CN1237400C - 感光树脂组合物 - Google Patents
感光树脂组合物 Download PDFInfo
- Publication number
- CN1237400C CN1237400C CNB028032098A CN02803209A CN1237400C CN 1237400 C CN1237400 C CN 1237400C CN B028032098 A CNB028032098 A CN B028032098A CN 02803209 A CN02803209 A CN 02803209A CN 1237400 C CN1237400 C CN 1237400C
- Authority
- CN
- China
- Prior art keywords
- resin composition
- photosensitive resin
- film
- composition according
- alkali
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
| 膜剩余率(%) | 耐热性 | 透光度 | 极限分辨率 | 耐溶剂性() | |
| 实施例1 | 82.0 | ○ | ○ | 4 | - |
| 实施例2 | 81.0 | ○ | ○ | 4 | - |
| 实施例3 | 99.0 | ○ | ○ | 4 | 3000 |
| 实施例4 | 99.0 | ○ | ○ | 4 | 300 |
| 比较例1 | 71.1 | ○ | ○ | 6 | - |
| 比较例2 | 95.0 | × | × | 8 | - |
| 比较例3 | 99.0 | ○ | ○ | 6 | - |
Claims (7)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP295662/2001 | 2001-09-27 | ||
| JP2001295662 | 2001-09-27 | ||
| JP2001389601 | 2001-12-21 | ||
| JP389601/2001 | 2001-12-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1554037A CN1554037A (zh) | 2004-12-08 |
| CN1237400C true CN1237400C (zh) | 2006-01-18 |
Family
ID=26623033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028032098A Expired - Fee Related CN1237400C (zh) | 2001-09-27 | 2002-09-24 | 感光树脂组合物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20040043322A1 (zh) |
| EP (1) | EP1434090A1 (zh) |
| JP (1) | JP3848653B2 (zh) |
| KR (1) | KR100869040B1 (zh) |
| CN (1) | CN1237400C (zh) |
| TW (1) | TW574615B (zh) |
| WO (1) | WO2003029898A1 (zh) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4099114B2 (ja) | 2003-06-26 | 2008-06-11 | Azエレクトロニックマテリアルズ株式会社 | 感光性樹脂組成物 |
| CN100535747C (zh) * | 2003-07-16 | 2009-09-02 | Az电子材料(日本)株式会社 | 光敏树脂组合物 |
| TWI424270B (zh) * | 2004-05-26 | 2014-01-21 | 日產化學工業股份有限公司 | 正型感光性樹脂組成物及所得層間絕緣膜以及微透鏡 |
| JP4736836B2 (ja) * | 2005-02-17 | 2011-07-27 | 住友化学株式会社 | フォトスペーサ形成用感光性樹脂組成物 |
| TWI406062B (zh) * | 2005-07-29 | 2013-08-21 | Sumitomo Chemical Co | A photosensitive resin composition for optical spacers, an optical spacers, and a liquid crystal display device |
| JP2007052359A (ja) * | 2005-08-19 | 2007-03-01 | Jsr Corp | パターン形成方法、その硬化物および回路基板 |
| US8197934B2 (en) * | 2006-04-13 | 2012-06-12 | Kolon Industries, Inc. | Composition for positive type photoresist and positive type photoresist film manufactured thereby |
| JP5298428B2 (ja) * | 2006-12-26 | 2013-09-25 | Jnc株式会社 | 熱硬化性樹脂組成物及び硬化膜 |
| JP5338352B2 (ja) * | 2009-02-09 | 2013-11-13 | 日油株式会社 | ポジ型感光性樹脂組成物 |
| JP5526693B2 (ja) * | 2009-10-09 | 2014-06-18 | 日油株式会社 | 感光性樹脂組成物およびその用途 |
| JP5673963B2 (ja) * | 2010-01-26 | 2015-02-18 | 日産化学工業株式会社 | ポジ型レジスト組成物及びマイクロレンズの製造方法 |
| JP5885269B2 (ja) * | 2011-06-20 | 2016-03-15 | 日本化薬株式会社 | ネガ型感光性樹脂組成物及びその硬化物 |
| JP2013130816A (ja) * | 2011-12-22 | 2013-07-04 | Nippon Zeon Co Ltd | 永久膜用樹脂組成物及び電子部品 |
| JP6065750B2 (ja) * | 2013-05-29 | 2017-01-25 | 住友ベークライト株式会社 | 感光性樹脂組成物および電子装置 |
| TW201525064A (zh) * | 2013-12-16 | 2015-07-01 | Daxin Materials Corp | 感光樹脂組成物、感光樹脂及有機發光二極體顯示元件 |
| CN107430337A (zh) * | 2015-03-30 | 2017-12-01 | 三菱瓦斯化学株式会社 | 辐射敏感组合物及抗蚀图案形成方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2585070B2 (ja) * | 1988-08-02 | 1997-02-26 | 日本ペイント株式会社 | 画像形成方法 |
| JP2927013B2 (ja) * | 1990-02-20 | 1999-07-28 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
| KR0184870B1 (ko) * | 1990-02-20 | 1999-04-01 | 아사구라 다기오 | 감방사선성 수지 조성물 |
| JP3241399B2 (ja) * | 1991-05-30 | 2001-12-25 | ジェイエスアール株式会社 | マイクロレンズ用感放射線性樹脂組成物 |
| US5362597A (en) * | 1991-05-30 | 1994-11-08 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive resin composition comprising an epoxy-containing alkali-soluble resin and a naphthoquinone diazide sulfonic acid ester |
| JPH0695386A (ja) * | 1992-09-11 | 1994-04-08 | Tosoh Corp | マイクロレンズ用ポジ型感光材料 |
| JP2000194130A (ja) * | 1998-12-25 | 2000-07-14 | Clariant (Japan) Kk | 感光性樹脂組成物 |
| JP2002072473A (ja) * | 2000-08-25 | 2002-03-12 | Clariant (Japan) Kk | 感光性樹脂組成物 |
-
2002
- 2002-09-24 CN CNB028032098A patent/CN1237400C/zh not_active Expired - Fee Related
- 2002-09-24 US US10/432,462 patent/US20040043322A1/en not_active Abandoned
- 2002-09-24 JP JP2003533050A patent/JP3848653B2/ja not_active Expired - Fee Related
- 2002-09-24 WO PCT/JP2002/009745 patent/WO2003029898A1/ja not_active Ceased
- 2002-09-24 EP EP02772888A patent/EP1434090A1/en not_active Withdrawn
- 2002-09-24 KR KR1020037008022A patent/KR100869040B1/ko not_active Expired - Fee Related
- 2002-09-26 TW TW091122115A patent/TW574615B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW574615B (en) | 2004-02-01 |
| CN1554037A (zh) | 2004-12-08 |
| WO2003029898A1 (en) | 2003-04-10 |
| KR20040047735A (ko) | 2004-06-05 |
| US20040043322A1 (en) | 2004-03-04 |
| JPWO2003029898A1 (ja) | 2005-01-20 |
| JP3848653B2 (ja) | 2006-11-22 |
| EP1434090A1 (en) | 2004-06-30 |
| KR100869040B1 (ko) | 2008-11-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: AZ ELECTRON MATERIAL ( JAPAN )) CO., LTD. Free format text: FORMER OWNER: CLARIANT INTERNATIONAL LTD. Effective date: 20050318 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20050318 Address after: Tokyo, Japan, Japan Applicant after: AZ electronic materials (Japan) Co., Ltd. Address before: Mu Tengci, Switzerland Applicant before: Clariant International Ltd. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Free format text: FORMER OWNER: AZ ELECTRONIC MATERIAL (JAPAN) CO., LTD. Effective date: 20120522 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20120522 Address after: Tokyo, Japan, Japan Patentee after: AZ Electronic Materials (Japan) K. K. Address before: Tokyo, Japan, Japan Patentee before: AZ electronic materials (Japan) Co., Ltd. |
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| ASS | Succession or assignment of patent right |
Owner name: MERCK PATENT GMBH Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Effective date: 20150407 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150407 Address after: Darmstadt Patentee after: Merck Patent GmbH Address before: Tokyo, Japan, Japan Patentee before: AZ Electronic Materials (Japan) K. K. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060118 Termination date: 20170924 |
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| CF01 | Termination of patent right due to non-payment of annual fee |