CN114765112B - Etching system and etching method thereof - Google Patents

Etching system and etching method thereof Download PDF

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CN114765112B
CN114765112B CN202110033476.5A CN202110033476A CN114765112B CN 114765112 B CN114765112 B CN 114765112B CN 202110033476 A CN202110033476 A CN 202110033476A CN 114765112 B CN114765112 B CN 114765112B
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etching
mask layer
thickness
mask
completion time
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CN114765112A (en
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林士杰
柯顺祥
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Winbond Electronics Corp
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Winbond Electronics Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

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Abstract

本发明提供一种蚀刻系统及其蚀刻方法。终点检测器检测对被处理材料进行蚀刻处理时产生的光在特定波长的光强度，而产生终点检测信号。被处理材料包括材料层以及形成于材料层上的至少一罩幕层。控制装置依据终点检测信号判断罩幕层的蚀刻完成时间，依据蚀刻完成时间计算罩幕层的厚度，并依据罩幕层的厚度调整材料层的蚀刻时间。

The present invention provides an etching system and an etching method thereof. An endpoint detector detects the light intensity of light at a specific wavelength generated when etching a processed material, and generates an endpoint detection signal. The processed material includes a material layer and at least one mask layer formed on the material layer. A control device determines the etching completion time of the mask layer according to the endpoint detection signal, calculates the thickness of the mask layer according to the etching completion time, and adjusts the etching time of the material layer according to the thickness of the mask layer.

Description

Etching system and etching method thereof
Technical Field
The present invention relates to semiconductor devices, and more particularly, to an etching system and an etching method thereof.
Background
In recent years, with the development of semiconductor processes, the requirements on the integration level and performance of elements are higher and higher, and the plasma technology (Plasma Technology) plays an important role in the field of semiconductor manufacturing. Plasma technology is used in many semiconductor processes, such as deposition processes (e.g., chemical vapor deposition), etching processes (e.g., dry etching), etc., by exciting a process gas to form a plasma. As semiconductor devices shrink in size and circuit complexity increases, mask film complexity and aspect ratio of etched features correspondingly increase, and the accuracy requirements for plasma processing become more stringent.
In the prior art, a light source is usually disposed in an etching chamber to provide light to a substrate to be etched, and information of etching depth is obtained by analyzing a spectrum of reflected light emitted from the material to be etched, so as to determine whether a target etching end point is reached. However, when the aspect ratio of the features on the etched substrate is higher, the reflected light is less likely to form complete interference fringes, which may easily cause error in determining the etching endpoint, thereby affecting the accuracy of the semiconductor process.
Disclosure of Invention
The invention provides an etching system and an etching method thereof, which can effectively improve the accuracy of a semiconductor process.
The etching system of the invention comprises an etching device and a control device. Wherein the etching device performs etching treatment on the treated material to form the feature structure. The etching device comprises an end point detector which detects the light intensity of light at a specific wavelength generated when etching the processed material to generate an end point detection signal, wherein the processed material comprises a material layer and at least one mask layer formed on the material layer. The control device is coupled with the etching device, judges the etching completion time of the mask layer according to the end point detection signal, calculates the thickness of the mask layer according to the etching completion time, and adjusts the etching time of the material layer according to the thickness of the mask layer.
The invention also provides an etching method of the etching system, which is used for carrying out etching treatment on the processed material so as to form the characteristic structure. The etching method of the etching system includes the following steps. The method comprises the steps of detecting light intensity of light at a specific wavelength generated when etching a material to be processed to generate an end point detection signal, wherein the material to be processed comprises a material layer and at least one mask layer formed on the material layer. And judging the etching completion time of the mask layer according to the end point detection signal. The thickness of the mask layer is calculated according to the etching completion time. The etching time of the material layer is adjusted according to the thickness of the mask layer.
