CN121172425B - Rectangular waveguide microstrip power divider - Google Patents
Rectangular waveguide microstrip power dividerInfo
- Publication number
- CN121172425B CN121172425B CN202511695281.1A CN202511695281A CN121172425B CN 121172425 B CN121172425 B CN 121172425B CN 202511695281 A CN202511695281 A CN 202511695281A CN 121172425 B CN121172425 B CN 121172425B
- Authority
- CN
- China
- Prior art keywords
- waveguide
- microstrip
- rectangular waveguide
- probe
- power divider
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Non-Reversible Transmitting Devices (AREA)
Abstract
本发明公开了一种矩形波导微带功分器，涉及微波器件领域，解决了现有技术在功率处理能力不足的问题。其技术方案要点是：沿矩形波导的宽边中心线方向，在上波导体和下波导体各悬置一个微带探针；其中，所述上波导体与下波导体悬置的微带探针以矩形波导的宽边中心线为对称面形成面对面的双探针结构；在两个微带探针的端面形成有波导隔离结构，以用于吸收双探针结构产生的互耦信号。
This invention discloses a rectangular waveguide microstrip power divider, relating to the field of microwave devices, which solves the problem of insufficient power processing capability in existing technologies. The key technical points are: a microstrip probe is suspended along the centerline of the wide side of the rectangular waveguide on both the upper and lower waveguides; wherein the microstrip probes suspended on the upper and lower waveguides form a face-to-face double-probe structure with the centerline of the wide side of the rectangular waveguide as the plane of symmetry; waveguide isolation structures are formed at the end faces of the two microstrip probes to absorb the mutual coupling signals generated by the double-probe structure.
Description
Technical Field
The invention relates to the field of microwave devices, in particular to a rectangular waveguide microstrip power divider.
Background
The microwave is electromagnetic wave with wavelength between 1 m-1 mm, corresponding to frequency 300 MHz-300 GHz. Microwaves are the main carrier for wireless information transmission at present, and are widely applied to the fields of communication, radars, electronic countermeasure, telemetry and remote sensing, industrial production and the like. The power divider is one of the most applied devices in the microwave circuit, and has the main functions of dividing the microwave signals into 2 paths or more coherent signals with different power magnitudes, and simultaneously, combining multiple paths of microwave signals with different powers into one path for output in turn. The frequency of the microwave signal is not changed in the whole process, and only the amplitude and the phase are changed.
The circuit forms of the power divider are various, and the power divider comprises Wilkinson bridge, lange bridge, branch line bridge, T-shaped section, magic T and other structures. According to application requirements, the microwave transmission line can be independently or mixedly realized by adopting various microwave transmission lines such as microstrip lines, strip lines, coaxial lines, coplanar waveguides, substrate integrated waveguides, rectangular waveguides and the like. The rectangular waveguide and microstrip line mixed power divider has the unique advantages that the rectangular waveguide can be used as a main port to bear high power, and the microstrip line branch end is convenient for integrating semiconductor devices. Such power splitters generally achieve signal transition and power splitting functions simultaneously by symmetrically arranging a plurality of microstrip probes inside the waveguide. The waveguide-microstrip power divider has the remarkable advantages of compact structure and small insertion loss due to the adoption of an integrated transition and power division design.
According to the different positions of the microstrip probe inserted into the waveguide, the waveguide-microstrip power divider with various structural forms can be formed. One typical structure is to symmetrically insert two microstrip probes on the same side wide edge of a rectangular waveguide, and the two probes form a face-to-face double-probe structure by taking the center of the wide edge of the waveguide as a mirror symmetry plane. The structure distributes the microwave signals in the rectangular waveguide to the two microstrip lines in the same phase with the same amplitude by coupling the microwave signals in the rectangular waveguide. However, this conventional structure has a significant limitation in that the isolation between the two microstrip probes can theoretically reach only 6dB due to the lack of an isolation circuit design, although the power distribution function is realized. This performance deficiency makes it difficult to meet the demands of phased array feeder networks, balanced mixers, and high power synthesis systems in application scenarios.
