CN113772617A - Three-dimensional interconnection and heat dissipation integrated microsystem package structure - Google Patents
Three-dimensional interconnection and heat dissipation integrated microsystem package structure Download PDFInfo
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- CN113772617A CN113772617A CN202111061951.6A CN202111061951A CN113772617A CN 113772617 A CN113772617 A CN 113772617A CN 202111061951 A CN202111061951 A CN 202111061951A CN 113772617 A CN113772617 A CN 113772617A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
- B81B7/0019—Protection against thermal alteration or destruction
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems ; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/07—Interconnects
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Abstract
本发明提供了一种三维互联和散热一体化的微系统封装结构，包括散热壳体、硅基组件、转接电路板、封装盖板和毛纽扣连接器；散热壳体与封装盖板连接形成一封闭腔体，用于容置彼此连接的硅基组件和转接电路板，硅基组件与散热壳体相连，转接电路板与封装盖板相连；毛纽扣连接器包括第一类和第二类；第一类贯穿散热壳体底壁与硅基组件相连，散热壳体内嵌有用于流通冷却液的流道；第二类贯穿封装盖板与转接电路板相连；硅基组件通过金属层、铜通孔、硅通孔和BGA焊球阵列封装实现毛纽扣连接器、转接电路板和硅基组件三者之间电学互联，毛纽扣连接器用于硅基组件与外界进行信号传输。该结构能够同时兼具高集成度、高导热效率、高实用性和高使用寿命。
The invention provides a micro-system package structure integrating three-dimensional interconnection and heat dissipation, comprising a heat dissipation shell, a silicon base component, a transfer circuit board, a package cover plate and a button connector; the heat dissipation shell and the package cover plate are connected to form a closed cavity for accommodating the silicon-based components and the transfer circuit boards connected to each other, the silicon-based components are connected with the heat dissipation shell, and the transfer circuit board is connected with the package cover; the hair button connectors include the first type and the second type Type II; the first type penetrates the bottom wall of the heat dissipation shell and is connected to the silicon-based component, and the heat dissipation shell is embedded with a flow channel for circulating cooling liquid; the second type penetrates through the package cover and is connected to the switching circuit board; the silicon-based component passes through Metal layer, through-copper vias, through-silicon vias and BGA solder ball array packages realize electrical interconnection between the hair button connector, the switching circuit board and the silicon-based components. The hair-button connector is used for signal transmission between the silicon-based components and the outside world. . The structure can combine high integration, high thermal conductivity, high practicability and long service life at the same time.
Description
Technical Field
The invention relates to the technical field of three-dimensional interconnection and heat dissipation of microsystems, in particular to a three-dimensional interconnection and heat dissipation integrated microsystem packaging structure.
Background
At present, the integration, high integration and microminiaturization of the electronic system of the weapon equipment are important development trends. In the radio frequency front end, a multi-chip module (MCM) is integrally manufactured by using a microwave multi-layer board, or a radio frequency microsystem is realized by using a hybrid integration means based on a traditional thick and thin film process, represented by LTCC (Low Temperature Co-fired Ceramic), and a radio frequency microsystem realized by using technologies such as High Temperature Co-fired Ceramic (HTCC) and multilayer High-precision BT-type PCBs, and the like, is gradually becoming the mainstream of the application.
In recent years, due to the development of microelectronic technology and with the development of bulk silicon micromachining technology, a wafer level assembly (WSA) is adopted to form an ultra-compact and ultra-miniature active sub-array, passive on-chip Integration (IPD), on-chip high-density copper interconnection multilayer wiring, TSV and wafer bonding are realized under the wafer technology, and a radio frequency microsystem is a new choice for developing a new technology based on a silicon-based MEMS (Micro-Electro-Mechanical System).
For the design of a radio frequency micro system, the problem of heat dissipation is always the key point of research, and particularly in the field of missile-borne phased array radars, the development of high power of the radio frequency micro system is severely restricted by a heat accumulation effect, so that the detection distance of the radars is influenced. The three-dimensional integrated power density of the microsystem is obviously increased, various chips, elements, interconnection, power supply systems and the like in the microsystem are closely arranged, the thermal problem is serious, and the thermal problem and the electromagnetic problem are mutually coupled and mutually influenced, so that the three-dimensional integrated power density becomes a key factor for restricting the working performance of a high-density integrated system.
In the design of radio frequency microsystems, the following heat dissipation technologies exist at present, but the following technologies all have various problems:
1) the heat pipe has various forms including folding, circulating and vibrating, but the integration level is not high.
2) Spray heat dissipation, directly to heat source spraying heat dissipation, need the low pressure, the practicality is not high.
3) Thermoelectric cooling, which utilizes the thermoelectric effect for cooling, but has low heat conduction efficiency.
4) The micro-channel adopts gas or liquid for heat conduction, has high efficiency, but needs to be synchronously completed with a device or substrate preparation process, has higher specificity and limited engineering usability.
Therefore, it is necessary to provide a design of a radio frequency microsystem, which can combine high integration, high heat conduction efficiency, high practicability and long service life.
Disclosure of Invention
The invention provides a three-dimensional interconnection and heat dissipation integrated microsystem packaging structure which can simultaneously have high integration level, high heat conduction efficiency, high practicability and long service life.
In order to achieve the above and other related objects, the present invention provides a three-dimensional interconnection and heat dissipation integrated microsystem packaging structure, which comprises a heat dissipation housing, a silicon-based component, a switching circuit board, a packaging cover plate and a fuzz button connector;
the heat dissipation shell is connected with the packaging cover plate to form a closed cavity, and the closed cavity is used for accommodating the silicon-based component and the switching circuit board which are connected with each other, wherein the silicon-based component is connected with the heat dissipation shell, and the switching circuit board is connected with the packaging cover plate;
the fuzz button connector comprises a first fuzz button connector and a second fuzz button connector;
the first type of hair button connector penetrates through the bottom wall of the heat dissipation shell to be connected with the silicon-based component, and a flow channel is embedded in the heat dissipation shell and used for circulating cooling liquid;
the second fuzz button connector penetrates through the packaging cover plate and is connected with the switching circuit board;
the silicon-based component realizes the electrical interconnection among the fuzz button connector, the switching circuit board and the silicon-based component through the metal layer, the copper through hole, the silicon through hole and the BGA solder ball array package, and the fuzz button connector is used for signal transmission between the silicon-based component and the outside.
Preferably, the first fuzz button connector comprises a first fuzz button radio-frequency coaxial electric connector, the second fuzz button connector comprises a second fuzz button radio-frequency coaxial electric connector and a fuzz button multi-core low-frequency connector, the first fuzz button radio-frequency coaxial electric connector and the second fuzz button radio-frequency coaxial electric connector are used for external radio-frequency microwave signal transmission, and the fuzz button multi-core low-frequency connector is used for external low-frequency control signal and electric signal transmission.
Preferably, the silicon-based component comprises an antenna surface and an excitation surface which are opposite, a radio frequency transceiving opening is formed in the antenna surface and used for being connected with the first fuzz button radio frequency coaxial electric connector, and the excitation surface is connected with the adapter circuit board through a BGA packaging technology.
Preferably, the first hair button radio frequency coaxial electrical connector comprises a first SMP radio frequency connector and a first hair button end which are connected with each other and located at two ends respectively, and an internal filling medium, the first SMP radio frequency connector is an external radio frequency microwave signal interface, and the first hair button end is in elastic contact with the radio frequency transceiver.
Preferably, the second ground button radio-frequency coaxial electrical connector comprises a second SMP radio-frequency connector and a second ground button end which are connected to each other and located at two ends respectively, and an internal filling medium, two ends of the ground button multi-core low-frequency connector are a low-frequency J30J end and a third ground button end respectively, the second SMP radio-frequency connector is an external radio-frequency microwave signal interface, the low-frequency J30J end is an external low-frequency control signal and electrical signal interface, and the second ground button end and the third ground button end are elastically interconnected with a pad on the adapter circuit board.
Preferably, the silicon-based component is embedded with a silicon adapter plate, and the silicon connecting plate comprises a through silicon hole penetrating through the silicon adapter plate;
a plurality of dielectric layers are arranged on one end face of the silicon adapter plate, a plurality of copper wiring metals are uniformly distributed on the upper surface and the lower surface of each dielectric layer, the copper wiring metals on the upper surface and the lower surface are interconnected through copper through holes between layers, and one end of each silicon through hole is connected with one copper wiring metal on the upper surface;
the other end face of the silicon adapter plate is used as the antenna face of the silicon-based component, and the other end of the silicon through hole is connected with the radio frequency transceiving port.
Preferably, a power amplifier chip is bonded to a corresponding pad on one copper wiring metal arranged on the upper surface of the dielectric layer through nano silver paste, and the power amplifier chip is further connected to other pads on the copper wiring metal arranged on the upper surface of the dielectric layer through bonding gold wires.
Preferably, the surface of the heat dissipation shell is provided with a plurality of first radio frequency openings which are arranged in an array, and the flow channel passes through the space between every two rows of the first radio frequency openings;
the switching circuit board comprises a top metal layer and a bottom metal layer which are opposite, the top metal layer is provided with a BGA solder ball corresponding to the excitation surface bonding pad, and the bottom metal layer is provided with a bonding pad which is interconnected with the second fuzz button radio frequency coaxial electric connector and the fuzz button multi-core low-frequency connector;
and a second radio frequency opening and a low frequency opening are formed in the packaging cover plate, the second radio frequency opening is used for fixing the second fuzz button radio frequency coaxial electric connector, and the low frequency opening is used for fixing the fuzz button multi-core low frequency connector.
Preferably, the heat dissipation shell is made of 70% Si-Al high-silicon aluminum alloy material with the thermal expansion coefficient of 7 x 10 < -6 >/DEG C, the adapter circuit board is made of an FR4 printed circuit board, and the packaging cover plate is made of 27% Si-Al high-silicon aluminum alloy material.
Preferably, the antenna surface of the silicon-based component is sintered on the heat dissipation shell by adopting nano silver paste; the excitation surface of the silicon-based component is welded on the adapter circuit board through tin-lead solder; the heat dissipation shell is hermetically packaged with the packaging cover plate through a laser seal welding process.
In summary, the invention is implemented in a modular integration manner as a radio frequency microsystem packaging structure, and can realize a larger-scale array through expansion; moreover, the invention can solve the problems that the thermal expansion coefficients of the current complex components are not matched and the process temperature gradient cannot meet the assembly requirement; and finally, the three-dimensional interconnection transmission and heat dissipation functions of microwave assembly signals are integrated, so that the system volume is reduced.
Drawings
Fig. 1 is a schematic diagram of a three-dimensional interconnection and heat dissipation integrated microsystem package structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a silicon-based component of a three-dimensional integrated interconnect and heat dissipation package structure of a microsystem package according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a silicon interposer in a three-dimensional interconnection and heat dissipation integrated microsystem packaging structure according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a heat dissipation housing in a three-dimensional interconnection and heat dissipation integrated microsystem packaging structure according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a circuit board in a three-dimensional interconnection and heat dissipation integrated microsystem packaging structure according to an embodiment of the present invention;
fig. 6 is a schematic view of a package cover plate in a three-dimensional interconnection and heat dissipation integrated microsystem package structure according to an embodiment of the present invention.
Detailed Description
The three-dimensional interconnection and heat dissipation integrated microsystem packaging structure proposed by the present invention will be described in further detail with reference to fig. 1-6 and the detailed description thereof. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are all used in a non-precise scale for the purpose of facilitating and distinctly aiding in the description of the embodiments of the present invention. To make the objects, features and advantages of the present invention comprehensible, reference is made to the accompanying drawings. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the implementation conditions of the present invention, so that the present invention has no technical significance, and any structural modification, ratio relationship change or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
In the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
Referring to fig. 1, an embodiment of the present invention provides a three-dimensional interconnection and heat dissipation integrated microsystem packaging structure, which includes a heat dissipation housing 1, a silicon-based component 2, an adapter circuit board 3 and a packaging cover plate 4, which are sequentially disposed from top to bottom as shown in fig. 1. The radiating shell 1 and the packaging cover plate 4 are connected to form a closed cavity, the closed cavity is used for accommodating the silicon-based component 2 and the switching circuit board 3 which are connected with each other, wherein the silicon-based component 2 is arranged on the inner bottom surface of the radiating shell 1, and the switching circuit board 3 is connected with the packaging cover plate 4. The heat dissipation shell 1 is provided with a first type of hair button connector which penetrates through the bottom wall of the heat dissipation shell 1 and is connected with the silicon-based component 2, and in addition, as shown in fig. 4, a flow passage 22 is embedded in the heat dissipation shell 1, and the flow passage 22 is used for circulating cooling liquid. And a second fuzz button connector penetrating through the packaging cover plate 4 and connected with the switching circuit board 3 is arranged on the packaging cover plate 4. The Silicon-based component 2 is electrically interconnected with the fuzz button connector, the adapting circuit board 3 and the Silicon-based component 2 Through a metal layer, a copper Through hole, a Through Silicon Via (TSV) and a Ball Grid Array (BGA) package 13, and the fuzz button connector is used for signal transmission between the Silicon-based component 2 and the outside. The system is realized in a modular integration mode, can realize larger-scale arrays through expansion, and integrates the three-dimensional interconnection transmission and heat dissipation functions of microwave assembly signals.
In this embodiment, referring to fig. 1, the first type of hair button connector disposed on the heat dissipation housing 1 includes a first hair button radio frequency coaxial electrical connector 5, and the second type of hair button connector disposed on the encapsulation cover plate 4 includes a second hair button radio frequency coaxial electrical connector and a hair button multi-core low-frequency connector 6. The first fuzz button radio-frequency coaxial electric connector 5 and the second fuzz button radio-frequency coaxial electric connector are used for external radio-frequency microwave signal transmission, and the fuzz button multi-core low-frequency connector assembly 6 is used for external low-frequency control signal and electric signal transmission. The fuzz button is a commonly used connector for microsystems, is often used for elastic connection of an inner conductor, is arranged on an outer conductor and can also assist the connection of the outer conductor, and the fuzz button can realize simultaneous transmission of multiple signals and realize the three-dimensional interconnection of microsystems in an intensive manner.
In this embodiment, as shown in fig. 2, the silicon-based component 2 includes an antenna surface 10 and an excitation surface 12, the antenna surface 10 is provided with a radio frequency transceiver port 11 for connecting with the first fuzz button radio frequency coaxial electrical connector 5, and the excitation surface 12 is connected with the adapting circuit board 3 through a BGA solder ball array package 13. The silicon-based component 2 is prepared based on a silicon-based MEMS process, an antenna surface 10 of the silicon-based component 2 in the embodiment is provided with 16 radio frequency transceiving ports 11, the rest parts are large-area metal and used for being interconnected with the heat dissipation shell 1 to be grounded, heat dissipation can be performed through the heat dissipation shell 1, and an excitation surface 12 of the silicon-based component 2 is a solder ball array package 13. Of course, it should be understood by those skilled in the art that the number of the rf transceiver ports 11 is not limited, and the BGA package technology can effectively improve the integration level and ensure the requirement of high power consumption.
In this embodiment, as shown in fig. 1, the first fuzz button rf coaxial electrical connector 5 generally includes a first SMP rf connector 7, an internal filling medium 8, and a first fuzz button end 9, the first SMP rf connector 7 is elastically interconnected with a central contact of the first fuzz button end 9, the first SMP rf connector 7 is configured to serve as an external rf microwave signal interface, and the first fuzz button end 9 is elastically contacted with an antenna port of the silicon-based component 2.
Similarly, the second hair button radio frequency coaxial electrical connector arranged on the package cover plate 4 also comprises a second SMP radio frequency connector, an internal filling medium and a second hair button end, the second SMP radio frequency connector is used as an external radio frequency microwave signal interface, and the second hair button end is elastically interconnected with a corresponding pad on the adapting circuit board 3.
In addition, the packaging cover plate 4 is provided with the fuzz button multi-core low-frequency connector 6, two ends of the fuzz button multi-core low-frequency connector 6 are respectively a low-frequency J30J end and a second fuzz button end, the low-frequency J30J end is an external low-frequency control signal and electric signal interface, and the second fuzz button end is elastically interconnected with a bonding pad on the adapter circuit board 3.
In the present embodiment, the silicon-based component 2 is embedded with a silicon interposer 14, as shown in fig. 3, the silicon interposer 14 includes a through silicon via 15 penetrating through the silicon interposer 14. A plurality of dielectric layers are arranged on one end face of the silicon interposer 14, for example, two silicon dioxide dielectric layers 16 are adopted in the invention, a plurality of copper wiring metals 18 are arranged on each silicon dioxide dielectric layer 16, and the layers are interconnected through copper through holes 17. The through silicon via 15 in the silicon interposer 14 is manufactured by blind holes, the diameter is 20 μm, the hole depth is 200 μm, and the aspect ratio is 10: 1, solid copper is electroplated inside, and the transmission loss of a single through silicon via 15 is less than 0.13dB @10GHz after testing. The through silicon via technology is a high-density interconnection packaging technology, is gradually replacing the wire bonding technology with the mature process at present, is considered as a fourth generation packaging technology, and can effectively improve the integration level of a system by adopting the through silicon via technology.
In addition, a power amplifier chip 19 is arranged in the silicon-based component 2, and is adhered to a corresponding pad on the copper wiring metal 18 on the uppermost layer of the silicon interposer 14 by adopting nano silver paste, and a radio-frequency signal output by the power amplifier chip 19 is transmitted to another pad on the copper wiring metal 18 through a gold bonding wire 20 and is transmitted to the radio-frequency transceiving port 11 through a copper through hole 17 and a silicon through hole 15. Moreover, after the heat generated by the power amplifier chip 19 is conducted to the heat dissipation shell 1 through the copper through hole 17 array, the silicon through hole 15 array and the nano silver particle sintering interconnection welding spot, the heat of the silicon-based component is taken away by using the cooling liquid in the heat dissipation shell 1, so that the normal and stable work of the power amplifier chip 19 is ensured, and the heat dissipation performance of the system provided by the invention is effectively improved.
In this embodiment, the heat dissipation housing 1 is made of a 70% Si — Al high silicon aluminum alloy material having a thermal expansion coefficient of about 7 × 10 "6/° c, and 16 rf openings 21 for welding the first fuzz button rf coaxial electrical connector 5 are disposed on the surface of the heat dissipation housing, as shown in fig. 4, the distance between the holes of the rf openings 21 and the center of the holes is one half wavelength, and the holes are arranged on the heat dissipation housing 1 in an array form to form a 4 × 4 rectangular array.
In addition, as shown in fig. 4, the flow channel 22 is disposed at an interval from the rf opening 21 for welding the first fuzz button rf coaxial electrical connector 5, and a cooling liquid inlet 23 and a cooling liquid outlet 24 are disposed at two ends of the flow channel 22. To further improve the heat dissipation efficiency, the flow channel 22 is S-shaped, and has a rectangular cross section, and the path is parallel to each row of the rf openings 21, and is bent to enter the space between the next row when extending to the last rf opening 21 along the space between each row of the matrix array.
In this embodiment, as shown in fig. 5, the adapting circuit board 3 may be an FR4 printed circuit board, the top metal layer 25 of the adapting circuit board 3 is provided with BGA solder balls corresponding to the pads on the excitation surface 12 of the silicon-based component 2, and the bottom metal layer 27 is provided with pads for interconnecting with the fuzz button multicore low frequency connector 6.
