CN120306830A - Wafer Debonding Method - Google Patents

Wafer Debonding Method

Info

Publication number
CN120306830A
CN120306830A CN202510502585.5A CN202510502585A CN120306830A CN 120306830 A CN120306830 A CN 120306830A CN 202510502585 A CN202510502585 A CN 202510502585A CN 120306830 A CN120306830 A CN 120306830A
Authority
CN
China
Prior art keywords
bonding layer
wafer
carrier
laser
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202510502585.5A
Other languages
Chinese (zh)
Inventor
张纯斌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ningbo Meishen Electronics Co ltd
Original Assignee
Ningbo Meishen Electronics Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ningbo Meishen Electronics Co ltd filed Critical Ningbo Meishen Electronics Co ltd
Priority to CN202510502585.5A priority Critical patent/CN120306830A/en
Publication of CN120306830A publication Critical patent/CN120306830A/en
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/10—Devices involving relative movement between laser beam and workpiece using a fixed support, i.e. involving moving the laser beam
    • B23K26/103—Devices involving relative movement between laser beam and workpiece using a fixed support, i.e. involving moving the laser beam the laser beam rotating around the fixed workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)

Abstract

本申请公开了一种晶圆解键合方法，该晶圆解键合方法包括：步骤S1：将固定在一起的晶圆和载体安装于加工台上。步骤S2：使激光光源移动至与键合层所处的高度方向的第一平面内，并调节所述激光光源，使得所述激光光源发出的激光束沿垂直于所述键合层的厚度方向的方向照射在所述键合层上。步骤S3：控制所述激光光源以所述键合层为中心在第一平面内转动和/或控制所述加工台自转，以利用所述激光光源发出所述激光束将所述键合层至少部分分解或至少部分消融。本申请的晶圆解键合方法解决了现有技术中载体选择单一的问题。

The present application discloses a wafer debonding method, which includes: Step S1: Installing the wafer and carrier fixed together on a processing table. Step S2: Move the laser light source to a first plane in the height direction of the bonding layer, and adjust the laser light source so that the laser beam emitted by the laser light source irradiates the bonding layer in a direction perpendicular to the thickness direction of the bonding layer. Step S3: Control the laser light source to rotate in the first plane with the bonding layer as the center and/or control the rotation of the processing table, so as to utilize the laser light source to emit the laser beam to at least partially decompose or at least partially ablate the bonding layer. The wafer debonding method of the present application solves the problem of single carrier selection in the prior art.

Description

Wafer de-bonding method
Technical Field
The application relates to the technical field of semiconductors, in particular to a wafer de-bonding method.
Background
The (laser) de-bonding of the wafer refers to focusing laser on a bonding layer between the wafer and the carrier, and after the bonding layer acts on the laser, the bonding layer loses viscosity, so that the wafer and the carrier are separated.
However, the existing wafer bonding method generally needs to pass the laser through the carrier and then react with the bonding layer, which means that the carrier must be made of transparent material, resulting in a single carrier choice.
Disclosure of Invention
The present application is directed to a wafer debonding method, which at least solves the problem of single carrier selection in the prior art.
According to an aspect of the present application, there is provided a wafer debonding method for debonding a wafer fixed on a carrier, the wafer being fixed to the carrier by a bonding layer, the wafer debonding method comprising:
S1, mounting a wafer and a carrier which are fixed together on a processing table;
Step S2, moving a laser light source into a first plane in the height direction of the bonding layer, and adjusting the laser light source so that a laser beam emitted by the laser light source irradiates on the bonding layer along the direction perpendicular to the thickness direction of the bonding layer;
And S3, controlling the laser light source to rotate in a first plane by taking the bonding layer as a center and/or controlling the processing table to rotate, so that the laser light source is used for emitting the laser beam to at least partially decompose or at least partially ablate the bonding layer.
Further, the step of controlling the laser light source to rotate in the first plane with the bonding layer as a center and/or controlling the processing table to rotate comprises the following steps:
Controlling the laser light source to rotate in a first plane with the bonding layer as a center at a first rotation angular speed omega 1, wherein the value of the first rotation angular speed omega 1 meets the relation that 10 -7/(R1*t)≤ω1≤10-4/(R1*t),R1 represents the radius of the wafer or half of the maximum length of the wafer, t represents the time of the laser residing on the bonding layer, or,
And controlling the processing table to rotate at a second rotation angular speed omega 2, wherein the value of the second rotation angular speed omega 2 meets the relation that 10 -7/(R1*t)≤ω2≤10-4/(R1*t),R1 represents the radius of the wafer or half of the maximum length of the wafer, and t represents the time of the laser residing on each position on the bonding layer.
Further, the step of controlling the laser light source to rotate in the first plane with the bonding layer as a center and/or controlling the processing table to rotate comprises the following steps:
Controlling the laser light source to rotate in a first rotating direction in the first plane by taking the bonding layer as a center, and controlling the processing table to rotate in a second rotating direction opposite to the first rotating direction or rotate in the first rotating direction, wherein the angular speed omega 1 of the laser light source is different from the angular speed omega 2 of the wafer and the carrier;
When the laser light source and the processing table rotate along the first direction, the numerical value of the angular velocity omega 1 of the laser light source and the numerical value of the angular velocity omega 2 of the processing table meet the relation of 10 -7/(R1*t)≤ω1-ω2≤10-4/(R1 x t, and when the laser light source and the processing table rotate along the opposite direction, the numerical value of the angular velocity omega 1 of the laser light source and the numerical value of the angular velocity omega 2 of the processing table meet the relation of 10 -7/(R1*t)≤ω1+ω2≤10-4/(R1*t),R1 which represents the radius of the wafer or half of the maximum length of the wafer, and t represents the time of the laser residing on each bonding layer.
