CN114242561A - Quasi-periodic large-area high-temperature-resistant infrared heat radiator and preparation method thereof - Google Patents

Quasi-periodic large-area high-temperature-resistant infrared heat radiator and preparation method thereof Download PDF

Info

Publication number
CN114242561A
CN114242561A CN202111493941.XA CN202111493941A CN114242561A CN 114242561 A CN114242561 A CN 114242561A CN 202111493941 A CN202111493941 A CN 202111493941A CN 114242561 A CN114242561 A CN 114242561A
Authority
CN
China
Prior art keywords
temperature
quasi
dielectric layer
infrared
periodic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111493941.XA
Other languages
Chinese (zh)
Inventor
刘锋
李晓温
文政绩
郝加明
许昊
石溪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Normal University
Original Assignee
Shanghai Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Normal University filed Critical Shanghai Normal University
Priority to CN202111493941.XA priority Critical patent/CN114242561A/en
Publication of CN114242561A publication Critical patent/CN114242561A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01K—ELECTRIC INCANDESCENT LAMPS
    • H01K1/00—Details
    • H01K1/02—Incandescent bodies
    • H01K1/04—Incandescent bodies characterised by the material thereof
    • H01K1/08—Metallic bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01K—ELECTRIC INCANDESCENT LAMPS
    • H01K1/00—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01K—ELECTRIC INCANDESCENT LAMPS
    • H01K3/00—Apparatus or processes adapted to the manufacture, installing, removal, or maintenance of incandescent lamps or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01K—ELECTRIC INCANDESCENT LAMPS
    • H01K3/00—Apparatus or processes adapted to the manufacture, installing, removal, or maintenance of incandescent lamps or parts thereof
    • H01K3/02—Manufacture of incandescent bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

The invention discloses a quasi-periodic large-area high-temperature-resistant infrared heat radiator and a preparation method thereof, wherein the radiator is composed of a multilayer film structure and comprises a substrate, a metal layer, a medium a and a medium b, the thickness of the medium layer is obtained by optimizing a genetic algorithm, the thickness of each layer is 100-600nm, and the preparation method of a film system can adopt one or more combinations of magnetron sputtering, ion beam sputtering, electron beam evaporation, thermal evaporation, pulse laser deposition, atomic layer deposition and the like. The infrared radiator has the advantages of high radiance, the peak radiance is close to 100%, the structure is simple, the large-area preparation is easy, the wavelength can be regulated and controlled, the infrared radiator can be prepared on a flexible substrate, the infrared radiator can resist the high temperature of 1000K and the like, and the infrared radiator has good application prospect on an infrared light source, chemical molecular characteristic peak detection, infrared imaging, photoelectric characteristic identification and a novel infrared spectrometer.

