CN112736176B - Method for improving luminous efficiency of light-emitting diode - Google Patents
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- H10H20/80—Constructional details
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Abstract
Description
技术领域:Technical field:
本发明涉及发光二极管的制作领域，具体为一种通过增透型掺杂剂薄膜提高发光二极管发光效率的方法，适用于包含发光层和透明电极结构的各类电致发光二极管。The invention relates to the production field of light-emitting diodes, in particular to a method for improving the luminous efficiency of light-emitting diodes through an anti-reflection dopant film, which is applicable to various electroluminescent diodes including light-emitting layers and transparent electrode structures.
背景技术:Background technique:
发光二极管在显示和照明领域具有日益广泛的应用。透明电极是发光二极管的重要组成部分，对发光二极管的光外耦合和电荷注入均具有至关重要的影响，从而显著影响器件的发光效率。现有技术主要针对单一性能的改善，例如：采用微纳结构提高波导模式或基底模式的外耦合效率，采用化学掺杂剂提高透明电极的功函数与电导率从而促进电荷注入。然而，如何同时改善两方面的性能，实现发光效率的大幅提升仍是本领域亟待解决的难题。Light-emitting diodes have increasingly widespread applications in the fields of display and lighting. Transparent electrodes are an important part of light-emitting diodes, which have a crucial impact on the light outcoupling and charge injection of light-emitting diodes, thus significantly affecting the luminous efficiency of the device. Existing technologies are mainly aimed at the improvement of a single performance, such as: using micro-nano structures to improve the outcoupling efficiency of waveguide mode or substrate mode, and using chemical dopants to improve the work function and conductivity of transparent electrodes to promote charge injection. However, how to improve the performance of the two aspects at the same time and achieve a substantial increase in luminous efficiency is still a difficult problem to be solved in this field.
发明内容:Invention content:
本发明的目的在于提供一种提高发光二极管发光效率的方法，该方法在透明电极与发光层之间引入增透型掺杂剂薄膜，通过增透型掺杂剂薄膜同时改善透明电极的光外耦合效率和电荷注入效率，从而大幅提升发光二极管的发光效率。The object of the present invention is to provide a method for improving the luminous efficiency of a light-emitting diode. The method introduces an anti-reflection dopant film between the transparent electrode and the light-emitting layer, and simultaneously improves the light performance of the transparent electrode through the anti-reflection dopant film. Coupling efficiency and charge injection efficiency, thereby greatly improving the luminous efficiency of light-emitting diodes.
本发明的技术方案是：Technical scheme of the present invention is:
一种提高发光二极管发光效率的方法，在透明电极与发光层之间引入增透型掺杂剂薄膜，通过增透型掺杂剂薄膜同时改善透明电极的光外耦合效率和电荷注入效率，从而提升发光二极管的发光效率：在透明电极的表面形成增透型掺杂剂薄膜，利用薄膜的光学增透效应促进波导模式耦合进入透明电极，从而提高发光二极管的出光率；同时利用薄膜的表面电荷转移作用对透明电极进行掺杂以改善其功函数，从而提高电极的电荷注入效率。A method for improving the luminous efficiency of a light-emitting diode. An anti-reflection dopant film is introduced between a transparent electrode and a light-emitting layer, and the light outcoupling efficiency and charge injection efficiency of the transparent electrode are simultaneously improved through the anti-reflection dopant film, thereby Improve the luminous efficiency of light-emitting diodes: form an anti-reflection dopant film on the surface of the transparent electrode, use the optical anti-reflection effect of the film to promote the waveguide mode coupling into the transparent electrode, thereby improving the light extraction rate of the light-emitting diode; at the same time, use the surface charge of the film The transfer effect dopes the transparent electrode to improve its work function, thereby increasing the charge injection efficiency of the electrode.
所述的提高发光二极管发光效率的方法，掺杂剂为无机物、有机物或者两者的组合，包括但不局限于酸、氧化物、氯化物、碱金属的有机物、高分子聚合物之一种或两种以上。In the method for improving the luminous efficiency of light-emitting diodes, the dopant is an inorganic substance, an organic substance or a combination of the two, including but not limited to one of acid, oxide, chloride, alkali metal organic substance, and high molecular polymer or two or more.
所述的提高发光二极管发光效率的方法，增透型掺杂剂薄膜的折射率低于透明电极和透明基底的折射率，而且具有高的透光率，透光率范围为80～100％。In the method for improving the luminous efficiency of a light-emitting diode, the anti-reflection dopant film has a refractive index lower than that of the transparent electrode and the transparent substrate, and has high light transmittance, and the light transmittance ranges from 80 to 100%.
所述的提高发光二极管发光效率的方法，增透型掺杂剂在透明电极表面形成连续薄膜，其厚度范围为1～1000纳米。In the method for improving the luminous efficiency of a light-emitting diode, the anti-reflection dopant forms a continuous thin film on the surface of the transparent electrode, and its thickness ranges from 1 to 1000 nanometers.
所述的提高发光二极管发光效率的方法，增透型掺杂剂的掺杂原理为表面电荷转移，即将掺杂剂与透明电极的表面接触后，两者之间产生电荷转移，从而对透明电极材料进行掺杂；掺杂类型为p型或n型。In the method for improving the luminous efficiency of light-emitting diodes, the doping principle of the anti-reflection dopant is surface charge transfer, that is, after the dopant contacts the surface of the transparent electrode, charge transfer occurs between the two, so that the transparent electrode The material is doped; the doping type is p-type or n-type.
所述的提高发光二极管发光效率的方法，在透明电极表面形成增透型掺杂剂薄膜的方法包括物理气相沉积、化学气相沉积、溶液浸泡、提拉、旋涂、喷涂、刮涂、线棒涂布、印刷、辊压涂覆之一或两种以上的组合。The method for improving the luminous efficiency of a light-emitting diode, the method for forming an anti-reflection dopant film on the surface of the transparent electrode includes physical vapor deposition, chemical vapor deposition, solution immersion, pulling, spin coating, spray coating, scraping coating, wire bar Coating, printing, roll coating one or a combination of two or more.
所述的提高发光二极管发光效率的方法，透明电极材料为无机物或有机物，包括但不局限于石墨烯、碳纳米管或者导电聚合物。In the method for improving the luminous efficiency of light-emitting diodes, the transparent electrode material is inorganic or organic, including but not limited to graphene, carbon nanotubes or conductive polymers.
所述的提高发光二极管发光效率的方法，透明电极采用转移、沉积或涂覆的方法形成于透明基底表面，透明基底材料为刚性或柔性，包括但不局限于玻璃、石英或者柔性透明有机物。In the method for improving the luminous efficiency of a light-emitting diode, the transparent electrode is formed on the surface of the transparent substrate by means of transfer, deposition or coating, and the transparent substrate material is rigid or flexible, including but not limited to glass, quartz or flexible transparent organic matter.
本发明的设计思想是：Design idea of the present invention is:
本发明采用增透型掺杂剂薄膜，将掺杂剂的电学调制与增透膜的光学调制有机结合，实现对发光二极管发光过程的光电共调制，从而同时提高透明电极的电荷注入效率与光外耦合效率。The invention adopts the anti-reflection dopant film, organically combines the electrical modulation of the dopant and the optical modulation of the anti-reflection film, and realizes the photoelectric co-modulation of the light-emitting process of the light-emitting diode, thereby simultaneously improving the charge injection efficiency of the transparent electrode and the optical modulation. outcoupling efficiency.
本发明的特点及有益效果是：Features and beneficial effects of the present invention are:
1.本发明突破了现有方法仅改善单一性能的局限，实现了透明电极的波导模式外耦合效率和电荷注入效率的同步提高，从而大幅提升发光二极管的发光效率。1. The present invention breaks through the limitations of existing methods that only improve a single performance, and realizes the synchronous improvement of the waveguide mode outcoupling efficiency and charge injection efficiency of the transparent electrode, thereby greatly improving the luminous efficiency of the light-emitting diode.
2.本发明所述方法无需使用复杂的微纳结构，工艺简单而且与发光二极管的制作工艺兼容性高。2. The method of the present invention does not need to use complex micro-nano structures, the process is simple and has high compatibility with the manufacturing process of light-emitting diodes.
附图说明:Description of the drawings:
图1为实施例1中发光二极管为底发光结构示意图。图中，101聚对苯二甲酸乙二醇酯(PET)透明基底，102单层石墨烯，103增透型掺杂剂薄膜，104发光层，105铝薄膜。FIG. 1 is a schematic diagram of a bottom-emitting light-emitting diode in Embodiment 1. In the figure, 101 polyethylene terephthalate (PET) transparent substrate, 102 single-layer graphene, 103 anti-reflection dopant film, 104 light-emitting layer, 105 aluminum film.
图2为实施例2中发光二极管为顶发光结构示意图。图中，201玻璃透明基底，202铝薄膜，203发光层，204四五氟苯基硼酸薄膜，205碳纳米管薄膜。FIG. 2 is a schematic diagram of a top-emitting light-emitting diode in Example 2. FIG. In the figure, 201 is a glass transparent substrate, 202 is an aluminum film, 203 is a light-emitting layer, 204 is a tetrapentafluorophenyl boric acid film, and 205 is a carbon nanotube film.
具体实施方式:detailed description:
下面，通过实施例对本发明进一步详细阐述。Below, the present invention is described in further detail through examples.
实施例1Example 1
如图1所示，本实施例中，发光二极管为底发光结构，阳极采用聚对苯二甲酸乙二醇酯(PET)透明基底101表面的单层石墨烯102作为透明电极。在阳极与发光层104之间使用增透型掺杂剂薄膜103(其厚度为10纳米)，该薄膜的成分是四五氟苯基硼酸或其它透光率为80～100％具有增透作用的p型掺杂剂，阴极采用铝薄膜105(其厚度为100纳米)，铝薄膜105位于发光层104之上。依次在单层石墨烯阳极表面形成增透型掺杂剂薄膜、发光层和铝薄膜阴极。四五氟苯基硼酸薄膜同时提高发光层在阳极一侧的出光率和阳极向发光层的空穴注入效率，该发光二极管的外量子效率为29％。As shown in FIG. 1 , in this embodiment, the light-emitting diode has a bottom-emitting structure, and the anode uses a single-
实施例2Example 2
与实施例1不同之处在于：The difference from Example 1 is:
如图2所示，本实施例中，发光二极管为顶发光结构，采用玻璃透明基底201表面的铝薄膜202(其厚度为150纳米)作为底部的透明阴极，采用碳纳米管薄膜205(其厚度为10纳米)作为顶部的透明阳极。依次在铝薄膜阴极表面形成发光层203、四五氟苯基硼酸薄膜204和碳纳米管薄膜透明阳极，该发光二极管的外量子效率为20％。As shown in Figure 2, in the present embodiment, the light-emitting diode is a top-emitting structure, adopts the aluminum film 202 (its thickness is 150 nanometers) on the surface of glass
实施例3Example 3
与实施例1不同之处在于：The difference from Example 1 is:
本实施例中，发光二极管为全透明结构，阳极采用聚对苯二甲酸乙二醇酯(PET)透明基底表面的单层石墨烯作为透明电极，阴极采用碳纳米管薄膜(其厚度为8纳米)。依次在单层石墨烯阳极表面形成四五氟苯基硼酸薄膜、发光层和碳纳米管薄膜阴极，该发光二极管的外量子效率达到30％。In this embodiment, the light-emitting diode is a fully transparent structure, and the anode adopts a single-layer graphene on the surface of a polyethylene terephthalate (PET) transparent substrate as a transparent electrode, and the cathode adopts a carbon nanotube film (its thickness is 8 nanometers). ). A tetrapentafluorophenylboronic acid film, a light-emitting layer and a carbon nanotube film cathode are sequentially formed on the surface of the single-layer graphene anode, and the external quantum efficiency of the light-emitting diode reaches 30%.
实施例结果表明，本发明方法在透明电极与发光层之间引入增透型掺杂剂薄膜，通过增透型掺杂剂薄膜同时改善透明电极的光外耦合效率和电荷注入效率，从而提升发光二极管的发光效率。该方法无需使用复杂的微纳结构，与发光二极管的制作工艺兼容性高，为发展高性能发光二极管提供了简单有效的技术途径。The results of the examples show that the method of the present invention introduces an anti-reflection dopant film between the transparent electrode and the light-emitting layer, and simultaneously improves the light outcoupling efficiency and charge injection efficiency of the transparent electrode through the anti-reflection dopant film, thereby improving the light emission The luminous efficiency of a diode. The method does not need to use complex micro-nano structures, has high compatibility with the manufacturing process of light-emitting diodes, and provides a simple and effective technical approach for the development of high-performance light-emitting diodes.
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| CN1581518A (en) * | 2003-08-01 | 2005-02-16 | 厦门三安电子有限公司 | Surface anti-reflection light-emitting diode |
| CN105449059A (en) * | 2015-11-24 | 2016-03-30 | 山东浪潮华光光电子股份有限公司 | GaN-based LED chip with current-expanding antireflection film layers, and preparation method for GaN-based LED chip |
| CN109216521A (en) * | 2018-10-30 | 2019-01-15 | 扬州乾照光电有限公司 | A kind of preparation method and LED chip of LED chip |
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