Further, the wafer de-bonding method further includes:
Adjusting the laser beam with a laser spot adjuster such that a diameter of a spot of the laser beam is less than or equal to a thickness of the bonding layer, and/or,
And controlling the laser light source to move along the height direction of the bonding layer so that a light spot of the laser beam irradiated on the bonding layer is positioned between the surface of the bonding layer, which is contacted with the wafer, and the surface of the carrier, which is away from one side of the wafer, in the thickness direction of the bonding layer.
Further, the step of moving the laser light source into a first plane in a height direction of the bonding layer between the wafer and the carrier includes:
And controlling the laser light source to move along the direction approaching to or separating from the bonding layer so that the distance between the laser light source and the geometric center of the bonding layer is smaller than or equal to a first preset distance.
Further, the step S3 is performed after the step of locating the focal length of the laser beam in the bonding layer if the diameter or the maximum length of the wafer is greater than twice the focal depth a of the laser beam, and includes:
The bonding layer remaining between the wafer and the carrier is separated by at least one of direct cutting, gas cutting, solvent jet separation, ultrasonic vibration separation, thermal separation, and tensile separation.
Further, the carrier comprises a light-transmitting carrier and a non-light-transmitting carrier;
Wherein the light-transmitting carrier comprises at least one of a glass carrier, a diamond carrier, a quartz carrier, a silicon carbide carrier and a sapphire carrier;
The non-light-transmitting carrier comprises at least one of a titanium carbide carrier, a silicon carrier, a ceramic carrier, a gallium arsenide carrier, an indium phosphide carrier, a gallium nitride carrier, a copper carrier and a steel carrier.
Further, the step of controlling the laser light source to emit the laser beam further includes:
and controlling gas to purge the contact point of the laser beam and the bonding layer so as to remove gas or impurities generated when the bonding layer is decomposed or ablated.
Further, the step of fixing the wafer and the carrier includes:
Fixing at least one of the wafer and the carrier, and applying a tensile force to at least one of the wafer and the carrier in a thickness direction of the bonding layer, wherein the directions of the tensile forces applied to the wafer and the carrier are opposite.
Further, the laser light source comprises at least one of an ultraviolet laser light source and an infrared laser light source;
Wherein the wavelength lambda 1 of the laser beam of the ultraviolet laser source satisfies the relation that lambda 1 is less than or equal to 400nm and/or,
The wavelength lambda 2 of the laser beam of the infrared laser source meets the relation that lambda 2 is less than or equal to 1 mu m and less than or equal to 11 mu m.
Compared with the prior art, after the wafer and the carrier are arranged on the processing table, the laser light source is moved to the first plane, then the laser light source is regulated, so that the laser beam of the laser light source can directly act on the bonding layer in a direction parallel to the first plane, and then when the laser light source rotates on the first plane by taking the bonding layer as the center or the processing table rotates automatically, the laser light source is started to emit the laser beam at the moment, so that the laser beam uniformly acts on the bonding layer, and the purpose of bonding is achieved. Compared with the prior art, the laser beam of the application directly acts on the bonding layer, and the laser beam does not need to act on the bonding layer after passing through the carrier, namely the carrier of the application does not need to transmit light, so the selectivity of the carrier is wider compared with the prior art.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
FIG. 1 is a schematic diagram of a wafer debonding method of the present disclosure;
FIG. 2 is a schematic flow chart of a wafer debonding method of the present disclosure;
FIG. 3 is a schematic flow chart of another wafer debonding method of the present disclosure;
FIG. 4 is a simplified diagram of a wafer debonding process according to the present disclosure;
FIG. 5 is a top view of a wafer debonding configuration of the present disclosure;
fig. 6 is an enlarged schematic view of a laser beam of the present disclosure.
Wherein the above figures include the following reference numerals:
10. The wafer, 20, the carrier, 30, the bonding layer, 40, the laser source, 41, the laser beam, 50, the laser spot regulator, 60, the processing table, 61, the first sucking disc, 62, the second sucking disc, 70, the position controller.
Detailed Description
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other. The application will be described in detail below with reference to the drawings in connection with embodiments.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present application. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
The relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present application unless it is specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective parts shown in the drawings are not drawn in actual scale for convenience of description. Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the authorization specification where appropriate. In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of the exemplary embodiments may have different values. It should be noted that like reference numerals and letters refer to like items in the following figures, and thus once an item is defined in one figure, no further discussion thereof is necessary in subsequent figures.
Referring to fig. 1 to 6, according to an embodiment of the present application, there is provided a wafer debonding method for debonding a wafer 10 fixed on a carrier 20, the wafer 10 being fixed on the carrier 20 through a bonding layer 30, the wafer debonding method including the steps of S1 mounting the wafer 10 and the carrier 20 fixed together on a processing table 60.
In practice, during the process of mounting the wafer 10 and the carrier 20 on the processing table 60, it is necessary to keep the wafer 10 and the carrier 20 stacked in the height direction of the processing table 60 so as to facilitate the subsequent debonding of the bonding layer 30. Meanwhile, when the wafer 10 and the carrier 20 are fixed, the wafer 10 may be fixed to the processing table 60, or the carrier 20 may be fixed to the processing table 60. The processing stage 60 may be an air-floating stage or a piezo-electric flexible stage that provides high motion accuracy for precise processing of the wafer 10.
Step S2, the laser source 40 is moved to a first plane along the height direction (Z direction in FIG. 4) of the bonding layer 30, and the laser source 40 is adjusted so that the laser beam 41 emitted by the laser source 40 irradiates the bonding layer 30 along the direction perpendicular to the thickness direction of the bonding layer 30.
In step S2, the laser source 40 is moved into the first plane so that the laser can directly act on the bonding layer 30 after the laser is activated, without having to pass the laser through the carrier 20 or the wafer 10 before acting on the bonding layer 30. In addition, the laser beam 41 emitted from the laser source 40 is adjusted to irradiate the bonding layer 30 along the direction perpendicular to the thickness direction of the bonding layer 30, that is, the emission angle of the laser source 40 is adjusted, so that the laser beam 41 emitted from the laser source 40 is prevented from being offset by a larger angle, and the laser beam 41 cannot act on the bonding layer 30. The device for controlling the movement of the laser light source 40 may employ the position controller 70, that is, the position controller 70 may drive the laser light source 40 to move in the whole three-position space, and move the laser light source 40 to a specific location according to X, Y, Z coordinates. The process of adjusting the laser source 40 may be coordinated with a robot and an optical scanner. The position controller 70 may be a six-axis six-degree-of-freedom positioner to improve the accuracy of the movement of the laser source 40.
Step S3, controlling the laser source 40 to rotate in the first plane around the bonding layer 30 and/or controlling the processing table 60 to rotate automatically, so as to utilize the laser source 40 to emit the laser beam 41 to at least partially decompose or at least partially ablate the bonding layer 30.
In step S3, the purpose of controlling the rotation of the laser source 40 or the processing table 60 is to enable the laser beam 41 to uniformly act on the bonding layer 30, so as to avoid that when the processing table 60 and the laser source 40 are both fixed, the laser cannot uniformly act on the bonding layer 30, so that a large part of the bonding layer 30 cannot be ablated or decomposed by the laser, and the wafer 10 and the carrier 20 are still fixed together, resulting in failure of the laser bonding process.
It can be understood that, in this embodiment, after the wafer 10 and the carrier 20 are mounted on the processing table 60, the laser source 40 is moved to the first plane, and then the laser source 40 is adjusted, so that the laser beam 41 of the laser source 40 can directly act on the bonding layer 30 in a direction parallel to the first plane, and then when the laser source 40 rotates on the first plane with the bonding layer 30 as a center, or the processing table 60 rotates, the laser source 40 is started to emit the laser beam 41 at this time, so that the laser beam 41 uniformly acts on the bonding layer 30, thereby achieving the purpose of bonding detachment. Compared to the prior art, the laser beam 41 of the present application acts directly on the bonding layer 30 without the laser beam 41 having to pass through the carrier 20 before acting on the bonding layer 30, i.e. the carrier 20 of the present application does not have to be light-transmissive, so the selectivity of the carrier 20 is also broader compared to the prior art.
In some embodiments, the step of controlling the rotation of the laser light source 40 in a first plane centered on the bonding layer 30 and/or controlling the rotation of the processing table 60 includes controlling the rotation of the laser light source 40 in the first plane centered on the bonding layer 30 at a first rotational angular velocity ω 1, wherein the value of the first rotational angular velocity ω 1 satisfies the relationship 10 -7/(R1*t)≤ω1≤10-4/(R1*t),R1 representing a radius of the wafer 10 or half of a maximum length of the wafer 10 and t representing a time the laser resides everywhere on the bonding layer 30.
It can be understood that, when the laser light source 40 rotates in the first plane with the bonding layer 30 as the center and the processing table 60 is fixed, the first rotational angular velocity ω 1 of the laser light source 40 is the relative angular velocity between the laser light source 40 and the processing table 60, and the laser beam 41 can be uniformly irradiated on the bonding layer 30 by controlling the magnitude of the first rotational angular velocity ω 1. Meanwhile, D represents the spot diameter of the laser beam 41 according to the formula t=d/v, and t represents the dwell time of the laser at each point on the bonding layer 30, i.e., the dwell time of the laser. ω 1＝D/(R1 ×t can be obtained by the linear velocity formula v=ω 1*R1, where v is the linear velocity of the laser beam 41 irradiated on the outer periphery of the bonding layer 30, in combination with the formula t=d/v. In this embodiment, the bonding layer 30 has a thickness of between 0.1 μm and 100 μm. Therefore, when D in this embodiment can be obtained in a range of 0.1 μm to 100 μm, 10 -7/(R1*t)≤ω1≤10-4/(R1 ×t can be obtained according to the above formula. According to the frequency of the laser source 40 and the difference of the material of the bonding layer 30, the time of decomposition or ablation is different after the bonding layer 30 acts with the laser beam 41, that is, after the bonding layer 30 needs to be contacted with the laser for a certain time, the bonding layer 30 reaches the energy threshold of decomposition or ablation, so that decomposition or ablation can occur. In practice, the value of the residence time t only affects the relative angular velocity between the laser source 40 and the bonding layer 30, and when the residence time t is consistent with the time of ablation or decomposition after the bonding layer 30 contacts the laser, the corresponding value of ω 1 is optimal, that is, the laser can rapidly decompose or ablate the bonding layer 30 under the value of the angular velocity, and the time of bonding can be greatly shortened. And when the residence time t is smaller than the time for ablation or decomposition after the bonding layer 30 contacts the laser, even if the action time of the laser on each place on the bonding layer 30 after one turn is relatively short, after the laser is continuously irradiated on the bonding layer 30 for a plurality of times, the energy on each place on the bonding layer 30 always reaches the energy threshold of dissolution or decomposition, and finally decomposition or dissolution is performed. Furthermore, it should be noted that the laser cannot penetrate most of the bonding layers 30, that is, only the bonding layers 30 in contact with the laser are easily decomposed, so that it is necessary to rotate the laser for a plurality of times before the bonding layers 30 are completely decomposed or ablated. It is worth mentioning that omega 1 is in rad/s and R 1 is in m. Alternatively, the shape of the wafer 10 may be a circle, a rectangle, or other irregular shapes, where R 1 represents the radius of the wafer 10 when the wafer 10 is a circle, and R 1 represents half the maximum length of the wafer 10 when the wafer 10 is other shapes, and the radius or maximum length of the bonding layer 30 is the same as the radius or maximum length of the wafer 10.
