CN114542425A - Semiconductor processing technology, vacuumizing device and semiconductor processing equipment - Google Patents

Semiconductor processing technology, vacuumizing device and semiconductor processing equipment Download PDF

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Publication number
CN114542425A
CN114542425A CN202011344666.0A CN202011344666A CN114542425A CN 114542425 A CN114542425 A CN 114542425A CN 202011344666 A CN202011344666 A CN 202011344666A CN 114542425 A CN114542425 A CN 114542425A
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vacuum pump
heating
pump body
process chamber
semiconductor processing
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Inventor
徐范植
高建峰
丁云凌
杨涛
李俊峰
王文武
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Institute of Microelectronics of CAS
Zhenxin Beijing Semiconductor Co Ltd
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Institute of Microelectronics of CAS
Zhenxin Beijing Semiconductor Co Ltd
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Priority to CN202011344666.0A priority Critical patent/CN114542425A/en
Publication of CN114542425A publication Critical patent/CN114542425A/en
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
    • F04B37/10—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use
    • F04B37/14—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use to obtain high vacuum
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B39/00—Component parts, details, or accessories, of pumps or pumping systems specially adapted for elastic fluids, not otherwise provided for in, or of interest apart from, groups F04B25/00 - F04B37/00
    • F04B39/06—Cooling; Heating; Prevention of freezing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Applications Or Details Of Rotary Compressors (AREA)

Abstract

本发明公开了一种半导体加工工艺、抽真空装置和半导体工艺设备，应用于半导体领域，包括：真空泵本体和加热装置，加热装置包括：外部电源，设置于真空泵本体外；充电板，设置于真空泵本体内，通过外部电源对充电板进行充电；发热结构，设置于真空泵本体的电机转子上，且发热结构与充电板连接，充电板用于提供使发热结构发热的电源输入。通过本发明抑制了副产物在泵内沉积。

Figure 202011344666

The invention discloses a semiconductor processing process, a vacuum pumping device and semiconductor process equipment, which are applied to the semiconductor field and include a vacuum pump body and a heating device. The heating device includes: an external power supply, which is arranged outside the vacuum pump body; and a charging board, which is arranged on the vacuum pump. In the body, the charging board is charged by an external power supply; the heating structure is arranged on the motor rotor of the vacuum pump body, and the heating structure is connected with the charging board, and the charging board is used to provide the power input for heating the heating structure. By-product deposition in the pump is suppressed by the present invention.

Figure 202011344666

Description

Semiconductor processing technology, vacuumizing device and semiconductor processing equipment
Technical Field
The invention relates to the field of semiconductors, in particular to a semiconductor processing technology, a vacuumizing device and semiconductor processing equipment.
Background
Recently, as the use of information media has increased, the demand for semiconductor memory devices has also increased greatly. The equipment for producing the semiconductor products is stable in operation, and the requirements on batch production of high-quality products and the like are provided. In order to ensure the quality of products, a process chamber in which a semiconductor process is performed should be maintained at a certain pressure.
In order to maintain a constant pressure in the process chamber of the semiconductor processing apparatus, it is necessary to keep the ability of the pump to generate a vacuum stable. However, by-products generated by reactions occurring in the process chamber may be deposited in the pump, which may degrade the performance of the vacuum pump. This can cause the chamber pressure to become unstable and result in poor film quality.
Disclosure of Invention
In view of the above problems in the prior art, embodiments of the present invention provide a semiconductor processing technology, a vacuum pumping device and a semiconductor processing apparatus.
In a first aspect, an embodiment of the present invention provides an evacuation apparatus applied to a semiconductor process, including a vacuum pump body and a heating apparatus, where the heating apparatus includes:
the external power supply is arranged outside the vacuum pump body;
the charging plate is arranged in the vacuum pump body and is charged by the external power supply;
the heating structure is arranged in the vacuum pump body, connected with the charging plate and used for providing power input for heating the heating structure.
Optionally, the apparatus further comprises:
and the temperature controller is arranged in the vacuum pump body and used for controlling the heating temperature of the heating structure.
Optionally, the temperature controller is used for controlling the heating temperature of the heating structure within a range of 80-250 ℃.
Optionally, the charging plate is specifically: and the wireless charging panel is wirelessly connected with the external power supply.
Optionally, the heat generating structure is disposed on a motor rotor of the vacuum pump body.
Optionally, the heating structure is specifically: a heating coil surrounding the motor rotor, or
The heating structure specifically comprises: and the heating sheet or the heating wire extends along the length direction of the motor rotor.
In a second aspect, an embodiment of the present invention provides a semiconductor processing apparatus, including: a main body device and the vacuum-pumping device according to any one of the implementation manners of the first aspect;
the main body equipment comprises a process cavity, and the vacuumizing device is used for vacuumizing the process cavity to form a constant vacuum degree in the process cavity.
In a third aspect, an embodiment of the present invention provides a semiconductor processing method performed by the semiconductor processing apparatus according to the second aspect, including:
when a target processing technology is carried out on a wafer in a process cavity of main body equipment, vacuumizing the process cavity through the vacuum pump body; and in the process of vacuumizing the vacuum pump body, the motor rotor of the vacuum pump body is synchronously heated by the heating device.
Optionally, when the target processing process is performed on the wafer in the process chamber of the main body device, the vacuum pumping is performed on the process chamber through the vacuum pump body, and the method includes:
and when the wafer is subjected to deposition treatment or etching treatment in the process cavity, vacuumizing the process cavity through the vacuum pump body.
Optionally, heating the motor rotor of the vacuum pump body by the heating device includes:
and heating the motor rotor of the vacuum pump body to 80-250 ℃ through the heating device.
One or more technical solutions provided by the embodiments of the present invention at least achieve the following technical effects or advantages:
through this internal heating device that sets up of vacuum pump directly produces the heat, make the inside temperature rise of pump to the by-product that prevents the process chamber and the accumulation on motor rotor in the vacuum pump, then can prevent that the by-product from gathering and leading to the vacuum performance of vacuum pump body to descend, thereby kept the ability invariant that the vacuum pump body produced the vacuum, just also can guarantee that process chamber internal pressure keeps invariable, and then the technology stability of going on in the assurance process chamber, in order to prevent the product defect that the technology unstability leads to.
And, by controlling the accumulation of the by-products in the vacuum pump and on the motor rotor, the automatic pump stop of the vacuum pump body can be prevented to reduce power consumption and extend the life cycle of the pump.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an evacuation device in an embodiment of the present invention.
In fig. 1, 1 is a vacuum pump body, 2 is an external power supply, 3 is a charging plate, 4 is a heat generating structure, and 5 is a temperature controller.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The embodiments of the present invention and the technical features in the embodiments may be combined with each other without conflict. All other embodiments, which can be obtained by a person skilled in the art based on the embodiments of the present invention without any creative work, fall within the protection scope of the present invention.
In a first aspect, an embodiment of the present invention provides an evacuation apparatus applied to a semiconductor process, and referring to fig. 1, the evacuation apparatus includes a vacuum pump body 1 and a heating apparatus, where the heating apparatus includes: the external power supply 2 is arranged outside the vacuum pump body 1; the charging plate 3 is arranged in the vacuum pump body 1, and the charging plate 3 is charged by the external power supply 2; the heating structure 4 is arranged in the vacuum pump body 1, the heating structure 4 is connected with the charging plate 3, and power input for heating the heating structure 4 is provided through the charging plate 3.
In order to accurately control the heat generation temperature of the heat generation structure 4, the temperature for heating the inside of the vacuum pump body 1 is then accurately controlled. The vacuum-pumping device provided by the embodiment of the invention further comprises: and the temperature controller 5 is arranged in the vacuum pump body 1 and used for controlling the heating temperature of the heating structure 4.
Specifically, the heating temperature of the heating structure 4 is controlled within the range of 80-250 ℃ by the temperature controller 5. Or the heating temperature of the heating structure 4 is controlled by the temperature controller 5 to be maintained above 100 ℃.
Specifically, the charging plate 3 in the embodiment of the present invention specifically uses a wireless charging plate, and the wireless charging plate is wirelessly connected to the external power supply 2, so that the external power supply 2 wirelessly charges the charging plate 3 disposed in the vacuum pump body 1.
Specifically, the charging plate 3 may be disposed at an end position in the vacuum pump body 1 and sleeved on the motor rotor 11, so as to reasonably place the charging plate 3 in the vacuum pump body 1.
Further, for the wireless charging effect, the external power source 2 is disposed at an end of the vacuum pump body 1, and the wireless charging pad is disposed at the same end of the vacuum pump body 1.
For example, the external power supply 2 may be a power supply for supplying power to the motor of the vacuum pump body 1, or a newly added power supply different from the power supply for supplying power to the motor of the vacuum pump body 1.
The heating structure 4 in the embodiment of the present invention may be a heating coil or a heating sheet, so as to ensure that the motor rotor 11 is heated integrally. If the heat-generating structure 4 is a heat-generating coil, the heat coil is wound around the motor rotor 11. If the heat generating structure 4 is a heat generating sheet, the heat generating sheet extends along the motor rotor 11.
In a second aspect, based on the same inventive concept, an embodiment of the present invention provides a semiconductor processing apparatus, including a main body apparatus and the vacuum pumping device described in the foregoing embodiment, wherein the main body apparatus includes a process chamber, and the vacuum pumping device is configured to vacuum the process chamber of the main body apparatus to form a constant vacuum degree in the process chamber.
Specifically, the air inlet 12 of the vacuum pump body 1 of the vacuum pumping device is connected with the process chamber of the main body equipment so as to vacuumize the process chamber. The structure of the vacuum pumping device has been described in detail in the embodiment of the first aspect, and is not described herein again for the sake of brevity of the description. In particular, the main body equipment can be equipment for carrying out deposition processing or etching processing on the wafer.
In a third aspect, based on the same inventive concept, embodiments of the present invention provide a semiconductor processing method, which performs semiconductor processing based on the semiconductor processing apparatus of the second aspect. The semiconductor processing method comprises the following steps: when a target treatment process is carried out on the wafer in the process cavity, the vacuum pump body 1 is used for carrying out vacuum pumping treatment on the process cavity of the main body equipment; in the process of vacuumizing the vacuum pump body 1, the motor rotor 11 of the vacuum pump body 1 is heated by the heating device. Specifically, when the deposition treatment or the etching treatment is performed on the wafer in the process chamber, the process chamber is vacuumized through the vacuum pump body 1 to form a constant vacuum degree in the process chamber. Specifically, the motor rotor 11 of the vacuum pump body 1 is heated to 80-250 ℃ by the heating device.
According to one or more technical schemes provided by the embodiment of the invention, the heating device is arranged in the vacuum pump body to directly generate heat, so that the temperature in the vacuum pump is increased, the accumulation of byproducts generated in the process cavity in the vacuum pump and on the motor rotor is prevented, the decrease of the vacuum performance of the vacuum pump body caused by the accumulation of the byproducts can be prevented, the capability of the vacuum pump body for generating vacuum is kept constant, the pressure in the process cavity can be kept constant, the stability of the process performed in the process cavity is further ensured, and the product defect caused by the unstable process is prevented. And, by controlling the accumulation of the by-products in the vacuum pump and on the motor rotor, the automatic pump stop of the vacuum pump body can be prevented to reduce power consumption and extend the life cycle of the pump.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (10)

1.一种应用于半导体工艺的抽真空装置，其特征在于，包括真空泵本体和加热装置，其中，所述加热装置包括：1. A vacuuming device applied to a semiconductor process, characterized in that, comprising a vacuum pump body and a heating device, wherein the heating device comprises: 外部电源，设置于所述真空泵本体外；an external power supply, arranged outside the vacuum pump body; 充电板，设置于所述真空泵本体内，通过所述外部电源对所述充电板进行充电；a charging board, which is arranged in the vacuum pump body, and charges the charging board through the external power supply; 发热结构，设置于所述真空泵本体内，且所述发热结构与所述充电板连接，通过所述充电板提供使所述发热结构发热的电源输入。The heating structure is arranged in the vacuum pump body, and the heating structure is connected with the charging board, and the power input for making the heating structure generate heat is provided through the charging board. 2.如权利要求1所述的抽真空装置，其特征在于，还包括：2. The vacuuming device of claim 1, further comprising: 温度控制器，设置于所述真空泵本体内，用于控制所述发热结构的发热温度。The temperature controller is arranged in the vacuum pump body, and is used for controlling the heating temperature of the heating structure. 3.如权利要求1所述的抽真空装置，其特征在于，所述温度控制器用于控制所述发热结构的发热温度在80～250℃范围内。3 . The vacuuming device according to claim 1 , wherein the temperature controller is used to control the heating temperature of the heating structure to be in the range of 80-250° C. 4 . 4.如权利要求1所述的抽真空装置，其特征在于，所述充电板具体为：与所述外部电源之间无线连接的无线充电板。4 . The vacuuming device according to claim 1 , wherein the charging board is specifically: a wireless charging board that is wirelessly connected to the external power source. 5 . 5.如权利要求1所述的抽真空装置，其特征在于，所述发热结构设置于所述真空泵本体的电机转子上。5 . The vacuuming device according to claim 1 , wherein the heating structure is arranged on the motor rotor of the vacuum pump body. 6 . 6.如权利要求5所述的抽真空装置，其特征在于，所述发热结构具体为：6. The vacuuming device according to claim 5, wherein the heating structure is specifically: 发热线圈，所述发热线圈环绕在所述电机转子上，或者a heating coil that wraps around the motor rotor, or 发热片或者发热丝，沿着所述电机转子的长度方向延伸。The heating sheet or heating wire extends along the length direction of the motor rotor. 7.一种半导体工艺设备，包括：主体设备以及如权利要求1-6中任一所述的抽真空装置；7. A semiconductor process equipment, comprising: a main body equipment and the vacuuming device according to any one of claims 1-6; 其中，所述主体设备包括工艺腔，所述抽真空装置用于对所述工艺腔内抽真空，以形成所述工艺腔内的恒定真空度。Wherein, the main equipment includes a process chamber, and the vacuuming device is used for evacuating the process chamber to form a constant vacuum degree in the process chamber. 8.一种基于权利要求7所述半导体工艺设备进行的半导体加工方法，其特征在于，包括：8. A semiconductor processing method based on the semiconductor processing equipment of claim 7, characterized in that, comprising: 在主体设备的工艺腔内对晶圆进行目标加工工艺时，通过所述真空泵本体对所述工艺腔内进行抽真空；并在所述真空泵本体进行抽真空过程中，同步通过所述加热装置对所述真空泵本体的电机转子进行加热。When the target processing process is performed on the wafer in the process chamber of the main equipment, the vacuum pump body is used to evacuate the process chamber; The motor rotor of the vacuum pump body is heated. 9.如权利要求8所述的半导体加工方法，其特征在于，所述在主体设备的工艺腔内对晶圆进行目标加工工艺时，通过所述真空泵本体对所述工艺腔内进行抽真空，包括：9 . The semiconductor processing method according to claim 8 , wherein when the target processing process is performed on the wafer in the process chamber of the main equipment, the vacuum pump body is used to evacuate the process chamber, 10 . include: 在所述工艺腔内对所述晶圆进行沉积处理或者刻蚀处理时，通过所述真空泵本体对所述工艺腔内进行抽真空。When the wafer is deposited or etched in the process chamber, the process chamber is evacuated by the vacuum pump body. 10.如权利要求8或9所述的半导体加工工艺，其特征在于，通过所述加热装置对所述真空泵本体的电机转子进行加热，包括：10. The semiconductor processing process according to claim 8 or 9, wherein heating the motor rotor of the vacuum pump body by the heating device comprises: 通过所述加热装置将所述真空泵本体的电机转子加热至80～250℃。The motor rotor of the vacuum pump body is heated to 80-250°C by the heating device.
CN202011344666.0A 2020-11-26 2020-11-26 Semiconductor processing technology, vacuumizing device and semiconductor processing equipment Pending CN114542425A (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6126425A (en) * 1997-05-22 2000-10-03 T. D. Engineering Co., Ltd. Positive displacement pump
JP2003297762A (en) * 2002-04-03 2003-10-17 Hitachi Ltd Method for manufacturing semiconductor integrated circuit device
CN1656316A (en) * 2002-05-20 2005-08-17 Ts株式会社 Vacuum pump
JP2009097341A (en) * 2007-10-12 2009-05-07 Nabtesco Corp Vacuum pump and control method thereof
JP2014141925A (en) * 2013-01-24 2014-08-07 Ebara Corp Vacuum pump device and operation method of the same
JP2016118100A (en) * 2014-12-18 2016-06-30 株式会社荏原製作所 Dry vacuum pump and manufacturing method of dry vacuum pump
US20200105509A1 (en) * 2018-09-28 2020-04-02 Lam Research Corporation Vacuum pump protection against deposition byproduct buildup

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6126425A (en) * 1997-05-22 2000-10-03 T. D. Engineering Co., Ltd. Positive displacement pump
JP2003297762A (en) * 2002-04-03 2003-10-17 Hitachi Ltd Method for manufacturing semiconductor integrated circuit device
CN1656316A (en) * 2002-05-20 2005-08-17 Ts株式会社 Vacuum pump
JP2009097341A (en) * 2007-10-12 2009-05-07 Nabtesco Corp Vacuum pump and control method thereof
JP2014141925A (en) * 2013-01-24 2014-08-07 Ebara Corp Vacuum pump device and operation method of the same
JP2016118100A (en) * 2014-12-18 2016-06-30 株式会社荏原製作所 Dry vacuum pump and manufacturing method of dry vacuum pump
US20200105509A1 (en) * 2018-09-28 2020-04-02 Lam Research Corporation Vacuum pump protection against deposition byproduct buildup

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