CN1299336C - Wafer Back Grinding Process - Google Patents
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Abstract
Description
技术领域technical field
本发明属于半导体工艺,特别是一种晶圆背面研磨工艺。The invention belongs to semiconductor technology, in particular to a wafer back grinding technology.
背景技术Background technique
随着半导体封装组件的薄化趋势,封装组件内的晶片亦需要符合更薄的厚度。故提出晶圆背面研磨工艺。习知的晶圆背面研磨工艺是实施于积体电路制作工艺之后及晶圆切割工艺之前,以使得晶圆上多个晶片能一次完成薄化处理。With the thinning trend of semiconductor package components, the chips in the package components also need to comply with thinner thickness. Therefore, a wafer backside grinding process is proposed. The conventional wafer back grinding process is implemented after the integrated circuit manufacturing process and before the wafer dicing process, so that multiple chips on the wafer can be thinned at one time.
如图1、图2所示,传统的晶圆背面研磨工艺与晶圆切割工艺包括如下步骤:As shown in Figure 1 and Figure 2, the traditional wafer back grinding process and wafer cutting process include the following steps:
步骤一step one
提供晶圆Provide wafer
提供具有形成积体电路主动面21及对应背面22的晶圆20,通常在晶圆20主动面21贴附保护胶带23。A wafer 20 having an active surface 21 for forming an integrated circuit and a corresponding back surface 22 is provided, and a protective tape 23 is usually pasted on the active surface 21 of the wafer 20 .
步骤二step two
装载晶圆Load wafer
采用真空吸附方式,以晶圆主动面21朝向研磨盘(grinding chuck)31的方式将晶圆20吸附固定于研磨盘31上,以将晶圆20装载于传统的晶圆背面研磨设备上,此时,晶圆20的背面22显露。Vacuum adsorption is adopted, and the wafer 20 is adsorbed and fixed on the grinding chuck 31 with the wafer active surface 21 facing the grinding chuck 31, so that the wafer 20 is loaded on the traditional wafer backside grinding equipment. , the backside 22 of the wafer 20 is exposed.
步骤三step three
研磨晶圆Grinding wafer
以研磨头32研磨晶圆20的背面22,以形成更薄的研磨后的背面221。The backside 22 of the wafer 20 is ground by the grinding head 32 to form a thinner ground backside 221 .
步骤四step four
卸下晶圆unload wafer
以吸附装置接触晶圆20研磨后的背面221,将晶圆20由研磨设备取出。The polished backside 221 of the wafer 20 is contacted by the suction device, and the wafer 20 is taken out from the grinding equipment.
步骤五step five
去除胶带remove tape
将取出的晶圆20搬移至胶带去除载台,以去除保护胶带23。The taken-out wafer 20 is transferred to a tape removal stage to remove the protective tape 23 .
步骤六step six
切割晶圆前定位Positioning before dicing wafers
在晶圆20背面221黏贴另一定位胶带。Paste another positioning tape on the back side 221 of the wafer 20 .
步骤七step seven
切割晶圆Dicing wafer
将晶圆20搬移至晶圆切割设备,对晶圆20进行切割。The wafer 20 is moved to the wafer dicing equipment, and the wafer 20 is diced.
如上所述,自卸下晶圆的步骤四至切割晶圆的步骤七之间需要多道搬动动作,进行机台的转换。由于习知小尺寸,如4in或6in晶圆背面研磨后晶圆的翘曲度(wafer war page)仍不明显,尤在可被接受的范围,但随着晶圆尺寸的加大,如6in以上,或研磨的厚度更严格要求,如12密尔以下时,如图2所示,研磨后晶圆20的翘曲相当明显,此一翘曲的发生更因晶圆积体电路工艺残留应力及如矽等半导体基层的薄化变得格外严重,以至于在卸下晶圆的步骤四或后续的搬运步骤中均极易导致晶圆20的碎裂。As mentioned above, between step 4 of unloading the wafer and step 7 of dicing the wafer, multiple moving actions are required for machine conversion. Due to the known small size, such as 4in or 6in wafers, the wafer warpage (wafer war page) after back grinding is still not obvious, especially in an acceptable range, but as the wafer size increases, such as 6in Above, or the thickness of the grinding is more stringent, such as below 12 mils, as shown in Figure 2, the warping of the wafer 20 after grinding is quite obvious, and the occurrence of this warping is more due to the residual stress of the wafer integrated circuit process. And the thinning of the semiconductor base layer such as silicon becomes so serious that the chipping of the wafer 20 is very likely to be caused in the fourth step of unloading the wafer or in the subsequent handling steps.
