CN114242561A - A kind of quasi-periodic large-area high-temperature resistant infrared thermal radiator and preparation method thereof - Google Patents
A kind of quasi-periodic large-area high-temperature resistant infrared thermal radiator and preparation method thereof Download PDFInfo
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- H01K—ELECTRIC INCANDESCENT LAMPS
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Abstract
The invention discloses a quasi-periodic large-area high-temperature-resistant infrared heat radiator and a preparation method thereof, wherein the radiator is composed of a multilayer film structure and comprises a substrate, a metal layer, a medium a and a medium b, the thickness of the medium layer is obtained by optimizing a genetic algorithm, the thickness of each layer is 100-600nm, and the preparation method of a film system can adopt one or more combinations of magnetron sputtering, ion beam sputtering, electron beam evaporation, thermal evaporation, pulse laser deposition, atomic layer deposition and the like. The infrared radiator has the advantages of high radiance, the peak radiance is close to 100%, the structure is simple, the large-area preparation is easy, the wavelength can be regulated and controlled, the infrared radiator can be prepared on a flexible substrate, the infrared radiator can resist the high temperature of 1000K and the like, and the infrared radiator has good application prospect on an infrared light source, chemical molecular characteristic peak detection, infrared imaging, photoelectric characteristic identification and a novel infrared spectrometer.
Description
Technical Field
The invention relates to the field of functional materials, in particular to a quasi-periodic large-area high-temperature-resistant infrared heat radiator and a preparation method thereof.
Background
Since the improvement of the bulb, incandescent bulb has become one of the main light sources, and plays an indispensable role in human life. Light sources generally produce light by heating incandescent lamp materials to high temperatures, referred to as heat sources, and typically have a broadband emission spectrum and a quasi-isotropic emission behavior. However, heat radiators with narrow-band emission peaks and high orientation are of great interest in various applications, such as high efficiency infrared sensing, health detection, thermophotovoltaics, and the like. The infrared thermal radiation imaging technology plays a wide and huge role in the novel coronavirus epidemic situation. For a given sensing application, only a bandwidth of less than 50cm is required-1Because most common molecules have a unique and very narrow infrared response, which is related to their own molecular vibrations. The traditional infrared light source needs a light splitting system when forming a spectrometer, but the light splitting system of an infrared band has low efficiency, needs to occupy a large space and cannot meet the requirement of the miniaturization trend of the system. However, the micro-electro-mechanical system (MEMS) infrared narrow-band radiation source, the quantum cascade infrared laser, the infrared light emitting diode and other light sources can be miniaturized and integrated, and the problems that large-area preparation cost cannot be achieved and the like exist. The problem that a photonic crystal type thermal radiation infrared light source cannot be prepared in a large area and is high in cost is solved, but the structure generally has more layers and thicker thickness and has the defect of incapability of resisting high temperature. Therefore, the development of a miniature infrared heat radiator which is low in cost, excellent in performance, adjustable in wavelength and resistant to high temperature becomes a research hotspot in the field of infrared application.
Patent CN106768352A discloses an infrared narrow band radiation source and a method for preparing the same, the radiation source is composed of a multilayer film structure, including a metal layer, a dielectric cavity layer and a dielectric bragg reflector, the thickness of the dielectric cavity layer and the thickness of the dielectric bragg reflector can adjust the radiation center wavelength of the infrared narrow band radiation source, the method for preparing the film system can adopt one or more combinations of magnetron sputtering, ion beam sputtering, electron beam evaporation, thermal evaporation, pulsed laser deposition, atomic layer deposition, etc., however, the infrared narrow band radiation source disclosed in the patent has the following defects: (1) the metal substrate is made of gold, silver, copper, aluminum, tungsten, tantalum and rhenium metal materials which are poor in adhesion and easy to demould, and the gold, silver and other materials are not high in temperature resistance; (2) the material of the dielectric layer is germanium, silicon, zinc sulfide or silicon monoxide and the like, the germanium and the zinc sulfide are not high-temperature resistant, and the refractive index is greatly changed along with the increase of the temperature, so that the radiation peak can be deviated along with the increase of the temperature; (3) the heat radiation period is composed of a metal layer, a medium cavity layer and a medium Bragg reflector, the number of the medium Bragg reflector is at least 5, the number of the layers is large, and the thickness is thick. On the basis, the invention introduces a genetic algorithm to optimize the structural thickness of the radiator, selects a material with good high-temperature resistance and adhesiveness, and effectively solves the problems of high-temperature demoulding and peak position deviation along with temperature change.
