CN106978588B - An evaporation cover, an evaporation source, an evaporation device and an evaporation method - Google Patents

An evaporation cover, an evaporation source, an evaporation device and an evaporation method Download PDF

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CN106978588B
CN106978588B CN201710212406.XA CN201710212406A CN106978588B CN 106978588 B CN106978588 B CN 106978588B CN 201710212406 A CN201710212406 A CN 201710212406A CN 106978588 B CN106978588 B CN 106978588B
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evaporation
cover
strut
main shaft
vapor deposition
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CN106978588A (en
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李晓虎
王路
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BOE Technology Group Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明实施例提供一种蒸镀罩、蒸镀源、蒸镀装置及蒸镀方法,涉及真空蒸发镀膜领域,能够解决现有的点蒸镀源在蒸镀过程中对待蒸镀基板上蒸镀区域不同位置处的蒸镀膜层厚度不均匀的问题。包括:支撑轴。调节罩,调节罩侧边设置在支撑轴上,调节罩上包括有镂空区域,蒸发状态的蒸镀材料可透过镂空区域,调节罩上的蒸镀材料透过率由中心向边缘逐渐增大。其中,支撑轴可转动,以带动调节罩移动覆盖于蒸镀源出口。通过转动支撑轴,使通过侧边固定在支撑轴上的调节罩移动位置,从而使得调节罩能够覆盖于蒸镀源出口,以对由蒸镀源出口蒸发的蒸镀材料向待蒸镀基板上各个位置处的蒸发速率进行调节。

The embodiment of the present invention provides an evaporation cover, an evaporation source, an evaporation device, and an evaporation method, which relate to the field of vacuum evaporation coating, and can solve the problem that the existing point evaporation source needs to be evaporated on the evaporation substrate to be evaporated during the evaporation process. The problem of uneven thickness of the evaporated film layer at different positions in the area. Includes: Support shaft. The adjustment cover, the side of the adjustment cover is set on the support shaft, the adjustment cover includes a hollow area, the evaporation material in the evaporation state can pass through the hollow area, and the transmittance of the evaporation material on the adjustment cover gradually increases from the center to the edge . Wherein, the supporting shaft is rotatable to drive the adjustment cover to move and cover the outlet of the vapor deposition source. By rotating the support shaft, the position of the adjustment cover fixed on the support shaft through the side is moved, so that the adjustment cover can cover the outlet of the evaporation source, so as to direct the evaporation material evaporated from the outlet of the evaporation source to the substrate to be evaporated. The evaporation rate at each location is adjusted.

Description

一种蒸镀罩、蒸镀源、蒸镀装置及蒸镀方法An evaporation cover, an evaporation source, an evaporation device and an evaporation method

技术领域technical field

本发明涉及真空蒸发镀膜领域,尤其涉及一种蒸镀罩、蒸镀源、蒸镀装置及蒸镀方法。The invention relates to the field of vacuum evaporation coating, in particular to an evaporation cover, an evaporation source, an evaporation device and an evaporation method.

背景技术Background technique

真空蒸发镀膜是指在真空环境中,将待成膜物质加热蒸发或升华后,使其在低温工件或基片表面凝结或沉积,以形成镀层的工艺。待成膜物质在蒸镀坩埚内部加热蒸发或升华后,上升并通过蒸镀坩埚上方的蒸发孔发出,待蒸镀基板匀速通过蒸发孔出口处的位置,蒸发出的待成膜物质离开蒸镀坩埚后的加热后逐渐降温,蒸发运动的速度也逐渐降低,最终在待蒸镀基板的表面沉积形成膜层。Vacuum evaporation coating refers to the process of condensing or depositing the material to be filmed on the surface of a low-temperature workpiece or substrate after heating, evaporating or sublimating in a vacuum environment to form a coating. After the material to be filmed is heated, evaporated or sublimated inside the evaporation crucible, it rises and emits through the evaporation hole above the evaporation crucible. The substrate to be evaporated passes through the outlet of the evaporation hole at a uniform speed, and the evaporated material to be filmed leaves the evaporation hole. After the crucible is heated, the temperature is gradually lowered, and the speed of the evaporation movement is also gradually reduced, and finally a film layer is deposited on the surface of the substrate to be evaporated.

蒸镀装置的蒸镀源,根据蒸发孔的设置数量和排列方式来划分,可以分为点蒸镀源、线蒸镀源和面蒸镀源。点蒸镀源是在蒸镀坩埚上方仅有一个蒸发孔,成膜区域为以该蒸发孔为中心的一个较小范围,通常应用于对尺寸较小的膜层的蒸镀成膜。线蒸镀源指的是在蒸镀坩埚上方呈线性排列多个蒸发孔,在待蒸镀基板静止的情况下,通过线蒸镀源在待蒸镀基板上形成膜层的区域也为一条直线的形状。面蒸镀源指的是在蒸镀坩埚上方呈整面排布多个蒸发孔,以使得形成膜层的区域为与整面的蒸发孔相对应的整面区域。The evaporation sources of the evaporation device can be divided into point evaporation sources, line evaporation sources and surface evaporation sources according to the number and arrangement of evaporation holes. The point evaporation source has only one evaporation hole above the evaporation crucible, and the film forming area is a small area centered on the evaporation hole, which is usually applied to the evaporation and film formation of small-sized film layers. The line evaporation source refers to the linear arrangement of multiple evaporation holes above the evaporation crucible. When the substrate to be evaporated is stationary, the area where the film layer is formed on the substrate to be evaporated by the line evaporation source is also a straight line. shape. The surface evaporation source refers to arranging a plurality of evaporation holes on the entire surface above the evaporation crucible, so that the area where the film layer is formed is the entire area corresponding to the entire surface of the evaporation holes.

对于中小尺寸有机显示器件的小世代线,通常采用点蒸镀源进行蒸镀,中小尺寸待蒸镀基板在蒸镀过程中匀速旋转以平衡距离点蒸镀源较远位置处与距离点蒸镀源较近位置处蒸镀速率的差异,提高待蒸镀基板上各不同位置处的蒸镀膜层均匀性。但是这样只能够平衡待蒸镀基板上同一圆周区域内各处的膜层均匀性,对于其他不同位置之间的蒸镀速率的差异无法平衡调整,在待蒸镀基板上不同圆周区域之间仍然存在膜厚均匀性较差的问题。For the small-generation lines of small and medium-sized organic display devices, point evaporation sources are usually used for evaporation, and the small and medium-sized substrates to be evaporated are rotated at a constant speed during the evaporation process to balance the distance from the point evaporation source and the point evaporation. The difference in evaporation rate at positions near the source improves the uniformity of the evaporation film layer at different positions on the substrate to be evaporated. But this can only balance the uniformity of the film layer in the same circumferential area on the substrate to be evaporated, and the difference in evaporation rate between other different positions cannot be adjusted in balance. There is a problem of poor film thickness uniformity.

发明内容Contents of the invention

本发明实施例提供一种蒸镀罩、蒸镀源、蒸镀装置及蒸镀方法,能够解决现有的点蒸镀源在蒸镀过程中对待蒸镀基板上蒸镀区域不同位置处的蒸镀膜层厚度不均匀的问题。Embodiments of the present invention provide an evaporation cover, an evaporation source, an evaporation device, and an evaporation method, which can solve the problems of the existing point evaporation sources at different positions of the evaporation area on the evaporation substrate to be evaporated during the evaporation process. The problem of uneven coating thickness.

为达到上述目的,本发明的实施例采用如下技术方案:In order to achieve the above object, embodiments of the present invention adopt the following technical solutions:

本发明实施例的一方面,提供一种蒸镀罩,包括:支撑轴。调节罩,调节罩侧边设置在支撑轴上,调节罩上包括有镂空区域,蒸发状态的蒸镀材料可透过镂空区域,调节罩上的蒸镀材料透过率由中心向边缘逐渐增大。其中,支撑轴可转动,以带动调节罩移动覆盖于蒸镀源出口。An aspect of the embodiments of the present invention provides an evaporation cover, including: a support shaft. The adjustment cover, the side of the adjustment cover is set on the support shaft, the adjustment cover includes a hollow area, the evaporation material in the evaporation state can pass through the hollow area, and the transmission rate of the evaporation material on the adjustment cover gradually increases from the center to the edge . Wherein, the supporting shaft is rotatable to drive the adjustment cover to move and cover the outlet of the vapor deposition source.

进一步的,调节罩为包括有多个通孔的盖板,盖板上单位面积内通孔面积所占的比例由中心向边缘逐渐增大。其中,多个通孔孔径相同,且盖板上单位面积内通孔的分布密度由中心向边缘逐渐增大;或者,多个通孔在盖板上单位面积内的分布密度相同,且多个通孔的孔径由中心向边缘逐渐增大。Further, the adjustment cover is a cover plate including a plurality of through holes, and the proportion of the area of the through holes per unit area on the cover plate gradually increases from the center to the edge. Among them, the apertures of the multiple through holes are the same, and the distribution density of the through holes per unit area on the cover plate gradually increases from the center to the edge; or, the distribution density of the multiple through holes per unit area on the cover plate is the same, and the multiple through holes The diameter of the through hole gradually increases from the center to the edge.

进一步的,本发明实施例的蒸镀罩还包括遮挡罩,遮挡罩侧边设置在支撑轴上,支撑轴可转动,以带动遮挡罩移动覆盖于蒸镀源出口。Further, the evaporation cover in the embodiment of the present invention further includes a shielding cover, the sides of the shielding cover are arranged on the support shaft, and the support shaft is rotatable to drive the shielding cover to move and cover the outlet of the evaporation source.

优选的,支撑轴包括主轴以及在主轴轴线的垂直平面内与主轴相连接的第一支杆和第二支杆,遮挡罩的侧边通过第一支杆与主轴相连接,调节罩的侧边通过第二支杆与主轴相连接。Preferably, the support shaft includes a main shaft and a first strut and a second strut connected to the main shaft in a plane perpendicular to the axis of the main shaft, the side of the shield cover is connected to the main shaft through the first strut, and the side of the adjustment cover It is connected with the main shaft through the second support rod.

进一步的,第一支杆可绕主轴的周向转动。Further, the first support rod can rotate around the circumference of the main shaft.

进一步的,第二支杆可绕主轴的周向转动。Further, the second support rod can rotate around the circumference of the main shaft.

优选的,第一支杆和第二支杆均与主轴固定连接,主轴可绕其轴线转动,第一支杆的正投影与第二支杆的正投影之间夹角为30°-120°。Preferably, both the first pole and the second pole are fixedly connected to the main shaft, the main shaft can rotate around its axis, and the angle between the orthographic projection of the first pole and the orthographic projection of the second pole is 30°-120° .

本发明实施例的另一方面,提供一种蒸镀源,包括上述任一项的蒸镀罩,还包括蒸镀坩埚,蒸镀坩埚上设置有蒸镀源出口,蒸镀罩可转动并使得遮挡罩和/或调节罩覆盖于蒸镀源出口。Another aspect of the embodiments of the present invention provides an evaporation source, including any one of the above-mentioned evaporation covers, and also includes an evaporation crucible, an evaporation source outlet is arranged on the evaporation crucible, and the evaporation cover can be rotated so that The shielding cover and/or the adjusting cover cover the outlet of the evaporation source.

本发明实施例的再一方面,提供一种蒸镀装置,包括上述的蒸镀源,还包括控制器,控制器与支撑轴连接,控制支撑轴的转动。Still another aspect of the embodiments of the present invention provides an evaporation device, which includes the above-mentioned evaporation source, and further includes a controller connected to the support shaft to control the rotation of the support shaft.

本发明实施例的又一方面,提供一种蒸镀方法,应用于上述的蒸镀装置,包括,加热蒸镀坩埚,使蒸镀坩埚内的蒸镀材料受热气化;控制支撑轴转动,以使得遮挡罩和/或调节罩在支撑轴的带动下移动覆盖于蒸镀源出口。其中,支撑轴包括主轴以及在主轴轴线的垂直平面内与主轴相连接的第一支杆和第二支杆,遮挡罩的侧边通过第一支杆与主轴相连接,调节罩的侧边通过第二支杆与主轴相连接,控制支撑轴转动包括:控制第一支杆绕主轴的周向转动,或者,分别控制第一支杆和第二支杆绕主轴的周向转动。当第一支杆和第二支杆均与主轴固定连接,主轴可转动,且第一支杆和第二支杆的正投影之间夹角为30°-120°,控制支撑轴转动包括:控制主轴绕其轴线转动。Still another aspect of the embodiments of the present invention provides an evaporation method, which is applied to the above-mentioned evaporation device, including heating the evaporation crucible to vaporize the evaporation material in the evaporation crucible; controlling the rotation of the support shaft to Driven by the support shaft, the shield cover and/or the adjustment cover move to cover the outlet of the evaporation source. Wherein, the support shaft includes a main shaft and a first strut and a second strut connected to the main shaft in a plane perpendicular to the axis of the main shaft, the side of the shielding cover is connected to the main shaft through the first strut, and the side of the adjustment cover is passed through The second support rod is connected with the main shaft, and controlling the rotation of the support shaft includes: controlling the circumferential rotation of the first support rod around the main shaft, or respectively controlling the circumferential rotation of the first support rod and the second support rod around the main shaft. When both the first support rod and the second support rod are fixedly connected to the main shaft, the main shaft is rotatable, and the angle between the orthographic projections of the first support rod and the second support rod is 30°-120°, controlling the rotation of the support shaft includes: Controls the rotation of the spindle around its axis.

本发明实施例提供一种蒸镀罩、蒸镀源、蒸镀装置及蒸镀方法,包括:支撑轴。调节罩,调节罩侧边设置在支撑轴上,调节罩上包括有镂空区域,蒸发状态的蒸镀材料可透过镂空区域,调节罩上的蒸镀材料透过率由中心向边缘逐渐增大。其中,支撑轴可转动,以带动调节罩移动覆盖于蒸镀源出口。通过转动支撑轴,使通过侧边固定在支撑轴上的调节罩移动位置,从而使得调节罩能够覆盖于蒸镀源出口,以对由蒸镀源出口蒸发的蒸镀材料向待蒸镀基板上各个位置处的蒸发速率进行调节。An embodiment of the present invention provides an evaporation cover, an evaporation source, an evaporation device, and an evaporation method, including: a support shaft. The adjustment cover, the side of the adjustment cover is set on the support shaft, the adjustment cover includes a hollow area, the evaporation material in the evaporation state can pass through the hollow area, and the transmission rate of the evaporation material on the adjustment cover gradually increases from the center to the edge . Wherein, the supporting shaft is rotatable to drive the adjustment cover to move and cover the outlet of the vapor deposition source. By rotating the support shaft, the position of the adjustment cover fixed on the support shaft through the side is moved, so that the adjustment cover can cover the outlet of the evaporation source, so as to direct the evaporation material evaporated from the outlet of the evaporation source to the substrate to be evaporated. The evaporation rate at each location is adjusted.

附图说明Description of drawings

为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.

图1为本发明实施例提供的一种蒸镀罩的结构示意图;Fig. 1 is a schematic structural diagram of an evaporation cover provided by an embodiment of the present invention;

图2为图1的俯视图(不包括待蒸镀基板和蒸镀掩模版);Figure 2 is a top view of Figure 1 (excluding the substrate to be evaporated and the evaporation mask);

图3为本发明实施例提供的一种蒸镀罩还包括遮挡罩的结构示意图;Fig. 3 is a schematic structural diagram of an evaporation cover provided by an embodiment of the present invention, which also includes a shielding cover;

图4为本发明实施例提供的一种蒸镀罩中调节罩的俯视图;Fig. 4 is a top view of an adjustment cover in an evaporation cover provided by an embodiment of the present invention;

图5为本发明实施例提供的一种蒸镀罩中还设置有第一支杆和第二支杆的结构示意图;Fig. 5 is a schematic structural diagram of a first pole and a second pole provided in an evaporation cover provided by an embodiment of the present invention;

图6为本发明实施例提供的一种蒸镀罩中第一支杆可绕主轴周向转动的结构示意图;Fig. 6 is a schematic structural diagram of a first support rod in an evaporation cover provided by an embodiment of the present invention that can rotate around the main shaft;

图7为本发明实施例提供的一种蒸镀罩中第一支杆和第二支杆均可分别绕主轴周向转动的结构示意图;Fig. 7 is a structural schematic diagram of a first support rod and a second support rod in an evaporation cover provided by an embodiment of the present invention, which can respectively rotate around the main shaft;

图8为本发明实施例提供的一种蒸镀罩中主轴可绕其轴线转动的结构示意图;Fig. 8 is a schematic structural diagram of a main shaft in an evaporation hood that can rotate around its axis according to an embodiment of the present invention;

图9a为图8的俯视图之一;Figure 9a is one of the top views of Figure 8;

图9b为图8的俯视图之二;Fig. 9b is the second top view of Fig. 8;

图10为本发明实施例提供的一种蒸镀源的结构示意图;Fig. 10 is a schematic structural diagram of an evaporation source provided by an embodiment of the present invention;

图11为本发明实施例提供的一种蒸镀方法的流程图之一;FIG. 11 is one of the flowcharts of an evaporation method provided by an embodiment of the present invention;

图12为本发明实施例提供的一种蒸镀方法的流程图之二;FIG. 12 is the second flow chart of an evaporation method provided by an embodiment of the present invention;

图13为本发明实施例提供的一种蒸镀方法的流程图之三;Fig. 13 is the third flowchart of an evaporation method provided by an embodiment of the present invention;

图14为本发明实施例提供的一种蒸镀方法的流程图之四。FIG. 14 is the fourth flowchart of an evaporation method provided by an embodiment of the present invention.

附图标记:Reference signs:

00-蒸镀罩;01-控制器;10-支撑轴;11-主轴;12-第一支杆;13-第二支杆;20-调节罩;21-盖板;30-蒸镀坩埚;40-待蒸镀基板;50-蒸镀掩模版;60-遮挡罩;A-单位面积;A1、A2、A3-例举第一、第二、第三单位面积;X-镂空区域;a-蒸镀源出口;b-通孔;c-主轴轴线;α-第一支杆正投影与第二支杆正投影之间的夹角;Ⅰ、Ⅱ、Ⅲ-蒸镀材料向待蒸镀基板不同位置处沉积的路径箭头。00-evaporation cover; 01-controller; 10-support shaft; 11-spindle; 12-first support rod; 13-second support rod; 20-regulating cover; 21-cover plate; 30-evaporation crucible; 40-substrate to be evaporated; 50-evaporation mask; 60-shielding mask; A-unit area; A1, A2, A3-enumerate the first, second, third unit area; X-hollow area; a- Evaporation source outlet; b-through hole; c-spindle axis; α-angle between the orthographic projection of the first pole and the orthographic projection of the second pole; Ⅰ, Ⅱ, Ⅲ-evaporation material to the substrate to be evaporated Path arrows deposited at different locations.

具体实施方式Detailed ways

下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

本发明实施例提供一种蒸镀罩,如图1所示,包括:支撑轴10。调节罩20,调节罩20侧边设置在支撑轴10上,调节罩20上包括有镂空区域X,蒸发状态的蒸镀材料可透过镂空区域X,调节罩20上的蒸镀材料透过率由中心向边缘逐渐增大。其中,支撑轴10可转动,以带动调节罩20移动覆盖于蒸镀源出口a。An embodiment of the present invention provides an evaporation cover, as shown in FIG. 1 , including: a support shaft 10 . The adjustment cover 20, the side of the adjustment cover 20 is set on the support shaft 10, the adjustment cover 20 includes a hollow area X, the evaporation material in the evaporation state can pass through the hollow area X, and the transmittance of the evaporation material on the adjustment cover 20 Gradually increases from the center to the edge. Wherein, the supporting shaft 10 is rotatable, so as to drive the adjustment cover 20 to move and cover the outlet a of the evaporation source.

需要说明的是,第一,如图1所示,调节罩20上至少包括有一个镂空区域X,镂空区域X位于蒸镀坩埚30的蒸镀源出口a的对应上方,此处所述的对应上方,指的是镂空区域X的正投影将蒸镀源出口a包括在内,通过蒸镀源出口a蒸发出的蒸镀材料向上蒸发后会分别由镂空区域X上对应位置透过后进一步向上蒸发。蒸发状态的蒸镀材料如图1中箭头所示,从蒸镀坩埚30的蒸镀源出口a向上蒸发后,通过调节罩20上的镂空区域X,最终能够通过蒸镀掩模版50在待蒸镀基板40上形成带有特定蒸镀图案的蒸镀膜层。It should be noted that, firstly, as shown in FIG. 1 , the adjustment cover 20 includes at least one hollowed-out area X, and the hollowed-out area X is located above the corresponding outlet a of the evaporation source a of the evaporation crucible 30 . The above refers to the orthographic projection of the hollow area X including the evaporation source outlet a, and the evaporation material evaporated through the evaporation source outlet a will evaporate upwards and then pass through the corresponding positions on the hollow area X and then further evaporate upwards . The evaporation material in the evaporated state is shown by the arrow in Figure 1. After evaporating upward from the evaporation source outlet a of the evaporation crucible 30, by adjusting the hollow area X on the cover 20, it can finally pass through the evaporation mask plate 50 in the area to be evaporated. An evaporation film layer with a specific evaporation pattern is formed on the plating substrate 40 .

第二,调节罩20用于对蒸镀坩埚30的蒸镀源出口a蒸发出的蒸镀材料的蒸镀速率进行调整,因此,调节罩20上的镂空区域X内各处的蒸镀材料透过率不相同。例如,如图1所示,待蒸镀基板40和蒸镀掩模版50位于蒸镀源出口a上方,在待蒸镀基板40和蒸镀掩模版50固定不动的情况下,在单位蒸镀时间内如图1中箭头所示,待蒸镀基板40上对应蒸镀源出口a中心的箭头Ⅰ位置处的蒸镀膜层最厚,其次,箭头Ⅱ位置处由于距离蒸镀源出口a中心较近,蒸镀膜层较厚,而箭头Ⅲ位置处由于距离蒸镀源出口a中心距离较远,蒸镀膜层较薄,这样就导致待蒸镀基板40上的蒸镀膜层厚度不均匀。对于通过点蒸镀源在待蒸镀基板40上制作蒸镀膜层来说,通常待蒸镀基板40和覆盖在待蒸镀基板40的蒸镀面一侧的蒸镀掩模版50在蒸镀过程中通过驱动装置带动进行匀速旋转,以提高待蒸镀基板40上制作的蒸镀膜层周边的膜层厚度均匀性,使待蒸镀基板40和蒸镀掩模版50以待蒸镀基板40的中心(如图1中点划线所示,)为旋转中心匀速转动,在待蒸镀基板40的一个转动周期内,待蒸镀基板40的中心位置始终保持箭头Ⅱ位置的蒸镀速率,以形成较厚的蒸镀膜层,而待蒸镀基板40的边缘位置的同一圆周区域,在一个转动周期内依次经过箭头Ⅲ位置和箭头Ⅱ位置,所能够形成的膜层较薄,因此,难以避免的,蒸镀材料在待蒸镀基板40的中心区域形成的蒸镀膜层仍然会比在待蒸镀基板40的周边区域形成的蒸镀膜层厚,待蒸镀基板40和蒸镀掩模版50匀速旋转也无法降低上述的膜厚差异。因此,设置调节罩20的蒸镀材料透过率由中心向边缘逐渐增大,由蒸镀坩埚30的蒸镀源出口a蒸发出的蒸镀材料在通过调节罩20上的镂空区域X时,通过调节罩20对蒸镀材料透过率的调节作用,降低了蒸镀材料在待蒸镀基板40中心区域和周边区域的沉积速率差异,从而能够提高待蒸镀基板40上的蒸镀膜层的厚度均匀性。Second, the adjustment cover 20 is used to adjust the evaporation rate of the evaporation material evaporated from the evaporation source outlet a of the evaporation crucible 30. Therefore, the penetration of the evaporation material everywhere in the hollow area X on the adjustment cover 20 Rates are not the same. For example, as shown in FIG. 1 , the substrate to be evaporated 40 and the evaporation reticle 50 are located above the outlet a of the evaporation source. As shown by the arrow in Fig. 1 within a certain period of time, the vapor-deposited film layer at the position of the arrow Ⅰ corresponding to the center of the vapor-deposition source outlet a on the substrate 40 to be vapor-deposited is the thickest. Nearly, the vapor-deposited film layer is relatively thick, while the distance from the center of the outlet a of the vapor-deposition source at the position indicated by arrow III is relatively thin, so that the thickness of the vapor-deposited film layer on the substrate 40 to be vapor-deposited is uneven. For making an evaporation film layer on the substrate to be evaporated 40 by a point evaporation source, usually the substrate to be evaporated 40 and the evaporation mask 50 covering one side of the evaporation surface of the substrate to be evaporated 40 are formed during the evaporation process. Driven by the driving device to rotate at a constant speed, to improve the thickness uniformity of the film layer around the vapor deposition film layer made on the substrate 40 to be vapor deposition, so that the substrate 40 to be vapor deposition and the vapor deposition mask plate 50 are centered on the substrate 40 to be vapor deposition. (as shown by the dotted line in FIG. 1, ) is the uniform rotation of the center of rotation. In one rotation period of the substrate to be evaporated 40, the center position of the substrate to be evaporated 40 always maintains the evaporation rate at the position of arrow II to form thicker vapor-deposited film layer, and the same circumferential area at the edge of the substrate 40 to be vapor-deposited passes through the arrow III position and the arrow II position sequentially within one rotation cycle, and the film layer that can be formed is relatively thin, so it is unavoidable , the evaporated film layer formed by the evaporated material in the central area of the substrate 40 to be evaporated will still be thicker than the evaporated film layer formed in the peripheral area of the substrate 40 to be evaporated, and the substrate 40 to be evaporated and the evaporation mask 50 rotate at a constant speed Also, the above-mentioned difference in film thickness cannot be reduced. Therefore, the transmittance of the evaporation material with the adjustment cover 20 gradually increases from the center to the edge, and the evaporation material evaporated from the evaporation source outlet a of the evaporation crucible 30 passes through the hollow area X on the adjustment cover 20 , By adjusting the role of the cover 20 in regulating the transmittance of the vapor deposition material, the difference in the deposition rate of the vapor deposition material between the central region and the peripheral region of the substrate to be vapor deposited 40 is reduced, thereby improving the efficiency of the vapor deposition film layer on the substrate to be vapor deposited 40. Thickness uniformity.

第三,本发明实施例的蒸镀罩中,对于调节罩20以及调节罩20上的镂空区域X的形状不做具体限定,只要能够满足调节罩20安装在支撑轴10上之后,能够完全覆盖蒸镀坩埚30的蒸镀源出口a上方即可。例如,如图2所示,调节罩20以及调节罩20上的镂空区域X均为圆形,圆形的调节罩20的一侧边缘固定在支撑轴10上,以使得镂空区域X位于完全覆盖蒸镀坩埚30的蒸镀源出口a(图2中虚线圆所示)上方的位置。Third, in the evaporation cover of the embodiment of the present invention, there is no specific limitation on the shape of the adjustment cover 20 and the hollow area X on the adjustment cover 20, as long as the adjustment cover 20 can be completely covered after it is installed on the support shaft 10. Above the vapor deposition source outlet a of the vapor deposition crucible 30 may be sufficient. For example, as shown in Figure 2, both the adjustment cover 20 and the hollowed-out area X on the adjustment cover 20 are circular, and one side edge of the circular adjustment cover 20 is fixed on the support shaft 10, so that the hollow area X is completely covered. The position above the vapor deposition source outlet a (shown by the dotted circle in FIG. 2 ) of the vapor deposition crucible 30 .

第四,支撑轴10可转动,调节罩20可以在支撑轴10转动的带动下,以支撑轴10为中心在同一水平面内旋转,以使得在需要使用时,将调节罩20旋转至覆盖蒸镀坩埚30的蒸镀源出口a上方位置处,并且可以在不使用时,旋转调节罩20远离蒸镀坩埚30的蒸镀源出口a上方位置。Fourth, the support shaft 10 is rotatable, and the adjustment cover 20 can be driven by the rotation of the support shaft 10 to rotate in the same horizontal plane with the support shaft 10 as the center, so that when needed, the adjustment cover 20 can be rotated to cover the evaporation The position above the evaporation source outlet a of the crucible 30 , and when not in use, the rotating adjustment cover 20 is away from the position above the evaporation source outlet a of the evaporation crucible 30 .

本发明实施例提供一种蒸镀罩,包括:支撑轴。调节罩,调节罩侧边设置在支撑轴上,调节罩上包括有镂空区域,蒸发状态的蒸镀材料可透过镂空区域,调节罩上的蒸镀材料透过率由中心向边缘逐渐增大。其中,支撑轴可转动,以带动调节罩移动覆盖于蒸镀源出口。通过转动支撑轴,使通过侧边固定在支撑轴上的调节罩移动位置,从而使得调节罩能够覆盖于蒸镀源出口,以对由蒸镀源出口蒸发的蒸镀材料向待蒸镀基板上各个位置处的蒸发速率进行调节。An embodiment of the present invention provides an evaporation cover, including: a support shaft. The adjustment cover, the side of the adjustment cover is set on the support shaft, the adjustment cover includes a hollow area, the evaporation material in the evaporation state can pass through the hollow area, and the transmission rate of the evaporation material on the adjustment cover gradually increases from the center to the edge . Wherein, the supporting shaft is rotatable to drive the adjustment cover to move and cover the outlet of the vapor deposition source. By rotating the support shaft, the position of the adjustment cover fixed on the support shaft through the side is moved, so that the adjustment cover can cover the outlet of the evaporation source, so as to direct the evaporation material evaporated from the outlet of the evaporation source to the substrate to be evaporated. The evaporation rate at each location is adjusted.

进一步的,如图3所示,本发明实施例的蒸镀罩还包括遮挡罩60,遮挡罩60侧边设置在支撑轴10上,支撑轴10可转动,以带动遮挡罩60移动覆盖于蒸镀源出口a。Further, as shown in FIG. 3 , the evaporation cover of the embodiment of the present invention also includes a shielding cover 60 , the side of the shielding cover 60 is set on the support shaft 10 , and the support shaft 10 is rotatable to drive the shielding cover 60 to move and cover the evaporation cover 60 . Plating source outlet a.

对待蒸镀基板40蒸镀膜层之前,或者在待蒸镀基板40的蒸镀完成之后,转动支撑轴10,如图3所示,遮挡罩60移动覆盖于蒸镀坩埚30的蒸镀源出口a之上,以阻挡蒸镀坩埚30内的蒸镀材料向外蒸发,这样一来,在蒸镀过程中更换待蒸镀基板40时,只需转动支撑轴10,将遮挡罩60移动覆盖于蒸镀坩埚30的蒸镀源出口a之上,封闭蒸镀源出口a,阻挡蒸镀材料向外蒸发,当待蒸镀基板40更换完成开始蒸镀时,再转动支撑轴10将调节罩20移动覆盖于蒸镀坩埚30的蒸镀源出口a之上,对蒸镀源出口a蒸发出的蒸镀材料沉积在待蒸镀基板40上各处的蒸镀速率进行调节。Before the evaporation of the film layer on the substrate 40 to be evaporated, or after the evaporation of the substrate 40 to be evaporated, the support shaft 10 is rotated, as shown in FIG. Above, to prevent the vapor deposition material in the vapor deposition crucible 30 from evaporating outward, so that when replacing the substrate 40 to be vapor deposited during the vapor deposition process, only need to rotate the support shaft 10 to move the shield 60 to cover the vapor deposition Above the evaporation source outlet a of the plating crucible 30, close the evaporation source outlet a to prevent the evaporation material from evaporating outward. When the evaporation substrate 40 to be replaced is completed and the evaporation starts, the support shaft 10 is then rotated to move the adjustment cover 20 Covering the evaporation source outlet a of the evaporation crucible 30 , the evaporation rate of the evaporation material evaporated from the evaporation source outlet a deposited on the substrate 40 to be evaporated is adjusted.

需要说明的是,遮挡罩60通常为整块的金属板材(如铁板),当金属板材覆盖在蒸镀坩埚30的蒸镀源出口a上时,蒸镀材料完全封闭,无法由蒸镀源出口a处向外蒸发,此外,在金属板材靠近蒸镀坩埚30的一侧还设置有网格状的金属丝,即当金属板材覆盖在蒸镀坩埚30的蒸镀源出口a上时,蒸发并被阻挡在金属板材表面的蒸镀材料能够被金属丝吸附收集,降低遮挡罩60对蒸镀源出口a遮挡的过程中被阻挡的蒸镀材料掉落与蒸镀坩埚30内的可能性。It should be noted that the shielding cover 60 is generally a whole metal plate (such as an iron plate). When the metal plate covers the evaporation source outlet a of the evaporation crucible 30, the evaporation material is completely closed and cannot be released by the evaporation source. Evaporate outward at the outlet a. In addition, a grid-shaped metal wire is also provided on the side of the metal sheet close to the evaporation crucible 30, that is, when the metal sheet covers the evaporation source outlet a of the evaporation crucible 30, the evaporation The vapor deposition material blocked on the surface of the metal plate can be absorbed and collected by the metal wire, reducing the possibility of the blocked vapor deposition material falling into the vapor deposition crucible 30 during the process of shielding the vapor deposition source outlet a by the shielding cover 60 .

进一步的,调节罩20为包括有多个孔径相同的通孔b的盖板21,盖板21上单位面积A内通孔b的面积所占的比例由中心向边缘逐渐增大。其中,如图4所示,多个通孔b孔径相同,且盖板21上单位面积A内通孔b的分布密度由中心向边缘逐渐增大;或者,多个通孔b在盖板21上单位面积A内的分布密度相同,且多个通孔b的孔径由中心向边缘逐渐增大。Further, the adjustment cover 20 is a cover plate 21 including a plurality of through holes b with the same diameter, and the proportion of the area of the through holes b in the unit area A of the cover plate 21 gradually increases from the center to the edge. Wherein, as shown in FIG. 4 , a plurality of through holes b have the same diameter, and the distribution density of the through holes b in the unit area A on the cover plate 21 gradually increases from the center to the edge; or, the plurality of through holes b in the cover plate 21 The distribution density in the upper unit area A is the same, and the apertures of the plurality of through holes b gradually increase from the center to the edge.

例如,如图4所示,在调节罩20的盖板21上有多个孔径相同的通孔b,单位面积A内通孔b的密度即决定了在该单位面积A内的蒸镀材料的透过速率,单位面积A内通孔b的密度越大,在该单位面积A内的蒸镀材料的透过速率越大,反之,则透过速率越小。例如,在由盖板21的中心向边缘排列的单位面积A1、A2、A3内,分别包括1个、4个和9个通孔b,这样一来,当调节罩20覆盖于蒸镀坩埚30的蒸镀源出口a之上,由蒸镀源出口a蒸发出的蒸镀材料通过调节罩20后,中心区域蒸发出的材料逐渐至边缘区域蒸发出的材料的比例即为1:4:9,通过调整盖板21上不同位置的单位面积A内通孔b的分布密度,可以调节通过调节罩20沉积于待蒸镀基板40上的蒸镀材料由中心区域到周边区域的蒸镀速率变化跨度。For example, as shown in Figure 4, there are a plurality of through-holes b with the same aperture on the cover plate 21 of the adjustment cover 20, and the density of the through-holes b in the unit area A determines the density of the evaporation material in the unit area A. The transmission rate, the greater the density of the through holes b in the unit area A, the greater the transmission rate of the evaporation material in the unit area A, and vice versa, the lower the transmission rate. For example, in the unit areas A1, A2, and A3 arranged from the center to the edge of the cover plate 21, 1, 4, and 9 through holes b are included respectively, so that when the regulating cover 20 covers the evaporation crucible 30 Above the evaporation source outlet a, after the evaporation material evaporated from the evaporation source outlet a passes through the regulating cover 20, the ratio of the material evaporated from the central area to the material evaporated from the edge area is 1:4:9 , by adjusting the distribution density of the through holes b in the unit area A at different positions on the cover plate 21, the change of the evaporation rate of the evaporation material deposited on the substrate 40 to be evaporated through the adjustment cover 20 from the central area to the peripheral area can be adjusted span.

此外,还可以设置多个通孔b在盖板21上单位面积A内的分布密度相同,且多个通孔b的孔径由中心向边缘逐渐增大,这样一来,由于位于中心部分的通孔b的孔径较小,越靠近边缘部分的通孔的孔径越大,当调节罩20覆盖于蒸镀坩埚30的蒸镀源出口a之上,由蒸镀源出口a蒸发出的蒸镀材料通过调节罩20后,中心区域蒸发出的材料较少,逐渐向边缘区域,蒸发出的材料逐渐增多,通过调整盖板21上不同位置处的通孔b的孔径大小,可以调节通过调节罩20沉积于待蒸镀基板40上的蒸镀材料由中心区域到周边区域的蒸镀速率的变化跨度。又或者,还可以将上述调节通孔b在盖板21上单位面积A内的分布密度与调节多个通孔b在盖板21上不同位置的孔径大小相结合,共同对蒸镀材料由中心区域到周边区域的蒸镀速率的变化跨度进行调节。In addition, the distribution density of the plurality of through holes b in the unit area A of the cover plate 21 can also be set to be the same, and the apertures of the plurality of through holes b gradually increase from the center to the edge. The aperture of hole b is smaller, and the aperture of the through hole closer to the edge part is larger. When the adjustment cover 20 covers the evaporation source outlet a of the evaporation crucible 30, the evaporation material evaporated from the evaporation source outlet a After passing through the adjusting cover 20, the material evaporated in the central area is less, and gradually toward the edge area, the material evaporated gradually increases. The variation span of the evaporation rate of the evaporation material deposited on the substrate to be evaporated 40 from the central area to the peripheral area. Alternatively, the above-mentioned adjustment of the distribution density of the through holes b in the unit area A on the cover plate 21 may be combined with the adjustment of the aperture sizes of the multiple through holes b at different positions on the cover plate 21, so as to jointly control the vapor deposition material from the center. The variation span of the evaporation rate from the region to the surrounding region is adjusted.

优选的,对于多个通孔b孔径相同,且盖板21上单位面积A内通孔b的分布密度由中心向边缘逐渐增大的调节方式,调节罩20上单位面积A内通孔b的分布密度在盖板21的中心位置与在边缘位置的比值范围为7:10-9:10。Preferably, for a plurality of through holes b with the same diameter, and the distribution density of the through holes b in the unit area A on the cover plate 21 gradually increases from the center to the edge, adjust the number of the through holes b in the unit area A on the cover 20 The ratio of the distribution density at the center of the cover plate 21 to the edge is in the range of 7:10-9:10.

这样一来,能够对点蒸镀源在向待蒸镀基板40上蒸镀材料时,由于蒸镀材料向待蒸镀基板40的中心区域和周边区域的沉积路程不同而导致的在待蒸镀基板40的中心区域沉积膜层比在待蒸镀基板40周边区域的沉积膜层厚的缺陷进行调节补偿,从而平衡待蒸镀基板40上中心区域和周边区域沉积膜层的厚度。若调节罩20上单位面积A内通孔b的分布密度在盖板21的中心位置与在边缘位置的比值范围小于7:10,可能由于调节补偿过度,使得待蒸镀基板40上产生中心区域沉积膜层的厚度小于周边区域沉积膜层厚度的问题;若调节罩20上单位面积A内通孔b的分布密度在盖板21的中心位置与在边缘位置的比值范围大于9:10,则可能由于调节补偿能力较弱,在进行调节补偿后,还存在待蒸镀基板40上中心区域沉积膜层的厚度大于周边区域沉积膜层厚度。In this way, when the point evaporation source is evaporating material on the substrate 40 to be evaporated, due to the difference in the deposition path of the evaporation material to the central area and the peripheral area of the substrate 40 to be evaporated The defect that the deposited film layer in the central area of the substrate 40 is thicker than the deposited film layer in the peripheral area of the substrate 40 to be evaporated is adjusted and compensated, so as to balance the thickness of the deposited film layer in the central area and peripheral area of the substrate 40 to be evaporated. If the ratio range of the distribution density of the through-holes b in the unit area A of the adjustment cover 20 at the center position of the cover plate 21 to the edge position is less than 7:10, it may be due to excessive adjustment compensation, so that a central area is generated on the substrate 40 to be evaporated. The thickness of the deposited film layer is less than the problem of the thickness of the deposited film layer in the peripheral area; if the distribution density of the through holes b in the unit area A on the adjustment cover 20 is greater than 9:10 at the center position of the cover plate 21 and at the edge position, then Possibly due to the weak adjustment and compensation ability, after the adjustment and compensation, the thickness of the deposited film in the central area on the substrate 40 to be evaporated is still greater than the thickness of the deposited film in the peripheral area.

优选的,如图5所示,支撑轴10包括主轴11以及在主轴11轴线c的垂直平面内与主轴11相连接的第一支杆12和第二支杆13,遮挡罩60的侧边通过第一支杆12与主轴11相连接,调节罩20的侧边通过第二支杆13与主轴11相连接。Preferably, as shown in FIG. 5 , the support shaft 10 includes a main shaft 11 and a first strut 12 and a second strut 13 connected to the main shaft 11 in a plane perpendicular to the axis c of the main shaft 11, and the side of the shield 60 passes through The first strut 12 is connected to the main shaft 11 , and the side of the adjustment cover 20 is connected to the main shaft 11 through the second strut 13 .

这样一来,能够通过第一支杆12和第二支杆13确定遮挡罩60和调节罩20的位置,以使得在支撑轴10转动至某一位置时,遮挡罩60或调节罩20能够完全的覆盖于蒸镀坩埚30的蒸镀源出口a之上,避免遮挡罩60或调节罩20直接固定在支撑轴10上时,遮挡罩60或调节罩20的侧边与支撑轴10连接的部分无法用于覆盖蒸镀源出口a的问题。In this way, the positions of the shade cover 60 and the adjustment cover 20 can be determined by the first pole 12 and the second pole 13, so that when the support shaft 10 rotates to a certain position, the shade cover 60 or the adjustment cover 20 can be fully adjusted. Covering the vapor deposition source outlet a of the evaporation crucible 30, avoiding the part where the side of the shielding cover 60 or the adjusting cover 20 is connected to the supporting shaft 10 when the shielding cover 60 or the adjusting cover 20 is directly fixed on the supporting shaft 10 It cannot be used to cover the problem of evaporation source outlet a.

进一步的,如图6所示,第一支杆12可绕主轴11的周向转动。Further, as shown in FIG. 6 , the first support rod 12 can rotate around the circumference of the main shaft 11 .

如图6所示,可以将第一支杆12和第二支杆13设置在同一垂直平面内,其中,第一支杆12以及与第一支杆12连接的遮挡罩60位于下方,第二支杆13以及与第二支杆13连接的调节罩20位于上方,在不进行蒸镀操作时,遮挡罩60覆盖蒸镀坩埚30的蒸镀源出口a上,调节罩20位于遮挡罩60的垂直上方,由于遮挡罩60的遮挡作用,蒸镀材料无法从蒸镀源出口a向外蒸发。需要对待蒸镀基板40进行蒸镀操作时,第一支杆12绕主轴的周向转动,以使得遮挡罩60远离蒸镀坩埚30的蒸镀源出口a,这样一来,蒸镀材料就能够通过蒸镀源出口a向外蒸发,并通过位于蒸镀坩埚的蒸镀源出口a上方的调节罩2-的蒸镀速率调节后,均匀的沉积在待蒸镀基板40上形成蒸镀膜层。在膜层蒸镀完成后,再通过使第一支杆12绕主轴的周向转动将遮挡罩60移动至覆盖蒸镀坩埚30的蒸镀源出口a上即可,从而无需移动调节罩20,即可实现对蒸镀源出口a的关闭和打开,以及在打开蒸镀源出口a时通过调节罩20对由蒸镀源出口a蒸发的蒸镀材料向待蒸镀基板40上各个位置处的蒸镀速率的调节。As shown in Figure 6, the first pole 12 and the second pole 13 can be arranged in the same vertical plane, wherein the first pole 12 and the shield cover 60 connected with the first pole 12 are located below, and the second The support rod 13 and the adjustment cover 20 connected with the second support rod 13 are located above. When the evaporation operation is not performed, the shield cover 60 covers the evaporation source outlet a of the evaporation crucible 30, and the adjustment cover 20 is located at the top of the shield cover 60. Vertically above, due to the shielding effect of the shielding cover 60 , the evaporation material cannot evaporate outward from the outlet a of the evaporation source. When the evaporation operation needs to be performed on the substrate 40 to be evaporated, the first support rod 12 rotates around the circumference of the main shaft, so that the shield cover 60 is far away from the evaporation source outlet a of the evaporation crucible 30, so that the evaporation material can be Evaporate outward through the evaporation source outlet a, and after the evaporation rate is adjusted by the adjustment cover 2- located above the evaporation source outlet a of the evaporation crucible, it is evenly deposited on the substrate to be evaporated 40 to form an evaporation film layer. After the evaporation of the film layer is completed, the shielding cover 60 can be moved to cover the evaporation source outlet a of the evaporation crucible 30 by rotating the first support rod 12 in the circumferential direction around the main shaft, so that there is no need to move the adjustment cover 20, The closing and opening of the evaporation source outlet a can be realized, and when the evaporation source outlet a is opened, the evaporation material evaporated by the evaporation source outlet a is directed to each position on the substrate 40 to be evaporated by the adjustment cover 20 Adjustment of evaporation rate.

进一步的,如图7所示,第二支杆13可绕主轴11的周向转动。Further, as shown in FIG. 7 , the second support rod 13 can rotate around the circumference of the main shaft 11 .

如图7所示,第一支杆12和第二支杆13均可分别绕主轴11的周向转动,这样一来,遮挡罩60和调节罩20分别通过第一支杆12和第二支杆13在主轴11上的设置位置更加灵活,即可同时设置于蒸镀源出口a的上方,也可以都设置在远离于蒸镀源出口a的上方,在需要使用的时候转动对应的支杆将遮挡罩60或调节罩20移动至蒸镀源出口a的上方。As shown in Figure 7, the first pole 12 and the second pole 13 can respectively rotate around the circumference of the main shaft 11, so that the shield cover 60 and the adjustment cover 20 pass through the first pole 12 and the second pole respectively. The setting position of the rod 13 on the main shaft 11 is more flexible, it can be set above the outlet a of the evaporation source at the same time, or both can be set above the outlet a of the evaporation source, and the corresponding support rod can be rotated when it needs to be used Move the shielding cover 60 or the adjusting cover 20 above the outlet a of the evaporation source.

优选的,如图8所示,第一支杆12和第二支杆13均与主轴11固定连接,主轴11可绕其轴线c转动。如图9a所示,其中,第一支杆12和第二支杆13不在同一垂直平面内。Preferably, as shown in FIG. 8 , both the first pole 12 and the second pole 13 are fixedly connected to the main shaft 11 , and the main shaft 11 can rotate around its axis c. As shown in Fig. 9a, the first strut 12 and the second strut 13 are not in the same vertical plane.

这样一来,如图9a所示,第一支杆12和第二支杆13均与主轴11之间固定连接,且第一支杆12和第二支杆13不在同一垂直平面内,从而遮挡罩60和调节罩20的投影也不重叠。主轴11可绕其轴线c转动,通过转动主轴11,能够将遮挡罩60或调节罩20转动至覆盖蒸镀坩埚30的蒸镀源出口a的上方,对由蒸镀源出口a蒸发出的蒸镀材料进行阻挡或速率调节。In this way, as shown in Figure 9a, both the first strut 12 and the second strut 13 are fixedly connected to the main shaft 11, and the first strut 12 and the second strut 13 are not in the same vertical plane, thereby blocking The projections of the cover 60 and the adjusting cover 20 also do not overlap. The main shaft 11 can rotate around its axis c. By rotating the main shaft 11, the shielding cover 60 or the adjustment cover 20 can be rotated to the top of the evaporation source outlet a covering the evaporation crucible 30. Plating material for blocking or rate regulation.

优选的,第一支杆12的正投影与第二支杆13的正投影之间夹角α为30°-120°。Preferably, the angle α between the orthographic projection of the first pole 12 and the orthographic projection of the second pole 13 is 30°-120°.

如图9a所示,第一支杆12的正投影与第二支杆13的正投影之间夹角α约为120°。若第一支杆12的正投影与第二支杆13的正投影之间夹角α小于30°,则会使得固定在第一支杆12上的遮挡罩60与固定在第二支杆13上的调节罩20之间投影重叠而影响调节罩20的速率调节效果,为了遮挡罩60和调节罩20之间投影不重叠,就需要延长第一支杆12和第二支杆13的长度,从而一方面增加蒸镀罩的体积,另一方面也提高主轴11转动的功耗;若第一支杆12的正投影与第二支杆13的正投影之间夹角α大于120°,则增加遮挡罩60和调节罩20的替换时间,并且在替换过程中导致蒸镀材料的浪费。As shown in FIG. 9 a , the angle α between the orthographic projection of the first pole 12 and the orthographic projection of the second pole 13 is about 120°. If the angle α between the orthographic projection of the first strut 12 and the orthographic projection of the second strut 13 is less than 30°, the shield cover 60 fixed on the first strut 12 and the second strut 13 will The overlapping projections between the adjustment covers 20 on the top affect the speed adjustment effect of the adjustment covers 20. In order to prevent the projections between the shielding cover 60 and the adjustment cover 20 from overlapping, it is necessary to extend the length of the first pole 12 and the second pole 13. Thus, on the one hand, the volume of the evaporation cover is increased, and on the other hand, the power consumption of the rotation of the main shaft 11 is also increased; if the angle α between the orthographic projection of the first pole 12 and the orthographic projection of the second pole 13 is greater than 120°, then The replacement time of the shielding cover 60 and the adjustment cover 20 is increased, and the evaporation material is wasted during the replacement process.

优选的,如图9b所示,第一支杆12的正投影与第二支杆13的正投影之间夹角α为90°。这样一来,一方面,在无需延长第一支杆12和第二支杆13的长度的前提下,能够保证遮挡罩60和调节罩20之间正投影不重叠,避免影响调节罩20的蒸镀速率调节效果;另一方面,遮挡罩60和调节罩20之间距离不远,在蒸镀过程中能够快速完成遮挡罩60和调节罩20之间的调换。Preferably, as shown in FIG. 9 b , the angle α between the orthographic projection of the first strut 12 and the orthographic projection of the second strut 13 is 90°. In this way, on the one hand, without extending the length of the first pole 12 and the second pole 13, it can ensure that the orthographic projections between the shielding cover 60 and the adjustment cover 20 do not overlap, so as to avoid affecting the evaporation of the adjustment cover 20. Plating rate adjustment effect; on the other hand, the distance between the mask 60 and the adjustment cover 20 is not far, and the exchange between the mask 60 and the adjustment cover 20 can be quickly completed during the evaporation process.

本发明实施例的另一方面,提供一种蒸镀源,如图10所示,包括上述任一项的蒸镀罩00,还包括蒸镀坩埚30,蒸镀坩埚30上设置有蒸镀源出口a,蒸镀罩00可转动并使得遮挡罩60和/或调节罩20覆盖于蒸镀源出口a。Another aspect of the embodiment of the present invention provides an evaporation source, as shown in FIG. 10 , including any one of the above-mentioned evaporation cover 00, and also includes an evaporation crucible 30, and an evaporation source is arranged on the evaporation crucible 30 Outlet a, the evaporation cover 00 can be rotated so that the shielding cover 60 and/or the adjustment cover 20 covers the evaporation source outlet a.

如图10所示,蒸镀材料在蒸镀坩埚30内加热至蒸发或升华状态,蒸镀坩埚30上设置有蒸镀源出口a,蒸发的蒸镀材料通过蒸镀源出口a向外蒸发,蒸镀罩00可转动并将遮挡罩60和/或调节罩20覆盖于蒸镀源出口a的位置处,当遮挡罩60覆盖于蒸镀源出口a上,或者遮挡罩60和调节罩20同时位于蒸镀源出口a上方时,蒸镀材料被遮挡而不能从蒸镀源出口a向外蒸发;当调节罩20位于蒸镀源出口a上方时,蒸镀坩埚30内通过蒸镀源出口a向外蒸发的蒸镀材料通过调节罩20的速率调节,能够较为均匀的在待蒸镀基板40上形成蒸镀膜层。As shown in FIG. 10 , the vapor deposition material is heated in the vapor deposition crucible 30 to an evaporation or sublimation state, and the vapor deposition crucible 30 is provided with an vapor deposition source outlet a, and the evaporated vapor deposition material evaporates outward through the vapor deposition source outlet a, The evaporation cover 00 can rotate and cover the shielding cover 60 and/or the adjustment cover 20 at the position of the evaporation source outlet a, when the shielding cover 60 covers the evaporation source outlet a, or the shielding cover 60 and the adjustment cover 20 When located above the evaporation source outlet a, the evaporation material is blocked and cannot evaporate outward from the evaporation source outlet a; when the regulating cover 20 is located above the evaporation source outlet a, the evaporation crucible 30 passes through the evaporation source outlet a The evaporation material evaporated outward is adjusted by adjusting the speed of the cover 20 , so that an evaporation film layer can be formed on the substrate 40 to be evaporated more uniformly.

本发明实施例的再一方面,提供一种蒸镀装置,如图10所示,包括上述的蒸镀源,还包括控制器01,控制器01与支撑轴10连接,控制支撑轴10的转动。Another aspect of the embodiment of the present invention provides an evaporation device, as shown in Figure 10, including the above-mentioned evaporation source, and also includes a controller 01, the controller 01 is connected to the support shaft 10, and controls the rotation of the support shaft 10 .

通过控制器01对支撑轴10的转动进行控制,当支撑轴10的主轴11转动,第一支杆12和第二支杆13与主轴11之间固定连接时,控制器01与主轴11连接,控制主轴11的转动时间和转动方向,当支撑轴10的主轴11固定,第一支杆12沿主轴11的周向转动,或第一支杆12和第二支杆13分别沿主轴11的周向转动时,控制器01与第一支杆12或者分别与第一支杆12和第二支杆13连接,控制第一支杆12或者分别控制第一支杆12和第二支杆13沿主轴11的周向转动的时间和方向。The rotation of the support shaft 10 is controlled by the controller 01. When the main shaft 11 of the support shaft 10 rotates and the first pole 12 and the second pole 13 are fixedly connected to the main shaft 11, the controller 01 is connected to the main shaft 11, Control the rotation time and direction of rotation of the main shaft 11. When the main shaft 11 of the supporting shaft 10 is fixed, the first pole 12 rotates along the circumference of the main shaft 11, or the first pole 12 and the second pole 13 rotate along the circumference of the main shaft 11 respectively. When rotating in the opposite direction, the controller 01 is connected with the first strut 12 or with the first strut 12 and the second strut 13 respectively, and controls the first strut 12 or respectively controls the first strut 12 and the second strut 13 along the The time and direction of the circumferential rotation of the main shaft 11.

应用本发明实施例的蒸镀装置向待蒸镀基板40上蒸镀膜层时,将待蒸镀基板40以及覆盖在待蒸镀基板40上的蒸镀掩模版50设置在蒸镀源出口a上方,通过蒸镀源出口a蒸发出的蒸镀材料向上蒸发并沉积在蒸镀掩模版50上,蒸镀掩模版50上镂空的位置处,蒸镀材料通过蒸镀掩模版50沉积在待蒸镀基板40上,待蒸镀完成后,移除蒸镀掩模版50后,在待蒸镀基板40上即形成了与蒸镀掩模版50上的图案相匹配的蒸镀膜层。在蒸镀源出口a上方设置有蒸镀罩00,蒸镀罩00上设置有调节罩20,当调节罩20覆盖于蒸镀源出口a上时,蒸镀材料能够通过调节罩20上镂空区域X进一步向上蒸发,同时,通过镂空区域X的蒸镀材料透过率由中心向边缘逐渐增大,这样一来,能够对直接通过蒸镀源出口a向待蒸镀基板40上各处沉积成膜的速率进行调整补偿,使得在待蒸镀基板40上形成的蒸镀膜层的均匀性得到提升,从而提高制作的显示面板的显示效果。When using the evaporation device of the embodiment of the present invention to evaporate a film layer on the substrate to be evaporated 40, the substrate to be evaporated 40 and the evaporation mask 50 covering the substrate to be evaporated 40 are arranged above the outlet a of the evaporation source , the evaporation material evaporated through the evaporation source outlet a is evaporated upwards and deposited on the evaporation mask 50, at the hollow position on the evaporation mask 50, the evaporation material is deposited on the surface to be evaporated through the evaporation mask 50 On the substrate 40 , after the evaporation is completed, after the evaporation mask 50 is removed, an evaporation film layer matching the pattern on the evaporation mask 50 is formed on the substrate 40 to be evaporated. An evaporation cover 00 is arranged above the outlet a of the evaporation source, and an adjustment cover 20 is arranged on the evaporation cover 00. When the adjustment cover 20 covers the outlet a of the evaporation source, the evaporation material can pass through the hollow area on the adjustment cover 20 X is further evaporated upwards, and at the same time, the transmittance of the evaporation material passing through the hollow area X gradually increases from the center to the edge. The rate of the film is adjusted and compensated, so that the uniformity of the evaporated film layer formed on the substrate to be evaporated 40 is improved, thereby improving the display effect of the manufactured display panel.

上述对蒸镀罩以及蒸镀源的描述说明中,已经对于包括上述蒸镀罩以及蒸镀源的蒸镀装置的结构和工作原理、工作状态进行了详细的说明,此处不再赘述。In the above description of the evaporation cover and the evaporation source, the structure, working principle and working state of the evaporation device including the above evaporation cover and the evaporation source have been described in detail, and will not be repeated here.

本发明实施例的又一方面,提供一种蒸镀方法,应用于上述的蒸镀装置,如图11所示,包括,S101、加热蒸镀坩埚30,使蒸镀坩埚30内的蒸镀材料受热气化。S102、控制支撑轴10转动,以使得遮挡罩60和/或调节罩20在支撑轴10的带动下移动覆盖于蒸镀源出口a。Still another aspect of the embodiments of the present invention provides an evaporation method, which is applied to the above-mentioned evaporation device, as shown in FIG. 11 , including, S101. Heating the evaporation crucible 30 to make the evaporation material Heated gasification. S102 , controlling the rotation of the support shaft 10 so that the shield cover 60 and/or the adjustment cover 20 moves to cover the evaporation source outlet a driven by the support shaft 10 .

需要说明的是,本发明实施例的蒸镀方法,对于步骤S101和步骤S102的先后顺序不做限定,可以先进行步骤S101后再进行步骤S102,也可以先进行步骤S102,然后再进行步骤S101,而且,步骤S102可以根据工艺需要进行一次或多次。此外,当蒸镀装置的结构为仅连接遮挡罩60的第一支杆12可沿主轴11的周向转动,在蒸镀初始状态时,遮挡罩60和调节罩均位于蒸镀源出口a的对应上方,当开始对待蒸镀基板40进行膜层蒸镀时,进行步骤S102,通过转动第一支杆12使得遮挡罩60远离蒸镀源出口a即可,第二支杆13连接的调节罩20始终位于蒸镀源出口a的对应上方,无需对其进行移动操作。It should be noted that, in the vapor deposition method of the embodiment of the present invention, there is no limitation on the order of step S101 and step S102, step S101 can be performed first and then step S102 can be performed, or step S102 can be performed first, and then step S101 can be performed , and, step S102 may be performed once or multiple times according to process requirements. In addition, when the structure of the vapor deposition device is such that only the first pole 12 connected to the shield cover 60 can rotate along the circumference of the main shaft 11, in the initial state of evaporation, the shield cover 60 and the adjustment cover are both located at the outlet a of the vapor deposition source. Corresponding to the upper side, when the film layer evaporation on the substrate 40 to be evaporated is started, step S102 is performed, and the shielding cover 60 is kept away from the outlet a of the evaporation source by rotating the first support rod 12. The adjustment cover connected to the second support rod 13 20 is always located above the outlet a of the vapor deposition source, and there is no need to move it.

例如,当先进行步骤S101时,首先加热蒸镀坩埚30,使蒸镀坩埚30内的蒸镀材料受热气化,气化的蒸镀材料向上蒸发并通过蒸镀源出口a向外蒸发,此时若遮挡罩60覆盖于蒸镀源出口a,则蒸镀材料被遮挡在蒸镀坩埚30内,在将待蒸镀基板40以及覆盖在待蒸镀基板40上的蒸镀掩模版50设置在预定的蒸镀位置时,进行步骤S102,控制支撑轴10转动,使原先覆盖于蒸镀源出口a的遮挡罩60远离,并使调节罩20转动至蒸镀源出口a上方,此时通过蒸镀材料通过调节罩20的调节作用后向待蒸镀基板40上沉积以形成蒸镀膜层。当对待蒸镀基板40上的膜层蒸镀完成后,再次进行步骤102,控制支撑轴10转动,使调节罩20远离蒸镀源出口a,并使遮挡罩60覆盖于蒸镀源出口a,以停止对待蒸镀基板40的蒸镀。For example, when step S101 is performed first, the evaporation crucible 30 is first heated, so that the evaporation material in the evaporation crucible 30 is heated and vaporized, and the vaporized evaporation material evaporates upwards and evaporates outward through the outlet a of the evaporation source. If the shielding cover 60 covers the evaporation source outlet a, the evaporation material is covered in the evaporation crucible 30, and the evaporation mask 50 covering the substrate 40 to be evaporated and the substrate 40 to be evaporated is set at a predetermined position. When the vapor deposition position is at the vapor deposition position, proceed to step S102, control the rotation of the support shaft 10, keep the shielding cover 60 that originally covered the vapor deposition source outlet a away, and rotate the adjustment cover 20 to the top of the vapor deposition source outlet a, at this time through the vapor deposition The material is deposited on the substrate to be evaporated 40 after being adjusted by the adjusting cover 20 to form an evaporated film layer. After the evaporation of the film layer on the substrate 40 to be evaporated is completed, step 102 is performed again, the rotation of the support shaft 10 is controlled, the adjustment cover 20 is kept away from the outlet a of the evaporation source, and the shielding cover 60 is covered on the outlet a of the evaporation source, to stop the evaporation on the substrate 40 to be evaporated.

进一步的,支撑轴10包括主轴11以及在主轴11轴线c的垂直平面内与主轴11相连接的第一支杆12和第二支杆13,遮挡罩60的侧边通过第一支杆12与主轴11相连接,调节罩20的侧边通过第二支杆13与主轴11相连接,如图12所示,控制支撑轴11转动包括:S201、控制第一支杆12绕主轴11的周向转动。或者,如图13所示,控制支撑轴11转动包括:S201'、分别控制第一支杆12和第二支杆13绕主轴11的周向转动。Further, the support shaft 10 includes a main shaft 11 and a first strut 12 and a second strut 13 connected to the main shaft 11 in a plane perpendicular to the axis c of the main shaft 11, and the side of the shielding cover 60 passes through the first strut 12 and The main shaft 11 is connected, and the side of the adjustment cover 20 is connected with the main shaft 11 through the second support rod 13. As shown in FIG. 12 , controlling the rotation of the support shaft 11 includes: S201. turn. Alternatively, as shown in FIG. 13 , controlling the rotation of the support shaft 11 includes: S201 ′, separately controlling the circumferential rotation of the first support rod 12 and the second support rod 13 around the main shaft 11 .

当蒸镀装置中第一支杆12可绕主轴11的周向转动的情况下,如图12所示,控制支撑轴11转动为S201、控制第一支杆12绕主轴11的周向转动。这样一来,可以使通过第二支杆13连接的调节罩20始终位于蒸镀源出口a上方,然后通过第一支杆12绕主轴11的周向转动,控制遮挡罩60遮挡或者远离蒸镀源出口a。当遮挡罩60遮挡蒸镀源出口a时,遮挡蒸镀材料向外蒸发,当遮挡罩60远离蒸镀源出口a时,位于蒸镀源出口a上方的调节罩20调节蒸镀材料向待蒸镀基板40上各处蒸发的速率。When the first support rod 12 in the evaporation device can rotate around the main shaft 11, as shown in FIG. In this way, the adjustment cover 20 connected by the second support rod 13 can always be located above the outlet a of the evaporation source, and then the first support rod 12 rotates around the main shaft 11 in the circumferential direction to control the shield cover 60 to block or move away from the evaporation source. Source outlet a. When the shielding cover 60 blocks the evaporation source outlet a, the evaporation material is blocked from evaporating outward. The rate of evaporation everywhere on the plated substrate 40.

当蒸镀装置中第二支杆13也可绕主轴11的周向转动的情况下,如图13所示,控制支撑轴11转动为S201'、分别控制第一支杆12和第二支杆13绕主轴11的周向转动。这样一来,可以使通过第一支杆12连接的遮挡罩60和通过第二支杆13连接的调节罩20在初始状态时位于主轴11的周向的任意位置,需要遮挡蒸镀源出口a或调节由蒸镀源出口a向外蒸发的蒸镀材料的蒸镀速率时,对应控制第一支杆12或者第二支杆13绕主轴11的周向转动,将遮挡罩60或调节罩20移动至蒸镀源出口a上方。When the second pole 13 in the evaporation device can also rotate around the circumference of the main shaft 11, as shown in Figure 13, the rotation of the supporting shaft 11 is controlled as S201', and the first pole 12 and the second pole are respectively controlled 13 rotates around the circumference of the main shaft 11. In this way, the shielding cover 60 connected by the first pole 12 and the adjustment cover 20 connected by the second pole 13 can be located at any position in the circumferential direction of the main shaft 11 in the initial state, and the evaporation source outlet a needs to be blocked. Or when adjusting the evaporation rate of the evaporation material evaporated from the outlet a of the evaporation source, correspondingly control the circumferential rotation of the first pole 12 or the second pole 13 around the main shaft 11, and adjust the shielding cover 60 or the adjustment cover 20 Move to above the vapor deposition source outlet a.

进一步的,第一支杆12和第二支杆13均与主轴11固定连接,主轴11可转动,且第一支杆12和第二支杆13不在同一垂直平面内,如图14所示,控制支撑轴11转动包括:S301、控制主轴11绕其轴线c转动。Further, both the first pole 12 and the second pole 13 are fixedly connected to the main shaft 11, the main shaft 11 is rotatable, and the first pole 12 and the second pole 13 are not in the same vertical plane, as shown in FIG. 14 , Controlling the rotation of the support shaft 11 includes: S301, controlling the rotation of the main shaft 11 around its axis c.

当主轴11转动带动固定连接在主轴11上的第一支杆12和第二支杆13的情况下,如图14所示,控制支撑轴11转动为S301、控制主轴11绕其轴线c转动。第一支杆12的正投影与第二支杆13的正投影之间的夹角设置在30°-120°之间,这样一来,需要遮挡蒸镀源出口a或调节由蒸镀源出口a向外蒸发的蒸镀材料的蒸镀速率时,控制主轴11绕其轴线c转动使就遮挡罩60或调节罩20移动至蒸镀源出口a上方即可。When the main shaft 11 rotates to drive the first strut 12 and the second strut 13 fixedly connected to the main shaft 11, as shown in FIG. The included angle between the orthographic projection of the first pole 12 and the orthographic projection of the second pole 13 is set between 30°-120°. In this way, it is necessary to block the evaporation source outlet a or adjust the outlet a of the evaporation source a. When the evaporation rate of the evaporation material evaporates outward, it is sufficient to control the rotation of the main shaft 11 around its axis c so that the shield cover 60 or the adjustment cover 20 moves above the outlet a of the evaporation source.

以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。The above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Anyone skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present invention. Should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be determined by the protection scope of the claims.

Claims (9)

1. a kind of vapor deposition cover characterized by comprising
Support shaft;
Cover is adjusted, adjusting cover side is arranged in the support shaft, includes hollowed out area on the adjusting cover, evaporates shape The evaporation material of state can pass through the hollowed out area, and the evaporation material transmitance adjusted on cover gradually increases from center to edge Greatly;
Wherein, the support shaft can be rotated, to drive the adjusting cover is mobile to be covered in evaporation source outlet;
It is described to adjust cover as the cover board that includes multiple through-holes, on the cover board ratio shared by unit area inner via hole area by Center is gradually increased to edge;
Wherein, the multiple through-hole aperture is identical, and on the cover board unit area inner via hole distribution density from center to side Edge is gradually increased;Alternatively, distribution density of the multiple through-hole on the cover board in unit area is identical, and the multiple logical The aperture in hole is gradually increased from center to edge.
2. vapor deposition cover according to claim 1, which is characterized in that further include hood for protecting rider, the hood for protecting rider side setting exists In the support shaft, the support shaft be can be rotated, to drive the hood for protecting rider is mobile to be covered in evaporation source outlet.
3. vapor deposition according to claim 2 cover, which is characterized in that the support shaft includes main shaft and in the spindle shaft The first strut and the second strut being connected in the vertical plane of line with the main shaft, the side of the hood for protecting rider pass through described the One strut is connected with the main shaft, and the side for adjusting cover is connected by second strut with the main shaft.
4. vapor deposition cover according to claim 3, which is characterized in that first strut can turn around the circumferential direction of the main shaft It is dynamic.
5. vapor deposition cover according to claim 4, which is characterized in that first strut and second strut can be around institutes State circumferentially rotating for main shaft.
6. vapor deposition according to claim 3 cover, which is characterized in that first strut and second strut with it is described Main shaft is fixedly connected, and the main shaft can be rotatable around its axis;
Angle is 30 ° -120 ° between first strut and the orthographic projection of second strut.
7. a kind of evaporation source, which is characterized in that covered including vapor deposition as claimed in any one of claims 1 to 6, further include vapor deposition earthenware Crucible, is provided with evaporation source outlet on the vapor deposition crucible, and the vapor deposition cover can be rotated and make hood for protecting rider and/or adjust cover to cover It is exported in the evaporation source.
8. a kind of evaporation coating device, which is characterized in that it further include controller including evaporation source as claimed in claim 7, the control Device and the support axis connection, control the rotation of the support shaft.
9. a kind of evaporation coating method is applied to evaporation coating device according to any one of claims 8, which is characterized in that including,
Heating vapor deposition crucible makes the evaporation material in the vapor deposition crucible by thermal evaporation;
Support shaft rotation is controlled, so that hood for protecting rider and/or adjusting, which cover on movement under the drive of the support shaft, is covered in vapor deposition Source outlet;
Wherein, support shaft includes main shaft and be connected in the vertical plane of the main-shaft axis with the main shaft first The side of bar and the second strut, hood for protecting rider is connected by first strut with the main shaft, and the side for adjusting cover passes through institute It states the second strut to be connected with the main shaft, the control support shaft rotation includes:
The first strut circumferentially rotating around the main shaft is controlled, alternatively, controlling first strut and described second respectively Strut is circumferentially rotated around the main shaft;
First strut and second strut are fixedly connected with the main shaft, and the main shaft can be rotated, and described first Angle is 30 ° -120 ° between strut and the orthographic projection of second strut, and the control support shaft rotation includes:
It is rotatable around its axis to control the main shaft.
CN201710212406.XA 2017-03-31 2017-03-31 An evaporation cover, an evaporation source, an evaporation device and an evaporation method Expired - Fee Related CN106978588B (en)

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