CN121237703B - A method and system for determining the cleaning endpoint of a semiconductor process chamber. - Google Patents
A method and system for determining the cleaning endpoint of a semiconductor process chamber.Info
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- CN121237703B CN121237703B CN202511802935.6A CN202511802935A CN121237703B CN 121237703 B CN121237703 B CN 121237703B CN 202511802935 A CN202511802935 A CN 202511802935A CN 121237703 B CN121237703 B CN 121237703B
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Abstract
The invention discloses a cleaning end point judging method and a system for a semiconductor process chamber, wherein the cleaning end point judging method comprises the following steps of obtaining optical parameters of characteristic gas generated in a cleaning process, performing data processing on the optical parameters to obtain normalized absorptivity A, obtaining electrical parameters V of the characteristic gas generated in the cleaning process, and performing data processing on the optical parameters and the electrical parameters V to obtain optical end point indexesOptical weightElectrical end point indexElectrical weightingObtaining decision index S, setting first threshold of normalized absorption rate AAnd a second threshold value of the decision index SWhen the decision index S is continuously lower than the second threshold, AndWhen this is the case, it is judged that the cleaning is completed. The cleaning terminal judging system comprises a semiconductor cavity, a tail gas discharge pipeline and a detecting device, wherein the detecting device is arranged on the tail gas discharge pipeline to detect the concentration of characteristic gas in real time. The invention can improve the anti-interference capability in the detection process.
Description
Technical Field
The present invention relates to the field of semiconductor detection technology, and in particular, to a method and a system for determining a cleaning endpoint of a semiconductor process chamber.
Background
In semiconductor manufacturing, after a process chamber of a film plating apparatus such as Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD) completes several film growth, reaction byproduct film layers are accumulated on the inner wall, the gas distribution plate, the quartz window, and other parts. When the thickness of the film reaches the micron level, tiny cracking or peeling is very easy to occur due to the difference of thermal stress, a particle source is formed and directly falls on the surface of a subsequent wafer, so that irreparable defects are caused, and the yield is suddenly reduced. Meanwhile, the attached film can change the chamber heat radiation and the gas flow field, so that the film thickness, refractive index and stress drift among batches are caused, and the electrical consistency of the device is deteriorated. In addition, during the switching of different processes, the residual precursor materials (such as metal and dopant) may be doped into the next film layer to form impurity level or leakage channel. Therefore, an efficient and thorough dry cleaning of the chamber at the process gap is necessary to restore the original surface state.
In the prior art, single optical signals such as Optical Emission Spectroscopy (OES) or infrared absorption spectroscopy (IR) are commonly adopted for detecting the cleaning end point of a semiconductor film growth chamber, once an optical path is polluted by particles, a mirror surface is atomized or a window is coated, a base line drifts to cause a fixed threshold value to jump by mistake, a residual film is cleaned and stopped too early or the wall of the chamber is damaged by excessive etching, and meanwhile, the fixed threshold value cannot be self-adaptive along with the fluctuation of process pressure, temperature and power, so that the cleaning time difference among different batches of the same equipment is caused, and the equipment utilization rate is reduced.
Accordingly, there is a need for a new endpoint determination method and system for cleaning a semiconductor processing chamber that solves the above-mentioned problems of the prior art.
Disclosure of Invention
The application aims to provide a method and a system for judging a cleaning end point of a semiconductor process chamber, which have high anti-interference capability.
In order to solve the above-mentioned problems, according to an embodiment of the present application, there is provided a cleaning endpoint determination method for a semiconductor process chamber, comprising the steps of,
Acquiring optical parameters of characteristic gas generated in the cleaning process, and performing data processing on the optical parameters to obtain normalized absorption rate A;
acquiring an electrical parameter V of characteristic gas generated in the cleaning process;
data processing is carried out on the optical parameter and the electrical parameter V to obtain an optical endpoint index Optical weightElectrical end point indexElectrical weighting;
For the optical endpoint indexThe optical weightThe electrical end point indexThe electrical weightPerforming data processing to obtain a decision index S;
setting a first threshold value of the normalized absorption rate A And a second threshold value of the decision index S;
When the decision index S is continuously lower than the second thresholdAnd (2) andAnd judging that the cleaning is finished, wherein M is a constant, and the value range is 0.5-3.
According to an embodiment of the present application, the acquiring the optical parameter of the characteristic gas generated in the cleaning process, and performing data processing on the optical parameter to obtain the normalized absorption rate a, includes,
Wherein, the The absorption intensity of the characteristic gas generated in the cleaning process; for generating a reference light intensity of an optical system for detecting the characteristic gas during the cleaning process.
According to an embodiment of the present application, the data processing is performed on the optical parameter and the electrical parameter V to obtain an optical endpoint indexOptical weightElectrical end point indexElectrical weightingComprising the steps of, in combination,
Performing data processing on the optical parameters to obtain an optical signal quality factor Q;
Performing data processing on the optical signal quality factor Q to obtain optical weight ;
According to the optical weightObtaining the electrical weight。
According to an embodiment of the present application, the data processing is performed on the optical parameter to obtain an optical signal quality factor Q, including,
Acquiring reference light intensity of optical system for generating detection characteristic gas in cleaning process;
Calculating the reference light intensityIs set to be equal to the standard deviation S of (c),
Wherein, the For the reference light intensity at the ith sampling instantN is the number of sampling points in a 30 second window, and when the sampling frequency is 10Hz, n=300; for a reference light intensity within a 30 second window An arithmetic mean of (a);
performing data processing on the standard deviation S to obtain an optical signal quality factor Q,
Wherein k is a constant and takes a value of 0.5-2.
According to an embodiment of the present application, the data processing is performed on the optical signal quality factor Q to obtain an optical weightComprising the steps of, in combination,
;
Said weighting according to said opticsObtaining the electrical weightComprising the steps of, in combination,
=1-。
According to an embodiment of the present application, the data processing is performed on the optical parameter and the electrical parameter V to obtain an optical endpoint indexOptical weightElectrical end point indexElectrical weightingAlso comprises the following components, wherein,
Data processing is carried out on the optical parameters to obtain an optical endpoint index;
Data processing is carried out on the electrical parameter V to obtain an electrical endpoint index;
。
According to an embodiment of the application, the pair of optical end point indicesThe optical weightThe electrical end point indexThe electrical weightData processing is performed to obtain decision index S, including,
Wherein, the Is an index of optical endpoint in a cleaning cycleIs the maximum value of (2); Is an electrical endpoint index during a cleaning cycle Is a maximum value of (a).
According to an embodiment of the application, the first threshold value of the normalized absorption rate A is setAnd a second threshold value of the decision index SComprising the steps of, in combination,
The first threshold valueIn order to achieve this, the first and second,
Wherein, the Is thatThe value of normalized absorption rate a corresponding to the moment.
According to an embodiment of the application, the first threshold value of the normalized absorption rate A is setAnd a second threshold value of the decision index SAlso comprises the following components, wherein,
The second threshold valueIn order to achieve this, the first and second,
Wherein, the Is the real-time maximum of the absolute value of the first derivative of the normalized absorption rate a during the wash cycle.
The cleaning end point judging system for cleaning the semiconductor process chamber is used for implementing the cleaning end point judging method, and comprises a semiconductor chamber, an exhaust gas discharge pipeline and a detection device;
The exhaust gas discharge pipeline is communicated with the semiconductor cavity to discharge products and byproducts in the semiconductor cavity;
the detection device is arranged on the tail gas discharge pipeline to detect the concentration of the characteristic gas in real time.
