm.
4. a kind of pair of photosensitive layer hybrid solar cell as claimed in claim 1, it is characterised in that the first described photosensitive layer
ClAlPc thickness is 15-30 nm.
5. a kind of pair of photosensitive layer hybrid solar cell as claimed in claim 1, it is characterised in that the second described photosensitive layer
CH3NH3PbI3Thickness be 200-500 nm.
6. a kind of pair of photosensitive layer hybrid solar cell as claimed in claim 1, it is characterised in that described electron transfer layer
For fullerene derivate film, described fullerene derivate film is C60、C70、PC60BM or PC70BM。
7. a kind of pair of photosensitive layer hybrid solar cell as claimed in claim 1, it is characterised in that the second described decorative layer
For Bphen, BCP or LiF.
8. a kind of pair of photosensitive layer hybrid solar cell as claimed in claim 1, it is characterised in that described reflecting electrode is
One kind in Au, Ag or Al, reflecting electrode thickness is in 80-200 nm.
9. the preparation method of a kind of pair of photosensitive layer hybrid solar cell, it is characterised in that this method comprises the following steps：
The processing of step (1) ITO electro-conductive glass
ITO electro-conductive glass is cleaned successively using acetone, glass cleaner, then each ultrasound in acetone, deionized water, isopropanol
Processing 10 minutes, after being dried up with nitrogen ultra violet lamp handle 10 minutes it is stand-by；
Step (2) vacuum deposition method prepares the first decorative layer
Vacuum is less than 5 × 10-4Vacuum condition under, be sequentially depositing one layer by the method for thermal evaporation in transparent conductive substrate
MoO3It is used as the first decorative layer；First decorative layer thickness is controlled in 0.05 nm/s in 2-10 nm, sedimentation rate；
Step (3) vacuum deposition method prepares the first photosensitive layer
Vacuum is less than 5 × 10-4Vacuum condition under, in MoO3On first decorative layer, it is sequentially depositing by the method for thermal evaporation
One layer of ClAlPc is used as the first photosensitive layer；Deposit thickness is monitored by quartz crystal, the first photosensitive layer thickness in 10-30 nm,
Sedimentation rate is controlled in 0.05 nm/s；
Step (4) solwution method prepares the second photosensitive layer
Heating extremely dissolves abundant for 12 hours under the conditions of configuring organic inorganic hybridization perovskite precursor solution, 60 DEG C at room temperature, obtains
To organic inorganic hybridization perovskite precursor solution；Using sol evenning machine by the precursor solution rotary coating configured in ClAlPc
On first photosensitive layer；Made annealing treatment 60 minutes in 100 DEG C of heating plate, remove residual solvent and that crystal property is made is good
CH3NH3PbI3The photosensitive layer of perovskite second；
The preparation of step (5) electron transfer layer
20-50 nm C is grown by the method for thermal evaporation on the photosensitive layer of perovskite second60、C70Or will configure
PC60BM、PC70BM solution rotatings are coated on the photosensitive layer of perovskite second, and then annealing completes electric transmission in heating plate
The preparation of layer；
The preparation of the decorative layer of step (6) second
The above-mentioned substrate prepared is put into vacuum coating equipment, vacuum is less than 5 × 10-4Under the conditions of Pa, by LiF,
BPhen, BCP powder are deposited on electron transfer layer by way of vacuum evaporation；
The preparation of step (7) reflecting electrode
Al, Ag or the Au for depositing one layer of 80-200 nm by the method for thermal evaporation on the electron transport layer are used as reflecting electrode,
Obtain hybrid solar cell.
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