CN1193441C - 磁隧道结器件、使用该器件的磁存储器和单元及其存取方法 - Google Patents

磁隧道结器件、使用该器件的磁存储器和单元及其存取方法 Download PDF

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Publication number: CN1193441C
Authority: CN; China
Prior art keywords: layer; magnetic; magnetosphere; magnetic circuit; magnetization
Prior art date: 1999-12-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CNB001310593A

Other languages

English (en)

Chinese (zh)

Other versions

CN1305234A (zh

Inventor

南方量二

道嶋正司

林秀和

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-12-10

Filing date

2000-12-09

Publication date

2005-03-16

2000-02-23 Priority claimed from JP2000045447A external-priority patent/JP2001237470A/ja

2000-03-10 Priority claimed from JP2000065913A external-priority patent/JP3738165B2/ja

2000-12-09 Application filed by Sharp Corp filed Critical Sharp Corp

2001-07-25 Publication of CN1305234A publication Critical patent/CN1305234A/zh

2005-03-16 Application granted granted Critical

2005-03-16 Publication of CN1193441C publication Critical patent/CN1193441C/zh

2020-12-09 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

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238000000034 method Methods 0.000 title claims description 19
230000005294 ferromagnetic effect Effects 0.000 claims abstract description 224
230000005415 magnetization Effects 0.000 claims abstract description 126
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125000006850 spacer group Chemical group 0.000 claims description 5
229910052802 copper Inorganic materials 0.000 claims description 4
230000004888 barrier function Effects 0.000 claims 13
230000005303 antiferromagnetism Effects 0.000 claims 11
MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims 2
239000010410 layer Substances 0.000 description 558
230000005290 antiferromagnetic effect Effects 0.000 description 55
238000010586 diagram Methods 0.000 description 16
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229910015136 FeMn Inorganic materials 0.000 description 3
229910003289 NiMn Inorganic materials 0.000 description 3
238000001816 cooling Methods 0.000 description 3
230000005292 diamagnetic effect Effects 0.000 description 3
229910052742 iron Inorganic materials 0.000 description 3
229910052759 nickel Inorganic materials 0.000 description 3
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Images

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets

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Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Nanotechnology (AREA)
Crystallography & Structural Chemistry (AREA)
Computer Hardware Design (AREA)
Physics & Mathematics (AREA)
Power Engineering (AREA)
Mathematical Physics (AREA)
Theoretical Computer Science (AREA)
Mram Or Spin Memory Techniques (AREA)
Hall/Mr Elements (AREA)
Semiconductor Memories (AREA)
Thin Magnetic Films (AREA)

CNB001310593A 1999-12-10 2000-12-09 磁隧道结器件、使用该器件的磁存储器和单元及其存取方法 Expired - Fee Related CN1193441C (zh)

Applications Claiming Priority (6)

Application Number	Priority Date	Filing Date	Title
JP351048/1999		1999-12-10
JP35104899		1999-12-10
JP45447/2000		2000-02-23
JP2000045447A JP2001237470A (ja)	2000-02-23	2000-02-23	磁気トンネル接合素子及びそれを用いた磁気メモリ
JP65913/2000		2000-03-10
JP2000065913A JP3738165B2 (ja)	2000-03-10	2000-03-10	磁気メモリセル

Publications (2)

Publication Number	Publication Date
CN1305234A CN1305234A (zh)	2001-07-25
CN1193441C true CN1193441C (zh)	2005-03-16

Family

ID=27341361

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CNB001310593A Expired - Fee Related CN1193441C (zh)	1999-12-10	2000-12-09	磁隧道结器件、使用该器件的磁存储器和单元及其存取方法

Country Status (3)

Country	Link
US (1)	US6519179B2 (de)
EP (1)	EP1107329B1 (de)
CN (1)	CN1193441C (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6724674B2 (en) *	2000-11-08	2004-04-20	International Business Machines Corporation	Memory storage device with heating element
JP5019681B2 (ja) *	2001-04-26	2012-09-05	ルネサスエレクトロニクス株式会社	薄膜磁性体記憶装置
US6750491B2 (en) *	2001-12-20	2004-06-15	Hewlett-Packard Development Company, L.P.	Magnetic memory device having soft reference layer
US6525957B1 (en) *	2001-12-21	2003-02-25	Motorola, Inc.	Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof
US6548849B1 (en) *	2002-01-31	2003-04-15	Sharp Laboratories Of America, Inc.	Magnetic yoke structures in MRAM devices to reduce programming power consumption and a method to make the same
JP4596230B2 (ja)	2002-09-13	2010-12-08	Ｔｄｋ株式会社	磁気メモリデバイスおよびその製造方法
JP4404182B2 (ja) *	2002-09-25	2010-01-27	Ｔｄｋ株式会社	磁気メモリデバイスおよびその読出方法
AU2003292453A1 (en) *	2002-12-18	2004-07-09	Koninklijke Philips Electronics N.V.	Tamper-resisting packaging
JP4365591B2 (ja) *	2003-01-17	2009-11-18	Ｔｄｋ株式会社	磁気メモリデバイスおよび書込電流駆動回路、並びに書込電流駆動方法
US6756239B1 (en) *	2003-04-15	2004-06-29	Hewlett-Packard Development Company, L.P.	Method for constructing a magneto-resistive element
JP4534441B2 (ja)	2003-07-25	2010-09-01	Ｔｄｋ株式会社	磁気記憶セル及びこれを用いた磁気メモリデバイス
FR2860910B1 (fr) *	2003-10-10	2006-02-10	Commissariat Energie Atomique	Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif
US20060281258A1 (en) *	2004-10-06	2006-12-14	Bernard Dieny	Magnetic tunnel junction device and writing/reading method for said device
US20050110004A1 (en) *	2003-11-24	2005-05-26	International Business Machines Corporation	Magnetic tunnel junction with improved tunneling magneto-resistance
US7221584B2 (en) *	2004-08-13	2007-05-22	Taiwan Semiconductor Manufacturing Company, Ltd.	MRAM cell having shared configuration
KR100707170B1 (ko) *	2004-08-23	2007-04-13	삼성전자주식회사	균일한 스위칭 특성을 가지며 저 전류 스위칭이 가능한자기 메모리 소자 및 그 동작방법
JP2007059865A (ja) *	2005-07-27	2007-03-08	Tdk Corp	磁気記憶装置
KR100655438B1 (ko) *	2005-08-25	2006-12-08	삼성전자주식회사	자기 기억 소자 및 그 형성 방법
JPWO2007043358A1 (ja) *	2005-10-07	2009-04-16	コニカミノルタオプト株式会社	セルロースエステルフィルムの製造方法、セルロースエステルフィルム、偏光板及び液晶表示装置
US7547480B2 (en) *	2005-10-28	2009-06-16	Everspin Technologies, Inc.	Magnetic tunnel junction pressure sensors and methods

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4455626A (en)	1983-03-21	1984-06-19	Honeywell Inc.	Thin film memory with magnetoresistive read-out
US6256222B1 (en) *	1994-05-02	2001-07-03	Matsushita Electric Industrial Co., Ltd.	Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same
US5587943A (en)	1995-02-13	1996-12-24	Integrated Microtransducer Electronics Corporation	Nonvolatile magnetoresistive memory with fully closed flux operation
JPH09106514A (ja)	1995-10-06	1997-04-22	Fujitsu Ltd	強磁性トンネル素子及びその製造方法
US5650958A (en) *	1996-03-18	1997-07-22	International Business Machines Corporation	Magnetic tunnel junctions with controlled magnetic response
JP4054403B2 (ja)	1997-04-28	2008-02-27	キヤノン株式会社	磁性薄膜メモリ
JP4136028B2 (ja)	1997-04-28	2008-08-20	キヤノン株式会社	磁性薄膜メモリ素子、それを用いた磁性薄膜メモリ及びその記録再生方法
EP0875901B1 (de)	1997-04-28	2006-08-09	Canon Kabushiki Kaisha	Magnetisches Dünnfilmspeicherelement unter Verwendung des GMR-Effekts und magnetischer Dünnfilmspeicher
JPH11163436A (ja)	1997-11-27	1999-06-18	Matsushita Electric Ind Co Ltd	磁気抵抗効果素子及び磁気抵抗効果型ヘッド
DE19836567C2 (de)	1998-08-12	2000-12-07	Siemens Ag	Speicherzellenanordnung mit Speicherelementen mit magnetoresistivem Effekt und Verfahren zu deren Herstellung

2000
- 2000-12-08 EP EP00126994A patent/EP1107329B1/de not_active Expired - Lifetime
- 2000-12-08 US US09/733,646 patent/US6519179B2/en not_active Expired - Fee Related
- 2000-12-09 CN CNB001310593A patent/CN1193441C/zh not_active Expired - Fee Related

Also Published As

Publication number	Publication date
US20010005011A1 (en)	2001-06-28
EP1107329B1 (de)	2011-07-06
CN1305234A (zh)	2001-07-25
US6519179B2 (en)	2003-02-11
EP1107329A2 (de)	2001-06-13
EP1107329A3 (de)	2002-01-16

Legal Events

Date	Code	Title	Description
2001-05-23	C10	Entry into substantive examination
2001-05-23	SE01	Entry into force of request for substantive examination
2001-07-25	C06	Publication
2001-07-25	PB01	Publication
2005-03-16	C14	Grant of patent or utility model
2005-03-16	GR01	Patent grant
2017-02-01	CF01	Termination of patent right due to non-payment of annual fee	Granted publication date: 20050316 Termination date: 20151209
2017-02-01	EXPY	Termination of patent right or utility model

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