CN1176496C - 半导体装置及其制作方法 - Google Patents

半导体装置及其制作方法 Download PDF

Info

Publication number
CN1176496C
CN1176496C CNB011439629A CN01143962A CN1176496C CN 1176496 C CN1176496 C CN 1176496C CN B011439629 A CNB011439629 A CN B011439629A CN 01143962 A CN01143962 A CN 01143962A CN 1176496 C CN1176496 C CN 1176496C
Authority
CN
China
Prior art keywords
semiconductor device
circuit pattern
image sensing
state image
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB011439629A
Other languages
English (en)
Chinese (zh)
Other versions
CN1373519A (zh
Inventor
誉田敏幸
辻和人
־
小野寺正德
青木广志
小林泉
森屋晋
海谷宽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of CN1373519A publication Critical patent/CN1373519A/zh
Application granted granted Critical
Publication of CN1176496C publication Critical patent/CN1176496C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/54Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/55Optical parts specially adapted for electronic image sensors; Mounting thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/804Containers or encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • H10F77/407Optical elements or arrangements indirectly associated with the devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/93Interconnections
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N7/00Television systems
    • H04N7/14Systems for two-way working
    • H04N7/141Systems for two-way working between two video terminals, e.g. videophone
    • H04N7/142Constructional details of the terminal equipment, e.g. arrangements of the camera and the display
    • H04N2007/145Handheld terminals
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0284Details of three-dimensional rigid printed circuit boards
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H05K3/205Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007Surface contacts, e.g. bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CNB011439629A 2001-02-28 2001-12-27 半导体装置及其制作方法 Expired - Fee Related CN1176496C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001055735 2001-02-28
JP055735/2001 2001-02-28
JP315672/2001 2001-10-12
JP2001315672 2001-10-12

Publications (2)

Publication Number Publication Date
CN1373519A CN1373519A (zh) 2002-10-09
CN1176496C true CN1176496C (zh) 2004-11-17

Family

ID=26610367

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB011439629A Expired - Fee Related CN1176496C (zh) 2001-02-28 2001-12-27 半导体装置及其制作方法

Country Status (6)

Country Link
US (1) US20020119658A1 (fr)
EP (2) EP2261993B1 (fr)
JP (1) JP3695583B2 (fr)
KR (1) KR100735806B1 (fr)
CN (1) CN1176496C (fr)
TW (1) TW548843B (fr)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345899A (ja) * 2000-05-30 2001-12-14 Olympus Optical Co Ltd 携帯型無線電話機
JP2004103860A (ja) 2002-09-10 2004-04-02 Fujitsu Ltd 半導体装置、カメラモジュール及びその製造方法
JP3768972B2 (ja) 2003-04-28 2006-04-19 松下電器産業株式会社 固体撮像装置およびその製造方法
EP1509070A3 (fr) * 2003-08-22 2007-04-25 Tyco Electronics Nederland B.V. Procédé de fabrication d'un élément conducteur électrique et élément conducteur électrique
AU2003268702A1 (en) * 2003-09-30 2005-04-21 Fujitsu Limited Camera module
JP4170950B2 (ja) 2003-10-10 2008-10-22 松下電器産業株式会社 光学デバイスおよびその製造方法
FR2861217B1 (fr) * 2003-10-21 2006-03-17 St Microelectronics Sa Dispositif optique pour boitier semi-conducteur optique et procede de fabrication.
JP4561143B2 (ja) * 2004-03-26 2010-10-13 パナソニック株式会社 撮像装置
JP2005345571A (ja) * 2004-05-31 2005-12-15 Canon Inc 撮像装置および電子機器
CN100512379C (zh) * 2004-07-28 2009-07-08 富士通微电子株式会社 摄像装置和半导体装置
FR2875055B1 (fr) * 2004-09-06 2006-12-01 Kingpak Tech Inc Structure de module de capteur d'image
KR100691436B1 (ko) * 2005-11-01 2007-03-09 삼성전기주식회사 이미지센서 모듈 및 이를 이용한 카메라 모듈
JP2007194930A (ja) * 2006-01-19 2007-08-02 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
KR100831710B1 (ko) 2006-08-17 2008-05-22 삼성전기주식회사 카메라 모듈의 조립 장치 및 그 조립 방법
JP4663667B2 (ja) * 2007-03-08 2011-04-06 パナソニック株式会社 撮像装置、その製造方法および携帯端末装置
WO2008093830A1 (fr) * 2007-02-02 2008-08-07 Panasonic Corporation Dispositif d'imagerie, procédé de fabrication du dispositif d'imagerie et dispositif de terminal portable
JP4712737B2 (ja) * 2007-02-02 2011-06-29 パナソニック株式会社 撮像装置、その製造方法および携帯端末装置
JP4663666B2 (ja) * 2007-03-08 2011-04-06 パナソニック株式会社 撮像装置、その製造方法および携帯端末装置
EP2524264A4 (fr) * 2010-01-11 2014-02-19 Flextronics Ap Llc Module d'appareil photo équipé d'une monture d'imageur à puces retournées sur bande moulée et procédé de fabrication
JP5499996B2 (ja) * 2010-08-27 2014-05-21 株式会社ニコン 撮像装置
US9224779B2 (en) 2010-08-27 2015-12-29 Nikon Corporation Imaging apparatus with sensor chip and separate signal processing chips
JP4908620B2 (ja) 2010-09-07 2012-04-04 株式会社東芝 テレビジョン受像機及び電子機器
JP5703899B2 (ja) 2010-12-28 2015-04-22 株式会社リコー 測距装置
US9197796B2 (en) 2011-11-23 2015-11-24 Lg Innotek Co., Ltd. Camera module
US10197716B2 (en) 2012-12-19 2019-02-05 Viavi Solutions Inc. Metal-dielectric optical filter, sensor device, and fabrication method
JP6502925B2 (ja) * 2014-04-23 2019-04-17 京セラ株式会社 電子素子実装用基板および電子装置
TWI776471B (zh) * 2014-06-18 2022-09-01 美商唯亞威方案公司 用於製造光學濾光器之方法及光學裝置
CN105282403B (zh) * 2014-07-07 2019-08-23 宁波舜宇光电信息有限公司 一种控制摄像模组解像力均匀性的方法及摄像模组
JP6506034B2 (ja) * 2015-01-29 2019-04-24 京セラ株式会社 電子素子実装用基板および電子装置
EP4622279A1 (fr) 2016-02-18 2025-09-24 Ningbo Sunny Opotech Co., Ltd. Module de caméra basé sur un processus d'encapsulation intégrale, composant de base intégrale de celui-ci, et son procédé de fabrication
CN106060727A (zh) * 2016-06-07 2016-10-26 广东欧珀移动通信有限公司 扬声器组件及移动终端
KR20190020096A (ko) 2016-07-03 2019-02-27 닝보 써니 오포테크 코., 엘티디. 감광성 부품과 카메라 모듈 및 그 제조방법
US10321028B2 (en) 2016-07-03 2019-06-11 Ningbo Sunny Opotech Co., Ltd. Photosensitive assembly and camera module and manufacturing method thereof
JP6770853B2 (ja) * 2016-08-31 2020-10-21 新光電気工業株式会社 リードフレーム及び電子部品装置とそれらの製造方法
US11233079B2 (en) * 2017-05-18 2022-01-25 Ningbo Sunny Opotech Co., Ltd. Camera module and molded circuit board assembly thereof, array camera module and electronic device
WO2019026462A1 (fr) * 2017-08-03 2019-02-07 シャープ株式会社 Module de caméra et procédé de fabrication de module de caméra
CN111866322A (zh) 2019-04-30 2020-10-30 宁波舜宇光电信息有限公司 摄像模组及其感光组件、电子设备和制备方法
US20220262841A1 (en) * 2019-07-23 2022-08-18 Sony Semiconductor Solutions Corporation Semiconductor package, electronic device, and method of manufacturing semiconductor package
KR102883728B1 (ko) * 2020-01-29 2025-11-11 엘지이노텍 주식회사 카메라 모듈
KR20220023162A (ko) * 2020-08-20 2022-03-02 엘지이노텍 주식회사 카메라 모듈 및 이의 제조 방법
JP2023141666A (ja) * 2022-03-24 2023-10-05 日本ケミコン株式会社 センサモジュール、その製造方法およびセンサシステム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2901356B2 (ja) * 1991-02-07 1999-06-07 日本電気株式会社 混成集積回路
JP3207319B2 (ja) * 1993-05-28 2001-09-10 株式会社東芝 光電変換装置及びその製造方法
US5976912A (en) * 1994-03-18 1999-11-02 Hitachi Chemical Company, Ltd. Fabrication process of semiconductor package and semiconductor package
JPH11164209A (ja) * 1997-11-25 1999-06-18 Toshiba Corp 固体撮像素子の取付装置
JP3836235B2 (ja) * 1997-12-25 2006-10-25 松下電器産業株式会社 固体撮像装置及びその製造方法
JP3582634B2 (ja) * 1998-04-10 2004-10-27 松下電器産業株式会社 固体撮像装置
JP2000049319A (ja) * 1998-07-27 2000-02-18 Olympus Optical Co Ltd 固体撮像装置
JP2000269472A (ja) * 1999-03-15 2000-09-29 Canon Inc 撮像装置
US6147389A (en) * 1999-06-04 2000-11-14 Silicon Film Technologies, Inc. Image sensor package with image plane reference
JP2001008068A (ja) * 1999-06-25 2001-01-12 Keihin Art Work:Kk 投影面積を小さくし立体化したセンサモジュール

Also Published As

Publication number Publication date
KR20020070773A (ko) 2002-09-11
JP2003189195A (ja) 2003-07-04
EP1237202B1 (fr) 2012-02-01
US20020119658A1 (en) 2002-08-29
JP3695583B2 (ja) 2005-09-14
EP1237202A3 (fr) 2004-12-08
TW548843B (en) 2003-08-21
CN1373519A (zh) 2002-10-09
EP2261993A2 (fr) 2010-12-15
EP2261993A3 (fr) 2012-07-11
EP2261993B1 (fr) 2014-12-31
KR100735806B1 (ko) 2007-07-06
EP1237202A2 (fr) 2002-09-04

Similar Documents

Publication Publication Date Title
CN1176496C (zh) 半导体装置及其制作方法
CN212211129U (zh) 摄像头模组及电子设备
CN102782574B (zh) 具有成型带倒装成像器底座的照相机模块及制造方法
CN1157052C (zh) 摄像装置及其制造方法,以及电气设备
JP5814962B2 (ja) 底部にキャビティを備えるウエハーレベル光学部品とフリップチップ組立を用いた小型フォームファクタモジュール
CN100342281C (zh) 照相机模块
CN101064329A (zh) 光学器件和使用该光学器件的光学模块
CN1423477A (zh) 固态成像装置及其制作方法
CN1264037C (zh) 光学模块及其制造方法和电子仪器
CN1519948A (zh) 半导体晶片,固态成像器件和光学器件模块及二者的制造方法
CN1832163A (zh) 摄像模块及其制造方法
CN1601752A (zh) 制造固态图像传感器件的方法
CN1783950A (zh) 小型摄像组件
CN1697190A (zh) 光学器件及其制造方法
CN101055866A (zh) 光学装置用模块和光学装置用模块的制造方法
CN1476100A (zh) 摄像机模块及其制造方法
JP2009512346A (ja) ウェハー基板付カメラモジュール及び製造方法
CN1722453A (zh) 成像和电子装置
CN1707777A (zh) 半导体器件及其制作方法和光学器件模块
CN1591884A (zh) 固态象传感装置的制造方法
CN1348328A (zh) 半导体器件和半导体模块
US8951858B2 (en) Imager device with electric connections to electrical device
JP2003078077A (ja) カメラモジュール
CN1704788A (zh) 摄像器件和电子装置
CN114666466A (zh) 摄像模组和电子设备

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20090206

Address after: Tokyo, Japan

Patentee after: FUJITSU MICROELECTRONICS Ltd.

Address before: Kanagawa, Japan

Patentee before: Fujitsu Ltd.

ASS Succession or assignment of patent right

Owner name: FUJITSU MICROELECTRONICS CO., LTD.

Free format text: FORMER OWNER: FUJITSU LIMITED

Effective date: 20090206

C56 Change in the name or address of the patentee

Owner name: FUJITSU SEMICONDUCTOR CO., LTD.

Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: Kanagawa

Patentee after: FUJITSU MICROELECTRONICS Ltd.

Address before: Kanagawa

Patentee before: Fujitsu Microelectronics Ltd.

CP02 Change in the address of a patent holder

Address after: Kanagawa

Patentee after: Fujitsu Microelectronics Ltd.

Address before: Tokyo, Japan

Patentee before: Fujitsu Microelectronics Ltd.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20041117

Termination date: 20181227

CF01 Termination of patent right due to non-payment of annual fee