In this embodiment, as shown in fig. 6, the package cover plate 4 may be made of 27% Si — Al high silicon aluminum alloy material, and 4 rf openings 21 and 4 low frequency openings 28 for welding the second fuzz button rf coaxial electrical connector are provided inside the package cover plate for welding the fuzz button rf coaxial electrical connector 5 and the fuzz button multicore low frequency connector 6, which is not limited in number.
The invention has the advantages that:
1. the thermal expansion coefficient of the 70 percent Si-Al high-silicon aluminum alloy material adopted by the invention is 7 multiplied by 10-6Approximately/° C, and is closer to a Si chip (thermal expansion coefficient of 4.1X 10)-6/° c) coefficient of thermal expansion, preparation therewithThe heat dissipation shell can reduce the internal stress between the silicon-based component and the metal, improve the reliability of the product and prolong the service life of the product.
2. According to the invention, the nano silver adhesive is used as a bonding material between the chip and the silicon adapter plate, and between the heat dissipation shell and the silicon-based component, compared with other solders, the assembly of a power chip can be completed under a lower temperature condition, and meanwhile, the characteristics of excellent electric and thermal conductivity, high bonding strength, high stability and low-temperature curing and high-temperature service can solve the problems that the sintering of multiple devices in the current complex components and module products is difficult and the process temperature gradient cannot meet the assembly requirement.
3. According to the invention, the fuzz button electric connector is sintered in the heat dissipation shell and the packaging cover plate, the transmission cooling liquid flow channel is arranged in the heat dissipation shell, the three-dimensional interconnection transmission and heat dissipation functions of microwave component signals are integrated, the system volume is reduced, the air tightness of the whole structure is realized through laser seal welding, the reliability of the product is improved, and the service life of the product is prolonged.
4. According to the invention, the silicon through holes with high depth-to-width ratio are adopted, and solid copper is electroplated inside, so that the density of the silicon through holes in the silicon-based component is increased while the radio frequency transmission loss is reduced, and the heat dissipation efficiency is improved.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (10)
1. A three-dimensional interconnection and heat dissipation integrated microsystem packaging structure is characterized by comprising a heat dissipation shell, a silicon-based component, a switching circuit board, a packaging cover plate and a fuzz button connector;
the heat dissipation shell is connected with the packaging cover plate to form a closed cavity, and the closed cavity is used for accommodating the silicon-based component and the switching circuit board which are connected with each other, wherein the silicon-based component is connected with the heat dissipation shell, and the switching circuit board is connected with the packaging cover plate;
the fuzz button connector comprises a first fuzz button connector and a second fuzz button connector;
the first type of hair button connector penetrates through the bottom wall of the heat dissipation shell to be connected with the silicon-based component, and a flow channel is embedded in the heat dissipation shell and used for circulating cooling liquid;
the second fuzz button connector penetrates through the packaging cover plate and is connected with the switching circuit board;
the silicon-based component realizes the electrical interconnection among the fuzz button connector, the switching circuit board and the silicon-based component through the metal layer, the copper through hole, the silicon through hole and the BGA solder ball array package, and the fuzz button connector is used for signal transmission between the silicon-based component and the outside.
2. The three-dimensional interconnecting and heat dissipating integrated microsystem packaging structure of claim 1, wherein the first type of hair button connector comprises a first hair button radio frequency coaxial electrical connector, the second type of hair button connector comprises a second hair button radio frequency coaxial electrical connector and a hair button multi-core low frequency connector, the first hair button radio frequency coaxial electrical connector and the second hair button radio frequency coaxial electrical connector are used for external radio frequency microwave signal transmission, and the hair button multi-core low frequency connector is used for external low frequency control signal and electrical signal transmission.
3. The three-dimensional interconnecting and heat dissipating integrated microsystem packaging structure of claim 2, wherein the silicon-based component comprises an antenna surface and a driving surface which are opposite to each other, the antenna surface is provided with a radio frequency transceiver port for connecting with the first fuzz button radio frequency coaxial electrical connector, and the driving surface is connected with the adapting circuit board through BGA packaging technology.
4. The three-dimensional interconnection and heat dissipation integrated microsystem packaging structure of claim 3, wherein the first ground button radio frequency coaxial electrical connector comprises a first SMP radio frequency connector and a first ground button end which are connected with each other and located at two ends respectively, and an internal filling medium, the first SMP radio frequency connector is an external radio frequency microwave signal interface, and the first ground button end is in elastic contact with the radio frequency transceiver.
5. The three-dimensional interconnection and heat dissipation integrated microsystem packaging structure of claim 2, wherein the second ground button rf coaxial electrical connector comprises a second SMP rf connector and a second ground button end connected to each other and located at two ends, respectively, and an internal filling medium, the two ends of the ground button multicore low frequency connector are respectively a low frequency J30J end and a third ground button end, the second SMP rf connector is an external rf microwave signal interface, the low frequency J30J end is an external low frequency control signal and electrical signal interface, and the second ground button end and the third ground button end are elastically interconnected with a pad on the adapter circuit board.
6. The three-dimensional interconnect and heat dissipation integrated microsystem package structure of claim 3, wherein a silicon interposer is embedded in the silicon-based component, the silicon interposer comprising through-silicon vias extending therethrough;
a plurality of dielectric layers are arranged on one end face of the silicon adapter plate, a plurality of copper wiring metals are uniformly distributed on the upper surface and the lower surface of each dielectric layer, the copper wiring metals on the upper surface and the lower surface are interconnected through copper through holes between layers, and one end of each silicon through hole is connected with one copper wiring metal on the upper surface;
the other end face of the silicon adapter plate is used as the antenna face of the silicon-based component, and the other end of the silicon through hole is connected with the radio frequency transceiving port.
7. The three-dimensional interconnection and heat dissipation integrated microsystem packaging structure of claim 6, wherein a power amplifier chip is bonded to a corresponding pad on one copper wiring metal arranged on the upper surface of the dielectric layer through a nano silver paste, and the power amplifier chip is further connected to other pads on the copper wiring metal arranged on the upper surface of the dielectric layer through a gold bonding wire.
8. The three-dimensional interconnecting and heat dissipating integrated microsystem packaging structure of claim 2, wherein the heat dissipating housing surface is provided with a plurality of first radio frequency openings arranged in an array, and the flow channel passes through between every two rows of the first radio frequency openings;
the switching circuit board comprises a top metal layer and a bottom metal layer which are opposite, the top metal layer is provided with a BGA solder ball corresponding to the excitation surface bonding pad, and the bottom metal layer is provided with a bonding pad which is interconnected with the second fuzz button radio frequency coaxial electric connector and the fuzz button multi-core low-frequency connector;
and a second radio frequency opening and a low frequency opening are formed in the packaging cover plate, the second radio frequency opening is used for fixing the second fuzz button radio frequency coaxial electric connector, and the low frequency opening is used for fixing the fuzz button multi-core low frequency connector.
9. The three-dimensional interconnect and heat dissipation integrated microsystem packaging structure of claim 1, wherein the heat dissipation housing has a thermal expansion coefficient of 7 x 10-6The package cover plate is made of a 70% Si-Al high-silicon aluminum alloy material at/DEG C, the adapter circuit board is made of an FR4 printed circuit board, and the package cover plate is made of a 27% Si-Al high-silicon aluminum alloy material.
10. The three-dimensional interconnecting and heat dissipating integrated microsystem packaging structure of claim 2, wherein the antenna surface of the silicon-based component is sintered on the heat dissipating housing using a nano silver paste; the excitation surface of the silicon-based component is welded on the adapter circuit board through tin-lead solder; the heat dissipation shell is hermetically packaged with the packaging cover plate through a laser seal welding process.
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