Description

Quasi-periodic large-area high-temperature-resistant infrared heat radiator and preparation method thereof
Technical Field
The invention relates to the field of functional materials, in particular to a quasi-periodic large-area high-temperature-resistant infrared heat radiator and a preparation method thereof.
Background
Since the improvement of the bulb, incandescent bulb has become one of the main light sources, and plays an indispensable role in human life. Light sources generally produce light by heating incandescent lamp materials to high temperatures, referred to as heat sources, and typically have a broadband emission spectrum and a quasi-isotropic emission behavior. However, heat radiators with narrow-band emission peaks and high orientation are of great interest in various applications, such as high efficiency infrared sensing, health detection, thermophotovoltaics, and the like. The infrared thermal radiation imaging technology plays a wide and huge role in the novel coronavirus epidemic situation. For a given sensing application, only a bandwidth of less than 50cm is required-1Because most common molecules have a unique and very narrow infrared response, which is related to their own molecular vibrations. The traditional infrared light source needs a light splitting system when forming a spectrometer, but the light splitting system of an infrared band has low efficiency, needs to occupy a large space and cannot meet the requirement of the miniaturization trend of the system. However, the micro-electro-mechanical system (MEMS) infrared narrow-band radiation source, the quantum cascade infrared laser, the infrared light emitting diode and other light sources can be miniaturized and integrated, and the problems that large-area preparation cost cannot be achieved and the like exist. The problem that a photonic crystal type thermal radiation infrared light source cannot be prepared in a large area and is high in cost is solved, but the structure generally has more layers and thicker thickness and has the defect of incapability of resisting high temperature. Therefore, the development of a miniature infrared heat radiator which is low in cost, excellent in performance, adjustable in wavelength and resistant to high temperature becomes a research hotspot in the field of infrared application.
Patent CN106768352A discloses an infrared narrow band radiation source and a method for preparing the same, the radiation source is composed of a multilayer film structure, including a metal layer, a dielectric cavity layer and a dielectric bragg reflector, the thickness of the dielectric cavity layer and the thickness of the dielectric bragg reflector can adjust the radiation center wavelength of the infrared narrow band radiation source, the method for preparing the film system can adopt one or more combinations of magnetron sputtering, ion beam sputtering, electron beam evaporation, thermal evaporation, pulsed laser deposition, atomic layer deposition, etc., however, the infrared narrow band radiation source disclosed in the patent has the following defects: (1) the metal substrate is made of gold, silver, copper, aluminum, tungsten, tantalum and rhenium metal materials which are poor in adhesion and easy to demould, and the gold, silver and other materials are not high in temperature resistance; (2) the material of the dielectric layer is germanium, silicon, zinc sulfide or silicon monoxide and the like, the germanium and the zinc sulfide are not high-temperature resistant, and the refractive index is greatly changed along with the increase of the temperature, so that the radiation peak can be deviated along with the increase of the temperature; (3) the heat radiation period is composed of a metal layer, a medium cavity layer and a medium Bragg reflector, the number of the medium Bragg reflector is at least 5, the number of the layers is large, and the thickness is thick. On the basis, the invention introduces a genetic algorithm to optimize the structural thickness of the radiator, selects a material with good high-temperature resistance and adhesiveness, and effectively solves the problems of high-temperature demoulding and peak position deviation along with temperature change.
Disclosure of Invention
Aiming at the problems of the traditional infrared light source, the invention provides a quasi-periodic large-area high-temperature-resistant infrared heat radiator and a preparation method thereof.
The purpose of the invention is realized by the following technical scheme:
a quasi-periodic large area high temperature resistant infrared heat radiator, comprising:
a substrate having a small thermal expansion coefficient;
the metal layer has high temperature resistance and strong adhesion;
the dielectric layer a is high-temperature resistant and has an absorption coefficient close to 0 in a radiation waveband;
the dielectric layer b is high-temperature resistant and has an absorption coefficient close to 0 in a radiation waveband;
the dielectric layers a and the dielectric layers b are sequentially and alternately arranged in a plurality of layers, and the thickness of each layer is 100-600 nm.
The working wavelength of the infrared narrow-band radiation source can cover short waves (1.1-3 mu m) and medium waves (3-6 mu m); the radiation emissivity epsilon can be as high as 100%. The infrared radiator has the advantages of high radiance, the peak radiance is close to 100%, the structure is simple, the large-area preparation is easy, the wavelength can be regulated and controlled, the infrared radiator can be prepared on a flexible substrate, the infrared radiator can resist the high temperature of 1000K and the like, and the infrared radiator has good application prospect on an infrared light source, chemical molecular characteristic peak detection, infrared imaging, photoelectric characteristic identification and a novel infrared spectrometer.
Further, the substrate is made of a high-temperature resistant material, and a flexible substrate can be adopted.
Further, the metal layer is made of chromium.
Further, the thickness of the metal layer is much greater than the penetration depth of the radiation source into the metal.
Further, the thickness of the metal layer is 100-200 nm.
Further, the dielectric layer a is a dielectric layer made of silicon dioxide.
Further, the dielectric layer b is a dielectric layer made of niobium pentoxide.
The metal layer can be chromium, and the thickness of the metal layer is far greater than the penetration depth of the radiation source to the metal; the medium a can be silicon dioxide, the medium b can be a semiconductor or compound material such as niobium pentoxide and the like with weak absorption property in a radiation wave band, the materials generally have high temperature resistance, and the refractive indexes of the two materials are greatly different.
Furthermore, the dielectric layers a and the dielectric layers b are sequentially and alternately arranged with 6-10 layers, and the thickness of each layer is 100-600 nm.
A preparation method of a quasi-periodic large-area high-temperature-resistant infrared heat radiator comprises the following steps:
step 1: growing a metal layer on the substrate by electron beam evaporation, wherein the thickness of the metal layer is far larger than the penetration depth of the radiation source to the metal;
step 2: preparing a dielectric layer a and a dielectric layer b according to the result of genetic algorithm design, and controlling the thickness of each layer of dielectric film through crystal control or light control;
and step 3: testing the reflection spectrum R of the prepared infrared heat radiator, wherein the absorption spectrum A is 1-R (wherein R is the reflectivity, and A is the absorptivity);
and 4, step 4: the prepared infrared heat emission period is placed on a high-temperature heating table for heating, and the heat radiation spectrum of the prepared infrared heat emission period is tested.
Step 1, growing a metal layer on a substrate, and annealing for 2 hours at 200 ℃; and 2, heating the substrate to 200 ℃ in the growth process of the step 2, and annealing for 2h after the growth is finished.
The prepared infrared heat radiator structure has a quasi-periodic thickness of sub-wavelength, can resist the high temperature of 1000K, and the refractive index of the medium b is larger than that of the medium a.
The method of the invention makes up the defects of thicker integral thickness, no high temperature resistance and the like of the traditional infrared radiator, and realizes the infrared radiator which has quasi-period of short wave (1.1-3 mu m) and medium wave (3-6 mu m), can be prepared in large area, has the characteristics of high temperature resistance and the like. The infrared radiator structure designed based on the genetic algorithm is a quasiperiodic structure, the thickness is a sub-wavelength, and the infrared radiator can be prepared in a large area.
Compared with the prior art, the invention has the following beneficial effects:
because the metal layer is selected, the chromium has better adhesiveness and high-temperature resistance; the material of the dielectric layer is selected, and both the silicon oxide and the niobium oxide have better high-temperature resistance; the thickness is optimized and determined through a genetic algorithm, the thickness is thin in the whole period, the number of layers is small, the preparation of a heat radiation device is facilitated, and the device has the high-temperature resistance characteristic.
1. The structure of the infrared heat radiator is optimized by a genetic algorithm, and the whole thickness of the structure is a quasiperiodic structure and is thinner and has a sub-wavelength.
2. The infrared heat radiator of the invention is a quasi-periodic film system structure system, and can be prepared in large area.
3. The infrared heat radiator can resist the high temperature of 1000K.
Drawings
FIG. 1 is a schematic diagram of a quasi-periodic large-area high-temperature-resistant infrared heat radiator according to the present invention;
reference numerals: 1-substrate, 2-metal layer, 3-dielectric a, 4-dielectric b.
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
As shown in fig. 1, a structure diagram of a quasi-periodic large-area high-temperature-resistant infrared heat radiator: comprises a substrate 1, a metal layer (e.g. Cr)2, and a medium a (e.g. SiO)2)3 medium b (e.g. Nb)2O5)4, wherein, a) the substrate has a low coefficient of thermal expansion; b) the metal chromium Cr is high temperature resistant and has strong adhesion; c) dielectric material SiO2And Nb2O5The material is high temperature resistant, the absorption coefficient of the material in the middle infrared band is close to 0, the refractive index is less along with the temperature change, and the thermal expansion coefficient is less.
The preparation and radiation spectrum test of the infrared heat radiator comprise the following steps:
step 1: growing a metal layer on the substrate through electron beam evaporation, and annealing at 200 ℃ for 2 h; in order to make the transmittance of the film system zero, the film thickness of the metal layer is far greater than the penetration depth of the radiation source to the metal, and the metal film has high reverse effect of infrared broadband;
step 2: preparing a dielectric layer according to a result of genetic algorithm design; controlling the thickness of each layer of dielectric film through crystal control or light control; heating the substrate to 200 ℃ in the growth process, and annealing for 2h after growth;
and step 3: testing the reflection spectrum R of the prepared infrared heat radiator, wherein the absorption spectrum A is 1-R;
and 4, step 4: the prepared infrared thermal emission is heated on a high temperature heating table (such as 1000K) during the preparation process, and the thermal radiation spectrum is tested.
Wherein, the genetic algorithm in the step 2 specifically comprises the following steps: an intelligent algorithm for optimizing multivariable problems utilizes an evolutionary theory proposed by Darwin as a concept, randomly generated individuals are evaluated through a self-defined evaluation system, and individuals with relatively later scores are eliminated in each iteration, so that the optimization purpose is realized. After a certain number of iterations, the algorithm converges and the variable value corresponding to the optimal solution is obtained.
In the process of optimizing and realizing the infrared heat radiator, in order to better describe the evolution and population propagation characteristics of a genetic algorithm, a binary genetic algorithm is adopted, namely structural parameters are characterized into a binary sequence, and an individual evaluation system based on an FOM (function of Merit) function is established. In the algorithm parameter setting, the population size is set to be 100, the probability of inter-population exchange is 0.9, the variation probability of an individual is 0.1, the iteration frequency is 100 times, and in the algorithm operation process, the average fitness value of the population is increased along with time and tends to be converged in about 60 generations, which also shows that the GA algorithm has good rapid convergence on the multivariate optimization problem.
The following is a specific application example
A quasi-periodic large-area high-temperature-resistant infrared heat radiator preparation and radiation spectrum test comprises the following steps:
step 1: growing metal chromium Cr on the substrate by electron beam evaporation, wherein the thickness of the metal chromium Cr is 150nm, and annealing for 2h at 200 ℃;
step 2: according to the result of genetic algorithm design, preparing a dielectric layer by electron beam evaporation, wherein the thicknesses from bottom to top are as follows in sequence: SiO 22104nm、Nb2O5450nm、SiO2367nm、Nb2O5461nm、SiO2505nm、Nb2O5445nm、SiO2530nm、Nb2O5400 nm; controlling the thickness of each layer of dielectric film through crystal control or light control; heating the substrate to 200 ℃ in the growth process, and annealing for 2h after growth;
and step 3: the reflection spectrum R of the prepared infrared heat radiator by using a Fourier infrared spectrometer has an absorption spectrum A which is 1-R, and the absorption of the spectrum at 3.6 mu m is equal to 1;
and 4, step 4: the prepared infrared heat emission period is heated on a high temperature heating table (such as 1000K) and tested for thermal radiation spectrum, and the thermal radiation spectrum at 3.6 μm (infrared heat radiator radiation rate black body radiation rate) is equal to about 1.
The embodiments described above are described to facilitate an understanding and use of the invention by those skilled in the art. It will be readily apparent to those skilled in the art that various modifications to these embodiments may be made, and the generic principles described herein may be applied to other embodiments without the use of the inventive faculty. Therefore, the present invention is not limited to the above embodiments, and those skilled in the art should make improvements and modifications within the scope of the present invention based on the disclosure of the present invention.

Claims (10)

1.一种准周期大面积耐高温的红外热辐射器，其特征在于，该红外热辐射器包括：1. a quasi-periodic large-area high-temperature-resistant infrared thermal radiator, characterized in that the infrared thermal radiator comprises: 热膨胀系数小的衬底(1)；A substrate (1) with a small thermal expansion coefficient; 具有耐高温且粘附性强的金属层(2)；a metal layer (2) with high temperature resistance and strong adhesion; 耐高温且在辐射波段吸收系数接近为0的介质层a(3)；The dielectric layer a (3) with high temperature resistance and absorption coefficient close to 0 in the radiation band; 耐高温且在辐射波段吸收系数接近为0的介质层b(4)；Dielectric layer b(4) with high temperature resistance and absorption coefficient close to 0 in the radiation band; 所述介质层a(3)与介质层b(4)交替设置多层，每层厚度为100-600nm。The dielectric layer a (3) and the dielectric layer b (4) are alternately provided with multiple layers, and the thickness of each layer is 100-600 nm. 2.根据权利要求1所述的一种准周期大面积耐高温的红外热辐射器，其特征在于，所述的衬底(1)为耐高温材质的衬底。2 . The quasi-periodic large-area high-temperature-resistant infrared heat radiator according to claim 1 , wherein the substrate ( 1 ) is a high-temperature-resistant material. 3 . 3.根据权利要求1所述的一种准周期大面积耐高温的红外热辐射器，其特征在于，所述金属层(2)为铬材质的金属层。3 . The quasi-periodic and large-area high-temperature resistant infrared heat radiator according to claim 1 , wherein the metal layer ( 2 ) is a metal layer made of chromium material. 4 . 4.根据权利要求3所述的一种准周期大面积耐高温的红外热辐射器，其特征在于，所述金属层(2)的厚度远大于辐射源向金属内传播的穿透深度。4. A quasi-periodic large-area high-temperature resistant infrared thermal radiator according to claim 3, characterized in that the thickness of the metal layer (2) is much larger than the penetration depth of the radiation source propagating into the metal. 5.根据权利要求3所述的一种准周期大面积耐高温的红外热辐射器，其特征在于，所述金属层(2)厚度为100-200nm。5 . The quasi-periodic large-area high-temperature-resistant infrared heat radiator according to claim 3 , wherein the metal layer ( 2 ) has a thickness of 100-200 nm. 6 . 6.根据权利要求1所述的一种准周期大面积耐高温的红外热辐射器，其特征在于，所述介质层a(3)为二氧化硅材质的介质层。6 . The quasi-periodic, large-area, high-temperature-resistant infrared heat radiator according to claim 1 , wherein the dielectric layer a ( 3 ) is a dielectric layer made of silicon dioxide. 7 . 7.根据权利要求6所述的一种准周期大面积耐高温的红外热辐射器，其特征在于，所述介质层b(4)为五氧化二铌材质的介质层。7 . The quasi-periodic, large-area, high-temperature-resistant infrared heat radiator according to claim 6 , wherein the dielectric layer b ( 4 ) is a dielectric layer made of niobium pentoxide. 8 . 8.根据权利要求6所述的一种准周期大面积耐高温的红外热辐射器，其特征在于，所述介质层a(3)与介质层b(4)依次交替设置6-10层。8 . The quasi-periodic and large-area high-temperature resistant infrared heat radiator according to claim 6 , wherein 6-10 layers of the dielectric layer a ( 3 ) and the dielectric layer b ( 4 ) are alternately arranged in sequence. 9 . 9.如权利要求1所述的一种准周期大面积耐高温的红外热辐射器的制备方法，其特征在于，包括如下步骤：9. the preparation method of a kind of quasi-periodic large-area high temperature resistant infrared thermal radiator as claimed in claim 1, is characterized in that, comprises the steps: 步骤1：在衬底上生长金属层，并使金属层膜厚远大于辐射源向金属内传播的穿透深度；Step 1: grow a metal layer on the substrate, and make the thickness of the metal layer much larger than the penetration depth of the radiation source propagating into the metal; 步骤2：根据遗传算法设计的结果制备介质层a与介质层b，通过晶控或者光控来控制各层介质薄膜的厚度；Step 2: Prepare the dielectric layer a and the dielectric layer b according to the result of the genetic algorithm design, and control the thickness of each layer of the dielectric thin film through crystal control or optical control; 步骤3：测试制备好的红外热辐射器的反射光谱R，其吸收光谱A＝1-R；Step 3: Test the reflection spectrum R of the prepared infrared thermal radiator, and its absorption spectrum A=1-R; 步骤4：制备好的红外热发射期间放在高温加热台上加热，测试其热辐射谱。Step 4: The prepared infrared heat emission is placed on a high temperature heating table for heating, and its thermal radiation spectrum is tested. 10.根据权利要求9所述的一种准周期大面积耐高温的红外热辐射器的制备方法，其特征在于，步骤1在衬底上通过采用磁控溅射、离子束溅射、电子束蒸发、热蒸发、脉冲激光沉积或原子层沉积生长金属层，200℃退火2h；10. The preparation method of a quasi-periodic large-area high-temperature-resistant infrared thermal radiator according to claim 9, wherein in step 1, magnetron sputtering, ion beam sputtering, electron beam sputtering, and electron beam sputtering are used on the substrate in step 1 Evaporation, thermal evaporation, pulsed laser deposition or atomic layer deposition to grow the metal layer, annealed at 200 ℃ for 2h; 步骤2生长过程中衬底加热200℃，生长结束退火2h。During the growth process of step 2, the substrate is heated at 200° C., and the growth is completed by annealing for 2 hours.
CN202111493941.XA 2021-12-08 2021-12-08 Quasi-periodic large-area high-temperature-resistant infrared heat radiator and preparation method thereof Pending CN114242561A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111493941.XA CN114242561A (en) 2021-12-08 2021-12-08 Quasi-periodic large-area high-temperature-resistant infrared heat radiator and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111493941.XA CN114242561A (en) 2021-12-08 2021-12-08 Quasi-periodic large-area high-temperature-resistant infrared heat radiator and preparation method thereof