Disclosure of Invention
Aiming at the problems of the traditional infrared light source, the invention provides a quasi-periodic large-area high-temperature-resistant infrared heat radiator and a preparation method thereof.
The purpose of the invention is realized by the following technical scheme:
a quasi-periodic large area high temperature resistant infrared heat radiator, comprising:
a substrate having a small thermal expansion coefficient;
the metal layer has high temperature resistance and strong adhesion;
the dielectric layer a is high-temperature resistant and has an absorption coefficient close to 0 in a radiation waveband;
the dielectric layer b is high-temperature resistant and has an absorption coefficient close to 0 in a radiation waveband;
the dielectric layers a and the dielectric layers b are sequentially and alternately arranged in a plurality of layers, and the thickness of each layer is 100-600 nm.
The working wavelength of the infrared narrow-band radiation source can cover short waves (1.1-3 mu m) and medium waves (3-6 mu m); the radiation emissivity epsilon can be as high as 100%. The infrared radiator has the advantages of high radiance, the peak radiance is close to 100%, the structure is simple, the large-area preparation is easy, the wavelength can be regulated and controlled, the infrared radiator can be prepared on a flexible substrate, the infrared radiator can resist the high temperature of 1000K and the like, and the infrared radiator has good application prospect on an infrared light source, chemical molecular characteristic peak detection, infrared imaging, photoelectric characteristic identification and a novel infrared spectrometer.
Further, the substrate is made of a high-temperature resistant material, and a flexible substrate can be adopted.
Further, the metal layer is made of chromium.
Further, the thickness of the metal layer is much greater than the penetration depth of the radiation source into the metal.
Further, the thickness of the metal layer is 100-200 nm.
Further, the dielectric layer a is a dielectric layer made of silicon dioxide.
Further, the dielectric layer b is a dielectric layer made of niobium pentoxide.
The metal layer can be chromium, and the thickness of the metal layer is far greater than the penetration depth of the radiation source to the metal; the medium a can be silicon dioxide, the medium b can be a semiconductor or compound material such as niobium pentoxide and the like with weak absorption property in a radiation wave band, the materials generally have high temperature resistance, and the refractive indexes of the two materials are greatly different.
Furthermore, the dielectric layers a and the dielectric layers b are sequentially and alternately arranged with 6-10 layers, and the thickness of each layer is 100-600 nm.
A preparation method of a quasi-periodic large-area high-temperature-resistant infrared heat radiator comprises the following steps:
step 1: growing a metal layer on the substrate by electron beam evaporation, wherein the thickness of the metal layer is far larger than the penetration depth of the radiation source to the metal;
step 2: preparing a dielectric layer a and a dielectric layer b according to the result of genetic algorithm design, and controlling the thickness of each layer of dielectric film through crystal control or light control;
and step 3: testing the reflection spectrum R of the prepared infrared heat radiator, wherein the absorption spectrum A is 1-R (wherein R is the reflectivity, and A is the absorptivity);
and 4, step 4: the prepared infrared heat emission period is placed on a high-temperature heating table for heating, and the heat radiation spectrum of the prepared infrared heat emission period is tested.
Step 1, growing a metal layer on a substrate, and annealing for 2 hours at 200 ℃; and 2, heating the substrate to 200 ℃ in the growth process of the step 2, and annealing for 2h after the growth is finished.
The prepared infrared heat radiator structure has a quasi-periodic thickness of sub-wavelength, can resist the high temperature of 1000K, and the refractive index of the medium b is larger than that of the medium a.
The method of the invention makes up the defects of thicker integral thickness, no high temperature resistance and the like of the traditional infrared radiator, and realizes the infrared radiator which has quasi-period of short wave (1.1-3 mu m) and medium wave (3-6 mu m), can be prepared in large area, has the characteristics of high temperature resistance and the like. The infrared radiator structure designed based on the genetic algorithm is a quasiperiodic structure, the thickness is a sub-wavelength, and the infrared radiator can be prepared in a large area.
Compared with the prior art, the invention has the following beneficial effects:
because the metal layer is selected, the chromium has better adhesiveness and high-temperature resistance; the material of the dielectric layer is selected, and both the silicon oxide and the niobium oxide have better high-temperature resistance; the thickness is optimized and determined through a genetic algorithm, the thickness is thin in the whole period, the number of layers is small, the preparation of a heat radiation device is facilitated, and the device has the high-temperature resistance characteristic.
1. The structure of the infrared heat radiator is optimized by a genetic algorithm, and the whole thickness of the structure is a quasiperiodic structure and is thinner and has a sub-wavelength.
2. The infrared heat radiator of the invention is a quasi-periodic film system structure system, and can be prepared in large area.
3. The infrared heat radiator can resist the high temperature of 1000K.
Drawings
FIG. 1 is a schematic diagram of a quasi-periodic large-area high-temperature-resistant infrared heat radiator according to the present invention;
reference numerals: 1-substrate, 2-metal layer, 3-dielectric a, 4-dielectric b.
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
As shown in fig. 1, a structure diagram of a quasi-periodic large-area high-temperature-resistant infrared heat radiator: comprises a substrate 1, a metal layer (e.g. Cr)2, and a medium a (e.g. SiO)2)3 medium b (e.g. Nb)2O5)4, wherein, a) the substrate has a low coefficient of thermal expansion; b) the metal chromium Cr is high temperature resistant and has strong adhesion; c) dielectric material SiO2And Nb2O5The material is high temperature resistant, the absorption coefficient of the material in the middle infrared band is close to 0, the refractive index is less along with the temperature change, and the thermal expansion coefficient is less.
The preparation and radiation spectrum test of the infrared heat radiator comprise the following steps:
step 1: growing a metal layer on the substrate through electron beam evaporation, and annealing at 200 ℃ for 2 h; in order to make the transmittance of the film system zero, the film thickness of the metal layer is far greater than the penetration depth of the radiation source to the metal, and the metal film has high reverse effect of infrared broadband;
step 2: preparing a dielectric layer according to a result of genetic algorithm design; controlling the thickness of each layer of dielectric film through crystal control or light control; heating the substrate to 200 ℃ in the growth process, and annealing for 2h after growth;
and step 3: testing the reflection spectrum R of the prepared infrared heat radiator, wherein the absorption spectrum A is 1-R;
and 4, step 4: the prepared infrared thermal emission is heated on a high temperature heating table (such as 1000K) during the preparation process, and the thermal radiation spectrum is tested.
Wherein, the genetic algorithm in the step 2 specifically comprises the following steps: an intelligent algorithm for optimizing multivariable problems utilizes an evolutionary theory proposed by Darwin as a concept, randomly generated individuals are evaluated through a self-defined evaluation system, and individuals with relatively later scores are eliminated in each iteration, so that the optimization purpose is realized. After a certain number of iterations, the algorithm converges and the variable value corresponding to the optimal solution is obtained.
In the process of optimizing and realizing the infrared heat radiator, in order to better describe the evolution and population propagation characteristics of a genetic algorithm, a binary genetic algorithm is adopted, namely structural parameters are characterized into a binary sequence, and an individual evaluation system based on an FOM (function of Merit) function is established. In the algorithm parameter setting, the population size is set to be 100, the probability of inter-population exchange is 0.9, the variation probability of an individual is 0.1, the iteration frequency is 100 times, and in the algorithm operation process, the average fitness value of the population is increased along with time and tends to be converged in about 60 generations, which also shows that the GA algorithm has good rapid convergence on the multivariate optimization problem.
The following is a specific application example
A quasi-periodic large-area high-temperature-resistant infrared heat radiator preparation and radiation spectrum test comprises the following steps:
step 1: growing metal chromium Cr on the substrate by electron beam evaporation, wherein the thickness of the metal chromium Cr is 150nm, and annealing for 2h at 200 ℃;
step 2: according to the result of genetic algorithm design, preparing a dielectric layer by electron beam evaporation, wherein the thicknesses from bottom to top are as follows in sequence: SiO 22104nm、Nb2O5450nm、SiO2367nm、Nb2O5461nm、SiO2505nm、Nb2O5445nm、SiO2530nm、Nb2O5400 nm; controlling the thickness of each layer of dielectric film through crystal control or light control; heating the substrate to 200 ℃ in the growth process, and annealing for 2h after growth;
and step 3: the reflection spectrum R of the prepared infrared heat radiator by using a Fourier infrared spectrometer has an absorption spectrum A which is 1-R, and the absorption of the spectrum at 3.6 mu m is equal to 1;
and 4, step 4: the prepared infrared heat emission period is heated on a high temperature heating table (such as 1000K) and tested for thermal radiation spectrum, and the thermal radiation spectrum at 3.6 μm (infrared heat radiator radiation rate black body radiation rate) is equal to about 1.
The embodiments described above are described to facilitate an understanding and use of the invention by those skilled in the art. It will be readily apparent to those skilled in the art that various modifications to these embodiments may be made, and the generic principles described herein may be applied to other embodiments without the use of the inventive faculty. Therefore, the present invention is not limited to the above embodiments, and those skilled in the art should make improvements and modifications within the scope of the present invention based on the disclosure of the present invention.
Claims (10)
1. A quasi-periodic large area high temperature resistant infrared heat radiator, comprising:
a substrate (1) having a small thermal expansion coefficient;
a metal layer (2) having high temperature resistance and strong adhesion;
the dielectric layer a (3) is high-temperature resistant and has an absorption coefficient close to 0 in a radiation waveband;
a dielectric layer b (4) which is resistant to high temperature and has an absorption coefficient close to 0 in a radiation waveband;
the dielectric layers a (3) and the dielectric layers b (4) are alternately arranged in a plurality of layers, and the thickness of each layer is 100-600 nm.
2. A quasi-periodic large area high temperature infrared heat radiator according to claim 1, characterized in that the substrate (1) is a high temperature resistant substrate.
3. A quasi-periodic large area high temperature infrared heat radiator according to claim 1, characterized in that the metal layer (2) is a chromium metal layer.
4. A quasi-periodic large area high temperature infrared heat radiator according to claim 3, characterized in that the thickness of the metal layer (2) is much larger than the penetration depth of the radiation source into the metal.
5. The infrared heat radiator of claim 3, characterized in that the thickness of the metal layer (2) is 100-200 nm.
6. The infrared heat radiator of claim 1, characterized in that the dielectric layer a (3) is made of silicon dioxide.
7. The infrared heat radiator of claim 6, characterized in that the dielectric layer b (4) is made of niobium pentoxide.
8. The infrared heat radiator of claim 6, characterized in that the dielectric layers a (3) and b (4) are alternately arranged in 6-10 layers.
9. The method of claim 1, wherein the method comprises the steps of:
step 1: growing a metal layer on the substrate, wherein the thickness of the metal layer is far larger than the penetration depth of the radiation source to the metal;
step 2: preparing a dielectric layer a and a dielectric layer b according to the result of genetic algorithm design, and controlling the thickness of each layer of dielectric film through crystal control or light control;
and step 3: testing the reflection spectrum R of the prepared infrared heat radiator, wherein the absorption spectrum A is 1-R;
and 4, step 4: the prepared infrared heat emission period is placed on a high-temperature heating table for heating, and the heat radiation spectrum of the prepared infrared heat emission period is tested.
10. The method for preparing a quasi-periodic large-area high-temperature-resistant infrared heat radiator as claimed in claim 9, wherein step 1 is carried out by growing a metal layer on a substrate by magnetron sputtering, ion beam sputtering, electron beam evaporation, thermal evaporation, pulsed laser deposition or atomic layer deposition, and annealing at 200 ℃ for 2 h;
and 2, heating the substrate to 200 ℃ in the growth process of the step 2, and annealing for 2h after the growth is finished.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115248469A (en) * | 2022-07-11 | 2022-10-28 | 中国科学院上海技术物理研究所 | A kind of long-wave infrared broadband absorption structure |
| CN115692532A (en) * | 2022-11-10 | 2023-02-03 | 哈尔滨工业大学 | Thermophotovoltaic system based on multilayer film selective emitter and preparation method thereof |
| CN118621264A (en) * | 2024-06-06 | 2024-09-10 | 中山市有信新材料有限公司 | A superhard composite film material and preparation method thereof |
| CN118868728A (en) * | 2023-04-27 | 2024-10-29 | 比亚迪股份有限公司 | Thermal emitter and its manufacturing method and application |
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| CN118621264A (en) * | 2024-06-06 | 2024-09-10 | 中山市有信新材料有限公司 | A superhard composite film material and preparation method thereof |
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