In some embodiments, the step of controlling the laser light source 40 to rotate in the first plane about the bonding layer 30 and/or controlling the processing stage 60 to spin includes controlling the processing stage 60 to spin at a second rotational angular velocity ω 2, wherein the second rotational angular velocity ω 2 has a value satisfying the relationship 10 -7/(R1*t)≤ω2≤10-4/(R1 ×t.
Likewise, in the present embodiment, the second rotational angular velocity ω 2 is actually also the relative angular velocity between the outer periphery of the bonding layer 30 and the laser light source 40. Therefore, when the spot diameter of the laser beam 41 is in the range of 0.1 μm to 100 μm, the angular velocity ω 2 of the outer periphery of the bonding layer 30 in contact with the laser beam 41 may be 10 -7/(R1*t)≤ω2≤10-4/(R1 ×t. When ω 2 is greater than 10 -4/(R1 ×t), the rotation speed of the processing table 60 is too high, the time of contacting the laser on each portion of the bonding layer 30 is too short, and a long time is required to decompose or ablate the bonding layer 30, so as to increase the time for bonding detachment. Likewise, ω 2 units are rad/s and R 1 units are m in this example. When ω 2 is less than 10 -7/(R1 ×t), the time between the laser and each contact point on the bonding layer 30 is too long, so that the debonding efficiency is reduced.
In some embodiments, the step of controlling the rotation of the laser light source 40 in a first plane about the bonding layer 30 and/or controlling the rotation of the processing table 60 includes controlling the rotation of the laser light source 40 in a first rotational direction (e.g., direction X1 in FIG. 5) about the bonding layer 30 in the first plane and controlling the rotation of the processing table 60 in a second rotational direction (e.g., direction X2 in FIG. 5) opposite the first rotational direction or in the first rotational direction, the angular velocity ω 1 of the laser light source 40 being different from the angular velocity ω 2 of the wafer 10 and the carrier 20. When the laser light source 40 and the processing table 60 rotate in the first rotation direction, the value of the angular velocity ω 1 of the laser light source 40 and the value of the angular velocity ω 2 of the processing table 60 satisfy the relationship of 10 -7/(R1*t)≤ω1-ω2≤10-4/(R1 ×t), and when the laser light source 40 and the processing table 60 rotate in the opposite direction, the value of the angular velocity ω 1 of the laser light source 40 and the value of the angular velocity ω 2 of the processing table 60 satisfy the relationship of 10 -7/(R1*t)≤ω1+ω2≤10-4/(R1 ×t.
In practice, whether the laser light source 40 rotates or does not rotate, and the processing table 60 rotates or does not rotate, or both the laser light source 40 and the processing table 60 rotate in the same or different directions, it is necessary to ensure that the laser beam 41 has a certain relative angular velocity between the outer periphery of the bonding layer 30 and the outer periphery of the bonding layer 30 in order to make the residence time of the bonding layer 30 in contact with the laser light the same throughout. When the laser light source 40 and the processing table 60 are both rotated in a first rotational direction, the relative angular velocity between the bonding layer 30 and the laser is ω 1-ω2, and when the laser light source 40 and the processing table 60 are rotated in the opposite direction, the relative angular velocity between the bonding layer 30 and the laser is ω 1+ω2. Also, to improve the uniformity of the deblocking, ω 1-ω2 and ω 1+ω2 each need to satisfy the above relationship.
In some preferred embodiments, the bonding layer 30 has a thickness in the range of 1 μm to 50 μm. Further, the thickness of the bonding layer 30 ranges between 5 μm and 30 μm.
In the present embodiment, the bonding layer 30 is selected from the bonding layers 30 which are ablated or decomposed by laser light, and examples thereof include polyimide bonding layers, rubber bonding layers, cycloolefin copolymer bonding layers, polyacrylic acid bonding layers, polymethyl methacrylate bonding layers, polyurethane bonding layers, polycarbonate bonding layers, polyethylene terephthalate bonding layers, cellulose bonding layers, polystyrene bonding layers, epoxy bonding layers, silicone bonding layers, polyamide bonding layers, UV-curable bonding layers, polysulfone bonding layers, and the like. The bonding layer 30 may also be a ceramic bonding layer or a metal bonding layer that is ablated or decomposed by laser light, or a combination of the above bonding layers 30.
Some prior art shows that when the laser light source 40 employs an ultraviolet laser having a wavelength of 355nm, the acrylate (UV cured bonding layer) is decomposed after 10 to 100ms of application thereto. When an ultraviolet laser having a wavelength of 355nm is applied to the polyurethane, the polyurethane decomposes in about 1 to 10 milliseconds. When ultraviolet light is applied to the polyacrylate, the polyacrylate is generally decomposed within 0.1 to 10 seconds. And when ultraviolet light is applied to the epoxy resin, the epoxy resin is decomposed within about 100ms to 10 s. Thus, in some embodiments, the dwell time t is between 0.1ms and 0.1s, depending on the usual effects of the bonding layer 30 material and the laser. For example, when t is 0.1ms, that is, the relative angular velocity between the laser source 40 and the bonding layer 30 may be between 10 -3/R1 and 1/R 1, and when R 1 is 2 inches, the relative angular velocity between the laser source 40 and the bonding layer 30 is between 0.005rad/s and 4.9 rad/s. It is understood that the dissolution time of the bonding layer 30 is related not only to the material of the bonding layer 30, but also to the energy of the laser and the distance between the laser and the bonding layer 30. Thus, the choice of residence time t may be chosen according to the time situation. It should be noted that, although some bonding layers 30 decompose within microseconds after contacting the laser, the residence time is set at the millisecond level, which does not affect the decomposition and ablation of the bonding layer 30, but only increases the time for bonding to be released. If the residence time is actually set at nanosecond time, the rotation speed of the laser source 40 or the processing table 60 is too high, so that the bonding process is unstable.