Publications (1)

Publication Number Publication Date
CN114242561A true CN114242561A (en) 2022-03-25

Family

ID=80754030

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111493941.XA Pending CN114242561A (en) 2021-12-08 2021-12-08 Quasi-periodic large-area high-temperature-resistant infrared heat radiator and preparation method thereof

Country Status (1)

Country Link
CN (1) CN114242561A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115248469A (en) * 2022-07-11 2022-10-28 中国科学院上海技术物理研究所 A kind of long-wave infrared broadband absorption structure
CN115692532A (en) * 2022-11-10 2023-02-03 哈尔滨工业大学 Thermophotovoltaic system based on multilayer film selective emitter and preparation method thereof
CN118621264A (en) * 2024-06-06 2024-09-10 中山市有信新材料有限公司 A superhard composite film material and preparation method thereof
CN118868728A (en) * 2023-04-27 2024-10-29 比亚迪股份有限公司 Thermal emitter and its manufacturing method and application

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03107104A (en) * 1989-09-20 1991-05-07 Ise Shinku Kogaku Kk Heat ray absorptive reflecting mirror
US20090087936A1 (en) * 2006-09-29 2009-04-02 Showa Denko K.K. Deposition method of iii group nitride compound semiconductor laminated structure
CN204345956U (en) * 2014-11-14 2015-05-20 中国建筑材料科学研究总院 The continuously adjustable coating for selective absorption of sunlight spectrum of a kind of ABSORPTION EDGE
CN104976803A (en) * 2014-04-11 2015-10-14 太浩科技有限公司 Solar spectrum selective absorbing coating and preparation method thereof
CN104976802A (en) * 2014-04-11 2015-10-14 太浩科技有限公司 Solar spectrum selective absorptive coating and manufacturing method thereof
CN106768352A (en) * 2016-11-25 2017-05-31 中国科学院上海技术物理研究所 A kind of infrared narrow-band radiated source and preparation method thereof
CN112166487A (en) * 2018-05-25 2021-01-01 国立研究开发法人物质材料研究机构 Laminated radiation source

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03107104A (en) * 1989-09-20 1991-05-07 Ise Shinku Kogaku Kk Heat ray absorptive reflecting mirror
US20090087936A1 (en) * 2006-09-29 2009-04-02 Showa Denko K.K. Deposition method of iii group nitride compound semiconductor laminated structure
CN104976803A (en) * 2014-04-11 2015-10-14 太浩科技有限公司 Solar spectrum selective absorbing coating and preparation method thereof
CN104976802A (en) * 2014-04-11 2015-10-14 太浩科技有限公司 Solar spectrum selective absorptive coating and manufacturing method thereof
CN204345956U (en) * 2014-11-14 2015-05-20 中国建筑材料科学研究总院 The continuously adjustable coating for selective absorption of sunlight spectrum of a kind of ABSORPTION EDGE
CN106768352A (en) * 2016-11-25 2017-05-31 中国科学院上海技术物理研究所 A kind of infrared narrow-band radiated source and preparation method thereof
CN112166487A (en) * 2018-05-25 2021-01-01 国立研究开发法人物质材料研究机构 Laminated radiation source

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115248469A (en) * 2022-07-11 2022-10-28 中国科学院上海技术物理研究所 A kind of long-wave infrared broadband absorption structure
CN115248469B (en) * 2022-07-11 2023-09-12 中国科学院上海技术物理研究所 Long-wave infrared broadband absorption structure
CN115692532A (en) * 2022-11-10 2023-02-03 哈尔滨工业大学 Thermophotovoltaic system based on multilayer film selective emitter and preparation method thereof
CN115692532B (en) * 2022-11-10 2024-11-08 哈尔滨工业大学 Thermophotovoltaic system based on multilayer film selective emitter and preparation method thereof
CN118868728A (en) * 2023-04-27 2024-10-29 比亚迪股份有限公司 Thermal emitter and its manufacturing method and application
CN118621264A (en) * 2024-06-06 2024-09-10 中山市有信新材料有限公司 A superhard composite film material and preparation method thereof

Similar Documents

Publication Publication Date Title
CN114242561A (en) Quasi-periodic large-area high-temperature-resistant infrared heat radiator and preparation method thereof
CN106768352B (en) A kind of infrared narrow-band radiated source and preparation method thereof
JP6994274B2 (en) Stacked radiant light source
CN116088077A (en) A dual-wave dynamic thermal camouflage structure and its optimization method
CN111158069B (en) A kind of spectral selective radiation infrared stealth material and preparation method thereof
US9733404B2 (en) Layered structure for an infrared emitter, infrared emitter device and detector
CN111913329B (en) Electrochromic thin film device with adjustable optical properties in visible to mid-infrared band and preparation method
CN113917755B (en) Intelligent thermal control film
CN111562685A (en) Intelligent infrared light switch for infrared window material and manufacturing method
CN108878636A (en) A method of two-dimentional thermo-electric device is prepared based on two telluride molybdenums
US20170190611A1 (en) Material comprising a functional layer made from silver, crystallised on a nickel oxide layer
EP2995882B1 (en) Solar-thermal conversion member, solar-thermal conversion stack, solar-thermal conversion device, and solar-thermal power generating device
CN116909041A (en) Infrared phase change material couple with high-low dielectric imaginary part and preparation method thereof
CN113589415B (en) Ultra-wideband YAG laser reflection film and preparation method thereof
KR102133080B1 (en) Multi-layered thin film structure, thermal emitter and manufacturing method thereof
CN111208589A (en) A kind of high temperature resistant selective emission infrared stealth material and preparation method thereof
CN108220897B (en) Method for preparing vanadium dioxide thin film by magnetron sputtering at low temperature
CN112162405B (en) A resonant cavity film system with non-volatile, multi-structural color, multi-level and high transmittance contrast ratio and preparation method
CN214795268U (en) Perfect Broadband Absorber for Visible Light Based on Transition Metal Films
CN204290028U (en) Based on the practical saturable absorption device of two-dimensional layer material
CN120276177B (en) Modulator and its preparation method
CN118102514B (en) Graphene thermal radiator and preparation method thereof
Sarangan Design and nanophotonic thin film devices using phase change materials
CN114552382A (en) Reflective film structure and preparation method thereof
CN112813403B (en) Method for improving reflectivity of high reflective film of semiconductor laser and implementation device thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20220325