CN117928811A - Dual-mode resonant pressure sensor - Google Patents

Dual-mode resonant pressure sensor Download PDF

Info

Publication number
CN117928811A
CN117928811A CN202410056171.XA CN202410056171A CN117928811A CN 117928811 A CN117928811 A CN 117928811A CN 202410056171 A CN202410056171 A CN 202410056171A CN 117928811 A CN117928811 A CN 117928811A
Authority
CN
China
Prior art keywords
pressure
resonators
resonator
sensor
measured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202410056171.XA
Other languages
Chinese (zh)
Inventor
陈德勇
秦佳新
夏文良
王军波
谢波
鲁毓岚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aerospace Information Research Institute of CAS
Original Assignee
Aerospace Information Research Institute of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aerospace Information Research Institute of CAS filed Critical Aerospace Information Research Institute of CAS
Priority to CN202410056171.XA priority Critical patent/CN117928811A/en
Publication of CN117928811A publication Critical patent/CN117928811A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

本发明提供一种双模式谐振压力传感器,使得同一个MEMS敏感芯片仅通过简单的工作方式的切换即可实现中低真空至大气压力的全量程压力测量。在大于低真空压力段通过多个(2个及以上)单体谐振器或一个单体谐振器搭配热敏部件构成的谐振式压力传感器实现测量,传感器在此部分将具备高精度输出特性,且可在宽温区稳定工作。在中低真空压力段,多个单体谐振器(不少于2个)耦合在一起,且通过调整耦合刚度使耦合系统工作在弱耦合状态,此时传感器产生模态局域化现象,借此可获得高灵敏度特性,实现低真空压力的高灵敏度测量。

The present invention provides a dual-mode resonant pressure sensor, which enables the same MEMS sensitive chip to achieve full-range pressure measurement from medium and low vacuum to atmospheric pressure by simply switching the working mode. In the pressure section greater than the low vacuum, the measurement is achieved by a resonant pressure sensor composed of multiple (2 or more) single resonators or a single resonator with a thermal sensitive component. The sensor will have high-precision output characteristics in this part and can work stably in a wide temperature range. In the medium and low vacuum pressure section, multiple single resonators (no less than 2) are coupled together, and the coupling stiffness is adjusted to make the coupling system work in a weak coupling state. At this time, the sensor produces a modal localization phenomenon, thereby obtaining high sensitivity characteristics and realizing high-sensitivity measurement of low vacuum pressure.

Description

一种双模式谐振压力传感器A dual-mode resonant pressure sensor

技术领域Technical Field

本发明属于MEMS压力传感器设计领域,尤其涉及一种双模式谐振压力传感器。The invention belongs to the field of MEMS pressure sensor design, and in particular relates to a dual-mode resonant pressure sensor.

背景技术Background technique

传统的谐振式压力传感器受其应变机制的影响仅适用于低真空范围(大于0.5kPa)以上的压力测量,虽具有超高精度特性,但无法测量中低真空范围压力。而已有的全量程压力传感器,即测量大气压至中低空或高真空范围压力,普遍基于热粘滞阻尼原理或与薄膜、电离真空计组合成复合真空计实现此目标,通常精度较低(不优于10%读数精度),且复合真空计组成复杂,目前鲜有基于一个传感器芯片实现高灵敏度的低压压力测量和高精度的常压压力测量的研究。The traditional resonant pressure sensor is only suitable for pressure measurement above the low vacuum range (greater than 0.5kPa) due to its strain mechanism. Although it has ultra-high precision, it cannot measure the pressure in the low and medium vacuum range. The existing full-range pressure sensors, that is, measuring the pressure from atmospheric pressure to medium and low vacuum or high vacuum range, are generally based on the principle of thermal viscous damping or combined with thin film and ionization vacuum gauges to form a composite vacuum gauge to achieve this goal. The accuracy is usually low (no better than 10% reading accuracy), and the composite vacuum gauge is complex. At present, there is little research on high-sensitivity low-pressure pressure measurement and high-precision normal pressure measurement based on a sensor chip.

