CN117820005A - Flat seal structure assembly of flat seal structure porcelain seal piece and high-precision sealing method thereof - Google Patents
Flat seal structure assembly of flat seal structure porcelain seal piece and high-precision sealing method thereof Download PDFInfo
- Publication number
- CN117820005A CN117820005A CN202311829710.0A CN202311829710A CN117820005A CN 117820005 A CN117820005 A CN 117820005A CN 202311829710 A CN202311829710 A CN 202311829710A CN 117820005 A CN117820005 A CN 117820005A
- Authority
- CN
- China
- Prior art keywords
- film
- ceramic
- flat
- porcelain
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
- C04B41/90—Coating or impregnation for obtaining at least two superposed coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/122—Metallic interlayers based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/124—Metallic interlayers based on copper
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
Description
技术领域Technical Field
本发明涉及陶瓷封装体技术领域,具体为平封结构瓷封件的平封结构组件及其高精度封接方法。The invention relates to the technical field of ceramic packaging bodies, in particular to a flat sealing structure component of a flat sealing structure ceramic sealing piece and a high-precision sealing method thereof.
背景技术Background technique
真空电子器件广泛应用于广播、通信、电视、雷达、导航、医学诊断等领域。伴随整机系统的性能提升,对真空电子器件的性能提出了更高要求,需实现高效率、长寿命以及大功率等指标提升。陶瓷与金属封接结构件作为真空电子器件内部的绝缘结构件,在满足各极耐压的前提下,需确保各极间距达到设计要求,确保电子轨迹满足设计要求,以保障功率和效率等指标。现有平封结构瓷封件封接前后高度尺寸变化较大,对电子枪内电子注形状产生了较大影响,由于这些问题的存在导致真空电子器件效率和功率进一步提升受阻。Vacuum electronic devices are widely used in broadcasting, communications, television, radar, navigation, medical diagnosis and other fields. With the improvement of the performance of the whole system, higher requirements are placed on the performance of vacuum electronic devices, and it is necessary to achieve improvement in indicators such as high efficiency, long life and high power. Ceramic and metal sealing structures are insulating structures inside vacuum electronic devices. On the premise of meeting the voltage resistance of each pole, it is necessary to ensure that the distance between each pole meets the design requirements and that the electron trajectory meets the design requirements to ensure indicators such as power and efficiency. The height dimension of the existing flat-seal structure porcelain seal changes greatly before and after sealing, which has a great impact on the shape of electron injection in the electron gun. Due to the existence of these problems, the further improvement of the efficiency and power of vacuum electronic devices is hindered.
经过技术调研以及开展工艺研究发现,采用先进的薄膜金属化技术,合理选择膜层种类并结合适宜的热处理温度,能够实现平封结构瓷封件的高精度连接。After technical investigation and process research, it was found that the use of advanced thin film metallization technology, the rational selection of film layer types and the combination of appropriate heat treatment temperatures can achieve high-precision connection of flat-seal structure porcelain seals.
发明内容Summary of the invention
针对现有技术的不足,本发明提供了平封结构瓷封件的平封结构组件及其高精度封接方法,目的是为了解决封接前后高度方向的变化量过大问题,提高了实际封接尺寸与设计值之间的符合度,提升了真空电子器件极间距一致性、耐压可靠性,有助于提升整管效率和功率等指标。In view of the shortcomings of the prior art, the present invention provides a flat-seal structure component of a flat-seal structure porcelain seal and a high-precision sealing method thereof, with the aim of solving the problem of excessive change in height direction before and after sealing, improving the conformity between actual sealing dimensions and design values, improving the consistency of inter-electrode spacing and pressure-resistant reliability of vacuum electronic devices, and helping to improve indicators such as overall tube efficiency and power.
