CN117062945B - Reactor and growth device - Google Patents

Reactor and growth device

Info

Publication number
CN117062945B
CN117062945B CN202080108140.4A CN202080108140A CN117062945B CN 117062945 B CN117062945 B CN 117062945B CN 202080108140 A CN202080108140 A CN 202080108140A CN 117062945 B CN117062945 B CN 117062945B
Authority
CN
China
Prior art keywords
chamber
reactor
gas
channel
inlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080108140.4A
Other languages
Chinese (zh)
Other versions
CN117062945A (en
Inventor
刘南柳
张浩东
申健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Dongguan Institute of Opto Electronics Peking University
Original Assignee
Huawei Technologies Co Ltd
Dongguan Institute of Opto Electronics Peking University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd, Dongguan Institute of Opto Electronics Peking University filed Critical Huawei Technologies Co Ltd
Publication of CN117062945A publication Critical patent/CN117062945A/en
Application granted granted Critical
Publication of CN117062945B publication Critical patent/CN117062945B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本申请实施例提供一种反应器及生长装置，通过反应器本体的内部具有反应腔室，反应器本体上相对的两个侧壁上分别设有进气口和出气口，进气口和出气口均与反应腔室连通，反应腔室分隔为第一腔室和第二腔室，进气口包括第一进气口以及第二进气口，第一进气口和出气口分别与第一腔室连通，第二进气口与第二腔室连通，且第一腔室和所述第二腔室之间具有多个将第一腔室和第二腔室连通的控流通孔，能够提高反应气体与金属源的反应转化率，从而能够提高晶体的生长速率。

This application provides a reactor and growth apparatus. The reactor body has a reaction chamber inside. An inlet and an outlet are respectively provided on two opposite side walls of the reactor body. Both the inlet and outlet are connected to the reaction chamber. The reaction chamber is divided into a first chamber and a second chamber. The inlet includes a first inlet and a second inlet. The first inlet and outlet are connected to the first chamber, and the second inlet is connected to the second chamber. There are multiple flow control holes connecting the first chamber and the second chamber, which can improve the reaction conversion rate between the reaction gas and the metal source, thereby improving the crystal growth rate.

Description

Reactor and growth device
Technical Field
The embodiment of the application relates to the technical field of semiconductors, in particular to a reactor and a growth device.
Background
In the development of semiconductor science and technology, vapor phase epitaxy plays an important role. Vapor phase epitaxy is a single crystal thin layer growth method, which is to deposit a semiconductor material on a single crystal wafer in a vapor phase state, so that it grows a single crystal layer with a desirable thickness and resistivity along the crystal axis direction of the single crystal wafer. Typically, prior to vapor phase epitaxial growth of a single crystal layer, for example, prior to vapor phase epitaxial growth of a group III wide band gap nitride semiconductor material, a halide gas or halogen gas is reacted with a group III metal source in a reactor to form a metal-containing precursor, which is then transported to the substrate surface by a carrier gas (e.g., nitrogen or hydrogen) and reacted with ammonia to form the nitride semiconductor material.
In the prior art, when a halide gas or a halogen gas is reacted with a group III metal source in a reactor to generate a metal-containing precursor, the reactor is generally a cylindrical reactor, the cylindrical reactor comprises an air inlet pipe, a cylindrical container and an air outlet pipe, the air inlet pipe comprises an air inlet connecting pipe and a spiral spray pipe, the spiral spray pipe is positioned in the cylindrical container, the reaction gas (such as the halide gas or the halogen gas) is introduced into the cylindrical container from the air inlet pipe and then reacts with the metal on the surface layer of the metal source in the cylindrical container, and then the resultant (the metal-containing precursor) after the reaction and the unreacted gas are output from the cylindrical container through the air outlet pipe.
However, with the above-described reactor, the reaction conversion rate of the reaction gas with the metal source is low, resulting in a low crystal growth rate.
Disclosure of Invention
The embodiment of the application provides a reactor and a growth device, which can improve the reaction conversion rate of reaction gas and a metal source, thereby improving the growth rate of crystals.
The first aspect of the embodiment of the application provides a reactor, which at least comprises a reactor body, wherein a reaction chamber is arranged in the reactor body, air inlets and air outlets are respectively arranged on two opposite side walls of the reactor body, the air inlets and the air outlets are communicated with the reaction chamber, the reaction chamber is divided into a first chamber and a second chamber, the air inlets comprise a first air inlet and a second air inlet, the first air inlet and the air outlets are respectively communicated with the first chamber, the second air inlet is communicated with the second chamber, and a plurality of flow control holes are formed between the first chamber and the second chamber so as to communicate the first chamber with the second chamber.
According to the reactor provided by the embodiment of the application, the different air inlets are arranged on the reactor body, the first air inlet is communicated with the first cavity, the second air inlet is communicated with the second cavity, and the first cavity and the second cavity are communicated through the plurality of flow control holes, so that gas entering the second cavity through the second air inlet can flow through the plurality of flow control Kong Penru into the first cavity to form a compact gas curtain layer, and the reaction gas entering the first cavity through the second air inlet can be caused to fully contact with a metal source in the first cavity, so that the reaction conversion efficiency of the reaction gas and the metal source can be effectively improved, and the growth rate of crystals can be improved to a certain extent.
In one possible implementation, the second chamber is located above the first chamber. Like this, when the gas that gets into the second cavity from the second air inlet passes through a plurality of accuse circulation Kong Penru in the first cavity, can form from top to bottom the gas curtain layer, the gas in the second cavity is spouted in the first cavity from top to bottom through a plurality of accuse flow holes, can produce great impact to the reaction gas that gets into the first cavity through the second air inlet to make the reaction gas can more fully contact with the metal source in the first cavity.
In one possible implementation manner, a first baffle is disposed between the first chamber and the second chamber, and a plurality of flow control holes are formed in the first baffle so as to communicate the first chamber with the second chamber. Through set up first baffle between first cavity and second cavity, can separate the reaction chamber and put into two cavities, through having a plurality of on first baffle accuse flow hole, can communicate first cavity and second cavity, simple process easily realizes.
In one possible implementation manner, the plurality of flow control holes are uniformly and alternately distributed on the first baffle plate, or the plurality of flow control holes are alternately distributed on the first baffle plate, and the density of the flow control holes is gradually increased from one end of the first baffle plate, which is close to the air inlet, to one end of the first baffle plate, which is close to the air outlet, or the plurality of flow control holes are alternately distributed on the first baffle plate, and the density of the flow control holes is gradually reduced from one end of the first baffle plate, which is close to the air inlet, to one end of the first baffle plate, which is close to the air outlet.
In this way, when the gas in the second chamber passes through the plurality of control flows Kong Penru in the first chamber, the gas curtain layer can be relatively uniformly formed, so that the gas in the second chamber uniformly impacts the reaction gas entering the first chamber through the second gas inlet. Or when the gas in the second chamber passes through the plurality of control flows Kong Penru in the first chamber, the gas in the second chamber forms a denser gas curtain layer in the direction from one end of the first baffle close to the gas inlet to one end of the first baffle close to the gas outlet, so that denser and denser impact is generated on the reaction gas entering the first chamber through the second gas inlet. Or when the gas in the second chamber passes through the plurality of control flows Kong Penru in the first chamber, the gas in the second chamber forms a denser gas curtain layer in the direction from one end of the first baffle close to the gas outlet to one end of the first baffle close to the gas inlet, so that denser and denser impact is generated on the reaction gas entering the first chamber through the second gas inlet. Or the specific distribution mode of the plurality of flow control holes on the first baffle plate can be flexibly set according to the requirements of practical application scenes.
In one possible implementation, the diameter of the flow control holes is 50nm-500um.
In one possible implementation, the diameter of the flow control hole is 20um-80um. The diameter of the flow control hole is smaller, so that gas entering the second chamber can form a compact gas curtain layer when flowing through the first chamber Kong Penru, and the reaction gas can be fully contacted with the metal source in the first chamber.
In one possible implementation, a distance between two adjacent flow control holes in the plurality of flow control holes is 1-3mm. The distance between two adjacent control flow holes in the plurality of control flow holes is set to be smaller, the interval between the two adjacent control flow holes can be reduced, and when gas entering the second chamber passes through the plurality of control flow Kong Penru and flows into the first chamber, a more compact gas curtain layer is formed, so that the reaction gas can be in contact with a metal source in the first chamber more fully.
In one possible implementation, each of the flow control holes is formed with an extension extending toward one side of the first chamber. Through the extension that is formed with the extension in the one side of every accuse circulation hole towards first cavity, can form spout formula structure in the position department of every accuse circulation hole, when the gas in the second cavity gets into first cavity through this spout formula structure, can produce bigger impact to the reaction gas in the first cavity to make the reaction gas more fully contact with the metal source in the first cavity.
In one possible implementation, the cross-sectional shape of the extension is the same as the shape of the flow control hole.
In one possible implementation, the extension has an extension length of 1-3mm.
In one possible implementation manner, a second baffle plate is arranged between the reaction chamber and the air outlet, one end of the second baffle plate is connected with the lower bottom wall of the reactor body, and a first gap is formed between the other end of the second baffle plate and the upper bottom wall of the reactor body.
Through being provided with the second baffle between reaction chamber and gas outlet, the one end of second baffle links to each other with the lower diapire of reactor body, forms first clearance between the last diapire of second baffle, and the reaction gas of partial incomplete reaction in the first cavity and the metal source steam in the first cavity are after meetting the second baffle, are blockked the return by the second baffle and form the vortex, and like this, the reaction gas of partial incomplete reaction in the first cavity and the metal source steam in the first cavity can more fully contact the reaction, and the gaseous rethread first clearance after the reaction flows out reaction chamber.
In a possible implementation manner, the reaction chamber further has at least one channel therein, an inlet of the channel is communicated with the first chamber, and an outlet of the channel is communicated with the air outlet.
Through having at least one passageway in the reaction chamber, the entry of passageway is linked together with first cavity, and the export of passageway is linked together with the gas outlet, can increase the circulation route in the reaction chamber, like this, the partial incomplete reaction's of first cavity reacting gas and the metal source steam in the first cavity can further take place the reaction in the passageway to effectively improve the reaction conversion efficiency of reacting gas and metal source, improve the growth rate of crystal to a certain extent.
In one possible implementation, the reaction chamber has two channels therein, an inlet of a first channel of the two channels is in communication with the first chamber, an outlet of the first channel is in communication with an inlet of a second channel of the two channels, an outlet of the second channel is in communication with the gas outlet, and the inlet of the first channel and the outlet of the second channel are on the same side of the reactor body.
Through having two passageways in the reaction chamber, the entry and the first cavity intercommunication of first passageway, the export of first passageway is linked together with the entry of second passageway, the export and the gas outlet intercommunication of second passageway, and the entry of first passageway is located the same side of reactor body with the export of second passageway, can further increase the circulation route in the reaction chamber, and can save the occupation space of first passageway and second passageway in the reaction chamber.
In one possible implementation manner, at least one channel is provided with a flow blocking structure, the channel is provided with a first side wall, a second side wall, an upper bottom wall and a lower bottom wall, the flow blocking structure is fixedly connected with any one, any two or any three of the first side wall, the second side wall, the upper bottom wall and the lower bottom wall, and a second gap is formed between the flow blocking structure and at least one of the first side wall, the second side wall, the upper bottom wall and the lower bottom wall.
Through being provided with the choked flow structure in at least one passageway, the reaction gas of partial incomplete reaction in the first cavity and the metal source steam in the first cavity are after getting into the passageway, are blocked by the choked flow structure and form the vortex, can effectively prevent the escape of incomplete reaction's reaction gas and metal source steam for the reaction gas of partial incomplete reaction in the first cavity and metal source steam can more fully react, and the gas that the abundant reaction after-produced flows out the reaction chamber through the second clearance again, thereby ensure conversion rate and crystal growth speed.
In one possible implementation, the flow blocking structure comprises at least one flow blocking body fixedly connected with one of an upper bottom wall and a lower bottom wall of the channel, and the flow blocking body forms the second gap with the other of the upper bottom wall and the lower bottom wall of the channel.
By arranging one or more baffle bodies in at least one channel, the baffle bodies are fixedly connected with one of the upper bottom wall and the lower bottom wall of the channel, and a second gap is formed between the baffle bodies and the other of the upper bottom wall and the lower bottom wall of the channel, so that after the partially incompletely reacted reaction gas in the first chamber and the metal source steam in the first chamber enter the channel, the partially incompletely reacted reaction gas and the metal source steam are blocked to form vortex flow due to the fact that the baffle bodies are fixedly connected with one of the upper bottom wall and the lower bottom wall of the channel, escape of the incompletely reacted reaction gas and the metal source steam can be effectively prevented, the partially incompletely reacted reaction gas and the metal source steam in the first chamber can be fully reacted, and then the gas generated after the full reaction flows out of the reaction chamber through the second gap formed between the baffle bodies and the other of the upper bottom wall and the lower bottom wall of the channel, and the conversion rate and the crystal growth speed are ensured.
In one possible implementation, the number of the flow blocking bodies is a plurality, and the flow blocking bodies are distributed at intervals along the extending direction of the channel. The quantity of the fluid in the channel is increased to further block the incompletely reacted reaction gas and the metal source steam, so that the incompletely reacted reaction gas and the metal source steam can be more effectively prevented from escaping, and the incompletely reacted reaction gas and the metal source steam in the first chamber can be further and fully reacted.
In one possible implementation, the blocking body is a columnar structure.
In one possible implementation, the blocking body is a spiral structure. By arranging the fluid in a spiral structure, the contact area between the outer surface of the choke body and the gas can be increased, and thus, the choke body can play a better role in blocking the gas.
In one possible embodiment, the axial direction of the blocking body is perpendicular to the direction of extension of the channel. In this way, the blocking effect of the blocking body on the gas in the passage can be further increased.
In one possible implementation, the reactor is a group III metal source reactor.
In one possible implementation, the reactor is a gallium-source reactor.
In one possible implementation, the reaction chamber of the reactor body has liquid gallium therein.
In one possible implementation, the gas introduced into the first gas inlet of the reactor is a halide gas or a halogen gas.
In one possible implementation manner, when the gas introduced into the first gas inlet of the reactor is halide gas or halogen gas, the material of the reactor is quartz or corundum. Quartz or corundum is resistant to high temperatures and to corrosion by halide gases or halogen gases, so that the reactor is prevented from being destroyed without being resistant to high temperatures or from being corroded by halide gases or halogen gases.
In one possible implementation manner, the gas introduced into the second gas inlet of the reactor is any one or more of hydrogen, argon and nitrogen.
According to a second aspect of the embodiment of the application, a growing device at least comprises growing equipment and any one of the reactors, wherein the outlet of the reactor is communicated with the inlet of the growing equipment.
The growth device at least comprises growth equipment and a reactor, wherein an outlet of the reactor is communicated with an inlet of the growth equipment, different air inlets are arranged on a reactor body, a first air inlet is communicated with a first cavity, a second air inlet is communicated with a second cavity, and the first cavity and the second cavity are communicated through a plurality of flow control holes, so that gas entering the second cavity through the second air inlet can flow through a plurality of flow control Kong Penru to the first cavity to form a compact gas curtain layer, and the reaction gas entering the first cavity through the second air inlet can be fully contacted with a metal source in the first cavity, so that the reaction conversion efficiency of the reaction gas and the metal source can be effectively improved. The gas generated in the reactor enters the inlet of the growth device from the gas outlet and further reacts with substances in the growth device to generate crystals, and the reaction conversion efficiency of the reactor is improved, so that the growth rate of the crystals in the growth device can be improved to a certain extent.
These and other aspects, implementations, and advantages of the exemplary embodiments will become apparent from the following description of the embodiments, taken in conjunction with the accompanying drawings. It is to be understood that the specification and drawings are solely for purposes of illustration and not as a definition of the limits of the embodiments of the application, for which reference should be made to the appended claims. Additional aspects and advantages of embodiments of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of embodiments of the application. Furthermore, the aspects and advantages of the embodiments of the application may be realized and attained by means of the instrumentalities and combinations particularly pointed out in the appended claims.
Drawings
FIG. 1 is a schematic view of a reactor according to an embodiment of the present application;
FIG. 2 is a schematic view of a reactor according to an embodiment of the present application;
FIG. 3 is a schematic view of a reactor according to an embodiment of the present application;
FIG. 4 is a schematic view of a reactor according to an embodiment of the present application;
FIG. 5 is a schematic view of a reactor according to an embodiment of the present application;
FIG. 6 is a schematic view of a reactor according to an embodiment of the present application;
FIG. 7 is a schematic view of a reactor according to an embodiment of the present application;
FIG. 8 is a schematic view of the operation of a reactor according to an embodiment of the present application.
Reference numerals illustrate:
100-reactor, 1-reactor body, 10-reaction chamber, 101-first chamber, 102-second chamber, 103-flow control holes, 1031-extension, 104-first baffle, 105-channel, 1051-first channel, 1052-second channel, 106-choke structure, 1061-choke body, 107-second gap, 20-inlet, 201-first inlet, 202-second inlet, 30-outlet, 40-second baffle, 50-first gap, 11-lower bottom wall of reactor body, 12-upper bottom wall of reactor body.
Detailed Description
The terminology used in the description of the embodiments of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application, as will be described in detail with reference to the accompanying drawings.
Group III wide bandgap nitride semiconductor materials, such as gallium nitride (GaN) and aluminum nitride (AlN), have great application prospects in short wavelength optoelectronic devices and high frequency high power electronic devices, whereas vapor phase epitaxy is the primary method of epitaxial growth of group III nitride semiconductor materials and device fabrication thereof. Among them, the halide vapor phase epitaxy (Hydride Vapor Phase Epitaxy, HVPE) technology has become the mainstream technology for preparing GaN single crystal substrates at present due to its characteristics of fast growth rate, simple process, etc. In HVPE technology, a halide gas or halogen gas (e.g., hydrogen chloride or chlorine) is reacted with a group III metal source (e.g., gallium or aluminum metal) in a reactor to produce a metal-containing precursor (e.g., gallium chloride or aluminum chloride), which is then transported by a carrier gas (e.g., nitrogen or hydrogen) to a substrate surface within a growth apparatus to react with ammonia within the growth apparatus to produce a nitride semiconductor material. In the HVPE system, the contact reaction time of the reactive source gas and the metal source is directly related to the effective utilization rate of the source gas, the growth rate of the GaN single crystal material and the epitaxial quality of the crystal.
In the current horizontal HVPE system structure, taking a group III metal source as an example of gallium, a gallium boat of a metal reactor is generally of a simple semi-cylindrical structure, which comprises an air inlet pipe, a cylindrical container and an air outlet pipe, wherein the air inlet pipe comprises an air inlet connecting pipe and a spiral spray pipe, the spiral spray pipe is positioned in the cylindrical container, halide gas or halogen gas is introduced into the cylindrical container from the air inlet pipe and then reacts with metal on the surface layer of the gallium source in the cylindrical container, and then the reacted product (such as gallium chloride) and unreacted complete gas are output from the air outlet pipe to the cylindrical container. However, the gallium boat adopting the metal reactor is easy to cause the problem that the halide gas or the halogen gas and the metal gallium source steam are not completely reacted and directly enter the reaction cavity, the reaction conversion rate of the reaction gas and the metal gallium source is lower, so that the crystal growth rate is difficult to improve, and meanwhile, unreacted halide can corrode crystal materials to interfere with the crystal growth, thereby causing serious negative effects on the crystal quality of the materials.
Based on this, the embodiment of the application provides a reactor, by arranging different air inlets on the reactor body, wherein the first air inlet is communicated with the first chamber, the second air inlet is communicated with the second chamber, and the first chamber and the second chamber are communicated through a plurality of flow control holes, so that the gas entering the second chamber through the second air inlet can flow through a plurality of flow control holes Kong Penru in the first chamber to form a compact gas curtain layer, the reaction gas entering the first chamber through the second air inlet can be caused to fully contact with the metal source in the first chamber, thereby effectively improving the reaction conversion efficiency of the reaction gas and the metal source, improving the growth rate of crystals to a certain extent, and avoiding the problems that unreacted reaction gas can corrode crystal materials to interfere with crystal growth and seriously negatively affect the crystal quality of the materials.
The specific structure of the reactor will be described with reference to the accompanying drawings.
Example 1
Referring to fig. 1, an embodiment of the present application provides a reactor 100, where the reactor 100 may at least include a reactor body 1, wherein a reaction chamber 10 is provided in the reactor body 1, and two opposite sidewalls of the reactor body 1 are respectively provided with an air inlet 20 and an air outlet 30, and the air inlet 20 and the air outlet 30 are both in communication with the reaction chamber 10.
Specifically, the reaction chamber 10 is partitioned into a first chamber 101 and a second chamber 102, the gas inlet 20 includes a first gas inlet 201 and a second gas inlet 202, the first gas inlet 201 and the gas outlet 30 are respectively communicated with the first chamber 101, the second gas inlet 202 is communicated with the second chamber 102, and a plurality of flow control holes 103 are provided between the first chamber 101 and the second chamber 102 to communicate the first chamber 101 and the second chamber 102.
In this way, the gas entering the second chamber 102 through the second gas inlet 202 can be sprayed into the first chamber 101 through the plurality of flow control holes 103 to form a compact gas curtain layer, so that the reaction gas entering the first chamber 101 through the second gas inlet 202 can be fully contacted with the metal source in the first chamber 101, the contact probability and the contact time of the reaction gas and the metal source are increased, the reaction conversion efficiency of the reaction gas and the metal source can be effectively improved, and the growth rate of crystals is further improved to a certain extent. Moreover, the problem of fluctuation of conversion rate and supply amount caused by gradual decrease of the metal source liquid level along with reaction consumption can be solved by injecting the plurality of flow control holes 103 into the first chamber 101, and the reactor 100 provided by the embodiment of the application can still ensure the contact reaction between the reaction gas and the metal source under the condition that the metal source liquid level decreases, so that the process stability can be ensured.
In an embodiment of the present application, as shown in fig. 1, the second chamber 102 may be located above the first chamber 101. In this way, when the gas entering the second chamber 102 from the second gas inlet 202 is injected into the first chamber 101 through the plurality of flow control holes 103, a gas curtain layer can be formed from top to bottom, and the gas in the second chamber 102 is injected into the first chamber 101 from top to bottom through the plurality of flow control holes 103, so that a larger impact can be generated on the reaction gas entering the first chamber 101 through the second gas inlet 202, and the reaction gas can be more fully contacted with the metal source in the first chamber 101.
A first baffle 104 may be disposed between the first chamber 101 and the second chamber 102, and the first baffle 104 may have a plurality of flow control holes 103 formed therein to communicate the first chamber 101 with the second chamber 102. By providing the first baffle 104 between the first chamber 101 and the second chamber 102, the reaction chamber 10 can be partitioned into two chambers, and by providing the first baffle 104 with a plurality of flow control holes 103, the first chamber 101 and the second chamber 102 can be communicated, and the process is simple and easy to realize.
The specific distribution manner of the plurality of flow control holes 103 on the first baffle 104 includes, but is not limited to, the following several possible implementations:
One possible implementation manner is that the plurality of flow control holes 103 are uniformly spaced on the first baffle 104. In this way, when the gas in the second chamber 102 is injected into the first chamber 101 through the plurality of flow control holes 103, a gas curtain layer can be formed relatively uniformly, so that the gas in the second chamber 102 uniformly impacts the reaction gas entering the first chamber 101 through the second gas inlet 202.
Another possible implementation manner is that the plurality of flow control holes 103 are distributed on the first baffle 104 at intervals, and the density of the flow control holes 103 gradually increases from one end of the first baffle 104 near the air inlet 20 to one end of the first baffle 104 near the air outlet 30. In this way, when the gas in the second chamber 102 is injected into the first chamber 101 through the plurality of flow control holes 103, the gas in the second chamber 102 forms a denser gas curtain layer in a direction from one end of the first baffle 104 near the gas inlet 20 to one end of the first baffle 104 near the gas outlet 30, thereby generating denser impact on the reaction gas entering the first chamber 101 through the second gas inlet 202.
In another possible implementation manner, the plurality of flow control holes 103 are distributed on the first baffle 104 at intervals, and the density of the flow control holes 103 gradually decreases from one end of the first baffle 104 near the air inlet 20 to one end of the first baffle 104 near the air outlet 30. In this way, when the gas in the second chamber 102 is injected into the first chamber 101 through the plurality of flow control holes 103, the gas in the second chamber 102 forms a denser gas curtain layer in a direction from one end of the first baffle 104 near the gas outlet 30 to one end of the first baffle 104 near the gas inlet 20, thereby generating denser impact on the reaction gas entering the first chamber 101 through the second gas inlet 202.
Of course, in the embodiment of the present application, the specific distribution manner of the plurality of flow control holes 103 on the first baffle 104 may be flexibly set, for example, graded distribution, according to the air flow control requirement in the actual application scenario. The embodiments of the present application are not limited thereto nor to the examples described above.
In the embodiment of the present application, the diameter of the flow control hole 103 may be 50nm to 500um. It should be noted that, the numerical values and numerical ranges referred to in the present application are approximate values, and may have a certain range of errors due to the influence of the manufacturing process, and those errors may be considered to be negligible by those skilled in the art.
Further, the diameter of the flow control hole 103 may be 20um to 80um. For example, the diameter of the flow control hole 103 may be 30um, 50um, 70um, or the like, which is not limited by the embodiment of the present application, and is not limited to the above example. The diameter of the flow control holes 103 is smaller, so that when gas entering the second chamber 102 is sprayed into the first chamber 101 through the flow control holes 103, a relatively compact gas curtain layer is formed, and the reaction gas can be in contact with a metal source in the first chamber 101 more fully.
In addition, referring to fig. 1, a distance L1 between adjacent two of the plurality of flow control holes 103 may be 1 to 3mm. For example, the distance L1 between two adjacent flow control holes 103 may be 1.5mm, 2.0mm, 2.5mm, or the like, which is not limited by the embodiment of the present application, and is not limited to the above example. The distance between two adjacent control flow holes 103 of the plurality of control flow holes 103 is set smaller, so that the interval between the two adjacent control flow holes 103 can be reduced, and when the gas entering the second chamber 102 is sprayed into the first chamber 101 through the plurality of control flow holes 103, a more compact gas curtain layer is formed, so that the reaction gas can be fully contacted with the metal source in the first chamber 101.
It should be noted that, the shape of the flow control hole 103 may be circular, conical, square, or the like, which is not limited in the embodiment of the present application, and is not limited to the above example.
In the embodiment of the present application, the side of each flow control hole 103 facing the first chamber 101 may be further extended with an extension portion 1031. By forming the extension portion 1031 extending toward one side of the first chamber 101 at each flow control hole 103, a spout structure can be formed at the position of each flow control hole 103, and when the gas in the second chamber 102 enters the first chamber 101 through the spout structure, a greater impact can be generated on the reaction gas in the first chamber 101, so that the reaction gas can be more sufficiently contacted with the metal source in the first chamber 101. In addition, the cross-sectional shape of the extension portion 1031 may be the same as the shape of the flow control hole 103. That is, when the shape of the flow control hole 103 is circular, the cross-sectional shape of the extension 1031 may be circular.
The extension 1031 may have an extension length of 1-3mm. For example, the extension length of the extension portion 1031 may be 1.5mm, 2.0mm, 2.5mm, or the like, which is not limited by the embodiment of the present application, and is not limited to the above example.
Referring to fig. 2, a second baffle 40 may be further provided between the reaction chamber 10 and the gas outlet 30, wherein one end of the second baffle 40 is connected to the lower bottom wall 11 of the reactor body, and a first gap 50 is formed between the other end of the second baffle 40 and the upper bottom wall 12 of the reactor body. In this way, after the partially incompletely reacted reaction gas in the first chamber 101 and the metal source vapor in the first chamber 101 meet the second baffle 40, the reaction gas is blocked by the second baffle 40 to return to form a vortex, and the residence time of the reaction gas in the reactor body 1 is prolonged. The partial incompletely reacted reaction gas in the first chamber 101 and the metal source steam in the first chamber 101 can be fully contacted and reacted, and the gas generated by the reaction flows out of the reaction chamber 10 through the first gap 50.
In addition, by setting the second baffle 40 and combining with the regulation and control of the partial pressure and flow rate of the gas (the gas entering through the second gas inlet 202), the flow direction and flow field of the reaction gas (the gas entering through the first gas inlet 201) can be effectively changed, the mixing of the unreacted reaction gas and the metal source steam into the reaction precursor (i.e. the gas generated by the reaction of the reaction gas and the metal source steam) is effectively prevented, the conversion efficiency of the reaction gas into the metal precursor is greatly reduced, so that the stability of the conversion efficiency of the metal precursor can be realized, and the large-scale production is facilitated.
In one possible implementation, as shown in fig. 3, the reaction chamber 10 may further have at least one channel 105 therein, wherein an inlet of the channel 105 communicates with the first chamber 101 and an outlet of the channel 105 communicates with the gas outlet 30. In this way, the flow path within the reaction chamber 10 can be increased, further increasing the chance of contact between the reactant gas and the metal source vapor. The reaction gas partially incompletely reacted in the first chamber 101 and the metal source steam in the first chamber 101 can further react in the channel 105, so that the reaction conversion efficiency of the reaction gas and the metal source is effectively improved, and the growth rate, the growth quality and the product yield of crystals are improved to a certain extent.
Referring to fig. 4, the reaction chamber 10 may have two channels 105 therein. Wherein the inlet of a first channel 1051 of the two channels 105 is in communication with the first chamber 101, the outlet of the first channel 1051 is in communication with the inlet of a second channel 1052 of the two channels 105, the outlet of the second channel 1052 is in communication with the air outlet 30, and the inlet of the first channel 1051 is located on the same side of the reactor body 1 as the outlet of the second channel 1052. By having two channels 105 within the reaction chamber 10, the flow path within the reaction chamber 10 can be further increased, and since the inlet of the first channel 1051 and the outlet of the second channel 1052 are located on the same side of the reactor body 1, the occupation space of the first channel 1051 and the second channel 1052 within the reaction chamber 10 can also be saved to some extent.
In an embodiment of the present application, as shown in fig. 5, a flow blocking structure 106 may be further disposed in at least one channel 105, where the channel 105 has a first side wall, a second side wall, an upper bottom wall, and a lower bottom wall, the flow blocking structure 106 is fixedly connected to any one, any two, or any three of the first side wall, the second side wall, the upper bottom wall, and the lower bottom wall, and a second gap 107 is formed between the flow blocking structure 106 and at least one of the first side wall, the second side wall, the upper bottom wall, and the lower bottom wall. By providing the flow blocking structure 106 in at least one channel 105, a certain obstacle can be formed to the flow of the gas, the contact time of the reaction gas and the metal source is increased again, and the conversion efficiency of the metal precursor and the epitaxial growth quality of the crystal are improved.
Specifically, after the partially incompletely reacted reaction gas in the first chamber 101 and the metal source steam in the first chamber 101 enter the channel 105, the gas is blocked by the flow blocking structure 106 to form vortex, so that the gas can be prevented from flowing rapidly in the channel 105, the incompletely reacted reaction gas and the metal source steam can be effectively prevented from escaping, the partially incompletely reacted reaction gas and the metal source steam in the first chamber 101 can fully react again, and the gas generated after the full reaction flows out of the reaction chamber 10 through the second gap 107, so that the conversion rate and the crystal growth speed are ensured.
It will be appreciated that in the embodiment of the present application, the flow blocking structure 106 may be disposed only in the first channel 1051, the flow blocking structure 106 may be disposed only in the second channel 1052, and the flow blocking structure 106 may be disposed in both the first channel 1051 and the second channel 1052. Illustratively, as shown in fig. 6, the flow blocking structure 106 is disposed in both the first channel 1051 and the second channel 1052, thereby providing a better flow blocking effect.
In addition, the flow blocking structure 106 may be disposed at other positions in the reaction chamber 10 than the channels 105 (the first channel 1051 and the second channel 1052) to provide a flow blocking effect.
With continued reference to fig. 5 or 6, the flow blocking structure 106 may include at least one flow blocking body 1061, wherein the flow blocking body 1061 may be fixedly coupled to one of the upper and lower bottom walls of the channel 105 and the flow blocking body 1061 may form a second gap 107 with the other of the upper and lower bottom walls of the channel 105. In this way, after the partially incompletely reacted reaction gas in the first chamber 101 and the metal source vapor in the first chamber 101 enter the channel 105, since the flow blocking body 1061 is fixedly connected with one of the upper bottom wall and the lower bottom wall of the channel 105, the partially incompletely reacted reaction gas and the metal source vapor are blocked to form a vortex, so that the escape of the partially incompletely reacted reaction gas and the metal source vapor can be effectively prevented, the partially incompletely reacted reaction gas and the metal source vapor in the first chamber 101 can be more fully reacted, and then the gas generated after the fully reaction flows out of the reaction chamber 10 through the second gap 107 formed between the flow blocking body 1061 and the other of the upper bottom wall and the lower bottom wall of the channel 105, thereby ensuring the conversion rate and the crystal growth speed.
As an alternative embodiment, the number of the flow blocking bodies 1061 may be plural, and the plurality of flow blocking bodies 1061 may be spaced apart along the extending direction of the passage 105. By increasing the amount of the internal resistance fluid 1061 in the channel 105, the reaction gas and the metal source vapor which are not fully reacted can be further blocked, so that the escape of the reaction gas and the metal source vapor which are not fully reacted in the first chamber 101 can be more effectively prevented, and the reaction gas and the metal source vapor which are not fully reacted can be further fully reacted.
It will be appreciated that in embodiments of the present application, the specific configuration of the flow blocking body 1061 includes, but is not limited to, the following several possible implementations:
One possible implementation is that the blocking body 1061 has a cylindrical structure. For example, the flow blocking body 1061 may be a cylindrical structure (see fig. 5) or a prismatic structure (see fig. 7), which is not limited by the embodiment of the present application, and is not limited to the above examples.
Another possible implementation is that the blocking body 1061 has a conical configuration. For example, the flow resistor 1061 may be a cone structure.
Yet another possible implementation is that the flow blocking body 1061 is of a helical configuration. By arranging the fluid in a spiral structure, the contact area between the outer surface of the flow blocking body 1061 and the gas can be increased, and thus, the flow blocking body 1061 can perform a better blocking function on the gas.
Of course, in other possible implementations, the flow blocking body 1061 may also be a labyrinth-like rotating structure, and the specific arrangement of the labyrinth-like rotating structure is not limited by the embodiment of the present application, and is not limited to the above examples. Moreover, the shape of the reactor 100 is not limited in this embodiment, and the reactor 100 may be designed into a desired shape according to the connection or spatial arrangement of the reactor 100 and the external growth device, for example, the reactor 100 may be a cylinder, a cube, a cuboid, or the like. And, the volume of the reactor 100, the space of each chamber and the volume ratio thereof can be flexibly set according to the actual process requirements, which is not limited in the embodiment of the present application.
In addition, as an alternative embodiment, the axial direction of the flow blocking body 1061 may be perpendicular to the direction of extension of the channel 105. In this way, the blocking effect of the blocking body 1061 on the gas in the passage 105 can be further increased. Of course, in other embodiments, the axial direction of the flow blocking body 1061 may be parallel to the extending direction of the channel 105, or an angle formed between the axial direction of the flow blocking body 1061 and the extending direction of the channel 105 may be less than 90 degrees, i.e., the axial direction of the flow blocking body 1061 may be disposed obliquely with respect to the extending direction of the channel 105.
In addition, in the embodiment of the application, the metal source injection operation is simple, and the maintenance cost is reduced to a certain extent. That is, the metal source can be injected through the reaction gas inlet (i.e., the first gas inlet 201), and compared with the operation of taking out the quartz boat for injection or adopting pipeline injection in the prior art, the method has the advantages of high efficiency and convenience.
Example two
On the basis of the first embodiment, the embodiment of the present application provides a reactor 100, and the reactor 100 may be a group III metal source reactor. The metal source in the metal source reactor may be a group III metal.
In the embodiment of the present application, the gas introduced into the first gas inlet 201 of the group III metal source reactor may be a halide gas or a halogen gas. The halide gas may be any one or more of hydrogen chloride (HCl), hydrogen bromide (HBr) or Hydrogen Iodide (HI), and the halogen gas may be any one or more of chlorine (Cl 2), bromine (Br 2) or iodine (I 2). The gas introduced into the second gas inlet 202 of the group III metal source reactor may be any one or more of hydrogen, argon and nitrogen, for example, the gas introduced into the second gas inlet 202 may be a hydrogen-argon mixed gas.
It should be noted that, when the gas introduced into the first gas inlet 201 of the reactor 100 is a halide gas or a halogen gas, the material of the reactor 100 may be quartz or corundum. The material of the reactor 100 is not limited in the embodiment of the present application, so long as the reactor can resist high temperature and corrosion of halide gas or halogen gas, i.e., the reactor 100 can be prevented from being damaged or corroded by halide gas or halogen gas without being resistant to high temperature.
In one possible implementation, the quartz may be high purity quartz, among others.
In addition, the group III metal source reactor may specifically be a gallium source reactor, and the reaction chamber 10 of the reactor body 1 of the gallium source reactor has liquid gallium therein. During operation, as shown in fig. 8, the gallium source reactor enters the first chamber 101 from the first gas inlet 201, and reacts with liquid gallium in the first chamber 101 to generate gallium halide gas (such as gallium chloride, gallium bromide or gallium iodide). After the hydrogen, the argon or the nitrogen enters the first chamber 102 from the second air inlet 202 and is fully gathered in the second chamber 102, the hydrogen, the argon or the nitrogen is sprayed into the first chamber 101 through the flow control holes 103, a compact gas curtain layer is formed above the first chamber 101 (i.e. above the liquid level of the metal source in the first chamber 101), and halide gas or halogen gas is enabled to fully contact with liquid gallium in the first chamber 101, so that the reaction conversion efficiency of the halide gas or the halogen gas and the liquid gallium can be effectively improved.
In addition, in the direction that the halide gas or halogen gas flows from the side, close to the first gas inlet 201, in the first chamber 101 to the side, away from the first gas inlet 201, in the process, after the halide gas or halogen gas which is partially not fully reacted and gallium metal vapor in the first chamber 101 meet the second baffle 40, the halide gas or halogen gas is blocked by the second baffle 40 to return to form a vortex, so that the partially not fully reacted halide gas or halogen gas in the first chamber 101 can be fully contacted and reacted with the gallium metal vapor, and the gas generated after the reaction flows out through the first gap 50.
After the gallium halide gas, the residual incompletely reacted halide gas or the halogen gas generated by the reaction and the gallium metal vapor in the first chamber 101 enter the first channel 1051 and the second channel 1052 in sequence from the first chamber 101, vortex is blocked by the blocking body 1061, the incompletely reacted halide gas or the halogen gas and the gallium metal vapor can be effectively prevented from escaping, the incompletely reacted halide gas or the halogen gas and the gallium metal vapor in the first chamber 101 can be fully reacted, and then the gas generated by the fully reaction flows out of the channel 105 through the second gap 107 and then flows out of the gallium source reactor through the gas outlet 30, so that the reaction conversion rate of the halide gas or the halogen gas and the gallium metal vapor is ensured.
Furthermore, it should be noted that in other embodiments, the reactor 100 includes, but is not limited to, a group III metal source reactor, i.e., the reactor 100 may also be a group I metal source reactor or a group II metal source reactor. The embodiments of the present application are not limited thereto nor to the examples described above.
Example III
An embodiment of the present application provides a growth apparatus including at least a growth device and a reactor 100 in the first or second embodiment. Wherein the outlet of the reactor 100 is in communication with the inlet of the growth apparatus.
In the embodiment of the present application, the outlet of the reactor 100 may be connected to the outlet 30 of the reactor 100, or the outlet 30 of the reactor 100 may be the outlet of the reactor 100.
Taking the gas outlet 30 of the reactor 100 as the outlet of the reactor 100, the reactor 100 is a gallium source reactor, for example, a substrate is provided in the growth apparatus, and ammonia (NH 3) may be provided in the growth apparatus, and after the gallium halide gas (such as gallium chloride, gallium bromide or gallium iodide) flowing out of the gas outlet 30 of the reactor 100 enters the growth apparatus from the inlet of the growth apparatus, the gallium halide gas reacts with NH 3 in the growth apparatus to form a nitride semiconductor material (such as GaN single crystal material) on the surface of the substrate.
According to the growth device provided by the embodiment of the application, the growth device at least comprises growth equipment and a reactor 100, wherein the outlet of the reactor 100 is communicated with the inlet of the growth equipment, the first air inlet 201 is communicated with the first chamber 101, the second air inlet 202 is communicated with the second chamber 102 by arranging different air inlets 20 on the reactor body 1, and the first chamber 101 and the second chamber 102 are communicated through a plurality of flow control holes 103, so that the gas entering the second chamber 102 through the second air inlet 202 can be sprayed into the first chamber 101 through the plurality of flow control holes 103 to form a compact gas curtain layer, and the reaction gas entering the first chamber 101 through the second air inlet 202 can be enabled to be fully contacted with a metal source in the first chamber 101, thereby effectively improving the reaction conversion efficiency of the reaction gas and the metal source. The gas generated in the reactor 100 enters the inlet of the growth device from the gas outlet 30 to further react with substances in the growth device to generate crystals, and the reaction conversion efficiency of the reactor 100 is improved, so that the problem that the reaction gas does not completely react in the reactor and then enters the growth device can be avoided, and the growth rate of the crystals in the growth device, the quality stability and consistency of the crystals can be improved to a certain extent, and the mass production of epitaxial monocrystalline materials can be realized.
It will be appreciated that increasing the growth rate of crystals within the growth apparatus may reduce the cost of the process for growing crystals. By increasing the conversion rate of the reaction gas (halide gas or halogen gas) to gallium halide gas (e.g., gallium chloride, gallium bromide, or gallium iodide), an increase in the crystal growth rate can be achieved, thereby reducing the growth time and the manufacturing cost of the substrate.
The quality stability and consistency of crystals in a growth device can be improved by avoiding incomplete reaction of reaction gas in a reactor and subsequent entry of the reaction gas into growth equipment. By avoiding the mixing of the reaction gas and the metal source steam into the growth device along with the gallium halide gas, parasitic reaction and polycrystal growth in the growth device can be inhibited, and the problem that unreacted reaction gas can corrode crystal materials to interfere with crystal growth after entering the growth device and cause serious negative influence on the crystal quality of the materials is avoided, so that the quality stability and consistency of crystals in the growth device can be improved.
In describing embodiments of the present application, it should be noted that, unless explicitly stated or limited otherwise, the terms "mounted," "connected," and "coupled" should be construed broadly, and may be, for example, fixedly coupled, indirectly coupled through an intermediary, in communication between two elements, or in an interaction relationship between two elements. The specific meaning of the above terms in the embodiments of the present application will be understood by those of ordinary skill in the art according to specific circumstances.
The embodiments of the application may be implemented or realized in any number of ways, including as a matter of course, such that the apparatus or elements recited in the claims are not necessarily oriented or configured to operate in any particular manner. In the description of the embodiments of the present application, the meaning of "a plurality" is two or more unless specifically stated otherwise.
The terms first, second, third, fourth and the like in the description and in the claims and in the above-described figures, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the application described herein may be implemented, for example, in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that the foregoing embodiments are merely illustrative of and not limiting on the technical solutions of the embodiments of the present application, and although the embodiments of the present application have been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that the technical solutions described in the foregoing embodiments may be modified or some or all of the technical features may be equivalently replaced, and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims (24)

1.一种水平式HVPE反应器，其特征在于，至少包括：1. A horizontal HVPE reactor, characterized in that it comprises at least: 反应器本体；Reactor body; 所述反应器本体的内部具有反应腔室，且所述反应器本体上相对的两个侧壁上分别设有进气口和出气口，所述进气口和所述出气口均与所述反应腔室连通；The reactor body has a reaction chamber inside, and an air inlet and an air outlet are respectively provided on two opposite side walls of the reactor body, and the air inlet and the air outlet are connected to the reaction chamber. 所述反应腔室分隔为第一腔室和第二腔室，所述进气口包括第一进气口以及第二进气口，所述第一进气口和所述出气口分别与所述第一腔室连通，所述第二进气口与所述第二腔室连通；The reaction chamber is divided into a first chamber and a second chamber. The air inlet includes a first air inlet and a second air inlet. The first air inlet and the air outlet are respectively connected to the first chamber, and the second air inlet is connected to the second chamber. 且所述第一腔室和所述第二腔室之间具有多个控流通孔，以将所述第一腔室和所述第二腔室连通；每个所述控流通孔朝向所述第一腔室的一侧延伸形成有延伸部；Furthermore, a plurality of flow control holes are provided between the first chamber and the second chamber to connect the first chamber and the second chamber; each of the flow control holes extends to one side toward the first chamber and forms an extension portion; 所述控流通孔被配置为将所述第二腔室内的气体喷入所述第一腔室内，以使所述第一腔室内的反应气体与金属源的充分接触。The control orifice is configured to inject gas from the second chamber into the first chamber, so that the reactant gas in the first chamber comes into full contact with the metal source. 2.根据权利要求1所述的反应器，其特征在于，所述第二腔室位于所述第一腔室的上方。2. The reactor according to claim 1, wherein the second chamber is located above the first chamber. 3.根据权利要求1所述的反应器，其特征在于，所述第一腔室和所述第二腔室之间设置有第一挡板，所述第一挡板上具有多个所述控流通孔，以将所述第一腔室和所述第二腔室连通。3. The reactor according to claim 1, characterized in that a first baffle is provided between the first chamber and the second chamber, and the first baffle has a plurality of the control flow holes to connect the first chamber and the second chamber. 4.根据权利要求3所述的反应器，其特征在于，多个所述控流通孔均匀间隔分布在所述第一挡板上；4. The reactor according to claim 3, wherein the plurality of flow control holes are evenly spaced on the first baffle; 或者，多个所述控流通孔间隔分布在所述第一挡板上，且从所述第一挡板靠近所述进气口的一端至所述第一挡板靠近所述出气口的一端的方向上，所述控流通孔的密集程度逐渐增大；Alternatively, multiple flow control holes are spaced apart on the first baffle, and the density of the flow control holes gradually increases from the end of the first baffle near the air inlet to the end of the first baffle near the air outlet. 或者，多个所述控流通孔间隔分布在所述第一挡板上，且从所述第一挡板靠近所述进气口的一端至所述第一挡板靠近所述出气口的一端的方向上，所述控流通孔的密集程度逐渐减小。Alternatively, multiple flow control holes are spaced apart on the first baffle, and the density of the flow control holes gradually decreases from the end of the first baffle near the air inlet to the end of the first baffle near the air outlet. 5.根据权利要求3所述的反应器，其特征在于，所述控流通孔的直径为50nm-500um。5. The reactor according to claim 3, wherein the diameter of the control flow orifice is 50 nm-500 μm. 6.根据权利要求5所述的反应器，其特征在于，所述控流通孔的直径为20um-80um。6. The reactor according to claim 5, wherein the diameter of the flow control orifice is 20µm-80µm. 7.根据权利要求3的反应器，其特征在于，多个所述控流通孔中的相邻两个控流通孔之间的距离为1-3mm。7. The reactor according to claim 3, wherein the distance between two adjacent control orifices in the plurality of control orifices is 1-3 mm. 8.根据权利要求7所述的反应器，其特征在于，所述延伸部的延伸长度为1-3mm。8. The reactor according to claim 7, wherein the extension length of the extension portion is 1-3 mm. 9.根据权利要求1所述的反应器，其特征在于，所述反应腔室和所述出气口之间设置有第二挡板；9. The reactor according to claim 1, characterized in that a second baffle is provided between the reaction chamber and the gas outlet; 所述第二挡板的一端与所述反应器本体的下底壁相连，所述第二挡板的另一端与所述反应器本体的上底壁之间形成第一间隙。One end of the second baffle is connected to the lower bottom wall of the reactor body, and the other end of the second baffle forms a first gap with the upper bottom wall of the reactor body. 10.根据权利要求1-9任一所述的反应器，其特征在于，所述反应腔室内还具有至少一个通道，所述通道的入口与所述第一腔室相连通，所述通道的出口与所述出气口相连通。10. The reactor according to any one of claims 1-9, characterized in that the reaction chamber further comprises at least one channel, the inlet of the channel being connected to the first chamber, and the outlet of the channel being connected to the gas outlet. 11.根据权利要求10所述的反应器，其特征在于，所述反应腔室内具有两个所述通道；11. The reactor according to claim 10, characterized in that the reaction chamber has two channels; 两个所述通道中的第一通道的入口与所述第一腔室连通，所述第一通道的出口与两个所述通道中的第二通道的入口相连通，所述第二通道的出口与所述出气口连通；The inlet of the first channel of the two channels is connected to the first chamber, the outlet of the first channel is connected to the inlet of the second channel of the two channels, and the outlet of the second channel is connected to the air outlet. 且所述第一通道的入口与所述第二通道的出口位于所述反应器本体的同一侧。Furthermore, the inlet of the first channel and the outlet of the second channel are located on the same side of the reactor body. 12.根据权利要求10所述的反应器，其特征在于，至少一个所述通道内设置有阻流结构；所述通道具有第一侧壁、第二侧壁、上底壁以及下底壁；12. The reactor according to claim 10, characterized in that at least one of the channels is provided with a flow-blocking structure; the channel has a first sidewall, a second sidewall, an upper bottom wall and a lower bottom wall; 所述阻流结构与所述第一侧壁、所述第二侧壁、所述上底壁和所述下底壁中的任意一者、任意两者或任意三者固定相连，所述阻流结构与所述第一侧壁、所述第二侧壁、所述上底壁和所述下底壁中的至少一者之间形成有第二间隙。The flow-blocking structure is fixedly connected to any one, any two, or any three of the first sidewall, the second sidewall, the upper bottom wall, and the lower bottom wall, and a second gap is formed between the flow-blocking structure and at least one of the first sidewall, the second sidewall, the upper bottom wall, and the lower bottom wall. 13.根据权利要求12所述的反应器，其特征在于，所述阻流结构包括：至少一个阻流体；13. The reactor according to claim 12, wherein the flow-blocking structure comprises: at least one flow-blocking material; 所述阻流体与所述通道的上底壁和下底壁中的其中一者固定相连，所述阻流体与所述通道的所述上底壁和所述下底壁中的另一者之间形成所述第二间隙。The fluid barrier is fixedly connected to one of the upper and lower bottom walls of the channel, and a second gap is formed between the fluid barrier and the other of the upper and lower bottom walls of the channel. 14.根据权利要求13所述的反应器，其特征在于，所述阻流体的数量为多个；多个所述阻流体沿着所述通道的延伸方向间隔分布。14. The reactor according to claim 13, wherein the number of the resistance fluids is plurality; the plurality of resistance fluids are distributed at intervals along the extension direction of the channel. 15.根据权利要求13所述的反应器，其特征在于，所述阻流体为柱状结构。15. The reactor according to claim 13, wherein the flow-blocking fluid has a columnar structure. 16.根据权利要求13所述的反应器，其特征在于，所述阻流体为螺旋状结构。16. The reactor according to claim 13, wherein the flow-blocking fluid has a helical structure. 17.根据权利要求13所述的反应器，其特征在于，所述阻流体的轴向方向与所述通道的延伸方向相垂直。17. The reactor according to claim 13, wherein the axial direction of the obstructing fluid is perpendicular to the extension direction of the channel. 18.根据权利要求1所述的反应器，其特征在于，所述反应器为III族金属源反应器。18. The reactor according to claim 1, wherein the reactor is a group III metal source reactor. 19.根据权利要求18所述的反应器，其特征在于，所述反应器为镓源反应器。19. The reactor according to claim 18, wherein the reactor is a gallium source reactor. 20.根据权利要求19所述的反应器，其特征在于，所述反应器本体的所述反应腔室内具有液态镓。20. The reactor according to claim 19, wherein the reaction chamber of the reactor body contains liquid gallium. 21.根据权利要求18所述的反应器，其特征在于，所述反应器的第一进气口通入的气体为卤化物气体或卤素气体。21. The reactor according to claim 18, wherein the gas introduced into the first inlet of the reactor is a halide gas or a halogen gas. 22.根据权利要求21所述的反应器，其特征在于，当所述反应器的所述第一进气口通入的气体为卤化物气体或卤素气体时，所述反应器的材质为石英或刚玉。22. The reactor according to claim 21, wherein when the gas introduced into the first air inlet of the reactor is a halide gas or a halogen gas, the reactor is made of quartz or corundum. 23.根据权利要求18所述的反应器，其特征在于，所述反应器的第二进气口通入的气体为氢气、氩气和氮气中的任意一种或多种。23. The reactor according to claim 18, wherein the gas introduced into the second inlet of the reactor is any one or more of hydrogen, argon and nitrogen. 24.一种生长装置，其特征在于，至少包括：生长设备以及上述权利要求1-23任一所述的反应器；其中，所述反应器的出口与所述生长设备的入口相连通。24. A growth apparatus, characterized in that it comprises at least: a growth device and a reactor as described in any one of claims 1-23; wherein the outlet of the reactor is connected to the inlet of the growth device.
CN202080108140.4A 2020-12-24 2020-12-24 Reactor and growth device Active CN117062945B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/139144 WO2022133943A1 (en) 2020-12-24 2020-12-24 Reactor and growth device

Publications (2)

Publication Number Publication Date
CN117062945A CN117062945A (en) 2023-11-14
CN117062945B true CN117062945B (en) 2025-11-18

Family

ID=82157181

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080108140.4A Active CN117062945B (en) 2020-12-24 2020-12-24 Reactor and growth device

Country Status (2)

Country Link
CN (1) CN117062945B (en)
WO (1) WO2022133943A1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101006548A (en) * 2004-06-30 2007-07-25 王望南 Deposition technique for producing high quality compound semiconductor materials

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10301949A1 (en) * 2003-01-20 2004-07-29 Siced Electronics Development Gmbh & Co. Kg CVD reactor for producing a silicon carbide single crystalline layer comprises a reaction chamber, a susceptor arranged in the reaction chamber, and a gas inlet with a diffuser and a homogenizing unit
US7297719B2 (en) * 2006-03-29 2007-11-20 Tokyo Electron Limited Method and integrated system for purifying and delivering a metal carbonyl precursor
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
US7976631B2 (en) * 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
JP2012248803A (en) * 2011-05-31 2012-12-13 Hitachi Cable Ltd Metal chloride gas generator and metal chloride gas generation method, and hydride vapor phase epitaxial growth apparatus, nitride semiconductor wafer, nitride semiconductor device, wafer for nitride semiconductor light-emitting diode, manufacturing method of nitride semiconductor self-supporting substrate, and nitride semiconductor crystal
CN204138762U (en) * 2014-08-06 2015-02-04 上海世山科技有限公司 The gas mixer of a kind of HVPE
CN105986314B (en) * 2015-02-05 2018-06-08 东莞市中镓半导体科技有限公司 Reactor for vapor phase epitaxial growth of semiconductor single crystal material
CN104878450A (en) * 2015-05-14 2015-09-02 中国科学院半导体研究所 AlN single crystal substrate production apparatus and application method thereof
CN106191989B (en) * 2016-07-30 2019-02-12 东莞市中镓半导体科技有限公司 Gallium boat reactor for HVPE equipment
EP3740306A4 (en) * 2018-01-15 2021-10-13 Alliance for Sustainable Energy, LLC HYDRID-EXTENDED GROWTH RATES IN HYDRID VAPOR PHASE EPITAXY

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101006548A (en) * 2004-06-30 2007-07-25 王望南 Deposition technique for producing high quality compound semiconductor materials

Also Published As

Publication number Publication date
CN117062945A (en) 2023-11-14
WO2022133943A1 (en) 2022-06-30

Similar Documents

Publication Publication Date Title
CN101423937B (en) Multi-gas concentric injection showerhead
US9644267B2 (en) Multi-gas straight channel showerhead
US20100263588A1 (en) Methods and apparatus for epitaxial growth of semiconductor materials
KR101064210B1 (en) Shower head for membrane deposition vacuum equipment
CN103014846A (en) A Concentric Ring Nozzle Structure for Material Vapor Phase Epitaxy
CN102492937A (en) Inlet spray head used for reaction chamber of metal chemical vapor deposition equipment
JP4865672B2 (en) Vapor phase growth apparatus and semiconductor device manufacturing method
KR20120083495A (en) Vapor deposition device, vapor deposition method, and semiconductor element manufacturing method
TWI590300B (en) Wafer tray for MOCVD reaction system
CN101560650B (en) Multiple spray header chemical vapor deposition reaction chamber structure
CN102534563A (en) Inclined entering gas spray header applied to metal organic chemical vapor deposition reactor
JP2010084190A (en) Vapor deposition system and vapor deposition method
CN106811736A (en) A kind of chemical vapor deposition unit
US7011711B2 (en) Chemical vapor deposition reactor
CN104264128B (en) A kind of grating type distribution device in gas-fluid for MOCVD reactors
JP5143689B2 (en) Vapor phase growth apparatus and semiconductor device manufacturing method
CN103060906B (en) A kind of Square spray nozzle structure for vapor phase epitaxy of material
CN117062945B (en) Reactor and growth device
CN112126976B (en) Gallium boat structure for hydride gas phase epitaxy
JP2010238831A (en) Vapor growth apparatus and vapor growth method
KR100484945B1 (en) Semiconductor device fabrication apparatus having multi-hole angled gas injection system
CN105986314A (en) A reactor for vapor phase epitaxial growth of semiconductor single crystal material
CN206418196U (en) A kind of even gas upper lower burrs components of the MOCVD of H types shower nozzle
KR100944186B1 (en) Gas injection units of chemical vapor deposition chamber
CN117529583A (en) Reaction device, growth device and growth equipment

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant