CN114709131B - Angle control method in semiconductor metal stripping process - Google Patents
Angle control method in semiconductor metal stripping process Download PDFInfo
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- CN114709131B CN114709131B CN202210627301.1A CN202210627301A CN114709131B CN 114709131 B CN114709131 B CN 114709131B CN 202210627301 A CN202210627301 A CN 202210627301A CN 114709131 B CN114709131 B CN 114709131B
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Abstract
本发明公开了一种半导体金属剥离工艺中的角度控制方法，涉及半导体技术领域，方法包括：在基片表面沉积二氧化硅；在二氧化硅表面涂布正性光刻胶；在正性光刻胶表面遮挡图形化掩膜版后，对正性光刻胶进行曝光；对正性光刻胶进行显影，去掉曝光部分的正性光刻胶；采用湿法刻蚀对二氧化硅层进行刻蚀，使二氧化硅层形成与光刻胶层同样的刻蚀图形；向所得器件表面沉积金属层；剥离器件表面的二氧化硅层、正性光刻胶层及正性光刻胶层表面的金属层。本发明采取二氧化硅取代LOR光刻胶，配合特定的刻蚀方法，在大幅度降低生产成本的同时，减少投影沉积副作用，最终可形成沉积金属侧面角度超30°的高质量产品。
The invention discloses an angle control method in a semiconductor metal stripping process, and relates to the technical field of semiconductors. The method includes: depositing silicon dioxide on the surface of a substrate; coating a positive photoresist on the surface of the silicon dioxide; After the resist surface covers the patterned mask, the positive photoresist is exposed; the positive photoresist is developed to remove the positive photoresist in the exposed part; the silicon dioxide layer is subjected to wet etching. Etch, so that the silicon dioxide layer forms the same etching pattern as the photoresist layer; deposit a metal layer on the surface of the obtained device; peel off the silicon dioxide layer, the positive photoresist layer and the positive photoresist layer on the surface of the device metal layer on the surface. The invention adopts silicon dioxide to replace LOR photoresist, and cooperates with a specific etching method to greatly reduce the production cost, reduce the side effects of projection deposition, and finally form a high-quality product with a side angle of the deposited metal exceeding 30°.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an angle control method in a semiconductor metal stripping process.
Background
The conventional photolithography process in the semiconductor manufacturing industry generally comprises the following steps: firstly, film forming is carried out, then the photoresist coated on the substrate is subjected to patterned exposure, the exposed photoresist is removed by development, then etching is carried out, and finally the residual photoresist is stripped off, and the residual photoresist is the required film forming pattern remained on the substrate. The conventional Lift-Off process generally comprises the following steps: firstly, the photoresist coated on the substrate is exposed in a patterning way, the exposed photoresist is removed through development, then the film is formed, finally, the residual photoresist and the film formed on the photoresist are stripped together, and the residual photoresist on the substrate is the needed film forming pattern. In the current semiconductor manufacturing industry, especially in the manufacturing process of MEMS (Micro-Electro-Mechanical systems, Micro Electro Mechanical systems) sensors, a Lift-Off process becomes more and more popular, and the main reasons include that the Lift-Off process can theoretically omit an etching step, reduce the cost, and can realize the construction of some special pattern structures, such as cantilever beams, cavities and other structures, by using the Lift-Off process. The Lift off process is that after the substrate is coated with photoresist, exposed and developed, the photoresist film with certain pattern is used as mask to deposit and sputter the required metal, and the photoresist is removed while the metal on the film is stripped off, so that only the metal with the original pattern is left on the substrate.
In the current Lift off (metal stripping) process, an LOR photoresist special for the Lift off process is adopted to specially manufacture an undercut (undercut) so as to avoid that metal is completely attached to the photoresist for deposition, so that when the photoresist is cleaned in the subsequent Lift off process, the metal attached photoresist area is torn, and deposited metal of a part needing to be reserved is pulled up. However, due to the retraction, it is necessary to cause defects in the projected deposition, and the effect of the zone metal smearing occurs, and the shorter this smearing is, the better the side metal boundary angle is, the closer it is to 90 °. The traditional process has the problems that the LOR needs to be relatively thin correspondingly because the thickness of deposited metal needing to be reserved is thin, the process difficulty of the thinner LOR photoresist is increased, the market price is increased by multiple times, for example, the price of the photoresist with the thickness of 300nm of LOR is about 15000 RMB per liter, and the price of the photoresist with the thickness of 200nm of LOR is 32000 RMB per liter. In addition to the price problem, there is a serious technical barrier, LOR is to use organic lotion to perform wet etching process to shrink it inward, and the organic lotion will slightly erode the positive photoresist, resulting in an obvious bell mouth shape at the opening, thus amplifying the side effect of projection deposition, causing the metal deposition to be trailing seriously, and the angle will often be less than 10 °. The application requirements of composite production are difficult.
Disclosure of Invention
The invention relates to a processing method for a semiconductor filter Lift off process when special requirements are made on a pattern angle and special control is needed.
In order to solve the problems, the invention provides an angle control method in a semiconductor Lift off process, which is easy to operate, low in cost and small in defect, by replacing a high-price LOR photoresist with a low-cost substance and improving an organic solvent formula adopted in an internal shrinkage step, and the specific scheme is as follows:
an angle control method in a semiconductor Lift off process comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the positive photoresist at the exposed part;
s5, etching the silicon dioxide layer of the obtained device by wet etching to form an etching pattern which is the same as the photoresist layer on the silicon dioxide layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer.
Preferably, S1 is carried out on the silicon dioxide deposition at the temperature of 250-330 ℃, Ar (argon) is introduced, the flow rate is 800-1000sccm, and the working pressure is 0.2-0.3 Pa;
preferably, the silicon dioxide deposition in S1 is followed by a programmed heating treatment.
Preferably, the above-mentioned programmed heating treatment comprises: 300 ℃ for 10s, 550 ℃ for 10s, and 400 ℃ for 10 s.
Preferably, the silicon dioxide deposition thickness of S1 is 60-300 nm.
Preferably, the positive photoresist of S2 is coated to a thickness of 0.7-5 μm.
Preferably, S3 further comprises heating at 100 ℃ for 30S after exposure.
Preferably, the exposure of S3 is carried out for 30-60S, the wavelength of the UV light is 300-400nm, and the power is 12-17mW/cm 2 。
Preferably, the developing at S4 includes developing in a developer solution by spin-on immersion: spraying excessive developing solution on the surface of the positive photoresist to enable the developing solution to be fully distributed on the surface of the whole positive photoresist, and standing for 90s to enable the positive photoresist in the positive photoresist dissoluble area to be dissolved; continuously spraying the developing solution and simultaneously rotating the device at a speed of 50rpm/min for 30 s; continuously spraying excessive developing solution to make the developing solution fully spread on the surface of the whole positive photoresist, standing for 60s, and rotating the device at the speed of 100rpm/min to throw out the developing solution dissolved with the positive photoresist and the redundant developing solution; and spraying deionized water to the positive photoresist, rotating the device at the speed of 100rpm/min for spin-drying, and repeatedly spraying deionized water and spin-drying for 2 times to clean the device.
Preferably, S4 further comprises heating at 130 ℃ for 30S after development.
Preferably, the developing solution may be a commercially available positive photoresist developing solution. Further preferably, the developer solution is selected from positive photoresist developer solutions comprising one or both of tetramethylammonium hydroxide, sodium hydroxide.
Preferably, the wet etching is performed in S5, and the etching solution includes a hydrofluoric acid solution.
Preferably, the hydrofluoric acid solution of S5 comprises deionized water and hydrofluoric acid, and the volume ratio of the deionized water to the hydrofluoric acid is (10-12): 1.
Preferably, the etching of S5 includes: immersing the obtained device in hydrofluoric acid solution, standing for 30-60min, performing ultrasound for 2-5min, and repeating the standing and ultrasound steps for 3-8 times; and washing with deionized water and drying (blowing dry with nitrogen or drying by spin).
Preferably, the deposited metal of S6 includes metals commonly used in semiconductors, including Ti, Ni, Ag, and the like.
Preferably, the resulting deposited metal layer of S6 has a thickness of 100-300nm, preferably 110 nm.
Preferably, the thickness of the silicon dioxide layer obtained at S1 is greater than the thickness of the deposited metal layer obtained at S6.
Preferably, the thickness of the silicon dioxide layer is set to
S6 obtaining a deposited metal layer having a thickness of
Then, then
。
Preferably, the positive photoresist layer is set to have a thickness of
The thickness of the deposited metal layer is
Then, then
。
Preferably, the peeling in S7 can be performed by any peeling method commonly used in laboratories.
Preferably, the stripping in S7 may be achieved by a method of depositing a metal layer separately: and adhering the adhesive with strong adhesion to the surface of the metal layer on the surface of the positive photoresist layer, tearing the adhesive to peel off the metal layer on the surface of the positive photoresist layer, and peeling off the residual positive photoresist layer and the silicon dioxide layer.
Preferably, the stripping method of the positive photoresist layer and the silicon dioxide layer can adopt a stripping liquid to ultrasonically assist stripping, wherein the stripping liquid comprises 25-35% vol of hydrofluoric acid by volume percentage.
Advantageous effects
The invention has the beneficial effects that:
the invention is especially suitable for the processing method when the special requirement is required on the pattern angle and the special control is needed. According to the invention, silicon dioxide is adopted to replace an LOR photoresist, the deposition thickness of the silicon dioxide is controllable, and the thinnest can reach 60nm, so that a silicon dioxide layer with the thickness of 60-300nm can be deposited according to the requirement of the product, compared with the LOR photoresist with the same thickness, the cost is greatly reduced, and in the subsequent test, the pattern defect or abnormal problem in wet etching is effectively improved by adopting the silicon dioxide to replace the LOR photoresist. In addition, the invention adopts silicon dioxide to replace LOR photoresist, and adopts low-concentration (10-12: 1 volume ratio) hydrofluoric acid to carry out wet etching process to replace the original organic cleaning agent to manufacture silicon dioxide retraction (undercut), and because the low-concentration hydrofluoric acid does not generate any reaction with the upper part of positive photoresist, the bell mouth shape can not appear, the side effect of projection deposition is reduced, and finally the metal side angle exceeding 30 degrees (the invention can reach 33-51 degrees) can be formed.
Drawings
FIG. 1 is an electron microscope image of a metal side surface of a product obtained in example 9 of the present invention;
FIG. 2 is a schematic diagram of a Liff off metal strip process configuration;
FIG. 3 is an electron micrograph of a product obtained by a conventional Liff off metal stripping process.
Detailed Description
The following embodiments of the present invention are provided by way of specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
The following examples and comparative examples are parallel runs, with the same processing steps and parameters, unless otherwise indicated.
Example 1
An angle control method in a semiconductor Lift off process comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the exposed positive photoresist;
s5, etching the silicon dioxide layer of the obtained device by adopting wet etching to form an etching pattern which is the same as that of the photoresist layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer.
S1, depositing the silicon dioxide, wherein the temperature is 250 ℃, Ar (argon) is introduced, the flow is 800sccm, and the working pressure is 0.2 Pa;
and S1, performing programmed heating treatment after the silicon dioxide is deposited.
The above-mentioned programmed heating treatment comprises: 300 ℃ for 10s, 550 ℃ for 10s, and 400 ℃ for 10 s.
S3 further includes heating to 100 deg.C for 30S after exposure.
S3, the exposure time of the ultraviolet light is 60S, the wavelength of the ultraviolet light is 300-400nm, and the power is 12-17mW/cm 2 。
S4, the developing solution comprises 0.8 wt% sodium hydroxide solution.
S4, the developing method comprises the following steps: spraying excessive developing solution on the surface of the positive photoresist to enable the developing solution to be fully distributed on the surface of the whole positive photoresist, and standing for 90s to enable the positive photoresist in the positive photoresist dissoluble area to be dissolved; continuously spraying the developing solution and simultaneously rotating the device at a speed of 50rpm/min for 30 s; continuously spraying excessive developing solution to make the developing solution fully spread on the surface of the whole positive photoresist, standing for 60s, and rotating the device at the speed of 100rpm/min to throw out the developing solution dissolved with the positive photoresist and the redundant developing solution; and spraying deionized water to the positive photoresist, rotating the device at the speed of 100rpm/min for spin-drying, and repeatedly spraying deionized water and spin-drying for 2 times to clean the device.
S4 further comprises heating at 130 deg.C for 30S after development.
The developing solution can be replaced by other commercially available or published positive photoresist developing solutions, and the developing method can be adjusted accordingly.
And S5, performing wet etching, wherein the etching liquid comprises hydrofluoric acid solution.
S5, the hydrofluoric acid solution comprises deionized water and hydrofluoric acid, and the volume ratio of the deionized water to the hydrofluoric acid is 12: 1.
S5, etching, including: immersing the obtained device in hydrofluoric acid solution, standing for 40min, taking out, and repeating the steps for 5 times; and washing with deionized water and drying (spin-drying).
S6 the deposited metal comprises Ag.
The metal layer deposited in S6 was 110nm thick.
S1 the silicon dioxide is deposited to a thickness of 200 nm.
S2 the coating thickness of the positive photoresist is 1.7 μm.
S7, adopting a method of independently stripping a deposited metal layer: and adhering the adhesive with strong adhesion to the surface of the metal layer on the surface of the positive photoresist layer, tearing the adhesive to peel off the metal layer on the surface of the positive photoresist layer, and peeling off the residual positive photoresist layer and the silicon dioxide layer.
The stripping method of the positive photoresist layer and the silicon dioxide layer can adopt a stripping liquid to ultrasonically assist stripping, wherein the stripping liquid comprises hydrofluoric acid with the volume percentage of 30% vol.
Example 2
An angle control method in a semiconductor Lift off process comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the positive photoresist at the exposed part;
s5, etching the silicon dioxide layer of the obtained device by wet etching to form an etching pattern which is the same as the photoresist layer on the silicon dioxide layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer.
S1, depositing the silicon dioxide, wherein the temperature is 330 ℃, Ar (argon) is introduced, the flow is 1000sccm, and the working pressure is 0.3 Pa;
and S1, performing programmed heating treatment after the silicon dioxide is deposited.
The above-mentioned programmed heating treatment comprises: 300 ℃ for 10s, 550 ℃ for 10s, and 400 ℃ for 10 s.
S3 further includes heating to 100 deg.C for 30S after exposure.
S3, the exposure time of the ultraviolet light is 60S, the wavelength of the ultraviolet light is 300-400nm, and the power is 12-17mW/cm 2 。
S4, the developing solution comprises 0.8 wt% sodium hydroxide solution.
And S4, developing in a developer solution in a mode of spin-coating immersion: spraying excessive developing solution on the surface of the positive photoresist to enable the developing solution to be fully distributed on the surface of the whole positive photoresist, and standing for 90s to enable the positive photoresist in the positive photoresist dissoluble area to be dissolved; continuously spraying the developing solution and simultaneously rotating the device at a speed of 50rpm/min for 30 s; continuously spraying excessive developing solution to make the developing solution fully spread on the surface of the whole positive photoresist, standing for 60s, and rotating the device at the speed of 100rpm/min to throw out the developing solution dissolved with the positive photoresist and the redundant developing solution; and spraying deionized water to the positive photoresist, rotating the device at the speed of 100rpm/min for spin-drying, and repeatedly spraying deionized water and spin-drying for 2 times to clean the device.
S4 further comprises, after developing, heating at 130 ℃ for 30S.
The developing solution can be replaced by other commercially available or disclosed positive photoresist developing solutions, and the developing method can be adjusted accordingly.
And S5, performing wet etching, wherein the etching liquid comprises hydrofluoric acid solution.
S5, the hydrofluoric acid solution comprises deionized water and hydrofluoric acid, and the volume ratio of the deionized water to the hydrofluoric acid is 10:1.
S5, etching, including: immersing the obtained device in hydrofluoric acid solution, standing for 40min, taking out, and repeating the steps for 5 times; and washing with deionized water and drying (spin-drying).
S6 the deposited metal comprises Ag.
The metal layer deposited in S6 was 110nm thick.
S1 the silicon dioxide is deposited to a thickness of 130 nm.
S2 the coating thickness of the positive photoresist is 1.4 μm.
S7, stripping, namely, adopting a method of separately stripping the deposited metal layer: and adhering the adhesive with strong adhesion to the surface of the metal layer on the surface of the positive photoresist layer, tearing the adhesive to peel off the metal layer on the surface of the positive photoresist layer, and peeling off the residual positive photoresist layer and the silicon dioxide layer.
The stripping method of the positive photoresist layer and the silicon dioxide layer can adopt a stripping liquid to ultrasonically assist stripping, wherein the stripping liquid comprises hydrofluoric acid with the volume percentage of 30% vol.
Example 3
An angle control method in a semiconductor Lift off process comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the positive photoresist at the exposed part;
s5, etching the silicon dioxide layer of the obtained device by adopting wet etching to form an etching pattern which is the same as that of the photoresist layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer.
S1, depositing the silicon dioxide, wherein the temperature is 300 ℃, Ar (argon) is introduced, the flow is 1000sccm, and the working pressure is 0.2 Pa;
and S1, performing programmed heating treatment after the silicon dioxide is deposited.
The above-mentioned programmed heating treatment comprises: 300 ℃ for 10s, 550 ℃ for 10s, and 400 ℃ for 10 s.
S3 further includes heating to 100 deg.C for 30S after exposure.
S3, the exposure time of the ultraviolet light is 60S, the wavelength of the ultraviolet light is 300-400nm, and the power is 12-17mW/cm 2 。
S4, the developing solution comprises 0.8 wt% sodium hydroxide solution.
And S4, developing in a developer solution in a mode of spin-coating immersion: spraying excessive developing solution on the surface of the positive photoresist to enable the developing solution to be fully distributed on the surface of the whole positive photoresist, and standing for 90s to enable the positive photoresist in the positive photoresist dissoluble area to be dissolved; continuously spraying the developing solution and simultaneously rotating the device at a speed of 50rpm/min for 30 s; continuously spraying excessive developing solution to make the developing solution fully spread on the surface of the whole positive photoresist, standing for 60s, and rotating the device at the speed of 100rpm/min to throw out the developing solution dissolved with the positive photoresist and the redundant developing solution; and spraying deionized water to the positive photoresist, rotating the device at the speed of 100rpm/min for spin-drying, and repeatedly spraying deionized water and spin-drying for 2 times to clean the device.
S4 further comprises heating at 130 deg.C for 30S after development.
The developing solution can be replaced by other commercially available or disclosed positive photoresist developing solutions, and the developing method can be adjusted accordingly.
And S5, performing wet etching, wherein the etching liquid comprises hydrofluoric acid solution.
S5, the hydrofluoric acid solution comprises deionized water and hydrofluoric acid, and the volume ratio of the deionized water to the hydrofluoric acid is 10:1.
S5, etching, including: immersing the obtained device in hydrofluoric acid solution, standing for 40min, taking out, and repeating the steps for 5 times; and washing with deionized water and drying (spin-drying).
S6 the deposited metal comprises Ag.
The metal layer deposited in S6 was 110nm thick.
S1 the silicon dioxide is deposited to a thickness of 130 nm.
S2 the coating thickness of the positive photoresist is 1.4 μm.
S7, stripping, namely, adopting a method of separately stripping the deposited metal layer: and adhering the adhesive with strong adhesion to the surface of the metal layer on the surface of the positive photoresist layer, tearing the adhesive to peel off the metal layer on the surface of the positive photoresist layer, and peeling off the residual positive photoresist layer and the silicon dioxide layer.
The stripping method of the positive photoresist layer and the silicon dioxide layer can adopt a stripping liquid to ultrasonically assist stripping, wherein the stripping liquid comprises hydrofluoric acid with the volume percentage of 30% vol.
Example 4
An angle control method in a semiconductor Lift off process comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the positive photoresist at the exposed part;
s5, etching the silicon dioxide layer of the obtained device by wet etching to form an etching pattern which is the same as the photoresist layer on the silicon dioxide layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer.
S1, depositing the silicon dioxide, wherein the temperature is 300 ℃, Ar (argon) is introduced, the flow is 1000sccm, and the working pressure is 0.2 Pa;
and S1, performing programmed heating treatment after the silicon dioxide is deposited.
The above-mentioned programmed heating treatment comprises: 300 ℃ for 10s, 550 ℃ for 10s, and 400 ℃ for 10 s.
S3 further includes heating to 100 deg.C for 30S after exposure.
S3, the exposure time of the ultraviolet light is 60S, and the wavelength of the ultraviolet light is 300-400nm, power of 12-17mW/cm 2 。
S4, the developing solution comprises 0.8 wt% sodium hydroxide solution.
And S4, developing in a developer solution in a mode of spin-coating immersion: spraying excessive developing solution on the surface of the positive photoresist to enable the developing solution to be fully distributed on the surface of the whole positive photoresist, and standing for 90s to enable the positive photoresist in the positive photoresist dissoluble area to be dissolved; continuously spraying the developing solution and simultaneously rotating the device at a speed of 50rpm/min for 30 s; continuously spraying excessive developing solution to make the developing solution fully spread on the surface of the whole positive photoresist, standing for 60s, and rotating the device at the speed of 100rpm/min to throw out the developing solution dissolved with the positive photoresist and the redundant developing solution; and spraying deionized water to the positive photoresist, rotating the device at the speed of 100rpm/min for spin-drying, and repeatedly spraying deionized water and spin-drying for 2 times to clean the device.
S4 further comprises heating at 130 deg.C for 30S after development.
The developing solution can be replaced by other commercially available or disclosed positive photoresist developing solutions, and the developing method can be adjusted accordingly.
And S5, performing wet etching, wherein the etching liquid comprises hydrofluoric acid solution.
S5, the hydrofluoric acid solution comprises deionized water and hydrofluoric acid, and the volume ratio of the deionized water to the hydrofluoric acid is 10:1.
S5, etching, including: immersing the obtained device in hydrofluoric acid solution, standing for 40min, performing ultrasound for 3min, and repeating the steps of standing and ultrasound for 5 times; and washing with deionized water and drying (spin-drying).
S6 the deposited metal comprises Ag.
The metal layer deposited in S6 was 110nm thick.
S1 the silicon dioxide is deposited to a thickness of 130 nm.
S2 the coating thickness of the positive photoresist is 1.4 μm.
S7, stripping, namely, adopting a method of separately stripping the deposited metal layer: and adhering the adhesive with strong adhesion to the surface of the metal layer on the surface of the positive photoresist layer, tearing the adhesive to peel off the metal layer on the surface of the positive photoresist layer, and peeling off the residual positive photoresist layer and the silicon dioxide layer.
The stripping method of the positive photoresist layer and the silicon dioxide layer can adopt a stripping liquid to ultrasonically assist stripping, wherein the stripping liquid comprises hydrofluoric acid with the volume percentage of 30% vol.
Example 5
An angle control method in a semiconductor Lift off process comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the positive photoresist at the exposed part;
s5, etching the silicon dioxide layer of the obtained device by wet etching to form an etching pattern which is the same as the photoresist layer on the silicon dioxide layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer.
S1, depositing the silicon dioxide, wherein the temperature is 300 ℃, Ar (argon) is introduced, the flow is 1000sccm, and the working pressure is 0.2 Pa;
and S1, performing programmed heating treatment after the silicon dioxide is deposited.
The above-mentioned programmed heating treatment comprises: 300 ℃ for 10s, 550 ℃ for 10s, and 400 ℃ for 10 s.
S3 further includes heating to 100 deg.C for 30S after exposure.
S3, the exposure time of the ultraviolet light is 60S, the wavelength of the ultraviolet light is 300-400nm, and the power is 12-17mW/cm 2 。
S4, the developing solution comprises 0.8 wt% sodium hydroxide solution.
And S4, developing in a developer solution in a mode of spin-coating immersion: spraying excessive developing solution on the surface of the positive photoresist to enable the developing solution to be fully distributed on the surface of the whole positive photoresist, and standing for 90s to enable the positive photoresist in the positive photoresist dissoluble area to be dissolved; continuously spraying the developing solution and simultaneously rotating the device at a speed of 50rpm/min for 30 s; continuously spraying excessive developing solution to make the developing solution fully spread on the surface of the whole positive photoresist, standing for 60s, and rotating the device at the speed of 100rpm/min to throw out the developing solution dissolved with the positive photoresist and the redundant developing solution; and spraying deionized water to the positive photoresist, rotating the device at the speed of 100rpm/min for spin-drying, and repeatedly spraying deionized water and spin-drying for 2 times to clean the device.
S4 further comprises heating at 130 deg.C for 30S after development.
The developing solution can be replaced by other commercially available or disclosed positive photoresist developing solutions, and the developing method can be adjusted accordingly.
And S5, performing wet etching, wherein the etching liquid comprises hydrofluoric acid solution.
S5, the hydrofluoric acid solution comprises deionized water and hydrofluoric acid, and the volume ratio of the deionized water to the hydrofluoric acid is 10:1.
S5, etching, including: immersing the obtained device in hydrofluoric acid solution, standing for 40min, performing ultrasound for 3min, and repeating the standing and ultrasound steps for 5 times; and washing with deionized water and drying (spin-drying).
S6 the deposited metal comprises Ag.
The metal layer deposited in S6 was 110nm thick.
S1 the silicon dioxide is deposited to a thickness of 130 nm.
The thickness of the positive photoresist layer is set to
Is deposited byThe metal layer has a thickness of
Then, then
This example takes
，
Is 1540 nm.
S7, stripping, namely, adopting a method of separately stripping the deposited metal layer: and adhering the adhesive with strong adhesion to the surface of the metal layer on the surface of the positive photoresist layer, tearing the adhesive to peel off the metal layer on the surface of the positive photoresist layer, and peeling off the residual positive photoresist layer and the silicon dioxide layer.
The stripping method of the positive photoresist layer and the silicon dioxide layer can adopt a stripping liquid to ultrasonically assist stripping, wherein the stripping liquid comprises hydrofluoric acid with the volume percentage of 30% vol.
Example 6
An angle control method in a semiconductor Lift off process comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the positive photoresist at the exposed part;
s5, etching the silicon dioxide layer of the obtained device by wet etching to form an etching pattern which is the same as the photoresist layer on the silicon dioxide layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer.
S1, depositing the silicon dioxide, wherein the temperature is 300 ℃, Ar (argon) is introduced, the flow is 1000sccm, and the working pressure is 0.2 Pa;
and S1, performing programmed heating treatment after the silicon dioxide is deposited.
The above-mentioned programmed heating treatment comprises: 300 ℃ for 10s, 550 ℃ for 10s, and 400 ℃ for 10 s.
S3 further includes heating to 100 deg.C for 30S after exposure.
S3, the exposure time of the ultraviolet light is 60S, the wavelength of the ultraviolet light is 300-400nm, and the power is 12-17mW/cm 2 。
S4, the developing solution comprises 0.8 wt% sodium hydroxide solution.
And S4, developing in a developer solution in a mode of spin-coating immersion: spraying excessive developing solution on the surface of the positive photoresist to enable the developing solution to be fully distributed on the surface of the whole positive photoresist, and standing for 90s to enable the positive photoresist in the positive photoresist dissoluble area to be dissolved; continuously spraying the developing solution and simultaneously rotating the device at a speed of 50rpm/min for 30 s; continuously spraying excessive developing solution to make the developing solution fully spread on the surface of the whole positive photoresist, standing for 60s, and rotating the device at the speed of 100rpm/min to throw out the developing solution dissolved with the positive photoresist and the redundant developing solution; and spraying deionized water to the positive photoresist, rotating the device at the speed of 100rpm/min for spin-drying, and repeatedly spraying deionized water and spin-drying for 2 times to clean the device.
S4 further comprises heating at 130 deg.C for 30S after development.
The developing solution can be replaced by other commercially available or disclosed positive photoresist developing solutions, and the developing method can be adjusted accordingly.
And S5, performing wet etching, wherein the etching liquid comprises hydrofluoric acid solution.
S5, the hydrofluoric acid solution comprises deionized water and hydrofluoric acid, and the volume ratio of the deionized water to the hydrofluoric acid is 10:1.
S5, etching, including: immersing the obtained device in hydrofluoric acid solution, standing for 40min, performing ultrasound for 3min, and repeating the steps of standing and ultrasound for 5 times; and washing with deionized water and drying (spin-drying).
S6 the deposited metal comprises Ag.
The metal layer deposited in S6 was 110nm thick.
S1 the silicon dioxide is deposited to a thickness of 130 nm.
Setting the thickness of the positive photoresist layer as
The thickness of the deposited metal layer is
Then, then
This example takes
，
Was 1650 nm.
S7, adopting a method of independently stripping a deposited metal layer: and adopting the adhesive with strong adhesive force to adhere to the surface of the metal layer on the surface of the positive photoresist layer, tearing the adhesive to peel off the metal layer on the surface of the positive photoresist layer, and peeling off the residual positive photoresist layer and the silicon dioxide layer additionally.
The stripping method of the positive photoresist layer and the silicon dioxide layer can adopt a stripping liquid to ultrasonically assist stripping, wherein the stripping liquid comprises hydrofluoric acid with the volume percentage of 30% vol.
Example 7
An angle control method in a semiconductor Lift off process comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the positive photoresist at the exposed part;
s5, etching the silicon dioxide layer of the obtained device by wet etching to form an etching pattern which is the same as the photoresist layer on the silicon dioxide layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer.
S1, depositing the silicon dioxide, wherein the temperature is 300 ℃, Ar (argon) is introduced, the flow is 1000sccm, and the working pressure is 0.2 Pa;
and S1, performing programmed heating treatment after the silicon dioxide is deposited.
The above-mentioned programmed heating treatment comprises: 300 ℃ for 10s, 550 ℃ for 10s, and 400 ℃ for 10 s.
S3 further includes heating to 100 deg.C for 30S after exposure.
S3, the exposure time of the ultraviolet light is 60S, the wavelength of the ultraviolet light is 300-400nm, and the power is 12-17mW/cm 2 。
S4, the developing solution comprises 0.8 wt% sodium hydroxide solution.
And S4, developing in a developer solution in a mode of spin-coating immersion: spraying excessive developing solution on the surface of the positive photoresist to enable the developing solution to be fully distributed on the surface of the whole positive photoresist, and standing for 90s to enable the positive photoresist in the positive photoresist dissoluble area to be dissolved; continuously spraying the developing solution and simultaneously rotating the device at a speed of 50rpm/min for 30 s; continuously spraying excessive developing solution to make the developing solution fully spread on the surface of the whole positive photoresist, standing for 60s, and rotating the device at the speed of 100rpm/min to throw out the developing solution dissolved with the positive photoresist and the redundant developing solution; and spraying deionized water to the positive photoresist, rotating the device at the speed of 100rpm/min for spin-drying, and repeatedly spraying deionized water and spin-drying for 2 times to clean the device.
S4 further comprises heating at 130 deg.C for 30S after development.
The developing solution can be replaced by other commercially available or published positive photoresist developing solutions, and the developing method can be adjusted accordingly.
And S5, performing wet etching, wherein the etching liquid comprises hydrofluoric acid solution.
S5, the hydrofluoric acid solution comprises deionized water and hydrofluoric acid, and the volume ratio of the deionized water to the hydrofluoric acid is 10:1.
S5, etching, including: immersing the obtained device in hydrofluoric acid solution, standing for 40min, performing ultrasound for 3min, and repeating the standing and ultrasound steps for 5 times; and washing with deionized water and drying (spin-drying).
S6 the deposited metal comprises Ag.
The metal layer deposited in S6 was 110nm thick.
S2 the coating thickness of the positive photoresist is 1.4 μm.
Let the thickness of the silicon dioxide layer be
S6 obtaining a deposited metal layer having a thickness of
Then, then
This example takes
，
Was 143 nm.
S7, stripping, namely, adopting a method of separately stripping the deposited metal layer: and adhering the adhesive with strong adhesion to the surface of the metal layer on the surface of the positive photoresist layer, tearing the adhesive to peel off the metal layer on the surface of the positive photoresist layer, and peeling off the residual positive photoresist layer and the silicon dioxide layer.
The stripping method of the positive photoresist layer and the silicon dioxide layer can adopt a stripping liquid to ultrasonically assist stripping, wherein the stripping liquid comprises hydrofluoric acid with the volume percentage of 30% vol.
Example 8
An angle control method in a semiconductor Lift off process comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the positive photoresist at the exposed part;
s5, etching the silicon dioxide layer of the obtained device by wet etching to form an etching pattern which is the same as the photoresist layer on the silicon dioxide layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer.
S1, depositing the silicon dioxide, wherein the temperature is 300 ℃, Ar (argon) is introduced, the flow is 1000sccm, and the working pressure is 0.2 Pa;
and S1, performing programmed heating treatment after the silicon dioxide is deposited.
The above-mentioned programmed heating treatment comprises: 300 ℃ for 10s, 550 ℃ for 10s, and 400 ℃ for 10 s.
S3 further includes heating to 100 deg.C for 30S after exposure.
S3, the exposure time of the ultraviolet light is 60S, the wavelength of the ultraviolet light is 300-400nm, and the power is 12-17mW/cm 2 。
S4, the developing solution comprises 0.8 wt% sodium hydroxide solution.
And S4, developing in a developer solution in a mode of spin-coating immersion: spraying excessive developing solution on the surface of the positive photoresist to enable the developing solution to be fully distributed on the surface of the whole positive photoresist, and standing for 90s to enable the positive photoresist in the positive photoresist dissoluble area to be dissolved; continuously spraying the developing solution and simultaneously rotating the device at a speed of 50rpm/min for 30 s; continuously spraying excessive developing solution to make the developing solution fully spread on the surface of the whole positive photoresist, standing for 60s, and rotating the device at the speed of 100rpm/min to throw out the developing solution dissolved with the positive photoresist and the redundant developing solution; and spraying deionized water to the positive photoresist, rotating the device at the speed of 100rpm/min for spin-drying, and repeatedly spraying deionized water and spin-drying for 2 times to clean the device.
S4 further comprises heating at 130 deg.C for 30S after development.
The developing solution can be replaced by other commercially available or disclosed positive photoresist developing solutions, and the developing method can be adjusted accordingly.
And S5, performing wet etching, wherein the etching liquid comprises hydrofluoric acid solution.
S5, the hydrofluoric acid solution comprises deionized water and hydrofluoric acid, and the volume ratio of the deionized water to the hydrofluoric acid is 10:1.
S5, etching, including: immersing the obtained device in hydrofluoric acid solution, standing for 40min, performing ultrasound for 3min, and repeating the steps of standing and ultrasound for 5 times; and washing with deionized water and drying (spin-drying).
S6 the deposited metal comprises Ag.
The metal layer deposited in S6 was 110nm thick.
S2 the coating thickness of the positive photoresist is 1.4 μm.
Let the thickness of the silicon dioxide layer be
S6 obtaining a deposited metal layer having a thickness of
Then, then
This example takes
，
Is 187 nm.
S7, stripping, namely, adopting a method of separately stripping the deposited metal layer: and adhering the adhesive with strong adhesion to the surface of the metal layer on the surface of the positive photoresist layer, tearing the adhesive to peel off the metal layer on the surface of the positive photoresist layer, and peeling off the residual positive photoresist layer and the silicon dioxide layer.
The stripping method of the positive photoresist layer and the silicon dioxide layer can adopt a stripping liquid to ultrasonically assist stripping, wherein the stripping liquid comprises hydrofluoric acid with the volume percentage of 30% vol.
Example 9
An angle control method in a semiconductor Lift off process comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the positive photoresist at the exposed part;
s5, etching the silicon dioxide layer of the obtained device by adopting wet etching to form an etching pattern which is the same as that of the photoresist layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer.
S1, depositing the silicon dioxide, wherein the temperature is 300 ℃, Ar (argon) is introduced, the flow is 1000sccm, and the working pressure is 0.2 Pa;
s1, after the silicon dioxide is deposited, carrying out programmed heating treatment.
The above-mentioned programmed heating treatment comprises: 300 ℃ for 10s, 550 ℃ for 10s, and 400 ℃ for 10 s.
S3 further includes heating to 100 deg.C for 30S after exposure.
S3, the exposure time of the ultraviolet light is 60S, the wavelength of the ultraviolet light is 300-400nm, and the power is 12-17mW/cm 2 。
S4, the developing solution comprises 0.8 wt% sodium hydroxide solution.
And S4, developing in a developer solution in a mode of spin-coating immersion: spraying excessive developing solution on the surface of the positive photoresist to enable the developing solution to be fully distributed on the surface of the whole positive photoresist, and standing for 90s to enable the positive photoresist in the positive photoresist dissoluble area to be dissolved; continuously spraying the developing solution and simultaneously rotating the device at a speed of 50rpm/min for 30 s; continuously spraying excessive developing solution to make the developing solution fully spread on the surface of the whole positive photoresist, standing for 60s, and rotating the device at the speed of 100rpm/min to throw out the developing solution dissolved with the positive photoresist and the redundant developing solution; and spraying deionized water to the positive photoresist, rotating the device at the speed of 100rpm/min for spin-drying, and repeatedly spraying deionized water and spin-drying for 2 times to clean the device.
S4 further comprises heating at 130 deg.C for 30S after development.
The developing solution can be replaced by other commercially available or disclosed positive photoresist developing solutions, and the developing method can be adjusted accordingly.
And S5, performing wet etching, wherein the etching liquid comprises hydrofluoric acid solution.
S5, the hydrofluoric acid solution comprises deionized water and hydrofluoric acid, and the volume ratio of the deionized water to the hydrofluoric acid is 10:1.
S5, etching, including: immersing the obtained device in hydrofluoric acid solution, standing for 40min, performing ultrasound for 3min, and repeating the standing and ultrasound steps for 5 times; and washing with deionized water and drying (spin-drying).
S6 the deposited metal comprises Ag.
The metal layer deposited in S6 was 110nm thick.
Let the thickness of the silicon dioxide layer be
S6 obtaining a deposited metal layer having a thickness of
Then, then
This example takes
，
Is 143 nm.
The thickness of the positive photoresist layer is set to
The thickness of the deposited metal layer is
Then, then
This example takes
，
Is 1540 nm.
S7, stripping, namely, adopting a method of separately stripping the deposited metal layer: and adhering the adhesive with strong adhesion to the surface of the metal layer on the surface of the positive photoresist layer, tearing the adhesive to peel off the metal layer on the surface of the positive photoresist layer, and peeling off the residual positive photoresist layer and the silicon dioxide layer.
The stripping method of the positive photoresist layer and the silicon dioxide layer can adopt a stripping liquid to ultrasonically assist stripping, wherein the stripping liquid comprises hydrofluoric acid with the volume percentage of 30% vol.
Example 10
An angle control method in a semiconductor Lift off process comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the positive photoresist at the exposed part;
s5, etching the silicon dioxide layer of the obtained device by wet etching to form an etching pattern which is the same as the photoresist layer on the silicon dioxide layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer.
S1, depositing the silicon dioxide, wherein the temperature is 300 ℃, Ar (argon) is introduced, the flow is 1000sccm, and the working pressure is 0.2 Pa;
and S1, performing programmed heating treatment after the silicon dioxide is deposited.
The above-mentioned programmed heating treatment comprises: 300 ℃ for 10s, 550 ℃ for 10s, and 400 ℃ for 10 s.
S3 further includes heating to 100 deg.C for 30S after exposure.
S3, the exposure time of the ultraviolet light is 60S, the wavelength of the ultraviolet light is 300-400nm, and the power is 12-17mW/cm 2 。
S4, the developing solution comprises 0.8 wt% sodium hydroxide solution.
S4, the developing method comprises the following steps: spraying excessive developing solution on the surface of the positive photoresist to enable the developing solution to be fully distributed on the surface of the whole positive photoresist, and standing for 90s to enable the positive photoresist in the positive photoresist dissoluble area to be dissolved; continuously spraying the developing solution and simultaneously rotating the device at a speed of 50rpm/min for 30 s; continuously spraying excessive developing solution to make the developing solution fully spread on the surface of the whole positive photoresist, standing for 60s, and rotating the device at the speed of 100rpm/min to throw out the developing solution dissolved with the positive photoresist and the redundant developing solution; and spraying deionized water to the positive photoresist, rotating the device at the speed of 100rpm/min for spin-drying, and repeatedly spraying deionized water and spin-drying for 2 times to clean the device.
S4 further comprises, after developing, heating at 130 ℃ for 30S.
The developing solution can be replaced by other commercially available or disclosed positive photoresist developing solutions, and the developing method can be adjusted accordingly.
And S5, performing wet etching, wherein the etching liquid comprises hydrofluoric acid solution.
S5, the hydrofluoric acid solution comprises deionized water and hydrofluoric acid, and the volume ratio of the deionized water to the hydrofluoric acid is 10:1.
S5, etching, including: immersing the obtained device in hydrofluoric acid solution, standing for 40min, performing ultrasound for 3min, and repeating the standing and ultrasound steps for 5 times; and washing with deionized water and drying (spin-drying).
S6 the deposited metal comprises Ag.
The metal layer deposited in S6 was 110nm thick.
Let the thickness of the silicon dioxide layer be
S6 obtaining a deposited metal layer having a thickness of
Then, then
This example takes
，
Is 187 nm.
Setting the thickness of the positive photoresist layer as
The thickness of the deposited metal layer is
Then, then
This example takes
，
Is 1540 nm.
S7, stripping, namely, adopting a method of separately stripping the deposited metal layer: and adhering the adhesive with strong adhesion to the surface of the metal layer on the surface of the positive photoresist layer, tearing the adhesive to peel off the metal layer on the surface of the positive photoresist layer, and peeling off the residual positive photoresist layer and the silicon dioxide layer.
The stripping method of the positive photoresist layer and the silicon dioxide layer can adopt a stripping liquid to ultrasonically assist stripping, wherein the stripping liquid comprises hydrofluoric acid with the volume percentage of 30% vol.
Example 11
An angle control method in a semiconductor Lift off process comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the positive photoresist at the exposed part;
s5, etching the silicon dioxide layer of the obtained device by wet etching to form an etching pattern which is the same as the photoresist layer on the silicon dioxide layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer.
S1, depositing the silicon dioxide, wherein the temperature is 300 ℃, Ar (argon) is introduced, the flow is 1000sccm, and the working pressure is 0.2 Pa;
and S1, performing programmed heating treatment after the silicon dioxide is deposited.
The above-mentioned programmed heating treatment comprises: 300 ℃ for 10s, 550 ℃ for 10s, and 400 ℃ for 10 s.
S3 further includes heating to 100 deg.C for 30S after exposure.
S3, the exposure time of the ultraviolet light is 60S, the wavelength of the ultraviolet light is 300-400nm, and the power is 12-17mW/cm 2 。
S4, the developing solution comprises 0.8 wt% sodium hydroxide solution.
And S4, developing in a developer solution in a mode of spin-coating immersion: spraying excessive developing solution on the surface of the positive photoresist to enable the developing solution to be fully distributed on the surface of the whole positive photoresist, and standing for 90s to enable the positive photoresist in the positive photoresist dissoluble area to be dissolved; continuously spraying the developing solution and simultaneously rotating the device at a speed of 50rpm/min for 30 s; continuously spraying excessive developing solution to make the developing solution fully spread on the surface of the whole positive photoresist, standing for 60s, and rotating the device at the speed of 100rpm/min to throw out the developing solution dissolved with the positive photoresist and the redundant developing solution; and spraying deionized water to the positive photoresist, rotating the device at the speed of 100rpm/min for spin-drying, and repeatedly spraying deionized water and spin-drying for 2 times to clean the device.
S4 further comprises heating at 130 deg.C for 30S after development.
The developing solution can be replaced by other commercially available or published positive photoresist developing solutions, and the developing method can be adjusted accordingly.
S5, carrying out wet etching, wherein the etching liquid comprises hydrofluoric acid solution.
S5, the hydrofluoric acid solution comprises deionized water and hydrofluoric acid, and the volume ratio of the deionized water to the hydrofluoric acid is 10:1.
S5, etching, including: immersing the obtained device in hydrofluoric acid solution, standing for 40min, performing ultrasound for 3min, and repeating the standing and ultrasound steps for 5 times; and washing with deionized water and drying (spin-drying).
S6 the deposited metal comprises Ag.
The metal layer deposited in S6 was 110nm thick.
Let the thickness of the silicon dioxide layer be
S6 obtaining a deposited metal layer having a thickness of
Then, then
This example takes
，
Is 143 nm.
Setting the thickness of the positive photoresist layer as
The thickness of the deposited metal layer is
Then, then
This example takes
，
Was 1650 nm.
S7, stripping, namely, adopting a method of separately stripping the deposited metal layer: and adhering the adhesive with strong adhesion to the surface of the metal layer on the surface of the positive photoresist layer, tearing the adhesive to peel off the metal layer on the surface of the positive photoresist layer, and peeling off the residual positive photoresist layer and the silicon dioxide layer.
The stripping method of the positive photoresist layer and the silicon dioxide layer can adopt a stripping liquid to ultrasonically assist stripping, wherein the stripping liquid comprises hydrofluoric acid with the volume percentage of 30% vol.
Example 12
An angle control method in a semiconductor Lift off process comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the positive photoresist at the exposed part;
s5, etching the silicon dioxide layer of the obtained device by wet etching to form an etching pattern which is the same as the photoresist layer on the silicon dioxide layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer.
S1, depositing the silicon dioxide, wherein the temperature is 300 ℃, Ar (argon) is introduced, the flow is 1000sccm, and the working pressure is 0.2 Pa;
and S1, performing programmed heating treatment after the silicon dioxide is deposited.
The above-mentioned programmed heating treatment comprises: 300 ℃ for 10s, 550 ℃ for 10s, and 400 ℃ for 10 s.
S3 further includes heating to 100 deg.C for 30S after exposure.
S3, the exposure time of the ultraviolet light is 60S, the wavelength of the ultraviolet light is 300-400nm, and the power is 12-17mW/cm 2 。
S4, the developing solution comprises 0.8 wt% sodium hydroxide solution.
And S4, developing in a developer solution in a mode of spin-coating immersion: spraying excessive developing solution on the surface of the positive photoresist to enable the developing solution to be fully distributed on the surface of the whole positive photoresist, and standing for 90s to enable the positive photoresist in the positive photoresist dissoluble area to be dissolved; continuously spraying the developing solution and simultaneously rotating the device at a speed of 50rpm/min for 30 s; continuously spraying excessive developing solution to make the developing solution fully spread on the surface of the whole positive photoresist, standing for 60s, and rotating the device at the speed of 100rpm/min to throw out the developing solution dissolved with the positive photoresist and the redundant developing solution; and spraying deionized water to the positive photoresist, rotating the device at the speed of 100rpm/min for spin-drying, and repeatedly spraying deionized water and spin-drying for 2 times to clean the device.
S4 further comprises heating at 130 deg.C for 30S after development.
The developing solution can be replaced by other commercially available or disclosed positive photoresist developing solutions, and the developing method can be adjusted accordingly.
And S5, performing wet etching, wherein the etching liquid comprises hydrofluoric acid solution.
S5, the hydrofluoric acid solution comprises deionized water and hydrofluoric acid, and the volume ratio of the deionized water to the hydrofluoric acid is 10:1.
S5, etching, including: immersing the obtained device in hydrofluoric acid solution, standing for 40min, performing ultrasound for 3min, and repeating the standing and ultrasound steps for 5 times; and washing with deionized water and drying (spin-drying).
S6 the deposited metal comprises Ag.
The metal layer deposited in S6 was 110nm thick.
Let the thickness of the silicon dioxide layer be
S6 obtaining a deposited metal layer having a thickness of
Then, then
This example takes
，
Is 187 nm.
Setting the thickness of the positive photoresist layer as
The thickness of the deposited metal layer is
Then, then
This example takes
，
Was 1650 nm.
S7, stripping, namely, adopting a method of separately stripping the deposited metal layer: and adhering the adhesive with strong adhesion to the surface of the metal layer on the surface of the positive photoresist layer, tearing the adhesive to peel off the metal layer on the surface of the positive photoresist layer, and peeling off the residual positive photoresist layer and the silicon dioxide layer.
The stripping method of the positive photoresist layer and the silicon dioxide layer can adopt a stripping liquid to ultrasonically assist stripping, wherein the stripping liquid comprises hydrofluoric acid with the volume percentage of 30% vol.
Comparative example 1
An angle control method in a semiconductor Lift off process comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the positive photoresist at the exposed part;
s5, etching the silicon dioxide layer of the obtained device by wet etching to form an etching pattern which is the same as the photoresist layer on the silicon dioxide layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer.
S1, depositing the silicon dioxide, wherein the temperature is 300 ℃, Ar (argon) is introduced, the flow is 1000sccm, and the working pressure is 0.2 Pa;
and S1, performing programmed heating treatment after the silicon dioxide is deposited.
The above-mentioned programmed heating treatment comprises: 300 ℃ for 10s, 550 ℃ for 10s, and 400 ℃ for 10 s.
S3 further includes heating to 100 deg.C for 30S after exposure.
S3, the exposure time of the ultraviolet light is 60S, the wavelength of the ultraviolet light is 300-400nm, and the power is 12-17mW/cm 2 。
S4, the developing solution comprises 0.8 wt% sodium hydroxide solution.
And S4, developing in a developer solution in a mode of spin-coating immersion: spraying excessive developing solution on the surface of the positive photoresist to enable the developing solution to be fully distributed on the surface of the whole positive photoresist, and standing for 90s to enable the positive photoresist in the positive photoresist dissoluble area to be dissolved; continuously spraying the developing solution and simultaneously rotating the device at a speed of 50rpm/min for 30 s; continuously spraying excessive developing solution to make the developing solution fully spread on the surface of the whole positive photoresist, standing for 60s, and rotating the device at the speed of 100rpm/min to throw out the developing solution dissolved with the positive photoresist and the redundant developing solution; and spraying deionized water to the positive photoresist, rotating the device at the speed of 100rpm/min for spin-drying, and repeatedly spraying deionized water and spin-drying for 2 times to clean the device.
S4 further comprises heating at 130 deg.C for 30S after development.
The developing solution can be replaced by other commercially available or disclosed positive photoresist developing solutions, and the developing method can be adjusted accordingly.
And S5, performing wet etching, wherein the etching liquid comprises hydrofluoric acid solution.
S5, the hydrofluoric acid solution comprises deionized water and hydrofluoric acid, and the volume ratio of the deionized water to the hydrofluoric acid is 10: 1.2.
S5, etching, including: immersing the obtained device in hydrofluoric acid solution, standing for 40min, performing ultrasound for 3min, and repeating the standing and ultrasound steps for 5 times; and washing with deionized water and drying (spin-drying).
S6 the deposited metal comprises Ag.
The metal layer deposited in S6 was 110nm thick.
Let the thickness of the silicon dioxide layer be
S6 obtaining a deposited metal layer having a thickness of
Then, then
This example takes
，
Is 187 nm.
The thickness of the positive photoresist layer is set to
The thickness of the deposited metal layer is
Then, then
This example takes
，
Was 1650 nm.
S7, stripping, namely, adopting a method of separately stripping the deposited metal layer: and adhering the adhesive with strong adhesion to the surface of the metal layer on the surface of the positive photoresist layer, tearing the adhesive to peel off the metal layer on the surface of the positive photoresist layer, and peeling off the residual positive photoresist layer and the silicon dioxide layer.
The stripping method of the positive photoresist layer and the silicon dioxide layer can adopt a stripping liquid to ultrasonically assist stripping, wherein the stripping liquid comprises hydrofluoric acid with the volume percentage of 30% vol.
Comparative example 2
An angle control method in a semiconductor Lift off process comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the positive photoresist at the exposed part;
s5, etching the silicon dioxide layer of the obtained device by wet etching to form an etching pattern which is the same as the photoresist layer on the silicon dioxide layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer.
S1, depositing the silicon dioxide, wherein the temperature is 300 ℃, Ar (argon) is introduced, the flow is 1000sccm, and the working pressure is 0.2 Pa;
and S1, performing programmed heating treatment after the silicon dioxide is deposited.
The above-mentioned programmed heating treatment comprises: 300 ℃ for 10s, 550 ℃ for 10s, and 400 ℃ for 10 s.
S3 further includes heating to 100 deg.C for 30S after exposure.
S3, the exposure time of the ultraviolet light is 60S, the wavelength of the ultraviolet light is 300-400nm, and the power is 12-17mW/cm 2 。
S4, the developing solution comprises 0.8 wt% sodium hydroxide solution.
S4, the developing method comprises the following steps: spraying excessive developing solution on the surface of the positive photoresist to enable the developing solution to be fully distributed on the surface of the whole positive photoresist, and standing for 90s to enable the positive photoresist in the positive photoresist dissoluble area to be dissolved; continuously spraying the developing solution and simultaneously rotating the device at a speed of 50rpm/min for 30 s; continuously spraying excessive developing solution to make the developing solution fully spread on the surface of the whole positive photoresist, standing for 60s, and rotating the device at the speed of 100rpm/min to throw out the developing solution dissolved with the positive photoresist and the redundant developing solution; and spraying deionized water to the positive photoresist, rotating the device at the speed of 100rpm/min for spin-drying, and repeatedly spraying deionized water and spin-drying for 2 times to clean the device.
S4 further comprises heating at 130 deg.C for 30S after development.
The developing solution can be replaced by other commercially available or published positive photoresist developing solutions, and the developing method can be adjusted accordingly.
And S5, performing wet etching, wherein the etching liquid comprises hydrofluoric acid solution.
S5, the hydrofluoric acid solution comprises deionized water and hydrofluoric acid, and the volume ratio of the deionized water to the hydrofluoric acid is 13: 1.
S5, etching, including: immersing the obtained device in hydrofluoric acid solution, standing for 40min, performing ultrasound for 3min, and repeating the standing and ultrasound steps for 5 times; and washing with deionized water and drying (spin-drying).
S6 the deposited metal comprises Ag.
The metal layer deposited in S6 was 110nm thick.
Let the thickness of the silicon dioxide layer be
The thickness of the deposited metal layer obtained in S6 is
Then, then
This example takes
，
Is 187 nm.
Setting the thickness of the positive photoresist layer as
The thickness of the deposited metal layer is
Then, then
This example takes
，
Was 1650 nm.
S7, stripping, namely, adopting a method of separately stripping the deposited metal layer: and adhering the adhesive with strong adhesion to the surface of the metal layer on the surface of the positive photoresist layer, tearing the adhesive to peel off the metal layer on the surface of the positive photoresist layer, and peeling off the residual positive photoresist layer and the silicon dioxide layer.
The stripping method of the positive photoresist layer and the silicon dioxide layer can adopt a stripping liquid to ultrasonically assist stripping, wherein the stripping liquid comprises hydrofluoric acid with the volume percentage of 30% vol.
The metal side angles obtained in the above examples and comparative examples are the average values of 5 groups of parallel experimental angles respectively, and the effects are as follows: the silicon dioxide retraction effect is good, no bell mouth shape appears on the photoresist, the projection deposition side effect is small, (see fig. 3 for an example, which is a first metal layer side angle electron microscope photograph prepared in example 9), and finally, a metal side angle exceeding 30 degrees can be formed (examples 1-10, the metal side angles are 30 degrees, 31 degrees, 33 degrees, 37 degrees, 42 degrees, 44 degrees and 39 degrees in sequence), the metal layer patterns obtained in examples 3-12 are accurate, the edges are clear, and other film layers are not left. Examples 1-3 the metal side angle exceeded 30 °, but the resulting pattern was occasionally defective and had non-smooth edges, etc. Comparative example 1 the metal side angle was 19 ° (15 sets of data were averaged for 5 parallel runs and 3 measurements were made for each sample), and the resulting pattern was all defective and non-smooth at the edges. The patterns obtained in comparative example 2 were all defective and non-smooth at the edges, and similarly, 15 sets of data were taken in 5 sets of parallel experiments, each sample measured 3, but the metal flank angle range spanned between 11 ° and 29 ° and was not of reference significance, and it was observed that the sample of comparative example 2 had significant inevitable damage to the pattern of the deposited metal layer in the exfoliation of the positive photoresist layer and the silicon dioxide layer. Therefore, the hydrofluoric acid etching concentration adopted by the invention can effectively ensure the completeness and accuracy of the pattern, and a larger and stable metal side angle can be obtained. In addition, the specific relationship among the thickness of the deposited metal layer, the thickness of the silicon dioxide layer and the thickness of the positive photoresist layer provided by the invention greatly improves the metal side angle under the condition that other conditions are not changed, and the research is carried out on the prior art, so that the trend or the directional report of the influence of the thickness proportion on the metal side angle is not found, and the effect cannot be achieved by simply limiting the thickness relationship between the two, which is not thought in advance, and the test effect is also really improved.
The comparative example uses conventional Lift off (Metal stripping) -a conventional process:
in the current Lift off process, as shown in fig. 2 and 3, the area 1 metal and the area 2 metal are sputtered metal at the same time, the area 1 metal will be stripped off in the future, and the area 2 metal is the metal to be retained and has a thickness of only 110 nm. Since this block of metal is used for special functions in the manufacture of filters for the block of metal in region 2, the block width of the metal in region 2 is an integer multiple of half the acoustic wavelength. The closer the zone 2 metal boundary angle is to 90 deg., the better. The middle LOR photoresist is a photoresist special for a Lift off process, and is used for specially manufacturing undercut (undercut) to prevent the metal in the region 2 from being completely attached to the photoresist for deposition, so that when the photoresist is cleaned by a subsequent Lift off process, the metal is attached to the photoresist region and torn, and the metal in the region 2 is pulled up. However, due to the retraction, it is likely that defects in the projected deposition will be caused, and the region 2 metal smearing effect will occur, the shorter this smearing is the better, i.e. the closer the side metal boundary angle is to 90 °, the better (the dotted circle in fig. 2). The traditional process has the problems that the LOR is correspondingly required to be thinner due to the thin metal thickness of the region 2, the process difficulty required by thinner LOR photoresist is increased, and the market price is increased by multiple times, for example, the price of the photoresist with the thickness of 300nm for the LOR is about 15000 RMB per liter, and the price of the photoresist with the thickness of 200nm for the LOR is 32000 RMB per liter. In addition to this price problem, there is a serious technical barrier, LOR is a wet etching process using an organic detergent to shrink it inward (circled part in the square of fig. 3), and the organic detergent slightly erodes the positive photoresist, which results in an obvious bell-mouth shape at the opening, thereby amplifying the side effect of the projected deposition, so that the metal deposition is smeared seriously, and the angle is often less than 10 ° (7.13 ° for circled part in fig. 3)
While the preferred embodiments and examples of the present invention have been described in detail, the present invention is not limited to the embodiments and examples, and various changes can be made without departing from the spirit of the present invention within the knowledge of those skilled in the art.
Claims (4)
1. An angle control method in a semiconductor metal stripping process is characterized by comprising the following steps: the method comprises the following steps:
s1, depositing silicon dioxide on the surface of the substrate;
s2, coating a positive photoresist on the silicon dioxide surface of the obtained device;
s3, exposing the positive photoresist after the positive photoresist surface of the obtained device shields the graphical mask plate;
s4, developing the positive photoresist, and removing the exposed positive photoresist;
s5, etching the silicon dioxide layer of the obtained device by wet etching to form an etching pattern which is the same as the photoresist layer on the silicon dioxide layer;
s6, depositing a metal layer on the surface of the obtained device;
s7, stripping the silicon dioxide layer on the surface of the device, the positive photoresist layer and the metal layer on the surface of the positive photoresist layer;
s1, the thickness of the deposited silicon dioxide is 60-300 nm; the deposited metal layer obtained in S6 has a thickness of 100-300 nm; let the thickness of the obtained silicon dioxide layer be
The thickness of the obtained positive photoresist layer is
The thickness of the obtained deposited metal layer is
Then, then
(ii) a S5, performing wet etching, wherein the etching liquid comprises hydrofluoric acid solution; s5, preparing a hydrofluoric acid solution comprising deionized water and hydrofluoric acid, wherein the volume ratio of the deionized water to the hydrofluoric acid is 10:1 to 12: 1; s5, etching, including: immersing the obtained device in hydrofluoric acid solution, standing for 30-60min, performing ultrasound for 2-5min, and repeating the standing and ultrasound steps for 3-8 times; washing with deionized water and drying; s2, the coating thickness of the positive photoresist is 0.7-5 μm; s6 the deposited metal includes metals commonly used in semiconductors, including Ti, Ni, Ag.
2. The method of claim 1, wherein the angle control comprises: s1, depositing silicon dioxide at 250-330 deg.C, introducing argon at 800-1000sccm and 0.2-0.3 Pa.
3. The method of claim 1, wherein the angle control comprises: after the deposition of the silica described in S1, a programmed heating treatment was performed.
4. The method of claim 3, wherein the angle control comprises: the programmed heating treatment comprises the following steps: after heat treatment at 300 ℃ for 10s, heat treatment at 550 ℃ for 10s, and then heat treatment at 400 ℃ for 10 s.
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