In practice, the time of decomposition or ablation of the various bonding layers 30 under the action of the laser light can be determined by designing experiments under the various laser light sources 40. For example, after the energy of the laser and the distance between the laser and the bonding layer 30 are fixed, the surface of the contact point between the laser and the bonding layer 30 may be continuously photographed by a high-speed camera (for example, SEM camera or AFM camera), and after a certain time is applied, the morphology of the bonding layer 30 between different frames photographed by the high-speed camera may be analyzed to obtain the decomposition or ablation time of the contact point between the bonding layer 30 and the laser. Of course, for some hot melt bonding layers 30, detection may be performed by a thermal imager to calculate the break up or ablation time of the bonding layer 30. Finally, the residence time is smaller than or equal to the decomposition and ablation time of the bonding layer 30, so that the bonding-releasing efficiency is improved.
Further, the wafer debonding method further includes adjusting the laser beam 41 with the laser spot adjuster 50 such that a diameter of a spot of the laser beam 41 is less than or equal to a thickness of the bonding layer 30.
Specifically, the laser spot modifier 50 may be a spot focuser, an aperture element, a mirror, or the like. In fact, in the present embodiment, the spot diameter of the laser beam 41 is adjusted to be equal to or larger than the thickness of the bonding layer 30, so as to avoid the damage to the wafer 10 caused by the irradiation of the laser beam 41 on the wafer 10 due to the excessive spot diameter of the laser beam 41. In one particular embodiment, the diameter of the laser beam 41 spot is less than 99.9% of the thickness of the bonding layer 30. Preferably, the diameter of the spot of the laser beam 41 is less than 90% of the thickness of the bonding layer 30.
Further, the wafer debonding method further includes controlling the laser light source 40 to move in the height direction of the bonding layer 30 such that a spot of the laser beam 41 irradiated on the bonding layer 30 is located between a surface of the bonding layer 30 contacting the wafer 10 and a surface of the carrier 20 on a side facing away from the wafer 10 in the thickness direction of the bonding layer 30.
In this embodiment, when the laser light source 40 is controlled to move along the height direction of the bonding layer 30, the position controller 70 may be controlled to move according to the coordinate information between the two surfaces, so as to prevent the laser beam 41 from acting on the wafer 10 by cooperating with the position controller 70 and an optical scanner, i.e., the optical scanner is used to monitor the plane of the surface of the bonding layer 30 contacting the wafer 10 in space and the plane of the surface of the carrier 20 facing away from the wafer 10 in space.
Further, the step of moving the laser light source 40 into a first plane in a height direction of the bonding layer 30 between the wafer 10 and the carrier 20 includes controlling the laser light source 40 to move in a direction approaching or separating from the bonding layer 30 such that a distance between the laser light source 40 and a geometric center of the bonding layer 30 is less than or equal to a first predetermined distance.
It should be noted that, due to attenuation occurring after the laser is emitted, when the distance between the laser light source 40 and the wafer 10 is too large, the energy of the laser irradiated on the bonding layer 30 is low, and the bonding layer 30 may not be decomposed or ablated. Therefore, it is necessary to make the distance of the laser light source 40 from the geometric center of the bonding layer 30 less than or equal to the first predetermined distance. In practice, the first predetermined distance needs to be determined according to the frequency, wavelength, pulse of the laser light source 40 and the focal length position of the laser light, and thus the present embodiment is not particularly limited to the first predetermined distance.
Further, if the focal length of the laser beam 41 is located within the bonding layer 30 and the diameter or maximum length of the wafer 10 is greater than twice the focal depth A of the laser beam 41, the step S3 is followed by at least one of direct cutting, gas cutting, solvent jet separation, ultrasonic vibration separation, thermal separation, and stretching separation to separate the bonding layer 30 remaining between the wafer 10 and the carrier 20.
Referring to fig. 6, the focal depth refers to the axial distance of the laser energy and the spot size near the focal length, and the laser spot size of the laser beam 41 in the focal depth a remains almost uniform, whereas after the focal depth a, the laser beam 41 diverges, causing the laser spot to become smaller and the energy of the laser to decrease. If the diameter or maximum length of the wafer 10 is too large, this may result in the laser not being able to completely dissolve or break down the bonding layer 30 between the wafer 10 and the carrier 20. Thus, the bonding layer 30 that is insoluble or decomposable to the laser in the present embodiment may be separated by mechanical cutting means such as direct cutting, gas cutting, and stretching. The bonding layer 30 may also be separated by chemical separation means, such as a process of dissolution agent spray separation and thermal separation. The direct dicing means that the bonding layer 30 may be diced by a processing tool or a wire, the gas dicing means that the bonding layer 30 is diced by a high pressure gas, the tensile separation means that the bonding layer 30 between the wafer 10 and the carrier 20 is separated by applying a tensile force to the wafer 10 and/or the carrier 20, the dissolution agent jet separation means that the bonding layer 30 is dissolved or separated by jetting a dissolution agent that reacts with the bonding layer 30, the ultrasonic vibration separation means that the bonding layer 30 is separated by applying an ultrasonic wave to the bonding layer 30, the thermal separation means that a high temperature is applied to the bonding layer 30 so that the bonding layer 30 is separated from the wafer 10, and the thermal separation includes thermal slip debonding. In some embodiments, during the dissolution agent jet separation, an electric current may be applied at the point of contact of the dissolution agent with the bonding layer 30, thereby increasing the reaction rate of the bonding layer 30. Of course, the focal length of the laser beam 41 may also be adjusted gradually in a direction approaching the geometric center of the wafer 10 as the bonding is released, and finally the laser may completely ablate the bonding layer 30. The diameter or maximum length of the wafer 10 may be 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 7 inches, and 8 inches. In this embodiment, the focal depth a of the laser may be 1 inch, 2 inches, and 3 inches. It will be appreciated that during laser debonding, the depth of focus a of the laser is less affected by the wafer 10 or carrier 20, and is determined by the wavelength of the laser, the beam waist radius of the laser, and the numerical aperture of the laser, and thus adjustment of the depth of focus a can be achieved by adjusting the above parameters.
It should be noted that, since the laser beam 41 near the focal depth may diverge, that is, the spot size of the laser beam 41 may become large, the laser beam 41 acts on the carrier 20 or the wafer 10. However, the laser beam 41 near the focal depth has little or no effect on the wafer 10 and carrier 20 due to the excessive energy drop.
It should be noted that, since the laser beam 41 is directly applied to the bonding layer 30 in the present embodiment, and the spot size of the laser beam can be adjusted, the wafer de-bonding method of the present application has a wider practical application. For example, the method of the present application may be applied to the debonding of integrated circuit chips having diameters or maximum lengths less than 50mm or less than 30mm without affecting the integrated circuit chips.
Since the laser does not need to pass through the carrier 20 before acting on the bonding layer 30 in the present application, the carrier 20 may include a light-transmitting carrier and a non-light-transmitting carrier, so as to improve the selectivity of the carrier 20. Wherein the light-transmitting carrier comprises at least one of a glass carrier, a quartz carrier, a diamond carrier, a silicon carbide carrier and a sapphire carrier. The non-light-transmitting support includes at least one of a titanium carbide support, a silicon support, a ceramic support, a gallium arsenide support, an indium phosphide support, a gallium nitride support, a copper support, and a steel support, and the ceramic support may be, for example, a titanium aluminum carbide support. It should be noted that the sapphire carrier and the silicon carbide carrier have high use cost, while the glass carrier and the quartz carrier have high brittleness and are easily damaged by external force, although the use cost is low and the hardness is high. Preferably, the carrier 20 may be a copper carrier or a steel carrier with stronger structural strength and lower cost. Of course, other high-performance composite material carriers can also be selected as the carrier, such as carbon fiber carriers, glass fiber carriers and the like.
Since gases or impurities may be generated after the bonding layer 30 is decomposed or ablated, such impurities may affect the wafer 10. Thus, the step of controlling the laser source 40 to emit the laser beam 41 in this embodiment further includes controlling the contact point of the gas purging laser beam 41 with the bonding layer 30 to remove the generated gas or impurities by decomposition or ablation of the bonding layer 30.
In one particular embodiment, a gas supply conduit may be secured to the position controller 70 and aligned with the point of action of the laser beam 41 with the bonding layer 30, thereby enabling the gas to purge the bonding layer 30 of gases or impurities. In some embodiments, the purging gas may be at least one of air, nitrogen, and argon, and may be used to assist in the decomposition or ablation of the laser ablatable bonding layer 30 to produce gases or impurities.
Further, the step of fixing the wafer 10 and the carrier 20 includes fixing at least one of the wafer 10 and the carrier 20, and applying a tensile force in a thickness direction of the bonding layer 30 to at least one of the wafer 10 and the carrier 20, and applying tensile forces in opposite directions to the wafer 10 and the carrier 20.
In a specific embodiment, the processing table 60 is provided with a first chuck 61 and a second chuck 62, the first chuck 61 is used for fixing the wafer 10, the first chuck 61 is used for fixing the carrier 20 by pulling the wafer 10 along the thickness direction of the bonding layer 30, the second chuck 62 is used for fixing the carrier 20, and pulling the carrier 20 along the thickness direction of the bonding layer 30, and the directions of the pulling forces applied by the first chuck 61 and the second chuck 62 are opposite. This means that when the bonding layer 30 is de-bonded, the bonding layer 30 is subjected to a tensile force of the carrier 20 and the wafer 10, thereby assisting the separation of the wafer 10and the carrier 20 to some extent. On the other hand, when the first chuck 61 applies a tensile force to the wafer 10, the wafer 10 is warped by a certain angle, thereby preventing the laser beam 41 from contacting the wafer 10 to some extent.
Further, the laser light source 40 includes at least one of an ultraviolet laser light source and an infrared laser light source, wherein the wavelength lambda 1 of the laser beam 41 of the ultraviolet laser light source satisfies the relation of 10nm < lambda 1 < 400nm. The wavelength lambda 2 of the laser beam 41 of the infrared laser source satisfies the relation lambda 2 which is less than or equal to 1 mu m and less than or equal to 11 mu m.
Thanks to the design of the application, i.e. the laser energy is in direct contact with the bonding layer 30, i.e. no consideration is given to the influence of the laser on the carrier 20. Thus, the selection range of the laser is increased, and when the laser light source 40 employs an ultraviolet laser light source, the laser beam 41 wavelength lambda 1 of the ultraviolet laser light source may be 10nm, 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, and 400nm. Of course, an infrared laser light source may be used to match the thermoplastic or thermosetting bonding layer 30, and the laser beam 41 of the infrared laser light source may have a wavelength λ 2 of 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, and 11 μm. Of course, the laser light source 40 may also employ an excimer laser light source, that is, arF laser, krF laser, xeCl laser, xeF laser, and F 2 laser.
In summary, in the wafer debonding method of the present application, the laser is directly contacted with the bonding layer 30, and the laser does not need to pass through the carrier 20 and then act with the bonding layer 30, so that the selectivity of the carrier 20 is improved, that is, the carrier 20 may be a light-transmitting carrier 20 or a light-non-transmitting carrier 20. In addition, in the application, the laser light source 40 or the processing table 60 is arranged to rotate, and the relative angular velocity between the laser light source 40 and the bonding layer 30 is limited, so that the laser light source 40 can uniformly contact with all parts of the periphery of the bonding layer 30, uniform decomposition or ablation of the bonding layer 30 is ensured, and the bonding-releasing efficiency is improved. On the other hand, in the present embodiment, the spot size of the laser beam 41 is limited to be smaller than or equal to the thickness of the bonding layer 30, so that the damage to the wafer 10 caused by the irradiation of the laser beam 41 on the wafer 10 due to the excessive spot size of the laser beam 41 is avoided. Meanwhile, the application also carries out gas purging on the contact point of the laser and the bonding layer 30 at any time, so as to avoid the influence of gas and impurities generated after the bonding layer 30 is decomposed or ablated on the wafer 10. Finally, thanks to the design that the laser directly acts on the bonding layer 30, the laser source 40 in this embodiment may be an ultraviolet laser source or an infrared laser source, and the selectivity of the bonding layer 30 is also greatly improved.
Spatially relative terms, such as "above," "upper" and "upper surface," "above" and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "above" or "over" other devices or structures would then be oriented "below" or "beneath" the other devices or structures. Thus, the process is carried out, the exemplary term "above" may be included. Upper and lower. Two orientations below. The device may also be positioned in other different ways (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
In addition, the terms "first", "second", etc. are used to define the components, and are only for convenience of distinguishing the corresponding components, and the terms have no special meaning unless otherwise stated, and therefore should not be construed as limiting the scope of the present application.
The above is only a preferred embodiment of the present application, and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (10)

1. A wafer debonding method for debonding a wafer (10) mounted on a carrier (20), the wafer (10) being mounted on the carrier (20) by a bonding layer (30), the wafer debonding method comprising:
step S1, mounting a wafer (10) and a carrier (20) which are fixed together on a processing table (60);
step S2, moving a laser light source (40) into a first plane in the height direction of the bonding layer (30), and adjusting the laser light source (40) so that a laser beam (41) emitted by the laser light source (40) irradiates on the bonding layer (30) along the direction perpendicular to the thickness direction of the bonding layer (30);
And S3, controlling the laser source (40) to rotate in a first plane by taking the bonding layer (30) as a center and/or controlling the processing table (60) to rotate, so that the laser source (40) is used for emitting the laser beam (41) to at least partially decompose or at least partially ablate the bonding layer (30).
2. The wafer debonding method of claim 1, wherein the step of controlling the laser light source (40) to rotate in a first plane about the bonding layer (30) and/or controlling the processing station (60) to spin comprises:
Controlling the laser light source (40) to rotate in a first plane with the bonding layer (30) as a center at a first rotational angular speed omega 1, wherein the value of the first rotational angular speed omega 1 satisfies the relation that 10 -7/(R1*t)≤ω1≤10-4/(R1*t),R1 represents the radius of the wafer (10) or half of the maximum length of the wafer (10), t represents the time of the laser residing on the bonding layer (30) everywhere, or,
The processing table (60) is controlled to rotate at a second rotational angular speed omega 2, wherein the value of the second rotational angular speed omega 2 satisfies the relation that 10 -7/(R1*t)≤ω2≤10-4/(R1*t),R1 represents the radius of the wafer (10) or half of the maximum length of the wafer (10), and t represents the time for which the laser resides everywhere on the bonding layer (30).
3. The wafer debonding method of claim 1, wherein the step of controlling the laser light source (40) to rotate in a first plane about the bonding layer (30) and/or controlling the processing station (60) to spin comprises:
controlling the laser light source (40) to rotate in a first rotation direction in the first plane by taking the bonding layer (30) as a center, and controlling the processing table (60) to rotate in a second rotation direction opposite to the first rotation direction or rotate in the first rotation direction, wherein the angular speed omega 1 of the laser light source (40) is different from the angular speed omega 2 of the wafer (10) and the carrier (20);
Wherein when the laser light source (40) and the processing table (60) rotate along the first rotation direction, the numerical value of the angular velocity omega 1 of the laser light source (40) and the numerical value of the angular velocity omega 2 of the processing table (60) satisfy the relation of 10 -7/(R1*t)≤ω1-ω2≤10-4/(R1 x t), and when the laser light source (40) and the processing table (60) rotate along the opposite direction, the numerical value of the angular velocity omega 1 of the laser light source (40) and the numerical value of the angular velocity omega 2 of the processing table (60) satisfy the relation of 10 -7/(R1*t)≤ω1+ω2≤10-4/(R1*t),R1 representing the radius of the wafer (10) or half of the maximum length of the wafer (10), and t represents the time when the laser resides on the bonding layer (30).
4. The wafer debonding method of claim 1, the wafer de-bonding method is characterized by further comprising the following steps:
Adjusting the laser beam (41) with a laser spot adjuster (50) such that the diameter of the spot of the laser beam (41) is smaller than or equal to the thickness of the bonding layer (30), and/or,
The laser light source (40) is controlled to move along the height direction of the bonding layer (30) so that a light spot of the laser beam (41) irradiated on the bonding layer (30) is positioned between the surface of the bonding layer (30) in contact with the wafer (10) and the surface of the carrier (20) on the side facing away from the wafer (10) in the thickness direction of the bonding layer (30).
5. Wafer debonding method according to any of the claims 1 to 4, characterized in that the step after moving the laser light source (40) into a first plane in height direction with the bonding layer (30) between the wafer (10) and the carrier (20) comprises:
The laser light source (40) is controlled to move in a direction approaching or separating from the bonding layer (30) so that the distance between the laser light source (40) and the geometric center of the bonding layer (30) is smaller than or equal to a first preset distance.
6. The wafer debonding method according to any of the claims 1 to 4, characterized in that the focal length of the laser beam (41) is located within the bonding layer (30), the step S3 is followed by a step comprising:
-separating the bonding layer (30) remaining between the wafer (10) and the carrier (20) by at least one of direct cutting, gas cutting, solvent jet separation, ultrasonic vibration separation, thermal separation and tensile separation.
7. The wafer debonding method of any of claims 1 to 4, wherein the carrier (20) comprises a light transmissive carrier and a non-light transmissive carrier;
Wherein the light-transmitting carrier comprises at least one of a glass carrier, a quartz carrier, a diamond carrier, a silicon carbide carrier and a sapphire carrier;
The non-light-transmitting carrier comprises at least one of a titanium carbide carrier, a silicon carrier, a gallium arsenide carrier, an indium phosphide carrier, a gallium nitride carrier, a ceramic carrier, a copper carrier and a steel carrier.
8. The wafer debonding method of any of claims 1 to 4, wherein the step after controlling the laser light source (40) to emit the laser beam (41) further comprises:
a control gas sweeps the contact point of the laser beam (41) and the bonding layer (30) to remove gas or impurities generated when the bonding layer (30) is decomposed or ablated.
9. The wafer debonding method of any of claims 1 to 4, wherein the step of securing the wafer (10) and the carrier (20) comprises:
Fixing at least one of the wafer (10) and the carrier (20), applying a tensile force in the thickness direction of the bonding layer (30) to at least one of the wafer (10) and the carrier (20), and applying a tensile force in the opposite direction to the wafer (10) and the carrier (20).
10. The wafer debonding method of any of claims 1 to 4, wherein the laser light source (40) comprises at least one of an ultraviolet laser light source and an infrared laser light source;
Wherein the wavelength lambda 1 of the laser beam (41) of the ultraviolet laser source satisfies the relation that lambda 1 is less than or equal to 10nm and less than or equal to 400nm, and/or,
The wavelength lambda 2 of the laser beam (41) of the infrared laser source meets the relation that lambda 2 is less than or equal to 1 mu m and less than or equal to 11 mu m.
CN202510502585.5A 2025-04-21 2025-04-21 Wafer Debonding Method Pending CN120306830A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121054493A (en) * 2025-09-03 2025-12-02 宁波美慎电子有限公司 A wafer pair debonding method

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0729832A (en) * 1993-07-15 1995-01-31 Sony Corp Film forming apparatus and film forming method using the same
CN101222014A (en) * 2008-01-31 2008-07-16 金芃 vertical semiconductor chip
KR101323108B1 (en) * 2013-03-18 2013-10-30 주식회사 에코프로 Honeycomb rotor type vocs removal system with horizontally polarized microwave radiation
CN103890908A (en) * 2011-10-18 2014-06-25 富士电机株式会社 Solid-phase bonded wafer support substrate detachment method and semiconductor device fabrication method
CN108269738A (en) * 2016-12-30 2018-07-10 上海新昇半导体科技有限公司 Wafer stripping apparatus and method based on horizontal laser light irradiation
CN218169060U (en) * 2022-08-29 2022-12-30 深圳市单色科技有限公司 Wafer laser bonding-breaking system based on two-dimensional acousto-optic deflector
CN115732310A (en) * 2021-08-30 2023-03-03 东莞新科技术研究开发有限公司 Method for cleaning semiconductor surface contaminants
KR20240074013A (en) * 2022-06-15 2024-05-27 웨스턴 디지털 테크놀로지스, 인코포레이티드 Semiconductor wafers thinned by horizontal stealth lasing
CN118866702A (en) * 2024-07-18 2024-10-29 上海市激光技术研究所有限公司 Laser debonding process and device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0729832A (en) * 1993-07-15 1995-01-31 Sony Corp Film forming apparatus and film forming method using the same
CN101222014A (en) * 2008-01-31 2008-07-16 金芃 vertical semiconductor chip
CN103890908A (en) * 2011-10-18 2014-06-25 富士电机株式会社 Solid-phase bonded wafer support substrate detachment method and semiconductor device fabrication method
KR101323108B1 (en) * 2013-03-18 2013-10-30 주식회사 에코프로 Honeycomb rotor type vocs removal system with horizontally polarized microwave radiation
CN108269738A (en) * 2016-12-30 2018-07-10 上海新昇半导体科技有限公司 Wafer stripping apparatus and method based on horizontal laser light irradiation
CN115732310A (en) * 2021-08-30 2023-03-03 东莞新科技术研究开发有限公司 Method for cleaning semiconductor surface contaminants
KR20240074013A (en) * 2022-06-15 2024-05-27 웨스턴 디지털 테크놀로지스, 인코포레이티드 Semiconductor wafers thinned by horizontal stealth lasing
CN118202455A (en) * 2022-06-15 2024-06-14 西部数据技术公司 Semiconductor wafer thinned by horizontal invisible laser irradiation
CN218169060U (en) * 2022-08-29 2022-12-30 深圳市单色科技有限公司 Wafer laser bonding-breaking system based on two-dimensional acousto-optic deflector
CN118866702A (en) * 2024-07-18 2024-10-29 上海市激光技术研究所有限公司 Laser debonding process and device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121054493A (en) * 2025-09-03 2025-12-02 宁波美慎电子有限公司 A wafer pair debonding method

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