Low-Q-value bending disc transducer and manufacturing method thereof
Technical Field
The invention belongs to the field of underwater acoustic transducers, and mainly relates to a low-Q-value curved disk transducer and a manufacturing method thereof.
Background
The investment of the country on ocean development and ocean protection is rapidly increased at the beginning of the 21 st century, so that various industries start to develop focused underwater sound products. In addition, it is also seen from various media reports that the number of national defense equipment of China navy is increased in geometric grade after 2000. In 2010, the development of domestic unmanned boats, unmanned ships, unmanned underwater vehicles and the like also enters the peak period. The transmitting transducer is a most basic component of all underwater sound related products, and with the development of marine equipment, the requirements on deep-water, low-frequency, small-size, broadband and high-power transmitting transducers are urgent, but for the transmitting transducers, technical indexes of deep-water, low-frequency, small-size, broadband, high-power operation and the like are mutually contradictory, so that an optimal balance point needs to be found in each technical index according to different working platforms.
In various underwater acoustic tests of naval equipment verification tests, marine survey tests and small unmanned platforms, a sound source transmitting transducer which is convenient to carry, low in resonant frequency, wide in working frequency band and within hundreds of meters in working water depth is needed, the transmitting transducer is most suitable for bending, and if the transmitting transducer is required to be small in size and light in weight, a bending disk transducer is more suitable. However, the Q value of the conventional bending disk transducer is very high, generally about 12, for example, when the transducer works at very low frequency, the bandwidth may only be a few hz, and when the transducer is used, the transient state is long, and only continuous wave transmission can be adopted, so that the transducer has no obvious advantages compared with an electrodynamic transducer. In order to reduce the transient wave number of the curved disk transducer and enable the curved disk transducer to emit better pulse waveforms at low frequency, a curved disk transducer with a low Q value needs to be developed.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a low-Q-value bending disk transducer and a manufacturing method thereof, which can be applied to an air-drop active launching buoy as a launching array element; the method can also be applied to autonomous aircrafts as a transmitting unit of a target sound source simulator, or applied to unmanned platform sonar transmitting arrays such as submerged beacons and buoys.
The object of the present invention is achieved by the following technical means. A low Q value bending disk transducer is composed of composite piezoelectric ceramics, a metal bottom plate, an electrode plate and watertight rubber, wherein the composite piezoelectric ceramics are formed by filling organic materials into a plurality of gaps after a piezoelectric thin disk is cut; the electrode plate A, the composite piezoelectric ceramic, the electrode plate B and the metal bottom plate are sequentially connected from top to bottom to form a transmitting assembly, the two transmitting assemblies are symmetrically combined from top to bottom to form a transmitting vibrator, and the transmitting vibrator is subjected to watertight packaging through watertight rubber to form the low-Q-value bending disc transducer.
The piezoelectric ceramic is cut and then filled with organic materials, the composite piezoelectric ceramic is applied to an underwater acoustic transducer after being formed, a similar design method is adopted, but the design concept is to avoid the transverse mode of the ceramic as much as possible and ensure the pureness of the longitudinal vibration mode, the composite piezoelectric ceramic is generally applied to a high-frequency transducer, and the resonance frequency of the composite piezoelectric ceramic is in the order of hundred hertz. The bending disk transducer needs to realize bending vibration by utilizing the transverse mode of the piezoelectric ceramic, and the bending vibration is realized by utilizing the transverse mode of the composite piezoelectric ceramic, so that the piezoelectric thin wafer in the invention can not be completely cut through, and the filled epoxy nonmetallic material mainly plays a role in reducing the rigidity of the piezoelectric thin wafer and increasing vibration damping, thereby achieving the purpose of reducing the resonance frequency and the Q value, and being completely different from the application principle of the traditional piezoelectric composite material.
In the technical scheme, the gaps are not completely cut through, so that the piezoelectric thin wafer still has an integral structure, and the distance between the gaps is far greater than the width of the gaps and is generally not less than 5 times.
In the above technical scheme, the organic material is epoxy resin or other composite materials using epoxy resin as a base material.
In the technical scheme, the composite piezoelectric ceramic is formed by filling epoxy resin after a P4 piezoelectric thin wafer is cut, and the piezoelectric thin wafer is also made of P5 or P8 piezoelectric materials.
In the above technical scheme, the metal bottom plate is made of a titanium alloy material, and can also be made of aluminum alloy or steel.
In the technical scheme, the electrode plate is made of beryllium bronze, the thickness of the electrode plate is generally 0.2mm, and an electrode ear is generally reserved on the electrode plate for facilitating wire welding.
In the above technical scheme, the watertight rubber is neoprene or polyurethane rubber.
In the above technical scheme, when the two transmitting assemblies are combined symmetrically up and down, the two transmitting assemblies can be bonded, and can also adopt interference fit or welding and other modes.
The invention provides a manufacturing method of a low Q value bending disk transducer, which comprises the following steps:
(1) deoiling piezoelectric ceramic: soaking the piezoelectric thin wafer in an organic solvent to remove oil, taking out the piezoelectric thin wafer, washing the piezoelectric thin wafer with clear water, wiping the piezoelectric thin wafer dry, putting the piezoelectric thin wafer into a drying oven at 50-60 ℃ for 2 hours, and naturally cooling the piezoelectric thin wafer to room temperature for later use;
(2) cleaning a structural part: cleaning and wiping the metal bottom plate and the electrode slice, putting the metal bottom plate and the electrode slice into a drying oven at 50-60 ℃ for 2 hours, and naturally cooling to room temperature for later use;
(3) cutting the piezoelectric ceramics: cutting a plurality of incomplete cutting gaps on the piezoelectric thin wafer subjected to deoiling treatment by using a cutting machine;
(4) manufacturing the composite piezoelectric ceramic: putting the cut piezoelectric thin wafer into a special die, pouring epoxy resin, vacuumizing for 2 minutes by using an air compressor, and then putting the piezoelectric thin wafer into a drying oven at the temperature of 60-80 ℃ for curing;
(5) assembling a transmitting assembly: bonding the electrode plate A, the composite piezoelectric ceramic, the electrode plate B and the metal bottom plate in sequence from top to bottom, and finally applying force for curing;
(6) assembling the transmitting vibrator: the end faces of the two assembled metal bottom plates of the emission assemblies are opposite, concentricity is guaranteed through a positioning tool, welding is carried out, after welding, positive and negative leads are welded on electrode plates, and the electrode plates in contact with the metal bottom plates are welded with negative leads;
(7) pouring: and (3) placing the assembled transmitting vibrator into a pouring mold, pouring polyurethane rubber into the pouring mold through a mold glue injection hole, and placing the filled transmitting vibrator into a drying oven at 60-70 ℃ for curing.
Compared with the prior art, the low-Q-value bending disk transducer has the advantages that the underwater conductance Q value is only about 7, the transducer has lower resonant frequency and lighter weight under the conditions of the same outer diameter size and the same working water depth, and the transient wave number is less under the pulse emission condition.
Drawings
FIG. 1 is a schematic diagram of a low Q curved disk transducer in accordance with an embodiment of the present invention;
FIG. 2 is a schematic view of a composite piezoelectric ceramic according to an embodiment of the present invention;
FIG. 3 is a schematic view of an electrode sheet according to an embodiment of the invention;
FIG. 4 is a schematic view of a launch assembly in accordance with an embodiment of the present invention;
FIG. 5 is a schematic diagram of a transmitting element in accordance with one embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of a transmitting transducer according to an embodiment of the present invention;
FIG. 7 shows admittance test results of an embodiment of the invention.
Description of reference numerals: the piezoelectric ceramic composite material comprises composite piezoelectric ceramic 1, gaps 1-1, a metal base plate 2, an electrode plate A3, watertight rubber 4 and an electrode plate B5.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
As shown in fig. 1 to 6, the low-Q-value bending disk transducer provided by the invention comprises a composite piezoelectric ceramic 1, a metal base plate 2, an electrode plate and watertight rubber 4, wherein the composite piezoelectric ceramic 1 is formed by filling organic materials into a plurality of gaps 1-1 after a piezoelectric thin wafer is cut; the electrode slice A3, the composite piezoelectric ceramic 1, the electrode slice B5 and the metal bottom plate 2 are sequentially connected from top to bottom to form a transmitting assembly, the two transmitting assemblies are symmetrically combined up and down to form a transmitting vibrator, and the transmitting vibrator is subjected to watertight packaging through watertight rubber 4 to form the low-Q-value bending disc transducer. According to the invention, the damping coefficient of the piezoelectric ceramic is increased by cutting the piezoelectric ceramic filled with the organic material, so that the purpose of improving the impedance Q value of the bending disk transducer is achieved.
Preferably, the composite piezoelectric ceramic is formed by cutting a P4 piezoelectric thin wafer and filling epoxy resin, wherein the diameter of the piezoelectric wafer is 80mm, the thickness of the piezoelectric wafer is 2.5mm, the cutting width of the piezoelectric wafer is 3mm, and the cutting gap is 0.5 mm.
Preferably, the metal bottom plate is Tc4 titanium alloy, the diameter is 100mm, and the thickness is 2.5 mm.
Preferably, the electrode plate is made of beryllium bronze, the thickness of the electrode plate is 0.2mm, welding is convenient, and electrode ears with the diameter of 5mm are reserved on the electrode plate.
Preferably, the watertight rubber is urethane rubber.
Specifically, the prepared components are executed according to the following operations:
(1) deoiling piezoelectric ceramic: soaking the P4 piezoelectric thin wafer in an organic solvent to remove oil, taking out the piezoelectric thin wafer, washing the piezoelectric thin wafer with clear water, wiping the piezoelectric thin wafer dry, putting the piezoelectric thin wafer into a drying oven at 50-60 ℃ for about 2 hours, and naturally cooling the piezoelectric thin wafer to room temperature for later use.
(2) Cleaning a structural part: cleaning and wiping the metal bottom plate 2 and the electrode plates, putting the metal bottom plate and the electrode plates into a drying oven at 50-60 ℃ for about 2 hours, and naturally cooling to room temperature for later use.
(3) Cutting the piezoelectric ceramics: the P4 piezoelectric thin wafer after oil removal treatment is cut by a cutting machine with a blade thickness of 0.5mm, the stepping distance is 3.5mm, and the cutting depth is 2 mm.
(4) Manufacturing the composite piezoelectric ceramic: and (3) putting the cut P4 piezoelectric thin wafer into a special die, pouring epoxy resin, vacuumizing for 2 minutes by using an air compressor, and then putting the wafer into a drying oven at the temperature of 60-80 ℃ for curing.
(5) Assembling a transmitting assembly: the electrode plate A, the composite piezoelectric ceramic, the electrode plate B and the metal bottom plate are sequentially bonded from top to bottom, a special positioning tool is needed during bonding, the concentricity of all devices is guaranteed, and finally, force is applied for curing, wherein the force application value is 100-200 kg.
(6) Assembling the transmitting vibrator: and welding positive and negative leads on the electrode plates after welding, wherein the electrode plate in contact with the metal bottom plate is welded with the negative lead.
(7) Pouring: and (3) placing the assembled transmitting vibrator into a pouring mold, pouring polyurethane rubber into the pouring mold through a mold glue injection hole, and after the pouring mold is filled with the polyurethane rubber, placing the polyurethane rubber into a drying oven at 60-70 ℃ for curing for about 24 hours.
(8) And (3) testing: a sample was produced according to the design method and tested, and as a result, the resonant frequency was 2.60kHz and the conductance Q value was 7.
Under the condition of the same device material and structure size, the composite piezoelectric ceramic is only changed into a P4 piezoelectric thin wafer, the resonant frequency is 3.15kHz, and the conductance Q value is 12. The beneficial effects of the invention are more obvious.
The embodiments are described in a progressive manner in the specification, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the system disclosed by the embodiment, the description is relatively simple because the system corresponds to the method disclosed by the embodiment, and the relevant points can be referred to the method part for description.
It will be apparent to those skilled in the art that various changes and modifications may be made in the invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.