CN1129356A - 具有增强的聚焦裕度的半导体集成电路器件制造方法 - Google Patents

具有增强的聚焦裕度的半导体集成电路器件制造方法 Download PDF

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Publication number
CN1129356A
CN1129356A CN95115539A CN95115539A CN1129356A CN 1129356 A CN1129356 A CN 1129356A CN 95115539 A CN95115539 A CN 95115539A CN 95115539 A CN95115539 A CN 95115539A CN 1129356 A CN1129356 A CN 1129356A
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CN
China
Prior art keywords
isolation film
mentioned
semiconductor
film
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN95115539A
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English (en)
Chinese (zh)
Inventor
大鸟浩
梶谷一彦
宫沢一幸
久保征治
小池淳义
金井史幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN1129356A publication Critical patent/CN1129356A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN95115539A 1994-08-10 1995-08-10 具有增强的聚焦裕度的半导体集成电路器件制造方法 Pending CN1129356A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP188040/94 1994-08-10
JP6188040A JPH0855968A (ja) 1994-08-10 1994-08-10 半導体集積回路装置の製造方法

Publications (1)

Publication Number Publication Date
CN1129356A true CN1129356A (zh) 1996-08-21

Family

ID=16216628

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95115539A Pending CN1129356A (zh) 1994-08-10 1995-08-10 具有增强的聚焦裕度的半导体集成电路器件制造方法

Country Status (5)

Country Link
US (1) US5670409A (2)
JP (1) JPH0855968A (2)
KR (1) KR960009039A (2)
CN (1) CN1129356A (2)
TW (1) TW277160B (2)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1032316A (ja) * 1996-07-16 1998-02-03 Nec Corp 半導体記憶装置及びその製造方法
JP3941133B2 (ja) 1996-07-18 2007-07-04 富士通株式会社 半導体装置およびその製造方法
JP3164026B2 (ja) * 1996-08-21 2001-05-08 日本電気株式会社 半導体装置及びその製造方法
TW377495B (en) * 1996-10-04 1999-12-21 Hitachi Ltd Method of manufacturing semiconductor memory cells and the same apparatus
WO1998028789A1 (en) * 1996-12-20 1998-07-02 Hitachi, Ltd. Semiconductor storage device and method for manufacturing the same
KR100310470B1 (ko) * 1997-12-30 2002-05-09 박종섭 양면반도체메모리소자및그제조방법
JP3147095B2 (ja) * 1998-07-24 2001-03-19 日本電気株式会社 半導体記憶装置
KR100270963B1 (ko) * 1998-09-22 2000-11-01 윤종용 머지드 디램 앤 로직 및 그 제조방법
TW429579B (en) * 1999-08-23 2001-04-11 Taiwan Semiconductor Mfg Manufacturing method of inter-layer dielectric
WO2006075444A1 (ja) * 2005-01-12 2006-07-20 Sharp Kabushiki Kaisha 半導体装置の製造方法、及び半導体装置
JP4602818B2 (ja) * 2005-03-30 2010-12-22 富士通セミコンダクター株式会社 半導体装置の製造方法
US8853083B2 (en) * 2013-01-23 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical mechanical polish in the growth of semiconductor regions

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247197A (en) * 1987-11-05 1993-09-21 Fujitsu Limited Dynamic random access memory device having improved contact hole structures
US5235199A (en) * 1988-03-25 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor memory with pad electrode and bit line under stacked capacitor
JP2640174B2 (ja) * 1990-10-30 1997-08-13 三菱電機株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
KR960009039A (ko) 1996-03-22
TW277160B (2) 1996-06-01
JPH0855968A (ja) 1996-02-27
US5670409A (en) 1997-09-23

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