CN1352703A - 具有含铜表面的电子元器件的湿法处理方法 - Google Patents

具有含铜表面的电子元器件的湿法处理方法 Download PDF

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Publication number
CN1352703A
CN1352703A CN00807855A CN00807855A CN1352703A CN 1352703 A CN1352703 A CN 1352703A CN 00807855 A CN00807855 A CN 00807855A CN 00807855 A CN00807855 A CN 00807855A CN 1352703 A CN1352703 A CN 1352703A
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CN
China
Prior art keywords
copper
solution
electronic devices
components
electronic components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN00807855A
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English (en)
Chinese (zh)
Inventor
史蒂文·维尔哈维尔贝克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CFMT Inc
Original Assignee
CFMT Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CFMT Inc filed Critical CFMT Inc
Publication of CN1352703A publication Critical patent/CN1352703A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
CN00807855A 1999-05-21 2000-05-19 具有含铜表面的电子元器件的湿法处理方法 Pending CN1352703A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13526799P 1999-05-21 1999-05-21
US60/135,267 1999-05-21

Publications (1)

Publication Number Publication Date
CN1352703A true CN1352703A (zh) 2002-06-05

Family

ID=22467309

Family Applications (1)

Application Number Title Priority Date Filing Date
CN00807855A Pending CN1352703A (zh) 1999-05-21 2000-05-19 具有含铜表面的电子元器件的湿法处理方法

Country Status (7)

Country Link
EP (1) EP1198620A4 (fr)
JP (1) JP2003500537A (fr)
KR (1) KR20020030742A (fr)
CN (1) CN1352703A (fr)
AU (1) AU5152200A (fr)
TW (1) TW466728B (fr)
WO (1) WO2000071782A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105802747A (zh) * 2016-04-15 2016-07-27 林淑录 一种太阳能光伏电池硅片制绒后清洗用的清洗剂
CN115558931A (zh) * 2022-10-26 2023-01-03 广东华智芯电子科技有限公司 铜表面晶花的细化方法、腐蚀液组合及其应用

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020072595A (ko) * 2001-03-12 2002-09-18 (주)에스티디 동판의 산화막 형성방법 및 이에 의해 제조된 동판
KR20080072905A (ko) * 2005-11-09 2008-08-07 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 표면에 저유전 물질이 있는 반도체 웨이퍼를 재생하기 위한조성물 및 방법
JP4973231B2 (ja) * 2006-09-05 2012-07-11 日立化成工業株式会社 銅のエッチング処理方法およびこの方法を用いてなる配線基板と半導体パッケージ
US10982335B2 (en) * 2018-11-15 2021-04-20 Tokyo Electron Limited Wet atomic layer etching using self-limiting and solubility-limited reactions

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526853B2 (fr) * 1972-12-22 1977-02-25
US4586961A (en) * 1985-02-15 1986-05-06 Halliburton Company Methods and compositions for removing copper and copper oxides from surfaces
JP2909743B2 (ja) * 1989-03-08 1999-06-23 富山日本電気株式会社 銅または銅合金の化学研磨方法
JP3154814B2 (ja) * 1991-06-28 2001-04-09 株式会社東芝 半導体ウエハの洗浄方法および洗浄装置
JPH06318584A (ja) * 1993-05-10 1994-11-15 Kawasaki Steel Corp Ｃｕ配線が形成されたウエハの洗浄方法及び洗浄後の乾燥方法
JP3338134B2 (ja) * 1993-08-02 2002-10-28 株式会社東芝 半導体ウエハ処理方法
JP3226144B2 (ja) * 1994-07-01 2001-11-05 三菱マテリアルシリコン株式会社 シリコンウェーハの洗浄方法
US5855805A (en) * 1996-08-08 1999-01-05 Fmc Corporation Microetching and cleaning of printed wiring boards
KR100234541B1 (ko) * 1997-03-07 1999-12-15 윤종용 반도체장치 제조용 웨이퍼의 세정을 위한 세정조성물 및 그를 이용한 세정방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105802747A (zh) * 2016-04-15 2016-07-27 林淑录 一种太阳能光伏电池硅片制绒后清洗用的清洗剂
CN105802747B (zh) * 2016-04-15 2018-11-09 林淑录 一种太阳能光伏电池硅片制绒后清洗用的清洗剂
CN115558931A (zh) * 2022-10-26 2023-01-03 广东华智芯电子科技有限公司 铜表面晶花的细化方法、腐蚀液组合及其应用

Also Published As

Publication number Publication date
JP2003500537A (ja) 2003-01-07
WO2000071782A1 (fr) 2000-11-30
EP1198620A4 (fr) 2004-12-22
KR20020030742A (ko) 2002-04-25
AU5152200A (en) 2000-12-12
TW466728B (en) 2001-12-01
EP1198620A1 (fr) 2002-04-24

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