CN111116357A - 形成用于euv光刻工艺的抗蚀剂底层膜的涂料组合物 - Google Patents

形成用于euv光刻工艺的抗蚀剂底层膜的涂料组合物 Download PDF

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Publication number
CN111116357A
CN111116357A CN201911034549.1A CN201911034549A CN111116357A CN 111116357 A CN111116357 A CN 111116357A CN 201911034549 A CN201911034549 A CN 201911034549A CN 111116357 A CN111116357 A CN 111116357A
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group
alkoxycarbonyl
polymer
alkanoyloxy
alkoxy
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CN201911034549.1A
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English (en)
Chinese (zh)
Inventor
沈载桓
S·金
朴琎洪
金明烈
Y-J·姜
林载峰
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DuPont Specialty Materials Korea Ltd
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Rohm and Haas Electronic Materials Korea Ltd
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Publication of CN111116357A publication Critical patent/CN111116357A/zh
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C59/00Compounds having carboxyl groups bound to acyclic carbon atoms and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups
    • C07C59/01Saturated compounds having only one carboxyl group and containing hydroxy or O-metal groups
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D251/00Heterocyclic compounds containing 1,3,5-triazine rings
    • C07D251/02Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings
    • C07D251/12Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members
    • C07D251/26Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members with only hetero atoms directly attached to ring carbon atoms
    • C07D251/30Only oxygen atoms
    • C07D251/32Cyanuric acid; Isocyanuric acid
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C31/00Saturated compounds having hydroxy or O-metal groups bound to acyclic carbon atoms
    • C07C31/18Polyhydroxylic acyclic alcohols
    • C07C31/20Dihydroxylic alcohols
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C31/00Saturated compounds having hydroxy or O-metal groups bound to acyclic carbon atoms
    • C07C31/18Polyhydroxylic acyclic alcohols
    • C07C31/20Dihydroxylic alcohols
    • C07C31/2051,3-Propanediol; 1,2-Propanediol
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C31/00Saturated compounds having hydroxy or O-metal groups bound to acyclic carbon atoms
    • C07C31/18Polyhydroxylic acyclic alcohols
    • C07C31/20Dihydroxylic alcohols
    • C07C31/2071,4-Butanediol; 1,3-Butanediol; 1,2-Butanediol; 2,3-Butanediol
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C31/00Saturated compounds having hydroxy or O-metal groups bound to acyclic carbon atoms
    • C07C31/18Polyhydroxylic acyclic alcohols
    • C07C31/22Trihydroxylic alcohols, e.g. glycerol
    • C07C31/225Glycerol
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C59/00Compounds having carboxyl groups bound to acyclic carbon atoms and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups
    • C07C59/235Saturated compounds containing more than one carboxyl group
    • C07C59/245Saturated compounds containing more than one carboxyl group containing hydroxy or O-metal groups
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C59/00Compounds having carboxyl groups bound to acyclic carbon atoms and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups
    • C07C59/235Saturated compounds containing more than one carboxyl group
    • C07C59/245Saturated compounds containing more than one carboxyl group containing hydroxy or O-metal groups
    • C07C59/285Polyhydroxy dicarboxylic acids having five or more carbon atoms, e.g. saccharic acids
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G10/00Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only
    • C08G10/02Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only of aldehydes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G14/00Condensation polymers of aldehydes or ketones with two or more other monomers covered by at least two of the groups C08G8/00 - C08G12/00
    • C08G14/02Condensation polymers of aldehydes or ketones with two or more other monomers covered by at least two of the groups C08G8/00 - C08G12/00 of aldehydes
    • C08G14/04Condensation polymers of aldehydes or ketones with two or more other monomers covered by at least two of the groups C08G8/00 - C08G12/00 of aldehydes with phenols
    • C08G14/06Condensation polymers of aldehydes or ketones with two or more other monomers covered by at least two of the groups C08G8/00 - C08G12/00 of aldehydes with phenols and monomers containing hydrogen attached to nitrogen
    • C08G14/10Melamines
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/68Polyesters containing atoms other than carbon, hydrogen and oxygen
    • C08G63/685Polyesters containing atoms other than carbon, hydrogen and oxygen containing nitrogen
    • C08G63/6852Polyesters containing atoms other than carbon, hydrogen and oxygen containing nitrogen derived from hydroxy carboxylic acids
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/68Polyesters containing atoms other than carbon, hydrogen and oxygen
    • C08G63/685Polyesters containing atoms other than carbon, hydrogen and oxygen containing nitrogen
    • C08G63/6854Polyesters containing atoms other than carbon, hydrogen and oxygen containing nitrogen derived from polycarboxylic acids and polyhydroxy compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G71/00Macromolecular compounds obtained by reactions forming a ureide or urethane link, otherwise, than from isocyanate radicals in the main chain of the macromolecule
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/28Chemically modified polycondensates
    • C08G8/32Chemically modified polycondensates by organic acids or derivatives thereof, e.g. fatty oils
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D167/00Coating compositions based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Coating compositions based on derivatives of such polymers
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    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/092Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means
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    • G03F7/26Processing photosensitive materials; Apparatus therefor
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    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/38Treatment before imagewise removal, e.g. prebaking

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Materials For Photolithography (AREA)
  • Polyesters Or Polycarbonates (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201911034549.1A 2018-10-31 2019-10-29 形成用于euv光刻工艺的抗蚀剂底层膜的涂料组合物 Pending CN111116357A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/176,245 US12228858B2 (en) 2018-10-31 2018-10-31 Coating composition for forming resist underlayer film for EUV lithography process
US16/176245 2018-10-31

Publications (1)

Publication Number Publication Date
CN111116357A true CN111116357A (zh) 2020-05-08

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CN201911034549.1A Pending CN111116357A (zh) 2018-10-31 2019-10-29 形成用于euv光刻工艺的抗蚀剂底层膜的涂料组合物

Country Status (5)

Country Link
US (1) US12228858B2 (2)
JP (2) JP2020076081A (2)
KR (2) KR20200049660A (2)
CN (1) CN111116357A (2)
TW (1) TWI821442B (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119200332A (zh) * 2024-09-29 2024-12-27 国科天骥(山东)新材料有限责任公司 一种用于电子束光刻工艺的层状结构及其光刻工艺

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12393118B2 (en) * 2021-05-28 2025-08-19 Dupont Electronic Materials International, Llc Composition for photoresist underlayer
TW202502879A (zh) 2023-02-27 2025-01-16 日商日產化學股份有限公司 阻劑下層膜形成用組成物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1704455A (zh) * 2004-05-18 2005-12-07 罗姆及海斯电子材料有限公司 与上涂光致抗蚀剂一起使用的涂料组合物
US20110230058A1 (en) * 2008-11-27 2011-09-22 Nissan Chemical Industries, Ltd. Composition for forming resist underlayer film with reduced outgassing
CN104094381A (zh) * 2012-02-09 2014-10-08 日产化学工业株式会社 形成膜的组合物及离子注入方法
CN105505146A (zh) * 2013-12-27 2016-04-20 罗门哈斯电子材料韩国有限公司 用于纳米光刻的有机底部抗反射涂料组合物

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5939236A (en) * 1997-02-07 1999-08-17 Shipley Company, L.L.C. Antireflective coating compositions comprising photoacid generators
TW591341B (en) 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
JP4206851B2 (ja) 2003-07-23 2009-01-14 Jsr株式会社 反射防止膜形成組成物及び反射防止膜の形成方法
JP4179116B2 (ja) 2003-09-11 2008-11-12 Jsr株式会社 反射防止膜形成組成物及び反射防止膜の製造方法
EP1691238A3 (en) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
TWI340296B (en) 2005-03-20 2011-04-11 Rohm & Haas Elect Mat Coating compositions for use with an overcoated photoresist
US20070298349A1 (en) 2006-06-22 2007-12-27 Ruzhi Zhang Antireflective Coating Compositions Comprising Siloxane Polymer
WO2009047151A1 (en) * 2007-10-10 2009-04-16 Basf Se Sulphonium salt initiators
TW201039057A (en) * 2009-03-12 2010-11-01 Sumitomo Chemical Co Method for producing resist pattern
US20120040291A1 (en) 2009-04-21 2012-02-16 Nissan Chemical Industries, Ltd. Composition for forming resist underlayer film for euv lithography
US9244352B2 (en) 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
JP5582316B2 (ja) 2009-08-10 2014-09-03 日産化学工業株式会社 ポリマー型の光酸発生剤を含有するレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
CN103221888B (zh) 2010-11-17 2016-06-29 日产化学工业株式会社 抗蚀剂下层膜形成用组合物和使用了该组合物的抗蚀剂图案的形成方法
JP2013203825A (ja) 2012-03-28 2013-10-07 Toyo Ink Sc Holdings Co Ltd カラーフィルタ用着色組成物
KR101866209B1 (ko) 2012-05-07 2018-06-11 닛산 가가쿠 고교 가부시키 가이샤 레지스트 하층막 형성조성물
KR102033748B1 (ko) 2013-07-23 2019-10-17 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물용 첨가제 및 이것을 포함하는 레지스트 하층막 형성 조성물
DE102015220537A1 (de) 2015-10-21 2016-10-27 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit mindestens einem Manipulator
CN107501858A (zh) 2017-10-10 2017-12-22 周荣 一种强韧性三聚氰胺泡沫材料的制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1704455A (zh) * 2004-05-18 2005-12-07 罗姆及海斯电子材料有限公司 与上涂光致抗蚀剂一起使用的涂料组合物
US20110230058A1 (en) * 2008-11-27 2011-09-22 Nissan Chemical Industries, Ltd. Composition for forming resist underlayer film with reduced outgassing
CN104094381A (zh) * 2012-02-09 2014-10-08 日产化学工业株式会社 形成膜的组合物及离子注入方法
CN105505146A (zh) * 2013-12-27 2016-04-20 罗门哈斯电子材料韩国有限公司 用于纳米光刻的有机底部抗反射涂料组合物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119200332A (zh) * 2024-09-29 2024-12-27 国科天骥(山东)新材料有限责任公司 一种用于电子束光刻工艺的层状结构及其光刻工艺

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