为实现以上目的,本发明通过以下技术方案予以实现:平封结构瓷封件的高精度封接方法,包括以下方法步骤:To achieve the above objectives, the present invention is implemented through the following technical solutions: A high-precision sealing method for a flat-seal structure porcelain seal comprises the following method steps:
S1、在陶瓷上、下端面首先镀覆Ti膜实现金属化,其中Ti膜作为陶瓷金属化的基础膜;S1, firstly coating the upper and lower end surfaces of the ceramic with a Ti film to achieve metallization, wherein the Ti film serves as a base film for ceramic metallization;
S2、将镀覆后的瓷件在真空气氛环境下加热保温处理,提升Ti膜层与陶瓷结合力,避免膜层起皮、脱落,满足后续封接强度要求;S2, heating and heat-insulating the plated ceramic parts in a vacuum atmosphere to enhance the bonding strength between the Ti film layer and the ceramic, prevent the film layer from peeling and falling off, and meet the subsequent sealing strength requirements;
S3、在瓷件的上、下端面先后镀覆Cu膜、Ag膜;S3, coating the upper and lower end surfaces of the ceramic component with a Cu film and an Ag film in sequence;
S4、覆膜后陶瓷与金属件在专用平封结构组件夹持固定后在真空炉下加热并保温一段时间,使得Cu薄膜、Ag薄膜中的原子之间相互扩散形成银铜共晶合金焊料。S4. After coating, the ceramic and metal parts are clamped and fixed in a special flat sealing structure assembly, and then heated and kept warm for a period of time in a vacuum furnace, so that the atoms in the Cu film and the Ag film diffuse with each other to form a silver-copper eutectic alloy solder.
优选的,所述S1步骤中,陶瓷上、下端面T i膜的镀覆厚度为2±0.2μm。Preferably, in the step S1, the coating thickness of the Ti film on the upper and lower end surfaces of the ceramic is 2±0.2 μm.
优选的,所述S2步骤中,瓷件在真空气氛环境下的加热温度为700℃,保温时间为5min。Preferably, in step S2, the heating temperature of the ceramic piece in a vacuum atmosphere is 700° C., and the holding time is 5 minutes.
优选的,所述S3步骤中,Cu膜的镀覆厚度为1±0.2μm,Ag膜的镀覆厚度为2±0.2μm。Preferably, in the step S3, the plating thickness of the Cu film is 1±0.2 μm, and the plating thickness of the Ag film is 2±0.2 μm.
优选的,所述S4步骤中,真空炉内加热到800℃保温10min,升温速率≤500℃/h,降温速率≤300℃/h,真空度控制优于1×10-3Pa。Preferably, in the step S4, the vacuum furnace is heated to 800°C and kept warm for 10 min, the heating rate is ≤500°C/h, the cooling rate is ≤300°C/h, and the vacuum degree is controlled to be better than 1×10-3Pa.
平封结构瓷封件的平封结构组件,包括上模具和下模具,所述上模具与下模具之间安装有枪壳组件,所述下模具的一侧安装有螺杆,所述螺杆的顶端穿过上模具的一侧并伸出一部分,所述螺杆的外壁上螺纹连接有螺母。The flat seal structure component of the flat seal structure porcelain seal comprises an upper mold and a lower mold, a gun housing component is installed between the upper mold and the lower mold, a screw is installed on one side of the lower mold, the top end of the screw passes through one side of the upper mold and extends out a part, and a nut is threadedly connected on the outer wall of the screw.
本发明提供了平封结构瓷封件的平封结构组件及其高精度封接方法。具备以下有益效果:The present invention provides a flat seal structure component of a flat seal structure porcelain seal and a high-precision sealing method thereof. It has the following beneficial effects:
本发明通过将陶瓷在镀T i膜实现金属化后镀覆μm级别Cu、Ag金属薄膜,作为过渡液相扩散焊的反应膜层,装配的陶瓷与金属封接组件在真空气氛下800℃保温10min,Cu薄膜、Ag薄膜中的原子之间发生扩散形成共晶合金焊料,实现了过渡液相扩散焊,显著改善了组件封接前后高度方向的变化量,单道焊缝高度方向变化量从原有的20~30μm缩小到4μm,实现了高精度封接效果,提升了真空电子器件平封结构瓷封件各极间距控制一致性。The present invention plates Cu and Ag metal films of μm level on ceramics after metallization by Ti film as reaction film layers for transitional liquid phase diffusion welding. The assembled ceramic and metal sealing components are kept at 800°C for 10 minutes in a vacuum atmosphere. Atoms in the Cu film and the Ag film diffuse to form eutectic alloy solder, thus realizing transitional liquid phase diffusion welding. The change in height direction before and after sealing of the components is significantly improved, and the change in height direction of a single weld is reduced from the original 20 to 30 μm to 4 μm, thereby realizing a high-precision sealing effect and improving the control consistency of the inter-electrode spacing of porcelain seals of a flat-sealed structure of vacuum electronic devices.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为本发明的平封结构组件装配示意图;FIG1 is a schematic diagram of the assembly of a flat seal structure assembly of the present invention;
图2为本发明的镀覆膜层的瓷件示意图。FIG. 2 is a schematic diagram of a ceramic component with a coating layer according to the present invention.
其中,1、螺杆;2、螺母;3、上模具;4、下模具;5、枪壳组件。Among them, 1. screw; 2. nut; 3. upper mold; 4. lower mold; 5. gun housing assembly.
具体实施方式Detailed ways
下面将结合本发明说明书附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The following will be combined with the drawings of the present invention specification to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
请参阅附图1-附图2,本发明提供平封结构瓷封件的高精度封接方法,包括以下方法步骤:Please refer to Figures 1-2, the present invention provides a high-precision sealing method for a flat-seal structure porcelain seal, including the following method steps:
S1、在陶瓷上、下端面首先镀覆Ti膜实现金属化,其中Ti膜作为陶瓷金属化的基础膜,对保障瓷封组件的封接质量非常关键,在此步骤中,陶瓷上、下端面Ti膜的镀覆厚度为2±0.2μm;S1. First, Ti film is plated on the upper and lower end surfaces of the ceramic to achieve metallization. The Ti film is used as the base film for ceramic metallization and is very critical to ensure the sealing quality of the ceramic sealing component. In this step, the plating thickness of the Ti film on the upper and lower end surfaces of the ceramic is 2±0.2μm;
S2、将镀覆后的瓷件在真空气氛环境下加热保温处理,提升Ti膜层与陶瓷结合力,避免膜层起皮、脱落,满足后续封接强度要求,在此步骤中,瓷件在真空气氛环境下的加热温度为700℃,保温时间为5min;S2, heating and heat-insulating the plated ceramic piece in a vacuum atmosphere to enhance the bonding strength between the Ti film layer and the ceramic, prevent the film layer from peeling and falling off, and meet the subsequent sealing strength requirements. In this step, the heating temperature of the ceramic piece in a vacuum atmosphere is 700° C., and the heat preservation time is 5 minutes;
S3、请参阅附图2所示,在瓷件的上、下端面先后镀覆Cu膜、Ag膜,在此步骤中,Cu膜的镀覆厚度为1±0.2μm,Ag膜的镀覆厚度为2±0.2μm;S3, as shown in FIG. 2, Cu film and Ag film are plated on the upper and lower end surfaces of the ceramic component in sequence. In this step, the plating thickness of the Cu film is 1±0.2 μm, and the plating thickness of the Ag film is 2±0.2 μm;
S4、请参阅附图1所示,覆膜后陶瓷与金属件在专用平封结构组件夹持固定后在真空炉下加热并保温一段时间,使得Cu薄膜、Ag薄膜中的原子之间相互扩散形成银铜共晶合金焊料,在此步骤中,真空炉内加热到800℃保温10min,升温速率≤500℃/h,降温速率≤300℃/h,真空度控制优于1×10-3Pa。S4. Please refer to Figure 1. After the coating, the ceramic and metal parts are clamped and fixed in a special flat sealing structure component, and then heated and kept warm for a period of time in a vacuum furnace, so that the atoms in the Cu film and the Ag film diffuse with each other to form a silver-copper eutectic alloy solder. In this step, the vacuum furnace is heated to 800°C and kept warm for 10 minutes, the heating rate is ≤500°C/h, the cooling rate is ≤300°C/h, and the vacuum degree is controlled to be better than 1×10-3Pa.
进一步地,本发明实施例还提供了一种平封结构瓷封件的平封结构组件,应用于本实施例中所提到的平封结构瓷封件的高精度封接方法,该结构组件包括上模具3和下模具4,上模具3与下模具4之间安装有枪壳组件5,下模具4的一侧安装有螺杆1,螺杆1的顶端穿过上模具3的一侧并伸出一部分,螺杆1的外壁上螺纹连接有螺母2,其中,螺母2位于上模具3的一侧上部,与螺杆1进行连接,通过该结构,可以使得覆膜后陶瓷与金属件被夹持固定,之后在真空炉下加热并保温。Furthermore, an embodiment of the present invention also provides a flat-seal structural component of a flat-seal structural porcelain seal, which is applied to the high-precision sealing method of the flat-seal structural porcelain seal mentioned in this embodiment. The structural component includes an upper mold 3 and a lower mold 4, a gun housing component 5 is installed between the upper mold 3 and the lower mold 4, a screw 1 is installed on one side of the lower mold 4, the top of the screw 1 passes through one side of the upper mold 3 and extends a part, and a nut 2 is threadedly connected on the outer wall of the screw 1, wherein the nut 2 is located on the upper part of one side of the upper mold 3 and is connected to the screw 1. Through this structure, the ceramic and metal parts can be clamped and fixed after coating, and then heated and kept warm in a vacuum furnace.
其中螺杆1材质采用与陶瓷膨胀系数接近的可伐材料,确保在高温状态下瓷件和金属件能够紧密接触;上、下紧固模具为不锈钢材质,且上模具3厚度达到5~6mm,依靠模具自重充分挤压高温状态下Cu薄膜、Ag薄膜形成的液态银铜共晶合金,进一步降低封接后高度方向的变化量;The screw 1 is made of kovar material with a coefficient of expansion close to that of ceramics, ensuring that the ceramic parts and metal parts can be in close contact at high temperatures; the upper and lower fastening molds are made of stainless steel, and the thickness of the upper mold 3 reaches 5-6mm, relying on the mold's own weight to fully squeeze the liquid silver-copper eutectic alloy formed by the Cu film and Ag film at high temperatures, further reducing the change in the height direction after sealing;
进一步地,枪壳组件5是真空电子器件的重要部件,主要作用是支撑并控制各金属零件之间的间距,同时通过中间间隔的陶瓷实现各极之间的耐压,确保产品工作状态等满足设计要求。Furthermore, the gun housing assembly 5 is an important component of the vacuum electronic device, and its main function is to support and control the spacing between the metal parts, and at the same time achieve the pressure resistance between the poles through the ceramics in the middle, ensuring that the product working state meets the design requirements.
下面将结合具体的实施例对本发明作进一步地解释说明:The present invention will be further explained below in conjunction with specific embodiments:
实施例一:Embodiment 1:
平封结构瓷封件的高精度封接方法,包括以下方法步骤:The high-precision sealing method of a flat seal structure porcelain seal comprises the following steps:
S1、在陶瓷上、下端面首先镀覆Ti膜实现金属化,在此步骤中,陶瓷上、下端面T i膜的镀覆厚度为1.8μm;S1. First, Ti film is plated on the upper and lower end surfaces of the ceramic to achieve metallization. In this step, the plating thickness of the Ti film on the upper and lower end surfaces of the ceramic is 1.8 μm;
S2、将镀覆后的瓷件在真空气氛环境下加热保温处理,在此步骤中,瓷件在真空气氛环境下的加热温度为700℃,保温时间为5min;S2, heating and heat-insulating the plated porcelain piece in a vacuum atmosphere. In this step, the heating temperature of the porcelain piece in the vacuum atmosphere is 700° C., and the heat-insulating time is 5 minutes;
S3、请参阅附图2所示,在瓷件的上、下端面先后镀覆Cu膜、Ag膜,在此步骤中,Cu膜的镀覆厚度为0.8μm,Ag膜的镀覆厚度为1.8μm;S3, as shown in FIG. 2, Cu film and Ag film are plated on the upper and lower end surfaces of the ceramic component in sequence. In this step, the plating thickness of the Cu film is 0.8 μm, and the plating thickness of the Ag film is 1.8 μm;
S4、覆膜后陶瓷与金属件在专用平封结构组件夹持固定后在真空炉下加热并保温一段时间,使得Cu薄膜、Ag薄膜中的原子之间相互扩散形成银铜共晶合金焊料,在此步骤中,真空炉内加热到800℃保温10min,升温速率460℃/h,降温速率260℃/h,真空度控制优于1×10-3Pa。S4. After coating, the ceramic and metal parts are clamped and fixed in a special flat sealing structure assembly, and then heated and kept warm for a period of time in a vacuum furnace, so that the atoms in the Cu film and the Ag film diffuse with each other to form a silver-copper eutectic alloy solder. In this step, the vacuum furnace is heated to 800°C and kept warm for 10 minutes, the heating rate is 460°C/h, the cooling rate is 260°C/h, and the vacuum degree is controlled to be better than 1×10-3Pa.
实施例二:Embodiment 2:
平封结构瓷封件的高精度封接方法,包括以下方法步骤:The high-precision sealing method of a flat seal structure porcelain seal comprises the following steps:
S1、在陶瓷上、下端面首先镀覆Ti膜实现金属化,在此步骤中,陶瓷上、下端面T i膜的镀覆厚度为2μm;S1. First, Ti film is plated on the upper and lower end surfaces of the ceramic to achieve metallization. In this step, the plating thickness of the Ti film on the upper and lower end surfaces of the ceramic is 2 μm;
S2、将镀覆后的瓷件在真空气氛环境下加热保温处理,在此步骤中,瓷件在真空气氛环境下的加热温度为700℃,保温时间为5min;S2, heating and heat-insulating the plated porcelain piece in a vacuum atmosphere. In this step, the heating temperature of the porcelain piece in the vacuum atmosphere is 700° C., and the heat-insulating time is 5 minutes;
S3、请参阅附图2所示,在瓷件的上、下端面先后镀覆Cu膜、Ag膜,在此步骤中,Cu膜的镀覆厚度为1μm,Ag膜的镀覆厚度为2μm;S3, as shown in FIG. 2, Cu film and Ag film are plated on the upper and lower end surfaces of the ceramic component in sequence. In this step, the plating thickness of the Cu film is 1 μm, and the plating thickness of the Ag film is 2 μm;
S4、覆膜后陶瓷与金属件在专用平封结构组件夹持固定后在真空炉下加热并保温一段时间,使得Cu薄膜、Ag薄膜中的原子之间相互扩散形成银铜共晶合金焊料,在此步骤中,真空炉内加热到800℃保温10min,升温速率480℃/h,降温速率280℃/h,真空度控制优于1×10-3Pa。S4. After coating, the ceramic and metal parts are clamped and fixed in a special flat sealing structure assembly, and then heated and kept warm for a period of time in a vacuum furnace, so that the atoms in the Cu film and the Ag film diffuse with each other to form a silver-copper eutectic alloy solder. In this step, the vacuum furnace is heated to 800°C and kept warm for 10 minutes, the heating rate is 480°C/h, the cooling rate is 280°C/h, and the vacuum degree is controlled to be better than 1×10-3Pa.
实施例三:Embodiment three:
平封结构瓷封件的高精度封接方法,包括以下方法步骤:The high-precision sealing method of a flat seal structure porcelain seal comprises the following steps:
S1、在陶瓷上、下端面首先镀覆Ti膜实现金属化,在此步骤中,陶瓷上、下端面T i膜的镀覆厚度为2.2μm;S1. First, Ti film is plated on the upper and lower end surfaces of the ceramic to achieve metallization. In this step, the plating thickness of the Ti film on the upper and lower end surfaces of the ceramic is 2.2 μm;
S2、将镀覆后的瓷件在真空气氛环境下加热保温处理,在此步骤中,瓷件在真空气氛环境下的加热温度为700℃,保温时间为5min;S2, heating and heat-insulating the plated porcelain piece in a vacuum atmosphere. In this step, the heating temperature of the porcelain piece in the vacuum atmosphere is 700° C., and the heat-insulating time is 5 minutes;
S3、请参阅附图2所示,在瓷件的上、下端面先后镀覆Cu膜、Ag膜,在此步骤中,Cu膜的镀覆厚度为1.2μm,Ag膜的镀覆厚度为2.2μm;S3, referring to FIG. 2, the upper and lower end surfaces of the ceramic piece are plated with a Cu film and an Ag film in sequence. In this step, the plating thickness of the Cu film is 1.2 μm, and the plating thickness of the Ag film is 2.2 μm;
S4、覆膜后陶瓷与金属件在专用平封结构组件夹持固定后在真空炉下加热并保温一段时间,使得Cu薄膜、Ag薄膜中的原子之间相互扩散形成银铜共晶合金焊料,在此步骤中,真空炉内加热到800℃保温10min,升温速率500℃/h,降温速率300℃/h,真空度控制优于1×10-3Pa。S4. After coating, the ceramic and metal parts are clamped and fixed in a special flat sealing structure assembly, and then heated and kept warm for a period of time in a vacuum furnace, so that the atoms in the Cu film and the Ag film diffuse with each other to form a silver-copper eutectic alloy solder. In this step, the vacuum furnace is heated to 800°C and kept warm for 10 minutes, with a heating rate of 500°C/h and a cooling rate of 300°C/h. The vacuum degree is controlled to be better than 1×10-3Pa.
表1:实施例一至实施例三步骤参数设定表Table 1: Parameter setting table for steps of Examples 1 to 3
本发明将陶瓷件在镀T i膜实现金属化后镀覆μm级别Cu、Ag金属薄膜,作为过渡液相扩散焊的反应膜层,装配的陶瓷与金属封接组件在真空气氛下800℃保温10min,Cu薄膜、Ag薄膜中的原子之间发生扩散形成共晶合金焊料,实现了过渡液相扩散焊。The present invention plates Cu and Ag metal films of μm level on ceramic parts after metallization by Ti film as reaction film layers for transitional liquid phase diffusion welding. The assembled ceramic and metal sealing components are kept at 800°C for 10 minutes in a vacuum atmosphere, and atoms in the Cu film and the Ag film diffuse to form eutectic alloy solder, thus achieving transitional liquid phase diffusion welding.
该方法明显改善了组件封接前后高度方向的变化量,单道焊缝高度方向变化量从原有的20~30μm缩小到4μm,实现了高精度封接效果,提升了真空电子器件平封结构瓷封件各极间距控制一致性。This method significantly improves the height variation of the component before and after sealing. The height variation of a single weld is reduced from the original 20 to 30 μm to 4 μm, achieving a high-precision sealing effect and improving the consistency of control of the inter-electrode spacing of the flat-sealed porcelain seals of vacuum electronic devices.
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311829710.0A CN117820005A (en) | 2023-12-28 | 2023-12-28 | Flat seal structure assembly of flat seal structure porcelain seal piece and high-precision sealing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311829710.0A CN117820005A (en) | 2023-12-28 | 2023-12-28 | Flat seal structure assembly of flat seal structure porcelain seal piece and high-precision sealing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117820005A true CN117820005A (en) | 2024-04-05 |
Family
ID=90510898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311829710.0A Pending CN117820005A (en) | 2023-12-28 | 2023-12-28 | Flat seal structure assembly of flat seal structure porcelain seal piece and high-precision sealing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117820005A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119827796A (en) * | 2024-12-30 | 2025-04-15 | 华中光电技术研究所(中国船舶集团有限公司第七一七研究所) | Quartz base plane differential quartz vibrating beam accelerometer and packaging method thereof |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63190773A (en) * | 1987-02-02 | 1988-08-08 | 住友電気工業株式会社 | Ceramics and metal joint with excellent bonding strength |
| JPH0977571A (en) * | 1995-09-13 | 1997-03-25 | Toshiba Corp | Ceramics bonding material and method for manufacturing ceramics-metal bonded body using the same |
| JPH09245588A (en) * | 1996-03-12 | 1997-09-19 | Toshiba Corp | Method for manufacturing vacuum airtight container and vacuum airtight container |
| JPH10193167A (en) * | 1996-12-27 | 1998-07-28 | Toshiba Corp | Sealing method for brazing material and vacuum airtight container |
| JP2006062930A (en) * | 2004-08-30 | 2006-03-09 | Sumitomo Metal Electronics Devices Inc | Bonded body of ceramic and metal and manufacturing method thereof |
| JP2007142231A (en) * | 2005-11-21 | 2007-06-07 | Nec Schott Components Corp | Electronic component package and manufacturing method thereof |
| CN102515874A (en) * | 2011-12-26 | 2012-06-27 | 中国电子科技集团公司第十二研究所 | Method for metalizing surface of aluminum nitride ceramic |
| CN104862701A (en) * | 2015-05-11 | 2015-08-26 | 哈尔滨工业大学 | Method for fast preparing high-temperature service total IMC microscale solder joint through multi-layer micron and submicron film |
| CN206497870U (en) * | 2017-02-20 | 2017-09-15 | 南京三乐集团有限公司 | The high space travelling wave tube electron gun of a kind of long lifespan, the efficiency of heating surface |
| CN107591338A (en) * | 2017-08-11 | 2018-01-16 | 苏州孚尔唯系统集成有限公司 | A kind of electronic package method based on TLP diffusion connections |
| CN108129138A (en) * | 2017-12-15 | 2018-06-08 | 南京三乐集团有限公司 | TiO2Attenuation ceramic and preparation method thereof |
| CN111192831A (en) * | 2020-03-05 | 2020-05-22 | 哈尔滨工业大学(威海) | Surface metallization method for high thermal conductivity silicon nitride ceramic substrate and packaging substrate thereof |
| RU2777312C1 (en) * | 2021-11-08 | 2022-08-02 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный университет путей сообщения" (СГУПС) г. Новосибирск | Method for metallization of ceramic products |
| CN114845834A (en) * | 2019-12-19 | 2022-08-02 | 罗杰斯德国有限公司 | Solder material, method for producing such a solder material and use of such a solder material for bonding a metal layer to a ceramic layer |
| CN219106062U (en) * | 2022-03-30 | 2023-05-30 | 南京三乐集团有限公司 | Electrode assembly structure of vacuum device and positioning tool |
| CN116283336A (en) * | 2023-03-24 | 2023-06-23 | 中国科学院上海硅酸盐研究所 | A kind of connection method of lead zirconate titanate ceramics and metal |
-
2023
- 2023-12-28 CN CN202311829710.0A patent/CN117820005A/en active Pending
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63190773A (en) * | 1987-02-02 | 1988-08-08 | 住友電気工業株式会社 | Ceramics and metal joint with excellent bonding strength |
| JPH0977571A (en) * | 1995-09-13 | 1997-03-25 | Toshiba Corp | Ceramics bonding material and method for manufacturing ceramics-metal bonded body using the same |
| JPH09245588A (en) * | 1996-03-12 | 1997-09-19 | Toshiba Corp | Method for manufacturing vacuum airtight container and vacuum airtight container |
| JPH10193167A (en) * | 1996-12-27 | 1998-07-28 | Toshiba Corp | Sealing method for brazing material and vacuum airtight container |
| JP2006062930A (en) * | 2004-08-30 | 2006-03-09 | Sumitomo Metal Electronics Devices Inc | Bonded body of ceramic and metal and manufacturing method thereof |
| JP2007142231A (en) * | 2005-11-21 | 2007-06-07 | Nec Schott Components Corp | Electronic component package and manufacturing method thereof |
| CN102515874A (en) * | 2011-12-26 | 2012-06-27 | 中国电子科技集团公司第十二研究所 | Method for metalizing surface of aluminum nitride ceramic |
| CN104862701A (en) * | 2015-05-11 | 2015-08-26 | 哈尔滨工业大学 | Method for fast preparing high-temperature service total IMC microscale solder joint through multi-layer micron and submicron film |
| CN206497870U (en) * | 2017-02-20 | 2017-09-15 | 南京三乐集团有限公司 | The high space travelling wave tube electron gun of a kind of long lifespan, the efficiency of heating surface |
| CN107591338A (en) * | 2017-08-11 | 2018-01-16 | 苏州孚尔唯系统集成有限公司 | A kind of electronic package method based on TLP diffusion connections |
| CN108129138A (en) * | 2017-12-15 | 2018-06-08 | 南京三乐集团有限公司 | TiO2Attenuation ceramic and preparation method thereof |
| CN114845834A (en) * | 2019-12-19 | 2022-08-02 | 罗杰斯德国有限公司 | Solder material, method for producing such a solder material and use of such a solder material for bonding a metal layer to a ceramic layer |
| CN111192831A (en) * | 2020-03-05 | 2020-05-22 | 哈尔滨工业大学(威海) | Surface metallization method for high thermal conductivity silicon nitride ceramic substrate and packaging substrate thereof |
| RU2777312C1 (en) * | 2021-11-08 | 2022-08-02 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный университет путей сообщения" (СГУПС) г. Новосибирск | Method for metallization of ceramic products |
| CN219106062U (en) * | 2022-03-30 | 2023-05-30 | 南京三乐集团有限公司 | Electrode assembly structure of vacuum device and positioning tool |
| CN116283336A (en) * | 2023-03-24 | 2023-06-23 | 中国科学院上海硅酸盐研究所 | A kind of connection method of lead zirconate titanate ceramics and metal |
Non-Patent Citations (4)
| Title |
|---|
| A.H.M.E. RAHMAN 等: "Strength and microstructure of diffusion bonded titanium using silver and copper interlayers", MATERIALS SCIENCE AND ENGINEERING A, vol. 527, 20 April 2010 (2010-04-20) * |
| CHEN XIN 等: "A Thin Film Metallization Process Development for Silicon Nitride Ceramic Substrates in Power Electronics Packaging", 2023 24TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 11 April 2024 (2024-04-11) * |
| FAYAZ AHMAD MIR 等: "Recent advances and development in joining ceramics to metals", MATERIALS TODAY: PROCEEDINGS, vol. 46, 23 April 2021 (2021-04-23), pages 6570 - 6575 * |
| 鲁燕萍: "陶瓷与金属的活性封接", 真空电子技术, no. 04, 30 August 2003 (2003-08-30) * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119827796A (en) * | 2024-12-30 | 2025-04-15 | 华中光电技术研究所(中国船舶集团有限公司第七一七研究所) | Quartz base plane differential quartz vibrating beam accelerometer and packaging method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US12351524B2 (en) | Preparation method for copper plate-covered silicon nitride ceramic substrate | |
| CN117820005A (en) | Flat seal structure assembly of flat seal structure porcelain seal piece and high-precision sealing method thereof | |
| CN111725144A (en) | High-temperature electronic packaging substrate material device based on gas-liquid phase transition and preparation method thereof | |
| CN108417501A (en) | Power module and preparation method thereof | |
| CN118900539A (en) | Preparation method of high thermal and electrical conductivity boron nitride copper composite material | |
| CN114953630A (en) | Porous interlayer self-packaging type liquid metal phase change interface material and preparation method and use method thereof | |
| CN111486727A (en) | Vapor chamber | |
| CN102009240A (en) | Method for connecting AlN (aluminum nitride) ceramics and SiC/Al composite material respectively plated with thin-film metal layer on surface | |
| KR102328205B1 (en) | Manufacturing of low temperature glass ring used for sealing aluminum composite material and glass insulation terminal and its use method | |
| CN107799428A (en) | A kind of power chip method for packing and structure | |
| CN107617831A (en) | A kind of ceramic and metal jointing oxidation resistant low-silver solder | |
| CN116817648A (en) | Ceramic temperature equalizing plate and manufacturing method thereof | |
| CN107749399A (en) | A kind of power chip method for packing and structure | |
| CN111081566B (en) | Pressure-Assisted Silver Sintering Device for Power Semiconductor Chips | |
| CN119897542B (en) | A brazing process for connecting alumina ceramics and titanium metal using low-activated brazing filler metal | |
| CN114993083A (en) | A low-temperature process visualization ultra-thin flexible soaking plate and preparation method thereof | |
| CN108231703A (en) | A kind of power device module and preparation method thereof | |
| CN114874758B (en) | An indium-based high-efficiency thermal conductive pad | |
| CN117415321A (en) | A high thermal conductivity copper backplane and its production method | |
| CN111848226A (en) | Nano metal layer ceramic substrate and manufacturing method thereof | |
| CN116723679A (en) | Ceramic-based vapor chamber and preparation method and application thereof | |
| CN85107155A (en) | The solid-state pressure diffusion welding (DW) of no silver alloy solder sealing-in pottery and Ke watt, pottery and copper | |
| CN115958263A (en) | Technological method for preventing solder from overflowing in brazing process of AMB substrate | |
| CN223284973U (en) | A SMD metal ceramic tube base structure for GaN HEMT devices | |
| CN104538313A (en) | Method for filling through hole of aluminum oxide ceramic substrate with copper |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |