CN114242548B - Filament of ion source for ion implanter - Google Patents
Filament of ion source for ion implanter Download PDFInfo
- Publication number
- CN114242548B CN114242548B CN202111321156.6A CN202111321156A CN114242548B CN 114242548 B CN114242548 B CN 114242548B CN 202111321156 A CN202111321156 A CN 202111321156A CN 114242548 B CN114242548 B CN 114242548B
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- China
- Prior art keywords
- filament
- cathode
- support structure
- ion source
- fastener
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000002784 hot electron Substances 0.000 abstract description 7
- 230000002035 prolonged effect Effects 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 description 36
- 239000000463 material Substances 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- 229910001080 W alloy Inorganic materials 0.000 description 3
- 229910001362 Ta alloys Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
The invention relates to a filament of an ion source for an ion implanter, wherein the longitudinal section area of an active part of the filament is 70-90mm 2; wherein the cathode fixing means for the ion source comprises: a fastener; the fixture is arranged on the periphery of the cathode, a lug is arranged on the fixture, a connecting hole is formed in the lug, and the connecting hole is used for being matched with a fastener to fix the fixture on the cathode; and the supporting structure is connected with the convex blocks through fasteners. The filament of the invention needs to be matched with a novel cathode fixing device for use, and the cathode fixing device cancels a middle rod at the bottom center of a cathode cup body, thereby increasing the available space in a cathode cavity; on this basis, the present inventors have increased the longitudinal sectional area of the active portion of the filament by changing the size and shape of the active portion of the filament, and reduced the filament current, thereby enabling the life of the filament to be prolonged while ensuring the hot electron release efficiency of the filament.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a filament of an ion source for an ion implanter.
Background
Ion implantation is a technique for selectively implanting impurity materials into semiconductor materials. After the impurity materials are ionized in the ionization chamber, the ions are accelerated to form an ion beam of a set energy, which bombards the wafer surface and into the wafer to a depth associated with the energy.
The ion implantation process is performed in an ion implanter. Ion implanters generally include an ion source, a mass spectrometer, an accelerator, and a process chamber. The ion source comprises a cathode and a filament, and hot electrons generated by the filament in the cathode cup bombard ion source gas under the action of an electric field to ionize the ion source gas into plasma. The number of hot electrons released by the filament is determined by the filament current and the longitudinal cross-sectional area of the filament portion (equal to the diameter of said portion) which mainly functions to emit electrons.
The center of the bottom of the cathode cup of the conventional ion source (shown in fig. 1) is provided with an intermediate rod for fixing the cathode, wherein the longitudinal sectional area of the filament portion mainly functioning to emit electrons is about 52mm 2. The size and shape design of the filament is limited because the internal space of the cathode cup is limited and the filament cannot be in contact with the cathode cup and the intermediate rod. In the prior art, in order to ensure the efficiency of releasing hot electrons from the filament, the filament current is usually large, which accelerates the consumption of the filament itself, and causes the filament to be easy to break, which seriously affects the service life of the filament.
Therefore, there is a need to develop new filaments and ion sources that enable the life of the filament to be extended while ensuring the efficiency of hot electron release of the filament.
Disclosure of Invention
The object of the present invention is to overcome the disadvantages of the prior art and to provide a new filament for an ion source for an ion implanter. The filament needs to be matched with a novel cathode fixing device for use, and the cathode fixing device cancels a middle rod at the bottom center of a cathode cup body, so that the available space in a cathode cavity is increased; on this basis, the present inventors increased the longitudinal sectional area of the active portion of the filament by changing the size and shape of the filament portion (active portion of the filament for short) that mainly functions to emit electrons, and reduced the filament current, thereby enabling the life of the filament to be prolonged while ensuring the thermionic emission efficiency of the filament.
It is a further object of the present invention to provide an ion source comprising said filament and said cathode fixture.
It is a further object of the present invention to provide an ion implanter comprising the ion source.
In order to achieve the above object, the present invention provides the following technical solutions.
A filament for an ion source of an ion implanter, the longitudinal cross-sectional area of the active portion of which is 70-90mm 2; the active part is in a smooth curve shape and is axisymmetric; the shortest distance from the two ends of the active part to the inner side wall of the cathode is equal and is 3-4mm.
The present invention also provides an ion source for an ion implanter, comprising:
a cathode having a cup-shaped structure;
The filament is arranged in the cathode;
the filament clamp is used for fixing the filament; and
A cathode fixture, comprising: a fastener; the fixture is arranged on the periphery of the cathode, a lug is arranged on the fixture, a connecting hole is formed in the lug, and the connecting hole is used for being matched with a fastener to fix the fixture on the cathode; and the supporting structure is connected with the convex blocks through fasteners.
The invention also provides an ion implanter comprising the ion source.
Compared with the prior art, the invention has the beneficial effects that:
The present invention provides a new filament for an ion source of an ion implanter. The filament needs to be matched with a novel cathode fixing device for use, and the cathode fixing device cancels a middle rod at the bottom center of a cathode cup body, so that the available space in a cathode cavity is increased; on this basis, the present inventors have increased the longitudinal sectional area of the active portion of the filament by changing the size and shape of the active portion of the filament, and reduced the filament current, thereby enabling the life of the filament to be prolonged while ensuring the hot electron release efficiency of the filament.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
fig. 1 is a schematic view showing a partial structure of a conventional ion source.
Fig. 2 is a schematic view of the filament structure of the present invention.
Fig. 3 is a schematic structural view of an exemplary cathode fixing device of the present invention.
Fig. 4 is a schematic structural view of another exemplary cathode fixing device of the present invention.
Description of the reference numerals
100 Is a first clamp, 200 is a second clamp, 300 is a first bump, 400 is a second bump, 301 is a first connection hole, 401 is a second connection hole, 500 is a fastener, 601 is a first support structure, 602 is a second support structure, 700 is a snap ring, 800 is a third bump, 801 is a third connection hole, 900 is a fourth bump, 1001 is a third support structure, 1002 is a fourth support structure, 1100 is a filament, and 1200 is a cathode.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is only exemplary and is not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.
Various structural schematic diagrams according to embodiments of the present disclosure are shown in the drawings. The figures are not drawn to scale, wherein certain details are exaggerated for clarity of presentation and may have been omitted. The shapes of the various regions, layers and relative sizes, positional relationships between them shown in the drawings are merely exemplary, may in practice deviate due to manufacturing tolerances or technical limitations, and one skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present therebetween. In addition, if one layer/element is located "on" another layer/element in one orientation, that layer/element may be located "under" the other layer/element when the orientation is turned.
The longitudinal sectional area of the filament active part in the existing ion source is smaller, the current is larger, the consumption of the filament is accelerated, the phenomenon of disconnection is easy to occur, and the service life of the filament is seriously influenced. To this end, the invention provides a new filament for an ion source of an ion implanter, the longitudinal cross-sectional area of the active part of which is 70-90mm 2; the active part is in a smooth curve shape and is axisymmetric; the shortest distance from the two ends of the active part to the inner side wall of the cathode is equal and is 3-4mm.
The filament of the invention needs to be matched with a novel cathode fixing device for use, and the cathode fixing device cancels a middle rod at the bottom center of a cathode cup body, thereby increasing the available space in a cathode cavity; on this basis, the present inventors have increased the longitudinal sectional area of the active portion of the filament by changing the size and shape of the active portion of the filament, and reduced the filament current, thereby enabling the life of the filament to be prolonged while ensuring the hot electron release efficiency of the filament.
The invention will be further described with reference to the accompanying drawings.
Fig. 2 shows a schematic structure of the filament of the present invention. The filament 1100 of the present invention includes straight portions (not shown in fig. 2) at both ends and a curved portion (i.e., an active portion) in the middle. Preferably, the longitudinal cross-sectional area of the active part of the filament of the present invention is 80-90mm 2. In the present invention, the longitudinal cross-sectional area of the active portion of the filament is equal to the diameter of the filament multiplied by the actual length of the active portion of the filament. The longitudinal sectional area of the active part of the filament is increased by about 35-73% compared with that of the existing filament, so that the filament current of the invention can be reduced by 35-73% compared with that of the existing filament, thereby reducing the consumption of the filament and prolonging the service life.
In the present invention, the filament may be a metal material wire having uniform thickness. The metal material can be tungsten, molybdenum, tungsten alloy or molybdenum alloy, etc.