肖定邦等在引证专利202010525596“一种全量程真空计及其测试方法”首次提出了通过一个传感器芯片实现大气压至高真空压力的测量。其利用谐振器的多阶模态,并结合多种谐振器激励-响应关系实现不同压力等级的测量,在中低真空范围其单纯的依靠阻尼相关量——品质因数来表征环境压力,已有很多研究表明此工作方式测试复杂、线性度低、精度低,且仅能通过开环激励的方式实现测量,不利于器件的小型化和稳定运行。Xiao Dingbang et al. first proposed to measure atmospheric pressure to high vacuum pressure through a sensor chip in the cited patent 202010525596 "A full-range vacuum gauge and its test method". It uses the multi-order modes of the resonator and combines multiple resonator excitation-response relationships to measure different pressure levels. In the low and medium vacuum range, it simply relies on the damping-related quantity-quality factor to characterize the ambient pressure. Many studies have shown that this working mode is complex to test, has low linearity and low accuracy, and can only be measured through open-loop excitation, which is not conducive to the miniaturization and stable operation of the device.

已有的全量程真空压力测量方案多采用两个分体的传感器测量并通过仪表整合显示,增加了系统的复杂度,不利于系统集成。目前测量低真空压力以上范围多采用压阻或阻尼式传感部件测量,因此精度低、灵敏度有限。除此之外,已有的方案仅能工作在25℃附近,未见有能够适应更低的温度(5℃以下)和更高的温度(50℃以上)的研究或发明,一定程度上限制了传感器的应用。Existing full-scale vacuum pressure measurement solutions mostly use two separate sensors for measurement and display through instrument integration, which increases the complexity of the system and is not conducive to system integration. At present, the measurement of low vacuum pressure range mostly uses piezoresistive or damping sensor components, so the accuracy is low and the sensitivity is limited. In addition, the existing solutions can only work around 25°C, and there is no research or invention that can adapt to lower temperatures (below 5°C) and higher temperatures (above 50°C), which limits the application of sensors to a certain extent.

发明内容Summary of the invention

本发明利用同一个MEMS敏感芯片仅通过简单的工作方式的切换即可实现中低真空至大气压力的测量。在中低真空以上压力段通过多个(2个及以上)单体谐振器或一个单体谐振器搭配热敏部件构成的谐振式压力传感器实现,传感器在此部分将具备高精度输出特性,且可在上述宽温区稳定工作。在中低真空压力段,多个谐振器(不少于2个)耦合在一起,且通过调整耦合刚度使耦合系统工作在弱耦合状态,此时传感器产生模态局域化现象,已有研究表明借此可获得高灵敏度(或高分辨力)特性,实现低真空压力的高灵敏度测量。The present invention utilizes the same MEMS sensitive chip to achieve measurement of medium and low vacuum to atmospheric pressure by simply switching the working mode. In the pressure section above medium and low vacuum, it is realized by a resonant pressure sensor composed of multiple (2 or more) single resonators or a single resonator with a thermal sensitive component. The sensor will have high-precision output characteristics in this part and can work stably in the above-mentioned wide temperature range. In the medium and low vacuum pressure section, multiple resonators (no less than 2) are coupled together, and the coupling stiffness is adjusted to make the coupling system work in a weak coupling state. At this time, the sensor produces a modal localization phenomenon. Studies have shown that high sensitivity (or high resolution) characteristics can be obtained by this, and high-sensitivity measurement of low vacuum pressure can be achieved.

本发明提供一种双模式谐振压力传感器,所述双模式谐振压力传感器包括谐振器组,谐振器组包括至少2个单体谐振器,其中,The present invention provides a dual-mode resonant pressure sensor, the dual-mode resonant pressure sensor comprises a resonator group, the resonator group comprises at least two single resonators, wherein:

在低真空以上压力段即P≥P0,谐振器组的单体谐振器不耦合,单体谐振器将分别敏感于压力,各自产生谐振频率输出量,通过同时解算某些单体谐振器的谐振频率或解算其中一个单体谐振器频率以及热敏部件的输出值,得到该温度下待测压力值;In the pressure range above low vacuum, that is, P≥P 0 , the monomer resonators of the resonator group are not coupled, and the monomer resonators will be sensitive to pressure respectively, and each will generate a resonant frequency output. By simultaneously solving the resonant frequency of some monomer resonators or solving the frequency of one of the monomer resonators and the output value of the heat-sensitive component, the pressure value to be measured at this temperature is obtained;

在中低真空范围内即P<P0,谐振器组的单体谐振器弱耦合,使谐振器组产生模态局域化现象,此时通过解算各单体谐振器的幅值信息与热敏部件输出值得到该温度下待测压力的测量值。In the low to medium vacuum range, ie, P<P 0 , the monomer resonators of the resonator group are weakly coupled, causing the resonator group to produce modal localization. At this time, the measured value of the pressure to be measured at this temperature is obtained by solving the amplitude information of each monomer resonator and the output value of the thermal sensitive component.

进一步,所述谐振器组为基于静电力实现的静电耦合的2自由度耦合谐振器;两个单体谐振器通过锚点固定在压力传感器的压力膜片上,工作时通过电极实现各自的激励和拾振,基于静电力的耦合结构通过两个耦合电极与两个单体谐振器实现软连接,通过调整静电力强弱、耦合结构锚点的数量和位置调整传感器的灵敏度,此时两个单体谐振器结构和尺寸完全相同。Furthermore, the resonator group is a two-degree-of-freedom coupled resonator based on electrostatic coupling achieved by electrostatic force; two single resonators are fixed on the pressure diaphragm of the pressure sensor through anchor points, and their respective excitation and vibration pickup are achieved through electrodes during operation. The coupling structure based on electrostatic force achieves a soft connection with the two single resonators through two coupling electrodes, and the sensitivity of the sensor is adjusted by adjusting the strength of the electrostatic force and the number and position of the coupling structure anchor points. At this time, the structure and size of the two single resonators are exactly the same.

进一步,在中低真空范围内即P<P0,谐振器组工作在弱耦合状态时,通过其中至少两个单体谐振器幅值信息R1和R2与热敏部件输出值V在温度T下待测压力的测量值P:Further, in the low to medium vacuum range, that is, P<P 0 , when the resonator group works in a weak coupling state, the measured value P of the pressure to be measured at temperature T is obtained by using the amplitude information R 1 and R 2 of at least two monomer resonators and the output value V of the thermosensitive component:

P(T)=g2(g1(R1,R2),V)P(T)= g2 ( g1 ( R1 , R2 ),V)

其中,g1(·)表示对幅值信息R1和R2的预处理函数,g2(·)为以幅值相关信息g1(R1,R2)和V为自变量表示待测压力P和温度T的函数关系;Wherein, g 1 (·) represents the preprocessing function of the amplitude information R 1 and R 2 , g 2 (·) represents the functional relationship between the pressure P to be measured and the temperature T with the amplitude related information g 1 (R 1 , R 2 ) and V as independent variables;

在低真空以上压力段(P≥P0),通过同时解算至少两个单体谐振器的谐振频率f1和f2或解算其中一个单体谐振器频率fi以及热敏部件的输出值V,可得到温度T下待测压力值P为:In the pressure range above low vacuum (P≥P 0 ), by simultaneously solving the resonant frequencies f 1 and f 2 of at least two monomer resonators or solving the frequency fi of one of the monomer resonators and the output value V of the heat-sensitive component, the pressure value P to be measured at temperature T can be obtained as:

P(T)=h1(f1,f2)或P(T)=h2(fi,V)P(T) = h1 ( f1 , f2 ) or P(T) = h2 ( f1 , V)

其中,h1(·)和h2(·)表示以频率fi和V为自变量表示待测压力P和温度T的函数关系。Wherein, h 1 (·) and h 2 (·) represent the functional relationship between the pressure P to be measured and the temperature T with the frequency fi and V as independent variables.

本发明具有以下有益技术效果:The present invention has the following beneficial technical effects:

中低真空压力段传感器工作在弱耦合模式,具备高灵敏度特性;低真空以上压力段传感器工作在传统谐振模式,具备高精度特性。可在更低温(小于5℃)至更高温(大于50℃)范围内工作。通过一个敏感芯片实现涵盖中低真空压力至大气压在内的宽范围压力测量且中低真空压力部分传感器具有超高灵敏度特征,低真空以上压力段传感器可高精度测量压力,性能可与传统谐振式压力传感器比拟。The sensors in the low and medium vacuum pressure section work in weak coupling mode and have high sensitivity. The sensors in the pressure section above low vacuum work in traditional resonant mode and have high precision. They can work in the range of lower temperature (less than 5°C) to higher temperature (greater than 50°C). Through a sensitive chip, a wide range of pressure measurement from low and medium vacuum pressure to atmospheric pressure can be achieved, and the sensors in the low and medium vacuum pressure section have ultra-high sensitivity. The sensors in the pressure section above low vacuum can measure pressure with high precision, and their performance is comparable to that of traditional resonant pressure sensors.

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

图1为压力传感器芯片的截面图;FIG1 is a cross-sectional view of a pressure sensor chip;

图2为基于机械结构实现的机械耦合的2自由度耦合谐振器;FIG2 is a two-degree-of-freedom coupled resonator based on mechanical coupling realized by a mechanical structure;

图3为基于静电力实现的静电耦合的2自由度耦合谐振器;FIG3 is a two-degree-of-freedom coupled resonator based on electrostatic coupling achieved by electrostatic force;

图4为传感器P≥P0时依据一个单体谐振器和测温部件解算温度的方案的工作流程图;FIG4 is a flowchart of a solution for calculating temperature based on a single resonator and a temperature measuring component when the sensor P ≥ P 0 ;

图5为传感器P≥P0时依据多个(至少2个)单体谐振器解算温度的方案的工作流程图。FIG5 is a flowchart of a solution for calculating temperature based on multiple (at least 2) single resonators when sensor P≥P 0 .

具体实施方式Detailed ways

为了更清楚地说明本发明实施例的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,应当理解,以下附图仅示出了本发明的某些实施例,因此不应被看作是对范围的限定,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他相关的附图。In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

如图1所示为举例所用的双模式谐振压力传感器芯片的截面图。双模式谐振压力传感器芯片共有4层结构:盖板层101、谐振器层102、衬底层103和隔离层104。盖板层101上分布着数个电极引线孔101.1,用于将谐振器组102.1的信号引出,盖板层101上具有一个热敏部件101.2,用于测量环境温度辅助解算任意温度下压力测量值,实现传感器的宽温区工作。谐振器组102.1位于谐振器层102,并经由锚点与衬底层103的压力膜片103.1相接,谐振器组102.1包括至少2个单体谐振器(如双端固支梁谐振器),且各单体谐振器对压力的敏感程度需确保不同,隔离层104上有一通气孔104.1用于将待测压力引入压力膜片103.1。As shown in FIG1 , a cross-sectional view of a dual-mode resonant pressure sensor chip used in the example is shown. The dual-mode resonant pressure sensor chip has a total of four layers: a cover layer 101, a resonator layer 102, a substrate layer 103, and an isolation layer 104. Several electrode lead holes 101.1 are distributed on the cover layer 101, which are used to lead out the signal of the resonator group 102.1. The cover layer 101 has a thermal sensitive component 101.2, which is used to measure the ambient temperature to assist in solving the pressure measurement value at any temperature, so as to realize the wide temperature range operation of the sensor. The resonator group 102.1 is located in the resonator layer 102, and is connected to the pressure diaphragm 103.1 of the substrate layer 103 via an anchor point. The resonator group 102.1 includes at least two single resonators (such as a double-end fixed-beam resonator), and the sensitivity of each single resonator to pressure must be ensured to be different. There is a vent 104.1 on the isolation layer 104 for introducing the pressure to be measured into the pressure diaphragm 103.1.

图2为基于机械结构实现的机械耦合的2自由度耦合谐振器,其是图1中谐振器组102.1的一种具体实现方式。耦合谐振器由两个结构相同的单体谐振器201.1和201.2以及耦合结构205组成。单体谐振器201.1和201.2通过锚点208固定在压力膜片103.1上,每个单体谐振器201.1和201.2分别具有调谐电极202和206。工作时通过电极203和207实现各自的激励和拾振。当两个单体谐振器201.1和201.2的谐振频率一致时二者将通过耦合结构205实现耦合,为使传感器在设定压力范围内工作于弱耦合模式,需调整固支锚点205.1的位置或数量使耦合结构205的弯曲刚度远小于单体谐振器201.1和单体谐振器201.2的刚度。当二者频率不一致时二者将不再工作于耦合模式,而是等价于两个单独的谐振器。此处谐振器201.1和201.2的长度或宽度稍有不同,使二者在压力P0处谐振频率有不小于50Hz的频率差。FIG2 is a two-degree-of-freedom coupled resonator based on mechanical coupling realized by a mechanical structure, which is a specific implementation of the resonator group 102.1 in FIG1 . The coupled resonator is composed of two monomer resonators 201.1 and 201.2 of the same structure and a coupling structure 205. The monomer resonators 201.1 and 201.2 are fixed on the pressure diaphragm 103.1 through anchor points 208, and each monomer resonator 201.1 and 201.2 has tuning electrodes 202 and 206, respectively. When working, the electrodes 203 and 207 are used to realize respective excitation and vibration pickup. When the resonant frequencies of the two monomer resonators 201.1 and 201.2 are consistent, the two will be coupled through the coupling structure 205. In order to make the sensor work in a weak coupling mode within a set pressure range, it is necessary to adjust the position or number of the fixed anchor points 205.1 so that the bending stiffness of the coupling structure 205 is much smaller than the stiffness of the monomer resonator 201.1 and the monomer resonator 201.2. When the frequencies of the two are inconsistent, they will no longer work in a coupled mode, but will be equivalent to two separate resonators. Here, the lengths or widths of resonators 201.1 and 201.2 are slightly different, so that the resonant frequencies of the two at pressure P 0 have a frequency difference of not less than 50 Hz.

在中低真空范围内(P<P0),若实际中两个单体谐振器201.1和201.2谐振频率不一致无法耦合,可通过调谐电极202和206施加静电力使二者实现弱耦合,此时传感器的灵敏度与耦合结构205的耦合刚度呈反比例关系,通过降低耦合结构205的耦合刚度即弱耦合将使传感器具备高灵敏度敏感压力的能力,此时通过下述公式解算谐振器201.1和201.2的幅值信息R1和R2与热敏部件101.2输出值V得到温度T下待测压力的测量值P:In the low to medium vacuum range (P<P 0 ), if the resonance frequencies of the two monomer resonators 201.1 and 201.2 are inconsistent and cannot be coupled, the electrostatic force can be applied by tuning electrodes 202 and 206 to achieve weak coupling between the two. At this time, the sensitivity of the sensor is inversely proportional to the coupling stiffness of the coupling structure 205. By reducing the coupling stiffness of the coupling structure 205, that is, weak coupling, the sensor will have the ability to sense pressure with high sensitivity. At this time, the amplitude information R 1 and R 2 of the resonators 201.1 and 201.2 and the output value V of the heat-sensitive component 101.2 are solved by the following formula to obtain the measured value P of the pressure to be measured at temperature T:

P(T)=g2(g1(R1,R2),V)P(T)= g2 ( g1 ( R1 , R2 ),V)

其中,g1(·)表示对幅值信息R1和R2的预处理函数,g2(·)为以幅值相关信息g1(R1,R2)和V为自变量表示待测压力P和温度T的函数关系,其具体形式取决于具体的传感器。Wherein, g 1 (·) represents a preprocessing function of the amplitude information R 1 and R 2 , and g 2 (·) represents a functional relationship between the pressure P to be measured and the temperature T with the amplitude-related information g 1 (R 1 , R 2 ) and V as independent variables, and its specific form depends on the specific sensor.

在低真空以上压力段(P≥P0),悬空调谐电极202和206的电压,如此两个单体谐振器201.1和201.2因基频和灵敏度不一致在量程内将始终无法耦合,单体谐振器将分别敏感压力各自产生频率输出量,即与传统的谐振式压力传感器工作状态一致,通过同时解算两个单体谐振器的谐振频率f1和f2或解算其中一个单体谐振器频率fi以及热敏部件101.2的输出值V,可得到温度T下待测压力值P为:In the pressure range above low vacuum (P≥P 0 ), the voltage of the suspended harmonic electrodes 202 and 206 is such that the two monomer resonators 201.1 and 201.2 will never be coupled within the measuring range due to the inconsistency of the fundamental frequency and sensitivity. The monomer resonators will respectively generate frequency outputs of the sensitive pressures, which is consistent with the working state of the traditional resonant pressure sensor. By simultaneously solving the resonant frequencies f 1 and f 2 of the two monomer resonators or solving the frequency fi of one of the monomer resonators and the output value V of the heat-sensitive component 101.2, the pressure value P to be measured at the temperature T can be obtained as:

P(T)=h1(f1,f2)P(T)=h 1 (f 1 ,f 2 )

or

P(T)=h2(fi,V)P(T)= h2 ( fi ,V)

其中,h1(·)和h2(·)表示以频率fi和V为自变量表示待测压力P和温度T的函数关系,其具体形式取决于具体的传感器,据此可实现宽温度范围(温度下限低于5℃,上限高于50℃)的压力值高精度输出。Wherein, h 1 (·) and h 2 (·) represent the functional relationship between the pressure P to be measured and the temperature T with the frequency fi and V as independent variables. The specific form depends on the specific sensor, and thus a high-precision output of the pressure value in a wide temperature range (the lower limit of the temperature is lower than 5°C and the upper limit is higher than 50°C) can be achieved.

图3为基于静电力实现的静电耦合的2自由度耦合谐振器。此为图2的一个等效方案,其是图1中谐振器102.1的另一具体实现方式。单体谐振器301.1和301.2通过锚点308固定在压力膜片103.1上,工作时通过电极303和307实现各自的激励和拾振。耦合结构305通过两个耦合电极305.2与单体谐振器301.1和301.2软连接,此时单体谐振器301.1和301.2结构和尺寸完全相同。测量中低真空压力时(P<P0),在耦合电极305.2施加电压使两个单体谐振器通过静电力与耦合结构305实现软连接,通过此电压或锚点305.1位置和数量可控制软连接的强弱,再通过调整调谐电极302和306电压即可实现两个单体谐振器的弱耦合,电极304为悬空电极,仅为了与耦合电极305.2构成对称结构,工作在模态局域化诱导的高灵敏度模式。当测量低真空以上压力段时(P≥P0),调整耦合电极305.2的电压使耦合电极305.2与两个单体谐振器电势差为零,此时两个单体谐振器将工作在传统谐振压力传感器模式。FIG3 is a two-degree-of-freedom coupled resonator based on electrostatic coupling realized by electrostatic force. This is an equivalent solution of FIG2 , which is another specific implementation of the resonator 102.1 in FIG1 . The monomer resonators 301.1 and 301.2 are fixed on the pressure diaphragm 103.1 through the anchor point 308, and the electrodes 303 and 307 are used to realize their respective excitation and vibration pickup during operation. The coupling structure 305 is softly connected to the monomer resonators 301.1 and 301.2 through two coupling electrodes 305.2. At this time, the structure and size of the monomer resonators 301.1 and 301.2 are exactly the same. When measuring low and medium vacuum pressure (P<P 0 ), a voltage is applied to the coupling electrode 305.2 so that the two monomer resonators are softly connected to the coupling structure 305 through electrostatic force. The strength of the soft connection can be controlled by this voltage or the position and number of the anchor points 305.1. Then, by adjusting the voltages of the tuning electrodes 302 and 306, the weak coupling of the two monomer resonators can be achieved. The electrode 304 is a suspended electrode, which is only used to form a symmetrical structure with the coupling electrode 305.2 and works in a high sensitivity mode induced by modal localization. When measuring the pressure range above low vacuum (P≥P 0 ), the voltage of the coupling electrode 305.2 is adjusted so that the potential difference between the coupling electrode 305.2 and the two monomer resonators is zero. At this time, the two monomer resonators will work in the traditional resonant pressure sensor mode.

图4为传感器P≥P0时依据一个单体谐振器和测温部件解算温度的方案的工作流程图。在开机后传感器工作于传统谐振压力传感器状态并通过测温部件测量温度产生输出V,若压力值P≥P0则传感器继续工作于传统谐振敏感模式并输出压力值P;若压力值P<P0则自动调整图2、图3中调谐电极202或206、调谐电极302或306的电压使传感器转为工作于弱耦合谐振模式并依据幅值信息R1、R2和温度信息V解算温度T时的待测压力P并输出压力值P,如此往复循环实现传感器在全量程压力范围内压力的测量。FIG4 is a flowchart of a solution for calculating temperature based on a single resonator and a temperature measuring component when the sensor P≥P 0. After startup, the sensor works in a conventional resonant pressure sensor state and measures the temperature through the temperature measuring component to generate an output V. If the pressure value P≥P 0 , the sensor continues to work in a conventional resonant sensitive mode and outputs a pressure value P; if the pressure value P<P 0 , the voltage of the tuning electrode 202 or 206 and the tuning electrode 302 or 306 in FIG2 and FIG3 is automatically adjusted to make the sensor work in a weak coupling resonant mode and calculate the pressure P to be measured at the temperature T based on the amplitude information R 1 , R 2 and the temperature information V and output the pressure value P. This reciprocating cycle realizes the pressure measurement of the sensor within the full range of pressure.

图5为传感器P≥P0时依据多个(至少2个)单体谐振器解算温度的方案的工作流程图。在开机后传感器工作于传统谐振压力传感器状态,若压力值P≥P0则传感器继续工作于传统谐振敏感模式,通过多个单体谐振器的频率信息融合解算环境温度T和待测压力P并输出压力值P;若压力值P<P0则自动调整图2、图3中调谐电极202或206、调谐电极302或306的电压使传感器转为工作于弱耦合谐振模式并依据幅值信息R1、R2和温度信息V解算温度T时的待测压力P并输出压力值P,如此往复循环实现传感器在全量程压力范围内压力的测量。FIG5 is a flowchart of the solution for calculating the temperature based on multiple (at least 2) single resonators when the sensor P≥P0 . After the sensor is turned on, it works in the traditional resonant pressure sensor state. If the pressure value P≥P0 , the sensor continues to work in the traditional resonant sensitive mode, and calculates the ambient temperature T and the pressure P to be measured through the frequency information fusion of multiple single resonators and outputs the pressure value P; if the pressure value P< P0 , the voltage of the tuning electrode 202 or 206 and the tuning electrode 302 or 306 in FIG2 and FIG3 is automatically adjusted to make the sensor work in the weak coupling resonance mode and calculate the pressure P to be measured at the temperature T based on the amplitude information R1 , R2 and the temperature information V and output the pressure value P. This reciprocating cycle realizes the pressure measurement of the sensor within the full range of pressure.

本领域的技术人员容易理解,以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。It will be easily understood by those skilled in the art that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims (3)

1. A dual mode resonant pressure sensor, characterized in that the dual mode resonant pressure sensor comprises a resonator group comprising at least 2 individual resonators, wherein,
In the pressure section above the low vacuum, namely P is more than or equal to P 0, the single resonators of the resonator group are not coupled, the single resonators are respectively sensitive to pressure and respectively generate resonant frequency output quantities, and the pressure value to be measured at the temperature is obtained by simultaneously calculating the resonant frequency of some single resonators or calculating the frequency of one single resonator and the output value of a thermosensitive component;
In the middle and low vacuum range, namely P < P 0, the single resonators of the resonator group are weakly coupled, so that the resonator group generates a mode localization phenomenon, and at the moment, the amplitude information of each single resonator and the output value of the thermosensitive component are solved to obtain the measured value of the pressure to be measured at the temperature.
2. The sensor of claim 1, wherein the resonator group is a 2-degree-of-freedom coupled resonator based on electrostatic coupling achieved by electrostatic forces; the two single resonators are fixed on the pressure membrane of the pressure sensor through anchor points, respective excitation and vibration pickup are realized through electrodes during operation, the coupling structure based on electrostatic force is in soft connection with the two single resonators through the two coupling electrodes, and the sensitivity of the sensor is adjusted by adjusting the strength of the electrostatic force and the number and the position of the anchor points of the coupling structure, so that the structures and the sizes of the two single resonators are identical.
3. The sensor of claim 1, wherein the measured value P of the pressure to be measured at the temperature T is calculated by the at least two individual resonator amplitude information R 1 and R 2 and the thermosensitive member output value V in the medium and low vacuum range, i.e., P < P 0, weak coupling:
P(T)=g2(g1(R1,R2),V)
Wherein g 1 (·) represents a preprocessing function for the amplitude information R 1 and R 2, g 2 (·) is a functional relationship in which the amplitude related information g 1(R1,R2) and V are independent variables to represent the pressure P and the temperature T to be measured;
In the pressure section (P is more than or equal to P 0) above the low vacuum, the resonant frequencies f 1 and f 2 of at least two single resonators in the resonator group are solved simultaneously, or the frequency fi of one single resonator and the output value V of the thermosensitive component are solved, so that the pressure value P to be measured at the temperature T is obtained as follows:
P (T) =h 1(f1,f2) or P (T) =h 2(fi, V
Wherein, h 1 (·) and h 2 (·) represent the function relationship of the measured pressure P and the temperature T with the frequencies f 1、f2 and V as independent variables.
CN202410056171.XA 2024-01-15 2024-01-15 Dual-mode resonant pressure sensor Pending CN117928811A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410056171.XA CN117928811A (en) 2024-01-15 2024-01-15 Dual-mode resonant pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202410056171.XA CN117928811A (en) 2024-01-15 2024-01-15 Dual-mode resonant pressure sensor

Publications (1)

Publication Number Publication Date
CN117928811A true CN117928811A (en) 2024-04-26

Family

ID=90758810

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202410056171.XA Pending CN117928811A (en) 2024-01-15 2024-01-15 Dual-mode resonant pressure sensor

Country Status (1)

Country Link
CN (1) CN117928811A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119469538A (en) * 2024-11-11 2025-02-18 中国科学院空天信息创新研究院 A Sensitivity Enhanced Pressure Sensor Based on Weakly Coupled Resonator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119469538A (en) * 2024-11-11 2025-02-18 中国科学院空天信息创新研究院 A Sensitivity Enhanced Pressure Sensor Based on Weakly Coupled Resonator
CN119469538B (en) * 2024-11-11 2025-07-04 中国科学院空天信息创新研究院 Sensitization type pressure sensor based on weak coupling resonator

Similar Documents

Publication Publication Date Title
Tatar et al. Stress effects and compensation of bias drift in a MEMS vibratory-rate gyroscope
CN110501098B (en) A Highly Sensitive Micro-Pressure Sensor Based on Dual Pressure Films and Weakly Coupled Resonant System
CN104820113B (en) A kind of quartzy twin beams power frequency resonator of integrated temperature sensitive unit
JP4973718B2 (en) Pressure detection unit and pressure sensor
CN102928131B (en) Quartz resonance beam type micro-pressure sensor chip
Cheng et al. Design and fabrication of a resonant pressure sensor by combination of DETF quartz resonator and silicon diaphragm
CN109883581B (en) A cantilever beam differential resonance pressure sensor chip
JP2008232886A (en) Pressure sensor
CN108871627A (en) A kind of difference double resonance type acoustic wave pressure sensor
CN116754107A (en) Highly sensitive resonant pressure sensor with amplification structure and signal conditioning method
CN117928811A (en) Dual-mode resonant pressure sensor
CN110017922A (en) A kind of probe-type high-precision force sensor based on full quartz resonator
US20110001396A1 (en) Compact pressure-sensing device
Ren et al. A composite structure pressure sensor based on quartz DETF resonator
EP0777116B1 (en) Pressure sensor with rectangular layers and transverse transducer
Hu et al. Quartz resonant pressure sensor based on bow-inspired rationally designed device configuration
CN109883580B (en) Full quartz differential type resonance pressure sensor chip
US7155980B2 (en) Resonating transducer
CN119268918A (en) A silicon resonant pressure sensor
JPS5856428B2 (en) Pressure sensor using a crystal oscillator
CN115575668B (en) Silicon micro-resonant accelerometer temperature error suppression electrode and suppression method thereof
Cheng et al. Feasibility study of a pressure sensor based on double-ended tuning fork quartz resonator
CN113968570B (en) A two-degree-of-freedom resonant MEMS sensor based on active coupling and its application
CN121007659B (en) Silicon resonance temperature and pressure sensor and preparation method thereof
CN121027632B (en) Sensitive unit structure of piezoelectric-piezoresistive coupling type electric field sensor and application

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination