CN109509785B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN109509785B
CN109509785B CN201810052145.4A CN201810052145A CN109509785B CN 109509785 B CN109509785 B CN 109509785B CN 201810052145 A CN201810052145 A CN 201810052145A CN 109509785 B CN109509785 B CN 109509785B
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CN
China
Prior art keywords
trenches
semiconductor layer
electrode
field plate
trench
Prior art date
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Active
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CN201810052145.4A
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English (en)
Chinese (zh)
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CN109509785A (zh
Inventor
西胁达也
一关健太郎
相田喜久夫
大麻浩平
洪洪
松叶博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Publication of CN109509785A publication Critical patent/CN109509785A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

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  • Electrodes Of Semiconductors (AREA)
CN201810052145.4A 2017-09-14 2018-01-19 半导体装置 Active CN109509785B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-176264 2017-09-14
JP2017176264A JP6862321B2 (ja) 2017-09-14 2017-09-14 半導体装置

Publications (2)

Publication Number Publication Date
CN109509785A CN109509785A (zh) 2019-03-22
CN109509785B true CN109509785B (zh) 2022-06-28

Family

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Family Applications (1)

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CN201810052145.4A Active CN109509785B (zh) 2017-09-14 2018-01-19 半导体装置

Country Status (3)

Country Link
US (1) US20190081173A1 (2)
JP (1) JP6862321B2 (2)
CN (1) CN109509785B (2)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7157719B2 (ja) * 2019-09-09 2022-10-20 株式会社東芝 半導体装置の製造方法
JP7242486B2 (ja) * 2019-09-13 2023-03-20 株式会社東芝 半導体装置
CN115053352A (zh) * 2020-02-07 2022-09-13 罗姆股份有限公司 半导体装置
JP7297708B2 (ja) * 2020-03-19 2023-06-26 株式会社東芝 半導体装置
US11329150B2 (en) * 2020-04-14 2022-05-10 Nxp Usa, Inc. Termination for trench field plate power MOSFET
JP7337756B2 (ja) 2020-07-30 2023-09-04 株式会社東芝 半導体装置
JP7319754B2 (ja) * 2020-08-19 2023-08-02 株式会社東芝 半導体装置
JP7392613B2 (ja) * 2020-08-26 2023-12-06 株式会社デンソー 半導体装置
JP7392612B2 (ja) * 2020-08-26 2023-12-06 株式会社デンソー 半導体装置
US11621331B2 (en) * 2020-09-10 2023-04-04 Semiconductor Components Industries, Llc Electronic device including a charge storage component
JP7374871B2 (ja) * 2020-09-11 2023-11-07 株式会社東芝 半導体装置
JP7532172B2 (ja) * 2020-09-18 2024-08-13 株式会社東芝 半導体装置
JP7492438B2 (ja) * 2020-11-02 2024-05-29 株式会社東芝 半導体装置
JP7474214B2 (ja) * 2021-03-17 2024-04-24 株式会社東芝 半導体装置
DE112022000700T5 (de) * 2021-03-22 2023-11-09 Rohm Co., Ltd. Halbleiterbauteil
DE112022001150T5 (de) * 2021-03-26 2023-12-07 Rohm Co., Ltd. Halbleiterbauteil
JP7596216B2 (ja) 2021-05-27 2024-12-09 株式会社東芝 半導体装置
JP7739064B2 (ja) * 2021-06-25 2025-09-16 三菱電機株式会社 絶縁ゲートバイポーラトランジスタおよびゲートドライバ回路
JP7526152B2 (ja) 2021-09-15 2024-07-31 株式会社東芝 半導体装置
JP7720756B2 (ja) * 2021-09-21 2025-08-08 株式会社東芝 半導体装置
WO2023108350A1 (en) * 2021-12-13 2023-06-22 Huawei Technologies Co., Ltd. Trench fet device and method of manufacturing trench fet device
JP7726773B6 (ja) 2021-12-17 2025-09-19 株式会社東芝 半導体装置及びその製造方法
JP7692378B2 (ja) * 2022-02-15 2025-06-13 株式会社東芝 半導体装置
JPWO2024053486A1 (2) * 2022-09-07 2024-03-14
JPWO2024053485A1 (2) * 2022-09-07 2024-03-14

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203964A (ja) * 2000-12-28 2002-07-19 Hitachi Ltd 半導体装置及びその製造方法
CN103489913A (zh) * 2012-06-13 2014-01-01 株式会社东芝 半导体装置及其制造方法
CN105990426A (zh) * 2014-09-30 2016-10-05 株式会社东芝 半导体装置及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006202931A (ja) * 2005-01-20 2006-08-03 Renesas Technology Corp 半導体装置およびその製造方法
US20100264486A1 (en) * 2009-04-20 2010-10-21 Texas Instruments Incorporated Field plate trench mosfet transistor with graded dielectric liner thickness
US8608074B2 (en) * 2011-12-20 2013-12-17 Seiko Epson Corporation Method and apparatus for locating and decoding machine-readable symbols
JP2014187141A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 半導体装置
JP6231377B2 (ja) * 2013-12-25 2017-11-15 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203964A (ja) * 2000-12-28 2002-07-19 Hitachi Ltd 半導体装置及びその製造方法
CN103489913A (zh) * 2012-06-13 2014-01-01 株式会社东芝 半导体装置及其制造方法
CN105990426A (zh) * 2014-09-30 2016-10-05 株式会社东芝 半导体装置及其制造方法

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Publication number Publication date
JP2019054071A (ja) 2019-04-04
CN109509785A (zh) 2019-03-22
JP6862321B2 (ja) 2021-04-21
US20190081173A1 (en) 2019-03-14

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