Based on the above, the embodiment of the invention judges the etching completion time of the mask layer according to the endpoint detection signal, calculates the thickness of the mask layer according to the etching completion time, and adjusts the etching time of the material layer according to the thickness of the mask layer, so that the thickness of the mask layer can be accurately obtained by calculating the thickness of the mask layer according to the etching completion time of the mask layer, thereby accurately grasping the etching process progress of the material layer and effectively improving the accuracy of the semiconductor process.
In order to make the above features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIG. 1 is a schematic diagram of an etching system according to an embodiment of the present invention;
FIG. 2 is a schematic illustration of a material being processed in accordance with an embodiment of the invention;
FIG. 3 is a schematic view of a material being processed according to another embodiment of the invention;
FIGS. 4A-4C are schematic diagrams illustrating a relationship between etching time and corresponding etching thickness of a mask layer;
FIG. 5 is a graph showing the relationship between the compensation time and the thickness difference of an etching material layer according to an embodiment of the present invention;
Fig. 6 is a flow chart of an etching method of the etching system according to an embodiment of the invention.
Detailed Description
The term "coupled" as used in this specification (including the claims) may refer to any direct or indirect connection. For example, "a first device coupled to a second device" may be interpreted as "the first device is directly connected to the second device" or "the first device is indirectly connected to the second device through other devices or connections. Furthermore, wherever appropriate, elements/devices/steps having the same reference numbers will be used throughout the drawings and examples to refer to the same or like parts. Elements/devices/steps having the same reference number or designation in different embodiments may be referenced interchangeably.
Various embodiments are provided below to describe the present disclosure in detail, but the present disclosure is not limited to the provided embodiments and the provided embodiments may be combined as appropriate. In the following embodiments, the same or similar reference numerals denote the same or similar members or signals.
Fig. 1 is a schematic diagram of an etching system according to an embodiment of the invention, please refer to fig. 1. The etching system 100 includes an etching device 102 and a control device 104, the etching device 102 being coupled to the control device 104. The etching device 102 is used to etch the material 108 to be processed to form features on the material 108 to be processed. As shown in fig. 2, the processed material 108 may include a photoresist layer 202, a mask layer 204, and a material layer 206, wherein the mask layer 204 is formed on the material layer 206, and the photoresist layer 202 is formed on the mask layer 204. In some embodiments, the photoresist layer 202 may be patterned, for example, by a photolithography process, such that the photoresist layer 202 has a feature pattern, and the feature pattern of the photoresist layer 202 is used as a mask to etch the mask layer 204 and the material layer 206 to form the feature. In some embodiments, the material layer 206 may be an elemental semiconductor substrate (e.g., a silicon substrate or germanium-based) or a compound semiconductor substrate (e.g., a silicon carbide substrate or gallium arsenide substrate). In some embodiments, the mask layer 204 may be formed of a dielectric material, such as silicon oxide (SiO), silicon nitride (SiN), or silicon oxynitride (SiON).
In the present embodiment, the etching device 102 may be, for example, a plasma etching device, but is not limited thereto. Further, the etching apparatus 102 may include an etching chamber R1, an etching gas generator N1, and an endpoint detector 106. The etch chamber R1 may contain a material 108 to be processed, as shown in fig. 1, and the material 108 to be processed may be placed on a susceptor B1 within the etch chamber R1. The etching gas generator N1 may generate an etching gas into the etching chamber R1 to generate plasma to perform the etching process on the material 108. The endpoint detector 106 may detect an endpoint detection signal generated by light intensity at a specific wavelength of light generated when etching the material 108 to be processed. For example, in this embodiment, the endpoint detector 106 may detect the spectrum emitted by the plasma during the plasma etching process, and since the spectrum changes significantly when etching to different material layers, the endpoint detection signal generated by the endpoint detector 106 also changes in signal intensity, which may indicate whether the etching endpoint is reached.
The control device 104 may be, for example, a computer or other electronic device with computing capability, but not limited thereto, the control device 104 may determine the etching completion time of the mask layer 204 according to the endpoint detection signal, that is, the time required for the mask layer 204 to be etched to reach the endpoint (the material layer 206) as shown on the right side of fig. 2. The control device 104 may calculate the thickness of the mask layer 204 according to the etching completion time of the mask layer 204, for example, multiply the etching completion time of the mask layer 204 by the etching speed of the mask layer 204 to calculate the thickness of the mask layer 204, wherein the etching speed of the mask layer 204 may be obtained by collecting data through a conventional experiment, for example. Since the thickness variation of the mask layer 204 will change the aspect ratio of the features formed on the material 108 to be processed in conjunction with the different aspect ratios, the etch time required to etch the same depth in the material layer 206 is different, and thus the thickness variation of the mask layer 204 may correspond to the etch time of different material layers 206. After obtaining the thickness of the mask layer 204, the control device 104 can adjust the etching time of the material layer 206 according to the thickness of the mask layer 204, so as to avoid the situation that the material layer 206 is under-etched or over-etched due to the thickness variation of the mask layer 204 caused by the process or other factors. In addition, since the etching system of the present embodiment can obtain the etching depth information by analyzing the reflected light without adding a light source in the etching chamber as in the prior art, and can directly detect the light emitted by the plasma during the plasma etching process and calculate the thickness of the mask layer 204 according to the etching time, the thickness (etching depth) information of the mask layer 204 can be accurately obtained without increasing the measurement cost or interrupting the etching process to perform the etching depth measurement, thereby achieving the effect of precisely etching the material layer 206.
Further, the control device 104 may calculate a thickness difference according to the thickness of the mask layer 204, for example, subtracting a predetermined thickness (e.g., a standard thickness) of the mask layer 204 from the calculated thickness of the mask layer 204 to obtain a thickness difference (i.e., a thickness variation value of the mask layer 204), and adjust the etching time of the material layer 206 according to the thickness difference, for example, increase or decrease the etching time by a compensation time to ensure that the material layer 206 can be etched to a desired depth. Wherein the relationship between the thickness difference and the compensation time of the etching material layer 206 may be obtained by collecting data, for example, through routine experiments.
In some embodiments, the material 108 may also include multiple masking layers, and is not limited to the embodiment of FIG. 2 including only one masking layer. As shown in fig. 3, the material 108 to be processed may include a photoresist layer 302, three mask layers 304, 306, 308, and a material layer 310. In some embodiments, the material layer 310 may be an elemental semiconductor substrate (e.g., a silicon substrate or germanium-based) or a compound semiconductor substrate (e.g., a silicon carbide substrate or gallium arsenide substrate). In some embodiments, the mask layers 304, 306, 308 may be formed of a dielectric material, such as silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON). Similarly, endpoint detector 106 may detect the spectrum emitted by the plasma during the plasma etch to generate an endpoint detection signal. For example, the endpoint detector 106 may detect light intensities of different specific wavelengths corresponding to different mask layers, respectively, to generate corresponding endpoint detection signals. The control device 104 can determine the etching completion time of the mask layers 304, 306, and 308 according to the endpoint detection signals corresponding to the mask layers 304, 306, and 308, and calculate the sum of the thicknesses of the mask layers 304, 306, and 308 according to the etching completion time of the mask layers 304, 306, and 308 and the etching speed of the mask layers 304, 306, and 308, respectively. The sum H of the thicknesses of the mask layers 304, 306, and 308 may be, for example, as shown in the following equation:
H=RA×TA+RB×TB+RC×TC (1)
Where RA, RB are the etch rates of the mask layers 304, 306, and 308, respectively, and TA, TB, TC are the etch completion times of the mask layers 304, 306, and 308, respectively. In some embodiments, the relationship between the etching time of the mask layers 304, 306, and 308 and the corresponding etching thickness may be stored in the memory circuit of the control device 104, and after the control device 104 obtains the etching completion time of the mask layers 304, 306, and 308 according to the endpoint detection signal, the control device 104 may obtain the thicknesses of the mask layers 304, 306, and 308 corresponding to the etching completion time of the mask layers 304, 306, and 308 in a table look-up manner. For example, fig. 4A-4C are schematic diagrams of the etching time and the corresponding etching thickness of the mask layers 304, 306, and 308, and as shown in fig. 4A-4C, the curves corresponding to different mask layers have different slopes (etching speeds), and the etching completion times TA, TB, and TC may correspond to the thicknesses HA, HB, and HC of the mask layers 304, 306, and 308, respectively. The control device 104 may add the thicknesses HA, HB, and HC to obtain the sum H of the thicknesses of the mask layers 304, 306, and 308.
Similarly, the control device 104 may subtract the sum H of the thicknesses of the mask layers 304, 306, and 308 from the sum of the preset thicknesses of the mask layers 304, 306, and 308 to obtain a thickness difference HD (i.e., the total thickness variation of the mask layers 304, 306, and 308), and adjust the etching time of the material layer 310 according to the thickness difference. For example, the memory circuit of the control device 104 may store the etching compensation time of the material layer 310 corresponding to the thickness difference, so that the control device 104 may obtain the etching compensation time of the material layer 310 corresponding to the thickness difference in a table look-up manner. For example, fig. 5 is a graph illustrating a relationship between the compensation time and the thickness difference of the etching material layer 310 according to an embodiment of the invention. As shown in fig. 5, each thickness difference may correspond to a compensation time, for example, the thickness difference HD of the embodiment of fig. 4A-4C may correspond to the compensation time TD, and the control device 104 may add the etching time of the material layer 310 to the compensation time TD to ensure that the material layer 310 may be accurately etched to the desired depth. It should be noted that the thickness difference HD may be positive or negative, and the corresponding compensation time TD may be positive or negative, that is, the control device 104 may increase or decrease the etching time of the material layer 310 to achieve precise etching of the material layer 310.
Fig. 6 is a flow chart of an etching method of the etching system according to an embodiment of the invention. As can be seen from the above embodiments, the etching method of the etching system can include the following steps. First, the light intensity of the light generated during the etching process on the material to be processed is detected to generate an endpoint detection signal (step S602), wherein the material to be processed includes a material layer and at least one mask layer formed on the material layer. The etching process may be, for example, a plasma etching process, but not limited to, the etching system may include an etching chamber for containing the material to be processed, and the etching process may be performed on the material to be processed by generating an etching gas into the etching chamber. Next, the etching completion time of the mask layer is determined according to the endpoint detection signal (step S604). Then, the thickness of the mask layer is calculated according to the etching completion time (step S606). Finally, the etching time of the material layer is adjusted according to the thickness of the mask layer (step S608), for example, the thickness difference of the mask layer can be calculated according to the thickness of the mask layer, and the etching time of the material layer is adjusted according to the thickness difference, wherein the thickness difference can be the difference of the thickness of the mask layer minus a preset thickness (for example, the standard thickness of the mask layer).
In the embodiment with multiple mask layers, the etching completion time of each mask layer can be determined according to the endpoint detection signal corresponding to each mask layer, and the thickness of each mask layer can be calculated according to the etching completion time of each mask layer. And then adjusting the etching time of the material layer according to the sum of the thicknesses of the mask layers, for example, subtracting the sum of the preset thicknesses of the mask layers from the sum of the thicknesses of the mask layers to obtain a thickness difference, and adjusting the etching time of the material layer according to the thickness difference.
In summary, the etching completion time of the mask layer is determined according to the endpoint detection signal, the thickness of the mask layer is calculated according to the etching completion time, and the etching time of the material layer is adjusted according to the thickness of the mask layer. Therefore, the thickness of the mask layer can be accurately obtained by calculating the etching completion time of the mask layer, the etching treatment progress of the material layer can be accurately mastered, and the accuracy of the semiconductor process can be effectively improved. In addition, since the etching system of the embodiment can obtain the etching depth information by analyzing the reflected light without adding a light source in the etching chamber as in the prior art, the etching depth measurement can be performed without increasing the measurement cost or interrupting the etching process, and the thickness (etching depth) information of the mask layer can be accurately obtained, thereby achieving the effect of precisely etching the material layer.
Although the invention has been described with reference to the above embodiments, it should be understood that the invention is not limited thereto, but rather may be modified or altered somewhat by persons skilled in the art without departing from the spirit and scope of the invention.

Claims (10)

1.一种蚀刻系统，其特征在于，包括：1. An etching system, comprising: 蚀刻装置，对被处理材料进行蚀刻处理，以形成特征结构，所述蚀刻装置包括：An etching device is used to perform etching on the material to be processed to form a characteristic structure, and the etching device comprises: 终点检测器，检测对所述被处理材料进行所述蚀刻处理时产生的光在特定波长的光强度而产生终点检测信号，所述被处理材料包括材料层以及形成于所述材料层上的至少一罩幕层；以及an endpoint detector for detecting the light intensity at a specific wavelength generated when the etching process is performed on the processed material to generate an endpoint detection signal, wherein the processed material includes a material layer and at least one mask layer formed on the material layer; and 控制装置，耦接所述蚀刻装置，依据所述终点检测信号判断所述罩幕层的蚀刻完成时间，依据所述蚀刻完成时间计算所述罩幕层的厚度，依据所述罩幕层的厚度调整所述材料层的蚀刻时间。The control device is coupled to the etching device, determines the etching completion time of the mask layer according to the endpoint detection signal, calculates the thickness of the mask layer according to the etching completion time, and adjusts the etching time of the material layer according to the thickness of the mask layer. 2.根据权利要求1所述的蚀刻系统，其特征在于，所述控制装置依据所述罩幕层的厚度计算厚度差值，并依据所述厚度差值调整所述材料层的蚀刻时间，其中所述厚度差值等于所述罩幕层的厚度减去预设厚度。2. The etching system according to claim 1 is characterized in that the control device calculates the thickness difference according to the thickness of the mask layer, and adjusts the etching time of the material layer according to the thickness difference, wherein the thickness difference is equal to the thickness of the mask layer minus a preset thickness. 3.根据权利要求1所述的蚀刻系统，其特征在于，所述被处理材料包括多个罩幕层，所述控制装置依据所述终点检测信号判断各罩幕层的蚀刻完成时间，依据各罩幕层的蚀刻完成时间计算各罩幕层的厚度，并依据所述多个罩幕层的厚度总和调整所述材料层的蚀刻时间。3. The etching system according to claim 1 is characterized in that the processed material includes multiple mask layers, the control device determines the etching completion time of each mask layer according to the endpoint detection signal, calculates the thickness of each mask layer according to the etching completion time of each mask layer, and adjusts the etching time of the material layer according to the sum of the thicknesses of the multiple mask layers. 4.根据权利要求1所述的蚀刻系统，其特征在于，所述控制装置将各罩幕层的蚀刻完成时间乘以对应的蚀刻速度，以获得各罩幕层的厚度。4 . The etching system according to claim 1 , wherein the control device multiplies the etching completion time of each mask layer by the corresponding etching speed to obtain the thickness of each mask layer. 5.根据权利要求1所述的蚀刻系统，其特征在于，所述蚀刻装置还包括：5. The etching system according to claim 1, characterized in that the etching device further comprises: 蚀刻腔室，容纳所述被处理材料；以及an etching chamber, containing the processed material; and 蚀刻气体产生器，产生蚀刻气体至所述蚀刻腔室，以产生等离子体对所述被处理材料进行所述蚀刻处理。The etching gas generator generates etching gas to the etching chamber to generate plasma to perform the etching process on the processed material. 6.一种蚀刻系统的蚀刻方法，其特征在于，所述蚀刻系统的蚀刻方法用以对被处理材料进行蚀刻处理，以形成特征结构，所述蚀刻系统的蚀刻方法包括：6. An etching method of an etching system, characterized in that the etching method of the etching system is used to etch a processed material to form a characteristic structure, and the etching method of the etching system comprises: 检测对所述被处理材料进行所述蚀刻处理时产生的光在特定波长的光强度而产生终点检测信号，其中所述被处理材料包括材料层以及形成于所述材料层上的至少一罩幕层；Detecting the light intensity at a specific wavelength generated when the processed material is subjected to the etching process to generate an endpoint detection signal, wherein the processed material includes a material layer and at least one mask layer formed on the material layer; 依据所述终点检测信号判断所述罩幕层的蚀刻完成时间；Determining the etching completion time of the mask layer according to the endpoint detection signal; 依据所述蚀刻完成时间计算所述罩幕层的厚度；以及calculating the thickness of the mask layer according to the etching completion time; and 依据所述罩幕层的厚度调整所述材料层的蚀刻时间。The etching time of the material layer is adjusted according to the thickness of the mask layer. 7.根据权利要求6所述的蚀刻系统的蚀刻方法，其特征在于，包括：7. The etching method of the etching system according to claim 6, characterized in that it comprises: 依据所述罩幕层的厚度计算所述罩幕层的厚度差值；以及calculating a thickness difference of the mask layer according to the thickness of the mask layer; and 依据所述厚度差值调整所述材料层的蚀刻时间，其中所述厚度差值等于所述罩幕层的厚度减去预设厚度。The etching time of the material layer is adjusted according to the thickness difference, wherein the thickness difference is equal to the thickness of the mask layer minus a preset thickness. 8.根据权利要求6所述的蚀刻系统的蚀刻方法，其特征在于，所述被处理材料包括多个罩幕层，所述蚀刻系统的蚀刻方法包括：8. The etching method of the etching system according to claim 6, wherein the processed material comprises a plurality of mask layers, and the etching method of the etching system comprises: 依据所述终点检测信号判断各罩幕层的蚀刻完成时间；Determining the etching completion time of each mask layer according to the endpoint detection signal; 依据各罩幕层的蚀刻完成时间计算各罩幕层的厚度；以及Calculating the thickness of each mask layer according to the etching completion time of each mask layer; and 依据所述多个罩幕层的厚度总和调整所述材料层的蚀刻时间。The etching time of the material layer is adjusted according to the total thickness of the plurality of mask layers. 9.根据权利要求6所述的蚀刻系统的蚀刻方法，其特征在于，包括：9. The etching method of the etching system according to claim 6, characterized in that it comprises: 将各罩幕层的蚀刻完成时间乘以对应的蚀刻速度，以获得各罩幕层的厚度。The etching completion time of each mask layer is multiplied by the corresponding etching speed to obtain the thickness of each mask layer. 10.根据权利要求6所述的蚀刻系统的蚀刻方法，其特征在于，所述材料层是元素半导体基底或化合物半导体基底。10 . The etching method of the etching system according to claim 6 , wherein the material layer is an element semiconductor substrate or a compound semiconductor substrate.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002081917A (en) * 2000-06-20 2002-03-22 Hitachi Ltd Method and apparatus for measuring film thickness of material to be treated by emission spectroscopy and method and apparatus for treating material to be treated using the same
CN1574245A (en) * 2003-06-12 2005-02-02 松下电器产业株式会社 Terminal testing method and device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6449038B1 (en) * 1999-12-13 2002-09-10 Applied Materials, Inc. Detecting a process endpoint from a change in reflectivity
JP2003151955A (en) * 2001-11-19 2003-05-23 Nec Kansai Ltd Plasma etching method
US7306696B2 (en) * 2002-11-01 2007-12-11 Applied Materials, Inc. Interferometric endpoint determination in a substrate etching process
JP4400406B2 (en) * 2004-10-08 2010-01-20 エルピーダメモリ株式会社 Manufacturing method of semiconductor device
US20080176149A1 (en) * 2006-10-30 2008-07-24 Applied Materials, Inc. Endpoint detection for photomask etching
JP6132688B2 (en) * 2013-07-18 2017-05-24 株式会社日立ハイテクノロジーズ Plasma processing apparatus and plasma processing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002081917A (en) * 2000-06-20 2002-03-22 Hitachi Ltd Method and apparatus for measuring film thickness of material to be treated by emission spectroscopy and method and apparatus for treating material to be treated using the same
CN1574245A (en) * 2003-06-12 2005-02-02 松下电器产业株式会社 Terminal testing method and device

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