By adopting the technical scheme, the optical parameters and the electrical parameters are collected, and the optical endpoint index is calculated according to the optical parameters and the electrical parametersOptical weightElectrical end point indexElectrical weightingAccording to the optical end point indexOptical weightElectrical end point indexElectrical weightingAnd calculating a decision index S, and judging whether the cleaning end point is reached or not according to the decision index S and the normalized absorption rate A. The method has the advantages that whether cleaning is finished is judged under the condition of a plurality of indexes through the cooperation of optics and electricity, the probability of misjudgment is reduced, namely, optical parameters and plasma electrical parameters are collected and fused in real time, so that a decision model is constructed, signal interference is resisted, and meanwhile reliability of end point judgment is improved.
Drawings
FIG. 1 is a step diagram of a cleaning endpoint determination method according to an embodiment of the present invention;
FIG. 2 is a schematic diagram showing signal comparison in an interference scenario, wherein the abscissa is the reaction time, the ordinate is the concentration of the characteristic gas, and the unit is ppm;
FIG. 3 is a graph showing the concentration change rate of a characteristic gas in ppm/s on the abscissa and s on the ordinate, and a graph showing the reaction time in s on the abscissa, according to an embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.
The following describes embodiments of the present invention in further detail with reference to FIGS. 1-3.
The embodiment of the invention provides a cleaning endpoint judging method for cleaning a semiconductor process chamber, in particular to a conventional cleaning endpoint detecting method which is mostly dependent on a single signal source, such as an Optical Emission Spectrum (OES) or an infrared absorption spectrum (IR), in the cleaning process of the semiconductor process chamber, and has obvious limitations, namely poor anti-interference capability, insufficient reliability and weak adaptability. For example, optical signals are susceptible to specular contamination or particulate scattering interference, while fixed threshold decision logic is not adaptable to process fluctuations. And the fixed threshold value of the cleaning agent is judged to be incapable of processing the change of different cleaning stages, so that the risk of over-cleaning or insufficient cleaning is increased. There is thus provided a cleaning endpoint determination method for cleaning a semiconductor process chamber, in particular, a cleaning endpoint determination method comprising the steps of,
S1, acquiring optical parameters of characteristic gas generated in a cleaning process, and performing data processing on the optical parameters to obtain a normalized absorption rate A;
s2, acquiring an electrical parameter V of characteristic gas generated in the cleaning process;
s3, performing data processing on the optical parameter and the electrical parameter V to obtain an optical endpoint index Optical weightElectrical end point indexElectrical weighting;
S4, optical end point indexOptical weightElectrical end point indexElectrical weightingPerforming data processing to obtain a decision index S;
S5, setting a first threshold value of the normalized absorption rate A And a second threshold value of the decision index S;
S6, when the decision index S is continuously lower than the second thresholdAnd (2) andAnd judging that the cleaning is finished, wherein M is a constant, and the value range is 0.5-3.
In some embodiments, the cleaning gas selected may be different depending on the deposited film in the process chamber, for example, when the deposited film isOr (b)In the case of a cleaning gas, the cleaning gas may beWhen the deposited film isOr (b)In the case of a cleaning gas, the cleaning gas may beSpecifically, the method is not limited to the method, and the deposited film isThe cleaning gas isBy way of example, where the reaction of the two yields the following product,
Wherein the main characteristic gas isI.e., in the resulting product,Is the highest in concentration and is most easily detected, and therefore usesAs a characteristic gas.
In some embodiments, it is desirable to monitor the normalized absorbance A of the optical parameter and the electrical parameter V of the feature gas, where both the normalized absorbance A and the electrical parameter V may indicate whether the cleaning process within the semiconductor process chamber is complete, i.e., within the semiconductor process chamberWhether the reaction is complete. More specifically, normalized absorbance A can reflect a real-time image of the concentration of a feature gas, i.e., by normalizing absorbance A, it can be determined within a semiconductor process chamberAnd the electrical parameter V can reflect the energy state of the plasma, namely judging the density of fluorine atoms participating in the reaction, and indicating the trend of stopping the reaction when the density of fluorine atoms is reduced, so that the cleaning process in the semiconductor process chamber can be judged whether the reaction is finished or not by matching the normalized absorption rate A with the electrical parameter V.
In some embodiments, after obtaining the normalized absorption rate a and the electrical parameter V, calculation is performed according to the normalized absorption rate a and the electrical parameter V to obtain the optical endpoint indexOptical weightElectrical end point indexElectrical weighting. Specifically, although the normalized absorption rate a and the electrical parameter V can be used for the judgment, since the roughness, dimension and noise of the curve formed by the normalized absorption rate a and the electrical parameter V are different, errors occur in the judgment process to cause inaccurate judgment result, and therefore, the judgment result needs to be changed into a standard with the same dimension and comparable index and weight, namely, an optical endpoint indexOptical weightElectrical end point indexElectrical weightingWherein, the optical endpoint indexCan judge the concentration change rate of the characteristic gas in the semiconductor process chamber and the electrical endpoint indexThe falling speed of the plasma energy in the semiconductor process chamber, namely the change speed of the plasma space potential, can be judged. While the optical weightAnd electrical weightErroneous judgment can be prevented.
In some embodiments, the optical endpoint indicator is obtainedOptical weightElectrical end point indexElectrical weightingThen, an optical endpoint index is also requiredOptical weightElectrical end point indexElectrical weightingData processing is carried out to obtain decision index S, and concretely, the decision index S is based on the optical end point indexCan judge the characteristic gas concentration change in the reaction process according to the optical weightCan quantify the optical endpoint indexAccording to the reliability of the electric end point indexThe change rate of the plasma space potential in the reaction process can be judged according to the electrical weightCapable of electrical end point indexWhen judging the end point of the cleaning, only has two states of cleaning completion and cleaning incompletion, so the index needs to be formed into an index capable of deciding whether the cleaning is completed or not, namely an optical end point indexOptical weightElectrical end point indexElectrical weightingAnd (5) performing data processing to obtain a decision index S.
In some embodiments, after obtaining the decision index S, a first threshold value of the normalized absorption rate a is further setAnd a second threshold value of the decision index SWhen the decision index S is continuously lower than the second thresholdAnd (2) andWhen this is the case, it is judged that the cleaning is completed. Wherein the first threshold valueAs a limiting indicator of the normalized absorption rate a,Can ensure that the reactant consumption is more than 80 percent in the cleaning process, and a second threshold valueAs the limiting index of the decision index S, the decision index S and the limiting index cooperate to realize the situation that excessive cleaning cannot occur when the cleaning end point is judged.
In some embodiments, the optical parameters of the feature gas generated during the cleaning process are obtained, and the optical parameters are data processed to obtain normalized absorption rate a, including,
Wherein, the The absorption intensity of the characteristic gas generated in the cleaning process; for generating a reference light intensity of an optical system for detecting the characteristic gas during the cleaning process. Specifically, the absorption intensity of the characteristic gas generated in the cleaning process is determined Can judge the participation of the reaction in the cleaning processTo determine the progress of cleaning, and generating a reference light intensity of an optical system for detecting the characteristic gas during cleaningCan not be covered byAbsorption, but affected by window contamination or particle scattering during the reaction, thus referencing the intensity of lightAs a real-time reference, is matched with the absorption intensity of the characteristic gasAnd calculating the normalized absorption rate A, so that the normalized absorption rate A is not influenced by window pollution or particle scattering, and the accuracy is improved.
In some embodiments, the optical and electrical parameters V are data processed to obtain an optical endpoint indicatorOptical weightElectrical end point indexElectrical weightingComprising the steps of, in combination,
Performing data processing on the optical parameters to obtain an optical signal quality factor Q;
data processing is carried out on the optical signal quality factor Q to obtain optical weight ;
According to optical weightsObtaining electrical weight。
In some embodiments, the optical parameters are data processed to obtain an optical signal quality factor Q, including,
Acquiring reference light intensity of optical system for generating detection characteristic gas in cleaning process;
Calculating the reference light intensityIs set to be equal to the standard deviation S of (c),
Wherein, the For the reference light intensity at the ith sampling instantN is the number of sampling points in a 30 second window, and when the sampling frequency is 10Hz, n=300; for a reference light intensity within a 30 second window Specifically, during the calculation, setting the sampling frequency to 1-10Hz, preferably 10Hz, and detecting the reference light intensity within 30s, namely the latest 30sFor example, the sampling frequency is 10Hz, 300 sampling points are arranged in a window of 30s, the standard deviation of the 300 sampling points is calculated, and the quality factor Q of the optical signal is calculated to judge the quality of the optical signal, specifically, the reference light intensityCan be used as a quantitative index of the interference level, i.e. the reference light intensityThe smaller the value of the standard deviation S, the more representative of the reference light intensityThe more stable the reference light intensityThe larger the value of the standard deviation S, the more the reference light intensity is representedThe more severe the fluctuation.
Data processing is carried out on the standard deviation S to obtain an optical signal quality factor Q,
Wherein k is a constant and takes a value of 0.5-2. Specifically, the optical signal quality factor Q is calculated in an exponential form, so that the optical signal quality factor Q has a nonlinear sensitive characteristic and an automatic saturation characteristic, wherein the nonlinear sensitive characteristic means that small fluctuation has small influence on the optical signal quality factor Q, and large fluctuation can lead to rapid reduction of the optical signal quality factor Q, so that stability of the optical signal quality factor Q is improved, and small fluctuation of an end point judgment result cannot be influenced by filtering. Auto-saturation refers to an optical signal quality factor Q role in the range of 0-1, no matter how large the range of standard deviation S is. More specifically, in this embodiment, k has a value of 1, and is suitable for a process with higher purity when k is greater than 1, for example, k is 2, and is suitable for a reaction environment with more impurities when k is less than 1, for example, k is 0.5.
In some embodiments, the threshold value of the optical signal quality factor Q is 0-1, which when approaching 1, represents good optical signal quality and reliable signal, and when approaching 0, represents poor optical signal quality and unreliable signal.
In some embodiments, the optical signal quality factor Q is data processed to obtain an optical weightComprising the steps of, in combination,
;
I.e. mapping an optical signal quality factor Q with a threshold value of 0-1 to an optical weightThe threshold value of the optical weight is set to 0-1, so that the reliability degree of the optical signal quality factor Q is judged.
According to optical weightsObtaining electrical weightComprising the steps of, in combination,
=1-
Wherein the optical weightAnd electrical weightThe sum is 1, thus the electrical weight=1-。
In some embodiments, the optical and electrical parameters V are data processed to obtain an optical endpoint indicatorOptical weightElectrical end point indexElectrical weightingAlso comprises the following components, wherein,
Data processing is carried out on the optical parameters to obtain an optical endpoint index;
Data processing is carried out on the electrical parameter V to obtain an electrical endpoint index;
。
Wherein, when the optical end point index is0, RepresentingThe concentration of (2) rises and the reaction is intense when the optical endpoint index is reached<0, Representative ofIs decreased, the reaction is terminated soon. Electrical endpoint index0, Indicating that the reaction is about to end, i.e. the electrical end point index<0, Representing that the reaction is still in progress.
In some specific embodiments, the electrical parameter V is the plasma space potential, which is detected by a langmuir probe at a detection frequency of 0.1s.
In some embodiments, the optical endpoint indexOptical weightElectrical end point indexElectrical weightingData processing is performed to obtain decision index S, including,
Wherein, the Is an index of optical endpoint in a cleaning cycleIs the maximum value of (2); Is an electrical endpoint index during a cleaning cycle Is a maximum value of (a). In particular, the method comprises the steps of,It is understood that the moment of maximum jitter in the cleaning cycle is taken as the maximum point, i.eAt this timeIs an index of optical endpoint in a cleaning cycleRelative to the optical endpoint index during the cleaning cycleIs equal to the ratio of the maximum values of (2). I.e. optical endpoint indexReliability and electrical end point index of (2)The reliability of (1) is limited to a range of (-1) -1. Therefore, the decision index S can be obtained by calculating a plurality of parameters, and then the decision index S is judged according to the decision index, so that whether the cleaning process reaches the cleaning end point is determined.
In some embodiments, a first threshold value of normalized absorption rate A is setAnd a second threshold value of the decision index SComprising the steps of, in combination,
First threshold valueIn order to achieve this, the first and second,
Wherein, the Is thatThe value of normalized absorption rate a corresponding to the moment. Specifically, a first threshold valueIn practice, the real-time maximum value of the normalized absorption rate A in the cleaning period, that is to say in the semiconductor process chamberAt maximum concentration due toWherein, the value range of M is 0.5-3, wherein, taking M as an example, in the judging process,The maximum concentration value is reduced by eighty percent and then is used as the basis for judging the cleaning end point, namely。
In some embodiments, a first threshold value of normalized absorption rate A is setAnd a second threshold value of the decision index SAlso comprises the following components, wherein,
Second threshold valueIn order to achieve this, the first and second,
Wherein, the Is the real-time maximum of the absolute value of the first derivative of the normalized absorption rate a during the wash cycle. Specifically, the second threshold valueThe cleaning reaction is considered to be finished when the real-time maximum value of the absolute value of the first derivative of the normalized absorption rate A in the cleaning period is-10%, namely, the decision index S is smaller than-10% of the real-time maximum value of the absolute value of the first derivative of the normalized absorption rate ADE in the judging process. I.e. simultaneously satisfying that the decision criterion S is continuously below the second thresholdAnd (2) andWhen this is the case, it is judged that the cleaning is completed.
The embodiment of the invention also discloses a cleaning end point judging system for cleaning the semiconductor process chamber, which is used for implementing the cleaning end point judging method, wherein the cleaning end point judging system comprises a semiconductor chamber, a tail gas emission pipeline and a detection device;
the tail gas exhaust pipeline is communicated with the semiconductor cavity to exhaust products and byproducts in the semiconductor cavity;
The detection device is arranged on the tail gas discharge pipeline to detect the concentration of the characteristic gas in real time.
In some embodiments, the semiconductor process chamber is used for placing a wafer, the wafer reacts in the semiconductor process chamber, the exhaust gas discharge pipeline is arranged at the bottom of the semiconductor process chamber and is communicated with the interior of the semiconductor process chamber, and therefore, the processing products and byproducts generated during the wafer processing of the exhaust gas discharge pipeline can be kept in a state that the wafer cannot influence the process production process, and in particular, the exhaust gas discharge pipeline can be arranged in a bonding, clamping or integrated forming mode, and the like, and is not limited herein, so that the exhaust gas discharge pipeline can be fixed on the semiconductor process chamber and is communicated with the interior of the semiconductor process chamber to discharge the processing products and byproducts.
In some specific embodiments, the detection device is disposed inside the exhaust gas emission pipeline, and the setting manner of the detection device may be bonding, clamping or bolting, and the like, which is not limited herein, so as to detect the characteristic gas of the exhaust gas emission pipeline.
The application relates to a method and a system for judging a cleaning end point of a semiconductor process chamber, which are implemented by collecting optical parameters and electrical parameters and calculating to obtain an optical end point index according to the optical parameters and the electrical parametersOptical weightElectrical end point indexElectrical weightingAccording to the optical end point indexOptical weightElectrical end point indexElectrical weightingAnd calculating a decision index S, and judging whether the cleaning end point is reached or not according to the decision index S and the normalized absorption rate A. The method has the advantages that whether cleaning is finished is judged under the condition of a plurality of indexes through the cooperation of optics and electricity, the probability of misjudgment is reduced, namely, optical parameters and plasma electrical parameters are collected and fused in real time, so that a decision model is constructed, signal interference is resisted, and meanwhile reliability of end point judgment is improved.
While embodiments of the present invention have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention described herein is capable of other embodiments and of being practiced or of being carried out in various ways.
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