CN111663105A - Ultrahigh vacuum electron beam evaporator and electron beam coating device - Google Patents
Ultrahigh vacuum electron beam evaporator and electron beam coating device Download PDFInfo
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- 238000010894 electron beam technology Methods 0.000 title claims abstract description 53
- 238000000576 coating method Methods 0.000 title claims abstract description 15
- 239000011248 coating agent Substances 0.000 title claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 238000007789 sealing Methods 0.000 claims abstract description 38
- 230000007246 mechanism Effects 0.000 claims abstract description 34
- 238000001704 evaporation Methods 0.000 claims abstract description 33
- 230000008020 evaporation Effects 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000001816 cooling Methods 0.000 claims description 17
- 239000000919 ceramic Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 10
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000004021 metal welding Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
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- 239000011368 organic material Substances 0.000 description 1
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- 238000004886 process control Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
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Abstract
本发明公开了一种超高真空电子束蒸发器、电子束镀膜装置,其中,包括:超高真空金属密封法兰、设置在所述超高真空金属密封法兰第一侧的升降机构、设置在所述超高真空金属密封法兰第二侧的水冷屏蔽桶、位于所述水冷屏蔽桶内并依次排列的材料承载坩埚、电子发射器以及蒸发离子流检测器;所述升降机构通过高压聚焦电极杆与所述材料承载坩埚连接,并用于调整所述材料承载坩埚与所述电子发射器之间的间距;所述电子发射器与所述超高真空金属密封法兰连接,所述蒸发离子流检测器与所述水冷屏蔽桶连接。本申请通过采用水冷屏蔽桶,避免蒸镀过程中对其他部件造成干扰或影响,有利于蒸镀中对蒸发速率的控制。
The invention discloses an ultra-high vacuum electron beam evaporator and an electron beam coating device, comprising: an ultra-high vacuum metal sealing flange, a lifting mechanism arranged on the first side of the ultra-high vacuum metal sealing flange, a The water-cooled shielding barrel on the second side of the ultra-high vacuum metal sealing flange, the material carrying crucible, the electron emitter and the evaporative ion current detector located in the water-cooled shielding barrel and arranged in sequence; the lifting mechanism is focused by high pressure The electrode rod is connected with the material-bearing crucible, and is used to adjust the distance between the material-bearing crucible and the electron emitter; the electron emitter is connected with the ultra-high vacuum metal sealing flange, and the evaporated ion A flow detector is connected to the water-cooled shielded barrel. In the present application, by adopting a water-cooled shielding barrel, interference or influence on other components during the evaporation process is avoided, which is beneficial to the control of the evaporation rate in the evaporation process.
Description
技术领域technical field
本发明涉及镀膜设备技术领域,特别是涉及一种超高真空电子束蒸发器、电子束镀膜装置。The invention relates to the technical field of coating equipment, in particular to an ultra-high vacuum electron beam evaporator and an electron beam coating device.
背景技术Background technique
在各种物理沉积方式中热蒸发方式在薄膜的制备中广泛使用。同行众知,薄膜制备装备的极限真空度越高,本底越纯净,膜层缺陷越少,制备的薄膜质量越好。分子束外延(MBE)装备正是有其超高真空本底(极限真空度为2×10-8Pa;保持真空为2×10-7Pa),才能够制备出高质量的多晶膜,微晶膜以及单晶膜,因此分子束外延(MBE)装备受到科研人员及器件生产公司的青睐。Thermal evaporation is widely used in the preparation of thin films in various physical deposition methods. It is well known in the industry that the higher the ultimate vacuum degree of the thin film preparation equipment, the purer the background, the fewer the defects of the film layer, and the better the quality of the prepared thin film. Molecular beam epitaxy (MBE) equipment has its ultra-high vacuum background (the ultimate vacuum is 2 × 10 -8 Pa; the vacuum is maintained at 2 × 10 -7 Pa), so that high-quality polycrystalline films can be prepared. Microcrystalline film and single crystal film, so molecular beam epitaxy (MBE) equipment is favored by scientific researchers and device production companies.
在超高真空条件下,材料承载坩埚中被蒸发材料的温度较高,蒸发速率难以控制。Under ultra-high vacuum conditions, the temperature of the material to be evaporated in the material-carrying crucible is high, and the evaporation rate is difficult to control.
因此,现有技术还有待于改进和发展。Therefore, the existing technology still needs to be improved and developed.
发明内容SUMMARY OF THE INVENTION
鉴于上述现有技术的不足,本发明的目的在于提供一种超高真空电子束蒸发器、电子束镀膜装置,旨在解决超高真空条件下,蒸发速率难以控制的技术问题。In view of the above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide an ultra-high vacuum electron beam evaporator and an electron beam coating device, aiming at solving the technical problem that the evaporation rate is difficult to control under ultra-high vacuum conditions.
本发明的技术方案如下:The technical scheme of the present invention is as follows:
一种超高真空电子束蒸发器,其中,包括:超高真空金属密封法兰、设置在所述超高真空金属密封法兰第一侧的升降机构、设置在所述超高真空金属密封法兰第二侧的水冷屏蔽桶、位于所述水冷屏蔽桶内并依次排列的材料承载坩埚、电子发射器以及蒸发离子流检测器;所述升降机构通过高压聚焦电极杆与所述材料承载坩埚连接,并用于调整所述材料承载坩埚与所述电子发射器之间的间距;所述电子发射器与所述超高真空金属密封法兰连接,所述蒸发离子流检测器与所述水冷屏蔽桶连接。An ultra-high vacuum electron beam evaporator, comprising: an ultra-high vacuum metal sealing flange, a lifting mechanism arranged on the first side of the ultra-high vacuum metal sealing flange, and a lifting mechanism arranged on the ultra-high vacuum metal sealing method The water-cooled shielding barrel on the second side of the blue, the material-carrying crucible, the electron emitter and the evaporative ion current detector located in the water-cooled shielding barrel and arranged in sequence; the lifting mechanism is connected with the material-carrying crucible through a high-voltage focusing electrode rod , and is used to adjust the distance between the material-bearing crucible and the electron emitter; the electron emitter is connected with the ultra-high vacuum metal sealing flange, and the evaporative ion current detector is connected to the water-cooled shielding barrel connect.
所述的超高真空电子束蒸发器,其中,所述高压聚焦电极杆上设置有滑块,所述超高真空金属密封法兰上设置有与所述滑块配合的滑杆,所述滑块可沿所述滑杆滑动。The ultra-high vacuum electron beam evaporator, wherein the high-voltage focusing electrode rod is provided with a sliding block, the ultra-high vacuum metal sealing flange is provided with a sliding rod matched with the sliding block, and the sliding block is arranged on the sliding block. The block can slide along the slide bar.
所述的超高真空电子束蒸发器,其中,所述水冷屏蔽桶上设置有屏蔽罩,所述屏蔽罩形成蒸发通道。In the ultra-high vacuum electron beam evaporator, a shielding cover is provided on the water-cooled shielding barrel, and the shielding cover forms an evaporation channel.
所述的超高真空电子束蒸发器,其中,所述蒸发离子流检测器为离子收集板,所述水冷屏蔽桶和所述屏蔽罩均与所述离子收集板绝缘。In the ultra-high vacuum electron beam evaporator, the evaporation ion current detector is an ion collecting plate, and the water-cooling shielding barrel and the shielding cover are insulated from the ion collecting plate.
所述的超高真空电子束蒸发器,其中,所述超高真空电子束蒸发器还包括:设置在所述超高真空金属密封法兰第一侧的旋转机构、与所述旋转机构连接并用于打开或关闭所述蒸发通道电动挡板。The ultra-high vacuum electron beam evaporator, wherein the ultra-high vacuum electron beam evaporator further comprises: a rotating mechanism arranged on the first side of the ultra-high vacuum metal sealing flange, connected with the rotating mechanism and used To open or close the electric baffle of the evaporation channel.
所述的超高真空电子束蒸发器,其中,所述升降机构包括:设置在所述超高真空金属密封法兰第一侧的金属焊接波纹管、与所述金属焊接波纹管连接的移动块、与所述移动块螺纹连接的螺杆、与所述螺杆连接的驱动件;所述高压聚焦电极杆位于所述金属焊接波纹管内并与所述移动块连接。The ultra-high vacuum electron beam evaporator, wherein the lifting mechanism comprises: a metal welding bellows arranged on the first side of the ultra-high vacuum metal sealing flange, and a moving block connected with the metal welding bellows , a screw thread connected with the moving block, and a driving part connected with the screw; the high-voltage focusing electrode rod is located in the metal welded bellows and connected with the moving block.
所述的超高真空电子束蒸发器,其中,所述电子发射器为圆环形电子发射器。In the ultra-high vacuum electron beam evaporator, the electron emitter is a circular electron emitter.
所述的超高真空电子束蒸发器,其中,所述超高真空电子束蒸发器还包括:与所述电子发射器连接的陶封电极。In the ultra-high vacuum electron beam evaporator, the ultra-high vacuum electron beam evaporator further comprises: a ceramic sealing electrode connected with the electron emitter.
所述的超高真空电子束蒸发器,其中,所述水冷屏蔽桶采用全封闭式双层壁结构。In the ultra-high vacuum electron beam evaporator, the water-cooling shielding barrel adopts a fully enclosed double-wall structure.
一种电子束镀膜装置,其中,包括:如上述任意一项所述的超高真空电子束蒸发器。An electron beam coating device, comprising: the ultra-high vacuum electron beam evaporator according to any one of the above.
与现有技术相比,本发明实施例具有以下优点:Compared with the prior art, the embodiment of the present invention has the following advantages:
根据本发明实施方式提供的超高真空电子束蒸发器,以超高真空金属密封法兰为基础形成超高真空电子束蒸发器,通过超高真空金属密封法兰实现超高真空条件。且采用水冷屏蔽桶包围材料承载坩埚、电子发射器以及蒸发离子流检测器,避免蒸镀过程中对其他部件造成干扰或影响,有利于蒸镀中对蒸发速率的控制。According to the ultra-high vacuum electron beam evaporator provided by the embodiment of the present invention, the ultra-high vacuum electron beam evaporator is formed based on the ultra-high vacuum metal sealing flange, and the ultra-high vacuum condition is realized by the ultra-high vacuum metal sealing flange. In addition, a water-cooled shielding barrel is used to surround the material to carry the crucible, the electron emitter and the evaporation ion current detector, so as to avoid interference or influence on other components during the evaporation process, which is beneficial to the control of the evaporation rate in the evaporation process.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明中记载的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments described in the present invention. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without any creative effort.
图1为本发明实施例中一种超高真空电子束蒸发器的截面图;1 is a cross-sectional view of an ultra-high vacuum electron beam evaporator in an embodiment of the present invention;
图2为本发明实施例中一种超高真空电子束蒸发器的水冷屏蔽桶的局部放大图。FIG. 2 is a partial enlarged view of a water-cooled shielding barrel of an ultra-high vacuum electron beam evaporator in an embodiment of the present invention.
具体实施方式Detailed ways
为了使本技术领域的人员更好地理解本发明方案,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。In order to make those skilled in the art better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only These are some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
现有技术中磁控溅射技术已经应用非常广泛,然而随着技术的进步,磁控溅射要求设备可以达到的本底真空度越来越高,除超高真空制备系统外,需要对真空腔体及内部部件进行真空中温除气处理,真空室内忌用有机材料(因每次爆大气后都需要进行真空条件下高于200℃,不低于2小时的除气烘烤,造成密封圈放气以及密封圈失效,污染真空环境)。In the prior art, magnetron sputtering technology has been widely used. However, with the advancement of technology, magnetron sputtering requires equipment to achieve higher and higher background vacuum. The cavity and internal parts are degassed at high temperature in vacuum, and organic materials are not used in the vacuum chamber (because it is necessary to degas and bake under vacuum conditions higher than 200 °C for no less than 2 hours after each explosion, which will cause sealing rings. Outgassing and seal failure, polluting the vacuum environment).