Currently, a plurality of schemes exist for improving the isolation degree of a rectangular waveguide-microstrip dual-probe power divider. For example, chinese patent CN113258244a proposes a rectangular waveguide microstrip 0 ° phase difference high isolation broadband power divider, which adopts a method of setting a non-contact thin film resistor at a position perpendicular to an end face of a microstrip probe in a rectangular waveguide, and uses the thin film resistor to absorb a vertical component of a coupling electric field between two microstrip probes, thereby improving isolation performance. However, the scheme has two main technical defects that 1) an isolation circuit adopts a suspension type structure, an effective heat conduction path is lacked, so that the power processing capacity is limited, and 2) the non-contact precision requirement of the resistor is very high, so that the structure is difficult to realize and mass production is difficult.
Disclosure of Invention
The invention aims to provide a rectangular waveguide microstrip power divider, which solves the problem of insufficient power processing capacity in the prior art.
The technical aim of the invention is realized by the following technical scheme:
The invention provides a rectangular waveguide microstrip power divider, which is characterized in that the rectangular waveguide microstrip power divider is divided into an upper waveguide body and a lower waveguide body which are mirror symmetry along the broadside central line of a rectangular waveguide, and a microstrip probe is respectively suspended on the upper waveguide body and the lower waveguide body along the broadside central line direction of the rectangular waveguide;
waveguide isolation structures are formed on the end faces of the two microstrip probes and used for absorbing mutual coupling signals generated by the double-probe structure.
In one implementation, the waveguide isolation structure includes an H-plane waveguide, a bifurcated waveguide, and an AlN-based sheet resistor.
In one implementation scheme, the H-plane waveguide orthogonal to the end face of one side of the microstrip probe is arranged at the broadside of the rectangular waveguide and is used for collecting and conducting the mutual coupling signals generated by the double-probe structure, wherein the narrow side of the H-plane waveguide is parallel to the electric field lines of the mutual coupling signals generated by the double-probe structure;
t-shaped branching is respectively carried out on one side end face of each of the two H-plane waveguides far away from the microstrip probe so as to form branched waveguides in the upper waveguide and the lower waveguide respectively;
and horizontally arranging the AlN-based thin film resistor on the branched waveguide so as to finally absorb the mutual coupling signal generated by the double-probe structure.
In one implementation, the H-plane waveguide is mutually orthogonal to the rectangular waveguide.
In one implementation scheme, a waveguide groove is formed in a rectangular waveguide on the back of the microstrip probe, wherein the width of the waveguide groove is consistent with that of the rectangular waveguide.
In one implementation, the narrow-side wall surface side of the H-surface waveguide is provided with a diaphragm.
In one implementation scheme, the back surfaces of the upper waveguide body and the lower waveguide body are respectively fixedly connected with the shaft connector through screws, the rectangular waveguide is used as an input end of the rectangular waveguide microstrip power divider, and the coaxial connectors positioned on the upper waveguide body and the lower waveguide body are used as output ends of the rectangular waveguide microstrip power divider.
In one implementation, the other side of the microstrip probe is converted to a 50Ω microstrip line by a high impedance transformation line.
In one implementation scheme, in passive application, an opening is formed in one end of the 50 omega microstrip line far away from the microstrip probe for the inner conductor of the coaxial connector to pass through from the back surface of the cavity and then be connected in a welded mode;
in active application, one end of the 50 omega microstrip line far away from the microstrip probe is bonded with MIC through a gold wire.
In one implementation, the microstrip probe is parallel to the broadside centerline of the rectangular waveguide.
Compared with the prior art, the invention has the following beneficial effects:
The invention forms a waveguide isolation terminal consisting of an H-plane waveguide, a bifurcation waveguide and an AlN-based film resistor on the end surfaces of two microstrip probes, so that the isolation of the rectangular waveguide microstrip power divider in the relative bandwidth of 20% is improved to more than 15dB, meanwhile, the AlN-based film resistor with the bottom surface closely contacted with a metal cavity is adopted to absorb the mutual coupling signal, so as to form a high-efficiency heat dissipation path, and the power processing capability is obviously improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. In the drawings:
Fig. 1 is a schematic structural diagram of a rectangular waveguide microstrip power divider according to an embodiment of the present invention;
Fig. 2 is a front view of a rectangular waveguide microstrip power divider according to an embodiment of the present invention;
Fig. 3 is a parameter simulation diagram of a rectangular waveguide microstrip power divider provided by an embodiment of the present invention.
Reference numerals and description of the drawings:
1. The high-impedance microstrip antenna comprises an upper waveguide, a lower waveguide, a rectangular waveguide, a coaxial connector, a microstrip probe, a high-impedance transformation line, a 7-50 omega microstrip line, an 8-H-plane waveguide, a 9-waveguide groove, a 10-diaphragm, an 11-bifurcation waveguide, a 12-AlN-based thin film resistor, wherein the upper waveguide is a coaxial connector, the lower waveguide is a rectangular waveguide, the coaxial connector is a coaxial connector.
Detailed Description
For the purpose of making apparent the objects, technical solutions and advantages of the present invention, the present invention will be further described in detail with reference to the following examples and the accompanying drawings, wherein the exemplary embodiments of the present invention and the descriptions thereof are for illustrating the present invention only and are not to be construed as limiting the present invention.
It is noted that the terms "comprises" or "comprising" when utilized in various embodiments of the present application are indicative of the existence of the claimed function, operation or element and do not limit the addition of one or more functions, operations or elements. Furthermore, as used in various embodiments of the application, the terms "comprises," "comprising," and their cognate terms are intended to refer to a particular feature, number, step, operation, element, component, or combination of the foregoing, and should not be interpreted as first excluding the existence of or increasing likelihood of one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing.
It should be appreciated that terms such as "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
Fig. 1 is a schematic structural diagram of a microstrip power divider of a rectangular waveguide 3 provided by the embodiment of the present invention, as shown in fig. 1, the microstrip power divider of the rectangular waveguide 3 is split into an upper waveguide 1 and a lower waveguide 2 which are mirror symmetrical along a broadside center line of the rectangular waveguide 3, and one microstrip probe 5 is suspended on each of the upper waveguide 1 and the lower waveguide 2 along the broadside center line direction of the rectangular waveguide 3, wherein the microstrip probes 5 suspended on the upper waveguide 1 and the lower waveguide 2 form a face-to-face double-probe structure with the broadside center line of the rectangular waveguide 3 as a symmetrical surface;
Waveguide isolation structures are formed on the end surfaces of the two microstrip probes 5 to absorb the mutual coupling signals generated by the double-probe structure.
Specifically, the rectangular waveguide is a metal hollow tube for transmitting microwave signals (generally with a frequency above 1 GHz), and the cross section of the rectangular waveguide is rectangular. It is one of the most basic and common transmission line structures in microwave engineering.
A suspended microstrip probe 5 is provided in the upper waveguide 1 and the lower waveguide 2, and as shown in fig. 2, the microstrip probe 5 is parallel to the center line of the broadside of the rectangular waveguide 3, and is used for coupling signals in the rectangular waveguide 3. After impedance matching is carried out on the signals through the high-impedance transformation line 6, the signals can be efficiently transmitted to the 50 omega microstrip line 7. The upper waveguide body 1 and the lower waveguide body 2 are in mirror symmetry structures, so that a face-to-face microstrip double-probe structure can be formed after the upper waveguide body and the lower waveguide body are fixedly connected. When a microwave signal is input from the rectangular waveguide 3, the microwave signal is coupled by the micro-strip double probes which are arranged in a mirror symmetry mode at the same time to form two branches, so that the power distribution function of the micro-strip of the rectangular waveguide 3 is realized.
If a microwave signal is input from any one of the microstrip probes 5, the microwave signal is coupled by the other microstrip probe 5 which is mirror symmetrical to the microstrip probe, and thus crosstalk is formed between branches of the power divider. In order to solve the problem of crosstalk between branches, the invention is provided with the H-plane waveguide 8 orthogonal to the end face of one side of the microstrip probe 5 at the broadside of the rectangular waveguide 3 for collecting and conducting the mutual coupling signals generated by the double-probe structure, and the flat rectangular waveguide is commonly called as the H-plane waveguide, and is characterized in that the electric field lines are in the vertical direction, so that the narrow side of the H-plane waveguide 8 is parallel to the electric field lines of the mutual coupling signals generated by the double-probe structure, and the mutual coupling signals can be effectively collected. In addition, when the power divider is arranged, the H-surface waveguide 8 and the rectangular waveguide 3 are mutually orthogonal, so that microwave signals transmitted in the rectangular waveguide 3 cannot enter the H-surface waveguide 8, and the normal power distribution function of the power divider is not affected.
In order to further process the mutual coupling signal generated by the double-probe structure, T-shaped branching is respectively carried out on the end surfaces of one side, far away from the microstrip probe 5, of the two H-plane waveguides 8 to respectively form branching waveguides 11 in the upper waveguide 1 and the lower waveguide 2, and the T-shaped branching waveguides 11 are connected after the H-plane waveguides 8 to divide the signal into two paths for being respectively vertically transmitted to the upper waveguide 1 and the lower waveguide 2. Finally, an AlN-based thin film resistor 12 is horizontally arranged at the terminal of the branched waveguide 11, so that the final absorption of the mutual coupling signals is realized. It can be understood that the waveguide isolation structure provided by the invention also improves the isolation degree of the rectangular waveguide 3 microstrip power divider.
The AlN-based thin film resistor is a resistor element formed on an aluminum nitride ceramic substrate by a thin film process such as physical vapor deposition. The substrate may be aluminum nitride and the resistor is a very thin (typically tens of nanometers to hundreds of nanometers) resistive film. And sputtering, evaporating and other film processes are adopted to obtain the AlN-based film resistor. The core value is to combine the excellent performance of AlN substrate with the precise characteristic of thin film technology.
As shown in fig. 3, within about 20% of the relative bandwidth with 34.5GHz as the center frequency, the rectangular waveguide 3-port echo is lower than-20 dB, the two microstrip line branch ends are transmitted with equal-3 dB equal power distribution, the echo is lower than-13 dB, and the isolation is higher than 15dB.
The invention forms a waveguide isolation terminal consisting of an H-plane waveguide 8, a bifurcated waveguide 11 and an AlN-based thin film resistor 12 on the end surfaces of two microstrip probes 5, so that the isolation of the microstrip power divider of the rectangular waveguide 3 in the relative bandwidth of 20% is improved to more than 15dB, and meanwhile, the AlN-based thin film resistor 12 with the bottom surface in close contact with a metal cavity is adopted to absorb the mutual coupling signals, thereby forming a high-efficiency heat dissipation path and remarkably improving the power processing capability.
Specifically, a waveguide groove 9 is formed in the rectangular waveguide 3 on the back surface of the microstrip probe 5, wherein the width of the waveguide groove 9 is consistent with the width of the rectangular waveguide 3. Specifically, the narrow side wall surface side of the H-surface waveguide 8 is provided with a diaphragm 10.
In this embodiment, the waveguide groove 9 and the diaphragm 10 are used to change the distributed inductance in the circuit, so as to counteract the coupling capacitance of the waveguide microstrip, thereby adjusting the impedance matching of the microstrip power divider of the rectangular waveguide 3.
Specifically, the rear surfaces of the upper waveguide body 1 and the lower waveguide body 2 are respectively fixedly connected with the shaft connector 4 through screws, the rectangular waveguide 3 is used as an input end of a microstrip power divider of the rectangular waveguide 3, and the coaxial connector 4 positioned on the upper waveguide body 1 and the lower waveguide body 2 is used as an output end of the microstrip power divider of the rectangular waveguide 3. Specifically, the other side of the microstrip probe 5 is converted into a 50Ω microstrip line 7 by a high impedance transformation line 6.
The coaxial connector 4 is mounted on the back of the cavity by means of screws, which is equivalent to connecting the outer conductor of the coaxial line with the cavity. The inner conductor of the coaxial line passes through the opening on the cavity and enters the cavity. Meanwhile, the terminal of the 50 omega microstrip line 7 in the cavity is also perforated, so that the coaxial inner conductor can also pass through the microstrip line. And welding the penetrated coaxial inner conductor and the microstrip line together, so as to realize the electric connection of the microstrip line and the coaxial inner conductor. Thereby, the radio frequency signal in the cavity can be transmitted to the coaxial connector 4 outside the cavity, and the testing is facilitated.
Specifically, in passive application, one end of the 50 Ω microstrip line 7 far away from the microstrip probe 5 is provided with an opening for the inner conductor of the coaxial connector 4 to pass through from the back of the cavity and then be welded and connected, and in active application, one end of the 50 Ω microstrip line 7 far away from the microstrip probe 5 is bonded with the MIC through a gold wire.
It should be noted that, the welding and bonding method described in this embodiment is already implemented in the prior art, so this embodiment does not redundant description of the working principle of this portion of content. When the passive application and the active application are provided, the invention has good manufacturability and MIC integration convenience, so that the invention has the dual advantages of high power capacity and easy active integration.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the scope of the invention, but to limit the invention to the particular embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202511695281.1A CN121172425B (en) | 2025-11-19 | 2025-11-19 | Rectangular waveguide microstrip power divider |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202511695281.1A CN121172425B (en) | 2025-11-19 | 2025-11-19 | Rectangular waveguide microstrip power divider |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN121172425A CN121172425A (en) | 2025-12-19 |
| CN121172425B true CN121172425B (en) | 2026-02-13 |
Family
ID=98036373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202511695281.1A Active CN121172425B (en) | 2025-11-19 | 2025-11-19 | Rectangular waveguide microstrip power divider |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN121172425B (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6707348B2 (en) * | 2002-04-23 | 2004-03-16 | Xytrans, Inc. | Microstrip-to-waveguide power combiner for radio frequency power combining |
| CN101242020B (en) * | 2008-02-29 | 2011-09-14 | 电子科技大学 | Mm wave 3dB power distribution/merging network |
| CN113258244B (en) * | 2021-04-30 | 2021-12-07 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Rectangular waveguide microstrip 0-degree-phase-difference high-isolation broadband power divider |
| CN113612000B (en) * | 2021-07-31 | 2022-06-14 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Rectangular waveguide I-shaped isolation network double-microstrip converter |
| CN118263646A (en) * | 2022-12-27 | 2024-06-28 | 成都安谱力飞科技有限公司 | Full-band waveguide microstrip power divider with probe end face isolation resistor |
-
2025
- 2025-11-19 CN CN202511695281.1A patent/CN121172425B/en active Active
Non-Patent Citations (1)
| Title |
|---|
| "微波毫米波功率合成关键技术研究";党章;《中国博士学位论文全文数据》;20250315;第2.2节-第2.3节，图2-11至2-18、图2-49至2-55 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN121172425A (en) | 2025-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4636753A (en) | General technique for the integration of MIC/MMIC'S with waveguides | |
| CN113258244B (en) | Rectangular waveguide microstrip 0-degree-phase-difference high-isolation broadband power divider | |
| CN101728620B (en) | Asymmetric coplanar waveguide directional coupler | |
| CN110994112B (en) | Orthogonal directional coupling cross structure and feed network | |
| CN112909471B (en) | A High Isolation Rectangular Waveguide-Microstrip Power Divider | |
| EP1208615B1 (en) | Four port hybrid | |
| CN113328227A (en) | Transition structure from microstrip line to non-radiative dielectric waveguide | |
| CN113612000B (en) | Rectangular waveguide I-shaped isolation network double-microstrip converter | |
| CN110277623A (en) | A kind of high isolation power synthesizer | |
| CN107342447A (en) | Millimeter wave high density spatial power synthesis network | |
| US5412354A (en) | Single layer double ring hybrid magic-tee | |
| CN116190959A (en) | A chip-to-waveguide transition device | |
| CN111834728A (en) | Coplanar Waveguide Circuit Broadband Unequal Divide One-to-two Power Divider | |
| Yu et al. | A broadband 220-ghz converter from rectangular waveguide te 10 mode to siw te 20 mode for terahertz planar integration | |
| CN109687082A (en) | Coupler in finline millimeter waveguide No. four power combiner | |
| Ogawa et al. | New MIC power dividers using coupled microstrip-slot lines: Two-sided MIC power dividers | |
| CN114335953B (en) | A kind of transition structure and its application, double-mode resonant waveguide excitation method | |
| CN121172425B (en) | Rectangular waveguide microstrip power divider | |
| CN110311201A (en) | A kind of reversed-phase power combiner | |
| CN114388998A (en) | Balanced filter jumper | |
| JP2010283625A (en) | Magic T | |
| KR100539493B1 (en) | Directioanl Coupler Using Non-radiative Dielectric waveguide | |
| CN118676567A (en) | Compact waveguide cavity multipath coupler | |
| CN218677535U (en) | A Strongly Coupled Stripline Structure for Passive Components | |
| CN117559101A (en) | High-isolation dual-waveguide probe power divider/synthesizer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |