CN121013473A - Solar cells, their fabrication methods, and applications - Google Patents

Solar cells, their fabrication methods, and applications

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Publication number
CN121013473A
CN121013473A CN202511365430.8A CN202511365430A CN121013473A CN 121013473 A CN121013473 A CN 121013473A CN 202511365430 A CN202511365430 A CN 202511365430A CN 121013473 A CN121013473 A CN 121013473A
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CN
China
Prior art keywords
passivation layer
layer
solar cell
region
doped region
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Pending
Application number
CN202511365430.8A
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Chinese (zh)
Inventor
朱响彬
吴成坤
陈德爽
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Hengdian Group DMEGC Magnetics Co Ltd
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Hengdian Group DMEGC Magnetics Co Ltd
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Publication date
Application filed by Hengdian Group DMEGC Magnetics Co Ltd filed Critical Hengdian Group DMEGC Magnetics Co Ltd
Priority to CN202511365430.8A priority Critical patent/CN121013473A/en
Publication of CN121013473A publication Critical patent/CN121013473A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)

Abstract

The application discloses a solar cell, a preparation method and application thereof. The solar cell manufacturing method comprises the steps of manufacturing a first doped region, an isolation region and a second doped region on one side surface of a substrate, wherein the first doped region and the second doped region are electrically isolated by the isolation region, manufacturing a first passivation layer on the first doped region, the isolation region and the second doped region, and manufacturing a second passivation layer on the other side surface of the substrate, wherein the thickness of the first passivation layer is smaller than that of the second passivation layer by 0.1-17 nm. According to the passivation structure of the solar cell provided by the application, through the optimized preparation method, the thin first passivation layer and the thick second passivation layer are arranged, and the proper thickness difference can provide a good passivation effect, and the risk of rupture of the first doped region and the second doped region on the same side due to stress concentration can be avoided, so that the solar cell has the advantages of high conversion efficiency, high open voltage and larger current density.

Description

Solar cell, preparation method and application thereof
Technical Field
The application relates to the technical field of photovoltaics, in particular to a solar cell, a preparation method and application thereof.
Background
The TBC solar cell (TOPCon Back Contact) is a Gao Xiaojing silicon solar cell based on a deep integration of a tunnel oxide passivation contact (TOPCon) technology with a Back Contact (BC) structure. The method has the core innovation that the design of the back contact electrode without the grid line on the front surface is combined with the passivation layer of TOPCon, the surface recombination rate of carriers is obviously reduced by introducing an ultrathin tunneling oxide layer and a phosphorus/boron doped polysilicon layer on the back surface of the battery, and meanwhile, the accurate preparation of the back finger-crossing metal electrode is realized by utilizing a laser patterning technology, so that the optical shielding and the resistance loss are effectively reduced. It is expected to achieve higher efficiency and performance, which is critical for the next generation of solar solutions.
The TBC solar cell in the prior art needs to be subjected to double-sided passivation on the light receiving surface and the backlight surface, but the passivation structure of the TBC solar cell in the prior art cannot guarantee good passivation effect and does not have the problem of film explosion.
Disclosure of Invention
Based on the above, it is necessary to provide a solar cell having a good passivation effect and no rupture, and a method for manufacturing the same and applications thereof.
The application provides a preparation method of a solar cell, which comprises the following steps:
Preparing a first doped region, an isolation region and a second doped region on one side surface of a substrate, wherein the first doped region and the second doped region are electrically isolated by the isolation region;
A first passivation layer is prepared over the first doped region, the isolation region and the second doped region,
Preparing a second passivation layer on the other side surface of the substrate;
The thickness of the first passivation layer is smaller than that of the second passivation layer, and the difference between the thickness of the second passivation layer and that of the first passivation layer is 0.1-17 nm.
In one embodiment, one or both of the following conditions are satisfied:
(1) The thickness of the first passivation layer is 1 nm-5 nm;
(2) The thickness of the second passivation layer is 5 nm-19 nm.
In one embodiment, the conditions for preparing the first passivation layer satisfy one or more of the following:
(1) The preparation temperature is 250-450 ℃;
(2) The preparation time is 10 s-100 s;
(3) The preparation power is 5000 w-8000 w.
In one embodiment, the conditions for preparing the second passivation layer satisfy one or more of the following:
(1) The preparation temperature is 250-450 ℃;
(2) The preparation time is 100 s-300 s;
(3) The preparation power is 5000 w-8000 w.
In one embodiment, preparing the first doped region, the isolation region, and the second doped region on one side surface of the substrate includes the steps of:
Sequentially arranging a first tunneling material and a first doping material on one side surface of the substrate, and removing the first tunneling material and the first doping material on a first area for forming the isolation area and a second area for forming the second doping area;
and sequentially setting a second tunneling material and a second doping material on one side surface of the substrate, removing the first tunneling material, the first doping material, the second tunneling material and the second doping material formed on the other side surface of the substrate by winding plating, removing the first region, the second tunneling material and the second doping material on a third region for forming the first doping region, preparing a first doping region comprising a laminated first tunneling layer and a first doping layer, and a second doping region comprising a laminated second tunneling layer and a second doping layer, wherein the first doping region and the second doping region are electrically isolated by the isolation region.
In one embodiment, one or both of the following conditions are satisfied:
(1) Further comprising the step of preparing a first anti-reflective layer after preparing the first passivation layer and before preparing the second passivation layer;
(2) The step of preparing a second anti-reflection layer is further included after preparing the second passivation layer.
The application also provides a solar cell manufactured according to the manufacturing method.
In one embodiment, the semiconductor device further comprises a first anti-reflection layer disposed on the first passivation layer;
optionally, a second anti-reflection layer disposed on the second passivation layer is further included.
In one embodiment, one or more of the following conditions are satisfied:
(1) The thickness of the first anti-reflection layer is 70 nm-95 nm;
(2) The refractive index of the first anti-reflection layer is 2.05-2.15;
(3) The thickness of the second anti-reflection layer is 65 nm-85 nm;
(4) The refractive index of the second anti-reflection layer is 1.90-2.10;
(5) The material of the first passivation layer and the material of the second passivation layer are each independently one or more of aluminum oxide, silicon oxide, and hydrogenated amorphous silicon.
The application also provides a photovoltaic module, and the power supply device comprises the solar cell prepared by the preparation method or the solar cell.
According to the passivation structure of the solar cell provided by the application, through the optimized preparation method, the thin first passivation layer and the thick second passivation layer are arranged, and the proper thickness difference between the first passivation layer and the second passivation layer can provide a good passivation effect, and the risk of rupture membrane generated in the first doping region and the second doping region on the same side due to stress concentration can be avoided, so that the solar cell has high conversion efficiency, high open voltage and larger current density.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a solar cell of example 1.
Fig. 2 is a microscopic view of the surface of the first passivation layer in the solar cell of example 1.
Fig. 3 is a microscopic view of the surface of the first passivation layer in the solar cell of comparative example 1.
Reference numerals illustrate 110 a substrate, 121 a first tunneling layer, 122 a second tunneling layer, 131 a first doped layer, 132 a second doped layer, 140 a first passivation layer, 150 a first anti-reflection layer, 160 a second passivation layer, 170 a second anti-reflection layer, 180 a first electrode, 190 a second electrode.
Detailed Description
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
The term "and/or" as used herein includes the scope of selection of any one of two or more of the items listed in relation to each other and also includes any and all combinations of the items listed in relation to each other, including any two of the items listed in relation to each other, any more of the items listed in relation to each other, or all combinations of the items listed in relation to each other. For example, "a and/or B" includes A, B and "a and B in combination" three parallel schemes.
In this document, unless otherwise indicated, "one or more" means any one of the listed items or any combination of the listed items. Similarly, "one or more" and the like are otherwise indicated for the case of "one or more", and the same is understood unless otherwise indicated.
Herein, "further," "still further," "special," "such as," "for example," "illustrated," etc. are used for descriptive purposes to indicate that there is a relationship between the various claims that follow and that they cover, but are not to be construed as limiting the prior art nor as limiting the scope of protection herein. In this context, a (e.g., B), where B is one non-limiting example of a, is understood not to be limited to B, unless otherwise stated.
Herein, "optional" refers to the presence or absence of the possibility, i.e., to any one of the two juxtaposed schemes selected from "with" or "without". If multiple "alternatives" occur in a technical solution, if no particular description exists and there is no contradiction or mutual constraint, then each "alternative" is independent. In the present application, "optionally containing", and the like are described, meaning "containing or not containing". "optional component X" means that component X is present or absent, or that component X is present or absent.
Herein, in the "first aspect", "second aspect", "third aspect", "fourth aspect", etc., the terms "first", "second", "third", "fourth", etc. are used for descriptive purposes only, and are not to be construed as indicating or implying a relative importance or quantity, nor are they to be construed as implying an importance or quantity of the indicated technical features. Moreover, the terms "first," "second," "third," "fourth," and the like are used for non-exhaustive list description purposes only, and are not to be construed as limiting the number of closed forms.
In this context, the technical features described in open form include closed technical solutions composed of the listed features, and also include open technical solutions containing the listed features.
Herein, reference is made to a value interval (i.e., a range of values), where the distribution of the values selected within the value interval is considered continuous, and includes two value endpoints (i.e., a minimum value and a maximum value) of the value interval, and each value between the two value endpoints, unless otherwise indicated. When a numerical range merely points to integers within the numerical range, unless expressly stated otherwise, both endpoints of the numerical range are inclusive of the integer between the two endpoints, and each integer between the two endpoints is equivalent to the integer directly recited. When multiple numerical ranges are provided to describe a feature or characteristic, the numerical ranges may be combined. In other words, unless otherwise indicated, the numerical ranges disclosed herein are to be understood as including any and all subranges subsumed therein. The "numerical value" in the numerical interval may be any quantitative value, such as a number, a percentage, a proportion, or the like. "numerical intervals" allows for the broad inclusion of numerical interval types such as percentage intervals, proportion intervals, ratio intervals, and the like.
Herein, the term "room temperature" or "normal temperature" generally refers to 4 ℃ to 35 ℃, e.g., 20±5 ℃. In some embodiments herein, "room temperature" or "normal temperature" refers to 10 ℃ to 30 ℃. In some embodiments herein, "room temperature" or "normal temperature" refers to 20 ℃ to 30 ℃.
In this document, a plurality of steps are referred to in a method flow, and unless explicitly stated differently herein, the steps are not strictly limited to the order of execution, which may be performed in other orders than as described. Moreover, any step may comprise a plurality of sub-steps or phases, which are not necessarily performed at the same time, but may be performed at different times, the order of their execution is not necessarily sequential, but may be performed in turn or alternately or simultaneously with other steps or sub-steps or portions of phases of other steps.
The application provides a preparation method of a solar cell, which comprises the following steps of S100-S300:
s100, preparing a first doped region, an isolation region and a second doped region on one side surface of the substrate, wherein the first doped region and the second doped region are electrically isolated by the isolation region.
S200, preparing a first passivation layer on the first doped region, the isolation region and the second doped region.
S300, preparing a second passivation layer on the other side surface of the substrate;
The thickness of the first passivation layer is smaller than that of the second passivation layer, and the difference between the thickness of the second passivation layer and that of the first passivation layer is 0.1-17 nm.
According to the passivation structure of the solar cell provided by the application, through the optimized preparation method, the thin first passivation layer and the thick second passivation layer are arranged, and the proper thickness difference between the first passivation layer and the second passivation layer can provide a good passivation effect, and the risk of rupture membrane generated in the first doping region and the second doping region on the same side due to stress concentration can be avoided, so that the solar cell has high conversion efficiency, high open voltage and larger current density.
In one specific example, preparing the first doped region, the isolation region, and the second doped region on one side surface of the substrate includes the steps of:
Sequentially arranging a first tunneling material and a first doping material on one side surface of a substrate, and removing the first tunneling material and the first doping material on a first region for forming an isolation region and a second region for forming a second doping region;
And sequentially arranging a second tunneling material and a second doping material on one side surface of the substrate, removing the first tunneling material, the first doping material, the second tunneling material and the second doping material which are formed on the other side surface of the substrate in a surrounding manner, removing the first region and the second tunneling material and the second doping material which are used for forming a third region of the first doping region, preparing a first doping region comprising a laminated first tunneling layer and a first doping layer, and a second doping region comprising a laminated second tunneling layer and a second doping layer, wherein the first doping region and the second doping region are electrically isolated by an isolation region.
Further, the preparation method of the first doped region, the isolation region and the second doped region comprises the following steps:
S110, sequentially depositing a first tunneling material and first intrinsic polycrystalline silicon on one side surface of a substrate, doping a first element into the first intrinsic polycrystalline silicon, and preparing a first tunneling layer, a first doping layer and a first doping glass layer;
S120, removing the first doped glass layer on one side surface of the substrate, a first region for forming an isolation region, a part of the first tunneling layer and a part of the first doped layer on a second region for forming a second doped region, and preparing a first doped region;
s130, sequentially depositing a second tunneling material and second intrinsic polycrystalline silicon on the surface of the same side of the substrate again, doping a second element, and preparing a second tunneling layer, a second doping layer and a second doped glass layer;
s140, removing the second doped glass layer, the first region and part of the second tunneling layer and part of the second doped layer on the surface of one side of the substrate, and forming a third region of the first doped region to prepare a second doped region and an isolation region;
S150, removing the winding plating formed on the other side surface of the substrate.
It will be appreciated that due to equipment or process limitations, the corresponding materials of the first doped region and the second doped region are formed on the same side surface of the substrate, and the corresponding materials are also formed on the other side surface of the substrate, so that the substrate can be removed as required.
Further, after the removal of the plating and before the step S200, a step S160 of texturing the surface of the isolation region and texturing the surface of the substrate without the isolation region is further included.
Further, the method of removing part of the first doped layer and part of the second doped layer may be, but not limited to, laser removal, specifically, but not limited to, green light or ultraviolet picosecond laser, and the laser power is 50 w-150 w.
In a specific example, the method of preparing the first passivation layer may be, but is not limited to, chemical vapor deposition, and further, chemical vapor deposition may be, but is not limited to, plasma enhanced chemical vapor deposition.
Further, the preparation temperature of the first passivation layer is 250 to 450 ℃, specifically, the preparation temperature of the first passivation layer may be, but not limited to, 250, 260, 270, 280, 290, 300, 310, 320, 330, 340, 350, 360, 370, 380, 390, 400, 410, 420, 430, 440 or 450.
In one specific example, the preparation time of the first passivation layer is 10s to 100s, and specifically, the preparation time of the first passivation layer may be, but not limited to, 10s, 20s, 30s, 40s, 50s, 60s, 70s, 80s, 90s, or 100s.
In one specific example, the first passivation layer is prepared with a preparation power of 5000w to 5000 w. Specifically, the preparation power of the first passivation layer may be, but is not limited to, 5000w, 5500w, 6000w, 6500w, 7000w, 7500w, or 8000w.
In one specific example, the second passivation layer is prepared at a preparation temperature of 250 to 450 ℃, and in particular, the second passivation layer may be prepared at a preparation temperature of 250, 260, 270, 280, 290, 300, 310, 320, 330, 340, 350, 360, 370, 380, 390, 400, 410, 420, 430, 440, or 450, but not limited thereto.
In one specific example, the preparation time of the second passivation layer is 100s to 300s, and specifically, the preparation time of the second passivation layer may be, but not limited to, 100s, 150s, 200s, 250s, or 300s.
In one specific example, the second passivation layer is prepared with a preparation power of 5000w to 5000 w. Specifically, the preparation power of the second passivation layer may be, but is not limited to, 5000w, 5500w, 6000w, 6500w, 7000w, 7500w, or 8000w.
In a specific example, the method further includes the step of preparing the first anti-reflective layer after preparing the first passivation layer and before preparing the second passivation layer.
In one specific example, the temperature of the first anti-reflection layer is 400 ℃ to 600 ℃, the time is 900s to 1500s, the flow rate of SiH 4 is 800 to 3000sccm, the flow rate of NH 3 is 7000 to 15000sccm, and the power is 10000w to 15000w.
Specifically, the temperature at which the first anti-reflection layer is prepared may be, but not limited to, 400 ℃, 450 ℃, 500 ℃, 550 ℃, or 600 ℃, and the time may be, but not limited to, 900s, 1000s, 1100s, 1200s, 1300s, 1400s, or 1500s. The power may be, but is not limited to 10000w, 11000w, 12000w, 13000w, 14000w, or 15000w.
In a specific example, the step of preparing the second anti-reflective layer is further included after preparing the second passivation layer.
In one embodiment, the second anti-reflective layer is prepared at a temperature of 400 ℃ to 600 ℃ for 700s to 1000s, at a flow rate of 800 to 3000sccm for SiH 4, at a flow rate of 7000 to 15000sccm for NH 3, and at a power of 10000w to 17000w.
In particular, the temperature at which the second anti-reflection layer is prepared may be, but is not limited to, 400 ℃, 450 ℃, 500 ℃, 550 ℃, or 600 ℃ and the time may be, but is not limited to, 700s, 800s, 900s, or 1000s. The power may be, but is not limited to 10000w, 11000w, 12000w, 13000w, 14000w, 15000w, 16000w, or 17000w.
According to the solar cell for reducing the rupture membrane and the preparation method thereof, disclosed by the application, the aluminum oxide is deposited step by step in a tubular PECVD (plasma enhanced chemical vapor deposition) mode, so that the aluminum oxide on the front surface is thicker, and the passivation effect of the pyramid suede on the front surface of the cell is obviously enhanced; the TBC solar cell and the preparation method thereof have the characteristics of excellent passivation contact performance, high conversion efficiency, high voltage and high current density, and the solar cell and the preparation method thereof deposit aluminum oxide and silicon nitride in a tubular PECVD two-in-one mode, thereby reducing a single ALD process, simplifying the process flow and being suitable for large-scale production.
In one specific example, the thickness of the first passivation layer is 1nm to 5nm, and specifically, the thickness of the first passivation layer may be, but not limited to, 1nm, 2nm, 3nm, 4nm, or 5nm.
In one specific example, the thickness of the second passivation layer is 5nm to 19nm, and in particular, the thickness of the second passivation layer may be, but not limited to, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 4nm, 5nm, 6nm, 17nm, 18nm, or 19nm.
In a specific example, the material of the first passivation layer and the material of the second passivation layer are each independently one or more of aluminum oxide, silicon oxide, and hydrogenated amorphous silicon.
In one specific example, the semiconductor device further includes a first anti-reflection layer disposed on the first passivation layer, and a second anti-reflection layer disposed on the second passivation layer.
In one specific example, the thickness of the first anti-reflection layer is 70 nm to 95nm, and specifically, the thickness of the first anti-reflection layer may be, but not limited to, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm or 95 nm.
In a specific example, the refractive index of the first anti-reflection layer is 2.05-2.15, and specifically, the refractive index of the first anti-reflection layer may be, but not limited to, 2.05, 2.06, 2.07, 2.08, 2.09, 2.1, 2.11, 2.12, 2.13, 2.14, or 2.15.
In one specific example, the thickness of the second anti-reflection layer is 65nm to 85nm, and the thickness of the second anti-reflection layer may be, but is not limited to, 65nm, 70nm, 75nm, 80nm, or 85nm.
In a specific example, the refractive index of the second anti-reflection layer is 1.90-2.10. The refractive index of the second anti-reflection layer may be, but is not limited to, 1.9, 1.91, 1.92, 1.93, 1.94, 1.95, 1.96, 1.97, 1.98, 1.99, 2, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, or 2.1.
It is understood that the solar cell described above may be, but is not limited to, a TBC solar cell or a Topcon solar cell.
Further, the application also provides a photovoltaic module, and a power supply device of the photovoltaic module comprises the solar cell manufactured by the manufacturing method or the solar cell.
The present application will be described in further detail with reference to specific examples. It is to be understood that these examples are illustrative of the present application and are not intended to limit the scope of the present application. The experimental methods in the following examples, in which specific conditions are not noted, are preferably referred to the guidelines given in the present application, and may be according to the experimental manual or conventional conditions in the art, the conditions suggested by the manufacturer, or the experimental methods known in the art.
In the specific examples described below, the measurement parameters relating to the raw material components, unless otherwise specified, may have fine deviations within the accuracy of weighing. Temperature and time parameters are involved, allowing acceptable deviations from instrument testing accuracy or operational accuracy. "Normal temperature" means 25 ℃, and "normal pressure" means 100KPa or 101KPa.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
Example 1
The present embodiment provides a solar cell 10, whose structure is shown in fig. 1, including a substrate 110, a first tunneling layer 121, a second tunneling layer 122, a first doping layer 131, a second doping layer 132, a first passivation layer 140, a first anti-reflection layer 150, a second passivation layer 160, a second anti-reflection layer 170, a first electrode 180, and a second electrode 190. The first doped region includes the first tunneling layer 121 and the first doped layer 131, and the second doped region includes the second tunneling layer 122 and the second doped layer 132.
S1, a silicon wafer is used as a substrate 110, and the surface of the silicon wafer is subjected to double-sided polishing.
S2, double-sided deposition of a first tunneling oxide material silicon oxide and an intrinsic polysilicon material, and diffusion by a boron source, and forming a double-sided boron doped polysilicon layer and a BSG layer on two sides of the substrate, wherein the thickness of the boron doped polysilicon layer is 300nm, and the thickness of the BSG layer is 55nm.
S3, laser grooving 1, and removing the BSG layer on the second doped region and the isolation region on the back of the substrate 110, wherein the laser adopts a green picosecond laser with the power of 80w.
And S4, alkali cleaning 1, namely removing the boron doped polysilicon layer and the first tunneling oxide material on the second doped region and the isolation region on the back surface of the substrate 110, and preparing a first tunneling layer 121 and a first doped layer 131.
And S5, double-sided deposition of a second tunneling oxide material and an intrinsic polycrystalline silicon material, and back surface phosphorus source diffusion to form a phosphorus doped polycrystalline silicon layer and a PSG layer on the back surface of the substrate 110, wherein the thickness of the phosphorus doped polycrystalline silicon layer is 300nm, and the thickness of the PSG layer is 60nm.
And S6, laser grooving 2, and removing the PSG layer on the first doping region and the isolation region on the back, wherein the laser adopts a green picosecond laser with the power of 60w.
And S7, alkali cleaning 2, and removing the phosphorus doped polysilicon material and the second tunneling oxide material on the first doped region and the isolation region on the back surface to prepare a second tunneling layer 122 and a second doped layer 132.
And S8, etching to remove the boron doped polysilicon material and the first tunneling oxide material on the side surface and the phosphorus doped polysilicon material and the second tunneling oxide material on the front surface.
S8, texturing to enable the isolation areas on the front surface and the back surface of the silicon wafer to form pyramid textured surfaces.
S9, adopting a tubular PECVD two-in-one mode to deposit aluminum oxide on the back of the silicon wafer as the first passivation layer 140 and the first anti-reflection layer 150, wherein the thickness of the aluminum oxide is 4nm, the deposition temperature is 300 ℃, the time is 60S, the flow rate of N 2 O is 6000sccm, the flow rate of TMA is 55sccm, the power is 6000w, the thickness of the first anti-reflection layer 150 is 90nm, the refractive index is 2.13, the deposition temperature is 530 ℃, the time is 1000S, the flow rate of SiH 4 is 1200sccm, the flow rate of NH 3 is 11000sccm, and the power is 13500w.
S10, adopting a tubular PECVD two-in-one mode to deposit aluminum oxide on the front surface of the silicon wafer as the second passivation layer 160 and the second anti-reflection layer 170, wherein the thickness of the aluminum oxide is 7nm, the deposition temperature is 300 ℃, the time is 200S, the flow rate of N 2 O is 6000sccm, the flow rate of TMA is 65sccm, the power is 7000w, the thickness of the second anti-reflection layer 170 is 78nm, the refractive index is 2.02, the deposition temperature is 530 ℃, the time is 850S, the flow rate of SiH 4 is 2000sccm, the flow rate of NH 3 is 13000sccm, the flow rate of N 2 O is 12000sccm, and the power is 15000w.
And S11, printing electrode slurry on the first doped region and the first doped region, and sintering to form a first electrode 180 and a second electrode 190 which form ohmic contact with the first doped region and the second doped region, so as to finally prepare the solar cell 10.
Example 2
The preparation method of the solar cell provided in this embodiment is only that the thickness of the back side anti-reflection layer is 90nm, the refractive index is 2.20, the time is 800s, the flow rate of sih 4 is 2200sccm, and the thickness, the deposition temperature, the flow rate of NH 3, the power and the like of the back side anti-reflection layer are the same as those of embodiment 1, compared with embodiment 1.
Comparative example 1
This comparative example provides a method for manufacturing a solar cell, which is similar to example 1 only in that the back side alumina thickness is the same as the front side alumina thickness of example 1, and is also 7nm, and the deposition time, temperature, flow rate, etc. are the same as those of the front side alumina.
Comparative example 2
This comparative example provides a method for manufacturing a solar cell, which is similar to example 1 only in that the front side alumina thickness is the same as the back side alumina thickness of example 1, and is also 4nm, and the deposition time, temperature, flow rate, etc. are the same as the back side alumina.
Comparative example 3
The comparative example provides a method for manufacturing a solar cell, which is compared with example 1 only in that the front side alumina thickness is 22nm, and the deposition time, temperature, flow rate, power, etc. of the front side anti-reflection layer are the same as those of example 1.
Comparative example 4
This comparative example provides a method for manufacturing a solar cell, which is compared with example 1 only in that the back side alumina has a thickness of 1nm, the front side alumina has a thickness of 20nm, and the deposition temperature and flow rate of the back side alumina are the same as those of the front side alumina.
The conversion efficiencies of the TBC solar cells obtained in examples 1 to 2 and comparative examples 1 to 4 were measured using Halm tester, and the results are shown in Table 1.
TABLE 1
As can be seen from a combination of examples 1-2 and comparative examples 1-4, as shown in fig. 2, which is a microscopic view of the surface of the first passivation layer in the solar cell of example 1, the solar cell did not have the problem of bursting films.
Since the front side alumina and the back side alumina in comparative example 1 are both thicker, the white dot-like part is the bursting film phenomenon occurring on the surface of the first passivation layer alumina as shown in fig. 3, so that the passivation effect on the back side Poly of comparative example 1 is poor, leading to lower open voltage, short current and filling factor, and lower conversion efficiency.
The front side alumina and the back side alumina in comparative example 2 are both relatively thin, and the back side boron doped polysilicon and the phosphorus doped polysilicon have no rupture membrane phenomenon, however, the front side field passivation and the chemical passivation effect are poor due to the thinner alumina, so that the open pressure, the short flow and the filling of comparative example 2 are relatively low, and the conversion efficiency is also low.
Comparative examples 3-4 have too great difference in thickness between front side alumina and back side alumina, resulting in too poor hydrogen passivation and chemical passivation effects of back side doped polysilicon, resulting in lower open pressure, short flow and packing of comparative examples 3-4, and lower conversion efficiency.
The above examples merely represent a few embodiments of the present application, which facilitate a specific and detailed understanding of the technical solutions of the present application, but are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. It should be understood that those skilled in the art, based on the technical solutions provided by the present application, can obtain technical solutions through logical analysis, reasoning or limited experiments, all fall within the protection scope of the appended claims. The scope of the patent is therefore intended to be covered by the appended claims, and the description and drawings may be interpreted as illustrative of the contents of the claims.

Claims (10)

1.一种太阳能电池的制备方法，其特征在于，包括以下步骤：1. A method for preparing a solar cell, characterized by comprising the following steps: 在基底的一侧表面上制备第一掺杂区、隔离区以及第二掺杂区，所述第一掺杂区以及所述第二掺杂区被所述隔离区电隔离；A first doped region, an isolation region, and a second doped region are formed on one side surface of a substrate, wherein the first doped region and the second doped region are electrically isolated by the isolation region; 在所述第一掺杂区、所述隔离区以及所述第二掺杂区上制备第一钝化层，A first passivation layer is formed on the first doped region, the isolation region, and the second doped region. 在所述基底的另一侧表面上制备第二钝化层；A second passivation layer is prepared on the other side surface of the substrate; 其中，所述第一钝化层的厚度小于所述第二钝化层的厚度，所述第二钝化层的厚度与所述第一钝化层的厚度之间的差值为0.1nm~17nm。The thickness of the first passivation layer is less than the thickness of the second passivation layer, and the difference between the thickness of the second passivation layer and the thickness of the first passivation layer is 0.1 nm to 17 nm. 2.如权利要求1所述的太阳能电池的制备方法，其特征在于，满足以下一个或两个条件：2. The method for preparing a solar cell as described in claim 1, characterized in that one or two of the following conditions are met: （1）所述第一钝化层的厚度为1nm~5nm；(1) The thickness of the first passivation layer is 1 nm to 5 nm; （2）所述第二钝化层的厚度为5nm~19nm。(2) The thickness of the second passivation layer is 5nm~19nm. 3.如权利要求1或2所述的太阳能电池的制备方法，其特征在于，制备第一钝化层的条件满足以下一个或多个：3. The method for preparing a solar cell as described in claim 1 or 2, characterized in that the conditions for preparing the first passivation layer satisfy one or more of the following: （1）制备温度为250℃~450℃；(1) The preparation temperature is 250℃~450℃; （2）制备时间为10s~100s；(2) The preparation time is 10s~100s; （3）制备功率为5000w~8000w。(3) The preparation power is 5000w~8000w. 4.如权利要求1或2所述的太阳能电池的制备方法，其特征在于，制备第二钝化层的条件满足以下一个或多个：4. The method for preparing a solar cell according to claim 1 or 2, characterized in that the conditions for preparing the second passivation layer satisfy one or more of the following: （1）制备温度为250℃~450℃；(1) The preparation temperature is 250℃~450℃; （2）制备时间为100s~300s；(2) The preparation time is 100s~300s; （3）制备功率为5000w~8000w。(3) The preparation power is 5000w~8000w. 5.如权利要求1或2所述的太阳能电池的制备方法，其特征在于，在基底的一侧表面上制备第一掺杂区、隔离区以及第二掺杂区包括以下步骤：5. The method for fabricating a solar cell as described in claim 1 or 2, characterized in that fabricating a first doped region, an isolation region, and a second doped region on one side surface of the substrate comprises the following steps: 在所述基底的一侧表面上依次设置第一隧穿材料以及第一掺杂材料，去除用于形成所述隔离区的第一区域以及用于形成所述第二掺杂区的第二区域上的所述第一隧穿材料以及所述第一掺杂材料；A first tunneling material and a first doping material are sequentially disposed on one side surface of the substrate, and the first tunneling material and the first doping material on the first region for forming the isolation region and the second region for forming the second doped region are removed; 在所述基底的一侧表面上依次设置第二隧穿材料以及第二掺杂材料，去除所述基底另一侧表面上绕镀形成的所述第一隧穿材料、所述第一掺杂材料、所述第二隧穿材料以及所述第二掺杂材料，去除所述第一区域以及用于形成所述第一掺杂区的第三区域上的所述第二隧穿材料以及所述第二掺杂材料，制备包含层叠的第一隧穿层以及第一掺杂层的第一掺杂区，以及包含层叠的第二隧穿层以及第二掺杂层的第二掺杂区，所述第一掺杂区以及所述第二掺杂区被所述隔离区电隔离。A second tunneling material and a second doped material are sequentially disposed on one side surface of the substrate. The first tunneling material, the first doped material, the second tunneling material, and the second doped material formed by winding on the other side surface of the substrate are removed. The second tunneling material and the second doped material on the first region and the third region used to form the first doped region are removed. A first doped region comprising a stacked first tunneling layer and a first doped layer, and a second doped region comprising a stacked second tunneling layer and a second doped layer are prepared. The first doped region and the second doped region are electrically isolated by the isolation region. 6.如权利要求1或2所述的太阳能电池的制备方法，其特征在于，满足以下一个或两个条件：6. The method for preparing a solar cell as described in claim 1 or 2, characterized in that one or both of the following conditions are met: （1）在制备所述第一钝化层之后以及制备所述第二钝化层之前还包括制备第一减反射层的步骤；(1) The step of preparing a first antireflection layer is included after preparing the first passivation layer and before preparing the second passivation layer; （2）在制备所述第二钝化层之后还包括制备第二减反射层的步骤。(2) After preparing the second passivation layer, the step of preparing the second antireflection layer is also included. 7.一种太阳能电池，其特征在于，按照权利要求1~6任一项所述的制备方法制得的太阳能电池。7. A solar cell, characterized in that it is a solar cell prepared according to the preparation method described in any one of claims 1 to 6. 8.如权利要求7所述的太阳能电池，其特征在于，还包括设置在所述第一钝化层上的第一减反射层；8. The solar cell of claim 7, further comprising a first antireflection layer disposed on the first passivation layer; 可选地，还包括设置在所述第二钝化层上的第二减反射层。Optionally, a second antireflection layer may also be provided on the second passivation layer. 9.如权利要求8所述的太阳能电池，其特征在于，满足以下一个或多个条件：9. The solar cell according to claim 8, characterized in that it satisfies one or more of the following conditions: （1）所述第一减反射层的厚度为70 nm ~95nm；(1) The thickness of the first antireflection layer is 70 nm ~ 95 nm; （2）所述第一减反射层的折射率为2.05~2.15；(2) The refractive index of the first antireflective layer is 2.05~2.15; （3）所述第二减反射层的厚度为65nm ~85nm；(3) The thickness of the second antireflection layer is 65nm ~ 85nm; （4）所述第二减反射层的折射率为1.90~2.10；(4) The refractive index of the second antireflective layer is 1.90~2.10; （5）所述第一钝化层的材料以及所述第二钝化层的材料各自独立地为氧化铝、氧化硅以及氢化非晶硅中一种或多种。(5) The materials of the first passivation layer and the second passivation layer are each independently one or more of aluminum oxide, silicon oxide and hydrogenated amorphous silicon. 10.一种光伏组件，其特征在于，其供电装置包括如权利要求1~6任一项制备方法制备得到的太阳能电池或者权利要求7~9任一项所述的太阳能电池。10. A photovoltaic module, characterized in that its power supply device comprises a solar cell prepared by any one of claims 1 to 6 or a solar cell as described in any one of claims 7 to 9.
CN202511365430.8A 2025-09-23 2025-09-23 Solar cells, their fabrication methods, and applications Pending CN121013473A (en)

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Publication number Priority date Publication date Assignee Title
CN115172474A (en) * 2022-07-08 2022-10-11 通威太阳能(眉山)有限公司 Solar cell and preparation method thereof
WO2023123808A1 (en) * 2021-12-29 2023-07-06 泰州隆基乐叶光伏科技有限公司 Solar cell and preparation method therefor
CN116913983A (en) * 2023-08-30 2023-10-20 天合光能股份有限公司 Solar cells and manufacturing methods, photovoltaic modules and photovoltaic systems

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023123808A1 (en) * 2021-12-29 2023-07-06 泰州隆基乐叶光伏科技有限公司 Solar cell and preparation method therefor
CN115172474A (en) * 2022-07-08 2022-10-11 通威太阳能(眉山)有限公司 Solar cell and preparation method thereof
CN116913983A (en) * 2023-08-30 2023-10-20 天合光能股份有限公司 Solar cells and manufacturing methods, photovoltaic modules and photovoltaic systems

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