Preferably, the actual length of the active part of the filament of the present invention is 40-50mm. Preferably, the filament of the present invention has a diameter of 1.7-1.9mm. The active portion of the filament of the present invention may be smoothly undulating. The active moiety of the present invention is devoid of tips to prevent tip effects.
The cathode of the present invention may be a cylindrical cup-shaped structure. The cathode cavity may have an inner diameter of 22-26mm.
In a specific embodiment, the diameter of the filament is 1.78mm, the active part of the filament is smooth wave-shaped and axisymmetric, the actual length of the active part of the filament is 49.42mm, the longitudinal sectional area of the active part of the filament is 87.97mm 2, the shortest distance from the two ends of the active part of the filament to the inner side wall of the cathode is 3.42mm, and the inner diameter of the cathode cavity is 24.16mm.
The present invention also provides an ion source for an ion implanter, comprising: a cathode 1200, the cathode 1200 having a cup-shaped structure; a filament 1100 disposed in the cathode 1200; a filament clamp for fixing the filament 1100; and a cathode fixing device including: a fastener; the fixture is arranged on the periphery of the cathode, a lug is arranged on the fixture, a connecting hole is formed in the lug, and the connecting hole is used for being matched with a fastener to fix the fixture on the cathode; and the supporting structure is connected with the convex blocks through fasteners.
Fig. 3 shows a schematic structural view of an exemplary cathode fixing device of the present invention. Specifically, as shown in fig. 3, the cathode fixing device of the present invention includes: the first clamp 100, two ends of the first clamp 100 are respectively provided with a first bump 300 and a second bump 400, the first bump 300 is provided with a first connecting hole (not shown in fig. 3), and the second bump 400 is provided with a second connecting hole (not shown in fig. 3); the second clamp 200, two ends of the second clamp 200 are respectively provided with a first bump 300 and a second bump 400, the first bump 300 is provided with a first connecting hole 301, and the second bump 400 is provided with a second connecting hole 401; a fastener 500; and a first support structure 601 and a second support structure 602, the first support structure 601 being connected to the first bump 300 by the fastener 500, the second support structure 602 being connected to the second bump 400 by the fastener 500.
In the present invention, the first clip 100 and the second clip 200 are each arcuate snap rings, preferably semi-circular snap rings. The first clip 100 and the second clip 200 are sized to match. The inner circumferences of the first and second clips 100 and 200 are smaller than the outer circumference of the cathode cup, and their widths may be 6-10mm. If a flange is provided at the rim of the cathode cup, the first and second clips 100 and 200 are preferably provided near the flange to be positioned using the flange. The invention can ensure that the filament is at a proper position in the cathode cup (the filament is about 3mm away from the bottom of the cup) by adjusting the position relation of the supporting structure, the filament clamp and the linear part of the filament. The materials of the first clip 100 and the second clip 200 of the present invention may be, for example, tungsten alloy, molybdenum alloy, tantalum alloy, or the like.
The first bump 300 and the second bump 400 are symmetrically disposed at both ends of the first clip 100. First bump the first bump 300, the second bump 400 and the first clip 100 may be integrally formed or welded, preferably integrally formed.
The second clip 200 is symmetrically provided at both ends thereof with a first bump 300 and a second bump 400. The first bump 300, the second bump 400 and the second clip 200 may be integrally formed or welded, preferably integrally formed.
The dimensions of the first bump 300 and the second bump 400 are preferably the same to ensure that the cathode fixing means of the present invention is of a symmetrical structure, thereby advantageously ensuring that the ion implantation concentration is the same in all regions of the material to be implanted with ions.
The fastener 500 of the present invention is preferably a screw.
Fig. 4 shows a schematic structural view of another exemplary cathode fixing device of the present invention. Specifically, as shown in fig. 4, the cathode fixing device of the present invention includes: the clamping ring 700, the two ends of the clamping ring 700 are respectively provided with a third bump 800, the third bump 800 is provided with a third connecting hole 801, the middle of the clamping ring 700 is provided with a fourth bump 900, and the fourth bump 900 is provided with a fourth connecting hole (not shown in fig. 4); a fastener 500; and a third support structure 1001 and a fourth support structure 1002, the third support structure 1001 being connected to the third bump 800 by a fastener 500, the fourth support structure 1002 being connected to the fourth bump 900 by a fastener 500.
Preferably, the inner circumference of the collar 700 is smaller than the outer circumference of the cathode cup, which may have a width of 6-10mm. If a flange is provided at the rim of the cathode cup, the snap ring 700 is preferably positioned adjacent to the flange to be positioned with the flange. The invention can ensure that the filament is in place in the cathode cup (the filament is about 3mm from the bottom of the cup) by adjusting the length of the support structure, the filament clamp, or the straight portion of the filament (including the straight portion and the curved portion). The material of the collar 700 of the present invention may be, for example, tungsten alloy, molybdenum alloy, tantalum alloy, or the like.
Preferably, the size of the fourth bump 900 is substantially equal to the sum of the sizes of the two third bumps 800 at both ends of the snap ring 700, so as to ensure that the cathode fixing device of the present invention has a symmetrical structure, thereby advantageously ensuring that the ion implantation concentration is the same in all regions of the material to be implanted with ions.
All the connecting holes of the invention can be through holes with the inner walls provided with threads or through holes with the inner walls not provided with threads.
The support structure of the invention is oriented vertically with respect to the straight portions of the filament. The support structure and filament clamp of the present invention are secured to the body of the ion implanter after passing through a layer of insulating material, such as ceramic.
The longitudinal section of the support structure of the invention is preferably in the same plane as the cross section of the clamp.
The cathode fixing device of the invention eliminates the middle rod at the bottom of the cathode cup body, increases the available space in the cathode cavity, and makes it possible to increase the longitudinal section area of the active part of the filament and reduce the filament current. In addition, the cathode fixing device of the invention eliminates the middle rod at the bottom of the cathode cup body, and the fixture arranged at the periphery of the cathode and the supporting structure connected with the fixture are used for fixing the cathode, so that the bearing part is changed into an integral outer ring from the middle rod to bear force, thereby effectively avoiding short circuit caused by deformation of the middle rod, improving the utilization rate of the ion implanter and saving manpower and material resources.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. An ion source for an ion implanter, comprising:
a cathode having a cup-shaped structure;
The filament is arranged in the cathode, and the longitudinal sectional area of the active part of the filament is 70-90mm 2; the active part is in a smooth curve shape and is axisymmetric; the shortest distance from the two ends of the active part to the inner side wall of the cathode is equal and is 3-4mm;
the filament clamp is used for fixing the filament; and
A cathode fixture, comprising: a fastener; the fixture is arranged on the periphery of the cathode, a lug is arranged on the fixture, a connecting hole is formed in the lug, and the connecting hole is used for being matched with a fastener to fix the fixture on the cathode; and a support structure connected to the bump by a fastener;
the fixture includes:
The first clamp is characterized in that two ends of the first clamp are respectively provided with a first lug and a second lug, a first connecting hole is formed in the first lug, and a second connecting hole is formed in the second lug; and
The first connecting hole is formed in the first lug, and the second connecting hole is formed in the second lug; and
The support structure comprises a first support structure and a second support structure, the first support structure is connected with the first bump through a fastener, and the second support structure is connected with the second bump through a fastener;
Or the fixture comprises:
The clamping ring is provided with third protruding blocks at two ends respectively, third connecting holes are formed in the third protruding blocks, a fourth protruding block is arranged in the middle of the clamping ring, and fourth connecting holes are formed in the fourth protruding blocks; and
The support structure comprises a third support structure and a fourth support structure, the third support structure is connected with the third bump through a fastener, and the fourth support structure is connected with the fourth bump through a fastener.
2. The ion source of claim 1, wherein the longitudinal cross-sectional area of the active portion of the filament is 80-90mm 2.
3. The ion source of claim 1, wherein the active portion of the filament has an actual length of 40-50mm and a diameter of 1.7-1.9mm.
4. The ion source of claim 1, wherein the cathode fixtures are symmetrical in configuration.
5. The ion source of claim 1, wherein the top end of the support structure is provided with a threaded hole.
6. The ion source of claim 5, wherein the support structure is a support rod.
7. The ion source of claim 1, wherein the fastener is a screw.
8. An ion implanter comprising an ion source as claimed in any one of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111321156.6A CN114242548B (en) | 2021-11-09 | 2021-11-09 | Filament of ion source for ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111321156.6A CN114242548B (en) | 2021-11-09 | 2021-11-09 | Filament of ion source for ion implanter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114242548A CN114242548A (en) | 2022-03-25 |
| CN114242548B true CN114242548B (en) | 2024-06-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111321156.6A Active CN114242548B (en) | 2021-11-09 | 2021-11-09 | Filament of ion source for ion implanter |
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|---|---|
| CN (1) | CN114242548B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118553585B (en) * | 2024-07-26 | 2024-10-22 | 季华恒一(佛山)半导体科技有限公司 | Ion source temperature regulation system, method and ion implanter |
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| JPH03257748A (en) * | 1990-01-22 | 1991-11-18 | Tokyo Electron Ltd | Ion generating method |
| US5256947A (en) * | 1990-10-10 | 1993-10-26 | Nec Electronics, Inc. | Multiple filament enhanced ion source |
| EP1065696A2 (en) * | 1999-06-29 | 2001-01-03 | Lucent Technologies Inc. | Ion implantation apparatus and ion source and ion source subassembly for use in ion implantation apparatus |
| KR200271808Y1 (en) * | 2002-01-28 | 2002-04-13 | 아남반도체 주식회사 | Filament of a ion implanter |
| KR20020091371A (en) * | 2001-05-30 | 2002-12-06 | 삼성전자 주식회사 | Filament for generating ion beam in ion implantation device |
| KR20040010873A (en) * | 2002-07-25 | 2004-02-05 | 삼성전자주식회사 | Jig for insertion filament on ion implantation apparatus |
| KR20060030688A (en) * | 2004-10-06 | 2006-04-11 | 삼성전자주식회사 | Filament of ion implantation equipment |
| JP2006216440A (en) * | 2005-02-04 | 2006-08-17 | Mitsui Eng & Shipbuild Co Ltd | Method for producing filament used for ion source and ion source |
| KR20080102830A (en) * | 2007-05-22 | 2008-11-26 | 삼성전자주식회사 | Ion generator |
| JP2010287415A (en) * | 2009-06-11 | 2010-12-24 | Nissin Ion Equipment Co Ltd | Filament and ion source equipped therewith |
| DE202015003804U1 (en) * | 2015-05-27 | 2015-07-24 | Maik Radtke | Pipe quick release clamp |
| KR20150095279A (en) * | 2014-02-13 | 2015-08-21 | (주)제이씨이노텍 | Cathode setting device for semiconductor equipment |
| CN107331596A (en) * | 2017-06-26 | 2017-11-07 | 武汉华星光电半导体显示技术有限公司 | Filament, ionisation chamber and ion implantation equipment |
| CN111613504A (en) * | 2019-02-22 | 2020-09-01 | 力晶科技股份有限公司 | Ion source structure of semiconductor ion implanter |
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2021
- 2021-11-09 CN CN202111321156.6A patent/CN114242548B/en active Active
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|---|---|---|---|---|
| JPH03257748A (en) * | 1990-01-22 | 1991-11-18 | Tokyo Electron Ltd | Ion generating method |
| US5256947A (en) * | 1990-10-10 | 1993-10-26 | Nec Electronics, Inc. | Multiple filament enhanced ion source |
| EP1065696A2 (en) * | 1999-06-29 | 2001-01-03 | Lucent Technologies Inc. | Ion implantation apparatus and ion source and ion source subassembly for use in ion implantation apparatus |
| KR20020091371A (en) * | 2001-05-30 | 2002-12-06 | 삼성전자 주식회사 | Filament for generating ion beam in ion implantation device |
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| KR20040010873A (en) * | 2002-07-25 | 2004-02-05 | 삼성전자주식회사 | Jig for insertion filament on ion implantation apparatus |
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| JP2006216440A (en) * | 2005-02-04 | 2006-08-17 | Mitsui Eng & Shipbuild Co Ltd | Method for producing filament used for ion source and ion source |
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| CN111613504A (en) * | 2019-02-22 | 2020-09-01 | 力晶科技股份有限公司 | Ion source structure of semiconductor ion implanter |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114242548A (en) | 2022-03-25 |
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