参考如图1,本发明公开了一种超高真空电子束蒸发器,其中,包括:超高真空金属密封法兰、设置在所述超高真空金属密封法兰第一侧的升降机构1、设置在所述超高真空金属密封法兰第二侧的水冷屏蔽桶5、位于所述水冷屏蔽桶5内并依次排列的材料承载坩埚4、电子发射器9以及蒸发离子流检测器8;所述升降机构1通过高压聚焦电极杆2与所述材料承载坩埚4连接,并用于调整所述材料承载坩埚4与所述电子发射器9之间的间距;所述电子发射器9与所述超高真空金属密封法兰连接,所述蒸发离子流检测器8与所述水冷屏蔽桶5连接。Referring to FIG. 1, the present invention discloses an ultra-high vacuum electron beam evaporator, which includes: an ultra-high vacuum metal sealing flange, a lifting mechanism 1 arranged on the first side of the ultra-high vacuum metal sealing flange, The water-cooled shielding barrel 5 arranged on the second side of the ultra-high vacuum metal sealing flange, the material carrying crucible 4, the
本实施方式提供的超高真空电子束蒸发器,以超高真空金属密封法兰(CF100)为基础形成超高真空电子束蒸发器,升降机构1、水冷屏蔽桶5、材料承载坩埚4、电子发射器9以及蒸发离子流检测器8等部件均由金属制成,都组装在超高真空金属密封法兰上,金属的耐高温性能和耐高压性能好,而且不易变形,该超高真空电子束蒸发器的所有部件都使用金属材料,相互配合严密,有利于实现超高真空的密闭条件;而且采用水冷屏蔽桶5包围材料承载坩埚4、电子发射器9以及蒸发离子流检测器8,即将工作中的高温部分均包含在水冷屏蔽桶5内侧,避免蒸镀过程中产生的高温对其他部件造成干扰或影响,在蒸镀过程中,环绕在外侧的水冷屏蔽桶5产生稳定且均匀的降温作用,有利于蒸镀中对蒸发速率的控制;同时,所述超高真空电子束蒸发器的主体部分均安装于水冷屏蔽桶5内侧,防止镀膜时发光、发热等产生对外部环境的辐射,另外还便于维护工作中由于操作不当造成的损坏。此外,水冷屏蔽桶5还可以起到屏蔽作用,屏蔽电子发射器9所形成的的电场,防止该电场对其它部件造成影响。The ultra-high vacuum electron beam evaporator provided in this embodiment is based on the ultra-high vacuum metal sealing flange (CF100) to form an ultra-high vacuum electron beam evaporator, a lifting mechanism 1, a water-cooled shielding barrel 5, a material carrying crucible 4, an electronic The components such as the
具体地,高压聚焦电极杆2的中心轴线、材料承载坩埚4的中心轴线、电子发射器9的中心轴线、蒸发离子流检测器8的中心轴线以及水冷屏蔽桶5的中心轴线均重合,确保材料承载坩埚4中的材料可以得到充分蒸发。水冷屏蔽桶5两端具有开口,分为第一开口和第二开口,高压聚焦电极杆2穿过第一开口与材料承载坩埚4连接。蒸发离子流检测器8设置在第二开口处。蒸发离子流检测器8通过圆环形安装板与材料承载坩埚4连接,蒸发离子流检测器8位于圆环形安装板的孔中。Specifically, the central axis of the high-voltage focusing
进一步的,为了确保高压聚焦电极杆2和所述材料承载坩埚4能平稳移动,所述高压聚焦电极杆2上设置有滑块,所述超高真空金属密封法兰上设置有与所述滑块配合的滑杆3,所述滑块可沿所述滑杆3滑动。滑块起导向作用,通过滑块限制高压聚焦电极杆2和材料承载坩埚4上升和下降的方向,也就是说,高压聚焦电极杆2和材料承载坩埚4在移动的过程中,是沿材料承载坩埚4的中心轴线方向移动的,便于调节材料承载坩埚4与电子发射器9之间的间距,滑块与滑杆3配合,沿滑杆3上下滑动,对高压聚焦电极杆2和材料承载坩埚4的运动方向限位,使材料承载坩埚4始终处于电子发射器9的正下方,正对电子发射器9的中心,不会发生水平方向上的偏移,在高压电场的作用下电子向阳极高速运动,并集中轰击设置于高压聚焦电极杆2之上的材料承载坩埚4中的被蒸发材料,使之熔化蒸发,便于维持超高真空电子束蒸发器工作时高效、完整地镀膜。Further, in order to ensure that the high-voltage focusing
参阅如图2,所述水冷屏蔽桶5上设置有屏蔽罩7,所述屏蔽罩7形成蒸发通道。具体地,屏蔽罩7包括圆环部71以及围绕设置所述圆环部71中孔的边缘的圆筒部72。圆筒部72与第二开口相对,则形成蒸发通道。圆筒部72可以穿过第二开口并围绕所述蒸发离子流检测器8。圆筒部72的直径与材料承载坩埚4的直径一致。屏蔽罩7设置在水冷屏蔽桶5上,例如,屏蔽罩7通过圆环形安装板与水冷屏蔽桶5连接。在屏蔽罩7的作用下,材料在蒸发后可以顺利经蒸发通道蒸发出去而不受干扰。此外,超高真空电子束蒸发器工作时产生的热量通过屏蔽罩7迅速传导至水冷屏蔽桶5内,通过冷却水将热量带出超高真空电子束蒸发器,完成迅速降温过程,有利于散热,防止温度过高使设备损坏。Referring to FIG. 2 , the water-cooling shielding barrel 5 is provided with a
具体的,所述蒸发离子流检测器8为离子收集板,所述水冷屏蔽桶5和所述屏蔽罩7均与所述离子收集板绝缘。例如,在离子收集板与屏蔽罩7之间以及离子收集板与水冷屏蔽桶5之间设置都设置绝缘体,减少所述超高真空电子束蒸发器工作过程中漏电、辉光现象的产生,防止设备损坏;并且,材料承载坩埚4、电子发射器9以及离子收集板被水冷屏蔽桶5和屏蔽罩7包裹起来,既减少镀膜过程中产生的光电辐射对外产生影响,同时又可以防止工作时电子束蒸发器以外的辐射对镀膜过程产生影响,便于维护设备正常工作。Specifically, the evaporative ion current detector 8 is an ion collecting plate, and both the water-cooling shielding barrel 5 and the shielding
具体的,所述超高真空电子束蒸发器还包括:设置在所述超高真空金属密封法兰第一侧的旋转机构11、与所述旋转机构11连接并用于打开或关闭所述蒸发通道的电动挡板6。电动挡板6与蒸发通道相对,电动挡板6的尺寸大于蒸发通道的尺寸,旋转机构11采用磁耦合旋转驱动机构,电动挡板6由磁耦合旋转驱动机构驱动,通过电动控制打开或关闭,迅速便捷,方便操作,而且减少人体与设备的接触,比较安全。当电动挡板6打开时,电动挡板6没有遮住蒸发通道,因此,材料承载坩埚4中的材料蒸发后可经蒸发通道出去,并成膜。当电动挡板6关闭时,电动挡板6遮住蒸发通道,材料承载坩埚4中的材料蒸发后可经蒸发通道出去,并打在电动挡板6上。Specifically, the ultra-high vacuum electron beam evaporator further includes: a rotating
旋转机构11包括:设置在所述超高真空金属密封法兰第一侧的第二驱动件11a、与所述第二驱动件11a连接的驱动杆11b;驱动杆11b与电动挡板6连接,具体地,驱动杆11b穿过所述超高真空金属密封法兰与电动挡板6连接。第二驱动件11a采用磁耦合旋转驱动机构,磁耦合旋转驱动机构的转轴与驱动杆11b连接,在磁耦合旋转驱动机构的转轴转动时,驱动杆11b也随之转动,从而电动挡板6也转动,实现电动挡板6的打开和关闭。The
进一步的,所述升降机构1包括:设置在所述超高真空金属密封法兰第一侧的金属焊接波纹管1a、与所述金属焊接波纹管1a连接的移动块1b、与所述移动块1b螺纹连接的螺杆1c、与所述螺杆1c连接的第一驱动件1d;所述高压聚焦电极杆2位于所述金属焊接波纹管1a内并与所述移动块1b连接。所述金属焊接波纹管1a套设在所述高压聚焦电极杆2外。第一驱动件1d采用磁耦合旋转驱动机构,磁耦合旋转驱动机构的转轴与螺杆1c连接,在磁耦合旋转驱动机构的转轴转动时,磁耦合旋转驱动机构的转轴带动螺杆1c转动,并带动移动块1b移动,从而压缩或拉伸金属焊接波纹管1a。且在移动块1b的移动下可以带动高压聚焦电极杆2移动,从而实现材料承载坩埚4与电子发射器9之间的间距的调整。Further, the lifting mechanism 1 includes: a metal welded bellows 1a disposed on the first side of the ultra-high vacuum metal sealing flange, a moving block 1b connected to the metal welded bellows 1a, and the moving block 1b screw screw 1c connected with screw, first driving
具体地,所述升降机构1采用金属焊接波纹管1a密封。金属焊接波纹管1a是由两个中空膜片以同心圆的方式作内缘焊接组成膜片对,再将多个膜片对堆垒一起作外缘焊接组成波纹段,再将两端和端板金属焊接组合成波纹管组,如此便可应外部的需要与其他运动部件一起作往复运动;升降机构1带动高压聚焦电极杆2和材料承载坩埚4上下运动时金属焊接波纹管1a随着升降机构1上下运动,维持对升降机构1的保护,同时金属材料制成的金属焊接波纹管1a也可以适应超高真空电子束蒸发器内高温高压的工作环境,在实现往复运动的同时确保密封性。Specifically, the lifting mechanism 1 is sealed by a metal welded bellows 1a. The metal welded bellows 1a is composed of two hollow diaphragms welded on the inner edges in a concentric manner to form a diaphragm pair, and then a plurality of diaphragm pairs are stacked together to form a corrugated section by welding the outer edges, and then the two ends and the end are welded together to form a corrugated section. Sheet metal welding is combined into a bellows group, so that it can reciprocate together with other moving parts according to external needs; the lifting mechanism 1 drives the high-voltage focusing
具体的,所述电子发射器9为圆环形电子发射器。本申请使用钨丝弯曲成环形结构,作为电子发射器9,可均匀发射电子,使镀膜过程中膜层各处的厚度均匀,提高工艺控制性能;同时通过调整钨丝的电流可控制电子发生量的多少,进一步的可以调整蒸发量的大小,从而控制镀膜的膜层厚度等工艺参数。Specifically, the
具体的,所述超高真空电子束蒸发器还包括:与所述电子发射器9连接的陶封电极10。陶瓷金属封接电极,绝缘性能好,真空漏率小于2×10-10Pa.L/s,陶封电极10可减少漏电、辉光等现象的发生。当然,高压聚焦电极杆2外也采用陶封电极与电源连接。Specifically, the ultra-high vacuum electron beam evaporator further includes: a
具体的,所述水冷屏蔽桶5采用全封闭式双层壁结构。本申请的水冷系统采用整体钎焊方式封接,全封闭式水冷系统的散热效率高,耗水量小,节能环保,而且与外接隔绝,整体结构的气密性好,减少在高温高压下漏水的情况;并且水冷体为双层壁式,水冷回路均匀无死角,可以充分冷却高温部件。Specifically, the water-cooling shielding barrel 5 adopts a fully enclosed double-wall structure. The water cooling system of the present application is sealed by integral brazing. The fully enclosed water cooling system has high heat dissipation efficiency, low water consumption, energy saving and environmental protection, and is isolated from the external environment. The overall structure has good air tightness and reduces water leakage under high temperature and high pressure. Moreover, the water cooling body is a double-walled type, and the water cooling circuit is even and has no dead ends, which can fully cool the high temperature components.
进一步的,本申请的超高真空电子束蒸发器内部的电源引线均采用陶瓷管保护。利用陶瓷管耐高温、耐高压、低放气的优良性能保护电源引线,防止电源引线工作时损坏,减少设备故障。Further, the power leads inside the ultra-high vacuum electron beam evaporator of the present application are all protected by ceramic tubes. The excellent performance of ceramic tube with high temperature resistance, high pressure resistance and low outgassing is used to protect the power lead, prevent the power lead from being damaged during operation, and reduce equipment failures.
本申请还公开了一种电子束镀膜装置,其中,所述电子束镀膜装置包括如上任一所述的超高真空电子束蒸发器。The present application also discloses an electron beam coating device, wherein the electron beam coating device includes the ultra-high vacuum electron beam evaporator as described above.
本领域技术人员在考虑说明书及实践这里公开的发明后,将容易想到本发明的其它实施方案。本发明旨在涵盖本发明的任何变型、用途或者适应性变化,这些变型、用途或者适应性变化遵循本发明的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的,本发明的真正范围和精神由下面的权利要求指出。Other embodiments of the invention will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. The present invention is intended to cover any modifications, uses or adaptations of the present invention that follow the general principles of the invention and include common knowledge or common technical means in the art not disclosed by this disclosure . The specification and examples are to be regarded as exemplary only, with the true scope and spirit of the invention being indicated by the following claims.
以上所述仅为本发明的较佳实施例,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection of the present invention. within the range.
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Application publication date: 20200915 |
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| RJ01 | Rejection of invention patent application after publication |