已公开的晶圆切割工艺是在研磨前预先切割晶圆,晶圆的背面是黏贴第一贴带,切割晶圆后于其主动面黏贴第二贴带并去除第一贴带,进行研磨后晶圆即形成多个晶片,再于多个晶片磨薄后背面黏贴第三贴带并去除第二贴带,因此,翻转与搬运的次数相当频繁,晶圆的定位校正需要严格要求,此外,当需要过度研磨时,在第二贴带已分离的晶片可能因黏附力不足而在研磨时产生位移偏差或碰撞损毁。The disclosed wafer dicing process is to pre-cut the wafer before grinding. The back of the wafer is pasted with the first tape. After the wafer is cut, the second tape is pasted on the active surface and the first tape is removed. After grinding, the wafer is formed into multiple wafers, and then the third tape is pasted on the back of multiple wafers after thinning and the second tape is removed. Therefore, the number of flipping and handling is quite frequent, and the alignment of wafers requires strict requirements. , In addition, when excessive grinding is required, the wafers that have been separated in the second tape may have displacement deviation or collision damage during grinding due to insufficient adhesion.
发明内容Contents of the invention
本发明的目的是提供一种工艺整合、减少搬运动作、防止晶圆翘曲碎裂、定位确实的晶圆背面研磨工艺。The object of the present invention is to provide a wafer back grinding process which integrates the process, reduces the handling action, prevents the warping and cracking of the wafer, and ensures accurate positioning.
本发明包括提供具有主动面及背面晶圆的提供晶圆步骤、以吸附固定方式将晶圆装载于研磨盘上并使晶圆背面显露出的装载晶圆步骤、在研磨盘上对晶片背面进行研磨的研磨晶圆步骤、在晶圆研磨后的背面贴附定位件的定位件贴附步骤及借由去除研磨盘吸附力使晶圆脱离研磨盘的卸下晶圆步骤;研磨晶圆步骤与定位件贴附的步骤中皆是将晶圆装载在研磨盘上,且在定位件贴附步骤中研磨盘保持对晶圆的吸附力;卸下晶圆步骤中是以定位件作为载具移动晶圆。The present invention includes the step of providing a wafer with an active surface and a wafer on the back side, loading the wafer on the grinding disc in a suction-fixed manner and exposing the back side of the wafer, and carrying out the wafer backside on the grinding disc. The step of grinding the wafer for grinding, the step of attaching the positioner for attaching the positioner on the backside of the wafer after grinding, and the step of unloading the wafer from the grinding disc by removing the adsorption force of the grinding disc; the step of grinding the wafer and In the step of attaching the positioning member, the wafer is loaded on the grinding disc, and the grinding disc maintains the adsorption force on the wafer during the attaching step of the positioning member; in the step of unloading the wafer, the positioning member is used as a carrier to move wafer.
其中:in:
提供晶圆步骤中于晶圆的主动面贴附有黏性保护胶带。In the step of providing the wafer, an adhesive protective tape is pasted on the active surface of the wafer.
提供晶圆步骤中晶圆的尺寸可为8in或12in。The size of the wafer in the wafer providing step can be 8in or 12in.
研磨晶圆步骤区分为粗研磨及细研磨。The wafer grinding step is divided into rough grinding and fine grinding.
研磨晶圆步骤中晶圆的厚度是研磨至12密尔以下。In the step of grinding the wafer, the thickness of the wafer is ground to less than 12 mils.
定位件贴附步骤的定位件包括定位环及定位胶带,定位环具有大于晶圆尺寸的开口;定位胶带是贴附于定位环并经由开口贴附于晶圆研磨后背面。The positioning piece in the positioning piece attachment step includes a positioning ring and a positioning tape. The positioning ring has an opening larger than the size of the wafer; the positioning tape is attached to the positioning ring and attached to the backside of the wafer after grinding through the opening.
定位件贴附步骤是先将定位件的定位环设置于研磨盘上,再以滚压方式将定位胶带同时贴附于定位环及晶圆研磨后的背面。The step of attaching the positioning member is to first place the positioning ring of the positioning member on the grinding disc, and then attach the positioning tape to the positioning ring and the backside of the wafer after grinding by rolling.
一种晶圆背面研磨工艺,它包括以吸附固定方式将晶圆装载于研磨盘上并使晶圆背面显露出的装载晶圆步骤、在研磨盘上对晶片背面进行研磨的研磨晶圆步骤及在晶圆研磨后的背面贴附定位件的定位件贴附步骤;研磨晶圆步骤与定位件贴附的步骤中皆是将晶圆装载在研磨盘上,且在定位件贴附步骤中研磨盘保持对晶圆的吸附力以使定位件平整贴附于晶圆研磨后背面。A wafer backside grinding process, which includes a step of loading a wafer on a grinding disc in a suction-fixed manner and exposing the back side of the wafer, a grinding step of grinding the back side of the wafer on the grinding disc, and The positioner attaching step of attaching the positioner on the backside of the wafer after grinding; in the step of grinding the wafer and the step of attaching the positioner, the wafer is loaded on the grinding disc, and ground in the step of attaching the positioner The disk maintains the suction force to the wafer so that the positioning part is flatly attached to the backside of the wafer after grinding.
定位件贴附步骤中定位件包括定位环及定位胶带,定位环具有大于晶圆尺寸的开口;定位胶带是贴附于定位环并经由开口贴附于晶圆研磨后背面,以使后续搬运过程中不需要接触晶圆研磨后背面。In the attaching step of the positioning member, the positioning member includes a positioning ring and a positioning tape. The positioning ring has an opening larger than the size of the wafer; the positioning tape is attached to the positioning ring and attached to the back of the wafer after grinding through the opening, so that the subsequent handling process There is no need to contact the backside of the wafer after grinding.
定位件贴附步骤中定位件为适用于晶圆切割工艺的定位件。In the attaching step of the positioning member, the positioning member is a positioning member suitable for a wafer cutting process.
由于本发明包括提供具有主动面及背面晶圆的提供晶圆步骤、以吸附固定方式将晶圆装载于研磨盘上并使晶圆背面显露出的装载晶圆步骤、在研磨盘上对晶片背面进行研磨的研磨晶圆步骤、在晶圆研磨后的背面贴附定位件的定位件贴附步骤及借由去除研磨盘吸附力使晶圆脱离研磨盘的卸下晶圆步骤;研磨晶圆步骤与定位件贴附的步骤中皆是将晶圆装载在研磨盘上,且在定位件贴附步骤中研磨盘保持对晶圆的吸附力;卸下晶圆步骤中是以定位件作为载具移动晶圆。在晶圆背研磨设备中,晶圆是被吸附于研磨盘上以同一研磨盘进行装载晶圆、研磨晶圆、定位件贴附、卸下晶圆等步骤,在研磨后,晶圆是贴附于定位件的定位胶带上,在卸下晶圆步骤及后续步骤的搬运动作中,可利用定位件作为晶圆的载具,而不需要接触晶圆研磨后的背面,从而具有工艺整合、减少搬运动作及防止研磨后晶圆翘而产生碎裂的功效,特别适用于大尺寸晶圆的超薄研磨。不仅工艺整合、减少搬运动作,而且防止晶圆翘曲碎裂、定位确实,从而达到本发明的目的。Because the present invention includes the step of providing the wafer with the active surface and the back wafer, loading the wafer on the grinding disc in a suction-fixed manner and exposing the wafer backside step, and aligning the wafer backside on the grinding disc. The step of grinding the wafer for grinding, the step of attaching the positioning member to the backside of the wafer after grinding, and the step of unloading the wafer from the grinding disc by removing the adsorption force of the grinding disc; the step of grinding the wafer In the step of attaching the positioning member, the wafer is loaded on the grinding disc, and the grinding disc maintains the adsorption force on the wafer in the step of attaching the positioning member; in the step of unloading the wafer, the positioning member is used as a carrier Move the wafer. In the wafer back grinding equipment, the wafer is adsorbed on the grinding disc, and the same grinding disc is used to carry out the steps of loading the wafer, grinding the wafer, attaching the positioning part, unloading the wafer, etc. After grinding, the wafer is attached Attached to the positioning tape attached to the positioning piece, the positioning piece can be used as a carrier for the wafer during the wafer unloading step and subsequent steps of handling without touching the backside of the wafer after grinding, so it has process integration, It has the effect of reducing the movement and preventing the wafer from warping and cracking after grinding, especially suitable for ultra-thin grinding of large-sized wafers. Not only the process is integrated and the handling action is reduced, but also the warping and fragmentation of the wafer is prevented and the positioning is accurate, so as to achieve the purpose of the present invention.
附图说明Description of drawings
图1、为传统晶圆背面研磨及切割工艺流程方框图。Figure 1 is a block diagram of the traditional wafer back grinding and dicing process.
图2、为传统晶圆背面研磨工艺示意图。Figure 2 is a schematic diagram of a traditional wafer back grinding process.
图3、为本发明流程方框图。Fig. 3 is a flow block diagram of the present invention.
图4、为本发明步骤一示意图。Fig. 4 is a schematic diagram of
图5、为本发明步骤二示意图。Fig. 5 is a schematic diagram of Step 2 of the present invention.
图6、为本发明步骤三示意图。Fig. 6 is a schematic diagram of Step 3 of the present invention.
图7、为本发明步骤四示意图。Fig. 7 is a schematic diagram of Step 4 of the present invention.
图8、为本发明步骤五示意图。Fig. 8 is a schematic diagram of Step 5 of the present invention.
图9、为本发明步骤六示意图。Fig. 9 is a schematic diagram of Step 6 of the present invention.
图10、为本发明步骤七示意图。Fig. 10 is a schematic diagram of Step 7 of the present invention.
图11、为本发明流程示意图。Fig. 11 is a schematic flow chart of the present invention.
图12、为本发明使用设备示意图。Fig. 12 is a schematic diagram of the equipment used in the present invention.
具体实施方式Detailed ways
如图3、图11、图12所示,本发明包括如下步骤:As shown in Fig. 3, Fig. 11, Fig. 12, the present invention comprises the following steps:
步骤一step one
提供晶圆Provide wafer
如图4所示,准备具有主动面51及对应背面52的晶圆50,主动面51上已完成积体电路制作,如微处理器、微控制器、记忆体或特殊应用的积体电路。较佳地,晶圆50为高频记忆体,如DDR、Rambus、TDR或QDR等随机存取记忆体。晶圆的尺寸可为4in、5in、6in、8in或12in,较佳地,晶圆为8in或12in;较佳地在晶圆50的主动面51贴附有可撕离的黏性保护胶带53。As shown in FIG. 4 , a
步骤二step two
装载晶圆Load wafer
如图5所示,以真空吸附或静电吸附等吸附固定方式将晶圆50装载(loading)于晶圆背面研磨设备90的研磨盘(grinding chuck)61上,并使得晶圆50的背面52显露。As shown in FIG. 5 , the
步骤三step three
研磨晶圆Grinding wafer
如图11、图12所示,研磨盘61是在晶圆背面研磨设备90的装载工作站91利用装载臂911的移动,将晶圆50载放至研磨盘61上,之后,研磨盘61是沿轴心旋动至研磨工作站92对晶圆50进行研磨。As shown in Figures 11 and 12, the grinding
研磨晶圆区分为于粗研磨工作站92执行的粗研磨作业及于细研磨工作站93执行的细研磨作业;如图6所示,在研磨盘61移动定位于粗研磨工作站92或细研磨工作站93之后,,如图6所示,以适当的研磨头62研磨晶圆50的背面52,以形成研磨后背面521,依厚度要求不同,研磨后晶圆50的厚度可达12密尔(mil)以下,由于本发明工艺可不需要考虑晶圆50的翘曲度,研磨后晶圆50的厚度甚至可达6密尔、4密尔或更低。The grinding wafer area is divided into the rough grinding operation performed at the rough grinding
步骤四step four
定位件贴附Positioner attachment
研磨盘61旋动至定位件贴附工作站94;较佳地是先以去离子水清洁晶圆50,其可在定位件贴附工作站94设置晶圆清洁装置而在定位件贴附工作站94执行;亦可以额外工作站处理。Grinding
如图11、图12所示,研磨盘61旋动至定位件贴附工作站94。如图7所示,在研磨盘61上将定位件70贴附于晶圆50研磨后背面521,在贴附过程中,研磨盘61仍保持对晶圆50的吸附力,使得晶圆50水平地设置于研磨盘61上,以利于定位件70平整贴附于晶圆50研磨后背面521。定位件70包括定位环71及定位胶带73,定位环71具有大于晶圆50尺寸的开口72,一般而言,定位环71为硬质金属环;定位胶带73是贴附于定位环71并经由开口72贴附于晶圆50研磨后背面521;较佳地定位件70适用于晶圆切割工艺的定位件。如图7、图12所示,定位件贴附工作站94设置滚压装置63,其可为包覆有软质橡胶的滚轮。定位件贴附作业时,是在研磨盘61定位后,先将定位件70的定位环71设置于研磨盘61上,再借由滚压装置63以滚压方式将大面积定位胶带73滚压于定位环71及晶圆50背面,使得定位胶带73同时贴附于定位环71及晶圆50背面,再适当裁剪定位胶带73,以构成黏贴于晶圆50研磨后背面521的定位件70。As shown in FIG. 11 and FIG. 12 , the grinding
步骤五step five
卸下晶圆unload wafer
如图8、图11、图12所示,研磨盘61旋动至卸下工作站95;较佳地卸下工作站95与装载工作站91整合为同一工作站,即先释除研磨盘61的吸附力,使得已完成研磨的晶圆50可脱离研磨盘61,晶圆50在无吸附力时通常会稍许翘曲,由定位件70移动晶圆50,即以卸下工作站95的卸下臂912或其它装置固定定位环71,而无须接触晶圆50研磨后的背面521,便可将晶圆50由晶圆背面研磨设备90卸下(unloading),以供后续步骤。As shown in Figure 8, Figure 11 and Figure 12, the grinding
步骤六step six
去除胶带remove tape
如图9所示,以定位件70作为晶圆50的载具将取出的晶圆50搬移至胶带去除载台81,以去除保护胶带53。As shown in FIG. 9 , the taken-out
步骤七step seven
切割晶圆Dicing wafer
如图10所示,以定位件70作为晶圆50的载具将晶圆50搬运至晶圆切割设备,定位件70的定位胶带73是贴置于晶圆切割设备的切割台82,以切割工具83将晶圆50切割为多个晶片54。As shown in FIG. 10 , the
因此,依据本发明,在晶圆背研磨设备中,晶圆50是被吸附于研磨盘61上以同一研磨盘61进行装载晶圆、研磨晶圆、定位件贴附、卸下晶圆等步骤,在研磨后,晶圆50是贴附于定位件70的定位胶带73上,在卸下晶圆步骤及后续步骤的搬运动作中,可利用定位件作70为晶圆50的载具,而不需要接触晶圆50研磨后的背面521,定位件70适用于晶圆背面研磨设备及晶圆切割设备,定位件70的定位胶带73是贴置于晶圆切割设备的切割台82,以切割工具83将晶圆50切割为多个晶片54,因此,本发明具有工艺整合、减少搬运动作及防止研磨后晶圆翘而产生碎裂的功效,特别适用于大尺寸晶圆的超薄研磨。Therefore, according to the present invention, in the wafer back grinding equipment, the
Claims (10)
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| CN101367192B (en) * | 2007-08-17 | 2011-05-11 | 中芯国际集成电路制造(上海)有限公司 | Wafer reverse side grinding method |
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| CN108500826A (en) * | 2017-02-27 | 2018-09-07 | 东莞新科技术研究开发有限公司 | Wafer reverse side grinding method |
| CN110039382A (en) * | 2018-10-16 | 2019-07-23 | 天通控股股份有限公司 | A kind of thining method of large-size ultra-thin lithium tantalate wafer |
| CN109560034A (en) * | 2018-11-05 | 2019-04-02 | 紫光宏茂微电子(上海)有限公司 | The technique of chip attachment |
| CN110270891B (en) * | 2019-07-17 | 2020-06-19 | 浙江台佳电子信息科技有限公司 | Wafer-level glass substrate production process for VR projection display |
| CN113649859A (en) * | 2021-08-17 | 2021-11-16 | 顺芯科技有限公司 | Method for accelerating metabolism of wafer grinding waste |
| CN114823467B (en) * | 2022-03-31 | 2025-01-07 | 浙江同芯祺科技有限公司 | Application of a flat carrier in wafer loading |
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| JP2000117624A (en) * | 1998-10-09 | 2000-04-25 | Speedfam-Ipec Co Ltd | Backing sheet and grinding device using the sheet |
| EP1263026A2 (en) * | 2001-05-21 | 2002-12-04 | Tokyo Seimitsu Co.,Ltd. | Wafer planarization apparatus |
| JP2003147300A (en) * | 2001-11-12 | 2003-05-21 | Lintec Corp | Surface protection sheet and method for manufacturing semiconductor chip during wafer back grinding |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2000117624A (en) * | 1998-10-09 | 2000-04-25 | Speedfam-Ipec Co Ltd | Backing sheet and grinding device using the sheet |
| EP1263026A2 (en) * | 2001-05-21 | 2002-12-04 | Tokyo Seimitsu Co.,Ltd. | Wafer planarization apparatus |
| JP2003147300A (en) * | 2001-11-12 | 2003-05-21 | Lintec Corp | Surface protection sheet and method for manufacturing semiconductor chip during wafer back grinding |
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| CN101367192B (en) * | 2007-08-17 | 2011-05-11 | 中芯国际集成电路制造(上海)有限公司 | Wafer reverse side grinding method |
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